JPH08325758A - Device and method for processing curved surface - Google Patents

Device and method for processing curved surface

Info

Publication number
JPH08325758A
JPH08325758A JP13524695A JP13524695A JPH08325758A JP H08325758 A JPH08325758 A JP H08325758A JP 13524695 A JP13524695 A JP 13524695A JP 13524695 A JP13524695 A JP 13524695A JP H08325758 A JPH08325758 A JP H08325758A
Authority
JP
Japan
Prior art keywords
processing
workpiece
processing head
work
curved surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13524695A
Other languages
Japanese (ja)
Inventor
Yoshinori Miyano
好徳 宮野
Hideo Saito
日出夫 齊藤
Hiromi Nishihara
浩巳 西原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP13524695A priority Critical patent/JPH08325758A/en
Publication of JPH08325758A publication Critical patent/JPH08325758A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To finish the curved surface of a surface to be processed without the occurrence of flaws and distortions by directing a processing head facing the work having a curved surface shape perpendicularly toward the surface to be processed and subjecting the surface to plasma etching while changing the relative positions. CONSTITUTION: The work 1 having the curved surface shape is placed on a rotary table 2 within a reaction vessel 7 and a reactive gas contg. active particles formed in a plasma forming chamber 4 is supplied from the processing head 3 facing the work to the work, by which the plasma etching of the work 1 is executed. At this time, the processing head 3 is directed perpendicularly to the surface to be processed and is moved in this state relatively while the work 1 is kept rotated. The control of the processing head 3 is executed by two-dimensionally or three-dimensionally changing the relative positions of the processing head 3 via a moving and oscillating device 5 having a controller 8 and oscillating the head, thereby directing the head perpendicularly to the surface to be worked. As a result, the reactive gas formed as plasma is made to flow in the tangent direction of the surface to be processed of the curved surface shape of the work, by which the surface to be processed is finished to the desired shape accuracy and surface roughness.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は球面あるいは非球面形状
をもつレンズ、金型などの曲面の形状創成、表面仕上げ
加工装置および方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for forming a surface of a curved surface such as a lens having a spherical surface or an aspherical surface, a metal mold, or the like.

【0002】[0002]

【従来の技術】従来、曲面創成は切削・研削・研磨など
の機械的作用、放電加工などの電気的作用による除去加
工を行ってなされている。一方、プラズマエッチングな
どの化学的除去加工では、被加工物表面において反応ガ
ス中の活性粒子と被加工物との間で化学反応が起こり、
反応生成物が除去されるので、加工面に損傷を与えな
い。また、プラズマを利用した加工において問題とされ
ていた空間制御性の改善については、特開平1−125
829号公報および第43回周波数制御シンポジュム
(43rd Annual Symposium on Frequency Control):米国
電気通信学会(1989)発行の623頁に開示の公知
例がある。
2. Description of the Related Art Conventionally, curved surface creation has been performed by mechanical processing such as cutting, grinding and polishing, and removal processing by electrical processing such as electrical discharge machining. On the other hand, in chemical removal processing such as plasma etching, a chemical reaction occurs between the active particles in the reaction gas and the workpiece on the surface of the workpiece,
Since the reaction products are removed, the machined surface is not damaged. Further, regarding the improvement of the spatial controllability, which has been a problem in the processing using plasma, Japanese Patent Laid-Open No. 125
829 and 43rd Annual Symposium on Frequency Control: 623, published by The Institute of Electrical Communication (1989).

【0003】[0003]

【発明が解決しようとする課題】しかし、従来の切削・
研削・研磨などの機械的除去加工は切削バイトや研磨材
と被加工物との間で生じる物理的作用により被加工物を
変形・破壊させるため、加工面に結晶破壊や残留歪が生
じる。
[Problems to be Solved by the Invention]
Mechanical removal processing such as grinding and polishing deforms and destroys the work piece due to the physical action that occurs between the cutting tool or the abrasive and the work piece, resulting in crystal fracture and residual strain on the work surface.

【0004】また、放電加工は電気スパークの熱により
被加工物を溶融、除去するため加工面に熱変形層などが
生ずる。このため、これらの加工では加工面の物性が変
化し、一般的に材料特性は劣化してしまう。
In electric discharge machining, the work is melted and removed by the heat of the electric spark, so that a heat deformable layer or the like is formed on the machined surface. Therefore, these processes change the physical properties of the processed surface, and generally deteriorate the material properties.

【0005】また、プラズマエッチングの場合にも、プ
ラズマ生成時の輻射熱や高速荷電粒子が加工面に影響を
与える可能性がある。本発明は、加工歪や加工による損
傷を生じない2または3次元曲面をもつ被加工面の仕上
げ加工装置および方法を提供することを目的とする。
Also in the case of plasma etching, radiant heat at the time of plasma generation and high-speed charged particles may affect the processed surface. It is an object of the present invention to provide an apparatus and method for finishing a work surface having a two-dimensional or three-dimensional curved surface that does not cause work strain or damage due to work.

【0006】[0006]

【課題を解決するための手段】本発明の曲面加工装置
は、プラズマエッチングを利用した加工装置において、
曲面形状の被加工物に対向した加工ヘッドと、この加工
ヘッドに活性粒子を含む反応ガスを供給するプラズマ生
成室と、前記被加工物を搭載するテーブルと、前記被加
工物と加工ヘッドとの相対位置を変更する2または3次
元移動機構と前記加工ヘッドを被加工物の被加工面に垂
直に向ける揺動機構とを有する移動・揺動装置と、この
移動・揺動装置を制御する制御装置と、少なくとも前記
加工ヘッドおよび被加工物を収容する反応容器とからな
るものである。
The curved surface processing apparatus of the present invention is a processing apparatus utilizing plasma etching,
A machining head facing a curved workpiece, a plasma generation chamber for supplying a reactive gas containing active particles to the machining head, a table on which the workpiece is mounted, the workpiece and the machining head. A moving / oscillating device having a two- or three-dimensional moving mechanism for changing the relative position and an oscillating mechanism for orienting the machining head perpendicularly to the surface of the workpiece to be machined, and a control for controlling this moving / oscillating device It comprises an apparatus and a reaction container which houses at least the processing head and a workpiece.

【0007】また、曲面加工方法は、反応容器内で、曲
面形状の被加工物に対し、活性粒子を含む反応ガスを流
出する加工ヘッドを被加工面に垂直に向けた状態で、被
加工物の加工曲面に沿って移動させ、プラズマエッチン
グを利用した加工を行うことを特徴とするものである。
Further, the curved surface processing method is a method in which a processing head for flowing a reaction gas containing active particles is directed perpendicularly to a surface to be processed in a reaction vessel in the reaction vessel. It is characterized in that it is moved along the processing curved surface and the processing utilizing plasma etching is performed.

【0008】[0008]

【作用】上記の構成を用いて、2または3次元曲面形状
を有する加工対象部分の表面の接線方向にプラスマ化し
た反応ガスを流す。このことにより、被加工物の形状精
度と表面粗さの向上に適した反応ガスの流れを得ること
ができる。
With the above-described structure, the reaction gas which is made into a plasma is flowed in the tangential direction of the surface of the processing target portion having the two-dimensional or three-dimensional curved surface shape. This makes it possible to obtain a flow of the reaction gas suitable for improving the shape accuracy and surface roughness of the workpiece.

【0009】また、加工は化学的作用によるため加工歪
や加工面の損傷を最小限とすることができる。さらに加
工ヘッドと被加工物の間のガス流れにより反応後のガス
が加工対象部分から速やかに排気されるため反応生成物
による加工面の汚染を防止できる。
Further, since processing is performed by a chemical action, processing strain and damage to the processed surface can be minimized. Further, since the gas after the reaction is quickly exhausted from the portion to be processed by the gas flow between the processing head and the object to be processed, it is possible to prevent the processed surface from being contaminated by the reaction product.

【0010】[0010]

【実施例】図1は本発明の一実施例を示す全体構成図で
ある。図1において、1は被加工物、2は被加工物1を
搭載するテーブルとしての回転テーブル、3は被加工物
1に反応ガスを供給するための加工ヘッド、4はプラズ
マを生成させ、反応ガスを供給するプラズマ生成室、4
1は加工ヘッド3とプラズマ生成室4を接続する接続
管、5は被加工物1と加工ヘッド3との相対位置を変更
する移動・揺動装置、7は反応容器、71は排気口を示
す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an overall configuration diagram showing an embodiment of the present invention. In FIG. 1, 1 is a work piece, 2 is a rotary table as a table on which the work piece 1 is mounted, 3 is a processing head for supplying a reaction gas to the work piece 1, 4 is plasma, and a reaction is performed. Plasma generation chamber for supplying gas, 4
Reference numeral 1 is a connecting pipe connecting the processing head 3 and the plasma generation chamber 4, 5 is a moving / swinging device for changing the relative position between the workpiece 1 and the processing head 3, 7 is a reaction container, and 71 is an exhaust port. .

【0011】次に、以上の構成にて軸対称曲面を加工す
る方法について述べる。まず、回転テーブル2を回転さ
せると共に、加工ヘッド3を移動・揺動装置5により、
所望の軸対称曲面に沿って移動させる。
Next, a method of processing an axisymmetric curved surface with the above configuration will be described. First, the rotary table 2 is rotated, and the processing head 3 is moved / swinged by the moving / swinging device 5.
Move along a desired axisymmetric curved surface.

【0012】図2は、この移動時の被加工物1と加工ヘ
ッド3の位置関係を示したものである。図中、Iは回転
テーブル2の中心軸、A点は回転テーブル2の被加工物
設置面とI軸の交点、B点は加工面上の一点、直線IIは
B点における加工面の法線を表す。このとき、加工面形
状は、B点のI軸からの距離x、回転テーブル上面から
の距離z、および軸Iと軸IIのなす角度θによって規定
できる。
FIG. 2 shows the positional relationship between the workpiece 1 and the machining head 3 during this movement. In the figure, I is the central axis of the rotary table 2, point A is the intersection of the workpiece mounting surface of the rotary table 2 and the I axis, point B is one point on the machined surface, and straight line II is the normal to the machined surface at point B. Represents At this time, the processed surface shape can be defined by the distance x from the I axis of the point B, the distance z from the upper surface of the turntable, and the angle θ formed by the axes I and II.

【0013】一方、被加工物1をその対称軸が軸Iと一
致するように設置し、また移動・揺動装置5は加工ヘッ
ド3を軸Iを含む平面内を移動・揺動させるように設定
する。ここで、制御装置8によって加工ヘッド3を上記
(x,z,θ)によって決まる位置・姿勢となるように
移動・揺動装置5を制御し、かつ被加工物1を回転させ
ることにより所望の軸対称曲面に沿って加工ヘッド3を
移動させることができる。
On the other hand, the workpiece 1 is installed so that its axis of symmetry coincides with the axis I, and the moving / swinging device 5 moves and swings the working head 3 in a plane including the axis I. Set. Here, the controller 8 controls the moving / swinging device 5 so that the machining head 3 is in the position / orientation determined by the above (x, z, θ), and the workpiece 1 is rotated to a desired position. The processing head 3 can be moved along the axisymmetric curved surface.

【0014】次に、この加工ヘッド3の移動中にプラス
マ生成室4にて生成した活性粒子を含む反応ガスを加工
ヘッド3から流出させる。このとき、反応ガスは、被加
工物1と加工ヘッド3の間隙を被加工物表面の接線方向
に流れ、この間隙において加工を行う。
Next, during the movement of the processing head 3, the reaction gas containing active particles generated in the plasma generation chamber 4 is caused to flow out from the processing head 3. At this time, the reaction gas flows through the gap between the workpiece 1 and the machining head 3 in the tangential direction of the surface of the workpiece, and the machining is performed in this gap.

【0015】以上の構成、方法に基づく曲面加工装置に
より、反応ガスが被加工面に対して平行に、かつ一様な
放射状の流れとなるため、曲面創成に適したものとな
る。したがって、被加工物の形状精度および表面粗さを
向上させることができる。また、加工は化学的作用によ
り進行するので、加工面の損傷や加工歪の残留がなく材
料特性の劣化を生じることがない。さらに、反応生成ガ
スの流動にともない被加工物1と加工ヘッド3との間の
加工進行部から速やかに排気されるため反応生成物によ
る汚染や加工ムラを防止できると同時に、加工効率を高
めることができる。
With the curved surface processing apparatus based on the above configuration and method, the reaction gas becomes a uniform radial flow parallel to the surface to be processed, which is suitable for curved surface creation. Therefore, the shape accuracy and surface roughness of the workpiece can be improved. Further, since the processing progresses by a chemical action, there is no damage on the processed surface or residual processing strain, and no deterioration of material properties occurs. Further, as the reaction product gas flows, it is quickly exhausted from the processing progress portion between the workpiece 1 and the processing head 3, so that contamination and uneven processing due to the reaction product can be prevented, and at the same time, the processing efficiency can be improved. You can

【0016】なお、図1において、プラズマ生成室5は
反応容器7の外側に配置しているが、これは反応容器7
の内部に配置しても構わない。また、図2に示したよう
に、被加工物1と加工ヘッド3との相対位置・姿勢は揺
動1軸を含む最低3軸の制御が必要である。
In FIG. 1, the plasma generation chamber 5 is arranged outside the reaction container 7, but this is not shown.
It may be placed inside. Further, as shown in FIG. 2, the relative position / posture between the workpiece 1 and the processing head 3 needs to be controlled at least three axes including one axis of swing.

【0017】図1では、この3軸の移動・揺動すべてを
加工ヘッド3に作用させる移動・揺動装置を用いた構成
としているが、一部の制御軸を被加工物1に作用させる
ようにしてもよい。また、相対移動の効果を高めるため
に軸数を4軸以上としてもよい。
In FIG. 1, a moving / oscillating device is used which causes all of the three axes of movement / oscillation to act on the machining head 3. However, some of the control axes act on the workpiece 1. You may Further, the number of axes may be four or more in order to enhance the effect of relative movement.

【0018】なお、上記実施例は、軸対称な回転形状曲
面の加工例について説明したが、本発明は任意な2また
は3次元曲面の加工に適用でき、被加工物1と加工ヘッ
ド3の移動・揺動装置5も、例えば移動は被加工物1を
X,Y,Z移動するテーブルに取付け、加工ヘッド3は
揺動のみとするなど、種々変更可能である。
In the above embodiment, an example of processing a rotationally symmetrical curved surface having an axis of symmetry has been described. However, the present invention can be applied to processing of any two-dimensional or three-dimensional curved surface, and the movement of the workpiece 1 and the processing head 3 can be performed. The swinging device 5 can also be variously changed, for example, by mounting the workpiece 1 on a table that moves the workpiece 1 in X, Y, and Z, and moving the processing head 3 only by swinging.

【0019】次に、図3から図5は、加工ヘッド3の各
種先端形状を示したものである。ここで、加工ヘッド3
は反応ガスの流出経路31を中心とする円筒状のものが
望ましい。また、先端の大きさは、加工面の曲率が一定
とみなされる範囲を限度とする必要がある。
Next, FIGS. 3 to 5 show various tip shapes of the processing head 3. Here, the processing head 3
Is preferably cylindrical with the reaction gas outflow path 31 as the center. Further, the size of the tip needs to be limited within a range in which the curvature of the processed surface is considered to be constant.

【0020】図3は,反応ガスの流出方向に対して垂直
な面を先端形状とした例である。これは、形状が簡単で
加工ヘッドの製作が容易な形式であり、加工面が球面形
状の場合や加工面の曲率が比較的小さい場合に適してい
る。
FIG. 3 shows an example in which the surface perpendicular to the outflow direction of the reaction gas has a tip shape. This is a type in which the processing head has a simple shape and is easy to manufacture, and is suitable when the processing surface is spherical or when the processing surface has a relatively small curvature.

【0021】図4は、先端形状を図3に対して凹形状と
した例である。これは、例えば凸レンズの加工のように
曲率が正である曲面に対して好適である。また、曲面形
状の加工の場合、曲率の大小に応じて凹部の角度を設定
することにより、加工可能な曲率の範囲を広げることが
できる。
FIG. 4 is an example in which the tip shape is concave with respect to FIG. This is suitable for a curved surface having a positive curvature, such as processing of a convex lens. Further, in the case of processing a curved surface shape, it is possible to widen the range of curvature that can be processed by setting the angle of the recess according to the magnitude of the curvature.

【0022】図5は、先端形状を図3に対して凸形状と
した例である。これは、例えば凹レンズの加工のように
曲率が負である曲面や非球面レンズなどの加工において
曲率変化が大きい曲面に対して好適である。また、図4
のものと同様に、凸部の角度設定により、加工可能な曲
率の範囲を広くとることができる。なお、図4および図
5において、先端形状を円錐面と想定して図示している
が、加工面の形状に合わせて曲率を持たせることもでき
る。
FIG. 5 shows an example in which the tip shape is convex with respect to FIG. This is suitable for a curved surface having a negative curvature such as a concave lens processing or a curved surface having a large curvature change in processing an aspherical lens. Also, FIG.
Similar to the above, by setting the angle of the convex portion, it is possible to widen the range of curvature that can be processed. 4 and 5, the tip shape is illustrated assuming that it is a conical surface, but it is also possible to give a curvature according to the shape of the processed surface.

【0023】[0023]

【発明の効果】2または3次元曲面形状を有する加工対
象部分の表面の接線方向にプラズマ化した反応ガスを流
すことにより、被加工物の形状精度と表面粗さの向上に
適した反応ガスの流れを得ることができる。
The reaction gas suitable for improving the shape accuracy and the surface roughness of the workpiece is made to flow by flowing the reaction gas that has been turned into plasma in the tangential direction of the surface of the processing target portion having the two-dimensional or three-dimensional curved surface shape. You can get the flow.

【0024】また、加工は化学的作用によるため加工歪
や加工面の損傷を最小限とすることができる。さらに加
工ヘッドと被加工物との間のガス流れにより反応後のガ
スが加工対象部から速やかに排気されるため反応生成物
による加工面の汚染を防止できる。
Further, since processing is performed by a chemical action, processing strain and damage to the processed surface can be minimized. Further, since the gas after the reaction is quickly exhausted from the processing target portion by the gas flow between the processing head and the workpiece, it is possible to prevent contamination of the processed surface by the reaction product.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の加工装置の一実施例の全体構成を示す
説明図。
FIG. 1 is an explanatory diagram showing an overall configuration of an embodiment of a processing apparatus of the present invention.

【図2】被加工物と加工ヘッドとの相対位置の説明図。FIG. 2 is an explanatory diagram of a relative position between a workpiece and a processing head.

【図3】加工ヘッドの縦断面図。FIG. 3 is a vertical sectional view of a processing head.

【図4】加工ヘッドの縦断面図。FIG. 4 is a vertical sectional view of a processing head.

【図5】加工ヘッドの縦断面図。FIG. 5 is a vertical cross-sectional view of a processing head.

【符号の説明】[Explanation of symbols]

1…被加工物,2…テーブル,3…加工ヘッド、4…プ
ラズマ生成室、5…移動・揺動装置、7…反応容器、8
…制御装置。
DESCRIPTION OF SYMBOLS 1 ... Workpiece, 2 ... Table, 3 ... Processing head, 4 ... Plasma generation chamber, 5 ... Moving / oscillating device, 7 ... Reaction container, 8
…Control device.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 プラズマエッチングを利用した加工装置
において、曲面形状の被加工物に対向した加工ヘッド
と、この加工ヘッドに活性粒子を含む反応ガスを供給す
るプラズマ生成室と、前記被加工物を搭載するテーブル
と、前記被加工物と加工ヘッドとの相対位置を変更する
2または3次元移動機構と前記加工ヘッドを被加工物の
被加工面に垂直に向ける揺動機構とを有する移動・揺動
装置と、この移動・揺動装置を制御する制御装置と、少
なくとも前記加工ヘッドおよび被加工物を収容する反応
容器とからなる曲面加工装置。
1. In a processing apparatus using plasma etching, a processing head facing a curved workpiece, a plasma generating chamber for supplying a reactive gas containing active particles to the processing head, and the workpiece are provided. Moving / swinging having a table to be mounted, a two- or three-dimensional moving mechanism for changing the relative positions of the workpiece and the processing head, and a swinging mechanism for orienting the processing head perpendicularly to the workpiece surface of the workpiece. A curved surface processing device comprising a moving device, a control device for controlling the moving / swinging device, and a reaction container accommodating at least the processing head and a workpiece.
【請求項2】 反応容器内で、曲面形状の被加工物に対
し、活性粒子を含む反応ガスを流出する加工ヘッドを被
加工面に垂直に向けた状態で、被加工物の加工曲面に沿
って移動させ、プラズマエッチングを利用した加工を行
うことを特徴とする曲面加工方法。
2. In a reaction vessel, along a processing curved surface of a workpiece with a processing head for flowing out a reaction gas containing active particles perpendicular to the processing surface with respect to a curved workpiece. The curved surface processing method is characterized in that the surface is moved and moved to perform processing using plasma etching.
JP13524695A 1995-06-01 1995-06-01 Device and method for processing curved surface Pending JPH08325758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13524695A JPH08325758A (en) 1995-06-01 1995-06-01 Device and method for processing curved surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13524695A JPH08325758A (en) 1995-06-01 1995-06-01 Device and method for processing curved surface

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JPH08325758A true JPH08325758A (en) 1996-12-10

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JP13524695A Pending JPH08325758A (en) 1995-06-01 1995-06-01 Device and method for processing curved surface

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