JPH08316644A - Manufacture of electronic part - Google Patents
Manufacture of electronic partInfo
- Publication number
- JPH08316644A JPH08316644A JP7115522A JP11552295A JPH08316644A JP H08316644 A JPH08316644 A JP H08316644A JP 7115522 A JP7115522 A JP 7115522A JP 11552295 A JP11552295 A JP 11552295A JP H08316644 A JPH08316644 A JP H08316644A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- case
- functional element
- electronic component
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Casings For Electric Apparatus (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はケース内に電気的機能素
子を収納した電子部品の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic component having a case in which an electric functional element is housed.
【0002】[0002]
【従来の技術】弾性表面波素子やCCD撮像デバイス等
の電気的機能素子は、環境による劣化や特性変動を抑制
するために金属製や、セラミック製のケース内に収納さ
れていた。またケースには貫通孔を設け、この貫通孔を
介して端子の一端をケース外に引出し、この端子の他端
はケース内において電気的機能素子に電気的に接続して
いた。2. Description of the Related Art Electrically functional devices such as surface acoustic wave devices and CCD image pickup devices have been housed in metal or ceramic cases in order to suppress deterioration and characteristic fluctuations due to the environment. Further, a through hole is provided in the case, one end of the terminal is drawn out of the case through the through hole, and the other end of the terminal is electrically connected to the electric functional element in the case.
【0003】[0003]
【発明が解決しようとする課題】従来のものは、ケース
の貫通孔から端子の一端を引出すものであるが、この貫
通孔部分における気密性が問題となっていた。すなわ
ち、貫通孔と端子との間には必ず隙間が形成され、この
隙間からケース内へ湿気等が浸入し、電気的機能素子の
劣化や特性変動を生じさせてしまうのであった。In the conventional device, one end of the terminal is pulled out from the through hole of the case, but the airtightness at this through hole portion has been a problem. That is, a gap is always formed between the through hole and the terminal, and moisture or the like penetrates into the case through the gap, which causes deterioration of the electrical functional element and characteristic changes.
【0004】そこで本発明は電気的機能素子の劣化や特
性変動を生じさせないような気密構造を得ることを目的
とするものである。Therefore, an object of the present invention is to obtain an airtight structure which does not cause deterioration of an electric functional element or characteristic variation.
【0005】[0005]
【課題を解決するための手段】そしてこの目的を達成す
るために本発明は、少なくとも一面に開口部を有したケ
ース内に、電気的機能素子を配置し、その後、前記ケー
スの開口部にフタを接着し、次に電気的機能素子を内蔵
した前記ケースを真空中に置き、前記ケースまたはフタ
に設けた貫通孔の内周縁およびこの貫通孔に臨む前記電
気的機能素子の電極取り出し部上に電極膜を形成し、そ
の後前記貫通孔中に金、ハンダ、Sn、Inの少なくと
も一つを、線材、球状、棒状、塊状、溶融状態のいずれ
かの状態で供給して封孔するとともに、前記電極膜と接
合して電子部品を製造するものである。In order to achieve this object, according to the present invention, an electrically functional element is arranged in a case having an opening on at least one surface, and then a lid is provided in the opening of the case. Then, the case containing the electric functional element is placed in a vacuum, and the inner peripheral edge of the through hole provided in the case or the lid and the electrode lead-out portion of the electric functional element facing the through hole are attached. An electrode film is formed, and then at least one of gold, solder, Sn, and In is supplied into the through hole in any one of a wire, a spherical shape, a rod shape, a lump shape, and a molten state to seal the hole. An electronic component is manufactured by joining with an electrode film.
【0006】[0006]
【作用】以上の製造方法によれば、電気的機能素子を収
納したケースを真空中に配置した状態で、ケース、また
はフタに設けた貫通孔の内周縁およびこの貫通孔に臨む
電気的機能素子の電極取り出し部上に電極膜を形成後に
金、ハンダ、Sn、またはInあるいはこれらの合金材
料で封孔するので、ケース内の気密が保たれ、電気的機
能素子の劣化や特性変動が生じなくなるのである。According to the above manufacturing method, the inner peripheral edge of the through hole formed in the case or the lid and the electric functional element facing the through hole in a state where the case accommodating the electric functional element is placed in a vacuum. After the electrode film is formed on the electrode extraction part of the device, the hole is sealed with gold, solder, Sn, In, or an alloy material thereof, so that airtightness in the case is maintained, and deterioration or characteristic fluctuation of the electrical functional element does not occur. Of.
【0007】またこの封孔体により電気的機能素子の電
極取り出し部をケース外に電気的に引出すこともでき、
製造しやすいものとなる。Further, the sealing member can electrically draw the electrode lead-out portion of the electric functional element out of the case,
It is easy to manufacture.
【0008】[0008]
【実施例】以下、本発明の実施例について説明する。Embodiments of the present invention will be described below.
【0009】(実施例1)図1に本発明の第1の実施例
により作成した電子部品の断面構造を示す。本実施例で
は電気的機能素子として弾性表面波素子を用いた。同図
において、1はガラス板製の上フタ、2はその一端開口
部に上フタ1がガラス同士の直接接合で固定された枠状
のケースである。3は2ヶ所の貫通孔6を設けたガラス
板製の下フタで、ガラス同士の直接接合によりケース2
の他端開口部に固定されている。4は弾性表面波素子
で、4aは貫通孔6と一致させて配置した取り出し電
極、4bはIDT(インターディジタルトランスデュー
サ)電極である。5a,5bは弾性表面波素子4をケー
ス2、上、下フタ1,3内を封止配置、封止後に真空中
でスパッタリングにより形成したメタライズ電極膜、6
aは取り出し電極と接続のためのAu製の封孔体、7は
プリント基板への半田接続を行うために設けた印刷電極
である。以下、図2から図6を用いて、本実施例の製造
方法を詳細に述べる。なお、図1と同一名称については
同一番号を付した。本実施例については、上フタ1、ケ
ース2、下フタ3ともにガラスを用い、下フタ3の所定
の位置に貫通孔6を設けた後にケース2を置き、弾性表
面波素子4を、その取り出し電極部4aが貫通孔6とほ
ぼ一致するように配置し、その後上フタ1を置いて密着
させた後、加熱することで上フタ1、ケース2と下フタ
3との接合部30a,30bをガラス同士の直接接合に
より接合した。この時の加熱温度は300℃、5分間と
した。次に、図3に示すように弾性表面波素子4を内部
に配置した封止構造体を下フタ3側が下面になるように
真空装置にセットし、スパッタリングで最下層にTi
膜、次にCu膜、最上層にAu膜を同一真空中で連続的
に形成し、メタライズ電極膜5a,5bを設けた。それ
ぞれの膜厚はTi膜が100nm、Cu膜が2μm、A
u膜を500nmとした。この時、封止構造体の貫通孔
6側が下向きになるように真空装置にセットしたこと
で、弾性表面波素子4の取り出し電極4a部が貫通孔6
部とほぼ密着するようになり、スパッタリング成膜時に
スパッタ金属原子がIDT電極4bに回り込むのを防止
した。メタライズ電極膜5a,5bを形成後、図4に示
すように下フタ3の板厚よりやや長いAu線を貫通孔6
内に差し込み、押え板8で加圧保持した。次に図5に示
すように押え板8と封止構造体を約400℃に加熱し
て、取り出し電極4aと貫通孔6内のメタライズ電極膜
5a,5bとをAu−Au接合による接合を行った。こ
の場合、400℃に加熱しても封止構造体には接着樹脂
等は全く無いためにガス放出等の問題は生じない。その
後、プリント基板との接合のためにCuペーストを印刷
形成して印刷電極7を形成した。最後に、下フタ3部に
形成された不要なメタライズ電極膜5a,5b部をエッ
チング除去して図1に示す構成が作成された。本実施例
では、メタライズ電極膜5a,5bは下フタ3全面に形
成したが、マスクを用いて必要な部分のみに形成するこ
とも可能であり、その場合には不要なメタライズ電極膜
5a,5bのエッチング工程は必要なくなる。また、本
実施例では封孔体6aを形成するものとしてAu線を用
いてAu−Au接合を行ったが、半田、SnまたはIn
あるいはこれらの合金を用いて、半田接合やAu−Sn
接合等の手段を用いることも可能である。その場合、メ
タライズ電極膜5a,5bの材料も接合手段に合わせて
適宜変更する。(Embodiment 1) FIG. 1 shows a sectional structure of an electronic component prepared according to a first embodiment of the present invention. In this example, a surface acoustic wave element was used as the electrical functional element. In the figure, reference numeral 1 is an upper lid made of a glass plate, and 2 is a frame-shaped case in which the upper lid 1 is fixed to the opening at one end thereof by directly joining the glasses together. 3 is a lower lid made of a glass plate having two through holes 6 formed therein.
Is fixed at the other end opening. Reference numeral 4 is a surface acoustic wave element, 4a is an extraction electrode which is arranged so as to coincide with the through hole 6, and 4b is an IDT (interdigital transducer) electrode. Reference numerals 5a and 5b denote metallized electrode films formed by sealing the surface acoustic wave element 4 in the case 2, the upper and lower lids 1 and 3, and forming the surface acoustic wave element 4 by sputtering in vacuum after sealing.
Reference numeral a is a sealing member made of Au for connection with the take-out electrode, and reference numeral 7 is a printed electrode provided for solder connection to the printed board. Hereinafter, the manufacturing method of the present embodiment will be described in detail with reference to FIGS. Note that the same numbers as in FIG. 1 are given the same numbers. In this embodiment, glass is used for the upper lid 1, the case 2 and the lower lid 3, the through hole 6 is provided at a predetermined position of the lower lid 3 and then the case 2 is placed, and the surface acoustic wave element 4 is taken out. The electrode portion 4a is arranged so as to substantially coincide with the through hole 6, and then the upper lid 1 is placed and brought into close contact with the through hole 6, and then the upper lid 1 and the joint portions 30a and 30b between the case 2 and the lower lid 3 are heated. It joined by direct joining of glasses. The heating temperature at this time was 300 ° C. for 5 minutes. Next, as shown in FIG. 3, the sealing structure in which the surface acoustic wave element 4 is arranged is set in a vacuum device so that the lower lid 3 side is the lower surface, and sputtering is performed to form Ti as the lowermost layer.
A film, then a Cu film, and an Au film as the uppermost layer were successively formed in the same vacuum to provide metallized electrode films 5a and 5b. The thickness of each film is 100 nm for Ti film, 2 μm for Cu film, and A
The u film has a thickness of 500 nm. At this time, by setting the vacuum device so that the through hole 6 side of the sealing structure faces downward, the take-out electrode 4a portion of the surface acoustic wave element 4 is inserted into the through hole 6
It became almost in close contact with the portion, and sputtered metal atoms were prevented from wrapping around around the IDT electrode 4b during sputtering film formation. After forming the metallized electrode films 5a and 5b, as shown in FIG. 4, an Au wire slightly longer than the plate thickness of the lower lid 3 is formed in the through hole 6
It was inserted into the inside and was pressed and held by the holding plate 8. Next, as shown in FIG. 5, the holding plate 8 and the sealing structure are heated to about 400 ° C., and the extraction electrode 4a and the metallized electrode films 5a and 5b in the through hole 6 are joined by Au-Au joining. It was In this case, even if the sealing structure is heated to 400 ° C., there is no adhesive resin or the like in the sealing structure, so that problems such as gas release do not occur. After that, a Cu paste was formed by printing to form a printed electrode 7 for bonding to a printed board. Finally, unnecessary metallized electrode films 5a and 5b formed on the lower lid 3 were removed by etching to form the structure shown in FIG. In the present embodiment, the metallized electrode films 5a and 5b are formed on the entire surface of the lower lid 3, but it is also possible to form only the necessary portions by using a mask. In that case, the unnecessary metallized electrode films 5a and 5b are formed. The etching step is unnecessary. Further, in the present embodiment, Au-Au bonding was performed using Au wire as the material for forming the sealing body 6a, but solder, Sn or In was used.
Alternatively, using these alloys, solder bonding or Au-Sn
It is also possible to use means such as joining. In that case, the materials of the metallized electrode films 5a and 5b are also appropriately changed according to the joining means.
【0010】(実施例2)図7を用いて本発明の第2の
実施例により作成する方式を説明する。図7において図
1と同一名称については同一番号を付している。本実施
例では第1の実施例と同じく上フタ1、ケース2と下フ
タ3はガラスを用いて直接接合によりパッケージ封止を
行った。メタライズ電極膜5a,5bはメタルマスクを
用いて必要部分のみに形成した。メタライズ電極5a,
5bの形成材料は最下層にTi膜(100nm)、次に
Ni膜(1μm)、最上層にSn膜(1μm)をスパッ
タリングで成膜した。この後、図7に示すようにPbを
主成分とする高温半田10を加熱し溶融させたディスペ
ンサ9を貫通孔6部に位置合わせして、適量を貫通孔6
部に注入して弾性表面波素子4の取り出し電極部4a上
のメタライズ電極膜5aと下フタ3上のメタライズ電極
膜5bの両方に半田10で接合を行った。この時、封止
構造体は約250℃に加熱し、非酸化性雰囲気の中で行
った。このようにして貫通孔6部を半田10で埋め込ん
だ後は、第1の実施例と同じくCuペーストを用いて印
刷電極7を形成して完成したが、第1の実施例と同一で
あるので本実施例では図示していない。本実施例ではメ
タライズ電極5a,5bとしてSn/Ni/Tiを用い
たが、Au/Cu/Ti構成や、Cu/Ti構成でも可
能であり、電極構成は本実施例に限定されるものではな
く、半田材料との最適な組み合わせを選ぶことが可能で
ある。(Embodiment 2) Referring to FIG. 7, description will be given of a method of making according to the second embodiment of the present invention. 7, the same numbers as those in FIG. 1 are given the same numbers. In this embodiment, as in the first embodiment, the upper lid 1, the case 2 and the lower lid 3 are made of glass, and the package is sealed by direct bonding. The metallized electrode films 5a and 5b were formed only on the necessary portions by using a metal mask. Metallized electrode 5a,
As a material for forming 5b, a Ti film (100 nm) was formed on the lowermost layer, a Ni film (1 μm) was formed on the lowermost layer, and a Sn film (1 μm) was formed on the uppermost layer by sputtering. Thereafter, as shown in FIG. 7, the dispenser 9 obtained by heating and melting the high-temperature solder 10 containing Pb as a main component is aligned with the through-hole 6 portion, and an appropriate amount of the through-hole 6 is formed.
Then, solder 10 was applied to both the metallized electrode film 5a on the extraction electrode portion 4a of the surface acoustic wave element 4 and the metallized electrode film 5b on the lower lid 3. At this time, the sealing structure was heated to about 250 ° C. and performed in a non-oxidizing atmosphere. After filling the through holes 6 with the solder 10 in this way, the printed electrode 7 was formed by using the Cu paste as in the first embodiment and completed, but it is the same as in the first embodiment. Not shown in this embodiment. Although Sn / Ni / Ti is used as the metallized electrodes 5a and 5b in this embodiment, an Au / Cu / Ti structure or a Cu / Ti structure is also possible, and the electrode structure is not limited to this embodiment. It is possible to select the optimum combination with the solder material.
【0011】また、本実施例では上フタ1、ケース2、
下フタ3の接合一体化はガラスを用いた直接接合方式の
例を示したが、これら三者を半田接合やガラスによる接
合方式で接合一体化することも接合温度と貫通孔6部の
接合温度を充分に配慮することで使用できる。In this embodiment, the upper lid 1, the case 2,
Although the example of the direct joining method using glass is shown as the joining and unifying of the lower lid 3, the joining temperature and the joining temperature of the through-hole 6 part can be obtained by joining and unifying these three members by the solder joining method or the joining method by glass. It can be used with due consideration.
【0012】(実施例3)図8を用いて本発明の第3の
実施例により作成する方法を説明する。本実施例では上
フタ11と一面にだけ開口部を有するケース12はセラ
ミックで作成した。そしてその内部に表面弾性波フィル
ター14を取り出し電極14aと上フタ11に形成した
貫通孔11b部とをほぼ一致させて配置し、上フタ11
とケース12とを図示してはいないが低融点のガラス材
料で約430℃に加熱して接合部13を接合封止した。
次に、上記した第1の実施例と同様に真空装置中にセッ
トして、メタライズ電極5a,5bを形成した。本実施
例のメタライズ電極膜5a,5bは、最下層にCr膜
(100nm)、次にAg膜(5μm)を形成した。こ
の後、図8に示すように、形状記憶合金よりなる棒状物
を貫通孔11b内部に差し込み、所定の温度に加熱する
ことで形状記憶合金が本来記憶していた形状に変形し、
取り出し電極との接続と封止が実現される封孔体15と
なる。形状記憶合金の形状変化を図9と図10を用いて
説明する。図9は形状記憶合金よりなる棒状体を貫通孔
11b内部に挿入した状態を示す。形状記憶合金よりな
る棒状体は初期の形状として、図10に示すようにメタ
ライズ電極膜5bの膜厚を含む貫通孔11b部よりやや
大きい直径Hを記憶させておく。この後、図9に示すよ
うに貫通孔11b部よりやや小さな直径hになるように
機械的に変形させてやる。この状態では、貫通孔11b
部よりやや小さな直径hを有しているので、簡単に貫通
孔11b内部に差し込むことができる。複数の貫通孔1
1b部全部に棒状の形状記憶合金を差し込んだ後、上フ
タ11とケース12よりなる封止構造体全体を、形状記
憶合金のマルテンサイト変態点温度以上に加熱すること
で、形状記憶合金は初期の形状に戻る。この時、形状記
憶合金の直径は貫通孔11b部の径よりやや大きく形状
記憶していることから形状記憶合金はメタライズ電極5
bにくい込み、またメタライズ電極膜5aを介して取り
出し電極14aとの接続と封止が同時に完了する。この
時、メタライズ電極膜5bはパッキングの役割をし、メ
タライズ電極膜5bを形成しない場合に比べてより完全
な封止が達成された。また、取り出し電極14aとの接
触もメタライズ電極膜5aにより圧力が緩和されて弾性
表面波フィルター14に余計な変形力が加わらず周波数
特性に異常が生じないことが確認された。この方式の接
続は機械的な接触で行われるが、形状記憶合金の変形能
力は大きく、かつ、一度復元したらその形状を維持する
ことから、貫通孔11b部には常に形状記憶合金から圧
力を受けることになり信頼性の高い接続が可能である。
形状記憶合金材料としては、Ni・Ti合金が形状記憶
作用としては最も強く望ましいが、Ag・Cd合金、C
u・Al・Ni合金、Cu・Au・Zn合金、Cu・S
n合金、Cu・Zn合金またはNi・Al合金等も使用
可能である。(Embodiment 3) A method of making a film according to the third embodiment of the present invention will be described with reference to FIG. In this embodiment, the upper lid 11 and the case 12 having an opening only on one surface are made of ceramic. Then, the surface acoustic wave filter 14 is disposed inside the electrode 14a and the through hole 11b formed in the upper lid 11 so as to substantially coincide with each other.
Although not shown, the case 12 was heated to about 430 ° C. with a glass material having a low melting point to bond and seal the bonding portion 13.
Then, the metallized electrodes 5a and 5b were formed by setting in a vacuum apparatus as in the first embodiment described above. In the metallized electrode films 5a and 5b of this example, a Cr film (100 nm) was formed on the lowermost layer, and then an Ag film (5 μm) was formed. Thereafter, as shown in FIG. 8, a rod-shaped material made of a shape memory alloy is inserted into the through hole 11b and heated to a predetermined temperature, whereby the shape memory alloy is transformed into the shape originally memorized,
The sealing body 15 realizes the connection with the extraction electrode and the sealing. The shape change of the shape memory alloy will be described with reference to FIGS. 9 and 10. FIG. 9 shows a state where a rod-shaped body made of a shape memory alloy is inserted into the through hole 11b. As the initial shape of the rod-shaped body made of a shape memory alloy, as shown in FIG. 10, a diameter H slightly larger than that of the through hole 11b portion including the film thickness of the metallized electrode film 5b is stored. After that, as shown in FIG. 9, mechanical deformation is performed so that the diameter h becomes slightly smaller than that of the through hole 11b. In this state, the through hole 11b
Since the diameter h is slightly smaller than that of the portion, it can be easily inserted into the through hole 11b. Multiple through holes 1
After the rod-shaped shape memory alloy is inserted into the entire 1b portion, the entire sealing structure including the upper lid 11 and the case 12 is heated to a temperature above the martensite transformation point of the shape memory alloy, whereby the shape memory alloy is initially formed. Return to the shape of. At this time, since the diameter of the shape memory alloy is slightly larger than the diameter of the through-hole 11b, the shape memory alloy is shaped into a metallized electrode 5.
In addition, the connection with the extraction electrode 14a and the sealing via the metallized electrode film 5a are completed at the same time. At this time, the metallized electrode film 5b plays a role of packing, and more complete sealing is achieved as compared with the case where the metallized electrode film 5b is not formed. Further, it was confirmed that the contact with the extraction electrode 14a was also relieved of the pressure by the metallized electrode film 5a, so that the surface acoustic wave filter 14 was not subjected to an excessive deformation force and the frequency characteristic was not abnormal. Although this type of connection is performed by mechanical contact, the shape memory alloy has a large deformation capacity and maintains its shape once restored, so that the through hole 11b is always subjected to pressure from the shape memory alloy. As a result, highly reliable connection is possible.
As a shape memory alloy material, a Ni / Ti alloy is the most desirable for its shape memory effect, but an Ag / Cd alloy or a C
u ・ Al ・ Ni alloy, Cu ・ Au ・ Zn alloy, Cu ・ S
An n alloy, a Cu.Zn alloy, a Ni.Al alloy, or the like can also be used.
【0013】[0013]
【発明の効果】以上のように本発明は少なくとも一面に
開口部を有したケース内に、電気的機能素子を配置し、
その後、前記ケースの開口部にフタを接着し、次に電気
的機能素子を内蔵した前記ケースを真空中に置き、前記
ケースまたはフタに設けた貫通孔の内周縁およびこの貫
通孔に臨む前記電気的機能素子の電極取り出し部上に電
極膜を形成し、その後前記貫通孔中に金、ハンダ、S
n、Inの少なくとも一つを、線材、球状、棒状、塊
状、溶融状態のいずれかの状態で供給して封孔するとと
もに、前記電極膜と接合して電子部品を製造するもので
ある。As described above, according to the present invention, an electrically functional element is arranged in a case having an opening on at least one surface,
Then, a lid is adhered to the opening of the case, the case containing the electrically functional element is then placed in a vacuum, and the inner peripheral edge of the through hole provided in the case or the lid and the electrical contact facing the through hole are formed. An electrode film on the electrode lead-out portion of the functionally functional element, and then gold, solder, S
At least one of n and In is supplied in the state of a wire, a sphere, a rod, a lump, or a molten state to seal the hole, and is bonded to the electrode film to manufacture an electronic component.
【0014】そして以上の製造方法によれば、電気的機
能素子を収納したケースを真空中に配置した状態で、ケ
ース、またはフタに設けた貫通孔の内周縁およびこの貫
通孔に臨む電気的機能素子の電極取り出し部上に電極膜
を形成後に金、ハンダ、Sn、またはInあるいはこれ
らの合金材料で封孔するので、ケース内の気密が保た
れ、電気的機能素子の劣化や特性変動が生じなくなるの
である。According to the above-mentioned manufacturing method, the inner peripheral edge of the through hole provided in the case or the lid and the electrical function facing the through hole in a state where the case accommodating the electrically functional element is placed in a vacuum. After forming the electrode film on the electrode lead-out portion of the element, the hole is sealed with gold, solder, Sn, In, or an alloy material thereof, so that airtightness is maintained in the case, and deterioration or characteristic fluctuation of the electric functional element occurs. It will disappear.
【0015】またこの封孔体により電気的機能素子の電
極取り出し部をケース外に電気的に引出すこともでき、
製造しやすいものとなる。Further, the sealing member can electrically draw out the electrode take-out portion of the electric functional element to the outside of the case,
It is easy to manufacture.
【図1】本発明の第1の実施例により製造された電子部
品の断面図FIG. 1 is a sectional view of an electronic component manufactured according to a first embodiment of the present invention.
【図2】同第1の実施例の製造工程を示す断面図FIG. 2 is a sectional view showing a manufacturing process of the first embodiment.
【図3】同第1の実施例の製造工程を示す断面図FIG. 3 is a sectional view showing a manufacturing process of the first embodiment.
【図4】同第1の実施例の製造工程を示す断面図FIG. 4 is a sectional view showing a manufacturing process of the first embodiment.
【図5】同第1の実施例の製造工程を示す断面図FIG. 5 is a sectional view showing the manufacturing process of the first embodiment.
【図6】同第1の実施例の製造工程を示す断面図FIG. 6 is a cross-sectional view showing the manufacturing process of the first embodiment.
【図7】本発明の第2の実施例の製造工程を示す断面図FIG. 7 is a cross-sectional view showing the manufacturing process of the second embodiment of the present invention.
【図8】本発明の第3の実施例の製造工程を示す断面図FIG. 8 is a cross-sectional view showing the manufacturing process of the third embodiment of the present invention.
【図9】同第3の実施例の製造工程を示す断面図FIG. 9 is a cross-sectional view showing the manufacturing process of the third embodiment.
【図10】同第3の実施例の製造工程を示す断面図FIG. 10 is a sectional view showing a manufacturing process of the third embodiment.
1 上フタ 2 ケース 3 下フタ 4 弾性表面波素子 5a メタライズ電極膜 5b メタライズ電極膜 6 貫通孔 6a 封孔体 7 印刷電極 1 Upper Lid 2 Case 3 Lower Lid 4 Surface Acoustic Wave Element 5a Metallized Electrode Film 5b Metallized Electrode Film 6 Through Hole 6a Sealing Body 7 Printed Electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高橋 宗子 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Souko Takahashi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (8)
内に、電気的機能素子を配置し、その後、前記ケースの
開口部にフタを接着し、次に電気的機能素子を内蔵した
前記ケースを真空中に置き、前記ケースまたはフタに設
けた貫通孔の内周縁およびこの貫通孔に臨む前記電気的
機能素子の電極取り出し部上に電極膜を形成し、その後
前記貫通孔中に金、ハンダ、Sn、Inの少なくとも一
つを、線材、球状、棒状、塊状、溶融状態のいずれかの
状態で供給して封孔するとともに、前記電極膜と接合し
てなる電子部品の製造方法。1. An electric functional element is arranged in a case having an opening on at least one surface, and then a lid is bonded to the opening of the case, and then the case having the electric functional element incorporated therein is attached. Placed in a vacuum, an electrode film is formed on the inner peripheral edge of the through hole provided in the case or the lid and on the electrode lead-out portion of the electric functional element facing the through hole, and then gold, solder in the through hole, A method of manufacturing an electronic component, comprising supplying at least one of Sn and In in the form of a wire rod, a sphere, a rod, a lump, or a molten state to seal the hole and join the electrode film.
AgまたはCuの膜よりなる請求項1記載の電子部品の
製造方法。2. The outermost surface layer of the electrode film is Au, Sn, Ni,
The method of manufacturing an electronic component according to claim 1, which is made of a film of Ag or Cu.
を配置し、真空蒸着またはスパッタリングで電極膜を形
成する請求項1記載の電子部品の製造方法。3. The method of manufacturing an electronic component according to claim 1, wherein the case is arranged so that the through hole is opened downward, and the electrode film is formed by vacuum vapor deposition or sputtering.
用いた請求項1〜3のいずれか一つに記載の電子部品の
製造方法。4. The method of manufacturing an electronic component according to claim 1, wherein a surface acoustic wave element is used as the electric functional element.
内に、電気的機能素子を配置し、その後、前記ケースの
開口部にフタを接着し、次に電気的機能素子を内蔵した
前記ケースを真空中に置き、前記ケースまたはフタに設
けた貫通孔の内周縁およびこの貫通孔に臨む前記電気的
機能素子の電極取り出し部上に電極膜を形成し、その後
前記貫通孔中に、この貫通孔よりやや太く形状記憶させ
た後引き伸ばす等の加工を行い前記貫通孔よりやや細く
加工した棒状の形状記憶合金を前記貫通孔に差し込み、
その後加熱を行うことにより、もとの形状に回復させる
ことでこの貫通孔を封孔するとともに、前記電極膜と接
合してなる電子部品の製造方法。5. An electrically functional element is arranged in a case having an opening on at least one surface, a lid is bonded to the opening of the case, and then the case having the electrically functional element incorporated therein is attached. Placed in a vacuum, an electrode film is formed on the inner peripheral edge of the through hole provided in the case or the lid and on the electrode lead-out portion of the electrical functional element facing the through hole, and then the through hole is formed in the through hole. Insert a rod-shaped shape memory alloy processed into a slightly thinner shape than the through hole by performing processing such as stretching after making the shape memory slightly thicker,
A method of manufacturing an electronic component, in which the through hole is sealed by recovering the original shape by heating thereafter, and is bonded to the electrode film.
AgまたはCuの膜よりなる請求項5記載の電子部品の
製造方法。6. The outermost surface layer of the electrode film is Au, Sn, Ni,
The method of manufacturing an electronic component according to claim 5, which is made of a film of Ag or Cu.
を配置し、真空蒸着またはスパッタリングで電極膜を形
成する請求項5記載の電子部品の製造方法。7. The method of manufacturing an electronic component according to claim 5, wherein the case is arranged so that the through hole is opened downward, and the electrode film is formed by vacuum vapor deposition or sputtering.
用いた請求項5〜7のいずれか一つに記載の電子部品の
製造方法。8. The method of manufacturing an electronic component according to claim 5, wherein a surface acoustic wave element is used as the electric functional element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7115522A JPH08316644A (en) | 1995-05-15 | 1995-05-15 | Manufacture of electronic part |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7115522A JPH08316644A (en) | 1995-05-15 | 1995-05-15 | Manufacture of electronic part |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08316644A true JPH08316644A (en) | 1996-11-29 |
Family
ID=14664616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7115522A Pending JPH08316644A (en) | 1995-05-15 | 1995-05-15 | Manufacture of electronic part |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08316644A (en) |
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