JPH08330357A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE: To provide a technique, by which the reliability of a semiconductor device, in which a clearance region between a base substrate and a semiconductor pellet is filled with a resin, is improved. CONSTITUTION: In the manufacture of a semiconductor device, in which a clearance region between a base substrate and a semiconductor pellet 2 loaded on the pellet loading surface of the base substrate through bump electrodes 3 is filled with a resin 4, the resin 4 is vibrated before the resin 4 filled into the clearance region between the base substrate and the semiconductor pellet 2 is cured. The resin 4 is vibrated after the clearance region between the base substrate and the semiconductor pellet 2 is filled completely with the resin 4. The resin 4 is vibrated while filling the clearance region between the base substrate and the semiconductor pellet 2 with the resin 4. The resin 4 is vibrated while heating the base substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a gap region between a base substrate and a semiconductor pellet mounted on a pellet mounting surface of the base substrate with a bump electrode interposed therebetween. The present invention relates to a technique effectively applied to a resin-sealed semiconductor device filled with a resin.

[0002]

2. Description of the Related Art As a semiconductor device, for example, electronic materials issued by the Industrial Research Committee [September 1994, pages 22 to 2]
9], a semiconductor device in which a resin is filled in a gap region between a base substrate and a semiconductor pellet mounted on a pellet mounting surface of the base substrate with a bump electrode interposed therebetween. Is being developed. In this type of semiconductor device, the mechanical strength of the bump electrode is supplemented by the mechanical strength of the resin to prevent the bump electrode from being damaged due to the difference in thermal expansion coefficient between the base substrate and the semiconductor pellet.

[0003]

However, as a result of examining the above-mentioned semiconductor device, the present inventor found the following problems.

In the manufacturing process of the semiconductor device,
When filling the resin in the gap area between the base substrate and the semiconductor pellet, the liquid resin supplied from the syringe flows from the supply point along the peripheral portion of the semiconductor pellet, and then in the central portion of the semiconductor pellet. Flow toward. That is, since the resin is gradually filled from the peripheral portion of the gap area between the base substrate and the semiconductor pellet toward the central portion thereof, air bubbles entraining air in the resin are generated. These bubbles remain as they are even after the resin is cured. For this reason,
Bubbles expand due to heat during the temperature cycle test of the semiconductor device or heat when mounting the semiconductor device on the mounting surface of the mounting substrate, causing damage to the base substrate, semiconductor pellets, bump electrodes, resin, etc. Reliability is reduced.

An object of the present invention is to provide a technique capable of improving the reliability of a semiconductor device in which a resin is filled in a gap area between a base substrate and a semiconductor pellet.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0007]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

In a method of manufacturing a semiconductor device, wherein a resin is filled in a gap area between a base substrate and a semiconductor pellet mounted on a pellet mounting surface of the base substrate with a bump electrode interposed therebetween. Before the resin filled in the gap area between the substrate and the semiconductor pellet is cured, the resin is vibrated.

[0009]

According to the above-mentioned means, the bubbles remaining in the resin move due to the vibration applied to the resin, so that the bubbles can be expelled from the resin. As a result, since no bubbles remain in the cured resin, the base substrate caused by the expansion of the bubbles during the temperature cycle test of the semiconductor device or when mounting the semiconductor device on the mounting surface of the mounting substrate, Prevents damage to semiconductor pellets, bump electrodes, resin, etc.
The reliability of the semiconductor device can be improved.

[0010]

Embodiments of the present invention will be described below with reference to BGA ( B all
G rid A rray) will be described with an example in which the present invention is applied to a semiconductor device employing the structure.

In all the drawings for explaining the embodiments, parts having the same functions are designated by the same reference numerals, and the repeated description thereof will be omitted.

A schematic structure of a semiconductor device adopting a BGA structure which is an embodiment of the present invention is shown in FIG. 1 (plan view) and FIG. 2 (cross-sectional view taken along line AA shown in FIG. 1). .

As shown in FIGS. 1 and 2, the semiconductor device adopting the BGA structure mounts the semiconductor pellets 2 on the pellet mounting surface of the base substrate 1.

The base substrate 1 has a two-layer wiring structure, for example. The base substrate 1 is formed of, for example, a ceramic substrate made of aluminum oxide. A plurality of electrodes 1A are arranged on the pellet tower mounting surface of the base substrate 1. A plurality of electrodes 1B are arranged on the back surface of the base substrate 1 which faces the pellet mounting surface. The electrodes 1A and 1B are electrically connected to each other via the wiring of the base substrate 1.

The semiconductor pellet 2 is formed of a semiconductor substrate made of, for example, single crystal silicon, and a logic circuit system, a storage circuit system or a mixed circuit system thereof is mounted on the main surface (element forming surface) thereof. A plurality of external terminals 2A are arranged on the main surface side of the semiconductor pellet 2.

The external terminal 2A of the semiconductor pellet 2 and the electrode 1A of the base substrate 1 are electrically and mechanically connected via the bump electrode 3. That is, the semiconductor pellets 2 are mounted on the pellet mounting surface of the base substrate 1 with the bump electrodes 3 interposed. The bump electrode 3 is, for example, Pb-
It is made of a Sn-based alloy material.

The electrode 1B of the base substrate 1 has, for example, P
The bump electrodes 5 made of a b-Sn alloy material are electrically and mechanically connected. The bump electrode 5 is electrically and mechanically connected to the electrode arranged on the mounting surface of the mounting substrate in the mounting process of the semiconductor device.

A resin 4 is filled in a gap region between the pellet tower mounting surface of the base substrate 1 and the main surface of the semiconductor pellet 2. The resin 4 is formed of, for example, an insulating resin obtained by adding a silica filler, a curing accelerator, a coupling agent, etc. to an epoxy thermosetting resin. Thus, by filling the resin 4 in the gap area between the base substrate 1 and the semiconductor pellet 2, the mechanical strength of the bump electrode 3 can be supplemented by the mechanical strength of the resin 4, and thus the base substrate 1 It is possible to prevent the bump electrode 3 from being damaged due to a difference in thermal expansion coefficient between the semiconductor pellet 2 and the semiconductor pellet 2.

Next, a method of manufacturing a semiconductor device having the BGA structure will be described with reference to the drawings.

First, the external terminal 2A on the main surface of the semiconductor pellet 2 is electrically and mechanically connected to the electrode 1A on the pellet mounting surface of the base substrate 1 with the bump electrode 3 interposed therebetween.
As shown in (cross-sectional view), the semiconductor pellets 2 are mounted on the pellet mounting surface of the base substrate 1.

Next, with the base substrate 1 fixed on the inclined surface of the tilt table 6 and the base substrate 1 tilted, as shown in FIG.
As shown in (cross-sectional view), the liquid resin 4 is supplied from the syringe 7 to the gap region between the base substrate 1 and the semiconductor pellet 2, and the liquid resin 4 is supplied to the gap region between the base substrate 1 and the semiconductor pellet 2. Fill with resin 4. The liquid resin 4 is formed of, for example, an insulating resin obtained by adding a silica filler, a curing accelerator, a coupling agent and the like to an epoxy thermosetting resin. In this step, since the liquid resin 4 is gradually filled from the peripheral portion of the gap area between the base substrate 1 and the semiconductor pellet 2 toward the central portion thereof, the air bubbles 8 entraining air in the resin 4 are appear.

Next, the base substrate 1 is fixed to the vibrating table 9, and the liquid resin 4 filled in the gap region between the base substrate 1 and the semiconductor pellet 2 is vibrated. The vibration applied to the resin 4 is, for example, a frequency of 28 [KHz] and an output of 60.
The condition is [W]. Frequency is 100 [Hz] -40
The output can be used up to about [KHz] and up to about 10 [W] to 600 [W]. In this step, the bubbles 8 remaining in the liquid resin 4 are moved by the vibration applied to the liquid resin 4, so that the bubbles 8 can be expelled from the liquid resin 4.

Next, the liquid resin 4 is heat-treated to be hardened. In this step, the air bubbles 8 remaining in the liquid resin 4 have been expelled from the liquid resin 4 in the above-described step, so no air bubbles 8 remain in the cured resin 4.

Next, a bump electrode 5 is formed on the surface of the electrode 1B arranged on the back surface of the base substrate 1. Through these steps, the semiconductor device shown in FIGS. 1 and 2 is almost completed.

Next, the semiconductor device is subjected to a temperature cycle test to select good products and defective products. After that, the semiconductor device is shipped as a product. The semiconductor device shipped as a product is mounted on the upper surface of the mounting surface of the mounting board.

The relationship between the number of bubbles 8 generated in the resin 4 and the height of the bump electrode 5 is shown in FIG. As shown in FIG. 6, when the resin 4 is vibrated, the bubbles 8 do not remain in the cured resin 4 even if the height of the bump electrode 8 is lowered.

FIG. 7 shows the relationship between the number of defects generated during the temperature cycle test, the number of defects generated during mounting, and the height of the bump electrode 5. The number of defects generated during the temperature cycle test is -5.
1000 under the temperature conditions of 5 ° C / 30 minutes and 150 ° C / 30 minutes
This is the data when cycled. The number of defects generated during mounting is 21 after absorbing moisture at 85 ° C / 40% for 336 hours.
It is data when reflow is performed under a temperature condition of 5 ° C. As shown in FIG. 8, when the resin 4 is vibrated, the base substrate 1, the semiconductor pellets 2, the semiconductor pellets 2,
Defects such as damage that occur in the bump electrodes 3 and the resin 4 do not occur.

As described above, the resin 4 is filled in the gap region between the base substrate 1 and the semiconductor pellet 2 mounted on the pellet mounting surface of the base substrate 1 with the bump electrode 3 interposed therebetween. The method for manufacturing a semiconductor device includes a step of vibrating the resin 4 before the resin 4 filled in the gap area between the base substrate 1 and the semiconductor pellet 2 is cured. As a result, the bubbles 8 remaining in the liquid resin 4 move due to the vibration applied to the liquid resin 4,
The bubbles 8 can be expelled from the liquid resin 4. As a result, since no bubbles remain in the cured resin 4, the base caused by the expansion of the bubbles 8 is caused during the temperature cycle test of the semiconductor device or when the semiconductor device is mounted on the mounting surface of the mounting substrate. It is possible to prevent damage to the substrate 1, the semiconductor pellets 2, the bump electrodes 3, the resin 4, etc., and improve the reliability of the semiconductor device.

In the above-described embodiment, the resin 4 is vibrated after the resin 4 is completely filled in the gap area between the base substrate 1 and the semiconductor pellet 2.
The resin 4 may be vibrated while being filled with the resin 4 in the gap region between the semiconductor pellet 2 and the semiconductor pellet 2. In this case, resin 4
It is possible to shorten the vibration time given to the resin 4 as compared with the case where the vibration is given after the completion of the filling.

Further, the vibration applied to the resin 4 may be performed while heating the base substrate 1 under the temperature condition in which the resin 4 made of a thermosetting resin is not cured. In this case, since the fluidity of the resin 4 is improved and the mobility of the bubbles 8 remaining in the resin 4 can be enhanced, the bubbles 8 can be reliably driven out of the resin 4, and The applied vibration time can be further shortened.

As the resin 4, for example, phenolic thermosetting resin, silicone thermosetting resin, polyimide thermosetting resin, an insulating resin obtained by adding a silica filler, a curing accelerator, a coupling agent, or the like is used. Good. Even in this case, the bubbles 8 can be expelled from the resin 4 as in the above-described embodiment.

As the resin 4, an insulating thermoplastic resin may be used. Even in this case, the bubbles 8 can be expelled from the resin 4 as in the above-described embodiment.

As the base substrate 1, a ceramic substrate made of alumina, aluminum nitride or the like, or a plastic substrate obtained by impregnating glass fiber with epoxy resin, polyimide resin or the like may be used. Even in this case, the bubbles 8 can be expelled from the resin 4 as in the above-described embodiment.

As described above, the inventions made by the present inventor are
Although the present invention has been specifically described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

For example, according to the present invention, a PGA ( P) in which a lead pin is connected to the surface of the electrode arranged on the back surface of the base substrate is used.
can be applied to a semiconductor device in G rid A rray) structure.

[0036]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

The reliability of the semiconductor device in which the resin is filled in the gap region between the base substrate and the semiconductor pellet can be improved.

[Brief description of drawings]

FIG. 1 is a plan view showing a schematic configuration of a semiconductor device adopting a BGA structure which is an embodiment of the present invention.

FIG. 2 is a sectional view taken along the line AA shown in FIG.

FIG. 3 is a cross-sectional view illustrating the method for manufacturing the semiconductor device.

FIG. 4 is a cross-sectional view for explaining the method for manufacturing the semiconductor device.

FIG. 5 is a cross-sectional view illustrating the method for manufacturing the semiconductor device.

FIG. 6 is a diagram showing the relationship between the number of bubbles generated in resin and the height of bump electrodes.

FIG. 7 is a diagram showing the relationship between the number of defects generated during a temperature cycle test, the number of defects generated during mounting, and the height of bump electrodes.

[Explanation of symbols]

1 ... Base substrate, 1A, 1B ... Electrode, 2 ... Semiconductor pellet, 2A ... External terminal, 3 ... Bump electrode, 4 ... Resin, 5 ...
Bump electrode, 6 ... Inclined table, 7 ... Syringe, 8 ... Bubble, 9
… Shaking table.

Claims (4)

[Claims] 1. A method of manufacturing a semiconductor device, wherein resin is filled in a gap region between a base substrate and a semiconductor pellet mounted on a pellet mounting surface of the base substrate with a bump electrode interposed therebetween. A method of manufacturing a semiconductor device, comprising: vibrating the resin before the resin filled in a gap region between the base substrate and the semiconductor pellet is cured. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the vibration applied to the resin is performed after the resin is completely filled in the gap area between the base substrate and the semiconductor pellet. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the vibration applied to the resin is performed while the resin is being filled in a gap region between the base substrate and the semiconductor pellet. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the vibration applied to the resin is performed while heating the base substrate.