JPH08315324A - Magnetoresistant magnetic head and its production - Google Patents

Abstract

PURPOSE: To obtain an MR head having extremely good sensitivity with a small bias magnetic field and a high reproducing output and to obtain a production method to easily produce this MR head. CONSTITUTION: A multilayered film element 1 is formed in such a manner that the axis of easy magnetization (shown as an arrow N) makes an angle θbetween 45 deg. and 90 deg. in the direction of external signal magnetic field shown as an arrow M, which is perpendicular to the longitudinal direction of the multilayered element 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect magnetic head provided with a magnetic layer having a magnetoresistive effect whose resistivity changes according to a recording magnetic field from a magnetic recording medium, and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, as hard disk devices have become smaller and have larger capacities, particularly in applications where application to portable computers such as notebook personal computers is considered, for example, about 2.5 inches. There is an increasing demand for small hard disk drives.

In such a small hard disk, the medium speed becomes slow depending on the disk diameter, so that in the conventional induction type magnetic head in which the reproducing output depends on the medium speed, the reproducing output is lowered and the increase of the capacity is hindered. Has become.

On the other hand, a magnetoresistive head (hereinafter referred to as a magnetoresistive head) which detects a resistance change of a magnetic film (hereinafter simply referred to as an MR element) having a magnetoresistive effect in which the resistivity changes according to a magnetic field as a reproduction output voltage , Which is simply referred to as an MR head.) Has a feature that its reproduction output does not depend on the medium speed and that a high reproduction output can be obtained even at a low medium speed. Has been done.

This MR head is a reproducing magnetic head utilizing a so-called magnetoresistive effect phenomenon in which the electric resistance value changes depending on the angle formed by the direction of magnetization seen in a transition metal and the direction of current flowing therein. That is, when the MR element receives the leakage magnetic flux from the magnetic recording medium, the direction of the magnetization of the MR element is reversed by the magnetic flux, and the MR element
It has an angle corresponding to the magnetic amount with respect to the direction of the current flowing inside the element. Therefore, the electric resistance value of the MR element changes, and a voltage change corresponding to the amount of change appears in the electrodes at both ends of the MR element through which the current flows. Therefore, the magnetic recording signal can be read by using this voltage change as a voltage signal.

The MR head is formed by depositing the MR element, the electrode film, the insulating layer, etc. on the substrate by a thin film technique and etching them into a predetermined shape by a photolithography technique, so that the gap length during reproduction is reduced. In order to prevent an undesired magnetic flux from penetrating into the MR element, a shield structure in which a lower magnetic pole and an upper magnetic pole, which serve as shield materials, are arranged vertically is adopted.

Specifically, for example, in a so-called lateral MR head in which a sense current flows in a direction substantially parallel to a surface facing a magnetic recording medium (a magnetic recording medium running surface), a so-called lateral MR head is a soft magnetic film serving as a lower magnetic layer. An insulating layer is laminated thereon, and the MR element is arranged on the insulating layer so that the longitudinal direction thereof is substantially parallel to the running surface of the magnetic recording medium, and one end face in the longitudinal direction runs on the magnetic recording medium. It is formed so that it is exposed on the surface. Further, a pair of extraction electrodes for providing a sense current to the MR element are provided on both ends of the MR element, and an insulating layer made of Al ₂ O ₃ or SiO ₂ is formed on the MR element. Has been done. The above-mentioned M is formed on this insulating layer.
A bias conductor is arranged opposite to the R element, an insulating layer is further formed on the bias conductor, and a soft magnetic film serving as an upper magnetic layer is laminated on the insulating layer to form the MR head.

Here, in the MR head, the M
The function of the R element will be described. The electric resistance R of this MR element is the magnetic flux intensity (magnetic flux amount) input to the MR element.
Change according to. That is, the external magnetic field dependence of the electric resistance R of the MR element is represented by the MR curve shown in FIG. 23 as the MR characteristic.

When driving the MR element, first,
The bias magnetic field Hb is applied to the MR element in advance up to the point where the linearity with respect to the external magnetic field is excellent and the change in the electric resistance R is the largest. This point is referred to as an operating point A. At this time, when the signal magnetic field ΔHs from the magnetic recording medium is input, it is converted into a resistance change ΔRs. That is, MR
If a predetermined sense current Is is passed through the element, this resistance change Δ is obtained based on Ohm's law ΔVs = ΔRs × Is.
Rs can be taken out as the output voltage ΔVs.

The MR head has a structure in which the MR element is sandwiched between an upper magnetic layer and a lower magnetic layer.
It is possible to improve the reproduction output S / N and recording density as compared with the case without the lower magnetic layer.

[0011]

Recently, in order to meet the demand for higher recording density, the external signal magnetic field from the magnetic recording medium tends to be made smaller and smaller. Since it is considered that the reproduction output of the MR head will decrease accordingly, the MR having a larger resistance change rate is used.
It is necessary to form an element.

In recent years, a so-called artificial lattice film, which is a multilayer film element in which a plurality of magnetic layers made of a ferromagnetic material and conductive layers made of a non-magnetic material having conductivity are alternately laminated, has been devised and prosperous. Research is ongoing. This artificial lattice film
It is called a giant magnetoresistive effect element (GMR element) because the rate of change in resistance is one digit higher than that of a conventional MR element.

Unlike the conventional MR element, the magnetoresistive effect of the GMR element does not depend on the angle formed between the external signal magnetic field applying direction and the sense current flowing direction. In the GMR element, when the external signal magnetic field is not applied, the magnetization of the magnetic layer is arranged antiparallel (antiferromagnetic arrangement).
It is known that the magnetization of the magnetic layer starts to be arranged in parallel (ferromagnetic arrangement) as an external signal magnetic field is applied, and the electric resistance value remarkably decreases with the change of the arrangement. In the GMR element, the exchange interaction that acts between the layers of the magnetic layers is used to generate the giant magnetoresistive effect. It is known that the magnitude of this exchange interaction depends on the film thickness of the conductive layer made of a non-magnetic material and changes periodically. The GMR element exhibits a large rate of resistance change when this exchange interaction is large, but it does not saturate unless a large magnetic field is applied, and it is difficult to apply it to an MR head.

In this case, the exchange interaction of the GMR element is weakened by simply increasing the thickness of the conductive layer, but the rate of change in resistance is accordingly reduced. Although the GMR element has a large resistance change rate, it also has a large saturation magnetic field.
It is hard to say that the sensitivity (rate of change in resistance per unit magnetic field) is sufficient, and how to improve the sensitivity will be the greatest issue in the future.

Also in the MR head using the GMR element, it is necessary to apply a predetermined bias magnetic field to the GMR element for linear operation. Although many proposals have been made as a method for applying a bias magnetic field, it is difficult to obtain a large bias magnetic field by any method. Therefore, an MR element that operates with high sensitivity with a bias magnetic field as small as possible is desired.

The present invention has been made in view of the above problems, and an object of the present invention is to provide an MR head having a very high sensitivity with a small bias magnetic field and a high reproduction output, and the MR head. It is an object of the present invention to provide a manufacturing method capable of easily manufacturing.

[0017]

The object of the present invention is to provide a magnetic layer (MR film) having a magnetoresistive effect whose resistivity is changed by a magnetic field, and reproduce the resistance change of the MR element. A magnetoresistive effect magnetic head (MR head) that detects an output voltage and a method for manufacturing the same.

The MR head of the present invention comprises a multi-layered film element which exhibits a magnetoresistive effect by alternately laminating a plurality of magnetic layers made of a ferromagnetic material and conductive layers made of a non-magnetic material having conductivity. The multi-layered film element has a direction of application of an external signal magnetic field
It is characterized by having an easy axis of magnetization in a direction forming an angle of 5 ° or more and less than 90 °. Here, the easy magnetization axis is a direction in which the magnetic anisotropy energy is maximized and the spontaneous magnetization is stably oriented. Further, it is preferable to provide the multilayer film element such that its longitudinal direction is substantially parallel to the running surface of the magnetic recording medium.

At this time, when the angle is smaller than 45 °, the saturation magnetic field of the multilayer film element is small and the sensitivity is high in a low magnetic field, but the external magnetic field application characteristics (MR
(Characteristic) causes hysteresis and the operation of the multilayer film element becomes unstable. When the angle is 90 ° or more, hysteresis does not occur in the MR characteristics and the multilayer film element operates stably, but the saturation magnetic field of the multilayer film element is large and the sensitivity decreases.

In this case, as the material of the magnetic layer of the multilayer film element, Cu containing 1 to 50 atomic% and Fe, Co,
It is preferable to use a material containing at least one of Ni. Here, when the content of Cu in the magnetic layer is less than 1 atomic%, a sufficient rate of change in excitation cannot be obtained, and when the content is more than 50 atomic%, the resistance is similarly increased. The effect of increasing the rate of change diminishes.

Specifically, when the magnetic layer of the multilayer film element is Fe,
When all of Co and Ni are contained, each composition ratio x, y,
Each of z is 10 ≦ x ≦ 25 40 ≦ y ≦ 80 10 ≦ z ≦ 40 (where x, y, and z are values representing the composition ratio in atomic%, and x + y + z = 100). It is preferable to use a material that is

In addition, the conductive layer of the above-mentioned multilayer film element is made to have 1.8 to
It is preferable to form a film with a thickness of 2.8 nm. M above
The resistance change rate of the R head also varies depending on the film thickness of the conductive layer, and even if the film thickness is smaller than 1.8 nm, it is 2.8.
Even if the thickness is larger than nm, the rate of change in resistance will decrease.

According to the method of manufacturing an MR head of the present invention, there is provided a substrate setting means having a substrate setting portion on the surface and rotatable about an axis of rotation, and a ferromagnetic material provided opposite to the substrate setting portion. And a non-magnetic material supplying means provided facing the non-magnetic material substrate setting portion having conductivity, and a non-magnetic material supplying means provided between the substrate setting portion and the ferromagnetic material supplying means. A first shutter member that shields and releases the supply of the ferromagnetic material, and a second shutter that is provided between the substrate installation portion and the non-magnetic material supply means and shields and releases the supply of the non-magnetic material. The member and the vacuum thin film forming apparatus each housed in a vacuum container are used to alternately open and close the first and second shutter members while rotating the substrate setting means. Conductive with the magnetic layer Forming a multilayer film by alternately laminating a plurality of conductive layers made of a magnetic material; and using the substrate on which the multilayer film is formed, the external signal magnetic field direction and the easy magnetization axis direction of the multilayer film. An MR head is manufactured by subjecting the multilayer film to a patterning process so that the angle formed by the film becomes 45 ° or more and less than 90 ° to form a multilayer film element. Is.

In this case, as a specific example of forming a vacuum thin film, a ferromagnetic material supplying means and a non-magnetic material supplying means are respectively used as sputter targets, and a predetermined sputter gas is introduced into a vacuum container to form a substrate. It is preferable to perform a sputtering process.

[0025]

In the MR head according to the present invention, a multilayer film element having a magnetoresistive effect is obtained by alternately laminating a plurality of magnetic layers made of a ferromagnetic material and conductive layers made of a non-magnetic material having conductivity. External signal magnetic field applied direction and 45 ° or more 90
It has an axis of easy magnetization in a direction forming an angle smaller than °.

In operating the above-mentioned multilayer film element,
The magnetic domain control for changing the magnetic domain state to the single magnetic domain state is unnecessary, and Barkhausen noise is suppressed. Further, since the multilayer film element has the easy axis of magnetization in the direction as described above, it exhibits high sensitivity in a low magnetic field almost in the same manner as the case where the application direction of the external signal magnetic field and the easy axis of magnetization coincide. Similar to the case where the direction of applying the external signal magnetic field and the direction of the easy axis of magnetization are orthogonal to each other, the MR characteristic has little hysteresis and operates stably, and a reproduced waveform having excellent linearity can be obtained.

Further, in the method of manufacturing an MR head according to the present invention, the magnetic layer and the conductive layer made of a non-magnetic material having conductivity are alternately arranged on the substrate while rotating the substrate setting means on which the substrate is set. A plurality of layers are laminated to form a multilayer film.

In this case, the uniaxial anisotropy is induced in the multilayer film so that the rotation radius direction of the substrate setting means becomes the easy magnetization axis. Therefore, by using the substrate on which the multilayer film is formed and performing the patterning process on the multilayer film so that the angle formed by the external signal magnetic field direction and the easy axis of magnetization of the multilayer film has a desired value, It is possible to form a multilayer film element having an easy axis of magnetization of a desired angle.

[0029]

Embodiments of an MR head and a method of manufacturing the same according to the present invention will be described below in detail with reference to the drawings.

In the MR head according to this embodiment, as shown in FIG. 1, the multi-layer film element 1 which is a magnetic sensitive portion formed so that its longitudinal direction is substantially parallel to the running surface a of the magnetic recording medium is at the bottom. The structure is sandwiched between the magnetic substrate 2 and the upper magnetic substrate 3, and is configured as a so-called horizontal type thin film magnetic head.

Specifically, the lower magnetic substrate 2 made of Ni-Fe or the like is used as a lower magnetic shield plate, and silicon dioxide (S) forming a magnetic gap on the surface of the lower magnetic substrate 2 is used.
An insulating layer 11 made of iO ₂ ) is laminated.

Further, the multilayer film element 1 having the above-mentioned magnetic sensing portion is formed on the insulating layer 11, and the magnetic layer 22 which will be described later and is a component of the multilayer film element 1 is formed on the multilayer film element 1.
Shunt bias film 1 for applying a bias magnetic field to the
2 is formed, and the multilayer film element 1 and the shunt bias film 1 are formed.
2 are patterned in the same shape.

Then, as shown in FIG. 2, a pair of extraction electrodes 13a and 13b, which are conductive films, are formed on the insulating layer 11 so as to be connected to the respective end portions of the multilayer film element 1, and the extraction is performed. An insulating layer 14 made of SiO ₂ which forms a magnetic gap is formed on the electrodes 13a and 13b, and an upper magnetic substrate 3 made of Ni-Fe or the like is bonded and fixed as an upper magnetic shield plate on the insulating layer 14 to form the MR head. It is configured.

Instead of the shunt bias film 12, for example, a bias conductor film may be formed on the multilayer film element 1 via an insulating layer. The arrangement position of this bias conductor film and its pattern can take various structures.
For example, a two-layer structure or a spiral structure is also possible. Further, the permanent magnet thin film can be provided instead of using the induction magnetic field due to such energization.

The multilayer film element 1 is a GMR element made of a so-called giant artificial lattice film, and as shown in FIG. 3, the magnetic layer (MR film) 21 and the conductive layer 22 having conductivity via the buffer layer 23. Are alternately laminated so that the uppermost layer is the magnetic layer 21, and 11 layers and 10 layers are laminated, respectively, and the magnetic sensitive region between the extraction electrodes 13a and 13b exhibits a magnetoresistive effect.

The magnetic layer 21 is preferably made of a material containing 1 to 50 atomic% of Cu and at least one of Fe, Co and Ni, and further Fe and C.
containing all o and Ni, and each composition ratio (atomic%) x, y, z
Respectively, 10 ≦ x ≦ 25 40 ≦ y ≦ 80 10 ≦ z ≦ 40 However, it is more preferable that the material is x + y + z = 100. Here, specifically, as a material of the magnetic layer 21, (Fe ₂₀ Co
₃₅ Ni ₄₅ ) ₈₀ Cu ₂₀ is used.

It is preferable that the conductive layer 22 is made of Cu (or Cr) as a material and has a film thickness of 1.8 to 2.8 nm. The resistance change rate of the MR head also varies depending on the film thickness of the conductive layer 22, and this film thickness is 1.8 nm.
The resistance change rate is lowered both when the thickness is smaller and when it is larger than 2.8 nm. Here, the film thickness of the conductive layer 22 is 2.1 nm, and the film thickness of the magnetic layer 22 is 1.0 nm.

In particular, in this embodiment, as shown in FIG. 4, the multilayer film element 1 is orthogonal to the application direction of the external signal magnetic field indicated by the arrow M in FIG. 4, that is, the longitudinal direction of the multilayer film element 1. An easy axis of magnetization (the direction of the easy axis of magnetization is indicated by an arrow N) is provided in a direction forming an angle θ of 45 ° or more and less than 90 ° with the direction. Here, the easy magnetization axis is the direction in which the magnetic anisotropy energy is maximized and the spontaneous magnetization is stably oriented, while the hard magnetization axis is the direction in which the magnetic anisotropy energy is maximized.

Here, when the angle θ is less than 45 °, the saturation magnetic field of the multilayer film element 1 is small and high sensitivity is achieved at a low magnetic field, but the external magnetic field application characteristic (MR
(Characteristic) causes hysteresis and the operation of the multilayer film element 1 becomes unstable. When the angle θ is 90 ° or more, hysteresis does not occur in the MR characteristics and the multilayer film element operates stably, but the saturation magnetic field of the multilayer film element 1 is large and the sensitivity decreases.

Here, in the MR head, the multilayer film element 1 is arranged such that its longitudinal direction is substantially parallel to the surface facing the magnetic recording medium, that is, the running surface a of the magnetic recording medium. One end face is exposed to the magnetic recording medium running surface a. The extraction electrodes 13a and 13b respectively formed on both ends of the multilayer film element 1 are formed for the purpose of flowing a sense current along the longitudinal direction of the multilayer film element 1. Therefore, in the above MR head,
In the multilayer film element 1, the region between the extraction electrodes 13a and 13b exhibits the magnetoresistive effect.

As described above, in the MR head of this embodiment, a plurality of magnetic layers 21 made of a ferromagnetic material and conductive layers made of a non-magnetic material having conductivity 22 are alternately laminated to provide a magnetoresistive effect. The resulting multilayer film element 1 has an easy axis of magnetization in a direction that forms an angle of 45 ° or more and less than 90 ° with the application direction of the external signal magnetic field.

When the multilayer film element 1 is operated, the magnetic domain control for changing the magnetic domain state to the single magnetic domain state is unnecessary, and Barkhausen noise is suppressed. Further, since the multilayer film element 1 has the easy axis of magnetization in the above-mentioned direction, it exhibits high sensitivity in a low magnetic field almost in the same manner as the case where the application direction of the external signal magnetic field coincides with the easy axis of magnetization. As in the case where the direction of applying the external signal magnetic field and the direction of the easy axis of magnetization are orthogonal to each other, the MR characteristic has little hysteresis and operates stably, and a reproduced waveform having excellent linearity can be obtained.

Now, a method of manufacturing the MR head will be described. Here, for simplicity, only the portion corresponding to one MR head will be illustrated.

In order to manufacture this MR head, first, the lower magnetic substrate 2 made of a soft magnetic material as shown in FIG. 5 is used, and as shown in FIG. Then, an insulating layer 11 made of SiO ₂ is formed by sputtering.

Then, as shown in FIG. 7, a multilayer film 41 is formed on the insulating layer 11 by sputtering. As shown in FIG. 8, the sputtering apparatus used at this time has a rotating substrate holder 32 which is a substrate setting means having a substrate setting portion 32a on the surface and being rotatable about a rotation shaft 31.
And a ferromagnetic material target 33 which is a ferromagnetic material supply means made of a ferromagnetic material and provided to face the substrate installation site.
And a non-magnetic material target 34, which is a non-magnetic material supply means provided facing the electrically conductive non-magnetic material substrate installation site, and a strong material provided between the substrate installation site and the ferromagnetic material target 33. A first shutter member 35 that blocks and releases the supply of the magnetic material, and a second shutter that is provided between the substrate installation portion and the non-magnetic material target 34 and that shields and releases the supply of the non-magnetic material. The member 36 is housed in a chamber 37 which is a vacuum container.

Here, the ferromagnetic material target 33 is (Fe
₂₀ Co ₃₅ Ni ₄₅ ) ₈₀ Cu ₂₀ is used as the material, and the non-magnetic material target 34 is made of Cu.
Further, the chamber 37 is provided with an exhaust port for evacuating and an inlet port for Ar gas that is a sputtering gas (both are not shown).

In order to form the multilayer film 41 by using the above sputtering apparatus, first, the lower magnetic substrate 2 is placed on the rotary substrate holder 3.
2 is fixed to the substrate installation site 32a facing the targets 33 and 34 on the upper part of the chamber 2, and the inside of the chamber 37 is 1 × 10 ⁻⁴ Pa.
After pre-evacuating from the above exhaust port until the vacuum state of
Ar gas is introduced from the above-mentioned inlet to adjust the gas pressure to 0.5 Pa.
To hold.

Next, the rotating substrate holder 32 is rotated at a predetermined rotation speed to rotate the first and second shutter members 35 and 36.
While opening and closing, a predetermined electric power is applied to both the ferromagnetic material target 33 and the non-magnetic material target 34 to generate plasma discharge. At this time, when the first and second shutter members 35 and 36 are opened, the lower magnetic substrate 2 alternately passes over the targets 33 and 34 so that the magnetic layers 21 and the conductive layers 22 are laminated to form a multilayer film. As the film 41 is formed, uniaxial anisotropy is induced in the multilayer film 41 so that the rotation radius direction of the rotating substrate holder 32 becomes the easy axis of magnetization.

The magnetic layers 21 and the conductive layers 22 of the multilayer film 41 are controlled by precisely controlling the sputter discharge current.
The film thickness of can be adjusted to a desired value.

Next, as shown in FIG. 9, a shunt bias film 12 is formed on the multilayer film 41 by sputtering, using Ti, Ta, Cr, Mo or the like as a material.

Then, the multilayer film element 1 is formed by the following photolithography technique. First, as shown in FIG. 10, a shunt bias film 1 is formed by using a photosensitive resist agent.
Then, the resist mask 42 is formed by applying it to No. 2 and patterning it into a desired element shape (rectangular shape). At this time, when the multilayer film element 1 is completed,
The formation position of the resist mask 42 is adjusted so that the angle θ formed between the external signal magnetic field direction M and the easy magnetization axis direction N of the multilayer film 41 is 45 ° or more and less than 90 °.

Next, as shown in FIG. 11, the shunt bias film 1 in a portion other than the resist mask 42 which is patterned by etching by ion milling is used.
2 and the multilayer film 41 are removed. After that, the resist mask 42 is peeled and removed to complete the multilayer film element 1 having a desired shape and a magnetic easy axis direction in a desired direction as shown in FIG.

Next, a photosensitive resist agent is applied on the insulating layer 11 and the multilayer film element 1 and patterned so as to have a die-cut shape in a desired shape of the extraction electrodes 13a and 13b as shown in FIG. Apply resist mask 4
3 is formed.

Thereafter, as shown in FIG. 14, an electrode film 44 is formed by sputtering using Cu as a material. Then, the resist mask 43 is dissolved using a ketone-based organic solvent such as acetone to remove the electrode film 44, thereby forming the extraction electrodes 13a and 13b as shown in FIG.

Next, as shown in FIG. 16, an insulating layer 14 is formed by sputtering using SiO ₂ as a material, and then the upper magnetic substrate 3 made of Ni—Fe or the like is used as an adhesive as shown in FIG. Adhesively fix using.

Then, as shown in FIG.
Is subjected to etching to expose the terminals 45a and 45b of the extraction electrodes 13a and 13b, respectively. afterwards,
Each head chip is cut into pieces, and as shown in FIG. 19, one end surface of each head chip on the side where the multilayer film element 1 is formed is subjected to polishing processing, and a portion indicated by a broken line in the drawing is ground to form a multilayer film. The MR head is completed by exposing the element 1 and forming the magnetic recording medium running surface a.

As described above, according to the method of manufacturing the MR head of this embodiment, the magnetic layer 21 and the conductivity of the magnetic layer 21 are formed on the lower magnetic substrate 2 while rotating the rotary substrate holder 32 on which the lower magnetic substrate 2 is installed. Layer 2 made of a non-magnetic material having
Two and two layers are alternately laminated to form a multilayer film 41.

In this case, uniaxial anisotropy is induced in the multilayer film 41 so that the rotation radius direction of the rotating substrate holder 32 becomes the easy axis of magnetization. Therefore, by using the lower magnetic substrate 2 on which the multilayer film 41 is formed, the external signal magnetic field direction M
By patterning the multilayer film 41 so that an angle θ formed by the direction of the easy axis of magnetization N of the multilayer film 41 has a desired value, the multilayer film element 1 having the easy axis of the desired angle described above.
Can be formed.

Here, one experimental example will be described.
In this experiment, samples of several MR heads having different values of the angle θ formed by the external signal magnetic field direction M and the easy magnetization axis direction N of the multilayer film 41 after forming the multilayer film 41 by using the above-mentioned sputtering apparatus It was manufactured and examined for its MR characteristics.

Here, as a sample of the MR head,
The three samples having the angles θ of 0 °, 45 °, and 90 ° are referred to as samples A to C, and the MR characteristics are measured by measuring about 300 from the external signal magnetic field direction M with respect to the multilayer film element of each sample. An external signal magnetic field of (Oe) was applied.

The experimental results are shown in FIGS. Thus, the maximum resistance change rate is about 15% for each sample, but the sensitivity is also different because the saturation magnetic field is different.

First, as to the sample A, as shown in FIG. 20, a sharp resistance change is obtained in a magnetic field of 20 (Oe) or less and the sensitivity is extremely high, but the MR characteristic has a large hysteresis. On the other hand, for sample C, FIG.
As shown in, the hysteresis is small, but the sensitivity is small because the saturation magnetic field is as large as 100 (Oe).

On the other hand, as shown in FIG. 22, the sample B has a sensitivity slightly lower than that of the sample A, but shows a large resistance change at 30 (Oe) or less, and the hysteresis of the MR characteristic is also present. small. Therefore, if the sample B is used, a large reproduction output can be obtained even with a bias magnetic field as small as 15 (Oe).

Although the embodiments to which the present invention is applied have been described above, the present invention is not limited to these embodiments, and the shape, material, size, etc. can be arbitrarily changed without departing from the scope of the present invention. It is possible to change.

For example, the method of forming the multilayer film element 1 is not limited to the method of adjusting the easy magnetization axis direction when the multilayer film 41 is patterned as described above.
As an example, when depositing the multilayer film 41, when the lower magnetic substrate 2 is installed in the rotating substrate holder 32, the lower magnetic substrate 2 is fixed in advance by being displaced by a predetermined angle with respect to the rotational radial direction of the rotating substrate holder 32. The rotation radius direction of the rotating substrate holder 32 may be the easy magnetization axis direction of the multilayer film 41.

The multilayer film 41 is preferably formed not only by sputtering but also by vapor deposition as in the present embodiment. That is, in this case, the ferromagnetic material target and the non-magnetic material targets 33 and 34 may be replaced by predetermined vapor deposition sources for film formation.

[0067]

According to the present invention, MR having a very high sensitivity and a high reproduction output can be obtained with a small bias magnetic field.
It is possible to provide a head and a manufacturing method capable of easily manufacturing the MR head.

[Brief description of drawings]

FIG. 1 is a cross-sectional view schematically showing an MR head according to this embodiment.

FIG. 2 is a multilayer film element that is a component of the MR head,
FIG. 3 is a perspective view schematically showing only a shunt bias film and front and rear end electrodes.

FIG. 3 is a cross-sectional view schematically showing a multilayer film element which is a constituent element of the MR head.

FIG. 4 is a plan view schematically showing the multilayer film element.

FIG. 5 is a perspective view schematically showing a lower magnetic substrate.

FIG. 6 is a perspective view schematically showing how an insulating layer is formed.

FIG. 7 is a perspective view schematically showing how a multilayer film is formed.

FIG. 8 is a perspective view schematically showing a sputtering apparatus used when forming the multilayer film.

FIG. 9 is a perspective view schematically showing how a shunt bias film is formed.

FIG. 10 is a perspective view schematically showing how a resist mask for forming a multilayer film element is formed.

FIG. 11 is a perspective view schematically showing a state in which the shunt bias film and the multilayer film other than the resist mask are removed.

FIG. 12 is a perspective view schematically showing how a multilayer film element is completed.

FIG. 13 is a perspective view schematically showing how a resist mask for forming front end and rear end electrodes is formed.

FIG. 14 is a perspective view schematically showing how an electrode film is formed.

FIG. 15 is a perspective view schematically showing a state in which front end and rear end electrodes are formed.

FIG. 16 is a perspective view schematically showing how an insulating layer is formed.

FIG. 17 is a perspective view schematically showing how the upper magnetic substrate is adhesively fixed.

FIG. 18 is a perspective view schematically showing a state in which each terminal of the front end and rear end electrodes is exposed by etching.

FIG. 19 is a perspective view schematically showing a completed MR head.

FIG. 20 is an MR characteristic diagram showing the MR characteristic when the angle formed by the direction of the external signal magnetic field and the easy axis of magnetization of the multilayer film element is 0 °.

FIG. 21 is an MR characteristic diagram showing the MR characteristic when the angle formed by the direction of the external signal magnetic field and the easy axis of magnetization of the multilayer film element is 45 °.

FIG. 22 is an MR characteristic diagram showing the MR characteristic when the angle formed by the direction of the external signal magnetic field and the direction of the easy axis of magnetization of the multilayer film element is 90 °.

FIG. 23 is an MR characteristic diagram showing a resistance change of an MR element.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Multilayer film element 2 Lower magnetic pole 3 Upper magnetic pole 11,14 Insulating layer 12 Shunt bias film 13a, 13b Extraction electrode 21 Magnetic layer 22 Conductive layer 31 Rotating shaft 32 Rotating substrate holder 33 Ferromagnetic material target 34 Nonmagnetic material target 35 First shutter member 36 Second shutter member 37 Chamber 41 Multi-layer film

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kiyoshi Kagawa 6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Junko Suzuki 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Toshihiko Yaoi 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo Sony Corporation

Claims (7)

[Claims] 1. A multilayer film element having a magnetoresistive effect by alternately laminating a plurality of magnetic layers made of a ferromagnetic material and conductive layers made of a non-magnetic material having conductivity, the multilayer film element being external. A magnetoresistive effect magnetic head having an easy axis of magnetization in a direction that forms an angle of 45 ° or more and less than 90 ° with a direction in which a signal magnetic field is applied. 2. The magnetoresistive effect magnetic head according to claim 1, wherein the multilayer film element is provided so that its longitudinal direction is substantially parallel to the running surface of the magnetic recording medium. 3. A magnetic layer of a multilayer film element contains Cu in an amount of 1 to 50.
3. A material containing at least 1 atomic% and at least one of Fe, Co and Ni.
The magnetoresistive effect magnetic head described. 4. The magnetic layer of a multilayer film element is made of Fe, Co, N.
i is included, and each composition ratio x, y, z is 10 ≦ x ≦ 25 40 ≦ y ≦ 80 10 ≦ z ≦ 40 (where x, y, and z are composition ratios expressed in atomic%) And a value of x + y + z = 100. 3. The magnetoresistive effect magnetic head according to claim 2, wherein: 5. The conductive layer of the multilayer film element is 1.8 to 2.8.
A film having a thickness of nm is formed.
The magnetoresistive effect magnetic head described. 6. A substrate setting means having a substrate setting portion on the surface and rotatable about an axis of rotation, and a ferromagnetic material supplying means made of a ferromagnetic material and facing the substrate setting portion. And a non-magnetic material supply means provided facing the non-magnetic material substrate installation portion having conductivity, and a ferromagnetic material supply shield provided between the substrate installation portion and the ferromagnetic material supply means. A first shutter member for releasing it and a second shutter member provided between the substrate installation portion and the non-magnetic material supply means for blocking and releasing the supply of the non-magnetic material are provided in the vacuum container. While using the vacuum thin film forming apparatus housed in each of them, the first and
A step of alternately opening and closing the second shutter member, and alternately laminating a plurality of magnetic layers made of a ferromagnetic material and conductive layers made of a non-magnetic material having conductivity on the substrate to form a multilayer film. And using the substrate on which the multilayer film is formed, the angle between the direction of the external signal magnetic field and the easy axis of magnetization of the multilayer film is 45 ° or more 9
And a step of forming a multi-layer film element by patterning the multi-layer film so as to have a value smaller than 0 °. 7. The ferromagnetic material supplying means and the non-magnetic material supplying means are respectively used as sputter targets, and a predetermined sputter gas is introduced into the vacuum chamber to subject the substrate to the sputtering process. Of manufacturing a magnetoresistive effect type magnetic head.