JP2000231706A - Magnetic recording and reproducing head and magnetic storage device using the same as well as its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To embody a large-capacity magnetic storage device by making it possible to apply an MR(magneto-resistance) head to a magnetic storage device which frequently gives rise to thermal asperity and for which the use of the MR head is heretofore impossible. SOLUTION: The reproducing head section, which constitutes a magnetic recording and reproducing head 200 of the magnetic storage device comprising a magnetic recording medium and the head 200 which is arranged and set apart a prescribed spacing from this magnetic recording medium and executes magnetic recording and reproducing, is composed of a ferromagnetic tunnel junction magneto-resistance effect film 100 comprising a first ferromagnetic layer 11, a second ferromagnetic layer 14 and a tunnel barrier layer 13 held between the first and second ferromagnetic layers 11 and 14. In addition, this ferromagnetic tunnel junction magneto-resistance effect film 100 is so composed that the resistance value of this film 100 exhibits an approximately specified value below 5×10-5 Ωcm2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a magnetic recording / reproducing head and a magnetic storage device, and more particularly to a magnetic recording / reproducing head using a magnetoresistance effect by a ferromagnetic tunnel junction and a magnetic storage device using the same.

[0002]

2. Description of the Related Art With the miniaturization and large capacity of magnetic storage devices, magnetoresistive heads (hereinafter referred to as MR heads) having a large reproduction output have been put to practical use. This MR
For the head, see "IEEE Trans. On M
agn,. MAG7 (1971) 150 "
Magnetoresistivity Reado
ut Transducer ".
The MR effect used here is an anisotropic MR (hereinafter referred to as AMR) effect by a NiFe alloy film, and the MR head based on this effect is called an AMR head.

In recent years, attention has been paid to a GMR head using a giant magnetoresistance effect (hereinafter, referred to as GMR) capable of realizing an improvement in recording density by greatly increasing the output of the AMR head. In this GMR, in particular, the magnetoresistive effect generally called a spin valve effect, in which the change in resistance corresponds to the cosine between the magnetization directions of two adjacent magnetic layers, means that a large change in resistance occurs with a small operating magnetic field. From
It is expected as a next-generation MR head. For an MR head using this spin valve effect, see "IEEE
Trans. on Magn,. Vol. 30, no.
6 (1994) 3801 ”in“ Design, F.
abrication & Testing of Spi
n-Valve Read Heads for Hi
gh DensityRecording. "

[0004] However, in general, the biggest disadvantage of the MR head including the GMR head is that the resistance of the reproducing MR element is low.
The point is that it changes not only by the magnetic flux from the magnetic signal recorded on the magnetic medium but also easily by the temperature change of the element. That is, the MR head is both a magnetic sensor and a temperature sensor. The feature of this temperature sensor is that when a magnetic medium using a hard substrate such as glass or aluminum is rotating at a high speed, such as a magnetic disk drive, the temperature when the MR head comes into contact with the medium surface is measured. It is remarkable due to the rise and is called a thermal asperity, which is a problem as a cause of trouble occurrence in the magnetic disk drive.

[0005] Regarding thermal asperity, "IE
EE Trans. on Magn. , MAG-10
(1974) 899 "and" Magnetores "
"Reading of" and "IEEE Trans. on Magn., MA"
G-11 (1975) 1224].
sis of Thermal Noise Spik
e Cancellation ".

As the gap between the magnetic medium and the magnetic head becomes narrower as the magnetic recording density increases, the occurrence of this thermal asperity becomes remarkable. In particular, this gap is 40
In the region of nm or less, the occurrence of thermal asperity becomes remarkable, and it is necessary to particularly smooth the surface of the magnetic medium or to provide a complicated compensation circuit. As a result, the manufacturing cost of the magnetic storage device is increased.

In a magnetic tape device or a floppy disk device using a flexible magnetic recording medium in which a magnetic recording layer is formed on a plastic substrate such as polyethylene terephthalate, the magnetic recording medium and the magnetic head are positively contacted. Also, even if a gap is provided by an air bearing, the head is frequently contacted because of the flexible medium. As a result, thermal asperity is remarkably generated. In particular, there is no example in which an MR head is employed in a floppy disk device.

On the other hand, in recent years, it has been reported that a TMR element exhibiting a magnetoresistance change rate of nearly 20% can be obtained by using an Al surface oxide film for a tunnel barrier layer.
As an example of reporting such a large magnetoresistance change rate, "April 1996, Journal of Applied Physics, Vol. 79, pp. 4724-4729 (Journal of Appli
ed Physics, vol. 79, 4724-4729, 1996) ".

In this method, a first ferromagnetic layer made of CoFe is vacuum-deposited on a glass substrate using an evaporation mask,
Subsequently, the mask is changed to a 1.2-2.0 nm thick Al.
Deposit the layer. By exposing the surface of the Al layer to oxygen glow discharge, a tunnel barrier layer made of alumina is formed. Finally, a second ferromagnetic layer made of Co is formed so as to overlap the first ferromagnetic layer via the tunnel barrier layer, thereby completing a cross-electrode type ferromagnetic tunnel junction device. In this method, the magnetoresistance change rate is a maximum of 18%.
Is obtained.

Another known example is disclosed in Japanese Patent Application Laid-Open No. 5-632.
No. 54, JP-A-6-244777, JP-A-8
JP-A-70148, JP-A-8-70149, JP-A-8-316548, and 1997, Journal of the Japan Society of Applied Magnetics, vol. 21, pages 493-496. Here, as a method of forming the tunnel barrier layer, A
A method has been proposed in which after forming an l layer, the layer is exposed to the atmosphere to grow alumina.

In order to apply the TMR element to a device such as a magnetic head or a magnetic memory, it is necessary to reduce the effect of thermal noise by using a practical element having a somewhat low resistance value. This was not possible with the conventional tunnel barrier formation method. For example, the resistance value of an area of about 2 μm × 2 μm applied to a magnetic head is 10 k.
It is close to Ω and cannot be used at all as a magnetic head requiring a resistance value of about 50 Ω.

In the application to a magnetic head corresponding to high density, the magnitude of the signal output voltage is key. However, in the prior art, there is a problem that a sufficient current density cannot be obtained without deteriorating the element characteristics. Was. Further, in the prior art, the device characteristics vary greatly within a wafer or between lots, and it has been difficult to obtain a sufficient production yield for practical use.

It is considered that these problems are mainly caused by the conventional method of forming a tunnel barrier layer. In the method using oxygen glow discharge, active oxygen in the form of ions or radicals is used to oxidize the conductive layer, so that it is difficult to control a thin oxide film thickness, that is, to control element resistance. There is a problem that the tunnel barrier layer is contaminated and the bonding quality is deteriorated.

On the other hand, in the method based on the natural oxidation in the air, the dust in the air causes pinholes in the tunnel barrier layer and is contaminated by moisture, carbon oxides, nitrogen oxides, etc. Had many problems. Furthermore, Journal of the Japan Society of Applied Magnetics (Vol. 22, No. 2-
4, pages 561 to 564 (1998) report experimental results showing that TMR does not depend on temperature.

However, in the above report, a tunnel magnetoresistive film composed of the upper and lower electrodes and an oxidized aluminum layer as a tunnel barrier layer interposed between the upper and lower electrodes is used in a manufacturing process thereof. Although it is shown that the value of the TMR ratio and the value of the resistance R do not change depending on the temperature at the time of annealing, there is no disclosure regarding the influence on heat generation at the time of using the magnetic reproducing head.

Further, in the journal of the Japan Society of Applied Magnetics, the resistance value of the obtained tunnel magnetoresistive film is generally two orders of magnitude less than the limit resistance value that can be used for the head of a magnetic recording / reproducing apparatus. The tunnel magnetoresistive film obtained by the description of the Journal of the Japan Society of Applied Magnetics cannot be used as a sensor of a magnetic recording / reproducing apparatus. There is no suggestion.

In addition, JP-A-10-208218 and JP-A-10-93159 can be seen.
In any case, an inert metal layer which does not form an alloy with any of the lower ferromagnetic layer and the non-magnetic layer is formed on the barrier layer so as to reduce a pinhole generated in the tunnel barrier and obtain a larger magnetic change rate. There is a technique that employs a configuration in which the lower ferromagnetic layer is directly in contact with the substrate directly under the junction region between the nonmagnetic layer and the lower ferromagnetic layer, but the temperature dependence is not high. There is no disclosure of a tunnel magnetoresistive film having no tunnel.

[0018]

In general, an MR head can be said to be a key device in a large-capacity storage device because its high output characteristics can improve the recording density of a magnetic storage device. However, as described above, in order to have the side surface as a temperature sensor, the area where the thermal asperity is remarkable, that is, when the gap between the magnetic medium and the head is less than 40 nm, or when a flexible magnetic recording medium is used, it is not used. It was extremely difficult to do.

Therefore, it is difficult to use an MR head in a magnetic tape device or a floppy disk device using a flexible magnetic recording medium having a magnetic recording layer formed on a plastic substrate such as polyethylene terephthalate due to a remarkable thermal asperity. Or impossible, it has been difficult to improve the recording density.

Further, even in a magnetic disk drive using a magnetic medium having high hardness, the gap between the magnetic medium and the head is limited to 40.
In a high-density recording area below nm, it is difficult or impossible to use an MR head unless special measures are taken. Accordingly, an object of the present invention is to improve the above-mentioned drawbacks of the prior art, to solve the above-mentioned problem of thermal asperity, which is an essential drawback of the conventionally used MR head, and to solve the problem of the conventionally used MR head. This is to realize a large-capacity magnetic storage device by making it possible to apply the MR head to an area where the head could not be used.

[0021]

SUMMARY OF THE INVENTION The present invention basically employs the following technical configuration to achieve the above object. That is, the first according to the present invention
The aspect of the present invention relates to a magnetic storage device comprising a magnetic recording medium and a magnetic recording / reproducing head arranged and set at a predetermined interval from the magnetic recording medium. The head section is a ferromagnetic tunnel junction magnetoresistive film composed of a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer sandwiched between the first and second ferromagnetic layers. And the ferromagnetic tunnel junction magnetoresistive film is configured such that the resistance value of the film exhibits a substantially constant value of 5 × 10 ⁻⁵ Ωcm ² or less despite temperature changes. Recording and playback head,
According to a second aspect of the present invention, in a magnetic storage device for performing information recording / reproducing by using a magnetic recording medium and a magnetic recording / reproducing head, the magnetic recording / reproducing head has a first strength for generating a magnetoresistance effect. A read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between a magnetic layer and a second ferromagnetic layer detects a magnetic flux from a magnetic signal recorded on a magnetic medium by a reproducing element. And a recording head for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap of a magnetic core sandwiching an excitation coil. The resistance of the ferromagnetic tunnel junction magnetoresistive film of the magnetic recording / reproducing head is 5 × 10
^-5 Ωcm ² or less.

A third aspect of the present invention is a magnetic recording / reproducing head used in a magnetic storage device for recording / reproducing information by using a magnetic recording medium and a magnetic recording / reproducing head. Magnetic flux from a magnetic signal recorded on a magnetic medium by a reproducing element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between a ferromagnetic layer and a second ferromagnetic layer. When manufacturing a magnetically sensitive read head, the tunnel barrier layer of the magnetic read / write head is formed of a metal or metalloid layer by a physical vapor deposition method in a vacuum, and then oxygen or nitrogen is placed in a vacuum. And a method of manufacturing a magnetic recording / reproducing head configured to naturally oxidize or nitride a layer made of the metal or metalloid. In manufacturing a magnetic storage device that performs information recording / reproduction with a raw head, the magnetic recording / reproduction head has a structure in which a tunnel barrier layer is sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. A reproducing head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a reproducing element using a magnetic tunnel junction magnetoresistive film is used, and a tunnel barrier layer of the magnetic recording / reproducing head is used. After forming a metal or metalloid layer by physical vapor deposition in a vacuum, oxygen or nitrogen is introduced into the vacuum to spontaneously oxidize or nitride the metal or metalloid layer. Is a method for manufacturing a magnetic storage device configured as described above.

Further, as another aspect according to the present invention, the magnetic recording / reproducing head is provided between the recording medium and the magnetic recording / reproducing head, particularly when the recording medium is a hard recording medium. If the magnetic recording / reproducing head is allowed to operate in a state where the gap is 40 nm or less, or if the recording medium is a hard recording medium, the magnetic recording / reproducing head is connected to the recording medium. This is a magnetic storage device that is set so that it can be driven under the condition that the gap between the magnetic recording / reproducing head is 40 nm or less.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS That is, in the present invention, among the magnetic recording / reproducing heads, particularly the magnetic reproducing head, the ferromagnetic tunnel junction is formed of a thin insulator having a thickness of several nm between two ferromagnetic layers. The tunnel barrier layer has a structure sandwiching the tunnel barrier layer, and the tunnel barrier layer has such a characteristic that the resistance value is low and the resistance value has substantially no temperature dependency.

That is, in this configuration, when an external magnetic field is applied in the plane of the ferromagnetic layer with a constant current flowing between the ferromagnetic layers, the magnetoresistance changes according to the relative angle of the magnetization of the two magnetic layers. Since the effect phenomenon appears, it is called a ferromagnetic tunnel junction magnetoresistance effect (TMR). When the magnetization directions are parallel, the resistance value is minimum, and when the magnetization directions are antiparallel, the resistance value is maximum. Becomes Therefore, by providing a coercive force difference between the two magnetic layers, a parallel and anti-parallel state of magnetization can be realized according to the strength of the magnetic field, and the magnetic field can be detected by a change in the resistance value. By using the above-described tunnel magnetoresistive film, thermal asperity is reduced, so that even if the magnetic reproducing head is brought extremely close to the recording medium, there is no possibility of erroneous detection of a signal. Alternatively, it is possible to easily obtain a magnetic recording / reproducing apparatus using the magnetic reproducing head.

[0026]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of a magnetic reproducing head and a magnetic recording / reproducing apparatus according to the present invention. That is, FIG. 1D and FIG.
FIG. 3 shows a configuration of a specific example of a magnetic reproducing head according to the present invention, in which, in the figure, a magnetic recording medium and a magnetic recording / reproducing head arranged and set at a predetermined interval from the magnetic recording medium; In the magnetic storage device comprising: a magnetic recording / reproducing head, the reproducing head comprises a first ferromagnetic layer 11, a second ferromagnetic layer 14, and the first and second ferromagnetic layers. Tunnel barrier layer 1 sandwiched between 11 and 14
3 and 24, and the ferromagnetic tunnel junction magnetoresistive film 100 has a resistance value of 5 despite the temperature change. An air recording / reproducing head 200 configured to exhibit a substantially constant value of × 10 ⁻⁵ Ωcm ² or less is shown.

A specific example of the entire structure of the magnetic reproducing head according to the present invention is as shown in FIG. 3 or FIG. 4, and the above-described ferromagnetic tunnel junction magnetoresistive film 100 is , 33 in FIG. 3 or 33 in FIG. The temperature coefficient of the ferromagnetic tunnel junction magnetoresistive film 100 used in the magnetic reproducing head 200 used in the present invention is preferably, for example, within ± 0.15% / ° C., and more preferably. The temperature coefficient of the ferromagnetic tunnel junction magnetoresistance effect film 100 is within ± 0.04% / ° C.

Further, it is necessary that the thickness of the tunnel barrier layer used in the present invention is as thin as possible, and is generally several nm or less, specifically, for example, 5 nm or less, more preferably. Is 2 nm or less. The magnetic recording medium (not shown) used as the target of the magnetic reproducing head 200 in the present invention is a flexible magnetic recording medium in which a magnetic recording layer is formed on a base such as a synthetic resin such as polyethylene terephthalate. Alternatively, the magnetic recording medium may be a hard magnetic recording medium formed of a substrate such as glass, aluminum, or a hard synthetic resin.

The ferromagnetic tunnel junction magnetoresistive film 100 according to the present invention has a low resistance as described above and has almost no temperature dependence of the resistance. Even if the magnetic reproducing head 200 generates heat due to contact with a recording medium or the like during the recording / reproducing operation, the change in the resistance value is small. This is particularly effective when a recording / reproducing operation is performed on a flexible recording medium, and when the recording medium is a hard recording medium, the recording / reproducing operation is performed. The magnetic reproducing head 200 in the middle
It is possible to set the gap with the recording medium (not shown) to a smaller gap than before.

More specifically, the gap is, for example, 40 n
m or less. The magnetic reproducing head unit 200 according to the present invention is the same as that shown in FIG.
As shown in (d) and FIG. 2 (f), the first ferromagnetic layer 11
, Second ferromagnetic layer 14 and the first and second ferromagnetic layers 1
Ferromagnetic tunnel junction magnetoresistive film 10 composed of tunnel barrier layers 13 and 24 sandwiched between layers 1 and 14
0, and the magnetic field from the magnetic signal recorded on the magnetic medium is sensed by the ferromagnetic tunnel junction magnetoresistive film 100.

The magnetic reproducing head 200 according to the present invention
Is a ferromagnetic tunnel junction magnetoresistive film 100 described above.
For example, as shown in FIG. 3 or FIG. 4, the overall configuration of the magnetic reproducing head 200 is such that the It includes a recording head unit 300 for recording a magnetic signal on a magnetic medium (not shown) by a leakage magnetic flux generated from a magnetic gap of the core 37.

In the present invention, the tunnel barrier layer 13 or 24 constituting a part of the ferromagnetic tunnel junction magnetoresistive film 100 is formed by oxygen on at least the surface of a conductive layer made of metal or metalloid. It is desirable that a natural oxide film is present. In the present invention, the natural oxide film is preferably formed by oxygen supplied under a vacuum.

The tunnel barrier layer 13 according to the present invention
Or the conductive layer made of the metal or metalloid constituting the metal layer 24 is desirably a layer made of a metal or metalloid formed by physical vapor deposition in a vacuum. Furthermore,
In the present invention, the tunnel barrier layer 13 or 24 is
A layer made of a metal or metalloid formed by physical vapor deposition in a vacuum is formed by continuously performing a natural oxidation treatment in the presence of oxygen in a vacuum without breaking the vacuum state. Is desirable.

On the other hand, in the present invention, in addition to the method of forming a native oxide film on the metal or metalloid layer,
For example, it may be formed by naturally nitriding a metal or metalloid layer formed by physical vapor deposition in a vacuum with nitrogen. Even in that case, it is desirable to perform the nitriding treatment in a vacuum.

In the present invention, the metal or metalloid layer constituting the tunnel barrier layer is preferably aluminum (Al). Further, in the present invention, Mg or a lanthanoid can be used in addition to aluminum (Al) as the metal or metalloid layer constituting the tunnel barrier layer.

The magnetic reproducing head 200 according to the present invention
The shape of the magnetic recording medium used is not particularly limited, for example, the shape of the recording medium is
It may be disk-shaped or tape-shaped. Here, the magnetic reproducing head 200 according to the present invention.
An example of the entire configuration will be described in more detail with reference to FIG. 3 or FIG.

That is, in the magnetic recording / reproducing head 200, the two layers sequentially laminated on the ceramics serving as the sliders.
The two opposing first magnetic shields S1 and second magnetic shields S2, and the ferromagnetic tunnel junction magnetoresistive film 100 existing between the two opposing first and second magnetic shields S1 and S2. , And a magnetic shield of one of the first magnetic shield film S1 and the second magnetic shield film S2, for example, the second magnetic shield S2. Is also used as one magnetic pole film, for example, the first magnetic pole film P1, and the coil 38 sandwiched between insulators (not shown) is provided on the opposite side of the first magnetic pole film P1 from the magnetoresistive effect reproducing element 100. And the other magnetic pole, that is, the second magnetic pole film P2,
And a recording head 300 for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap provided between the first and second magnetic pole films P1 and P2. This is a magnetic recording / reproducing head.

The configuration of the magnetic recording layer constituting the recording medium used in the present invention is not particularly limited. For example, the magnetic recording layer is formed by physical vapor deposition. It is desirable that the magnetic thin film is formed. A magnetic reproducing head 2 having a ferromagnetic tunnel junction device 100 having a resistance value and a signal output voltage characteristic necessary for practical use and having improved production yield for the purpose of eliminating the conventional disadvantages.
A specific example of the basic configuration of the manufacturing method of No. 00 will be described below.

That is, in the method of manufacturing the ferromagnetic tunnel junction device 100 having the structure in which the tunnel barrier layer 13 is interposed between the first ferromagnetic layer 11 and the second ferromagnetic layer 14, the first ferromagnetic layer 11, in the step of continuously forming the tunnel barrier layer 13 and the second ferromagnetic layer 14 in vacuum, after forming the first ferromagnetic layer 11, and after forming a conductive layer made of metal or semiconductor Introducing oxygen into a vacuum, and naturally oxidizing the surface of the conductor layer to form a tunnel barrier layer,
And thereafter forming a second ferromagnetic layer 14.

In the present invention, the tunnel barrier layer 13 is provided between the first ferromagnetic layer 11 and the second ferromagnetic layer 14.
In the method of manufacturing the ferromagnetic tunnel junction magnetoresistive film 100 (TMR film) having a structure sandwiching the first ferromagnetic layer 11, the tunnel barrier layer 100, and the second ferromagnetic layer 14,
In the step of continuously forming the first ferromagnetic layer 11 in a vacuum, oxygen is introduced into the first ferromagnetic layer 11
A step of oxidizing the surface of the ferromagnetic layer 11 and a step of forming a conductive layer made of a metal or a semiconductor, introducing oxygen into a vacuum, and naturally oxidizing the surface of the conductive layer to form a tunnel barrier layer. And thereafter forming a second ferromagnetic layer 14.

Hereinafter, a method of manufacturing the magnetic reproducing head 200 according to the present invention will be described in detail. As shown in FIG. 1, an underlayer (10), a first ferromagnetic layer (11), and a conductive layer (12) are continuously formed in a vacuum (FIG. 1).
(A)) Pure oxygen is introduced without breaking vacuum, and the surface of the conductive layer 12 is naturally oxidized to form a tunnel barrier layer 13 (FIG. 1B).

FIG. 1B shows a case where an unoxidized portion of the conductive layer remains at the interface with the first ferromagnetic layer (11) even after the oxidation of the conductive layer. Depending on the conditions, complete oxidation is possible. After exhausting oxygen,
A second ferromagnetic layer (14) is formed (FIG. 1C). In FIG. 1D, the antiferromagnetic layer (1) is further formed on the second ferromagnetic layer.
5) is formed.

The magnetization of the second ferromagnetic layer is fixed by the exchange coupling magnetic field generated at the interface between the antiferromagnetic layer and the second ferromagnetic layer. Only the first ferromagnetic layer has sensitivity to an external magnetic field, and a magnetoresistive effect corresponding to a change in the direction of magnetization between the first ferromagnetic layer and the second ferromagnetic layer can be obtained. . In the above method, the oxide layer can be grown in a clean atmosphere that is not affected by the impurity gas while maintaining the thermal equilibrium state, so that a high-quality tunnel barrier layer can be formed with good controllability. Further, by controlling the oxygen pressure and the substrate temperature, it is possible to obtain an element having a low resistance value and a high current density necessary for application of a device such as a magnetic head. Further, a device having excellent uniformity of device characteristics in a wafer and reproducibility between lots can be obtained.

In the case where Fe, Co, Ni or an alloy containing them is used for the ferromagnetic layer, Al having a smaller value than the surface free energy of the ferromagnetic layer is selected as the conductive layer, so that the underlying layer can be formed. Good coverage is possible for one ferromagnetic layer. As a result, in the completed device, good characteristics without an electrical short between the ferromagnetic layers due to pinholes can be obtained. In addition, since the free energy of formation of Al per atom of oxygen is larger than that of Fe, Co, and Ni, alumina serving as a tunnel barrier layer is thermally stable at the bonding interface.

When Mg or a metal belonging to the lanthanoid is selected for the conductive layer, the same reason as described above can be obtained, as well as good coverage of the underlying first ferromagnetic layer (11) and a more thermally stable tunnel barrier. A layer is obtained. FIG. 5 shows an example of the element size dependence of the resistance value of the TMR film obtained by the above method.

In FIG. 5, the track width is based on the assumption that the TMR is applied to a magnetic head, and substantially indicates the size of the TMR film. In this case, for example, the track width 2 μm is 2 μm.
The dimension of m × 2 μm, 10 μm means 10 μm × 10 μm. It is practical that the resistance value is several tens of ohms in a dimension of 2 μm × 2 μm. Further, according to the present method, it is possible to grow a tunnel barrier oxide layer while maintaining a thermal equilibrium state in a clean atmosphere unaffected by an impurity gas, so that a high-quality tunnel barrier layer can be formed with good controllability. Therefore, a TMR film having a thinner tunnel barrier layer with lower resistance can be obtained by controlling the oxygen pressure and the substrate temperature.

In this method, as shown in FIG. 1, the underlayer (10), the first ferromagnetic layer (11), the conductive layer (12)
Is continuously formed in a vacuum (FIG. 1A), pure nitrogen is introduced without breaking the vacuum, and the surface of the conductive layer 12 is naturally nitrided to form a tunnel barrier layer 13 (FIG. 1B). )) Like the oxide film, the nitride film can also be a tunnel barrier layer.

Also in this case, as in the case of oxidation, when Fe, Co, Ni, or an alloy containing them is used for the ferromagnetic layer, Al having a value smaller than the surface free energy of the ferromagnetic layer is used as the conductive layer. By selecting the above, it becomes possible to provide good coverage to the first ferromagnetic layer serving as a base.
As a result, in the completed device, good characteristics without an electrical short between the ferromagnetic layers due to pinholes can be obtained.

Since the free energy of formation of Al per atom of nitrogen is larger than that of Fe, Co, and Ni, aluminum nitride serving as a tunnel barrier layer is thermally stable at the junction interface. When Mg or a metal belonging to the lanthanoid is selected for the conductive layer, the first underlying layer is used for the same reason.
And a thermally stable tunnel barrier layer can be obtained together with good covering properties of the ferromagnetic layer (11).

Next, a second embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. As shown in FIG. 2, after forming the first ferromagnetic layer (11), a step of introducing oxygen into vacuum to form an oxide layer (21) on the surface is added. When the conductive layer (12) is formed, oxygen diffusion occurs from the first ferromagnetic layer (11) to the conductive layer (12), and an oxide layer (23) is also formed on the conductive layer (12) side.

In this method, the oxide layer (24) of the conductive layer (12) is formed on both interfaces in contact with the ferromagnetic layer, so that a device having more excellent thermal stability is realized. In order to form a stable oxide layer on the side of the conductive layer (12), the free energy of formation per atom of oxygen of the conductive layer (12) must be larger than the element constituting the first ferromagnetic layer (11). is necessary.

When Fe, Co, Ni or an alloy containing them is used for the ferromagnetic layer, the conductive layer (12) is made of A
It is effective to use metals belonging to l, Mg, and lanthanoids. Also in this method, nitrogen can be used instead of oxygen. A head using the TMR formed by the above-described manufacturing method was manufactured for the first time, and its magnetoresistance effect characteristics were examined in detail.

Even with the dimensions of the TMR film of 1 μm × 1 μm, an element of several tens of Ω was obtained by adjusting the tunnel barrier film, which was practical. The resistance value of the TMR film according to the present method is 5 × 10 ⁻⁵ Ωcm by controlling the tunnel barrier film.
² or less. Furthermore, it has been surprisingly found that the element having this practical resistance does not change in resistance even when the temperature is changed.

This is because the development of a TMR head has not been actually performed at all because the resistance of the TMR film is high, and no head having a practical resistance has been reported. This is a new discovery that was not pointed out at all. FIG. 6 shows the result of the experiment and the result of a spin valve head that has been reported conventionally. It was confirmed that the resistance of the prototype device was almost constant from a low temperature region to a practical region exceeding 100 ° C.

The temperature coefficient of the resistance value was as extremely small as within ± 0.15% / ° C., and preferably within ± 0.04% / ° C. On the other hand, in the conventionally known spin valve head, as shown in FIG. 6, the resistance monotonously increases with the temperature, and shows characteristics that support the thermal asperity. The temperature coefficient of the resistance value is as large as + 0.27% / ° C.

In a normal MR head which is not a spin valve, the temperature coefficient of the resistance value is “IEEETrans.on”.
Magn. , Vol. 32, no. 1 (1996) 3
8 "states a value of + 0.15% / ° C.
In addition, the conventional TMR element has a resistance value that is two to three orders of magnitude larger, and cannot be considered to be applied to a magnetic head in the first place. Naturally, it cannot solve thermal asperity, which is a major problem of an MR head. Was.

On the other hand, this time, in the head manufactured according to the present invention, an MR head which eliminates thermal asperity is realized for the first time by realizing electric conduction by a pure tunnel barrier. Next, the results of a comparative experiment performed to compare the thermal asperity characteristics of the magnetic reproducing head 200 according to the present invention with those of the conventional magnetic reproducing head are shown in FIGS. 7 and 8. FIG.

That is, FIG. 7A shows the flying height of the magnetic reproducing head in the magnetic reproducing head manufactured according to the prior art.
For example, this shows a part of a reproduction waveform of the resistance value of the spin valve head when the flying height is set to 20 nm. As is clear from the drawing, the reproduction waveform is the magnetic reproduction head. Once touches the recording medium,
In the initial stage, the resistance value once drops, but immediately after the effect of heat generated as a result of the contact, the resistance value sharply increases, and thereafter, a curve is drawn in which the resistance value gradually decreases.

The protruding waveform portion shown in the waveform in FIG. 7A indicates a state where a magnetic signal is detected. Therefore, when the temperature of the magnetic reproducing head rises due to the magnetic reproducing head coming into contact with the recording medium,
A malfunction occurs in the detection of the magnetic signal portion, and an information error occurs.

Therefore, conventionally, when a magnetic reproducing head is used for a flexible recording medium, the magnetic reproducing head cannot be brought very close to the recording medium, and the recording density of information is reduced. It was impossible to improve it, and there were many false positives. Similarly, even when a hard recording medium is used, it is impossible to perform the recording / reproducing operation by bringing the magnetic reproducing head extremely close to the recording medium for the same reason. It was difficult to greatly improve.

On the other hand, in the magnetic reproducing head 200 according to the present invention, as shown in FIG. 7B, the resistance value of the ferromagnetic tunnel junction magnetoresistive film 100 has no temperature dependency. If the magnetic reproducing head 200 is not
Indicates that the resistance value does not change even when the temperature of the magnetic reproducing head 200 increases due to contact with the recording medium. As a result, the magnetic reproducing head 200 according to the present invention has flexibility. It is also possible to use a certain recording medium, and when using a hard recording medium, it is possible to perform the recording / reproducing operation by bringing the magnetic reproducing head extremely close to the recording medium, and conversely. Indicates that the recording density of the recording medium can be significantly improved.

Therefore, by applying an MR head using a TMR film to an area where an MR head cannot be used due to a problem of thermal asperity, it is possible to realize a magnetic storage device having a greatly increased recording capacity. It became. Specifically, a flexible magnetic recording medium having a magnetic recording layer formed on a plastic substrate such as polyethylene terephthalate is used, and the magnetic medium and the magnetic head frequently contact a magnetic tape device or a floppy disk device, or Even in a magnetic disk device using a hard magnetic medium, the gap between the magnetic medium and the head is a high-density recording area in which the gap is less than 40 nm.

That is, in the embodiment of the present invention, the gap between the magnetic recording / reproducing head and the magnetic recording medium is 40 nm.
In the following magnetic recording / reproducing head used in a magnetic storage device in a region where thermal asperity frequently occurs in a normal MR head, the magnetic recording / reproducing head includes a first ferromagnetic layer and a second ferromagnetic layer which generate a magnetoresistance effect. A read head for sensing magnetic flux from a magnetic signal recorded on a magnetic medium by a read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between ferromagnetic layers of The magnetic recording / reproducing head comprises a recording head for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap of a magnetic core sandwiching an excitation coil.

FIG. 8 shows the results of measurement of the change in the gap between the magnetic recording / reproducing head and the magnetic recording medium and the amount of baseline fluctuation using the conventional magnetic reproducing head and the magnetic reproducing head according to the present invention. Shown in That is, FIG. 8 is a comparative experiment showing the relationship between the flying height of the magnetic reproducing head and the thermal asperity. The recording medium used in the experiment was formed by forming a NiP plating layer on an aluminum substrate, The coercive force of CoCrPt is 2
A disk medium on which a 200 Oersted (Oe) recording layer was formed and a carbon protective film was formed was used.

The medium has a glint height of 30 nm. The gap between the medium and the magnetic head slider was changed by changing the rotation speed of the medium. FIG. 8 shows the relationship between the flying height and the variation of the baseline of the head signal (in dB with respect to the noise at the flying height where no variation occurs).

In the figure, a magnetic reproducing head (TM) according to the present invention is shown.
R) and a conventional magnetic reproducing head (MR) are shown in a graph. As is apparent from FIG. 8, it can be seen that the fluctuation amount of the baseline in the conventional magnetic reproducing head (MR) sharply increases when the flying height of the magnetic reproducing head is less than 40 nm.

The reason for this is that, in the conventional magnetic reproducing head (MR), the frequency of contact with the recording medium sharply increases, and as a result, the output corresponding to the temperature change of the conventional magnetic reproducing head (MR) element. Is detected, which is a phenomenon generally called thermal asperity. On the other hand, in the magnetic reproducing head (TMR) according to the present invention, it can be seen that the fluctuation of the baseline seen in the conventional magnetic reproducing head (MR) hardly occurs.

The magnetic recording / reproducing head 2 according to the present invention
A magnetic recording / reproducing head characterized in that the resistance of the ferromagnetic tunnel junction magnetoresistive effect film No. 00 is 5 × 10 ⁻⁵ Ωcm ² or less. The ferromagnetic tunnel junction magnetoresistive film 100 of the present invention has such a low resistance value because, for example, the tunnel barrier layer 13 of the magnetic recording / reproducing head 200 is in a vacuum. After forming a layer made of a metal or metalloid by the physical vapor deposition method, oxygen is introduced into a vacuum, and the layer made of the metal or metalloid is naturally oxidized. Can be

Further, in another embodiment of the present invention, there is a magnetic recording / reproducing head 400 using the magnetic reproducing head 200 described above. That is, as shown in FIGS. 3 and 4, in the magnetic storage / reproduction head 400 that performs information recording / reproduction with a magnetic recording medium and a magnetic recording / reproduction head,
The magnetic storage reproducing head 400 has a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer 13 is sandwiched between a first ferromagnetic layer 11 and a second ferromagnetic layer 14 that generate a magnetoresistance effect. A magnetic reproducing head 200 that senses magnetic flux from a magnetic signal recorded on the magnetic medium by a reproducing element using the magnetic recording medium 100, and a leakage magnetic flux generated from a magnetic gap of the magnetic core 37 sandwiching the exciting coil 38, causes a magnetic flux on the magnetic medium. And a magnetic recording head 300 for recording a magnetic signal to the magnetic recording / reproducing head 200. The resistance of the ferromagnetic tunnel junction magnetoresistive film of the magnetic recording / reproducing head 200 is 5 × 10 ⁻⁵ Ω.
a magnetic recording and reproducing head 400 cm ^{2 or} less.

The magnetic recording / reproducing head 40 according to the present invention
0, the temperature coefficient of the ferromagnetic tunnel junction magnetoresistive film is preferably within ± 0.15% / ° C., and more preferably the temperature coefficient of the ferromagnetic tunnel junction magnetoresistive film. Is within ± 0.04% / ° C. Further, the thickness of the tunnel barrier layer used in the magnetic recording / reproducing head 400 according to the present invention is desirably 5 nm or less, more desirably 2 nm or less.

Further, similarly to the above-described embodiment according to the present invention,
The magnetic recording medium used in the magnetic recording / reproducing head 400 according to the present invention may be a flexible magnetic recording medium in which a magnetic recording layer is formed on a substrate such as a synthetic resin. The recording medium may be a hard magnetic recording medium in which a magnetic recording layer is formed on a hard base. Therefore, in the magnetic recording / reproducing head 400 according to the present invention, the magnetic recording / reproducing head is allowed to operate in a state where the gap with the recording medium is 40 nm or less.

Further, the tunnel barrier layer 13 used in the present invention preferably has a natural oxide film formed by oxygen on at least the surface of the conductive layer made of metal or metalloid. The natural oxide film is desirably formed by oxygen supplied under a vacuum. On the other hand, the metal or metalloid conductive layer constituting the tunnel barrier layer is preferably a metal or metalloid layer formed by physical vapor deposition in a vacuum.

In the same manner as described above, the tunnel barrier layer 13 is formed by spontaneously oxidizing a metal or metalloid layer formed by physical vapor deposition in a vacuum in the presence of oxygen in a vacuum. It may be formed by processing,
Alternatively, in the magnetic recording / reproducing head, the tunnel barrier layer of the magnetic reproducing head is formed by naturally nitriding a metal or metalloid layer formed by physical vapor deposition in vacuum with nitrogen. May be used.

Further, in the magnetic recording / reproducing head 400 according to the present invention,
Two opposing first and second magnetic shields laminated on a ceramic serving as a slider, and the ferromagnetic tunnel existing between the two opposing first and second magnetic shields A read head using a read element using a junction magnetoresistive film, and one of the first and second magnetic shield films used as a first magnetic pole film also serves as a first magnetic pole film. On the side opposite to the magnetoresistive effect reproducing element, a coil and a second magnetic pole film sandwiched between insulators are laminated on the first magnetic pole and provided between the first and second magnetic poles. It is desirable to include a recording head that records a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap.

Similarly, it is desirable that the magnetic recording layer constituting the recording medium used in this embodiment according to the present invention is a magnetic thin film formed by a physical vapor deposition method such as a sputtering method. . Hereinafter, specific examples of the present invention will be described in more detail with reference to the drawings. Embodiment 1 A first embodiment of the present invention will be described with reference to FIG. FIG.
Shows a magnetic recording / reproducing head using a ferromagnetic tunnel junction magnetoresistive film according to the present invention.

A recording / reproducing element 30 is formed on an Al ₂ O ₃ —TiO composite ceramic base 29 constituting a slider.
It is protected by an alumina protective film 32. Further, electrodes 31 for recording and reproduction are formed. As an example of the configuration of the recording / reproducing element, a configuration as shown in FIG. 3 can be applied. The element shown in FIG.
It is formed on l ₂ O ₃ -TiO composite ceramic substrate on.
The magnetic shield 36 made of two parallel magnetic films (first
In the magnetic shield S1 and the second magnetic shield S2), the lower magnetic shield S1 was formed by patterning a 1 μm-thick Co—Ta—Zr—Cr film by sputtering.

During the formation of the Co—Ta—Zr—Cr film, a unidirectional magnetic field was applied in the horizontal direction of FIG. Thereafter, an initial heat treatment was performed at 350 ° C. for 1 hour while applying a unidirectional magnetic field of 500 Oe in the easy axis direction of the Co—Ta—Zr—Cr film. The upper magnetic shield S2 was formed by patterning a Ni—Fe film by frame plating. Using the two magnetic shields S1 and S2 as upper and lower electrodes, a pattern 3 of the ferromagnetic tunnel junction magnetoresistive film 100 (TMR film) is interposed between the two magnetic shields S1 and S2.
3, and magnetic field application films 34 and 35 for controlling the magnetic domains of the free layer were formed.

A ferromagnetic tunnel junction magnetoresistive film (TM
As shown in FIG. 1, a 30 nm-thick base Ta film 10 and a 10 nm-thick Ni--Fe film as a free layer having sensitivity to a medium magnetic field are sequentially formed from the lower shield side as shown in FIG.
A first ferromagnetic layer 11 composed of a film and a conductive layer 12 composed of an Al film having a thickness of 2 nm were continuously deposited by sputtering. For this film formation, a high frequency magnetron sputtering apparatus equipped with four 4-inch φ targets was used. The sputtering conditions are all as follows: background pressure 1 × 10 ⁻⁷ Torr or less, Ar pressure 3 mTo
rr and high frequency power 200 W.

Next, pure oxygen is introduced into the sputtering apparatus,
Oxygen pressure is set in the range of 10 mTorr to 200 Torr.
After holding for 0 minutes, the surface of the Al conductive layer was oxidized to form the tunnel barrier layer 13. After evacuating oxygen and reaching the background pressure, a second ferromagnetic layer 14 made of a 20 nm thick Co—Fe film and an antiferromagnetic film 15 made of a 20 nm thick Pt—Mn film are sputter-deposited, and TMR is performed. The film was completed.

According to this method, the oxide layer can be grown in a clean atmosphere which is not affected by the impurity gas while maintaining the thermal equilibrium state. Therefore, a high quality tunnel barrier layer can be formed with good controllability. Further, an element having a necessary low resistance value and high current density can be obtained by controlling the oxygen pressure and the substrate temperature. Further, a device having excellent uniformity of device characteristics in a wafer and reproducibility between lots can be obtained. Further, when forming the above-mentioned oxide layer, it is also effective to assist an appropriate amount of active species such as ozone and oxygen ions on the wafer surface with good controllability. As a method for generating the active species, ultraviolet irradiation, X-ray irradiation, or the like is effective. These are evenly distributed on the surface of the wafer to be oxidized, and
Irradiation must be performed with good controllability and reproducibility. At this time, it is necessary that the impurity gas is not released from the vacuum chamber wall. This requires a highly controlled equipment system. Conventionally, when oxidation is directly performed by using oxygen glow discharge, a low-resistance and high-quality tunnel barrier layer cannot be formed. This is considered to be due to the fact that, in addition to the difficulty in controlling the oxidation, this method originally caused the generation of impurity gas and uneven oxidation in the wafer surface. Table 1 shows the TMR films and their properties according to the present method,
In addition, the TMR film, the AMR film, the GMR (spin valve) film and the characteristics thereof in the conventional method are listed. TMR of the method
The film has a lower resistance than the conventional TMR film, and the temperature dependence of the resistance is extremely small. With a barrier layer thickness of 5 nm or less, a low resistance of 5 × 10 ⁻⁵ Ωcm ² or less can be obtained. More preferably, a low resistance and a high MR ratio are obtained at 2 nm or less. In a region where a low resistance of less than 1 × 10 ⁻⁸ Ωcm ² is realized, the MR ratio tends to be small.

[0081]

[Table 1]

Thereafter, an exchange coupling magnetic field is generated between the second ferromagnetic layer 14 and the antiferromagnetic layer 15 to change the magnetization of the second ferromagnetic layer 14 in a direction perpendicular to the ABS of FIG. The heat treatment was performed at 230 ° C. for 3 hours while applying a unidirectional magnetic field of 3 kOe in a direction perpendicular to the ABS surface. The direction of this magnetic field is orthogonal to the direction of the magnetic field when the lower shield is heat-treated first.

However, the lower shield Co-T
Since the a-Zr-Cr film has been heat-treated at 350 ° C. in advance, even if this heat treatment is performed, the direction of the axis of easy magnetization does not change, and the anisotropic magnetic field Hk is 8 Oe (8 Oe) and the magnetic shield is As was kept large enough. Next, a central region formed by patterning the ferromagnetic tunnel junction magnetoresistive film (TMR film) and the ferromagnetic tunnel junction magnetoresistive film (TMR film) at both ends thereof are formed.
Field applying film 3 for controlling the magnetic domain of the free layer of the film)
An edge region of 4, 35 was formed.

The magnetic field applying films 34 and 35 are made of Co—Cr—Pt.
A permanent magnet film made of It was important that the first magnetic layer and the second magnetic layer via the tunnel barrier film were not short-circuited by contact of the permanent magnet film with the side wall of the TMR pattern. In addition, it is necessary to insert a non-magnetic material between the permanent magnet film and the magnetic shield so that the permanent magnet film is magnetically separated from the magnetic shields above and below it. Thereafter, as described above, a 3 μm-thick film was formed by a frame plating method as a magnetic shield also used as an electrode.
A m-Ni—Fe film was patterned.

Further, the subsequent steps of the present invention, that is, the steps of manufacturing the magnetic recording / reproducing apparatus will be described with reference to FIG. After forming a 3 μm thick Ni—Fe film constituting the upper shield by frame plating, a magnetic gap was formed from alumina, and then a recording magnetic field generating coil 38 was formed. This coil is insulated by being sandwiched between the upper and lower sides by a photoresist.

First, a photoresist pattern serving as a lower insulator was formed on the above alumina magnetic gap, and was thermally cured at 250 ° C. for 1 hour. Next, a Cu coil was formed by frame plating, and a photoresist pattern serving as an upper insulator was formed. 250
Heat-treated at 1 ° C. for 1 hour. Further, a 4 μm-thick Ni—Fe film constituting the recording magnetic pole P2 was formed by frame plating. After forming the upper magnetic pole 37 which is the recording magnetic pole P2, a magnetic field of 1 kOe is applied in the direction of the easy axis of magnetization of the magnetic shield, and
Heat-treated at 1 ° C. for 1 hour. Thereby, the magnetic anisotropy of the upper magnetic pole 37 was stabilized.

Next, after forming lead-out patterns 39 and 40 for the electrodes of the reproducing section and the recording section, as shown in FIG. 9, the entire element was protected by an alumina sputtered film. Thereafter, in order to align the magnetizations of the antiferromagnetic layer of the TMR film and the second ferromagnetic layer in contact with the TMR film again, a unidirectional magnetic field of 3 kOe is applied in a direction perpendicular to the ABS surface at 250 ° C. Time heat treatment was performed.

The above elements were cut out from the wafer, processed into a slider shape for a magnetic disk device shown in FIG. 9, incorporated in an arm with a gimbal spring, and evaluated for recording and reproduction. In this head, even with the dimensions of the TMR film of 1 μm × 1 μm, an element of several tens Ω was obtained by adjusting the tunnel barrier film, which was practical. The resistance value of the TMR film according to the present method is 5 × 10 ⁻⁵ by controlling the tunnel barrier film.
Ωcm ² or less.

As a result of the recording / reproduction evaluation, even if the gap between the magnetic recording medium and the present head is changed and the size is reduced to a region of 40 nm or less, a medium called thermal asperity which has become remarkable in the conventional MR head. It has been clarified that generation of an error signal due to a change in the MR element temperature due to contact between the head and the head is not recognized in the present head.

To clarify the cause, the temperature change of the resistance of the reproducing element of this head was measured. As a result, it was surprisingly found that this element was an MR element whose resistance did not change even when the temperature was changed. This is a new discovery that has not been pointed out as a TMR head having a practical resistance value. FIG. 6 shows the result of the experiment and the result of a spin valve element that has been reported conventionally. It was confirmed that the resistance of the prototype device was almost constant from the liquid helium temperature to a practical region exceeding 100 ° C. The temperature coefficient of the resistance value was as extremely small as about -0.01% / ° C.

On the other hand, in the conventionally known spin valve head, as shown in FIG. 6, the resistance monotonically increases with the temperature, and shows characteristics that support the generation of thermal asperity. Temperature coefficient of resistance value is + 0.27% / ℃
And big. In a normal MR head that is not a spin valve, the temperature coefficient of the resistance value is “IEEETrans.on”.
Magn. , Vol. 32, no. 1 (1996) 3
8 "states a value of + 0.15% / ° C.

In the conventional TMR element, the resistance value is 2
Since it is three orders of magnitude larger, application to a magnetic head was not considered in the first place, and as a matter of course, it could not solve the thermal asperity which is a major problem of the MR head.
On the other hand, with the head manufactured this time, electric conduction by a pure tunnel barrier was realized for the first time,
An MR head that eliminates thermal asperity is realized.

As described above, in the magnetic recording / reproducing head used for the magnetic storage device in which the gap between the magnetic recording / reproducing head and the magnetic recording medium is 40 nm or less, the magnetic recording / reproducing head generates a magnetoresistance effect. A read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between a first ferromagnetic layer and a second ferromagnetic layer is used to read a magnetic signal recorded on a magnetic medium by a reproducing element. A magnetic recording / reproducing head including a reproducing head for sensing magnetic flux and a recording head for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap of a magnetic core sandwiching an exciting coil is realized.

The feature of this head is that the resistance of the ferromagnetic tunnel junction magnetoresistive film of the magnetic recording / reproducing head is 5 × 10 ^−5.
Ωcm ² or less. To achieve this, the tunnel barrier layer of the magnetic recording / reproducing head is formed by forming a layer made of metal or metalloid by physical vapor deposition in vacuum. It is a tunnel barrier layer formed by introducing oxygen into the layer and naturally oxidizing the layer made of the metal or metalloid. More preferably, the metal or metalloid layer is made of aluminum (Al).
It is to be.

Further, after the tunnel barrier layer of the TMR film is formed of a metal or metalloid layer by physical vapor deposition in a vacuum, nitrogen is introduced into the vacuum to remove the metal or metalloid. The same effect can be obtained even in the case of a tunnel barrier layer formed by naturally nitriding a layer formed.
More preferably, the metal or metalloid layer of the TMR film is aluminum (Al).

The magnetic recording medium combined with the present magnetic head is a flexible magnetic recording medium having a magnetic recording layer formed on a substrate such as polyethylene terephthalate,
The gap between the head and the medium is 40 nm or less. Further, the magnetic recording layer is a magnetic recording layer coated with magnetic particles. Further, the magnetic recording medium has a disk shape. Alternatively, the magnetic recording medium is in a tape shape.

Further, the magnetic recording layer is a magnetic thin film formed by a physical vapor deposition method such as a sputtering method. The magnetic recording medium has a disk shape. Alternatively, the magnetic recording medium is in a tape shape. In addition, the magnetic recording medium,
This is a magnetic recording medium in which a magnetic recording layer is formed on a substrate having high hardness such as glass or aluminum. Further, the magnetic recording layer of the magnetic recording medium is a magnetic thin film formed by a physical vapor deposition method such as a sputtering method. Further, the magnetic recording medium has a disk shape.

As a result of the present invention, when the magnetic recording medium combined with the present magnetic head is a flexible magnetic recording medium in which a magnetic recording layer is formed on a substrate such as polyethylene terephthalate, high-density recording exceeding 500 Mb per square inch is performed. A reproducing head is realized. In addition, when the magnetic recording medium is a magnetic recording medium in which a magnetic recording layer is formed on a hard substrate such as glass or aluminum, one square inch can be used without special measures to deal with thermal asperity. A high-density recording / reproducing head exceeding 10 Gb / h is realized.

Similar results can be obtained with the structure shown in FIG. 4 as the structure of the magnetic head of the present invention. That is, FIG. 4 shows a case where a TMR element having an individual electrode 41 which is not also used as a shield is formed in a gap between two magnetic shields 36 facing each other. In this specific example, the thickness of the lower shield layer S1 can be selected, for example, in the range of 0.3 μm to 3 μm. The ferromagnetic tunnel junction magnetoresistive film (TMR) The thickness of the base Ta film 10 is 2 nm to 200 nm, and the thickness of the free layer 11 is 1 n.
It can be appropriately selected in the range of m to 50 nm.

On the other hand, the thickness of aluminum (Al) used as the tunnel barrier layer 13 ranges from 0.3 nm to 3 nm.
nm, and the thickness of the magnetization fixed layer 14 is 1 nm to 5 nm.
The range of 0 nm and the thickness of the antiferromagnetic film 15 can be arbitrarily selected from the range of 5 nm to 200 nm. Also, a magnetic field application film 34 made of CoCrPt,
35 has a thickness of 3 to 300 nm, and has a magnetic shield S2.
Can be arbitrarily selected in the range of 0.3 μm to 4 μm.

The thickness of the recording magnetic pole 37 can be arbitrarily selected within the range of 0.5 μm to 5 μm. Second Embodiment FIG. 10 shows a magnetic storage device using the magnetic head (FIG. 9) shown in the first embodiment.

In FIG. 10, a magnetic recording / reproducing head 3 of the present invention is attached to a magnetic recording medium 2 rotated by a driving motor 1 by a suspension 4 and an arm 5 so as to face a magnetic storage surface. VCM) 6. The recording / reproducing operation is performed by a signal from a recording / reproducing channel 7 to the head, and the control unit 8 interlocks the recording / reproducing channel, the VCM for positioning the head, and the drive motor for rotating the medium.

FIG. 11 shows a magnetic storage device having the above-described basic configuration, in which the magnetic recording medium is a flexible magnetic recording medium having a magnetic recording layer formed on a substrate such as polyethylene terephthalate. The magnetic medium 26 is recorded and reproduced by an assembly 25 incorporating a magnetic head.
7 can also be taken out.

By using the magnetic head (FIG. 9) shown in the first embodiment, a storage device having a recording / reproducing system having no thermal asperity in a region where the gap between the medium and the head is 40 nm or less is realized. Further, the magnetic recording layer is a magnetic recording layer coated with magnetic particles. Also,
The magnetic recording layer may be a magnetic thin film formed by a physical vapor deposition method such as a sputtering method.

Third Embodiment FIG. 10 shows a magnetic storage device using the magnetic head (FIG. 9) shown in the first embodiment. In FIG. 10, a head 3 of the present invention is attached to a magnetic storage surface of a magnetic medium 2 rotated by a driving motor 1 by a suspension 4 and an arm 5 and tracked by a voice coil motor (VCM) 6. You.

The recording / reproducing operation is performed by a signal from the recording / reproducing channel 7 to the head. The recording / reproducing channel, the VCM for positioning the head, and the drive motor for rotating the medium are linked by the control unit 8. I have. In the magnetic storage device having the above basic configuration, the magnetic recording medium is a magnetic recording medium in which a magnetic recording layer is formed on a hard substrate such as glass or aluminum,
FIG. 12 shows an apparatus in which the magnetic recording layer of the magnetic recording medium is a magnetic thin film formed by a physical vapor deposition method such as a sputtering method, and the magnetic recording medium has a disk shape. Show.

The magnetic medium 57 is recorded and reproduced by an assembly 58 incorporating a magnetic head. By using the magnetic head (FIG. 9) shown in the first embodiment, a storage device having a recording / reproducing system without thermal asperity is realized in a region where the gap between the medium and the head is 40 nm or less. Embodiment 4 FIG. 13 shows that the magnetic recording medium is a flexible magnetic recording medium in which a magnetic recording layer is formed on a substrate such as polyethylene terephthalate, the gap between the head and the medium is 40 nm or less, and the magnetic recording medium has a tape shape. 1 shows a configuration of a magnetic storage device.

The magnetic recording layer may be a magnetic recording layer coated with magnetic particles, and the magnetic recording layer may be a magnetic thin film formed by a physical vapor deposition method such as a sputtering method. It may be. In this apparatus, the tape-shaped magnetic recording medium 44 supplied from the tape supply reel 45 is rotated by a roller 46, a roller 47, a roller 48, a roller 49, a capstan 50 whose rotation speed is controlled by a capstan motor 51, and the like. The running is controlled, and the side surface of the rotating drum 42 on which the magnetic head 43 is mounted is stably contacted.

The magnetic head applied to this device is shown in FIG.
This is the shape shown in FIG. The element 54 for recording / reproducing has the configuration described in the first embodiment, is formed on a base 53 serving as a slider, and is protected by a protective film 56 made of alumina.
Further, a terminal 55 for flowing a recording current and a reproduction current is formed. Although the curved portion on the upper surface in FIG. 14 smoothly contacts the tape-shaped magnetic medium, a thin air phase is formed due to the relative speed between the head and the medium. In this device, even if the air phase thickness is set to 40 nm or less, a storage device having a recording / reproducing system without thermal asperity is realized.

As is apparent from the description of each of the above-described embodiments, for example, the present invention is applied to a magnetic storage device that performs information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head. A magnetic read / write head using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. In manufacturing a read head that senses magnetic flux from a magnetic signal recorded on a medium, a tunnel barrier layer of the magnetic read / write head is made of metal or metalloid by physical vapor deposition in a vacuum. A method of manufacturing a magnetic recording / reproducing head, which is configured to introduce oxygen into a vacuum after forming a layer and spontaneously oxidize the layer made of the metal or metalloid. A the magnetic recording and reproducing head used in a magnetic memory device performing information recording and reproduction by the body and the magnetic recording and reproducing head, a first ferromagnetic layer and the second
Manufactures a read head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a read element using a ferromagnetic tunnel junction magnetoresistive film with a tunnel barrier layer sandwiched between ferromagnetic layers In doing so, after forming the tunnel barrier layer of the magnetic recording / reproducing head, a layer made of metal or metalloid by physical vapor deposition in a vacuum,
This is a method for manufacturing a magnetic recording / reproducing head configured to introduce nitrogen into a vacuum and nitride a layer made of the metal or metalloid.

Further, as still another aspect according to the present invention, when manufacturing a magnetic storage device for performing information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head, the magnetic recording / reproducing head is provided with a first magnetic recording / reproducing head. A read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between a magnetic layer and a second ferromagnetic layer detects a magnetic flux from a magnetic signal recorded on a magnetic medium by a reproducing element. And a tunnel barrier layer of the magnetic recording and reproducing head, after forming a layer made of metal or metalloid by physical vapor deposition in a vacuum,
A method for manufacturing a magnetic storage device configured to introduce oxygen into a vacuum and spontaneously oxidize a layer made of the metal or metalloid, further comprising a magnetic recording medium and a magnetic recording / reproducing head for information recording / reproducing. When manufacturing a magnetic storage device for performing the following, the magnetic recording / reproducing head has a structure in which a tunnel barrier layer is sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. A reproducing head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a reproducing element using a magnetic recording and reproducing head, and the tunnel barrier layer of the magnetic recording and reproducing head is physically A method for manufacturing a magnetic memory device, wherein a layer made of a metal or a metalloid is formed by a vapor phase growth method, and then nitrogen is introduced into a vacuum to nitride the layer made of the metal or a metalloid. A.

[0112]

The magnetic reproducing head and the magnetic recording / reproducing apparatus according to the present invention adopt the above-mentioned technical configuration, so that the disadvantages of the prior art can be improved, and the resistance can be reduced even though there is no temperature dependency. It has the characteristic that it is, as a result, it can solve the problem of thermal asperity which is an essential drawback of the conventionally used MR head, and also in the area where the conventionally used MR head could not be used. The effect that it becomes possible to apply the MR head can be obtained.

Further, in the present invention, since the problem of thermal asperity can be solved, the medium surface can be extremely smoothed in a high-density magnetic recording area in which the gap between the magnetic medium and the head is smaller than 40 nm, or a compensation circuit can be used. It is possible to realize a large-capacity magnetic storage device by applying an MR head without taking special measures such as providing a magnetic head.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view for explaining a process procedure in a specific example of a method for manufacturing a magnetic reproducing head according to the present invention.

FIG. 2 is a cross-sectional view illustrating a process procedure in another specific example of the method for manufacturing a magnetic reproducing head according to the present invention.

FIG. 3 is a perspective view schematically illustrating an overall configuration of a specific example of a magnetic reproducing head according to the present invention.

FIG. 4 is a perspective view schematically illustrating an overall configuration of another specific example of the magnetic reproducing head according to the present invention.

FIG. 5 is a magnetic recording / reproducing head (TM) using a ferromagnetic tunnel junction magnetoresistive effect film 100 according to the present invention.
3 is a graph showing a relationship between a resistance value of R) and a track width.

FIG. 6 is a magnetic recording / reproducing head (TM) of the present invention.
9 is a graph showing the temperature dependence of the resistance value of R) and the conventional spin valve head.

FIG. 7A is a conventional magnetic reproducing head (MR).
FIG. 7B shows an example of a reproduced waveform of the resistance value in FIG.
5 is a graph showing an example of a reproduced waveform of a resistance value in a magnetic recording / reproducing head (TMR) of the present invention.

FIG. 8 is a graph showing a relationship between a flying height and a base line fluctuation amount in a conventional magnetic reproducing head (MR) and a magnetic recording / reproducing head (TMR) of the present invention.

FIG. 9 is a perspective view showing an example of the configuration of a specific example of a magnetic recording / reproducing head according to the present invention.

FIG. 10 is a schematic diagram showing a configuration of a specific example of a magnetic storage device using a magnetic recording / reproducing head (TMR head) according to the present invention.

FIG. 11 is a schematic diagram showing a configuration of a specific example of a magnetic storage device using a magnetic recording / reproducing head (TMR head) according to the present invention.

FIG. 12 is a schematic diagram showing a configuration of a specific example of a magnetic storage device using a magnetic recording / reproducing head (TMR head) according to the present invention.

FIG. 13 is a schematic diagram of a magnetic storage device for using a narrow recording medium such as a tape using a magnetic recording / reproducing head (TMR) according to the present invention.

FIG. 14 is a perspective view showing the configuration of a specific example of a magnetic recording / reproducing head for using a narrow recording medium such as a tape using the TMR according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Driving motor 2 ... Magnetic medium 3 ... Magnetic recording / reproducing head 4 ... Suspension 5 ... Arm 6 ... Voice coil motor (VCM) 7 ... Recording / reproducing channel 8 ... Control unit 25 ... Assembly incorporating a magnetic head 26 ... Magnetic Medium 27 ... Device 43 ... Magnetic head 42 ... Rotary drum 44 ... Tape-shaped magnetic recording medium 45 ... Tape supply reel 46 ... Rollers 47, 48, 49 ... Roller 50 ... Capstan 51 ... Capstan motor 52 ... Take-up reel 53 ... Base 54 ... Read / write element 55 ... Terminal 56 ... Protective film 57 ... Magnetic medium 58 ... Assembly 29 ... Composite ceramic base 30 ... Read / write element 32 ... Alumina protective film 31 ... Electrode 100 ... Ferromagnetic tunnel junction magnetoresistive film 200 ... magnetic recording / reproducing head 300 ... recording head 400 ... magnetic recording Raw device 11: first ferromagnetic layer 14: second ferromagnetic layer 13, 24 ... tunnel barrier layer 33, 41 ... magnetic reproducing head 34, 35 ... magnetic field applying film 36 ... magnetic shield electrode (S1, S2) 37: magnetic core (P2) 38: excitation coil

Claims (42)

[Claims] 1. A magnetic recording medium, the magnetic recording medium and a predetermined
Head for magnetic recording and playback
In the magnetic storage device composed of
The read head constituting the read head includes a first ferromagnetic layer
Between the first and second ferromagnetic layers and the first and second ferromagnetic layers.
Tunnel composed of a tunnel barrier layer
And a strong magnetic field
Tunneling magnetoresistive films are not affected by temperature changes.
And the resistance value of the film is 5 × 10 ^-FiveΩcm^TwoThe following one
A magnetic recording / reproducing device characterized by exhibiting a constant value.
Good. 2. The magnetic recording / reproducing head according to claim 1, wherein the temperature coefficient of the ferromagnetic tunnel junction magnetoresistance effect film is within ± 0.15% / ° C. 3. The magnetic recording / reproducing head according to claim 1, wherein a temperature coefficient of the ferromagnetic tunnel junction magnetoresistive film is within ± 0.04% / ° C. 4. The magnetic recording / reproducing head according to claim 1, wherein the thickness of the tunnel barrier layer is 5 nm or less. 5. The magnetic recording / reproducing head according to claim 1, wherein the thickness of the tunnel barrier layer is 2 nm or less. 6. The magnetic recording / reproducing apparatus according to claim 1, wherein the magnetic recording medium is a flexible magnetic recording medium in which a magnetic recording layer is formed on a substrate such as a synthetic resin. head. 7. The magnetic recording medium according to claim 1, wherein the magnetic recording medium is a hard magnetic recording medium in which a magnetic recording layer is formed on a hard substrate. Magnetic recording and reproducing head. 8. The magnetic recording apparatus according to claim 1, wherein the magnetic recording / reproducing head is allowed to operate in a state where a gap with the recording medium is 40 nm or less. Playhead. 9. A magnetic recording and reproducing head used in the magnetic storage device, wherein the magnetic reproducing head has a structure in which a tunnel barrier layer is interposed between the first ferromagnetic layer and the second ferromagnetic layer. 9. The magnetic recording / reproducing head according to claim 1, wherein a magnetic flux from a magnetic signal recorded on a magnetic medium is sensed by a ferromagnetic tunnel junction magnetoresistive film. 10. A magnetic recording / reproducing head used in the magnetic storage device, wherein the magnetic recording / reproducing head further records a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap of a magnetic core sandwiching an exciting coil. 10. The magnetic recording / reproducing head according to claim 1, wherein the magnetic recording / reproducing head includes a recording head. 11. The tunnel barrier layer according to claim 1, wherein a natural oxide film formed by oxygen exists on at least a surface of the conductive layer made of metal or metalloid. 3. The magnetic recording / reproducing head according to 1. 12. The magnetic recording / reproducing head according to claim 11, wherein the natural oxide film is formed by oxygen supplied under a vacuum state. 13. The metal or metalloid conductive layer constituting the tunnel barrier layer is a metal or metalloid layer formed by physical vapor deposition in a vacuum. The magnetic recording / reproducing head according to claim 11 or 12, wherein: 14. The tunnel barrier layer is formed by subjecting a metal or metalloid layer formed by physical vapor deposition in a vacuum to a natural oxidation treatment in the presence of oxygen in a vacuum. 14. The method according to claim 11, wherein
The magnetic recording / reproducing head according to any one of the above. 15. A tunnel barrier layer of the magnetic recording / reproducing head in which the metal or metalloid layer formed by physical vapor deposition in vacuum is naturally nitrided with nitrogen. 14. The magnetic recording / reproducing head according to claim 11, wherein the magnetic recording / reproducing head is formed. 16. The metal or metalloid layer constituting the tunnel barrier layer may be made of aluminum (A
16. The magnetic recording / reproducing head according to claim 1, wherein the magnetic recording / reproducing head is one selected from 1), Mg, and a lanthanoid. 17. The magnetic recording / reproducing head according to claim 1, wherein the magnetic recording medium has a disk shape and is used for a magnetic storage device. 18. The magnetic recording / reproducing head according to claim 1, wherein the magnetic recording medium is used in a magnetic storage device having a tape shape. 19. In the magnetic recording / reproducing head, two opposing first magnetic shields and a second magnetic shield laminated on a ceramic serving as a slider, and the two opposing first magnetic shields are provided. A read head using a read element using the ferromagnetic tunnel junction magnetoresistive film existing between the first and second magnetic shields, and one of the first and second magnetic shield films as a first magnetic shield. A coil sandwiched by an insulator and a second magnetic pole film are laminated on the first magnetic pole film on the opposite side of the first magnetic pole film from the magnetoresistive effect reproducing element. 19. A recording head for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap provided between the first and second magnetic poles. Magnetic recording / reproducing head as described . 20. The magnetic recording / reproducing head according to claim 1, wherein the magnetic recording layer constituting the recording medium is a magnetic thin film formed by a physical vapor deposition method. . 21. A magnetic storage device for performing information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head, wherein the magnetic recording / reproducing head includes a first ferromagnetic layer for generating a magnetoresistance effect and a second ferromagnetic layer. A read head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between layers, and an exciting coil And a recording head for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap of a sandwiched magnetic core. A magnetic memory device characterized in that the resistance of the junction magnetoresistive film is 5 × 10 ⁻⁵ Ωcm ² or less. 22. The magnetic memory device according to claim 21, wherein a temperature coefficient of the ferromagnetic tunnel junction magnetoresistive film is within ± 0.15% / ° C. 23. The magnetic memory device according to claim 21, wherein a temperature coefficient of the ferromagnetic tunnel junction magnetoresistive film is within ± 0.04% / ° C. 24. The tunnel barrier layer has a thickness of 5 nm.
24. The magnetic storage device according to claim 21, wherein: 25. The film thickness of the tunnel barrier layer is 2 nm.
24. The magnetic storage device according to claim 21, wherein: 26. The magnetic storage device according to claim 21, wherein the magnetic recording medium is a flexible magnetic recording medium in which a magnetic recording layer is formed on a substrate such as a synthetic resin. . 27. The magnetic recording medium according to claim 21, wherein said magnetic recording medium is a hard magnetic recording medium in which a magnetic recording layer is formed on a hard base.
The magnetic storage device according to any one of the above. 28. The magnetic storage device according to claim 21, wherein the magnetic recording / reproducing head is allowed to operate in a state where a gap with the recording medium is 40 nm or less. apparatus. 29. The tunnel barrier layer according to claim 21, wherein a natural oxide film formed by oxygen is present on at least a surface of the conductive layer made of metal or metalloid. 3. The magnetic storage device according to claim 1. 30. The magnetic memory device according to claim 29, wherein the natural oxide film is formed by oxygen supplied under a vacuum. 31. The conductive layer made of a metal or metalloid constituting the tunnel barrier layer is a layer made of a metal or metalloid formed by physical vapor deposition in a vacuum. 31. The magnetic storage device according to claim 29, wherein: 32. The tunnel barrier layer is formed by subjecting a metal or metalloid layer formed by physical vapor deposition in a vacuum to a natural oxidation treatment in the presence of oxygen in a vacuum. 32. The method according to claim 29, wherein
The magnetic storage device according to any one of the above. 33. A tunneling barrier layer of the magnetic read / write head of the magnetic read / write head, wherein a metal or metalloid layer formed by physical vapor deposition in a vacuum is naturally nitrided with nitrogen. The magnetic storage device according to any one of claims 21 to 28, wherein the magnetic storage device is formed by: 34. The metal or metalloid layer constituting the tunnel barrier layer is formed of aluminum (A
34. The magnetic storage device according to claim 21, wherein the magnetic storage device is one selected from l), Mg, and a lanthanoid. 35. The magnetic recording medium according to claim 21, wherein the magnetic recording medium has a disk shape.
35. The magnetic storage device according to any one of items 34 to 34. 36. The magnetic recording medium according to claim 21, wherein the magnetic recording medium is tape-shaped.
35. The magnetic storage device according to any one of items 34 to 34. 37. In the magnetic recording / reproducing head, two opposing first magnetic shields and a second magnetic shield laminated on a ceramic serving as a slider; and the two opposing first magnetic shields. A read head using a read element using the ferromagnetic tunnel junction magnetoresistive film existing between the first and second magnetic shields, and one of the first and second magnetic shield films as a first magnetic shield. A coil sandwiched by an insulator and a second magnetic pole film are stacked on the first magnetic pole film on the opposite side of the first magnetic pole film from the magnetoresistive effect reproducing element. 37. A recording head for recording a magnetic signal on a magnetic medium by a leakage magnetic flux generated from a magnetic gap provided between the first and second magnetic poles. A magnetic storage device according to claim 1. 38. The magnetic storage device according to claim 21, wherein the magnetic recording layer constituting the recording medium is a magnetic thin film formed by a physical vapor deposition method. 39. A magnetic recording / reproducing head used in a magnetic storage device for performing information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head, wherein the first ferromagnetic layer and the second ferromagnetic layer When manufacturing a read head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between the magnetic layers, After forming a layer made of a metal or metalloid in a tunnel barrier layer of a recording / reproducing head by physical vapor deposition in a vacuum, oxygen is introduced into the vacuum to spontaneously convert the layer made of the metal or metalloid. A method for manufacturing a magnetic recording / reproducing head, characterized by oxidizing. 40. A magnetic recording / reproducing head used in a magnetic storage device for performing information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head, wherein the first ferromagnetic layer and the second ferromagnetic layer When manufacturing a read head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a read element using a ferromagnetic tunnel junction magnetoresistive film having a structure in which a tunnel barrier layer is sandwiched between the magnetic layers, The tunnel barrier layer of the recording / reproducing head is formed of a metal or metalloid layer by physical vapor deposition in a vacuum, and then nitrogen is introduced into the vacuum to nitride the metal or metalloid layer. A method for manufacturing a magnetic recording / reproducing head. 41. When manufacturing a magnetic storage device for performing information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head, the magnetic recording / reproducing head is provided between the first ferromagnetic layer and the second ferromagnetic layer. A reproducing head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a reproducing element using a ferromagnetic tunnel junction magnetoresistive effect film having a structure sandwiching a tunnel barrier layer, and Forming a layer made of a metal or metalloid by a physical vapor deposition method in vacuum on the tunnel barrier layer of the magnetic recording / reproducing head, and then introducing oxygen into vacuum to form the layer made of the metal or metalloid. A method for manufacturing a magnetic storage device, wherein a layer is naturally oxidized. 42. When manufacturing a magnetic storage device for performing information recording / reproducing with a magnetic recording medium and a magnetic recording / reproducing head, the magnetic recording / reproducing head is provided between the first ferromagnetic layer and the second ferromagnetic layer. A read head that senses magnetic flux from a magnetic signal recorded on a magnetic medium by a read element using a ferromagnetic tunnel junction magnetoresistive effect film having a structure sandwiching a tunnel barrier layer, and The tunnel barrier layer of the magnetic recording / reproducing head is formed of a metal or metalloid by a physical vapor deposition method in vacuum, and then nitrogen is introduced into vacuum to form the metal or metalloid. A method for manufacturing a magnetic storage device, comprising nitriding a layer.