JPH08327801A - Conductive antireflection plate and image display device using the same - Google Patents
Conductive antireflection plate and image display device using the sameInfo
- Publication number
- JPH08327801A JPH08327801A JP7134422A JP13442295A JPH08327801A JP H08327801 A JPH08327801 A JP H08327801A JP 7134422 A JP7134422 A JP 7134422A JP 13442295 A JP13442295 A JP 13442295A JP H08327801 A JPH08327801 A JP H08327801A
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- Prior art keywords
- thin film
- transparent thin
- transparent
- refractive index
- film
- Prior art date
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、透明基板上に導電性の
透明薄膜と屈折率の異なる複数の透明薄膜が形成される
導電性反射防止板及びこれを用いた映像表示装置に関す
る。詳しくは上記複数の透明薄膜の屈折率や膜厚を制御
することにより、透明基板への導電性の透明薄膜の密着
性を高め、かつ広範囲の波長領域において低反射率を実
現する導電性反射防止板及びこれを用いた映像表示装置
に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive antireflection plate in which a conductive transparent thin film and a plurality of transparent thin films having different refractive indexes are formed on a transparent substrate, and an image display device using the same. Specifically, by controlling the refractive index and film thickness of the transparent thin films, the adhesion of the conductive transparent thin films to the transparent substrate is enhanced, and the conductive anti-reflection which realizes the low reflectance in a wide wavelength range. The present invention relates to a plate and a video display device using the plate.
【0002】[0002]
【従来の技術】コンピュータのディスプレーで使用され
る陰極線管(以下、CRTと称する。)等においては、
外部から入射する光が映像が表示される前面パネル表面
で反射することにより前面パネルに形成される映像が見
え難くなったり、コンピュータの動作中の帯電によって
人体等との間において放電が発生するのを防止するため
に、その前面パネル表面に導電性反射防止膜を設けるよ
うにしている。2. Description of the Related Art In a cathode ray tube (hereinafter referred to as CRT) used in a computer display,
Light incident from the outside is reflected on the surface of the front panel on which an image is displayed, which makes it difficult to see the image formed on the front panel, and discharges between the human body and others due to charging during operation of the computer. To prevent this, a conductive antireflection film is provided on the surface of the front panel.
【0003】そして、上記導電性反射防止膜は、CRT
の前面パネル表面に直接配する、或いはCRTの前面パ
ネルの形状と同様の形状のガラスパネルに導電性反射防
止膜を形成し、これをCRTの前面パネル上に配するこ
とにより、CRTの前面パネルに設けられる。The conductive antireflection film is a CRT.
CRT front panel by directly arranging it on the front panel surface of CRT, or by forming a conductive antireflection film on a glass panel of the same shape as the front panel of CRT and arranging this on the front panel of CRT. It is provided in.
【0004】しかしながら、上記のようにして導電性反
射防止膜をCRTの前面パネルに設けると、反射防止性
能は十分であるものの、大規模な成膜装置が必要で製造
コストが高価になる、CRT自体の重量が重くなる等の
不都合が生じてしまう。また、CRTと人体等との間に
導電性反射防止膜を施したパネル状のフィルターを設置
してCRTの前面パネル表面の反射の防止や人体等との
間の放電を防止することも提案されているが、この方法
ではCRTの前面パネル自体の反射率を変えているわけ
ではないため前面パネルにおける光量が低下したり、C
RTの前面パネル表面の帯電を防止することが不可能で
あるため前面パネル表面への埃等の付着を防止すること
が出来ず、結果的に視覚性を低下させてしまうこととな
る。However, when the conductive antireflection film is provided on the front panel of the CRT as described above, the antireflection performance is sufficient, but a large-scale film forming apparatus is required and the manufacturing cost becomes high. This causes inconveniences such as an increase in the weight of itself. It is also proposed to install a panel-shaped filter having a conductive antireflection film between the CRT and the human body to prevent reflection on the front panel surface of the CRT and prevent discharge between the human body and the like. However, in this method, the reflectance of the front panel of the CRT itself is not changed, so that the light amount on the front panel is reduced or C
Since it is impossible to prevent the surface of the front panel of the RT from being charged, it is not possible to prevent dust and the like from adhering to the surface of the front panel, and as a result, the visibility is deteriorated.
【0005】[0005]
【発明が解決しようとする課題】そこで、プラスチック
よりなるパネル或いはフィルム上に導電性反射防止膜を
形成した導電性反射防止板を形成し、これをCRTの前
面パネル表面に貼り付けることにより安価にCRT自体
の重量を増やすことなく、CRTの前面パネル表面の反
射の防止や人体等との間の放電の防止を可能にする手法
も提案されている。Therefore, a conductive antireflection plate having a conductive antireflection film formed on a panel or film made of plastic is formed and attached to the front panel surface of a CRT at low cost. There has also been proposed a method of preventing reflection on the front panel surface of the CRT and preventing discharge from the human body without increasing the weight of the CRT itself.
【0006】しかしながら、プラスチックよりなるパネ
ル或いはフィルム上に薄膜を形成する場合、プラスチッ
クの耐熱性を考慮すると比較的低温で薄膜形成を行う必
要があり、導電性反射防止膜の構成材料が限られる等の
不都合が生じる。すなわち、例えば特公平4−1544
3号公報や特公平4−14761号公報には、ガラスよ
りなる透明基板上に導電性反射防止膜としてMgF2 を
含む薄膜を形成して導電性反射防止板とすることが示さ
れているが、上記MgF2 は低温下で成膜するとクラッ
クが生じてしまうことから高温下で成膜する必要があ
り、プラスチックよりなる透明基板上にこれを導電性反
射防止膜の一構成要素として形成することは不可能であ
る。However, when forming a thin film on a panel or film made of plastic, it is necessary to form the thin film at a relatively low temperature in consideration of the heat resistance of the plastic, and the constituent material of the conductive antireflection film is limited. Inconvenience occurs. That is, for example, Japanese Patent Publication 4-1544
Japanese Patent Publication No. 3 and Japanese Patent Publication No. 4-14761 disclose that a thin film containing MgF 2 is formed as a conductive antireflection film on a transparent substrate made of glass to form a conductive antireflection plate. Since MgF 2 causes cracks when it is formed at a low temperature, it is necessary to form it at a high temperature, and it should be formed on a transparent substrate made of plastic as one component of a conductive antireflection film. Is impossible.
【0007】また、酸化インジウムと酸化錫の混合物
(以下、ITOと称する。)よりなる薄膜も高屈折率を
有する導電性の透明薄膜として適用可能であるが、この
ITOはプラスチックとの密着性が悪く、形成される導
電性反射防止板の耐久性の低下の原因となる。さらに、
上記ITO薄膜を最上層とすると十分に低い反射率を得
ることができない等の不都合も生じる。A thin film made of a mixture of indium oxide and tin oxide (hereinafter referred to as ITO) is also applicable as a conductive transparent thin film having a high refractive index, but this ITO has an adhesive property with a plastic. Poorly, it will cause deterioration of durability of the conductive antireflection plate formed. further,
If the above ITO thin film is used as the uppermost layer, disadvantages such as a sufficiently low reflectance cannot be obtained.
【0008】そこで本発明は、従来の実情に鑑みて提案
されたものであり、透明基板への導電性の透明薄膜の密
着性を高め、耐久性が良好で、しかも広範囲の波長領域
にわたって低い反射率を有する導電性反射防止板を提供
し、またこれを用いた映像表示装置も提供することを目
的とする。Therefore, the present invention has been proposed in view of the conventional circumstances, and enhances the adhesion of a conductive transparent thin film to a transparent substrate, has good durability, and has low reflection over a wide wavelength range. It is an object of the present invention to provide a conductive antireflection plate having a high index and an image display device using the same.
【0009】[0009]
【課題を解決するための手段】上記の課題を解決するた
めに本発明の導電性反射防止板は、透明基板上に第1の
透明薄膜,導電性を有する第2の透明薄膜,第3の透明
薄膜,第4の透明薄膜,第5の透明薄膜が順次積層形成
され、第1の透明薄膜の屈折率をn1 、第2の透明薄膜
の屈折率をn2 、第3の透明薄膜の屈折率をn3 、第4
の透明薄膜の屈折率をn4 、第5の透明薄膜の屈折率を
n5 としたときに、n1 <n2 ,n3 <n2 ,2.05
≦n4 ≦2.5,n5 ≦n1 の関係を満たし、第2の透
明薄膜の膜厚が50nm以下であることを特徴とするも
のである。In order to solve the above-mentioned problems, a conductive antireflection plate of the present invention comprises a first transparent thin film, a second transparent thin film having conductivity, and a third transparent thin film on a transparent substrate. A transparent thin film, a fourth transparent thin film, and a fifth transparent thin film are sequentially stacked, and the first transparent thin film has a refractive index of n 1 , the second transparent thin film has a refractive index of n 2 , and the third transparent thin film has a refractive index of n 2 . Refractive index n 3 , fourth
Where n 1 <n 2 , n 3 <n 2 , 2.05, where n 4 is the refractive index of the transparent thin film and n 5 is the refractive index of the fifth transparent thin film.
It is characterized in that the relationship of ≦ n 4 ≦ 2.5 and n 5 ≦ n 1 is satisfied, and the film thickness of the second transparent thin film is 50 nm or less.
【0010】なお、上記第2の透明薄膜の膜厚が50n
mよりも厚いと、十分な反射防止特性を得ることが難し
い。また、本発明の導電性反射防止板においては、第1
の透明薄膜,第3の透明薄膜,第5の透明薄膜が二酸化
珪素よりなることが好ましい。The film thickness of the second transparent thin film is 50 n.
If it is thicker than m, it is difficult to obtain sufficient antireflection characteristics. In the conductive antireflection plate of the present invention, the first
The transparent thin film, the third transparent thin film, and the fifth transparent thin film are preferably made of silicon dioxide.
【0011】さらに本発明の導電性反射防止膜において
は、第2の透明薄膜が酸化インジウムと酸化錫の混合物
よりなることが好ましい。さらにまた、陰極線管の前面
パネルに本発明の導電性反射防止板を貼り付けて映像表
示装置を構成しても良い。Further, in the conductive antireflection film of the present invention, the second transparent thin film is preferably made of a mixture of indium oxide and tin oxide. Furthermore, the image display device may be constructed by attaching the conductive antireflection plate of the present invention to the front panel of the cathode ray tube.
【0012】[0012]
【作用】本発明の導電性反射防止板においては、透明基
板上に第1の透明薄膜,導電性を有する第2の透明薄
膜,第3の透明薄膜,第4の透明薄膜,第5の透明薄膜
が順次積層形成され、第1の透明薄膜の屈折率をn1 、
第2の透明薄膜の屈折率をn2 、第3の透明薄膜の屈折
率をn3 、第4の透明薄膜の屈折率をn4 、第5の透明
薄膜の屈折率をn5 としたときに、n1 <n2 ,n3 <
n2 ,2.05≦n 4 ≦2.5,n5 ≦n1 の関係を満
たすこと、しかも第2の透明薄膜の膜厚が50nm以下
であることから、十分な反射防止特性を示す。また、第
4の透明薄膜の屈折率が高いため、広範囲の波長領域に
わたって低い反射率を示す。さらに、透明基板と導電性
の透明薄膜となる第2の透明薄膜との間に低屈折率で密
着性に優れた第1の透明薄膜が配されていることから、
上記第2の透明薄膜の基板に対する密着性が良好とな
る。In the conductive antireflection plate of the present invention, the transparent substrate
First transparent thin film on the plate, second transparent thin film having conductivity
Film, third transparent thin film, fourth transparent thin film, fifth transparent thin film
Are sequentially stacked, and the refractive index of the first transparent thin film is n.1 ,
Let the refractive index of the second transparent thin film be n2 , Refraction of the third transparent thin film
Rate n3 , The refractive index of the fourth transparent thin film is nFour , Fifth transparent
The refractive index of the thin film is nFive And then n1 <N2 , N3 <
n2 , 2.05 ≦ n Four ≤2.5, nFive ≤n1 Full of relationships
In addition, the thickness of the second transparent thin film is 50 nm or less
Therefore, it exhibits a sufficient antireflection property. Also,
Since the transparent thin film of 4 has a high refractive index, it can cover a wide range of wavelengths.
It exhibits low reflectance over time. Furthermore, transparent substrate and conductivity
The second transparent thin film, which will be the transparent thin film of
Since the first transparent thin film having excellent wearability is arranged,
Adhesion of the second transparent thin film to the substrate is good.
It
【0013】また、上記本発明の導電性反射防止板を陰
極線管の前面パネルに貼り付けて映像表示装置を構成す
れば、導電性反射防止板の第2の透明薄膜の膜厚が確保
されていることから帯電防止効果及び電磁遮断効果を十
分に有する映像表示装置が構成される。Further, when the conductive antireflection plate of the present invention is attached to the front panel of the cathode ray tube to constitute the image display device, the film thickness of the second transparent thin film of the conductive antireflection plate is secured. Therefore, an image display device having a sufficient antistatic effect and electromagnetic shielding effect is constructed.
【0014】[0014]
【実施例】以下、本発明の具体的な実施例について実験
結果に基づいて説明する。すなわち、様々な条件下で図
1に示すような透明基板1上に第1の透明薄膜2,導電
性を有する第2の透明薄膜3,第3の透明薄膜4,第4
の透明薄膜5,第5の透明薄膜6を順次積層形成して導
電性反射防止板を形成し、これら導電性反射防止板の反
射特性を調査した。EXAMPLES Specific examples of the present invention will be described below based on experimental results. That is, under various conditions, a first transparent thin film 2, a conductive second transparent thin film 3, a third transparent thin film 4, a fourth transparent thin film 4, a fourth transparent thin film 4, and a fourth transparent thin film 4 on a transparent substrate 1 as shown in FIG.
The transparent thin film 5 and the fifth transparent thin film 6 were sequentially laminated to form a conductive antireflection plate, and the reflection characteristics of these conductive antireflection plates were investigated.
【0015】先ず、最初にポリエチレンテレフタレート
(以下、PETと称する。)よりなるフィルム状の透明
基板1上に第1の透明薄膜2として膜厚20nmの酸化
アルミニウム(以下、Al2 O3 と称する。)よりなる
薄膜を形成し、第2の透明薄膜3として膜厚27nmの
ITOよりなる薄膜を形成し、第3の透明薄膜4として
膜厚20nmのSiO2 よりなる薄膜を形成し、第4の
透明薄膜5として膜厚103nmの二酸化チタン(以
下、TiO2 と称する。)よりなる薄膜を形成し、第5
の透明薄膜6として膜厚88nmの二酸化珪素(以下、
SiO2 と称する。)よりなる薄膜を形成して導電性反
射防止板サンプル1を製造した。First, a 20-nm-thick aluminum oxide (hereinafter referred to as Al 2 O 3 ) film is formed as a first transparent thin film 2 on a film-like transparent substrate 1 made of polyethylene terephthalate (hereinafter referred to as PET). ), A thin film made of ITO having a thickness of 27 nm is formed as the second transparent thin film 3, and a thin film made of SiO 2 having a thickness of 20 nm is formed as the third transparent thin film 4. As the transparent thin film 5, a thin film made of titanium dioxide (hereinafter referred to as TiO 2 ) having a film thickness of 103 nm is formed.
As a transparent thin film 6 of silicon dioxide having a film thickness of 88 nm (hereinafter,
It is called SiO 2 . Was formed into a conductive antireflection plate sample 1.
【0016】そしてこのとき、第1の透明薄膜2の屈折
率をn1 、第2の透明薄膜3の屈折率をn2 、第3の透
明薄膜4の屈折率をn3 、第4の透明薄膜5の屈折率を
n4、第5の透明薄膜6の屈折率をn5 とすると、n1
=1.62、n2 =2.0、n3 =1.45、n4 =
2.4、n5 =1.45となる。At this time, the refractive index of the first transparent thin film 2 is n 1 , the refractive index of the second transparent thin film 3 is n 2 , the refractive index of the third transparent thin film 4 is n 3 , and the fourth transparent thin film. If the refractive index of the thin film 5 is n 4 and the refractive index of the fifth transparent thin film 6 is n 5 , then n 1
= 1.62, n 2 = 2.0, n 3 = 1.45, n 4 =
2.4, and n 5 = 1.45.
【0017】次に、上記導電性反射防止板サンプル1と
同様にPETよりなる透明基板1上に第1の透明薄膜2
として膜厚76nmのSiO2 薄膜を形成し、第2の透
明薄膜3として膜厚24nmのITO薄膜を形成し、第
3の透明薄膜4として膜厚34nmのSiO2 薄膜を形
成し、第4の透明薄膜5として膜厚104nmのTiO
2 薄膜を形成し、第5の透明薄膜6として膜厚86nm
のSiO2 薄膜を形成して導電性反射防止板サンプル2
を製造した。Next, as in the case of the conductive antireflection plate sample 1, the first transparent thin film 2 is formed on the transparent substrate 1 made of PET.
As to form a SiO 2 film having a film thickness of 76 nm, a second transparent thin film 3 to form an ITO thin film having a film thickness of 24 nm, a SiO 2 film having a film thickness of 34nm was formed as a third transparent thin film 4, the fourth TiO with a thickness of 104 nm as the transparent thin film 5
2 thin films are formed, and the film thickness is 86 nm as the fifth transparent thin film 6.
Conductive antireflection plate sample 2 by forming a SiO 2 thin film of
Was manufactured.
【0018】そしてこのとき、第1の透明薄膜2の屈折
率をn1 、第2の透明薄膜3の屈折率をn2 、第3の透
明薄膜4の屈折率をn3 、第4の透明薄膜5の屈折率を
n4、第5の透明薄膜6の屈折率をn5 とすると、n1
=1.45、n2 =2.0、n3 =1.45、n4 =
2.0、n5 =1.45となる。At this time, the refractive index of the first transparent thin film 2 is n 1 , the refractive index of the second transparent thin film 3 is n 2 , the refractive index of the third transparent thin film 4 is n 3 , and the fourth transparent thin film. If the refractive index of the thin film 5 is n 4 and the refractive index of the fifth transparent thin film 6 is n 5 , then n 1
= 1.45, n 2 = 2.0, n 3 = 1.45, n 4 =
2.0, n 5 = 1.45.
【0019】次に、上記導電性反射防止板サンプル1と
同様にPETよりなる透明基板1上に第1の透明薄膜2
として膜厚61nmのSiO2 薄膜を形成し、第2の透
明薄膜3として膜厚20nmのITO薄膜を形成し、第
3の透明薄膜4として膜厚44nmのAl2 O3 薄膜を
形成し、第4の透明薄膜5として膜厚103nmのTi
O2 薄膜を形成し、第5の透明薄膜6として膜厚87n
mのSiO2 薄膜を形成して導電性反射防止板サンプル
3を製造した。Next, as in the case of the conductive antireflection plate sample 1, the first transparent thin film 2 is formed on the transparent substrate 1 made of PET.
As to form a SiO 2 film having a film thickness of 61 nm, a second transparent thin film 3 to form an ITO thin film having a film thickness of 20 nm, the Al 2 O 3 thin film having a film thickness of 44nm was formed as a third transparent thin film 4, the 4 as a transparent thin film 5 having a thickness of 103 nm Ti
An O 2 thin film is formed to form a fifth transparent thin film 6 having a film thickness of 87 n.
A conductive antireflection plate sample 3 was manufactured by forming a SiO 2 thin film of m.
【0020】そしてこのとき、第1の透明薄膜2の屈折
率をn1 、第2の透明薄膜3の屈折率をn2 、第3の透
明薄膜4の屈折率をn3 、第4の透明薄膜5の屈折率を
n4、第5の透明薄膜6の屈折率をn5 とすると、n1
=1.45、n2 =2.0、n3 =1.62、n4 =
2.4、n5 =1.45となる。At this time, the refractive index of the first transparent thin film 2 is n 1 , the refractive index of the second transparent thin film 3 is n 2 , the refractive index of the third transparent thin film 4 is n 3 , and the fourth transparent thin film. If the refractive index of the thin film 5 is n 4 and the refractive index of the fifth transparent thin film 6 is n 5 , then n 1
= 1.45, n 2 = 2.0, n 3 = 1.62, n 4 =
2.4, and n 5 = 1.45.
【0021】なお、上記導電性反射防止板サンプル1〜
3の製造にあたっては、各薄膜を各薄膜構成材料をスパ
ッタリングして成膜するものとし、上記材料であれば低
温下での成膜が可能である。また、各薄膜は上記スパッ
タリング法の他、通常の蒸着法やイオンプレーティング
法により成膜可能である。さらに、上記導電性反射防止
板サンプル1〜3においては、透明基板1としてPET
よりなるフィルムを使用するものとしたが、これに限定
されるものではなく、アクリル系樹脂,セルロース系樹
脂等が例示される。The conductive antireflection plate samples 1 to
In the production of No. 3, each thin film is formed by sputtering each thin film constituent material, and the above materials can be formed at a low temperature. Further, each thin film can be formed by a usual vapor deposition method or an ion plating method in addition to the above-mentioned sputtering method. Furthermore, in the above-mentioned conductive antireflection plate samples 1 to 3, PET was used as the transparent substrate 1.
However, the film is not limited to this, and an acrylic resin, a cellulose resin, or the like is exemplified.
【0022】このとき、導電性反射防止板サンプル1〜
3においては、第1の透明薄膜2の屈折率をn1 、第2
の透明薄膜3の屈折率をn2 、第3の透明薄膜4の屈折
率をn3 、第4の透明薄膜5の屈折率をn4 、第5の透
明薄膜6の屈折率をn5 としたときに、n1 <n2 ,n
3 <n2 ,2.05≦n4 ≦2.5,n5 ≦n1 の関係
を満たすこととなる。At this time, the conductive antireflection plate samples 1 to
3, the refractive index of the first transparent thin film 2 is n 1 ,
The refractive index of the transparent thin film 3 is n 2 , the refractive index of the third transparent thin film 4 is n 3 , the refractive index of the fourth transparent thin film 5 is n 4 , and the refractive index of the fifth transparent thin film 6 is n 5 . Then n 1 <n 2 , n
The relationship of 3 <n 2 , 2.05 ≤ n 4 ≤ 2.5, n 5 ≤ n 1 is satisfied.
【0023】また、比較のために従来通りガラスよりな
る透明基板上に複数の薄膜を形成したものを用意した。
なお、上記薄膜としては等価膜を用いて高屈折率と低屈
折率の2種類の材料よりなる薄膜を用い、高屈折の材料
としてTiO2 を使用し、低屈折の材料としてSiO2
を使用した。すなわち、ガラスよりなる透明基板上に第
1の透明薄膜として膜厚40nmのSiO2 薄膜を形成
し、第2の透明薄膜として膜厚12nmのTiO2 薄膜
を形成し、第3の透明薄膜として膜厚40nmのSiO
2 薄膜を形成し、第4の透明薄膜として膜厚114nm
のTiO2 薄膜を形成し、第5の透明薄膜として膜厚8
9nmのSiO2 薄膜を形成して導電性反射防止板サン
プル4を形成した。For comparison, a conventional transparent substrate made of glass and having a plurality of thin films formed thereon was prepared.
Incidentally, a thin film made of two materials of high and low refractive index with an equivalent film as the thin film, using a TiO 2 as a high refractive material, SiO 2 as a low refractive index material
It was used. That is, on a transparent substrate made of glass, a SiO 2 thin film having a thickness of 40 nm is formed as a first transparent thin film, a TiO 2 thin film having a thickness of 12 nm is formed as a second transparent thin film, and a film is formed as a third transparent thin film. 40nm thick SiO
2 thin films are formed, and the film thickness is 114 nm as the fourth transparent thin film.
TiO 2 thin film is formed as a fifth transparent thin film with a film thickness of 8
A 9 nm SiO 2 thin film was formed to form a conductive antireflection plate sample 4.
【0024】なお、上記導電性反射防止板サンプル4の
製造にあたっても、各薄膜を各薄膜構成材料をスパッタ
リングして成膜するものとした。次に、上記導電性反射
防止板サンプル1〜4について分光反射率を調査した。
なお、光源としてはハロゲンランプを使用し、空気中か
ら透明基板側に入射角を5degとして入射させた。こ
のとき、透明基板の影響を受けないよう、裏面には砂か
け処理を施した。導電性反射防止板サンプル1〜4にお
ける分光反射率の結果を図2〜図5にそれぞれ示す。Also in the production of the conductive antireflection plate sample 4, each thin film is formed by sputtering each thin film constituent material. Next, the spectral reflectance of the conductive antireflection plate samples 1 to 4 was investigated.
A halogen lamp was used as a light source, and the light was incident on the transparent substrate side from the air with an incident angle of 5 deg. At this time, the back surface was sanded so as not to be affected by the transparent substrate. The results of the spectral reflectance of the conductive antireflection plate samples 1 to 4 are shown in FIGS. 2 to 5, respectively.
【0025】図2〜図5の結果から、導電性反射防止板
サンプル1〜3の分光反射率は従来より使用されている
導電性反射防止板サンプル4と同等の特性を有し、十分
な反射防止性能を有することが確認された。また、図2
〜図4の結果から、導電性反射防止板サンプル1〜3に
おいては、広範囲の波長領域にわたって低い反射率を示
し、しかも上記波長領域が可視領域の殆どを含んでいる
ため、反射防止効果が非常に高いことも確認された。こ
れは、第1の透明薄膜2の屈折率をn1 、第2の透明薄
膜3の屈折率をn2 、第3の透明薄膜4の屈折率をn
3 、第4の透明薄膜5の屈折率をn4 、第5の透明薄膜
6の屈折率をn5 としたときに、n1 <n2 ,n3 <n
2 ,2.05≦n4 ≦2.5,n5 ≦n1 の関係を満た
すこと、しかも第4の透明薄膜5の屈折率が低く、第2
の透明薄膜3の膜厚が50nm以下であるためと思われ
る。From the results of FIGS. 2 to 5, the spectral reflectances of the conductive antireflection plate samples 1 to 3 have the same characteristics as those of the conductive antireflection plate sample 4 which has been conventionally used, and the sufficient reflectance is obtained. It was confirmed to have preventive performance. Also, FIG.
From the results of FIG. 4, the conductive antireflection plate samples 1 to 3 show low reflectance over a wide range of wavelength regions, and the wavelength region includes most of the visible region, so that the antireflection effect is extremely high. It was also confirmed to be high. This is because the refractive index of the first transparent thin film 2 is n 1 , the refractive index of the second transparent thin film 3 is n 2 , and the refractive index of the third transparent thin film 4 is n 1.
3, refractive index n 4 of the fourth transparent thin film 5, when the refractive index of the fifth transparent thin film 6 was n 5, n 1 <n 2 , n 3 <n
2 , 2.05 ≦ n 4 ≦ 2.5, n 5 ≦ n 1 , and the refractive index of the fourth transparent thin film 5 is low.
It is considered that the thickness of the transparent thin film 3 is 50 nm or less.
【0026】さらに、導電性防止板サンプル1〜3にお
いては、透明基板1と導電性の透明薄膜となる第2の透
明薄膜3との間に低屈折率で密着性に優れた第1の透明
薄膜2が配されていることから、上記第2の透明薄膜3
の透明基板に対する密着性が良好となり、耐久性も良好
となる。Further, in the samples 1 to 3 of the electroconductive prevention plates, the first transparent material having a low refractive index and excellent adhesion was provided between the transparent substrate 1 and the second transparent thin film 3 serving as a conductive transparent thin film. Since the thin film 2 is arranged, the second transparent thin film 3
Adhesion to the transparent substrate becomes good, and durability becomes good.
【0027】さらにまた、上記導電性反射防止板サンプ
ル1〜3においては第2の透明薄膜3の膜厚が確保され
ているため、十分な帯電防止効果を示し、上記のような
導電性反射防止板サンプル1〜3をCRTの前面パネル
表面に貼り付けた映像表示装置においては、CRTの前
面パネルが比較的静電荷が発生し易いにもかかわらず、
導電性膜をアースに落とすことで、帯電防止効果及び電
磁遮断効果が十分に得られる。Furthermore, in the conductive antireflection plate samples 1 to 3, the film thickness of the second transparent thin film 3 is ensured, so that a sufficient antistatic effect is exhibited, and the conductive antireflection film as described above is obtained. In the image display device in which the plate samples 1 to 3 are attached to the surface of the front panel of the CRT, although the front panel of the CRT is relatively easy to generate electrostatic charge,
By dropping the conductive film to the ground, a sufficient antistatic effect and electromagnetic shielding effect can be obtained.
【0028】[0028]
【発明の効果】以上の説明からも明らかなように、本発
明の導電性反射防止板においては、透明基板上に第1の
透明薄膜,導電性を有する第2の透明薄膜,第3の透明
薄膜,第4の透明薄膜,第5の透明薄膜が順次積層形成
され、第1の透明薄膜の屈折率をn1 、第2の透明薄膜
の屈折率をn2 、第3の透明薄膜の屈折率をn3 、第4
の透明薄膜の屈折率をn4 、第5の透明薄膜の屈折率を
n5 としたときに、n1<n2 ,n3 <n2 ,2.05
≦n4 ≦2.5,n5 ≦n1 の関係を満たすこと、しか
も第2の透明薄膜の膜厚が50nm以下であることか
ら、十分な反射防止特性を示す。また、第4の透明薄膜
の屈折率が高いため、広範囲の波長領域にわたって低い
反射率を示す。さらに、透明基板と導電性の透明薄膜と
なる第2の透明薄膜との間に低屈折率で密着性に優れた
第1の透明薄膜が配されていることから、上記第2の透
明薄膜の基板に対する密着性が良好となり、耐久性も良
好となる。As is apparent from the above description, in the conductive antireflection plate of the present invention, the first transparent thin film, the conductive second transparent thin film, and the third transparent thin film are formed on the transparent substrate. A thin film, a fourth transparent thin film, and a fifth transparent thin film are sequentially stacked, and the refractive index of the first transparent thin film is n 1 , the refractive index of the second transparent thin film is n 2 , and the third transparent thin film is refracted. Rate n 3 , fourth
Where n 1 <n 2 , n 3 <n 2 , 2.05, where n 4 is the refractive index of the transparent thin film and n 5 is the refractive index of the fifth transparent thin film.
Satisfying the antireflection property because the relationship of ≦ n 4 ≦ 2.5 and n 5 ≦ n 1 is satisfied and the film thickness of the second transparent thin film is 50 nm or less. Moreover, since the fourth transparent thin film has a high refractive index, it exhibits a low reflectance over a wide wavelength range. Furthermore, since the first transparent thin film having a low refractive index and excellent adhesiveness is arranged between the transparent substrate and the second transparent thin film which is a conductive transparent thin film, Adhesion to the substrate is good, and durability is also good.
【0029】また、上記本発明の導電性反射防止板を陰
極線管の前面パネルに貼り付けて映像表示装置を構成す
れば、導電性反射防止板の第2の透明薄膜の膜厚が確保
されていることから帯電防止効果及び電磁遮断効果を十
分に有する映像表示装置が構成される。When the conductive antireflection plate of the present invention is attached to the front panel of the cathode ray tube to form an image display device, the thickness of the second transparent thin film of the conductive antireflection plate is secured. Therefore, an image display device having a sufficient antistatic effect and electromagnetic shielding effect is constructed.
【図1】導電性反射防止板を示す断面図である。FIG. 1 is a cross-sectional view showing a conductive antireflection plate.
【図2】導電性反射防止板サンプル1における分光反射
率を示す特性図である。FIG. 2 is a characteristic diagram showing a spectral reflectance of a conductive antireflection plate sample 1.
【図3】導電性反射防止板サンプル2における分光反射
率を示す特性図である。FIG. 3 is a characteristic diagram showing a spectral reflectance of a conductive antireflection plate sample 2.
【図4】導電性反射防止板サンプル3における分光反射
率を示す特性図である。FIG. 4 is a characteristic diagram showing a spectral reflectance of a conductive antireflection plate sample 3.
【図5】導電性反射防止板サンプル4における分光反射
率を示す特性図である。5 is a characteristic diagram showing a spectral reflectance of a conductive antireflection plate sample 4. FIG.
1 透明基板 2 第1の透明薄膜 3 第2の透明薄膜 4 第3の透明薄膜 5 第4の透明薄膜 6 第5の透明薄膜 DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 1st transparent thin film 3 2nd transparent thin film 4 3rd transparent thin film 5 4th transparent thin film 6 5th transparent thin film
Claims (4)
有する第2の透明薄膜,第3の透明薄膜,第4の透明薄
膜,第5の透明薄膜が順次積層形成され、 第1の透明薄膜の屈折率をn1 、第2の透明薄膜の屈折
率をn2 、第3の透明薄膜の屈折率をn3 、第4の透明
薄膜の屈折率をn4 、第5の透明薄膜の屈折率をn5 と
したときに、n1 <n2 ,n3 <n2 ,2.05≦n4
≦2.5,n5≦n1 の関係を満たし、第2の透明薄膜
の膜厚が50nm以下である導電性反射防止板。1. A first transparent thin film, a second transparent thin film having conductivity, a third transparent thin film, a fourth transparent thin film, and a fifth transparent thin film are sequentially laminated on a transparent substrate to form a first transparent thin film. The transparent thin film has a refractive index n 1 , the second transparent thin film has a refractive index n 2 , the third transparent thin film has a refractive index n 3 , the fourth transparent thin film has a refractive index n 4 , and the fifth transparent When the refractive index of the thin film is n 5 , n 1 <n 2 , n 3 <n 2 , 2.05 ≦ n 4
A conductive antireflection plate satisfying the relations of ≦ 2.5 and n 5 ≦ n 1 and having a film thickness of the second transparent thin film of 50 nm or less.
の透明薄膜が二酸化珪素よりなることを特徴とする請求
項1記載の導電性反射防止板。2. A first transparent thin film, a third transparent thin film, and a fifth transparent thin film.
2. The conductive antireflection plate according to claim 1, wherein the transparent thin film is made of silicon dioxide.
錫の混合物よりなることを特徴とする請求項1記載の導
電性反射防止板。3. The conductive antireflection plate according to claim 1, wherein the second transparent thin film is made of a mixture of indium oxide and tin oxide.
導電性反射防止板を貼り付けてなる映像表示装置。4. An image display device comprising the conductive antireflection plate according to claim 1 attached to a front panel of a cathode ray tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7134422A JPH08327801A (en) | 1995-05-31 | 1995-05-31 | Conductive antireflection plate and image display device using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7134422A JPH08327801A (en) | 1995-05-31 | 1995-05-31 | Conductive antireflection plate and image display device using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08327801A true JPH08327801A (en) | 1996-12-13 |
Family
ID=15128020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7134422A Pending JPH08327801A (en) | 1995-05-31 | 1995-05-31 | Conductive antireflection plate and image display device using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08327801A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10187056A (en) * | 1996-12-19 | 1998-07-14 | Sony Corp | Filter for display device, display device, and front surface plate for display device |
JP2000039502A (en) * | 1998-07-23 | 2000-02-08 | Konica Corp | Electromagnetic wave decreasing antireflection film and optical member having this antireflection film |
KR101334725B1 (en) * | 2012-05-14 | 2013-12-02 | 한화엘앤씨 주식회사 | Transparent conductivity film for touch screen panel by roll to roll chemical vapor deposition and method for manufacturing thereof |
-
1995
- 1995-05-31 JP JP7134422A patent/JPH08327801A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10187056A (en) * | 1996-12-19 | 1998-07-14 | Sony Corp | Filter for display device, display device, and front surface plate for display device |
JP2000039502A (en) * | 1998-07-23 | 2000-02-08 | Konica Corp | Electromagnetic wave decreasing antireflection film and optical member having this antireflection film |
KR101334725B1 (en) * | 2012-05-14 | 2013-12-02 | 한화엘앤씨 주식회사 | Transparent conductivity film for touch screen panel by roll to roll chemical vapor deposition and method for manufacturing thereof |
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