JPH0832096A - Semiconductor device, manufacture thereof and manufacturing device thereof - Google Patents

Abstract

PURPOSE:To improve yield and productivity in a manufacturing method of a semiconductor device which uses a semiconductor film and the manufacturing device of the semiconductor device and to improve the performance of the semiconductor device manufactured using the semiconductor film. CONSTITUTION:When a semiconductor film 1 is separated from a substrate 100, the space between the film 1 and the substrate 100 is made to fill with water 11 or an aqueous solution and the film 1 is made to slide in parallel to the surface of the substrate 100 to separate from the substrate 100. In short, the device is manufactured into such a structure that it has a flat first region of a size capable of setting the substrate 100 on the first region and a flat second region of a size capable of setting the film 1 on the second region, a step, which is smaller than the thickness of the film 1 and is half or larger than the thickness of the substrate 100, is provided between the first and second regions, the substrate 100 is catched on the step and the film 1 is separated from the substrate 100.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device such as a solar cell using a semiconductor film, a method for manufacturing the same, and a manufacturing apparatus for the same. In particular, the present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus when the semiconductor film is separated from the substrate and applied to the semiconductor device.

[0002]

2. Description of the Related Art A conventional method of manufacturing a semiconductor device using a semiconductor film will be described with reference to FIGS. 13 and 14 show, for example, US Pat. No. 4,72.
It is a schematic diagram which shows the manufacturing method of the conventional semiconductor device shown by US Pat. No. 7,047 and US Pat. No. 4,816,420.

In FIGS. 13 and 14, 100 is a substrate, 101 is an insulating film for covering the substrate 100, and 1 is a semiconductor film.

The substrate 100 and the semiconductor film 1 are made of gallium arsenide. First, the surface of the substrate 100 shown in FIG. 13A is covered with the insulating film 101. Next, as shown in FIG. 13B, the insulating film 101 is provided with stripe-shaped openings to expose the surface of the substrate 100. Next, FIG.
As shown in FIGS. 14A and 14B, the semiconductor film 1 is crystal-grown with the exposed substrate surface as a nucleus.

In the structure shown in FIG. 14B, the semiconductor film 1 has a substrate 100 only in the opening of the insulating film 101.
Since the insulating film 101 is connected to the semiconductor film 1
When the semiconductor film 1 is composed of a material having a weak bond with
By applying mechanical stress to the semiconductor film 1, the connection portion with the substrate 100 can be broken and the semiconductor film 1 can be peeled off from the substrate 100, as shown in FIG.

However, in this method, since the semiconductor film 1 is forcibly peeled off by breaking the connecting portion with the substrate 100, the semiconductor film 1 itself cannot always be separated without damaging it. However, there was a problem that the yield was poor.

Next, a conventional semiconductor device manufacturing apparatus will be described with reference to FIG. FIG. 15 is a perspective view showing a conventional semiconductor device manufacturing apparatus.

In FIG. 15, 600 is a semiconductor wafer,
Reference numeral 500 is an apparatus, and reference numeral 501 is a groove into which the semiconductor wafer 600 is inserted. This device 500 is configured to insert one semiconductor wafer 600 into each groove 501 and handle a total of 25 semiconductor wafers 600 at the same time. Then, in a state where the semiconductor wafer 600 is loaded, wet processing such as cleaning and etching and conveyance are performed.

However, when the semiconductor wafer 600 is processed to manufacture a semiconductor device as used in a conventional semiconductor device, the semiconductor wafer 600 has a large mechanical strength, and therefore the semiconductor wafer 600 shown in FIG. Such a device 50
However, when handling a semiconductor film having a thickness of 100 μm or less, the mechanical strength of the semiconductor film is weak, so that the semiconductor device as shown in FIG. In 500, there was a problem that the semiconductor film was easily broken and the yield was poor.

Next, a method for loading the semiconductor wafer 600 into the apparatus 500 will be described with reference to FIG.
FIG. 16 is a diagram showing a state in which a semiconductor wafer is loaded in a conventional semiconductor device manufacturing apparatus.

In FIG. 16, 502 is a semiconductor wafer 6.
00 is a belt for carrying the semiconductor wafer 60.
0 is conveyed on the belt 502, and the apparatus 500
It is shown that it is being carried in the groove 501.
Incidentally, 503 is a stage for moving the apparatus 500 up and down.

However, when handling the semiconductor wafer 600, it is a precondition for handling the semiconductor wafer 600 that it has sufficient mechanical strength. Therefore, also in this case, when handling a semiconductor film having a thickness of 100 μm or less, the mechanical strength of the semiconductor film is weak, so that in the device 500, the semiconductor film is easily broken and the yield is low. was there.

Further, another conventional method of manufacturing a semiconductor device using a semiconductor film will be described with reference to FIGS. 17 and 18. FIG. 17 shows a semiconductor device having a structure in which a diffusion layer is provided on the front surface of a semiconductor film, the inner wall of a through hole reaching from the front surface to the back surface, and the diffusion layer at least around the through hole on the back surface of the semiconductor film among semiconductor devices using a semiconductor film. It is a figure which shows the conventional manufacturing method.

17A to 17C, 1 is a semiconductor film, 2 is a through hole provided in the semiconductor film 1, 3 is a diffusion layer provided in the semiconductor film 1, and 5 is a resist.

FIG. 17A shows a state in which the diffusion layer 3 is provided on the front surface of the semiconductor film 1, the inner wall of the through hole 2, and the back surface of the semiconductor film 1. After that, as shown in FIG. 17B, a resist 5 is formed on the front surface of the semiconductor film 1, the inner wall of the through hole 2, and the peripheral portion of the through hole 2 on the back surface of the semiconductor film 1 by a method such as photoengraving or screen printing. Formed by. next,
As shown in FIG. 17C, the semiconductor film 1 is immersed in an etching solution to etch the diffusion layer 3 in the region other than the peripheral portion of the through hole 2 on the back surface of the semiconductor film 1. After that, the resist 5 is removed, and an electrode is provided on the back surface of the semiconductor film 1 as shown in FIG.

However, in this method, since it is necessary to form the resist 5 on both surfaces of the semiconductor film 1,
It is difficult to handle the semiconductor film 1 with the resist 5 formed, and there is a problem that productivity is extremely poor. Further, since the semiconductor film 1 itself needs to be etched, there is a drawback in that the surface from which the diffusion layer 3 has been removed can only be the surface that has been damaged by etching. Incidentally, when dry etching is used, the resist 5 may be formed only on the back surface, but there is a problem that etching damage is further increased.

FIG. 18 is a diagram showing a conventional semiconductor device having a structure in which a diffusion layer is provided on the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and at least the periphery of the through hole on the back surface of the semiconductor film. Is. 6A is a view seen from the back side, FIG. 6B is a sectional view taken along the line AA ′ shown in FIG. 7A, and FIG. 7C is a view taken along the line BB ′ shown in FIG. The cross-sectional views are shown respectively.

Since the electrodes 4A and 4B connected to the diffusion layer 3 are provided on the back surface of the semiconductor film 1, not only the peripheral portion of the through hole 2 but also the diffusion layer 3 is formed on the back surface in accordance with the pattern of the electrodes 4A and 4B. Has been done. For this reason, the area of the diffusion layer 3 becomes large, which hinders the improvement of the performance of the semiconductor device.

Through holes 2 are formed in the semiconductor film 1 at equal intervals. The current-voltage characteristics representing the performance of this semiconductor device largely depend on the resistance of the surface of the semiconductor film 1 of the through holes 2 and the distance between the through holes 2, and unless these parameters are properly controlled, sufficient characteristics can be obtained. It was difficult to obtain this semiconductor device.

[0020]

Since the conventional method for manufacturing a semiconductor device using the semiconductor film and the apparatus for manufacturing a semiconductor device as described above are configured as described above, the yield is low and the productivity is high. There was a problem that was bad. Further, since the conventional semiconductor device using the semiconductor film is configured as described above, it is difficult to obtain a device having sufficient performance.

The present invention has been made in order to solve the above-mentioned problems, and the semiconductor film can be easily separated from the substrate, the semiconductor film can be easily handled, the yield can be improved, and the productivity can be improved. It is an object of the present invention to obtain a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus that can improve Another object is to obtain a semiconductor device having excellent characteristics.

[0022]

According to a first aspect of the present invention, there is provided a semiconductor device comprising: a front surface of a semiconductor film; an inner wall of a through hole extending from the front surface to the back surface; and a periphery of the through hole on the back surface of the semiconductor film. A layer is provided, and in a semiconductor device having a structure in which both the electrode connected to the diffusion layer and the electrode on the other side are provided on the back surface side of the semiconductor film, the electrode connected to the diffusion layer is The semiconductor film is covered with an insulating film except for the contact portion to the diffusion layer and the contact portion of the electrode of the other pole to the semiconductor film.

A semiconductor device according to claim 2 of the present invention is
The insulating film serves as an antireflection film of a semiconductor device.

A semiconductor device according to claim 3 of the present invention is
The through holes are arranged at a pitch of 1.5 mm or less.

A semiconductor device according to claim 4 of the present invention is
The electrical resistance of each through hole between the front and back of the semiconductor film is set to 10Ω or less.

A method of manufacturing a semiconductor device according to a fifth aspect of the present invention is a method of manufacturing a semiconductor device, including a step of separating a semiconductor film formed on a substrate from the substrate, wherein the semiconductor film is separated. The semiconductor film and the substrate are filled with water or an aqueous solution, and the semiconductor film is slid along the substrate surface to be separated.

A method of manufacturing a semiconductor device according to a sixth aspect of the present invention is a method of manufacturing a semiconductor device, including a step of separating a semiconductor film formed on a substrate from the substrate, wherein the substrate and the semiconductor film are separated from each other. The semiconductor layer is separated from the substrate by etching the peeling layer between them with hydrofluoric acid heated to 50 ° C. or higher.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein the first container is filled with an appropriate amount of hydrofluoric acid, and the second container
The container is filled with an appropriate amount of water, the first container is put therein, and the water in the second container is heated to indirectly heat the hydrofluoric acid in the first container. It is a thing.

In the method of manufacturing a semiconductor device according to claim 8 of the present invention, the separated semiconductor film has a thickness of 100 μm or less, and the semiconductor film has a mesh pitch of 0.5 mm or more,
With a mesh made of tetrafluoroethylene resin of 2.5 mm or less,
The method further includes a step of performing a wet process such as cleaning and etching in a state of being sandwiched and held from the front and back.

In the method of manufacturing a semiconductor device according to claim 9 of the present invention, the separated semiconductor film has a thickness of 100 μm or less, and the semiconductor film is held and conveyed while floating on the surface of water. Is further included.

In the method of manufacturing a semiconductor device according to a tenth aspect of the present invention, a diffusion layer is provided on the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. In a method for manufacturing a semiconductor device including a step, after forming an insulating film on the front surface, the back surface and the inner wall of the through hole, the insulating film in a region other than a region where the diffusion layer is to be provided is removed to form the semiconductor film. The pattern of the diffusion layer is formed by etching the semiconductor film using the exposed and remaining insulating film as a mask.

According to an eleventh aspect of the present invention, in a method for manufacturing a semiconductor device, a diffusion layer is provided on a front surface of a semiconductor film, an inner wall of a through hole reaching from the front surface to the back surface, and a periphery of the through hole on the back surface of the semiconductor film. In a method for manufacturing a semiconductor device including a step, after forming an insulating film on the front surface, the back surface and an inner wall of the through hole, the insulating film is removed according to a formation pattern of the diffusion layer to expose the semiconductor film and impurities. The diffusion layer is formed by diffusion.

According to a twelfth aspect of the present invention, in the method of manufacturing a semiconductor device, the insulating film is an antireflection film of the semiconductor device.

In the method of manufacturing a semiconductor device according to a thirteenth aspect of the present invention, after forming the diffusion layer and removing the remaining insulating film, another insulating layer is formed on the front surface, the back surface and the inner wall of the through hole. After removing the contact portion of the electrode connected to the diffusion layer to the diffusion layer and the contact portion of the contact of the other pole electrode to the semiconductor film, the electrode is connected to the diffusion layer. And an electrode of the other pole.

According to a fourteenth aspect of the present invention, in the method of manufacturing a semiconductor device, the insulating film is a silicon oxide film deposited by a CVD method.

According to a fifteenth aspect of the present invention, in the method of manufacturing a semiconductor device, the thickness of the silicon oxide film is 1000 angstroms or more.

A semiconductor device manufacturing apparatus according to claim 16 of the present invention is a semiconductor device manufacturing apparatus for separating a semiconductor film formed on a substrate from the substrate, wherein the substrate to which the semiconductor film is attached is accommodated. And a second region having a size capable of accommodating only the semiconductor film, and a step is provided between the first region and the second region. It is a thing.

According to a seventeenth aspect of the present invention, in the semiconductor device manufacturing apparatus, the first and second regions are horizontally positioned through the step, the step is smaller than the thickness of the substrate, and the substrate is It is larger than half the thickness of.

In a semiconductor device manufacturing apparatus according to an eighteenth aspect of the present invention, the first region is a first space in which the thickness of the space is larger than the thickness of the substrate and the semiconductor film, and the second region is the second space. The region is a second space in which the thickness of the space is smaller than the thickness of the substrate and larger than the thickness of the semiconductor film, and the first and second spaces are vertically positioned.

In a semiconductor device manufacturing apparatus according to a nineteenth aspect of the present invention, the first region is a first space having a space width larger than the width of the substrate, and the second region is a space. Is a second space whose width is smaller than the width of the substrate and larger than the width of the semiconductor film, and the first and second spaces are vertically positioned.

According to a twentieth aspect of the present invention, in a semiconductor device manufacturing apparatus, a first hermetic container filled with hydrofluoric acid, and a second hermetic container containing the first hermetic container are provided.
A heating device for heating the first closed container and a temperature control device for controlling the heating device at a constant temperature are provided.

A semiconductor device manufacturing apparatus according to a twenty-first aspect of the present invention is a semiconductor device manufacturing apparatus for wet-processing a semiconductor film, wherein two mesh pitches of 0.5 mm or more and 2.5 mm or less are used. Wet treatment is performed while a semiconductor film having a thickness of 100 μm or less is sandwiched and held by a mesh made of a fluoroethylene resin from the front and back.

A semiconductor device manufacturing apparatus according to a twenty-second aspect of the present invention is a semiconductor device manufacturing apparatus for moving and transporting a semiconductor film, the semiconductor having a thickness of 100 μm or less held on a surface of water. It is provided with a mesh made of tetrafluoroethylene resin that scoops up the membrane and stores it in a cassette.

[0044]

In the semiconductor device according to the first aspect of the present invention, the diffusion layer is provided on the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. In a semiconductor device having a structure in which both the electrode connected to the diffusion layer and the electrode of the other pole are provided on the back surface side of the semiconductor film, the electrode connected to the diffusion layer contacts the diffusion layer. Since the semiconductor film is covered with an insulating film except for a contact portion and the contact portion of the electrode of the other pole with the semiconductor film, the area area of the diffusion layer is small,
The performance of the semiconductor device is improved.

In the semiconductor device according to the second aspect of the present invention, since the insulating film is the antireflection film of the semiconductor device, when the solar cell is manufactured, the number of steps is reduced, and the productivity and the yield are improved. It

In the semiconductor device according to claim 3 or 4 of the present invention, the through holes are arranged at a pitch of 1.5 mm or less, or the electric resistance of the through holes between the front and back of the semiconductor film is 1 or less. Since it is set to 10Ω or less, it is possible to obtain sufficiently excellent performance as a solar cell.

In the method of manufacturing a semiconductor device according to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device, including a step of separating a semiconductor film formed on a substrate from the substrate, in separating the semiconductor film. In addition, since water or an aqueous solution is filled between the semiconductor film and the substrate, and the semiconductor film is slid along the substrate surface for separation, the semiconductor film can be easily separated without being broken, and the yield or Productivity can be improved.

A method of manufacturing a semiconductor device according to a sixth aspect of the present invention is a method of manufacturing a semiconductor device, including a step of separating a semiconductor film formed on a substrate from the substrate. The release layer between
Since the semiconductor film is separated from the substrate by etching with hydrofluoric acid heated to a temperature of not less than 0 ° C., the time required for etching can be shortened, and the yield and productivity can be improved.

In the method of manufacturing a semiconductor device according to a seventh aspect of the present invention, the first container is filled with an appropriate amount of hydrofluoric acid, the second container is filled with an appropriate amount of water, and the first container is filled therein. And the water in the second container is heated to indirectly heat the hydrofluoric acid in the first container, so that the hydrofluoric acid, which is the strongest acid, directly enters the heating device. It is possible to prevent contact with each other, and the amount of hydrofluoric acid can be minimized to save the amount used.

In the method of manufacturing a semiconductor device according to claim 8 of the present invention, the separated semiconductor film has a thickness of 10
0 μm or less and the semiconductor film has a mesh pitch of 0.5 m
Handle the semiconductor film without destroying it, as it further includes a step of performing a wet treatment such as cleaning and etching with the mesh made of tetrafluoroethylene resin of m or more and 2.5 mm or less sandwiched and held from the front and back. It is possible to improve yield and productivity.

In the method of manufacturing a semiconductor device according to claim 9 of the present invention, the separated semiconductor film has a thickness of 10
Since the thickness is 0 μm or less, and further including the step of holding and transporting the semiconductor film in a state of floating on the surface of water, the semiconductor film can be handled without being destroyed, and the yield and productivity can be improved. Moreover, there is no contamination of impurities.

In the method of manufacturing a semiconductor device according to the tenth aspect of the present invention, a diffusion layer is provided on the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. In a method of manufacturing a semiconductor device including a step of providing, after forming an insulating film on the front surface, the back surface and the inner wall of the through hole, the insulating film in a region other than a region where the diffusion layer is to be provided is removed to form the semiconductor film. Is exposed, and the pattern of the diffusion layer is formed by etching the semiconductor film using the remaining insulating film as a mask, so that the resist only needs to be formed on the back surface side of the semiconductor film, and the productivity and the yield are improved. It can be greatly improved.

In the method of manufacturing a semiconductor device according to claim 11 of the present invention, a diffusion layer is provided on the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. In a method of manufacturing a semiconductor device including a step of providing, after forming an insulating film on the front surface, the back surface and the inner wall of the through hole, the insulating film is removed according to a formation pattern of the diffusion layer to expose the semiconductor film. Since the diffusion layer is formed by impurity diffusion, it is not necessary to etch the semiconductor film itself for patterning the diffusion layer, and the diffusion layer can be formed only on the peripheral portion of the through hole opening on the back surface without damaging the surface. .

In the method for manufacturing a semiconductor device according to the twelfth aspect of the present invention, since the insulating film is an antireflection film for the semiconductor device, in the case of a solar cell, the number of steps is reduced, and the productivity and the yield are improved. it can.

In the method of manufacturing a semiconductor device according to a thirteenth aspect of the present invention, after forming the diffusion layer and removing the remaining insulating film, another insulating layer is formed on the front surface, the back surface and the inner wall of the through hole. And removing the contact portion of the electrode connected to the diffusion layer to the diffusion layer and the contact portion of the electrode of the other pole to the semiconductor film, and then connecting to the diffusion layer. Since the method further includes the step of forming the electrode to be formed and the electrode of the other electrode, it is possible to manufacture a device with excellent performance and improve the productivity and the yield.

In the method of manufacturing a semiconductor device according to the fourteenth aspect of the present invention, since the insulating film is a silicon oxide film deposited by the CVD method, etching and the like are easy and it is compatible with other processes. It is convenient in terms of sex.

In the method of manufacturing a semiconductor device according to claim 15 of the present invention, the thickness of the silicon oxide film is set to 1
Since it is set to 000 Å or more, it is not etched by the light etching performed before the impurity diffusion.

A semiconductor device manufacturing apparatus according to claim 16 of the present invention is a semiconductor device manufacturing apparatus for separating a semiconductor film formed on a substrate from the substrate, wherein the substrate to which the semiconductor film is attached is A first region having a size capable of accommodating and a second region having a size capable of accommodating only the semiconductor film are provided, and a step is formed between the first region and the second region. Since it is provided, the semiconductor film can be separated without breaking.

In a semiconductor device manufacturing apparatus according to a seventeenth aspect of the present invention, the first and second regions are positioned horizontally via the step, and the step is smaller than the thickness of the substrate, and Since the thickness is larger than half the thickness of the substrate, the semiconductor film can be easily separated without breaking.

According to an eighteenth aspect of the present invention, in the semiconductor device manufacturing apparatus, the first region is a first space in which the thickness of the space is larger than the thickness of the substrate and the semiconductor film, and the second region. Region is a second space in which the thickness of the space is smaller than the thickness of the substrate and larger than the thickness of the semiconductor film, and since the first and second spaces are vertically positioned, the semiconductor film is Can be easily separated without breaking.

In the semiconductor device manufacturing apparatus according to claim 19 of the present invention, the first region is a first space having a space width larger than the width of the substrate, and the second region is Since the width of the space is a second space smaller than the width of the substrate and larger than the width of the semiconductor film, and the first and second spaces are positioned vertically, the semiconductor film is not destroyed. Can be easily separated.

In a semiconductor device manufacturing apparatus according to a twentieth aspect of the present invention, a first hermetic container filled with hydrofluoric acid, and a second hermetic container containing the first hermetic container, Since the heating device for heating the first closed container and the temperature control device for controlling the heating device at a constant temperature are provided, it is possible to prevent hydrofluoric acid, which is the strongest acid, from coming into direct contact with the heating device. , The amount of hydrofluoric acid can be minimized to save the amount used.

In a semiconductor device manufacturing apparatus according to a twenty-first aspect of the present invention, the mesh pitch is 0.5 in the semiconductor device manufacturing apparatus for wet processing a semiconductor film.
Since the wet treatment is performed while holding the semiconductor film having a thickness of 100 μm or less from the front and back sides with two meshes of tetrafluoroethylene resin of 2 mm or more and 2.5 mm or less, handle it without destroying the semiconductor film. It is possible to improve yield and productivity.

In a semiconductor device manufacturing apparatus according to a twenty-second aspect of the present invention, a semiconductor device manufacturing apparatus for moving and transporting a semiconductor film has a thickness of 100 μm or less held on a surface of water. Since the tetrafluoroethylene resin mesh for scooping up the semiconductor film and accommodating it in the cassette is provided, the semiconductor film can be handled without being destroyed, and the yield and productivity can be improved.

[0065]

【Example】

Example 1. A method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 (a)
(C) is a schematic diagram for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention.

In FIGS. 1A to 1C, 100 is a substrate, 10 is a release layer, 11 is water, 1 is a semiconductor film, and 2 is a through hole provided in the semiconductor film 1.

For example, the substrate 100 is made of a single crystal silicon wafer, and the peeling layer 10 is made of a silicon oxide film formed by thermally oxidizing the substrate 100. Alternatively, the release layer 10
May be a silicon oxide film deposited by a method such as CVD. The thickness of the single crystal silicon wafer is usually 625 μm when the diameter is 6 inches. The thickness of the peeling layer 10 is, for example, 1 μm. The semiconductor film 1 has C on the release layer 10.
It is a polycrystalline silicon film deposited by a method such as VD. Further, the crystal grain size may be expanded by means such as zone melting recrystallization or solid phase growth to improve the electrical characteristics. The thickness of the semiconductor film 1 is preferably about 30 to 50 μm when a solar cell is formed using the semiconductor film 1.

In FIG. 1A, the peeling layer 10 is formed on the semiconductor film 1.
It shows a state in which the through-hole 2 reaching up to is provided. In this state, soak it in hydrofluoric acid (not shown),
Hydrofluoric acid is introduced through the through holes 2 to remove the peeling layer 10 by etching, followed by washing with water, and as shown in FIG. 1B, the space between the semiconductor film 1 and the substrate 100 is replaced with water 11. In this state, the water 11 acts as an adhesive between the semiconductor film 1 and the substrate 100, and the semiconductor film 1 cannot be easily peeled off from the substrate 100. By the way, even if the water 11 between the semiconductor film 1 and the substrate 100 is removed by leaving it in this state or heating and drying it, a bond is formed between the two, and the semiconductor film 1 is naturally formed. It does not come off.

Therefore, in the state of FIG. 1B, when the substrate 100 is held and a lateral force is applied to the semiconductor film 1 along the surface of the substrate 100 as indicated by an arrow in the figure,
The water 11 between the semiconductor film 1 and the substrate 100 serves as a lubricant, and the semiconductor film 1 can be easily slid on the substrate 100. In this way, as shown in FIG.
The semiconductor film 1 is pulled out from the substrate 100, and the substrate 100
Separate from. By this method, the semiconductor film 1
When is made of silicon, it was possible to easily separate even a product having a thickness of 10 μm and a size of 10 cm square.

In Example 1, when the semiconductor film 1 is separated, the semiconductor film 1 and the substrate 100 are filled with water 11 or an aqueous solution, and the semiconductor film 1 is slid along the substrate surface for separation. It is a thing. Therefore, the semiconductor film 1 can be separated without being damaged, the yield can be improved, and the productivity can be improved.

Example 2. A semiconductor device manufacturing apparatus according to a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a schematic sectional view showing an apparatus for realizing the method for manufacturing the semiconductor device shown in FIG.

In FIG. 2, 21 is a first region, 22 is a second region, 23 is a step between the first region 21 and the second region 22, and 24 is a frame.

A flat plate of tetrafluoroethylene resin (registered trademark "Teflon") having a thickness of about 1 cm is counterbored to form a flat first region 21 and a flat second region 22 as shown in FIG. To form. A counterbore is evenly formed to a depth of about 2 to 3 times the thickness of the substrate 100 to form a first region 21, and a counterbore slightly shallower than that is formed to a second region 22.
The first region 21 and the second region 22 are each formed in an area that can accommodate the substrate 100 and the semiconductor film 1. First
The step 23 between the region 21 and the second region 22 is set to be smaller than the thickness of the substrate 100 and larger than half the thickness of the substrate 100. Around the first area 21 and the second area 22, the frame 2 is left with a portion having no spot facing.
Set to 4.

Next, a method of manufacturing a semiconductor device using the apparatus of FIG. 2 will be described. With the semiconductor film 1 on the substrate 100 as shown in FIG.
Place 0 in the first region. In this state, the whole is soaked in water or wetted with water, and a lateral force is applied to the semiconductor film 1 to move it to the second region 22. At this time, the substrate 100 is caught by the step 23 and cannot move to the second region 22, but since the step 23 is set smaller than the thickness of the substrate 100, the semiconductor film 1 on the substrate 100 is not formed.
Can move smoothly without being hindered by the step 23. The semiconductor film 1 is completely in the second region 2
The separation of the semiconductor film 1 and the substrate 100 is completed at the time of moving to 2. Therefore, the semiconductor film 1 can be separated without being damaged, the yield can be improved, and the productivity can be improved.

At this time, the lateral force applied to the semiconductor film 1 is
For example, the edge of the semiconductor film 1 may be added by pressing it with a jig, or the surface of the semiconductor film 1 may be pressed with a soft material as a whole and added by friction. Alternatively, the semiconductor film 1 may be moved by gravity while tilting the whole. At this time, if vibration such as application of ultrasonic waves is applied, the movement of the semiconductor film 1 becomes smoother. Further, the semiconductor film 1 may be moved from above the semiconductor film 1 toward the second region 22 by frictional force with water.

In the second embodiment, the step 23 is formed on the substrate 1.
The thickness is set to be larger than half the thickness of 00 for the following reason. That is, the peripheral portion of the substrate 100 is usually chamfered, and its cross section has a slightly rounded shape. Therefore, if the step 23 is smaller than half the thickness of the substrate 100, the substrate 100 rides on the step 23 when a force for moving the semiconductor film 1 to the second region 22 is applied. In the second area 22
May move to the semiconductor film 1 and the substrate 10.
This is because it may happen that the separation from 0 is not achieved.

Example 3. A semiconductor device manufacturing apparatus according to a third embodiment of the present invention will be described with reference to FIG. FIG. 3 is a schematic sectional view showing a semiconductor device manufacturing apparatus according to a third embodiment of the present invention.

In FIG. 3, 31 is a first space and 32 is a second space.

A first space 31 and a second space 32 are formed by combining a plate material of tetrafluoroethylene resin and the like.
The first space 31 is large enough to accommodate the semiconductor film 1 attached to the substrate 100, and the second space 32 is the semiconductor film 1.
Each is sized to accommodate only one.
The thickness of each space is the substrate 100 of the first space 31.
And the second space 32 is smaller than the thickness of the substrate 100 and larger than the thickness of the semiconductor film 1.

In this state, when the peeling layer 10 is removed by etching by immersing it in hydrofluoric acid, the force for fixing the semiconductor film 1 to the substrate 100 is lost, so that the semiconductor film 1 moves along the surface of the substrate 100 by gravity. And moves toward the second space 32. Since the substrate 100 has such a size that it cannot move into the second space 32, only the semiconductor film 1 moves into the second space 32, and the semiconductor film 1 and the substrate 100 are separated. Therefore, the semiconductor film 1 can be separated without being damaged, the yield can be improved, and the productivity can be improved.

Example 4. A semiconductor device manufacturing apparatus according to Embodiment 4 of the present invention will be described with reference to FIG. Fourth Embodiment FIG. 4 is a schematic front view showing a semiconductor device manufacturing apparatus according to a fourth embodiment of the present invention.

In FIG. 4, 31A is the first space, and 32 is
A is the second space.

In the third embodiment described above, the first space 3
Although the thicknesses of the first and second spaces 32 are changed, in Example 4, when the semiconductor film 1 is smaller than the size of the substrate 100 by combining a plate material of tetrafluoroethylene resin as shown in FIG. In the above, the width of the second space 32A is configured to be smaller than the width of the first space 31A so that the semiconductor film 1 is inserted but the substrate 100 is not inserted.

In this case as well, when the peeling layer 10 is removed by etching by immersing it in hydrofluoric acid, the force for fixing the semiconductor film 1 to the substrate 100 is lost, so that the semiconductor film 1 is gravitationally applied to the substrate. Move along the surface of 100 towards the second space 32A. The substrate 100 is the second space 3
Since the size is such that it cannot move to 2A, only the semiconductor film 1 moves to the second space 32A, and the semiconductor film 1 and the substrate 10
The separation from 0 is performed. Therefore, the semiconductor film 1 can be separated without being damaged, the yield can be improved, and the productivity can be improved.

Example 5. A method of manufacturing a semiconductor device according to the fifth embodiment of the present invention will be described.

In FIG. 1 showing the above Example 1, hydrofluoric acid was introduced from the through hole 2 reaching the peeling layer 10 provided in the semiconductor film 1 to remove the peeling layer 10 by etching to remove the semiconductor film. The process of removing the bond between the substrate 1 and the substrate 100 has been described. At this time, it is generally known that the etching rate of the silicon oxide film with hydrofluoric acid depends on the temperature of hydrofluoric acid.

By the way, since a narrow gap between the semiconductor film 1 and the substrate 100 has to be etched through the thin holes of the through holes 2, it takes a very long time to completely finish the etching at room temperature. When the distance between the through holes 2 was 1 mm, it took about one day and night. The required time did not change significantly even if the size of the through hole 2 or the thickness of the release layer 10 was changed.

On the other hand, by raising the temperature of hydrofluoric acid, the time required to complete the etching was greatly shortened. It has been found effective to raise the temperature to 50 ° C. or higher. Thereby, when the distance between the through holes 2 was 1 mm, the etching was completed in 2 to 3 hours. Therefore, the semiconductor film 1 can be separated without being damaged, the yield can be improved, and the productivity can be improved.

The reason why raising the temperature to 50 ° C. or higher is effective is considered as follows. That is, one is that the reaction becomes active and the etching speed itself increases. Secondly, the gas component generated by the etching is easily vaporized and becomes a bubble to form the semiconductor film 1.
Is pushed up to widen the gap between the semiconductor film 1 and the substrate 100 to improve the flow of hydrofluoric acid. This effect is more remarkable as the thickness of the semiconductor film 1 is smaller. Furthermore, thirdly, the viscosity of hydrofluoric acid is reduced, and the sneak into the gap between the semiconductor film 1 and the substrate 100 is improved.

Example 6. A semiconductor device manufacturing apparatus according to Embodiment 6 of the present invention will be described with reference to FIG. FIG. 5 is a schematic sectional view showing an apparatus for realizing the method for manufacturing a semiconductor device according to the fifth embodiment.

In FIG. 5, 51 is a first container filled with hydrofluoric acid 33, 52 is a second container filled with water 11, and 53 is a heating provided at the bottom of the second container 52. The device 54 is a temperature control device which is connected to the heating device 53 and a temperature sensor (not shown) provided in the water and is composed of a CPU, a ROM, a RAM and the like. Also, 510 is the first
The lid 520 of the container 51 is a lid of the second container 52.

The first container 51 and the second container are made of tetrafluoroethylene resin. Each is a seamless, one-piece product made by cutting from a tetrafluoroethylene resin block. In the first container 51, the above-mentioned Examples 2 to
Insert the apparatus of No. 4 and fill the required amount of hydrofluoric acid 33. The first container 51 is put into the second container 52, and the gap is filled with the required amount of water 11. The first container 51 has a lid 51
0 and the second container have a lid 520, which is adapted to be hermetically sealed. The peripheral portion of the lid 510 is configured to cover the first container 51 main body from the outside. This is because when the water vaporized by heating falls into water droplets on the inner surface of the lid 510, it is mixed into the first container 51 through the gap of the lid 510, and the concentration of the hydrofluoric acid 33 inside is reduced. This is to prevent this.

In this state, the water 11 in the container is heated by the heating device 53 in the second container 52, and the temperature is controlled by the temperature control device 54 so as to be a constant value of 50 ° C. or higher. As a result, the first container 51 is heated, and the hydrofluoric acid 33 in the first container 51 is indirectly heated. With this configuration, it is possible to prevent the hydrofluoric acid 33, which is the strongest acid, from coming into direct contact with the heating device 53, so that stable heating is possible and the amount of the hydrofluoric acid 33 is reduced to the required minimum. It is possible to save the amount of usage and use it effectively as long as it is limited.

Example 7. A semiconductor device manufacturing apparatus according to Embodiment 7 of the present invention will be described with reference to FIG. FIG. 6 is a schematic view showing a semiconductor device manufacturing apparatus according to the present invention.

In FIG. 6, 61 is a tetrafluoroethylene resin mesh. In addition, 1 is a semiconductor film.

The semiconductor film 1 is held in a gap surrounded by two meshes 61 of tetrafluoroethylene resin. In this state, wet processing such as cleaning and etching is performed. The mesh pitch of the tetrafluoroethylene resin mesh 61 is 0.5 mm or more and 2.5 mm or less. The reason why the mesh pitch is 0.5 mm or more is that if the mesh pitch is smaller than this, water or etching solution may not penetrate due to surface tension.

However, if the mesh pitch is too large, the stress applied to the semiconductor film 1 at the time of processing becomes large. When a 6-inch (150 mm) wafer is supported only by its peripheral edge like a conventional manufacturing apparatus (see FIG. 1).
6), the thickness of a 6-inch wafer is 0.6.
Since it is 25 mm, the aspect ratio is 250. Considering the same aspect ratio for the semiconductor film 1 having a thickness of 100 μm, the mesh pitch is 25 mm. Considering a case where the safety factor is 10 times and the thickness of the semiconductor film 1 is 10 μm, the mesh pitch is 2.5 mm.

Example 8. A method of manufacturing a semiconductor device according to an eighth embodiment of the present invention will be described with reference to FIG. FIG. 7 is a schematic diagram showing a method for manufacturing a semiconductor device according to an eighth embodiment of the present invention.

In FIG. 7, 71 is water (water flow).
In addition, 1 is a semiconductor film and 2 is a through hole.

The surface tension of the water 71 causes the semiconductor film 1 to
Floating on its surface. At this time, the force supporting the semiconductor film 1 is applied to the entire contact surface between the semiconductor film 1 and the water 71,
The semiconductor film 1 is not destroyed by a local stress load. Therefore, the process yield is improved.
Further, since only the water 71 is in contact with the semiconductor film 1, there is an advantage that not only the water can be easily moved to another place but also contamination of impurities is not caused.

Example 9. A semiconductor device manufacturing apparatus according to Embodiment 9 of the present invention will be described with reference to FIG. FIG. 8 is a schematic view showing a semiconductor device manufacturing apparatus according to a ninth embodiment of the present invention.

In FIG. 8, reference numeral 81 is a cassette, and 82 is a stage. In addition, 1 is a semiconductor film, 2 is a through hole, 61
Is a tetrafluoroethylene resin mesh, and 71 is water.

The semiconductor film 1 is floated and supported on the water 71, and is moved and transported according to the flow of the water 71. When the semiconductor film 1 moves to the position of the cassette 81, the stage 8
2 rises and is scooped up by the tetrafluoroethylene resin mesh 61 set in the cassette 81, and water 71
It moves from the surface into the cassette 81. On this occasion,
The force that supports the semiconductor film 1 is always evenly applied to the entire surface of the semiconductor film 1, so that the semiconductor film 1 is not destroyed by the local load stress applied to the semiconductor film 1. Therefore, the yield is improved and the productivity is improved.

Example 10. A method of manufacturing a semiconductor device according to Embodiment 10 of the present invention will be described with reference to FIG. FIG. 9 is a schematic diagram showing a method for manufacturing a semiconductor device according to a tenth embodiment of the present invention. The steps will be described below in accordance with the drawings.

As shown in FIG. 9A, diffusion layers 3 are formed on the front and back surfaces of the semiconductor film 1 and the inner walls of the through holes 2. An insulating film 12 made of, for example, a silicon nitride film, a silicon oxide film, or a laminated layer of these is formed on the front and back surfaces of the semiconductor film 1 and the inner wall of the through hole 2.

As shown in FIG. 9B, a resist (not shown) is provided on the peripheral edge of the back surface of the through hole 2, and the insulating film 12 is patterned by dry etching from the back surface side. As a result, the insulating film 12 remains on the peripheral edge of the opening on the back surface of the through hole 2 according to the resist pattern.

After that, as shown in FIG. 9C, the diffusion layer 3 on the surface of the semiconductor film 1 is used with the insulating film 12 as a mask.
Is patterned with an alkaline solution such as sodium hydroxide or a mixed acid of hydrofluoric acid and nitric acid.

According to this method, the resist is the semiconductor film 1
It is only necessary to form it on the back surface side of, and productivity and yield are greatly improved.

In addition, this method is performed by using the semiconductor film 1.
For example, when applied to a process for producing a solar cell, if an antireflection film formed to reduce reflection loss on the light incident surface of the solar cell is used as the insulating film 12, the number of process steps is simplified and productivity is improved. The yield is greatly improved. As the antireflection film, for example, a silicon nitride film can be used. Incidentally, in many cases, before the antireflection film is provided, the surface of the semiconductor film 1 is thinly oxidized to form a silicon oxide film so that the surface is inactivated. It may be said that the films are laminated.

Example 11. A semiconductor device according to Embodiment 11 of the present invention will be described with reference to FIG. 10A and 10B are views showing a semiconductor device according to an eleventh embodiment of the present invention. FIG. 10A is a view seen from the back side, FIG. 10B is a cross section taken along the line AA ′ of FIG. The cross sections taken along the line BB ′ of (a) are shown respectively.

As described above, when the insulating film 12 has a function of inactivating the surface of the semiconductor film 1, it is necessary for the semiconductor device to cover as much surface of the semiconductor film 1 as possible with the insulating film 12. Desirable for performance. By the way, the diffusion layer 3
Considering a semiconductor film having a structure in which the side electrode 4A is provided on the back surface side of the semiconductor film 1, in the conventional semiconductor device,
As described above, in order to prevent the electrode 4A on the diffusion layer 3 side from contacting the other region, the diffusion layer 3 is formed on the back surface of the semiconductor film 1 according to the electrode pattern on the diffusion layer 3 side as well as the peripheral portion of the opening of the through hole 2. Had to be formed.

On the other hand, in the embodiment shown in FIG. 10, the contact portion of the electrode 4A connected to the diffusion layer 3 to the diffusion layer 3 and the contact portion of the electrode 4B of the other pole to the semiconductor film 1 are provided. Except for this, the semiconductor film 1 is covered with the insulating film 12.
Therefore, the diffusion layer 3 may be formed on the back surface of the semiconductor film 1 only at the peripheral portion of the opening of the through hole 2, and the area of the diffusion layer 3 may be small, which improves the performance of the semiconductor device. further,
If an antireflection film in the case of a solar cell is used as the insulating film 12 at this time, the number of steps is reduced and the productivity and the yield are improved.

Example 12. A semiconductor device manufacturing method according to Embodiment 12 of the present invention will be described with reference to FIG. 11 is a schematic sectional view showing a method for manufacturing a semiconductor device according to a twelfth embodiment of the present invention. The steps will be described below in accordance with the drawings.

As shown in FIG. 11A, a second insulating film 112 made of, for example, a silicon oxide film is formed on the front and back surfaces of the semiconductor film 1 and the inner walls of the through holes 2.

As shown in FIG. 11B, the second insulating film 112 is patterned according to the formation pattern of the diffusion layer 3. That is, the second insulating film 112 is etched by covering a portion other than the region where the diffusion layer 3 is formed with a resist (not shown).

As shown in FIG. 11C, in this state,
The diffusion layer 3 is formed by diffusing impurities such as phosphorus.

According to this method, it is not necessary to etch the semiconductor film 1 itself for patterning the diffusion layer 3, and the through hole 2 on the back surface is not damaged.
The diffusion layer 3 can be formed only on the peripheral edge of the opening. The second insulating film 112 uses a silicon oxide film formed by CVD, but it is convenient in terms of ease of formation and etching and compatibility with other processes. In this case, light etching is usually performed with diluted hydrofluoric acid before impurity diffusion, but the silicon oxide film is also etched at the same time. Therefore, the second insulating film 112
It is desirable that the thickness formed as is 1000 angstroms or more.

In order to obtain the structure shown in FIG. 10, thereafter, the insulating film 12 is provided on the front and back surfaces of the semiconductor film 1 and the inner wall of the through hole 2, and the diffusion layer 3 of the electrode 4 A connected to the diffusion layer 3 is provided. To the semiconductor film 1 of the contact part with the other electrode 4B
After the insulating film 12 is etched by covering a portion other than the contact portion with the resist, the electrode 4A and the other electrode 4B connected to the diffusion layer 3 are formed. As described above, the insulating film 12 at this time may be an antireflection film in the case of a solar cell.

Example 13 As described above, the diffusion layer 3 is provided on the front surface of the semiconductor film 1, the inner wall of the through hole 2 reaching from the front surface to the back surface, and the peripheral portion of the opening of the through hole 2 of the semiconductor film 1, and the electrode connected to the diffusion layer 3 is provided. 4 and the other electrode 4 are provided on the back surface side of the semiconductor film 1, a semiconductor device is manufactured. A current-voltage curve showing the performance when a solar cell is manufactured using this structure. FIG. 12 shows the fill factor of.

FIG. 12A shows the arrangement pattern of the through holes 2 in the case of a lattice pattern having a square as a minimum unit, and FIG. 12B shows the pattern having an equilateral triangle as a minimum unit. ing. In order to obtain a sufficiently excellent performance as a solar cell, a fill factor of about 0.78 or more is required. From this figure, however, in any case, the array pitch of the through holes 2 is required for that purpose. It is understood that it is necessary to have a resistance value of 1.5 mm or less and a resistance value between the front and back of the semiconductor film 1 of the through hole 2 of 10 Ω or less.

In each of the above embodiments, mainly,
Although the case where silicon is used as the material of the substrate 100 and the semiconductor film 1 has been described, another material may be used and the same effect is obtained.

[0122]

As described above, the semiconductor device according to the first aspect of the present invention has, on the surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. A diffusion layer is provided, in a semiconductor device having a structure in which both the electrode connected to the diffusion layer and the electrode of the other pole are provided on the back surface side of the semiconductor film,
Since the semiconductor film is covered with an insulating film except for the contact portion of the electrode connected to the diffusion layer to the diffusion layer and the contact portion of the electrode of the other pole to the semiconductor film, the region of the diffusion layer There is an effect that the area is small and the performance of the semiconductor device can be improved.

A semiconductor device according to claim 2 of the present invention is
As described above, since the insulating film is the antireflection film of the semiconductor device, when the solar cell is manufactured, the number of steps is reduced, and the productivity and the yield can be improved.

A semiconductor device according to claim 3 of the present invention is
As described above, since the through holes are arranged at a pitch of 1.5 mm or less, there is an effect that a sufficiently excellent performance as a solar cell can be obtained.

A semiconductor device according to claim 4 of the present invention is
As described above, the electric resistance of each through hole between the front and back surfaces of the semiconductor film is set to 10 Ω or less, so that it is possible to obtain a sufficiently excellent performance as a solar cell.

As described above, the method for manufacturing a semiconductor device according to a fifth aspect of the present invention is the method for manufacturing a semiconductor device, including the step of separating a semiconductor film formed on a substrate from the substrate. During the separation of, filling the water or aqueous solution between the semiconductor film and the substrate,
Since the semiconductor film is slid along the surface of the substrate to be separated, the semiconductor film can be easily separated without breaking and the yield and productivity can be improved.

As described above, the method for manufacturing a semiconductor device according to a sixth aspect of the present invention is a method for manufacturing a semiconductor device, which includes a step of separating a semiconductor film formed on a substrate from the substrate. Since the semiconductor film is separated from the substrate by etching the peeling layer between the semiconductor film and the semiconductor film with hydrofluoric acid heated to 50 ° C. or higher, the time required for etching can be shortened, and the yield and productivity can be improved. The effect of being able to improve.

As described above, in the method for manufacturing a semiconductor device according to claim 7 of the present invention, the first container is filled with an appropriate amount of hydrofluoric acid, and the second container is filled with an appropriate amount of water. Since the hydrofluoric acid in the first container is indirectly heated by placing the first container and heating the water in the second container, the hydrofluoric acid which is the strongest acid in the heating device is heated. It is possible to prevent the direct contact of hydro-acid and to reduce the amount of hydrofluoric acid to a necessary minimum to save the amount used.

As described above, in the method for manufacturing a semiconductor device according to claim 8 of the present invention, the separated semiconductor film has a thickness of 100 μm or less, and the semiconductor film has a mesh pitch of 0.5 mm or more and 2. With a mesh made of tetrafluoroethylene resin of 5 mm or less, sandwiched and held from the front and back,
Since it further includes a step of performing a wet process such as cleaning and etching, it can be handled without destroying the semiconductor film,
This has the effect of improving yield and productivity.

As described above, in the method for manufacturing a semiconductor device according to claim 9 of the present invention, the separated semiconductor film has a thickness of 100 μm or less, and the semiconductor film is held in a state of floating on the surface of water. However, since the step of transporting is further included, the semiconductor film can be handled without being destroyed, yield and productivity can be improved, and impurities are not contaminated.

As described above, the semiconductor device manufacturing method according to the tenth aspect of the present invention is directed to the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. In a method for manufacturing a semiconductor device, which comprises a step of providing a diffusion layer in the above, after forming an insulating film on the front surface, the back surface and the inner wall of the through hole, the insulating film in a region other than the region where the diffusion layer is to be provided is removed. To expose the semiconductor film, and the remaining insulating film is used as a mask to etch the semiconductor film to form the pattern of the diffusion layer. Therefore, the resist only needs to be formed on the back surface side of the semiconductor film. This has the effect of greatly improving the productivity and yield.

As described above, the method for manufacturing a semiconductor device according to an eleventh aspect of the present invention is directed to the front surface of the semiconductor film, the inner wall of the through hole reaching from the front surface to the back surface, and the periphery of the through hole on the back surface of the semiconductor film. In the method for manufacturing a semiconductor device, which comprises the step of providing a diffusion layer in the semiconductor device, after forming an insulating film on the front surface, the back surface and the inner wall of the through hole, the insulating film is removed according to a formation pattern of the diffusion layer to form the semiconductor. Since the film is exposed and the diffusion layer is formed by impurity diffusion, it is not necessary to etch the semiconductor film itself for patterning the diffusion layer, and the surface is not damaged, and only the periphery of the through hole opening on the back surface is diffused. The effect that a layer can be formed is produced.

As described above, in the method of manufacturing a semiconductor device according to a twelfth aspect of the present invention, since the insulating film is an antireflection film of the semiconductor device, in the case of a solar cell, the number of steps is reduced and the productivity is improved. With this, the yield can be improved.

As described above, in the method of manufacturing a semiconductor device according to a thirteenth aspect of the present invention, after the diffusion layer is formed and the remaining insulating film is removed, the front surface, the back surface and the inner wall of the through hole are formed. Another insulating layer is formed, and after the contact portion of the electrode connected to the diffusion layer to the diffusion layer and the contact portion of the electrode of the other electrode to the semiconductor film are removed, Since the method further includes the step of forming the electrode connected to the diffusion layer and the electrode of the other pole, it is possible to manufacture a device with excellent performance and improve the productivity and the yield.

As described above, in the method for manufacturing a semiconductor device according to the fourteenth aspect of the present invention, the insulating film is made of CV.
Since the silicon oxide film is deposited by the D method, there is an effect that etching and the like are easy and it is convenient in terms of compatibility with other processes.

As described above, in the method for manufacturing a semiconductor device according to the fifteenth aspect of the present invention, the thickness of the silicon oxide film is set to 1000 angstroms or more.
There is an effect that it is not etched by light etching performed before the diffusion of impurities.

As described above, the semiconductor device manufacturing apparatus according to the sixteenth aspect of the present invention is a semiconductor device manufacturing apparatus for separating a semiconductor film formed on a substrate from the substrate, wherein the semiconductor film is A first region having a size capable of accommodating the attached substrate and a second region having a size capable of accommodating only the semiconductor film;
Since the step is provided between the first region and the second region, there is an effect that the semiconductor film can be separated without breaking.

As described above, in the semiconductor device manufacturing apparatus according to the seventeenth aspect of the present invention, the first and second regions are positioned horizontally through the step, and the step is defined by the thickness of the substrate. Since it is small and is larger than half the thickness of the substrate, the semiconductor film can be easily separated without breaking.

As described above, in the semiconductor device manufacturing apparatus according to the eighteenth aspect of the present invention, the first region is
A second space in which the thickness of the space is larger than the thickness of the substrate and the semiconductor film, and the second region has a second space in which the thickness of the space is smaller than the thickness of the substrate and larger than the thickness of the semiconductor film. Since it is a space and the first and second spaces are positioned vertically, there is an effect that the semiconductor film can be easily separated without breaking.

As described above, in the semiconductor device manufacturing apparatus according to the nineteenth aspect of the present invention, the first region is
A first space having a width greater than that of the substrate;
Since the second region is a second space in which the width of the space is smaller than the width of the substrate and larger than the width of the semiconductor film, and the first and second spaces are vertically positioned, The semiconductor film can be easily separated without breaking it.

As described above, in the semiconductor device manufacturing apparatus according to the twentieth aspect of the present invention, the first hermetically sealed container filled with hydrofluoric acid and the second hermetically sealed container for accommodating the first hermetically sealed container are provided. Since the closed container, the heating device that heats the first closed container, and the temperature control device that controls the heating device to a constant temperature are provided, hydrofluoric acid, which is the strongest acid, is in direct contact with the heating device. It is possible to prevent this, and to bring the effect that the amount of hydrofluoric acid can be minimized and the amount used can be saved.

As described above, the semiconductor device manufacturing apparatus according to the twenty-first aspect of the present invention is a semiconductor device manufacturing apparatus for wet processing a semiconductor film, wherein the mesh pitch is 0.5 mm or more and 2.5 mm or less. Wet treatment is performed with the semiconductor film having a thickness of 100 μm or less sandwiched between the two meshes made of tetrafluoroethylene resin from the front and back, so that the semiconductor film can be handled without being damaged, and the yield and productivity can be improved. The effect of being able to improve.

As described above, the semiconductor device manufacturing apparatus according to the twenty-second aspect of the present invention is a semiconductor device manufacturing apparatus for moving and transporting a semiconductor film. Since the tetrafluoroethylene resin mesh for scooping up the semiconductor film having a thickness of 100 μm or less and accommodating it in the cassette is provided, the semiconductor film can be handled without being destroyed, and the yield and the productivity can be improved.

[Brief description of drawings]

FIG. 1 is a diagram showing a method of manufacturing a semiconductor device according to a first embodiment of the invention.

FIG. 2 is a schematic sectional view showing a semiconductor device manufacturing apparatus according to a second embodiment of the present invention.

FIG. 3 is a schematic sectional view showing a semiconductor device manufacturing apparatus according to a third embodiment of the present invention.

FIG. 4 is a schematic front view showing a semiconductor device manufacturing apparatus according to Embodiment 4 of the present invention.

FIG. 5 is a schematic cross-sectional view showing a semiconductor device manufacturing apparatus according to Embodiment 6 of the present invention.

FIG. 6 is a schematic view showing a semiconductor device manufacturing apparatus according to a seventh embodiment of the present invention.

FIG. 7 is a schematic view showing a method for manufacturing a semiconductor device according to an eighth embodiment of the present invention.

FIG. 8 is a schematic diagram showing a semiconductor device manufacturing apparatus according to a ninth embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view showing the method for manufacturing the semiconductor device according to the tenth embodiment of the present invention.

FIG. 10 is a diagram showing a semiconductor device according to an eleventh embodiment of the present invention.

FIG. 11 is a schematic sectional view showing a method for manufacturing a semiconductor device according to a twelfth embodiment of the present invention.

FIG. 12 is a diagram showing a current-voltage characteristic curve of a semiconductor device according to Embodiment 13 of the present invention.

FIG. 13 is a schematic view showing a conventional method for manufacturing a semiconductor device.

FIG. 14 is a schematic diagram showing a conventional method for manufacturing a semiconductor device.

FIG. 15 is a diagram showing a conventional semiconductor device manufacturing apparatus.

FIG. 16 is a diagram showing a conventional semiconductor device manufacturing apparatus.

FIG. 17 is a diagram showing a conventional method for manufacturing a semiconductor device.

FIG. 18 is a diagram showing a conventional semiconductor device.

[Explanation of symbols]

1 semiconductor film, 2 through holes, 3 diffusion layers, 4A, 4B
Electrode, 10 peeling layer, 11 water, 12 insulating film, 21
1st area | region, 22 2nd area | region, 31 and 31A 1st space, 32 and 32A 2nd space, 61 4 Fluoroethylene resin mesh, 100 board | substrates, 112 2nd insulating film.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display location H01L 31/04 E

Claims (22)

[Claims] 1. A diffusion layer is provided around the front surface of the semiconductor film, the inner wall of the through hole reaching the back surface from the front surface, and the periphery of the through hole on the back surface of the semiconductor film, and an electrode connected to the diffusion layer and In a semiconductor device having a structure in which both electrodes of the other pole are provided on the back surface side of the semiconductor film, a contact portion of the electrode connected to the diffusion layer to the diffusion layer and the semiconductor of the electrode of the other pole A semiconductor device, wherein the semiconductor film is covered with an insulating film except for a contact portion with the film. 2. The semiconductor device according to claim 1, wherein the insulating film is an antireflection film of a semiconductor device. 3. The semiconductor device according to claim 1, wherein the through holes are arranged at a pitch of 1.5 mm or less. 4. The semiconductor device according to claim 1, wherein each of the through holes between the front and back surfaces of the semiconductor film has an electric resistance of 10 Ω or less. 5. A method of manufacturing a semiconductor device, which comprises a step of separating a semiconductor film formed on a substrate from the substrate, wherein water or a water is introduced between the semiconductor film and the substrate when the semiconductor film is separated. A method of manufacturing a semiconductor device, which comprises filling an aqueous solution and sliding the semiconductor film along the surface of the substrate to separate the semiconductor film. 6. A method of manufacturing a semiconductor device, which comprises a step of separating a semiconductor film formed on a substrate from the substrate, wherein a peeling layer between the substrate and the semiconductor film is 50 ° C.
A method for manufacturing a semiconductor device, characterized in that the semiconductor film is separated from the substrate by etching with hydrofluoric acid heated as described above. 7. The first container is filled with an appropriate amount of hydrofluoric acid,
By filling the second container with an appropriate amount of water, putting the first container therein, and heating the water in the second container,
7. The method of manufacturing a semiconductor device according to claim 6, wherein the hydrofluoric acid in the first container is indirectly heated. 8. The separated semiconductor film has a thickness of 100 μm.
m or less, and a step of performing a wet treatment such as cleaning or etching while sandwiching and holding the semiconductor film with a mesh made of tetrafluoroethylene resin having a mesh pitch of 0.5 mm or more and 2.5 mm or less from the front and back sides. 8. The method of manufacturing a semiconductor device according to claim 5, further comprising: 9. The separated semiconductor film has a thickness of 100 μm.
8. The method for manufacturing a semiconductor device according to claim 5, further comprising a step of holding the semiconductor film in a state of being floated on the surface of water and carrying it. 10. A method of manufacturing a semiconductor device, comprising the steps of providing a front surface of a semiconductor film, an inner wall of a through hole reaching the back surface from the front surface, and a diffusion layer around the through hole on the back surface of the semiconductor film, After forming an insulating film on the back surface and the inner wall of the through hole, the insulating film in a region other than the region where the diffusion layer is to be provided is removed to expose the semiconductor film,
A method of manufacturing a semiconductor device, wherein the pattern of the diffusion layer is formed by etching the semiconductor film using the remaining insulating film as a mask. 11. A method of manufacturing a semiconductor device, comprising the steps of providing a front surface of a semiconductor film, an inner wall of a through hole reaching from the front surface to a back surface, and a diffusion layer around the through hole on the back surface of the semiconductor film, After forming an insulating film on the back surface and the inner wall of the through hole, the insulating film is removed according to the formation pattern of the diffusion layer to expose the semiconductor film, and the diffusion layer is formed by impurity diffusion. Manufacturing method of semiconductor device. 12. The method of manufacturing a semiconductor device according to claim 10, wherein the insulating film is an antireflection film of a semiconductor device. 13. The diffusion layer is formed, and after the remaining insulating film is removed, another insulating layer is formed on the front surface, the back surface and the inner wall of the through hole to diffuse an electrode connected to the diffusion layer. A step of forming an electrode connected to the diffusion layer and an electrode of the other pole after removing the other insulating film in the contact portion to the layer and the contact portion to the semiconductor film of the electrode of the other pole 12. The method of manufacturing a semiconductor device according to claim 10, further comprising: 14. The insulating film is a silicon oxide film deposited by a CVD method.
1. The method for manufacturing a semiconductor device according to 1. 15. The silicon oxide film has a thickness of 100.
15. The method of manufacturing a semiconductor device according to claim 14, wherein the thickness is 0 angstrom or more. 16. A semiconductor device manufacturing apparatus for separating a semiconductor film formed on a substrate from the substrate,
A first region having a size capable of accommodating the substrate to which the semiconductor film is attached and a second region having a size capable of accommodating only the semiconductor film; An apparatus for manufacturing a semiconductor device, wherein a step is provided between the two regions. 17. The first and second regions are located horizontally via the step, and the step is less than the thickness of the substrate and more than half the thickness of the substrate. Item 16. A semiconductor device manufacturing apparatus according to Item 16. 18. The first region is a first space having a space thickness larger than the thickness of the substrate and the semiconductor film, and the second region has a space thickness smaller than the thickness of the substrate. 17. The apparatus for manufacturing a semiconductor device according to claim 16, wherein the second space is larger than the thickness of the semiconductor film, and the first and second spaces are vertically positioned. 19. The first region is a first space having a space width larger than that of the substrate, and the second region has a space width smaller than that of the substrate and the semiconductor. 17. The semiconductor device manufacturing apparatus according to claim 16, wherein the second space is larger than the width of the film, and the first and second spaces are vertically positioned. 20. A first closed container filled with hydrofluoric acid, a second closed container for containing the first closed container, a heating device for heating the first closed container, and the heating device. An apparatus for manufacturing a semiconductor device, comprising a temperature control device for controlling the temperature of the semiconductor device to a constant temperature. 21. In a semiconductor device manufacturing apparatus for wet-processing a semiconductor film, a mesh pitch is 0.5 mm.
As described above, the apparatus for manufacturing a semiconductor device is characterized in that the wet treatment is performed in a state where a semiconductor film having a thickness of 100 μm or less is sandwiched and held between two 2.5 mm or less meshes of tetrafluoroethylene resin from both sides. 22. In a semiconductor device manufacturing apparatus for moving and transporting a semiconductor film, tetrafluoroethylene for scooping up a semiconductor film having a thickness of 100 μm or less held in a state of floating on the surface of water and accommodating it in a cassette. A semiconductor device manufacturing apparatus comprising a resin mesh.