JPH08316644A - Manufacture of electronic part - Google Patents

Abstract

PURPOSE: To prevent moisture and the like from entering the case of an electric functional element through its through holes for leading out the terminals of the element. CONSTITUTION: In a case 2 having an opening on at least its one side, such as electric functional element as an surface-acoustic-wave element 4 is disposed, and thereafter, upper and lower covers 1, 3 are bonded to the opening portions of the case 2, and then, the case 2 of the electric functional element being integrated thereinto is disposed in a vacuum to form respectively metallized electrode films 5a, 5b on each lead-out electrode 4a facing each through hole 6 bored in the lower cover 3 and on the inner peripheral edge of each through hole 6. Thereafter, into the through hole 6, at least one material 6a of gold, solder, Sn and In is so fed in either of wire-, sphere-, bar-, lump- and melt-form states that the through hole 6 is sealed by the material 6a and the material 6a is joined to the metallized electrode films 5a, 5b.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic component having a case in which an electric functional element is housed.

[0002]

2. Description of the Related Art Electrically functional devices such as surface acoustic wave devices and CCD image pickup devices have been housed in metal or ceramic cases in order to suppress deterioration and characteristic fluctuations due to the environment. Further, a through hole is provided in the case, one end of the terminal is drawn out of the case through the through hole, and the other end of the terminal is electrically connected to the electric functional element in the case.

[0003]

In the conventional device, one end of the terminal is pulled out from the through hole of the case, but the airtightness at this through hole portion has been a problem. That is, a gap is always formed between the through hole and the terminal, and moisture or the like penetrates into the case through the gap, which causes deterioration of the electrical functional element and characteristic changes.

Therefore, an object of the present invention is to obtain an airtight structure which does not cause deterioration of an electric functional element or characteristic variation.

[0005]

In order to achieve this object, according to the present invention, an electrically functional element is arranged in a case having an opening on at least one surface, and then a lid is provided in the opening of the case. Then, the case containing the electric functional element is placed in a vacuum, and the inner peripheral edge of the through hole provided in the case or the lid and the electrode lead-out portion of the electric functional element facing the through hole are attached. An electrode film is formed, and then at least one of gold, solder, Sn, and In is supplied into the through hole in any one of a wire, a spherical shape, a rod shape, a lump shape, and a molten state to seal the hole. An electronic component is manufactured by joining with an electrode film.

[0006]

According to the above manufacturing method, the inner peripheral edge of the through hole formed in the case or the lid and the electric functional element facing the through hole in a state where the case accommodating the electric functional element is placed in a vacuum. After the electrode film is formed on the electrode extraction part of the device, the hole is sealed with gold, solder, Sn, In, or an alloy material thereof, so that airtightness in the case is maintained, and deterioration or characteristic fluctuation of the electrical functional element does not occur. Of.

Further, the sealing member can electrically draw the electrode lead-out portion of the electric functional element out of the case,
It is easy to manufacture.

[0008]

Embodiments of the present invention will be described below.

(Embodiment 1) FIG. 1 shows a sectional structure of an electronic component prepared according to a first embodiment of the present invention. In this example, a surface acoustic wave element was used as the electrical functional element. In the figure, reference numeral 1 is an upper lid made of a glass plate, and 2 is a frame-shaped case in which the upper lid 1 is fixed to the opening at one end thereof by directly joining the glasses together. 3 is a lower lid made of a glass plate having two through holes 6 formed therein.
Is fixed at the other end opening. Reference numeral 4 is a surface acoustic wave element, 4a is an extraction electrode which is arranged so as to coincide with the through hole 6, and 4b is an IDT (interdigital transducer) electrode. Reference numerals 5a and 5b denote metallized electrode films formed by sealing the surface acoustic wave element 4 in the case 2, the upper and lower lids 1 and 3, and forming the surface acoustic wave element 4 by sputtering in vacuum after sealing.
Reference numeral a is a sealing member made of Au for connection with the take-out electrode, and reference numeral 7 is a printed electrode provided for solder connection to the printed board. Hereinafter, the manufacturing method of the present embodiment will be described in detail with reference to FIGS. Note that the same numbers as in FIG. 1 are given the same numbers. In this embodiment, glass is used for the upper lid 1, the case 2 and the lower lid 3, the through hole 6 is provided at a predetermined position of the lower lid 3 and then the case 2 is placed, and the surface acoustic wave element 4 is taken out. The electrode portion 4a is arranged so as to substantially coincide with the through hole 6, and then the upper lid 1 is placed and brought into close contact with the through hole 6, and then the upper lid 1 and the joint portions 30a and 30b between the case 2 and the lower lid 3 are heated. It joined by direct joining of glasses. The heating temperature at this time was 300 ° C. for 5 minutes. Next, as shown in FIG. 3, the sealing structure in which the surface acoustic wave element 4 is arranged is set in a vacuum device so that the lower lid 3 side is the lower surface, and sputtering is performed to form Ti as the lowermost layer.
A film, then a Cu film, and an Au film as the uppermost layer were successively formed in the same vacuum to provide metallized electrode films 5a and 5b. The thickness of each film is 100 nm for Ti film, 2 μm for Cu film, and A
The u film has a thickness of 500 nm. At this time, by setting the vacuum device so that the through hole 6 side of the sealing structure faces downward, the take-out electrode 4a portion of the surface acoustic wave element 4 is inserted into the through hole 6
It became almost in close contact with the portion, and sputtered metal atoms were prevented from wrapping around around the IDT electrode 4b during sputtering film formation. After forming the metallized electrode films 5a and 5b, as shown in FIG. 4, an Au wire slightly longer than the plate thickness of the lower lid 3 is formed in the through hole 6
It was inserted into the inside and was pressed and held by the holding plate 8. Next, as shown in FIG. 5, the holding plate 8 and the sealing structure are heated to about 400 ° C., and the extraction electrode 4a and the metallized electrode films 5a and 5b in the through hole 6 are joined by Au-Au joining. It was In this case, even if the sealing structure is heated to 400 ° C., there is no adhesive resin or the like in the sealing structure, so that problems such as gas release do not occur. After that, a Cu paste was formed by printing to form a printed electrode 7 for bonding to a printed board. Finally, unnecessary metallized electrode films 5a and 5b formed on the lower lid 3 were removed by etching to form the structure shown in FIG. In the present embodiment, the metallized electrode films 5a and 5b are formed on the entire surface of the lower lid 3, but it is also possible to form only the necessary portions by using a mask. In that case, the unnecessary metallized electrode films 5a and 5b are formed. The etching step is unnecessary. Further, in the present embodiment, Au-Au bonding was performed using Au wire as the material for forming the sealing body 6a, but solder, Sn or In was used.
Alternatively, using these alloys, solder bonding or Au-Sn
It is also possible to use means such as joining. In that case, the materials of the metallized electrode films 5a and 5b are also appropriately changed according to the joining means.

(Embodiment 2) Referring to FIG. 7, description will be given of a method of making according to the second embodiment of the present invention. 7, the same numbers as those in FIG. 1 are given the same numbers. In this embodiment, as in the first embodiment, the upper lid 1, the case 2 and the lower lid 3 are made of glass, and the package is sealed by direct bonding. The metallized electrode films 5a and 5b were formed only on the necessary portions by using a metal mask. Metallized electrode 5a,
As a material for forming 5b, a Ti film (100 nm) was formed on the lowermost layer, a Ni film (1 μm) was formed on the lowermost layer, and a Sn film (1 μm) was formed on the uppermost layer by sputtering. Thereafter, as shown in FIG. 7, the dispenser 9 obtained by heating and melting the high-temperature solder 10 containing Pb as a main component is aligned with the through-hole 6 portion, and an appropriate amount of the through-hole 6 is formed.
Then, solder 10 was applied to both the metallized electrode film 5a on the extraction electrode portion 4a of the surface acoustic wave element 4 and the metallized electrode film 5b on the lower lid 3. At this time, the sealing structure was heated to about 250 ° C. and performed in a non-oxidizing atmosphere. After filling the through holes 6 with the solder 10 in this way, the printed electrode 7 was formed by using the Cu paste as in the first embodiment and completed, but it is the same as in the first embodiment. Not shown in this embodiment. Although Sn / Ni / Ti is used as the metallized electrodes 5a and 5b in this embodiment, an Au / Cu / Ti structure or a Cu / Ti structure is also possible, and the electrode structure is not limited to this embodiment. It is possible to select the optimum combination with the solder material.

In this embodiment, the upper lid 1, the case 2,
Although the example of the direct joining method using glass is shown as the joining and unifying of the lower lid 3, the joining temperature and the joining temperature of the through-hole 6 part can be obtained by joining and unifying these three members by the solder joining method or the joining method by glass. It can be used with due consideration.

(Embodiment 3) A method of making a film according to the third embodiment of the present invention will be described with reference to FIG. In this embodiment, the upper lid 11 and the case 12 having an opening only on one surface are made of ceramic. Then, the surface acoustic wave filter 14 is disposed inside the electrode 14a and the through hole 11b formed in the upper lid 11 so as to substantially coincide with each other.
Although not shown, the case 12 was heated to about 430 ° C. with a glass material having a low melting point to bond and seal the bonding portion 13.
Then, the metallized electrodes 5a and 5b were formed by setting in a vacuum apparatus as in the first embodiment described above. In the metallized electrode films 5a and 5b of this example, a Cr film (100 nm) was formed on the lowermost layer, and then an Ag film (5 μm) was formed. Thereafter, as shown in FIG. 8, a rod-shaped material made of a shape memory alloy is inserted into the through hole 11b and heated to a predetermined temperature, whereby the shape memory alloy is transformed into the shape originally memorized,
The sealing body 15 realizes the connection with the extraction electrode and the sealing. The shape change of the shape memory alloy will be described with reference to FIGS. 9 and 10. FIG. 9 shows a state where a rod-shaped body made of a shape memory alloy is inserted into the through hole 11b. As the initial shape of the rod-shaped body made of a shape memory alloy, as shown in FIG. 10, a diameter H slightly larger than that of the through hole 11b portion including the film thickness of the metallized electrode film 5b is stored. After that, as shown in FIG. 9, mechanical deformation is performed so that the diameter h becomes slightly smaller than that of the through hole 11b. In this state, the through hole 11b
Since the diameter h is slightly smaller than that of the portion, it can be easily inserted into the through hole 11b. Multiple through holes 1
After the rod-shaped shape memory alloy is inserted into the entire 1b portion, the entire sealing structure including the upper lid 11 and the case 12 is heated to a temperature above the martensite transformation point of the shape memory alloy, whereby the shape memory alloy is initially formed. Return to the shape of. At this time, since the diameter of the shape memory alloy is slightly larger than the diameter of the through-hole 11b, the shape memory alloy is shaped into a metallized electrode 5.
In addition, the connection with the extraction electrode 14a and the sealing via the metallized electrode film 5a are completed at the same time. At this time, the metallized electrode film 5b plays a role of packing, and more complete sealing is achieved as compared with the case where the metallized electrode film 5b is not formed. Further, it was confirmed that the contact with the extraction electrode 14a was also relieved of the pressure by the metallized electrode film 5a, so that the surface acoustic wave filter 14 was not subjected to an excessive deformation force and the frequency characteristic was not abnormal. Although this type of connection is performed by mechanical contact, the shape memory alloy has a large deformation capacity and maintains its shape once restored, so that the through hole 11b is always subjected to pressure from the shape memory alloy. As a result, highly reliable connection is possible.
As a shape memory alloy material, a Ni / Ti alloy is the most desirable for its shape memory effect, but an Ag / Cd alloy or a C
u ・ Al ・ Ni alloy, Cu ・ Au ・ Zn alloy, Cu ・ S
An n alloy, a Cu.Zn alloy, a Ni.Al alloy, or the like can also be used.

[0013]

As described above, according to the present invention, an electrically functional element is arranged in a case having an opening on at least one surface,
Then, a lid is adhered to the opening of the case, the case containing the electrically functional element is then placed in a vacuum, and the inner peripheral edge of the through hole provided in the case or the lid and the electrical contact facing the through hole are formed. An electrode film on the electrode lead-out portion of the functionally functional element, and then gold, solder, S
At least one of n and In is supplied in the state of a wire, a sphere, a rod, a lump, or a molten state to seal the hole, and is bonded to the electrode film to manufacture an electronic component.

According to the above-mentioned manufacturing method, the inner peripheral edge of the through hole provided in the case or the lid and the electrical function facing the through hole in a state where the case accommodating the electrically functional element is placed in a vacuum. After forming the electrode film on the electrode lead-out portion of the element, the hole is sealed with gold, solder, Sn, In, or an alloy material thereof, so that airtightness is maintained in the case, and deterioration or characteristic fluctuation of the electric functional element occurs. It will disappear.

Further, the sealing member can electrically draw out the electrode take-out portion of the electric functional element to the outside of the case,
It is easy to manufacture.

[Brief description of drawings]

FIG. 1 is a sectional view of an electronic component manufactured according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a manufacturing process of the first embodiment.

FIG. 3 is a sectional view showing a manufacturing process of the first embodiment.

FIG. 4 is a sectional view showing a manufacturing process of the first embodiment.

FIG. 5 is a sectional view showing the manufacturing process of the first embodiment.

FIG. 6 is a cross-sectional view showing the manufacturing process of the first embodiment.

FIG. 7 is a cross-sectional view showing the manufacturing process of the second embodiment of the present invention.

FIG. 8 is a cross-sectional view showing the manufacturing process of the third embodiment of the present invention.

FIG. 9 is a cross-sectional view showing the manufacturing process of the third embodiment.

FIG. 10 is a sectional view showing a manufacturing process of the third embodiment.

[Explanation of symbols]

 1 Upper Lid 2 Case 3 Lower Lid 4 Surface Acoustic Wave Element 5a Metallized Electrode Film 5b Metallized Electrode Film 6 Through Hole 6a Sealing Body 7 Printed Electrode

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Souko Takahashi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (8)

[Claims] 1. An electric functional element is arranged in a case having an opening on at least one surface, and then a lid is bonded to the opening of the case, and then the case having the electric functional element incorporated therein is attached. Placed in a vacuum, an electrode film is formed on the inner peripheral edge of the through hole provided in the case or the lid and on the electrode lead-out portion of the electric functional element facing the through hole, and then gold, solder in the through hole, A method of manufacturing an electronic component, comprising supplying at least one of Sn and In in the form of a wire rod, a sphere, a rod, a lump, or a molten state to seal the hole and join the electrode film. 2. The outermost surface layer of the electrode film is Au, Sn, Ni,
The method of manufacturing an electronic component according to claim 1, which is made of a film of Ag or Cu. 3. The method of manufacturing an electronic component according to claim 1, wherein the case is arranged so that the through hole is opened downward, and the electrode film is formed by vacuum vapor deposition or sputtering. 4. The method of manufacturing an electronic component according to claim 1, wherein a surface acoustic wave element is used as the electric functional element. 5. An electrically functional element is arranged in a case having an opening on at least one surface, a lid is bonded to the opening of the case, and then the case having the electrically functional element incorporated therein is attached. Placed in a vacuum, an electrode film is formed on the inner peripheral edge of the through hole provided in the case or the lid and on the electrode lead-out portion of the electrical functional element facing the through hole, and then the through hole is formed in the through hole. Insert a rod-shaped shape memory alloy processed into a slightly thinner shape than the through hole by performing processing such as stretching after making the shape memory slightly thicker,
A method of manufacturing an electronic component, in which the through hole is sealed by recovering the original shape by heating thereafter, and is bonded to the electrode film. 6. The outermost surface layer of the electrode film is Au, Sn, Ni,
The method of manufacturing an electronic component according to claim 5, which is made of a film of Ag or Cu. 7. The method of manufacturing an electronic component according to claim 5, wherein the case is arranged so that the through hole is opened downward, and the electrode film is formed by vacuum vapor deposition or sputtering. 8. The method of manufacturing an electronic component according to claim 5, wherein a surface acoustic wave element is used as the electric functional element.