JPH0832940B2 - Shield plate for thin film forming equipment - Google Patents
Shield plate for thin film forming equipmentInfo
- Publication number
- JPH0832940B2 JPH0832940B2 JP62249475A JP24947587A JPH0832940B2 JP H0832940 B2 JPH0832940 B2 JP H0832940B2 JP 62249475 A JP62249475 A JP 62249475A JP 24947587 A JP24947587 A JP 24947587A JP H0832940 B2 JPH0832940 B2 JP H0832940B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film forming
- plate
- weight
- shield plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、スパツタリング、C.V.D.、またはP.V.D.
等により薄膜を形成する際に、飛散するターゲツト材が
真空容器内壁または真空内部品に付着するのを防止する
しやへい板に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to spattering, CVD, or PVD.
When a thin film is formed by a method such as the one described above, the present invention relates to a shroud plate which prevents the scattered target material from adhering to the inner wall of the vacuum container or the parts in the vacuum.
〔従来の技術〕 薄膜成形装置として、一般にスパツタリング装置、化
学蒸着装置、物理蒸着装置等が知られている。そのうち
で最も代表的なスパツタリング装置が第1図に示されて
いる。[Prior Art] As a thin film forming apparatus, a sputtering device, a chemical vapor deposition device, a physical vapor deposition device, etc. are generally known. The most typical sputtering device among them is shown in FIG.
第1図において、1は真空容器、2はターゲツト、3
は基板(被処理物)、4はしやへい板である。ターゲツ
ト2にAr+を衝突させ、これによりはじき出された飛散
ターゲツト材は、基板3に堆積し、薄膜を形成する。In FIG. 1, 1 is a vacuum container, 2 is a target, 3
Is a substrate (object to be processed) and 4 is a shear plate. Ar + is made to collide with the target 2 and the scattered target material thus ejected is deposited on the substrate 3 to form a thin film.
このスパツタリングに際し、飛散ターゲツト材が真空
容器1の内壁に付着するのを防止するために、しやへい
板4を設けることが一般に行なわれている。At the time of this sputtering, in order to prevent the scattered target material from adhering to the inner wall of the vacuum container 1, a shied plate 4 is generally provided.
上記しやへい板4は、従来、ステンレス鋼で作製され
ており、飛散して付着したターゲツト材が剥離し落下す
る前に、硝酸および弗酸を主体とした腐食性の強い混酸
により、上記しやへい板を洗浄し、付着したターゲツト
材を混酸中に溶出させ、完全に除去し、再利用してい
た。Conventionally, the shiny plate 4 is made of stainless steel, and before the target material that is scattered and adheres is peeled off and dropped, the shied plate 4 is made of nitric acid and hydrofluoric acid as a main corrosive mixed acid. The hard plate was washed and the adhering target material was eluted in mixed acid, completely removed, and reused.
しかしながら、上記ステンレス鋼板により作製したし
やへい板は、ターゲツト材との密着性が悪く、剥離しや
すいため、たびたび洗浄することが必要であり、稼動率
低下の原因となつており、また、しやへい板を洗浄して
再利用する際に、ステンレス鋼は、硝酸および弗酸を主
体とした混酸に対する耐食性が不十分であり寿命が短い
という問題点があつた。However, the sushi plate made of the above-mentioned stainless steel plate has poor adhesion with the target material and is easily peeled off, so it needs to be washed frequently, which causes a decrease in the operating rate. When cleaning and reusing the hard plate, there is a problem that stainless steel has insufficient corrosion resistance to a mixed acid mainly composed of nitric acid and hydrofluoric acid and has a short life.
もし、たびたび洗浄することなくしやへい板を使用
し、しやへい板に付着したターゲツト材がターゲツトの
表面に落下すると、ターゲツトの表面は汚染され、所望
の成分組成のスパツタリング薄膜を形成することができ
なくなるからである。If the target material adhered to the shroud is dropped on the surface of the target without frequent cleaning, the surface of the target will be contaminated and a sputtering thin film of the desired composition can be formed. Because it will not be possible.
また、頻繁な洗浄は、洗浄期間中にスパツタリング操
業を停止しなければならないため、稼動率は低下し、し
たがつて生産性も低下する。このため、上記飛散ターゲ
ツト材がしやへい板に付着堆積しても、なかなか剥離し
ない材料からなるしやへい板の出現が望まれていた。Further, in frequent cleaning, the spattering operation must be stopped during the cleaning period, so the operating rate is reduced, and thus the productivity is also reduced. For this reason, it has been desired to develop a shiny board made of a material that does not easily peel off even when the scattered target material adheres to and deposits on the shiny board.
そこで、本発明者等は、飛散したターゲツト材との密
着性が良好で、剥離しにくく、洗浄せずに使用できる期
間が長くとれ、さらに硝酸および弗酸を主体とした洗浄
溶液に対する耐食性の優れたしやへい板を開発すべく研
究を行つた結果、重量%(以下、%は重量%を示す)
で、 Cr:25〜75%、 さらに、必要に応じて、 Fe:0.1〜25%、および/または、 Ti、Zr、Nb、Mo、W、Cuのうち1種または2種以上:0.1
〜5%、 を含有し、 残部:Niまたは不可避不純物からなる高クロムニツケル
合金を用いて作製したしやへい板は、飛散したターゲツ
ト材との付着性が良好で、剥離しにくく、洗浄せずに使
用できる期間が長くとれ、また硝酸および弗酸を主体と
した洗浄溶液に対して耐食性が優れているという知見を
得たのである。Therefore, the present inventors have found that the adhesiveness with the scattered target material is good, the peeling is difficult, the period of use without cleaning is long, and the corrosion resistance to a cleaning solution mainly containing nitric acid and hydrofluoric acid is excellent. As a result of conducting research to develop a tassel board, weight% (hereinafter,% means weight%)
And Cr: 25 to 75%, and, if necessary, Fe: 0.1 to 25%, and / or one or more of Ti, Zr, Nb, Mo, W and Cu: 0.1
〜5%, balance: Ni or high chrome nickel alloy made of unavoidable impurities, the shingled plate has good adhesion to the scattered target material, is hard to peel off, and is not washed. It has been found that the usable period of time is long and the corrosion resistance to the cleaning solution mainly containing nitric acid and hydrofluoric acid is excellent.
この発明は、かかる知見にもとづいてなされたもので
あつて、以下に成分を上記の如く限定した理由について
述べる。The present invention has been made based on such findings, and the reasons why the components are limited as described above will be described below.
(a) Cr Cr成分は、ターゲツト材の密着性を向上させ、耐食性
を向上させるが、その含有量が25%より少ないとターゲ
ツト材の密着性が十分でなく、また硝酸および弗酸を主
体とした溶液に対する耐食性が十分に得られない。一方
75%を越えて含有すると加工上困難を伴う。そのためCr
含有量は25〜75%と定めた。(A) Cr The Cr component improves the adhesion of the target material and corrosion resistance, but if the content is less than 25%, the adhesion of the target material is insufficient and nitric acid and hydrofluoric acid are the main constituents. Corrosion resistance to the above solution cannot be obtained sufficiently. on the other hand
If the content exceeds 75%, processing is difficult. Therefore Cr
The content was set to 25-75%.
(b) Fe Fe成分は、組織を微細化し靭性を向上させるが、その
含有量が0.1%より少ないと組織の微細化に効果がな
く、一方25%を越えて含有するとσ相が析出し脆化する
ので好ましくない。したがつて、Fe含有量は0.1〜25%
と定めた。(B) Fe Fe component refines the structure and improves toughness, but if its content is less than 0.1%, it has no effect on the refinement of the structure, while if it exceeds 25%, the σ phase precipitates and becomes brittle. It is not preferable because Therefore, the Fe content is 0.1-25%
I decided.
(c) Ti、Zr、Nb、Nb、Mo、WおよびCu これらの成分は、耐食性および加工性を一段と向上せ
しめるが、その含有量が0.1%より少ないと耐食性およ
び加工性向上の効果がなく、一方5%を越えて含有して
もより一層の効果は得られない。したがつて、上記成分
の含有量は0.1〜5%と定めた。(C) Ti, Zr, Nb, Nb, Mo, W and Cu These components further improve the corrosion resistance and workability, but if the content is less than 0.1%, the corrosion resistance and workability are not improved, On the other hand, if the content exceeds 5%, no further effect can be obtained. Therefore, the content of the above components was set to 0.1 to 5%.
つぎに、この発明を実施例にもとづいて具体的に説明
する。Next, the present invention will be specifically described based on Examples.
通常の溶解法によつて、第1表に示される成分組成を
もつた高クロムニツケル合金インゴットを作製し、これ
を通常の熱間圧延したのち冷間圧延して、厚さ:3mmの高
クロムニツケル合金板を作製した。上記厚さ:3mmの高ク
ロムニツケル合金板を基板とし、サイアロン、アルミナ
およびシリコンナイトライドをターゲツトとしてスパツ
タリングにより、上記基板表面に薄膜を形成し、何バツ
チで剥離に至るかを試験した結果を第1表に示した。A high-chromium nickel alloy ingot having the composition shown in Table 1 was prepared by a normal melting method, and then this was hot-rolled normally and then cold-rolled to obtain a high-chrome nickel plate having a thickness of 3 mm. A nickel alloy plate was prepared. The thickness: 3 mm high chromium nickel alloy plate as the substrate, by sputtering with sialon, alumina and silicon nitride as the target, by sputtering to form a thin film on the substrate surface, the result of testing how many batches lead to peeling The results are shown in Table 1.
1バツチのスパツタリング条件は次の通りである。 The sputtering conditions for one batch are as follows.
放電電力:200W、 ガス条件:Arガス、1.0×10-3Torr、 スパツタリング時間:3時間、 さらに、上記厚さ:3mmの高クロムニツケル合金板を、湿
度:60℃ HF:3%、 HNO3:17% 含有の水溶液に365日間浸漬し、その板厚の減少量を測
定することにより耐食試験を行つた。その結果も第1表
に示した。Discharge power: 200W, Gas conditions: Ar gas, 1.0 × 10 -3 Torr, Sputtering time: 3 hours, Furthermore, the above thickness: 3 mm high chrome nickel alloy plate containing humidity: 60 ° C. HF: 3%, HNO 3 : 17% A corrosion resistance test was conducted by immersing in an aqueous solution for 365 days and measuring the amount of reduction in the plate thickness. The results are also shown in Table 1.
なお、この実施例では、スパツタリング装置のしやへ
い板について述べているが、上記スパツタリング装置に
限定されるものでなく、この発明の薄膜形成装置用しや
へい板は、化学蒸着装置、物理蒸着装置などの蒸着装置
のしやへい板としても使用できるものである。It should be noted that, in this embodiment, although the sputtering plate of the sputtering device is described, it is not limited to the above sputtering device, and the polishing plate for the thin film forming apparatus of the present invention is a chemical vapor deposition device or a physical vapor deposition device. It can also be used as a shield or a shield for a vapor deposition apparatus such as an apparatus.
上記第1表に示されているように、上記成分組成を有
する高クロムニツケル合金で構成されているしやへい板
を薄膜形成装置に適用することにより、飛散ターゲツト
材との付着性が良好で剥離しにくいため、洗浄せずに使
用できるバツチ回数が多くとれ、また耐食性もすぐれて
いるので洗浄による腐食が少なく、繰り返し長時間使用
できるというすぐれた効果を奏するものである。As shown in Table 1 above, the application of the shroud plate made of the high chromium nickel alloy having the above-mentioned composition to the thin film forming apparatus provides good adhesion to the scattered target material. Since it is difficult to peel off, it can be used many times without cleaning, and since it has excellent corrosion resistance, it has less corrosion due to cleaning and can be repeatedly used for a long time.
第1図は、スパツタリング装置の概略断面図である。 FIG. 1 is a schematic sectional view of a sputtering device.
Claims (4)
ことを特徴とする薄膜形成装置用しやへい板。1. A thin plate for a thin film forming apparatus, comprising a high chromium nickel alloy having a composition of Cr: 25 to 75% by weight, balance: Ni and inevitable impurities.
ことを特徴とする薄膜形成装置用しやへい板。2. A thin film forming apparatus characterized by comprising a chromium nickel alloy having a composition of Cr: 25 to 75% by weight, Fe: 0.1 to 25% by weight, the balance: Ni and inevitable impurities. Hard board.
0.1〜5重量%、 残部:Niおよび不可避不純物 からなる組成の高クロムニツケル合金で構成されている
ことを特徴とする薄膜形成装置用しやへい板。3. Cr: 25 to 75% by weight, one or more of Ti, Zr, Nb, Mo, W, and Cu:
A thin plate for a thin film forming apparatus, characterized by being composed of a high chromium nickel alloy having a composition of 0.1 to 5% by weight and the balance: Ni and inevitable impurities.
0.1〜5重量%、 残部:Niおよび不可避不純物 からなる組成の高クロムニツケル合金で構成されている
ことを特徴とする薄膜形成装置用しやへい板。4. Cr: 25 to 75% by weight, Fe: 0.1 to 25% by weight, one or more of Ti, Zr, Nb, Mo, W, and Cu:
A thin plate for a thin film forming apparatus, characterized by being composed of a high chromium nickel alloy having a composition of 0.1 to 5% by weight and the balance: Ni and inevitable impurities.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62249475A JPH0832940B2 (en) | 1987-10-02 | 1987-10-02 | Shield plate for thin film forming equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62249475A JPH0832940B2 (en) | 1987-10-02 | 1987-10-02 | Shield plate for thin film forming equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0192335A JPH0192335A (en) | 1989-04-11 |
JPH0832940B2 true JPH0832940B2 (en) | 1996-03-29 |
Family
ID=17193515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62249475A Expired - Lifetime JPH0832940B2 (en) | 1987-10-02 | 1987-10-02 | Shield plate for thin film forming equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0832940B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5298287A (en) * | 1993-02-05 | 1994-03-29 | United Technologies Corporation | Method of making CVD Si3 N4 |
JP5603219B2 (en) | 2009-12-28 | 2014-10-08 | キヤノンアネルバ株式会社 | Thin film forming equipment |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS582259B2 (en) * | 1976-12-24 | 1983-01-14 | 三菱マテリアル株式会社 | A high chromium alloy that exhibits excellent corrosion resistance against mixed acids consisting of nitric acid and hydrofluoric acid. |
JPS5817247B2 (en) * | 1977-05-17 | 1983-04-06 | 三菱マテリアル株式会社 | High chromium alloy with good corrosion resistance and weldability against mixed acids consisting of nitric acid and hydrofluoric acid |
JPS62107057A (en) * | 1985-11-05 | 1987-05-18 | Hitachi Ltd | Vacuum deposition device |
-
1987
- 1987-10-02 JP JP62249475A patent/JPH0832940B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0192335A (en) | 1989-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH05230628A (en) | Metal film forming device and metal recovery method in metal film forming device | |
JPS6014823B2 (en) | Alloy for coating the surface of nickel base material | |
TW533514B (en) | Physical vapor deposition target/backing plate assemblies; and methods of forming physical vapor deposition target/backing plate assemblies | |
KR910009840B1 (en) | Corrosion-resistant and heat-resistant amorphous aluminum -based alloy thin film and process for producing the same | |
JPH0387358A (en) | Film forming device and formation of film and sputtering device | |
EP2281915B1 (en) | Water-reactive al composite material, water-reactive al film, process for production of the al film, and constituent member for film deposition chamber | |
JPH0832940B2 (en) | Shield plate for thin film forming equipment | |
JP3755552B2 (en) | Aluminum or aluminum alloy sputtering target | |
US4786468A (en) | Corrosion resistant tantalum and tungsten alloys | |
JP2000144380A (en) | Super corrosion-resisting alloy and its manufacture | |
RU2468117C2 (en) | Al COMPOSITE MATERIAL REACTING WITH WATER, Al FILM REACTING WITH WATER, METHOD TO PRODUCE THIS Al FILM AND COMPONENT OF FILM-PRODUCING CHAMBER | |
Bullough et al. | The Quantitative Adhesion of Nickel Electrodeposits to Aluminium Alloys | |
JP7129581B1 (en) | Materials for deposition equipment | |
JPH0892728A (en) | Formation of sputtered coating film on gold plated substrate | |
JPH0372055A (en) | Highly corrosion resistant amorphous alloy | |
JPH083669A (en) | Nickel-base alloy powder for thermal spraying and composite member obtained by thermally spraying this nickel-base alloy powder | |
JPH06228746A (en) | High melting point metallic sputtering target | |
JP2896518B2 (en) | Manufacturing method of low melting point sputtering target | |
JPH07216530A (en) | Jig for vapor deposition and method for regenerating jig for vapor deposition | |
JP3143154B2 (en) | Plasma vapor deposition | |
JPH02267261A (en) | Production of target for sputtering | |
JPS639908A (en) | Magnet | |
GB1488559A (en) | Method of plating a substrate | |
JPH0841624A (en) | Jig for vacuum deposition and regenerating of jig for vacuum deposition | |
JPH05247634A (en) | Sputtering device |