JPH0837140A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0837140A JPH0837140A JP6170890A JP17089094A JPH0837140A JP H0837140 A JPH0837140 A JP H0837140A JP 6170890 A JP6170890 A JP 6170890A JP 17089094 A JP17089094 A JP 17089094A JP H0837140 A JPH0837140 A JP H0837140A
- Authority
- JP
- Japan
- Prior art keywords
- light
- antireflection film
- semiconductor device
- manufacturing
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- ing And Chemical Polishing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造方法
に関する。特に、半導体基板上にフォトレジストを形成
して露光・現像を行ってレジストパターンを得る工程を
備える半導体装置の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device. In particular, the present invention relates to a method for manufacturing a semiconductor device including a step of forming a photoresist on a semiconductor substrate, exposing and developing the photoresist to obtain a resist pattern.
【０００２】[0002]
【従来の技術及びその問題点】半導体装置製造の分野で
のフォトリソグラフィ技術の研究開発においては、現
在、解像度の良好な短波長光、例えば代表的にはＫｒＦ
エキシマレーザー光による露光方法が主流に研究開発が
なされている。2. Description of the Related Art In research and development of photolithography technology in the field of semiconductor device manufacturing, at present, short wavelength light with good resolution, for example, KrF is representative.
Research and development have been conducted mainly on the exposure method using excimer laser light.
【０００３】しかし、このような場合、波長の狭帯域化
により定在波の問題が大きくなりつつある。このため、
反射防止技術は、重要となっている。However, in such a case, the problem of standing waves is increasing due to the narrowing of the wavelength band. For this reason,
Antireflection technology has become important.
【０００４】いくつかある反射防止膜（Ａｎｔｉ Ｒｅ
ｆｌｅｃｔｉｖｅ Ｌａｙｅｒ、以下ＡＲＬと略記する
こともある。）のタイプで、フォトレジストの下部側に
有機反射防止膜が配置される有機ボトムレイヤー方式
は、膜質が安定しており、確実に反射防止効果が期待で
きることで優れている。There are several anti-reflection coatings (Anti Re
It may also be abbreviated as "flective Layer", hereinafter ARL. The organic bottom layer method of the type (1), in which an organic antireflection film is disposed on the lower side of the photoresist, is excellent in that the film quality is stable and the antireflection effect can be reliably expected.
【０００５】従来のプロセスを図３に示す。図３（ａ）
に示すように、ベアＳｉ等の半導体基板１上に塗布ノズ
ル４から反射防止膜溶剤を吐出してスピンコートする。
膜厚は例えば１３０ｎｍとする。塗布されたＡＲＬ膜を
符号２で示す。ホットプレート上でベーキングを行う
（図３（ｂ））。例えば２５０℃で６０秒のベーキング
を行う。次に図３（ｃ）の如く、レジストを塗布し、露
光現像してレジストパターン３を得る。露光後ベーク
（ＰＥＢ）は、例えば９５℃で６０秒間行う。例えば現
像液はＮＭＤ−Ｗ（２．３８％）を用い、パドル現像す
る。A conventional process is shown in FIG. FIG. 3 (a)
As shown in FIG. 5, the antireflection film solvent is discharged from the coating nozzle 4 onto the semiconductor substrate 1 made of bare Si or the like for spin coating.
The film thickness is, for example, 130 nm. The coated ARL film is indicated by reference numeral 2. Baking is performed on a hot plate (FIG. 3 (b)). For example, baking is performed at 250 ° C. for 60 seconds. Next, as shown in FIG. 3C, a resist is applied and exposed and developed to obtain a resist pattern 3. The post-exposure bake (PEB) is performed at 95 ° C. for 60 seconds, for example. For example, NMD-W (2.38%) is used as the developing solution, and paddle development is performed.
【０００６】上記工程で、安定な膜質の反射防止膜２が
得られる。ところが逆に、膜質が安定である点が欠点と
なり、完全に定在波を打ち消すような商品は存在してい
ない。このため、例えばより微細なパターンを作るとき
には、ある程度のマージンをプロセス上において調整で
きる方が望ましいということになる。つまり、光学定数
が若干調整できるような材料がよい。Through the above steps, the antireflection film 2 having a stable film quality can be obtained. On the other hand, on the contrary, there is no product that completely cancels the standing wave because the film quality is stable. Therefore, for example, when making a finer pattern, it is desirable that a certain degree of margin can be adjusted in the process. That is, a material whose optical constant can be adjusted a little is preferable.
【０００７】従来での技術では、ベーキング温度をパラ
メータとしてのみ光学定数の調整が可能であるが、これ
は不十分なマージンである。In the conventional technique, the optical constant can be adjusted only by using the baking temperature as a parameter, but this is an insufficient margin.
【０００８】[0008]
【発明の目的】本発明は上記問題点を解決して、有機反
射防止膜の光学定数の微調整がプロセス上で可能で、か
つこれを工程数を増やすことなく、簡便な工程で実現で
きるようにした半導体装置の製造方法を提供することを
目的としている。DISCLOSURE OF THE INVENTION The present invention solves the above problems and enables fine adjustment of the optical constants of an organic antireflection film in a process, and can realize this in a simple process without increasing the number of processes. It is an object of the present invention to provide a method for manufacturing a semiconductor device as described above.
【０００９】[0009]
【目的を達成するための手段】本出願の請求項１の発明
は、半導体基板上にフォトレジストを形成して露光・現
像を行ってレジストパターンを得る工程を備える半導体
装置の製造方法において、少なくとも露光光を照射すべ
き部分に有機系の反射防止膜溶剤を塗布し、これを加熱
して有機系の反射防止膜を得る際に、ＵＶ光を照射する
ことにより、得られる反射防止膜の光学特性を調整する
ことを特徴とする半導体装置の製造方法であって、これ
により上記目的を達成するものである。The invention according to claim 1 of the present application provides at least a method for manufacturing a semiconductor device, which comprises a step of forming a photoresist on a semiconductor substrate, exposing and developing the photoresist to obtain a resist pattern. When an organic antireflection film solvent is applied to a portion to be irradiated with exposure light and heated to obtain an organic antireflection film, the optical property of the antireflection film obtained by irradiating UV light is obtained. A method of manufacturing a semiconductor device, which is characterized in that characteristics are adjusted, thereby achieving the above object.
【００１０】本出願の請求項２の発明は、前記有機系の
反射防止膜には吸収染料を添加するとともに、該吸収染
料の添加量を、前記ＵＶ光の照射量に応じて調整するこ
とを特徴とする請求項１に記載の半導体装置の製造方法
であって、これにより上記目的を達成するものである。
例えば、下地が高反射の場合ＵＶ光の照射量を小さく
し、下地が低反射の場合ＵＶ光の照射量を大きくするよ
うにして、ＡＲＬに幅をもたせるため、吸収染料を多め
に添加しておく構成にすることができる。According to the second aspect of the present invention, an absorbing dye is added to the organic antireflection film, and the addition amount of the absorbing dye is adjusted according to the irradiation amount of the UV light. The method of manufacturing a semiconductor device according to claim 1, wherein the above object is achieved.
For example, if the base is highly reflective, the UV light irradiation amount is reduced, and if the base is low reflective, the UV light irradiation amount is increased. It can be configured to leave.
【００１１】本出願の請求項３の発明は、ＵＶ光の照射
を、加熱によるベーキング工程において行うことを特徴
とする請求項１または２に記載の半導体装置の製造方法
であって、これにより上記目的を達成するものである。The invention according to claim 3 of the present application is the method for manufacturing a semiconductor device according to claim 1 or 2, characterized in that the irradiation of UV light is performed in a baking step by heating. It achieves the purpose.
【００１２】本出願の請求項４の発明は、ＵＶ光の照射
により、反射防止膜の表面層にレジストとの不相溶層を
形成することを特徴とする請求項１ないし３のいずれか
に記載の半導体装置の製造方法であって、これにより上
記目的を達成するものである。The invention according to claim 4 of the present application is characterized in that a layer incompatible with a resist is formed on the surface layer of the antireflection film by irradiation with UV light. The method for manufacturing a semiconductor device described above achieves the above object.
【００１３】本発明において、有機反射防止膜形成材料
としては、高分子としてポリスルホン酸系の重合体を用
い、染料としてアゾ系、または非アゾ系の染料を含有さ
せたものを好ましく用いることができる。但し勿論、そ
の他の材料を用いてもよい。一例を挙げれば、ポリケイ
皮酸ビニルを含有する材料を用いることができる。In the present invention, a material containing a polysulfonic acid type polymer as a polymer and an azo type or non-azo type dye as a dye can be preferably used as an organic antireflection film forming material. . However, of course, other materials may be used. As an example, a material containing polyvinyl cinnamate can be used.
【００１４】[0014]
【作用】本発明によれば、ＵＶ光照射により有機反射防
止膜の構成材料の物性を容易に変化させることができ、
例えばその屈折率をプロセス内で微調整することが可能
である。According to the present invention, the physical properties of the constituent material of the organic antireflection film can be easily changed by UV irradiation.
For example, its refractive index can be fine-tuned in the process.
【００１５】また、ベーキングする際に、ＵＶ光を照射
することで、光学的に適した反射防止膜を得るばかりで
なく、このベーキング中のＵＶ光照射により、ベーキン
グ温度の低温化、処理時間の短縮を図ることもできる。In addition, not only an optically suitable antireflection film is obtained by irradiating UV light during baking, but also the baking temperature is lowered and processing time is shortened by irradiating UV light during baking. It can be shortened.
【００１６】更に、添加する吸収染料の量を、プロセス
中のＵＶ光照射量で調整するようにして、微調整を更に
容易かつ確実に達成できるように構成できる。Further, the amount of the absorbing dye to be added can be adjusted by the UV light irradiation amount during the process so that fine adjustment can be achieved more easily and surely.
【００１７】また、ＵＶ光照射によりレジスト層との混
合層形成を無くすように実施することもできる。It is also possible to eliminate the formation of a mixed layer with the resist layer by irradiating with UV light.
【００１８】[0018]
【実施例】以下本発明の実施例について、図面を参照し
て説明する。但し当然のことではあるが、本発明は以下
に述べる実施例により限定を受けるものではない。Embodiments of the present invention will be described below with reference to the drawings. However, as a matter of course, the present invention is not limited to the examples described below.
【００１９】実施例１ この実施例は、微細化・集積化した超ＬＳＩ装置のパタ
ーン形成を行う場合に、ＫｒＦエキシマレーザー光を用
いたフォトリソグラフィー技術を利用する例に本発明を
具体化したものである。Example 1 In this example, the present invention is embodied in an example in which a photolithography technique using a KrF excimer laser beam is used for pattern formation of a miniaturized and integrated VLSI device. Is.
【００２０】この実施例は、図１に示すように、半導体
基板１上にフォトレジストを形成して露光・現像を行っ
てレジストパターン３を得る工程を備える半導体装置の
製造方法において、少なくとも露光光を照射すべき部分
に有機系の反射防止膜溶剤を塗布し、これを加熱して有
機系の反射防止膜２を得る際に、図１（ｂ）に示す如く
ＵＶ光を照射することにより、得られる反射防止膜の光
学特性を調整するものである。In this embodiment, as shown in FIG. 1, in a method of manufacturing a semiconductor device, which comprises a step of forming a photoresist on a semiconductor substrate 1 and performing exposure / development to obtain a resist pattern 3, at least exposure light is used. When an organic antireflection film solvent is applied to a portion to be irradiated with and is heated to obtain an organic antireflection film 2, by irradiating with UV light as shown in FIG. 1 (b), It is intended to adjust the optical characteristics of the obtained antireflection film.
【００２１】また、本実施例においては、有機系の反射
防止膜には吸収染料を添加するとともに、該吸収染料の
添加量を、ＵＶ光の照射を前提に多めにして添加し、下
地がＡｌなどの高反射下地である場合には少ないＵＶ照
射量とし、また下地が低反射の下地である場合には高い
ＵＶ照射量を加えることで、ＡＲＬに幅をもたせるよう
にした。Further, in this embodiment, an absorption dye is added to the organic antireflection film, and the addition amount of the absorption dye is increased on the premise of UV light irradiation, and the base is made of Al. The ARL has a width by adding a small amount of UV irradiation when the substrate is a highly reflective substrate, and by adding a high amount of UV irradiation when the substrate is a substrate having a low reflection.
【００２２】また、本実施例においては、ＵＶ光の照射
を、加熱によるベーキング工程において行った。Further, in this embodiment, the irradiation with UV light was carried out in the baking step by heating.
【００２３】また、本実施例では、ＵＶ光の照射によ
り、反射防止膜の表面層にレジストとの不相溶層を形成
し、これによりレジストとの混和を防止するようにし
た。Further, in the present embodiment, the incompatibility layer with the resist is formed on the surface layer of the antireflection film by the irradiation of UV light, thereby preventing the mixture with the resist.
【００２４】更に具体的には、本実施例では次のように
して反射防止膜を形成した。図１（ａ）に示すように、
半導体基板１であるここではベア（Ｂａｒｅ）−Ｓｉ上
に、スピンコートによりＡＲＬ溶剤を塗布する（符号４
は塗布用ノズルである）。従来は、この後、ホットプレ
ートにより、２５０℃でベーキングを行うのであるが、
本実施例では、ＵＶキュアを用い、１６０℃でベーキン
グとＵＶ光照射を行った。ＡＲＬ形成後、低吸収化学増
幅ポジ型レジスト（ポリヒドロキシスチレンＰＨＳ樹脂
を生成分とする）を用い、露光を行い、ＮＭＤ−Ｗ
（２．３８％）現像液により、パドル現像を行った。な
お、ベーキングとＵＶ照射（ＵＶキュア）の時間は、６
０秒である。More specifically, in this example, the antireflection film was formed as follows. As shown in FIG.
Here, the ARL solvent is applied by spin coating on bare-Si, which is the semiconductor substrate 1 (reference numeral 4).
Is a coating nozzle). Conventionally, after this, baking is performed at 250 ° C. on a hot plate.
In this example, UV curing was used to perform baking and UV light irradiation at 160 ° C. After forming the ARL, exposure is performed using a low absorption chemical amplification positive type resist (using polyhydroxystyrene PHS resin as a component), and NMD-W is used.
Paddle development was performed with a (2.38%) developer. The time for baking and UV irradiation (UV curing) is 6
0 seconds.
【００２５】この結果、ベア（Ｂａｒｅ）−Ｓｉ上にお
ける０．３５μｍラインアンドスペースの定在波抑制効
果は、線幅変動率で７％から３％へ低減できた。また、
０．３０μｍコンタクトホールでの変動率は、１４％か
ら７％へ低減することが認められた。図２に、定在波効
果の低減作用について示す。グラフＩは、本実施例のＵ
Ｖ照射併用で１６０℃ベークを行った場合、グラフＩＩ
は１６０℃でのベーキングのみ、グラフＩＩＩは２５０
℃でのベーキングのみ、グラフＩＶは反射防止膜を用い
ない場合である。本実施例のグラフＩが、定在波低減に
効果的であることがわかる。As a result, the effect of suppressing standing waves of 0.35 μm line and space on bare-Si could be reduced from 7% to 3% in line width variation rate. Also,
It was confirmed that the variation rate in the 0.30 μm contact hole was reduced from 14% to 7%. FIG. 2 shows the effect of reducing the standing wave effect. Graph I is U of this embodiment.
When baked at 160 ° C with V irradiation, graph II
Is only baked at 160 ° C, graph III is 250
Only baking at 0 ° C., graph IV is the case without an antireflection coating. It can be seen that graph I of this example is effective in reducing standing waves.
【００２６】なお、この実施例では、ＡＲＬ材には、Ｂ
ｒｅｗｅｒ社のＤＵＶ−ＩＩを使用した。このＡＲＬ材
は、樹脂としてポリスルホン酸系の重合体を用い、吸収
染料は非アゾ系のものである。ただしアゾ系でも全く同
様に実施可能である。In this embodiment, the ARL material is B
DUV-II manufactured by Rewer was used. This ARL material uses a polysulfonic acid type polymer as a resin, and the absorbing dye is a non-azo type. However, the same can be carried out with an azo system.
【００２７】光学定数の変化は、 （ａ）１６０℃ベークのみ（従来技術）と （ｂ）１６０℃ベークとＵＶキュアの併用（本実施例）
を比較すると、 （ａ）ｎ＝１．６〜１．７ ｋ＝０．４〜０．３ （ｂ）ｎ＝１．６〜１．７ ｋ＝０．３〜０．２ となる。The change of the optical constants is as follows: (a) 160 ° C. bake only (prior art) and (b) 160 ° C. bake and UV cure in combination (this embodiment).
(A) n = 1.6 to 1.7 k = 0.4 to 0.3 (b) n = 1.6 to 1.7 k = 0.3 to 0.2
【００２８】以上のように、本実施例では、屈折率のｋ
値の調整のみが可能となった。As described above, in this embodiment, the refractive index k
Only the value can be adjusted.
【００２９】なお図２に示すのは、定在波効果のシミュ
レーション結果である。FIG. 2 shows the results of a standing wave effect simulation.
【００３０】本実施例によれば、次の具体的な効果を得
ることができる。 ＵＶ光の照射により、反射防止膜の光学定数を、所望
のものについて、例えばｋ値のみ変化させ、最適化が可
能となる。 添加する吸収染料の量を、プロセス中のＵＶ光照射量
で調整が可能であるため、吸収染料の種類及び量にマー
ジンを持たせることが可能である。 ＵＶ光照射により、ベーキング温度の低温化、処理時
間の短縮が可能である。 ＵＶ光照射により、反射防止膜を硬化させることがで
きるため、レジストとの混合を少なくできる。According to this embodiment, the following specific effects can be obtained. By irradiating with UV light, the optical constant of the antireflection film can be optimized by changing only the k value, for example, of the desired one. Since the amount of the absorbing dye to be added can be adjusted by the UV light irradiation amount during the process, it is possible to give a margin to the type and the amount of the absorbing dye. By irradiating UV light, the baking temperature can be lowered and the processing time can be shortened. Since the antireflection film can be cured by irradiation with UV light, mixing with the resist can be reduced.
【００３１】[0031]
【発明の効果】上述のように、本発明によれば、有機反
射防止膜の光学定数の微調整がプロセス上で可能で、か
つこれを工程数を増やすことなく、簡便な工程で実現で
きるようにした半導体装置の製造方法を提供できる。As described above, according to the present invention, it is possible to finely adjust the optical constant of the organic antireflection film in the process, and to realize it in a simple process without increasing the number of processes. A method of manufacturing a semiconductor device can be provided.
【図１】実施例１の工程を示す図である。FIG. 1 is a diagram showing a process of Example 1.
【図２】実施例１の作用説明図である。FIG. 2 is an explanatory view of the operation of the first embodiment.
【図３】従来の技術を示す図である。FIG. 3 is a diagram showing a conventional technique.
１ 半導体基板（Ｓｉ基板） ２ 反射防止膜（ＡＲＬ） ３ レジストパターン 1 semiconductor substrate (Si substrate) 2 antireflection film (ARL) 3 resist pattern
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/30 ５６６ ５６９ Continuation of front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 21/30 566 569
Claims (4)
露光・現像を行ってレジストパターンを得る工程を備え
る半導体装置の製造方法において、 少なくとも露光光を照射すべき部分に有機系の反射防止
膜溶剤を塗布し、これを加熱して有機系の反射防止膜を
得る際に、ＵＶ光を照射することにより、得られる反射
防止膜の光学特性を調整することを特徴とする半導体装
置の製造方法。1. A method of manufacturing a semiconductor device, comprising a step of forming a photoresist on a semiconductor substrate, exposing and developing the resist pattern to obtain a resist pattern, wherein at least a portion to be exposed to exposure light is an organic antireflection film. When a solvent is applied and heated to obtain an organic antireflection film, the optical characteristics of the obtained antireflection film are adjusted by irradiating with UV light. .
加するとともに、該吸収染料の添加量を、前記ＵＶ光の
照射量に応じて調整することを特徴とする請求項１に記
載の半導体装置の製造方法。2. The absorption dye is added to the organic antireflection film, and the addition amount of the absorption dye is adjusted according to the irradiation amount of the UV light. Of manufacturing a semiconductor device of.
程において行うことを特徴とする請求項１または２に記
載の半導体装置の製造方法。3. The method for manufacturing a semiconductor device according to claim 1, wherein the irradiation with UV light is performed in a baking step by heating.
にレジストとの不相溶層を形成することを特徴とする請
求項１ないし３のいずれかに記載の半導体装置の製造方
法。4. The method for manufacturing a semiconductor device according to claim 1, wherein an incompatible layer with the resist is formed on the surface layer of the antireflection film by irradiation with UV light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17089094A JP3331757B2 (en) | 1994-07-22 | 1994-07-22 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17089094A JP3331757B2 (en) | 1994-07-22 | 1994-07-22 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0837140A true JPH0837140A (en) | 1996-02-06 |
| JP3331757B2 JP3331757B2 (en) | 2002-10-07 |
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ID=15913222
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17089094A Expired - Fee Related JP3331757B2 (en) | 1994-07-22 | 1994-07-22 | Method for manufacturing semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP3331757B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990061111A (en) * | 1997-12-31 | 1999-07-26 | 김영환 | Manufacturing method of semiconductor device |
| US6599682B2 (en) | 2000-04-26 | 2003-07-29 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a finely patterned photoresist layer |
| US6831283B2 (en) | 1999-02-18 | 2004-12-14 | Hitachi, Ltd. | Charged particle beam drawing apparatus and pattern forming method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7919408B2 (en) | 2008-06-30 | 2011-04-05 | Intel Corporation | Methods for fabricating fine line/space (FLS) routing in high density interconnect (HDI) substrates |
-
1994
- 1994-07-22 JP JP17089094A patent/JP3331757B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990061111A (en) * | 1997-12-31 | 1999-07-26 | 김영환 | Manufacturing method of semiconductor device |
| US6831283B2 (en) | 1999-02-18 | 2004-12-14 | Hitachi, Ltd. | Charged particle beam drawing apparatus and pattern forming method |
| US6599682B2 (en) | 2000-04-26 | 2003-07-29 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a finely patterned photoresist layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3331757B2 (en) | 2002-10-07 |
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