JPH08335529A - Thin-film chip parts - Google Patents

Abstract

PURPOSE: To provide a reliable and inexpensive thin-film chip part by preventing the fluctuation and scattering of, for example, resistance which is the characteristic failure and deterioration of, for example, disconnection and short-circuiting. CONSTITUTION: Thin-film chip parts are provided with a double-layer conductor layer 2 manufactured on a substrate 1 by sputtering and an external electrode 6 where Ni layer and further semiconductor layer film are formed on the upper layer of a terminal ground electrode 5 which is coated by the dip coating method, is tentatively dried, and is formed by heat treatment by the electroplating method using a conductive resin with a conductivity by mixing, for example, silver power, copper, and gold power to thermosetting epoxy or phenol resin which can be formed at 200 deg.C so that it is constituted of insulation layer 3 made of double-layer polyimide resin, is cut into a chip size, and is led from an end face part to an electrode part 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a terminal which is an external electrode of a thin film chip component which is a surface mount component used for a circuit of an electronic device.

[0002]

2. Description of the Related Art As shown in FIG. 7, a conventional thin film chip component has a substrate 1b, a conductor layer 2b, an insulating layer 3b, and an electrode portion 4.
b, a terminal base electrode 5b formed by baking silver or sputtering, and a solder-plated (base Ni-plated) external electrode 6b.

As a conventional technique, a terminal of a thick film chip component is formed by a dip coating method using a conductive material in which the terminal base electrode is mixed with glass frit and baked by a heat treatment at 600 ° C. or higher.

Further, in the terminal of the thin film chip component, the terminal base electrode is formed by sputtering, and the Ni layer and the solder layer are formed on the upper layer as the external electrode by electroplating.

[0005]

However, in the conventional thin film chip component, when it is treated at a temperature of 400 ° C. or higher for 30 minutes or longer, characteristic defects such as disconnection and short circuit, or fluctuations and variations in resistance value or the like as characteristic deterioration. Therefore, it is a dip coating method with high productivity in which there is little fluctuation and variation in resistance value or the like as the above-mentioned characteristic defect or characteristic deterioration.
I wanted to be able to process at temperatures of 0-240 ° C. in less than 30 minutes. However, in the conventional thin film chip parts,
Similar to the thick film chip component, when a method of forming a terminal of the thick film chip component by applying a bakeable conductive material by a high productivity dip coating method is used, 600
Since it must be baked at a temperature of ℃ or higher, 400
There is a problem in that it is not possible to form a terminal base electrode that is processed at a temperature of not more than ° C.

Further, since a high vacuum atmosphere is required to form the terminal base electrode by sputtering, the productivity is low and the equipment is expensive, and it is difficult to provide an inexpensive thin film chip component. There was a problem.

An object of the present invention is to provide an inexpensive thin film chip component which has a high productivity and a high reliability, in which fluctuations and variations in resistance values, which are characteristic defects and characteristic deteriorations such as disconnection and short circuit, are reduced. is there.

[0008]

In order to solve the drawbacks of the prior art, the present invention is a thin film chip component having an external electrode, which is composed of at least one conductor layer formed on a substrate and an insulating layer. In the above-mentioned, the external electrode has a terminal base electrode formed of a conductive material having conductivity by mixing metal powder into a thermosetting resin that can be formed by a heat treatment of at least 400 ° C. or less. The present invention provides a thin film chip component and a thin film chip component characterized in that the terminal underlying electrode is formed of the conductive material by a thick film technique.

[0009]

In the dip coating method, the thermosetting epoxy or phenolic resin is mixed with metal powder such as silver powder, copper or gold powder at a temperature of 400 ° C. or lower, preferably 160 to 240 ° C. for 30 minutes or less to conduct electricity. By using a conductive material having a property for the terminal base electrode, it is possible to prevent characteristic defects such as disconnection and short-circuiting in the manufacturing process, fluctuations in resistance value, which is characteristic deterioration, and increase in variations. As a chip component, we can fully satisfy the product characteristics and reliability,
Moreover, it becomes possible to provide a thin film chip component which has high productivity and is inexpensive.

[0010]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of a thin film chip component which is an embodiment of the present invention. 2 to 5 are explanatory views showing a process of forming terminals of the thin film chip component of the present invention.
FIG. 6 is a perspective view of a thin film chip component which is an embodiment of the present invention.

As shown in FIG. 1, the thin film chip component of the present invention comprises a substrate 1, two conductor layers 2 formed on the substrate 1 by sputtering, and an insulating layer 3 of polyimide resin.
It is composed of the electrode part 4 and is cut into a chip size so as to wrap around from the end surface part of the obtained chip to the electrode part 4,
A thermosetting epoxy or phenolic resin that can be formed at 200 ° C is mixed with silver powder, copper, gold powder, etc., and a conductive conductive resin is used. The conductive resin is applied by the dip coating method, temporarily dried, and cured. A terminal underlayer electrode 5 formed by a heat treatment for heat treatment, and an external electrode 6 on which a Ni layer and a solder layer film are formed on the terminal underlayer electrode 5 by electroplating are provided at both ends of the chip. is there.

As shown in FIG. 2, the thin film chip component comprises a rectangular plate-shaped chip 7. In FIG. 3, the chip 7 cut into the chip size shown in FIG.
It is a figure which shows the state inserted in the insertion hole 12 in the longitudinal direction.

The chip 7 is composed of two conductor layers 2 formed on the substrate by sputtering, an insulating layer 3 of polyimide resin, and an electrode portion 4, and cut into a predetermined size.

The chip 7 is inserted into the insertion hole 12 of the carrier 8 as shown in FIG.
As shown in (b), one end face is chamfered by the chamfer pin 9. Further, as shown in FIG. 5, the end face of the chip 7 is pressed by the conductive resin 10 having a constant thickness on the surface plate 11, and the conductive resin 10 is dip-coated on the end face. Is.

As described above, one of the terminal base electrodes is formed by temporarily drying the chip whose end face is coated with the conductive resin 10 in the atmosphere of 120 to 200 ° C. for 10 to 30 minutes. To do.

Similarly, the other end face also has a surfacing pin 9
The other end face of the chip 7 is faced by the face-up pin 9, and the conductive resin 10 spread to a constant thickness on the surface plate 11 is dip-coated on the end face and temporarily dried in the atmosphere. The other terminal base electrode is also formed.

Then, in an atmosphere of 200 to 250 ° C., 2
By performing heat treatment for hardening for 0 to 30 minutes, the terminal base electrodes 5 as shown in FIG. 1 are formed on both ends of the chip 7 in the longitudinal direction.

FIG. 6 shows an embodiment in which the terminals of the thin film chip component according to the present invention described above are applied to a thin film inductor.

As shown in FIG. 6, the thin film chip component is a chip composed of two conductor layers 2a formed by sputtering on a substrate 1a, an insulating layer 3a made of a polyimide resin, and an electrode portion. Forming the terminal base electrode,
An external electrode 6a having a Ni layer and a solder layer film formed thereon by an electroplating method is provided on the upper layer thereof.

Incidentally, SiO ₂ or the like may be used instead of the polyimide resin which is the insulating layer.

The method of making the conductive resin 10 to a constant thickness has the same effect whether squeezing or a screen plate is used, and the amount of coating is changed by performing blotting after dip coating. Can be more stable.

[0023]

As described above, the conductive resin which can be formed by the heat treatment at 400 ° C. or lower is applied to the electrode portion from the end face of the chip, and after the temporary drying, the terminal base electrode is formed by the heat treatment for curing. By doing so, it is possible to reduce fluctuations and variations in resistance values, which are characteristic defects and deteriorations such as disconnection and short circuit, and to fully satisfy stable product characteristics and high reliability, and are inexpensive and highly productive thin film chip components. It has become possible to provide.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a thin film chip component that is an embodiment of the present invention.

FIG. 2 is a perspective view showing a chip used in the thin film chip component of the embodiment of the present invention.

FIG. 3 is a perspective view showing a step of inserting a chip into a carrier for explaining an embodiment of the present invention.

FIG. 4 is an explanatory diagram showing a process of chamfering a chip used for a thin film chip component of an example of the present invention. Figure 4 (a)
It is sectional drawing which shows the process which inserted the chip in the carrier.
FIG. 4 (b) is a cross-sectional view showing a step of pushing the end face of the chip with the chamfering pin to perform chamfering.

FIG. 5 is an explanatory diagram showing a step of dip-coating a chip used in the thin film chip component of the example of the present invention.

FIG. 6 is a perspective view of a thin film chip component that is an embodiment of the present invention.

FIG. 7 is a cross-sectional view of a conventional thin film chip component.

[Explanation of symbols]

1, 1a, 1b Substrate 2, 2a, 2b Conductor layer 3, 3a, 3b Insulating layer 4, 4b Electrode part 5 Terminal base electrode (conductive resin) 5b Terminal base electrode (baking or sputtering) 6, 6a, 6b External Electrode (Ni plating / solder plating) 7 Chip 8 Carrier 9 Chamfering pin 10 Conductive resin 11 Surface plate 12 Insertion hole

Claims (2)

[Claims] 1. A thin film chip component having a conductor layer made of at least one layer on a substrate and an external electrode composed of an insulating layer, wherein the external electrode is at least 400.
A thin film chip component comprising a terminal base electrode formed of a conductive material having conductivity by mixing metal powder into a thermosetting resin that can be formed by heat treatment at a temperature of ℃ or less. 2. The thin film chip component according to claim 1, wherein the terminal base electrode is formed of the conductive material by a thick film technique.