JPH083739A - Sputtering device - Google Patents

Abstract

PURPOSE:To provide a sputtering device excellent in coatability to a body to be coated and ensuring a high rate of deposition. CONSTITUTION:This sputtering device has plural steps of collimators 12 arranged at certain intervals. In the case of two steps of collimators 12a, 12b, this device has a position regulating mechanism 32 for shifting and disposing the 2nd step collimator 12b relatively to the 1st step collimator 12a.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to a sputtering apparatus having a collimator provided between a target and a film formation target.

[0002]

2. Description of the Related Art An example of a sputtering apparatus using a conventional collimator is shown in FIG. A conventional sputtering apparatus will be briefly described with reference to FIG.

In this sputtering apparatus, a collimator 42 is arranged between a target 40 and a film-forming object (for example, a wafer) 44, and the inside of the collimator 42 is penetrated by a slit.

Further, FIG. 8B is an explanatory view for explaining the structure of the collimator 42. According to this, the conventional collimator structure has a honeycomb shape. By using this collimator 42, for example, metal atoms or molecules knocked out from the target 40 by collision of argon (Ar) ions pass through the collimator 42 and are deposited on the film formation target 44. In this way, a deposited, eg metal layer is formed. At this time, if the opening angle at which the metal atoms or molecules of the target 40 are scattered is set to, for example, 20 degrees, the collimator 4
The incident angle of metal atoms or molecules that pass through 2 and are scattered on the film-forming target 44 is narrowed to within about 10 degrees. In this way, by using the collimator 42, the film formation target 44
Includes a portion 46 on which metal atoms or molecules are deposited,
A portion 48 which is a shadow of the collimator 42 and where metal atoms or molecules are not deposited is generated. In addition, here, a portion 48 which is shaded by the collimator 42 is shown by diagonal lines. By using the collimator 42 in this way,
Since the incident angle of metal atoms or molecules reaching the film formation target 44 can be narrowed down, even if the upper surface of the film formation target 44 is an uneven surface, it is deposited almost uniformly on this uneven surface. Coverability is improved (see FIG. 7A).

[0005]

However, the sputtering apparatus using the above-mentioned conventional collimator has the following problems.

The width of the collimator is usually 20 mm to 30 m
Since it is as large as m, the vapor-deposited metal film deposited inside the slit peels off. Then, the peeled vapor-deposited metal film causes a film defect of the metal layer attached to the film formation target.

When the incident angle is adjusted using a collimator, conventionally, the film forming chamber of the sputtering apparatus is opened and the collimator is aligned in the atmosphere. For this reason,
Dust may be mixed into the film forming chamber of the sputtering apparatus or oxide may be formed on the film forming object, which may cause deterioration of the metal layer.

Further, when the film-formation object has large irregularities on the top surface, the use of a collimator improves the coverage, but on the other hand, a metal which scatters far away from the film-formation object at a vertical angle. Since the incident angle of atoms (or molecules) is narrowed by the collimator, the deposition rate (here, the deposition rate refers to the film thickness / time) is reduced. Therefore, the productivity of the metal layer formed on the film forming object is reduced by the amount of the decrease in the deposition rate for forming the film forming object. However, in the case where the top and bottom of the film-forming object have small irregularities, the accuracy of the covering property is not required more than necessary, so there is a demand for increasing the deposition rate. At this time, the conventional collimator has a problem that the incident angle cannot be arbitrarily adjusted.

Therefore, there has been a demand for a sputtering apparatus in which the deposited metal film has good adhesion to the collimator, has few film formation defects in the metal layer formed on the object, and has a high deposition rate.

[0010]

Therefore, in the sputtering apparatus of the present invention, the collimators are separated from each other and are composed of a plurality of collimator stages. Then, the total width of the respective collimator stages is set to be substantially the same as the width of one conventional collimator.

Further, in the apparatus of the present invention, it is preferable that the first collimator stage and the second collimator stage constitute a collimator. At this time, a position adjusting mechanism is provided for moving and arranging one collimator stage (for example, a second collimator stage) provided on the target side relative to the other collimator stage. When moving the second collimator stage, for example, the first collimator stage is fixed, and the second collimator stage is moved vertically or horizontally from the target side to the deposition target side by the position adjusting mechanism. Move and place. At this time, the position feed amount is controlled by the position adjusting mechanism.

The position adjusting mechanism may be provided inside or outside the film forming chamber. However, in any case, it is preferable that the film forming chamber wall and the position adjusting mechanism are hermetically sealed. When the top surface unevenness of the film formation target is large (here, the top surface unevenness of the film formation target is large means that the height of the peaks of the projections and depressions is approximately twice or more the distance between the peaks. .) Moves, for example, the second collimator stage toward the target side, that is, in the up-and-down direction to separate the first and second collimator stages by a predetermined distance. In this case, the distance is such a distance that the vapor-deposited metal films attached to the respective collimator stages are not connected to each other when sputtering is performed.

When the unevenness on the upper surface of the film-forming target is small (here, the small unevenness on the upper surface of the film-forming target means that the height of the peaks of the unevenness is substantially equal to the interval between the peaks. ) Moves the second collimator stage in the vertical direction. At this time,
The distance between the first and second collimator stages is preferably wider than when the unevenness on the upper surface of the film-forming target is large. Alternatively, the second collimator stage may be moved in the left-right direction so as to be displaced between the first and second collimator stages.

[0014]

In the sputtering apparatus of the present invention described above, the collimator is composed of a plurality of collimator stages which are separated from each other. Therefore, compared to conventional collimators with an integrated structure,
The width of each collimator stage in the direction connecting the target and the film-forming target is as short as about 1/2, and when metal atoms or molecules adhere to the first and second collimator stages, each collimator stage is The deposition area of the vapor-deposited metal film adhered to is small. For this reason, the stress of the vapor-deposited metal film attached to the first and second collimator stages is relaxed, so that the vapor-deposited metal film attached to the first and second collimator stages is prevented from peeling off.

At least one collimator stage (for example, the second collimator stage) of the plurality of collimator stages.
Is provided with respect to the other collimator stage relative to each other. The position adjusting mechanism is hermetically sealed with the film forming chamber of the sputtering apparatus. Therefore, by connecting the position adjusting mechanism and the second collimator stage, the position of the second collimator stage can be moved in the up-down direction or the left-right direction without setting the atmospheric pressure in the film forming chamber. As described above, since the movement of the second collimator stage can be performed in a vacuum, dust and oxides in the atmosphere are not mixed in the film forming chamber, and thus the impurities are reduced, so that the film quality of the metal layer is reduced. Is improved.

If the film-forming target has large irregularities,
For example, when the first and second collimator stages are used, the distance between the respective collimator stages is set so as to be so narrow as to prevent the vapor-deposited metal film attached to the first and second collimator stages from being connected. Therefore, in this case, since the incident angles of the metal atoms or molecules generated from the target are narrowed down by the first and second collimator stages, a metal layer having good coverage is formed on the upper surface of the film formation target. .

When the film-forming target has small irregularities, for example, when using the first and second collimator stages, the second collimator stage is moved in parallel to the target side, or the second collimator stage is moved in the left-right direction. Let it move. At this time, since the incident angle becomes large, the covering property of the film formation target is somewhat deteriorated, but the deposition rate becomes large.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The sputtering apparatus of the present invention will be described below with reference to the drawings. It should be noted that FIGS. 1 to 6 only schematically show the shapes, sizes, and arrangements of the respective constituent components to the extent that the present invention can be understood.

FIG. 1 and FIG. 2 are schematic views of the essential parts of a sputtering apparatus according to the present invention. It should be noted that part of the hatching in the section showing the cross-sectional view is omitted for clarity of the drawing.

The sputtering apparatus of the present invention has a position adjusting mechanism 32 for moving the film forming chamber 16 and the collimator stage 12.
It is equipped with In this embodiment, the position adjusting mechanism 32 is preferably a rotary feed mechanism.

The rotary feed mechanism 32 will be described in the case where its constituent parts are provided outside the film forming chamber 16, but the rotary feed mechanism 32 may be provided inside the film forming chamber 16 as a whole. . Further, in the embodiment of the present invention, the case where the number of the collimator stages 12 is two will be described, but the configuration may be two or more stages. In case of 2 stages, collimator stage 12
The first collimator stage 12a and the second collimator stage 12b
It consists of and.

The film forming chamber 16 is provided with a target 10, a film-forming target 14 having irregularities, a first collimator stage 12a and a second collimator stage 12b. The first and second collimator stages 12 a and 12 b are arranged between the target 10 and the film formation target 14. Further, one of the first and second collimator stages 12a and 12b, for example, the second collimator stage 12b, is the target 1
A direction parallel to the direction from the 0 side to the film formation target 14 side (referred to as a vertical direction indicated by an arrow b in the drawing) or a direction orthogonal to the vertical direction (referred to as a horizontal direction indicated by an arrow a in the drawing). It is connected to a rotary feed mechanism 32 that can be moved to.

On the other hand, the rotary feed mechanism 32 includes a motor 18
A rotary plate 22 connected to the motor shaft 20 and a rotor 28 are provided. The rotating plate 22 has a magnet (permanent magnet) 24, and the rotor 28 has a magnet 26. And the rotary feed mechanism 3
2, the storage box 23 of the rotary plate 22 is placed in the film forming chamber 16
Is hermetically attached to a wall 30 of the rotor 28, and the rotor 28 is formed with a thread groove. By the rotation of the shaft of the rotor 28, the collimator stages 12a and 12b provided in the film forming chamber 16 can be selectively moved in the left-right direction via the moving member 29.

FIG. 2 is an explanatory diagram for explaining a drive mechanism for driving the second collimator stage in the vertical direction.

The same rotary feed mechanism 32 as in FIG.
By individually preparing and rotating the shaft of the rotor 28, the moving member 29 is moved, and the collimator stages 12a and 12b provided in the film forming chamber 16 can be selectively moved in the vertical direction. .

FIGS. 3A and 3B are a plan view and a front view for explaining the first and second collimator stage structures of the present invention.

First and second collimator stages 12a, 12b
Is provided between the target 10 and the film formation target 14, and has a cylindrical shape when viewed from the front. The inside of the first and second collimator stages 12a and 12b has a honeycomb shape. However, a hole shape (not shown) may be used.

Also, the first and second collimator stages 12a,
The slit portion 9 penetrates 12b. Therefore, when forming a film on the film-forming target 14, the target 10
Metal atoms or molecules scattered from the slit 9
The metal layer 34 is formed by scattering through the film forming object 14 (see FIG. 7). At this time, the diameter L of the first and second collimator stages 12a and 12b is set to, for example, 300 mm,
The width T is, for example, 15 mm.

Also, the first and second collimator stages 12a,
By controlling the rotary feed mechanism 32, the interval M of 12b rotates the rotor 28, and the rotation of the rotor 28 moves the moving member 29 to move the second collimator 12b in the vertical direction.

Next, the arrangement of the first and second collimator stages of the present invention will be described with reference to FIGS.
However, the hatched lines in each of FIGS. 4 to 6 do not represent the cross section but are added to clarify the description of the drawings.

[First Embodiment] FIG. 4 is a cross-sectional view of a film formation chamber for explaining the first embodiment of the present invention when viewed from the side.

In the first embodiment, it is assumed that the top surface irregularities of the film-forming target 14 are large, that is, the height H of the top surface irregularities is at least twice the width N of the valleys between the peaks. (See FIG. 7).

In the first embodiment, first and second collimator stages 12a and 12b are provided between the target 10 which is the vapor deposition source and the film-forming target 14 which is the object to be deposited.
Here, the first collimator stage 12a is generically referred to as the collimator 12. Then, the width T of the first and second collimator stages 12a and 12b is set to about ½ of the conventional width, that is, about 10 mm to 15 mm.

Also, the first and second collimator stages 12a,
The spacing H ₁ of 12b is equal to that of each collimator stage 12a,
It is assumed that the vapor-deposited metal films attached to 12b are not connected continuously. Here, for example, the distance H ₁ between the first and second collimator stages 12a and 12b is set to ₁ mm to 2
It is about mm.

Next, the film forming method of the first embodiment will be described with reference to FIGS. 4 and 7A.

In the sputtering apparatus of the present invention, a power source (not shown) of the sputtering apparatus is applied to generate argon (Ar) ions by glow discharge in vacuum, and the ions generated at this time collide with the target 10. . At this time, the metal atoms and molecules hit by the argon ions are scattered at a predetermined opening angle. The opening angle at this time is, for example, 20 degrees. At this time, the first and second collimator stages 1
Since 2a and 12b are provided, the incident angle of metal atoms or molecules that pass through the slit portion 9 and enter the film formation target 14 is narrowed to about 10 degrees. At this time, the scattered metal atoms or molecules are deposited on the film-forming target 14 to form the metal layer 3
4 is formed.

Further, on the upper surface of the film-forming target 14, a portion 11 where metal atoms or molecules are incident and a portion 13 which is shaded by the first and second collimator steps 12a and 12b are formed. In FIG. 4, only one incident angle of the metal atoms or molecules scattered from the target 10 is described, but in reality, the metal atoms or molecules are scattered from all the points of the target 10, so that the shadow A film is also formed on the portion 13. Since the incident angle of the metal layer 34 thus deposited on the uneven surface of the film-forming target 14 is narrowed down by the first and second collimator stages 12a and 12b, the metal layer 34 having good coverage can be formed.

Further, in the first embodiment, the distance H ₁ between the first and second collimator stages 12a and 12b is arranged separately. At this time, the first and second collimator stages 12
An extremely thin vapor-deposited metal film (not shown) to which metal atoms or molecules are separately attached is formed in the slit portions 9 of a and 12b. However, the first and second collimator stages 12
Since the widths T of the a and 12b are about 1/2 of the conventional one, the occupied area is almost half that of the conventional one. Therefore, the total stress of the vapor-deposited metal film attached to the collimator stage 12 decreases as the occupied area becomes smaller, so that peeling of the vapor-deposited metal film is suppressed. Also, the first and second collimator stages 12
Since the distance H ₁ between a and 12b can be adjusted in vacuum, it is possible to avoid mixing of dust and oxides in the atmosphere.
Therefore, the metal layer 34 formed on the unevenness of the upper surface of the film formation target 14 has a high film quality.

Next, the second and third embodiments of the present invention will be described with reference to FIGS. The second and third embodiments are examples applied to the case where the top surface irregularity of the film formation target 14 is small.

[Second Embodiment] FIG. 5 is a cross-sectional view of a film forming chamber for explaining a second embodiment of the present invention when viewed from the side.

In the second embodiment, one of the first and second collimator stages 12a and 12b (for example, the second collimator stage 12b) is translated to the target 10 side. At this time, the first and second collimator stages 1
The distance L ₂ between 2a and 12b is made larger than that in the first embodiment. At this time, the second collimator stage 12b is moved by the rotary feed mechanism 32.

Since the shapes of the first and second collimator stages 12a and 12b of the second embodiment are the same as those of the first embodiment, detailed description will be omitted.

Next, the film forming method of the second embodiment will be described.

In the second embodiment, the opening angle of metal atoms or molecules scattered from the target 10 is, for example, 20 degrees. At this time, the first and second collimator stages 12a, 1
The incident portions of metal atoms or molecules incident on the film-forming target 14 via 2b are 15 and 19. That is, when the incident angle is 10 degrees, the incident angle passing through the interval L ₂ between the film forming portion 15 and the first collimator stage 12a is from 15 degrees to 20 degrees.
It becomes a portion 19 where metal atoms or molecules are scattered over time. Therefore, the shadow portion 17 generated by the first and second collimator stages 12a and 12b is smaller than that in the first embodiment. Therefore, the deposition rate of the metal layer formed on the entire upper surface of the film-forming target 14 is as much as the incident angle is wide,
Since it becomes large, the productivity of the film-forming target 14 itself can be improved.

[Third Embodiment] Next, a third embodiment of the present invention will be described with reference to FIG.

In the third embodiment, the second collimator stage 12b
This is an example of moving the left and right. Here, so that about half of the distance L ₃ between the top and bottom of the slit portion 9 to move the second collimator stage 12b. At this time,
The opening angle of metal atoms or molecules scattered from the target 10 is, for example, 20 degrees. At this time, the film-forming target 14
The incident angle of incident light is about 14 degrees. Therefore, the incident angle is widened by 4 degrees as compared with the first embodiment, and the deposition rate is increased accordingly. In the third embodiment, when the incident angle is 14 degrees, the first collimator stage 12a is arranged within the incident angle, but the plate thickness of the first collimator stage 12a is set substantially perpendicular to the incident angle. Since it is provided, it is hardly affected by the film formation on the film formation target.

In the second and third embodiments, the width T of the first and second collimator stages is about 1/2 of the conventional width as in the first embodiment. The area occupied by the vapor-deposited metal film attached to the collimator stages 12a and 12b is also reduced to about 1/2. Therefore, the total stress of the deposited metal film deposited on the first and second collimator stages 12a and 12b is reduced, and the peeling of the deposited metal film deposited on the respective collimator stage 12 is reduced. Therefore, the collimator stage 1
The defects of the metal layer of the film-forming target 14 caused by the peeling of No. 2 can also be reduced.

Also, the first and second collimator stages 12a,
The operation of moving one of the collimator stages 12b of 12b in the up-down direction or the left-right direction can be performed in a vacuum, so that mixing of impurities such as dust and oxide in the atmosphere can be suppressed. For this reason, the film quality of the metal layer formed on the upper and lower surfaces of the film-forming target 14 is excellent without defects.

Further, the first and second collimator stages 12a,
By optimally changing the interval between 12b, it is possible to set the optimum conditions of the coverage and deposition rate for the film-forming target 14. Further, it is known that the coating property and the deposition rate for the film-forming target 14 do not depend on the slit pattern of the collimator stage.

FIGS. 7A and 7B are sectional views for explaining the state of coverage with and without the collimator.

The film-forming target 14 has a structure having irregularities. The height of the mountain is H, and the groove width between the mountains is N. In this first embodiment, the height H of the ridge is about 2 times the groove width N.
It is supposed to be more than doubled. Such a film-forming target 14
In the case of using, the shape of the deposited metal layer becomes the structure shown in FIG. 7B if the collimator is not provided. As can be understood from FIG. 7B, the metal layer 34 deposited on the film formation target 14 has a non-uniform thickness.

FIG. 7A shows a film formation state when the collimator stage 12 is provided. As can be understood from this figure, by providing the collimator stage 12, the film thickness of the metal layer 34 deposited on the film formation target 14 becomes uniform. Here, the state in which the film thickness is formed uniformly is referred to as the state in which the coverage is good.

The first, second and third embodiments described above are
Although the opening angle of the metal atoms or molecules scattered from the target 10 has been described as 20 degrees, the opening angle is not limited to this angle at all, and the sputtering condition is arbitrarily set to set the opening angle to the optimum condition. You can change it. At this time, the collimator stage 12 for the film-forming target 14
Needless to say, the incident angle of is also changed.

[0054]

As is apparent from the above description, the sputtering apparatus of the present invention is composed of a plurality of collimator stages in which the collimators are separated from each other. The plurality of collimator stages are about 1/2 or less than the width of the conventional collimator. Therefore, compared with the conventional one, the width of the first and second collimator stages becomes narrower, so that the occupied area of the deposited metal film attached to the slit portion of the collimator stage becomes smaller, and the total stress of the deposited metal film is It will be reduced. Therefore, peeling of the deposited metal film attached to the first and second collimator stages is reduced.

Of the first and second collimator stages,
For example, it is provided with a position adjusting mechanism for relatively moving the second collimator stage. Therefore, it is not necessary to open the film forming chamber and adjust the position of the collimator as in the conventional case, and the collimator stage can be moved in a vacuum state. Therefore, the amount of impurities such as dust and oxides in the atmosphere is not mixed into the inside of the film formation chamber, so that the quality of the metal film formed on the film formation target is significantly improved.

In addition, when the unevenness of the upper surface of the film-forming target is small, one of the first and second collimator stages is moved in the vertical direction or one collimator stage is moved in the horizontal direction to form the film. The incident angle with respect to the film body can be increased. For this reason, the deposition rate on the film-forming target increases, so that the productivity of the film-forming target improves.

Further, in the embodiment of the present invention, since the rotary feed mechanism is used as the position adjusting mechanism, the position of the collimator stage can be easily adjusted.

[Brief description of drawings]

FIG. 1 is a main part configuration diagram provided for explaining an overall configuration of a sputtering apparatus of the present invention.

FIG. 2 is an explanatory diagram for explaining a driving method of a collimator stage of the present invention.

3A and 3B are a plan view and a front view of a collimator stage used for explaining the structure of the collimator stage of the present invention.

FIG. 4 is a cross-sectional view seen from a side surface of a film forming chamber used for explaining a first embodiment of the present invention.

FIG. 5 is a cross-sectional view seen from a side of a film forming chamber used for explaining a second embodiment of the present invention.

FIG. 6 is a cross-sectional view seen from a side of a film forming chamber used for explaining a third embodiment of the present invention.

FIG. 7A is a cross-sectional view provided for explaining a metal layer formed on the film-forming target according to the present invention. Also,
(B) is a sectional view provided for explaining a metal layer when a collimator stage is not used.

8A and 8B are a cross-sectional view and a front view used for explaining a collimator when viewed from a side surface of a conventional film forming chamber.

[Explanation of symbols]

 10: Target 12: Collimator 12a: First collimator stage 12b: Second collimator stage 14: Film-forming target 16: Film-forming chamber 18: Motor 20: Shaft 22: Rotating plate 23: Storage box 24, 26: Permanent magnet 28 : Rotor 29: Moving member 30: Wall of film forming chamber 32: Rotary feed mechanism

Claims (4)

[Claims] 1. A sputtering apparatus of the type including a collimator between a target and a film-forming target, wherein the collimator is composed of a plurality of collimator stages that are separated from each other. 2. The sputtering apparatus according to claim 1, wherein the collimator is a first collimator stage and a second collimator stage. 3. The sputtering apparatus according to claim 1, further comprising a position adjusting mechanism for moving and arranging at least one collimator stage of the plurality of collimators in a vacuum state relative to each other. Characteristic sputtering equipment. 4. The sputtering apparatus according to claim 3, wherein the position adjusting mechanism is a rotary feed mechanism.