JPH08313726A - Active matrix liquid crystal display device and its production - Google Patents

Abstract

PURPOSE: To obtain a device at high production yield in a smaller number of processes although a color filter and the like is formed on a substrate where thin film transistors are formed. CONSTITUTION: Conductive color resists 206-208 are applied as a color filter and these color resists 206-208 are used as the pixel electrodes of a liquid crystal display device. Or the color resist may be used as a mask to form a black matrix by LPD method. Or a conductive layer may be formed to connect the conductive color resists 206-208 and a drain area 209. The conductive layer is preferably made of the same material as the source line and preferably formed in the peripheral part of the color resists 206-208. A conductive color layer may be formed on the upper part of the pixel electrode to obtain a reflection type liquid crystal display device. Or the color resist is formed on the upper part of the pixel electrode so that the color resist is used to pattern the pixel electrode. Further, the resist for patterning of pixel electrode may be used to form an insulating film 220 as a protective film by LPD method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device using thin film transistors and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a thin film transistor side substrate,
An active matrix liquid crystal display device (liquid crystal panel) having a structure in which a counter substrate and a TN (twisted nematic) liquid crystal or a ferroelectric liquid crystal as an electro-optical modulation material are sandwiched between these substrates is known. In this liquid crystal display device, a thin film transistor (TFT) and a pixel electrode selectively driven by the thin film transistor (TFT) are provided on a thin film transistor side substrate, and an opposite electrode is provided on an opposite substrate. In order to realize color display in such a liquid crystal display device, it is necessary to arrange a transmissive color filter having red (R), green (G), and blue (B) colors for each display pixel.

An example of a conventional liquid crystal display device having such a color filter is shown in FIG. 1 (note that in the drawings shown below, the size of the thin film transistor is not shown in order to clearly show the structure of the thin film transistor. Larger than that of). The liquid crystal 103 is provided between the thin film transistor side substrate 101 and the counter substrate 102 provided to face each other.
Is enclosed. On the counter substrate 102, a black matrix 104 made of a light-shielding film such as chromium, and red / green / red / green / blue-dyed gelatin
Blue color filter portions 105, 106 and 107 are formed. A counter electrode 109 made of a protective insulating film 108 and a transparent conductive film is formed on this. On the other hand, the thin film transistor side substrate 101 is provided therein with a thin film transistor 110 and a pixel electrode 111 made of a transparent conductive film which is selectively driven by the thin film transistor 110. Pixel electrode 111
Alignment films 112 and 113 are stacked on the counter electrode 109 and are rubbed. The source electrode 11
An insulating film 116 serving as a protective film is formed on the film 5,
At the upper part of the pixel electrode 111, this insulating film is removed and a window is opened. Thereby, the source electrode 11
5 can be protected, and the situation in which the voltage applied to the liquid crystal is reduced by the presence of this insulating film can be prevented.

[0004]

However, the above-mentioned conventional example has the following problems.

That is, in the above conventional example, a color filter,
The black matrix is provided not on the thin film transistor side substrate but on the counter substrate. For this reason, a step of forming a color filter or the like is required for manufacturing the counter substrate, and there is a problem that the cost of the counter substrate becomes very high. Further, when the thin film transistor side substrate and the counter substrate are bonded together, it is difficult to accurately align the pixel electrode formed on the thin film transistor side substrate, the color filter formed on the counter substrate, and the black matrix with each other. there were.

For example, Japanese Unexamined Patent Publication No. 2-207222 discloses a method of forming a light-shielding layer to be a black matrix on a thin film transistor side substrate. Further, JP-A-4-253028 and JP-A-6-242.
Japanese Patent No. 433 discloses a method of forming a color filter or the like on the thin film transistor side substrate. According to these methods, since the color filter and the black matrix can be provided on the thin film transistor side substrate, it is possible to solve the problem of high cost of the counter substrate and the problem of alignment accuracy. However, these methods require a new step of forming a color filter or the like on the thin film transistor side substrate, and the addition of this new step has a problem that the manufacturing yield of the liquid crystal display device is reduced.

Further, in the conventional reflection type liquid crystal display device, there is no known one in which a color filter is built in the thin film transistor side substrate. Also, in the reflective liquid crystal display device,
Since there is no backlight, improvement of aperture ratio is a major technical issue.

Further, as shown in FIG. 1, in the conventional example,
After forming the insulating film 116 serving as a protective film, the pixel electrode 11
There is also a problem that a step of removing the insulating film on the upper part of 1 is required.

The present invention has been made in order to solve the above-mentioned technical problems, and its purpose is to:
An object of the present invention is to provide an active matrix type liquid crystal display device and a manufacturing method thereof, which can reduce the number of steps and have a high manufacturing yield while forming a color filter or the like on a thin film transistor side substrate.

[0010]

In order to solve the above problems, the invention of claim 1 provides a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and the thin film transistor side substrate and the counter substrate. An active matrix type liquid crystal display device including a sandwiched liquid crystal element, wherein a conductive colored layer is provided on the thin film transistor side substrate as a color filter for color display, and the conductive colored layer is the thin film transistor. Is also used as a pixel electrode selectively driven by.

According to a twenty-eighth aspect of the present invention, an active matrix type liquid crystal display including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A method of manufacturing a device, comprising: forming a contact hole for contacting a drain region of the thin film transistor; and forming a color filter for color display, the color filter being connected to the drain region through the contact hole. Forming a conductive colored layer on the thin film transistor side substrate.

According to the invention of claim 1 or 28, a conductive colored layer serving as a color filter is provided on the thin film transistor side substrate. This eliminates the need to form a color filter on the counter substrate, and eliminates the need to align the counter substrate and the thin film transistor side substrate. Further, according to the present invention, this conductive colored layer also serves as the pixel electrode. Therefore, the step of forming a pixel electrode material such as ITO and the step of patterning this pixel electrode material can be omitted. Further, in the structure in which the color filter is formed on the pixel electrode material, there are problems that the effective voltage applied to the liquid crystal is reduced and that there is a need for a margin for alignment between the pixel electrode and the color filter. Then, this problem can be effectively prevented.

The invention of claim 2 is characterized in that in claim 1, the conductive colored layer is formed by dyeing a dyeing medium in which a conductive substance is dispersed.

According to the second aspect of the present invention, the conductive coloring layer is formed by dyeing a dyeing medium such as gelatin in which a conductive substance is dispersed with a predetermined dyeing solution. According to the present invention,
Since the colored layer is formed by the dyeing method, the color purity (color characteristics) can be improved as compared with the method of dispersing the pigment or the like.

The invention of claim 3 is characterized in that in claim 1, the conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in the resist. .

According to the third aspect of the invention, the color filter is formed by the conductive color resist. This makes it possible to employ a method of selectively forming an insulating film by the LPD method using the conductive color resist as a mask.

The invention of claim 4 is characterized in that, in claim 3, the ratio of the solid component containing the dye and the conductive substance in the color resist is 30% or less.

According to the invention of claim 4, secondary aggregation of the solid component contained in the conductive color resist is prevented, and the pot life is improved.

According to a fifth aspect of the present invention, in any one of the third or fourth aspects, the invention includes a black matrix formed of an insulating film formed in a region where the pattern of the color resist is not formed, and the black matrix. The insulating film of the matrix is formed by adding a light-shielding dye to a saturated aqueous solution of a compound containing at least one substance forming an insulating substance, and making the saturated aqueous solution supersaturated to precipitate the insulating substance. It is characterized by being

According to a twenty-ninth aspect of the present invention, the conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in the resist, and a pattern of the color resist is formed. For areas that are not
An insulating film to be a black matrix is formed by a film forming method in which a saturated aqueous solution of a compound containing at least one substance forming an insulating material is mixed with a light-shielding dye to bring the saturated aqueous solution into a supersaturated state to deposit the insulating material. It is characterized by including a process.

According to the invention of claim 5 or 29, the black matrix can be formed by a method utilizing the LPD method. Therefore, an insulating film that becomes a black matrix can be formed at a low temperature of about room temperature, an insulating film containing a dye can be easily formed, and an inorganic insulating film having higher heat resistance and chemical resistance than gelatin and the like. Can be obtained. Further, since the present invention uses the LPD method, it is possible to selectively form an insulating film which becomes a black matrix with respect to the pattern of the conductive color resist. As a result, the step of etching the insulating film can be omitted, and the black matrix can be accurately formed in self-alignment with the color resist. Further, according to the present invention, since the black matrix is formed of the insulating film to which the dye is added, problems such as glare and cracks can be solved. Further, according to the present invention, it is possible to prevent the problem of the conventional example in which the wiring layer or the like is a black matrix, that is, the problem caused by the parasitic capacitance between the pixel electrode and the gate line.

According to a sixth aspect of the present invention, in the fifth aspect, the insulating film is formed of a silicon oxide film.

According to the invention of claim 6, the insulating film which becomes the black matrix can be formed of a silicon oxide film which is compatible with the manufacturing process of the thin film transistor. This makes it easy to select the chemicals used in the manufacturing process. Further, even when the insulating film and the black matrix in the thin film transistor have a multi-layered structure, since they are formed of the same material, the adverse effect of strain caused by stress or the like can be reduced.

According to a seventh aspect of the present invention, in any one of the first to sixth aspects, the drain region and the conductive colored layer are in contact with each other between the drain region of the thin film transistor and the conductive colored layer. It is characterized by interposing a conductive layer for the purpose.

According to the invention of claim 30, in any one of claims 28 or 29, a drain region of the thin film transistor is formed between the step of forming the contact hole and the step of forming the conductive colored layer. The method may further include the step of forming a conductive layer for contacting the conductive colored layer.

According to the invention of claim 7 or 30, a good contact can be made between the conductive colored layer which becomes the pixel electrode and the drain region of the thin film transistor, and the contact resistance can be reduced. . This can increase the effective voltage applied to the liquid crystal element.

The invention of claim 8 is characterized in that in claim 7, the conductive layer is formed of the same material as a source line connected to a source region of the thin film transistor.

According to the invention of claim 8, since the conductive layer is formed of the same material as the source line, it is not necessary to add a new photo and etching step to form the conductive layer.

According to a ninth aspect of the present invention, in any one of the seventh or eighth aspects, the conductive layer is formed in a peripheral portion of the pixel electrode.

According to the invention of claim 9, the parasitic resistance between the drain region of the thin film transistor and each part of the pixel electrode can be reduced.

The invention of claim 10 relates to claims 7 to 9.
In any one of the above, the conductive layer is a part of a black matrix serving as a light shielding layer.

According to the tenth aspect of the invention, the conductive layer provided in the peripheral portion can be effectively used as a black matrix.

According to the invention of claim 11, a reflection type active matrix including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. Type liquid crystal display device, a conductive colored layer is provided on the thin film transistor side substrate as a color filter for color display, and a pixel electrode selectively driven by the thin film transistor is provided below the colored layer. The pixel electrode is made of a non-translucent material.

According to a thirty-first aspect of the invention, there is provided a reflective active matrix including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A method for manufacturing a liquid crystal display device, comprising: forming a pixel electrode made of a non-translucent material that is selectively driven by the thin film transistor; and forming a conductive colored layer that serves as a color filter for color display. And a step of forming on the pixel electrode.

According to the eleventh or thirty-first aspect of the invention, a reflective filter is formed by forming a color filter formed of a conductive colored layer on the pixel electrode formed of a non-translucent (light-reflecting) material. An active matrix liquid crystal display device can be realized. According to the present invention, since the color filter is formed on the thin film transistor side substrate, the aperture ratio can be improved. Further, since the color filter has conductivity, it is possible to prevent the problem of voltage division caused by the color filter being interposed between the pixel electrode and the liquid crystal element.

According to a twelfth aspect of the present invention, in the eleventh aspect, the pixel electrode is formed of the same material as a source line connected to the source region of the thin film transistor.

According to the twelfth aspect of the invention, since the pixel electrode and the source line can be formed in the same step, the steps can be simplified and the cost can be reduced.

The invention of claim 13 is the same as claim 11 or 12
In the above, the liquid crystal element is a polymer-dispersed liquid crystal element.

According to the thirteenth aspect of the present invention, by using the polymer-dispersed liquid crystal element, it is possible to eliminate the need for a polarizing plate and the like, and it is possible to provide a good reflective liquid crystal display device.

According to a seventeenth aspect of the present invention, an active matrix type liquid crystal display including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. In the device, a color resist as a color filter for color display is provided on the thin film transistor side substrate, and a pixel electrode selectively driven by the thin film transistor is provided below the color resist, and the pixel electrode is It is characterized in that it is patterned using a color resist as a mask.

According to a thirty-second aspect of the present invention, an active matrix liquid crystal display including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A method of manufacturing a device, comprising: forming a pixel electrode material that is a material of a pixel electrode that is selectively driven by the thin film transistor; and forming a color resist that serves as a color filter for color display on the pixel electrode material. And a step of patterning the pixel electrode material using the color resist as a mask.

According to the invention of claim 17 or 32, the pixel electrode made of ITO or the like is arranged under the color resist. Therefore, even if the color resist has a high resistance, it is possible to effectively prevent the reduction of the effective voltage applied to the liquid crystal due to the high resistance. Further, according to the present invention, since the patterning of the pixel electrode material is performed using the color resist as a mask, the step of forming the resist for patterning the pixel electrode can be omitted.

According to an eighteenth aspect of the present invention, in the seventeenth aspect, the invention includes a black matrix formed by an insulating film formed in a region where the pattern of the color resist is not formed, and the insulating film of the black matrix. Is formed by adding a light-shielding dye to a saturated aqueous solution of a compound containing at least one substance that constitutes an insulating substance, bringing the saturated aqueous solution into a supersaturated state, and precipitating the insulating substance. To do.

According to a thirty-third aspect of the present invention, in the thirty-second aspect, a region of the color resist in which the pattern is not formed is shielded with a saturated aqueous solution of a compound containing at least one substance constituting an insulating substance. The method is characterized by including a step of forming an insulating film which becomes a black matrix by a film forming method in which the saturated aqueous solution is supersaturated with a dye and the insulating material is deposited.

According to the eighteenth or thirty-third aspect of the invention, the black matrix is formed by the method utilizing the LPD method. Therefore, it is possible to form an insulating film to be a black matrix at a low temperature and selectively form an insulating film with respect to a color resist.

The invention of claim 22 is the same as claims 1 to 1.
In any one of 6 and 20 and 21, the specific resistance of the conductive colored layer is 1 × 10 ⁷ Ω · cm or less.

According to the twenty-second aspect of the present invention, a good liquid crystal driving operation can be performed on a liquid crystal panel having a relatively small scale and loose specifications.

The invention of claim 23 is based on claim 1 to claim 1.
In any one of 6 and 20 and 21, the specific resistance of the conductive colored layer is 1 × 10 ⁶ Ω · cm or less.

According to the twenty-third aspect of the present invention, a good liquid crystal driving operation can be performed even for a large-scale liquid crystal panel having tight specifications.

Further, the invention of claim 24 is based on claims 1 to 1.
6 and 20 to 23, the conductive colored layer is formed by dispersing conductive fine particles having a dish shape in the colored layer.

The invention of claim 25 is based on any one of claims 1 to 1.
6 and 20 to 23, the conductive colored layer is formed by dispersing conductive fine particles having a rod-like shape in the colored layer.

According to the twenty-fourth and twenty-fifth aspects of the present invention, the overlap area between the conductive fine particles in the colored layer can be increased, and the specific resistance of the conductive colored layer can be lowered.

Further, the invention of claim 26 is based on claims 1 to 1.
6 and 20 to 25, the conductive colored layer is formed by dispersing conductive fine particles that have been subjected to a hydrophobic treatment with a coupling agent to the colored layer.

According to the twenty-sixth aspect of the present invention, it is possible to prevent secondary aggregation of the hydrophilic conductive fine particles and the like, and to obtain a uniform dispersed state.

According to a twenty-seventh aspect of the invention, an active matrix type liquid crystal display including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. In the device, a pixel electrode selectively driven by the thin film transistor, a resist provided on the pixel electrode and used for patterning the pixel electrode, and an insulating film formed in a region where the resist pattern is not formed. A film, and the insulating film is formed by causing a saturated aqueous solution of a compound containing at least one substance forming an insulating substance to be in a supersaturated state to precipitate the insulating substance.

According to a thirty-fourth aspect of the present invention, an active matrix type liquid crystal display including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A method of manufacturing a device, comprising a step of forming a pixel electrode material which is a material of a pixel electrode selectively driven by the thin film transistor, and a step of forming a pixel electrode patterning resist on the pixel electrode material.
Patterning the pixel electrode material using the color resist as a mask; and a saturated aqueous solution of a compound containing at least one substance forming an insulating material in a supersaturated state with respect to a region where the resist pattern is not formed. And a step of forming an insulating film to be a protective film by a film forming method of depositing the insulating material.

According to the twenty-seventh or thirty-fourth aspect of the present invention, the resist for patterning the pixel electrode material can be used to form the insulating film serving as the protective film by the LPD method. As a result, the step of removing the insulating film above the pixel electrode, which is required in the conventional example, can be omitted. Further, since the present invention uses the LPD method, it is possible to form an insulating film serving as a protective film at a low temperature, selectively form an insulating film with respect to a resist, and the like.

[0058]

Embodiments of the present invention will be described in detail below with reference to the drawings.

1. First Example The first example is an example in which a conductive colored layer as a color filter is provided on a thin film transistor side substrate, and this conductive colored layer is also used as a pixel electrode. FIG. 2 (A)-
An example of a process sectional view of the first embodiment is shown in FIG. A thin film transistor 202 is formed inside the thin film transistor side substrate 201. The thin film transistor 202 includes a gate line 203, a source line 204,
It is composed of an insulating film 205 and the like (FIG. 2A).

Next, a contact hole is opened, and after that, a pattern of a red color resist 206, a green color resist 207, and a blue color resist 208 is sequentially formed (FIG. 2B). As such a color resist, for example, a pigment dispersion type resist formed by dispersing a pigment in the resist can be used.

In this embodiment, the color resists 206 to 208, which are color filters, have a conductive property. The conductive color resist is, for example, ITO (indium oxide) or SnO ₂ (tin oxide) which is a material of the transparent conductive film.
It can be formed by mixing fine particles such as the above with a color resist. Then, in this way, the color resist 20
By giving 6 to 208 conductivity, these color resists can be used as a color filter provided on the thin film transistor side substrate and also as a pixel electrode for driving a liquid crystal element. Therefore, these conductive color resists 206 to 208 and the drain region 209 of the thin film transistor 202 are connected via the contact hole.

After the conductive color resists 206 to 208 which also serve as color filters and pixel electrodes are formed in this way, an insulating film 220 serving as a protective film for the source line 204 is formed if necessary. Next, preferably, the insulating film formed on the color resist is removed. This is because if there is an insulating film above the color resist, the effective voltage applied to the liquid crystal decreases and the image quality deteriorates. Then, the alignment film 22
2 are laminated and subjected to a rubbing treatment. On the other hand, the counter substrate 217 has a structure in which a counter electrode 218 made of a transparent conductive film and an alignment film 221 are only provided inside the counter substrate 217.
A liquid crystal 219 is sealed between the thin film transistor side substrate 201 and the counter substrate 217 (FIG. 2C).

The black matrix serving as the light shielding layer may be formed on the counter substrate 217, or part or all of the gate line 203, the source line 204, etc. may be used as the black matrix. Alternatively, the black matrix may be formed on the thin film transistor side substrate by using some method.

According to this embodiment, a color filter made of a conductive color resist is provided on the thin film transistor side substrate. Accordingly, it is not necessary to form a color filter on the counter substrate, and the manufacturing cost of the counter substrate can be reduced. Further, it is possible to solve the problem of margin of accuracy in bonding the thin film transistor side substrate and the counter substrate.

Further, according to this embodiment, since the conductive color resist serving as the color filter also serves as the pixel electrode, the step of forming ITO serving as the pixel electrode and the step of patterning ITO can be omitted. This can reduce the cost and improve the yield. Also, for example, IT
This embodiment has the following advantages as compared with the structure in which a color filter made of a color resist or the like is formed on the pixel electrode made of O. That is, in the structure in which the color filter is formed above the pixel electrode, the voltage for driving the liquid crystal is applied to the color filter, and the voltage (effective voltage) applied to the liquid crystal element is reduced due to the voltage division. Cause of. On the other hand, in this embodiment, since the conductive color resists 206 to 208 also serve as pixel electrodes and color filters, it is possible to effectively prevent such a problem of image quality deterioration. Further, according to the present embodiment, the aperture ratio can be increased as compared with the configuration in which the color filter is formed on the pixel electrode. That is, according to the structure in which the color filter is formed above the pixel electrode, a margin for alignment between the pixel electrode and the color filter is required. However, according to the present embodiment, the aperture ratio is increased by the amount not required for such a margin. be able to.

(1) Conductive Colored Layer The conductive colored layer may be formed by dispersing a dye such as a pigment and a conductive substance such as ITO in a resist as in the above embodiment. Besides, for example, it can be formed by dyeing a dyeing medium such as gelatin (polymer material) in which a conductive substance is dispersed, or by mixing a conductive substance into printing ink or the like.

When the dye and the conductive substance are dispersed in the resist, it is necessary to keep the ratio of the solid components such as the dye and the conductive substance below a certain value. This is because if the proportion of the solid component in the resist liquid is high, the pot life (time for which the usable liquid state is maintained) becomes short. That is, the dye,
Solid components such as conductive substances aggregate, making it impossible to use the resist solution, which hinders production in factories and the like. FIG. 13 shows an example of the relationship between the solid component ratio and the pot life. For example, in order to make the pot life three months or more, the solid component ratio needs to be about 30% or less,
In order to make it 6 months or more, it is necessary to make it about 25% or less. Therefore, in order to make the pot life more reasonable, the solid component ratio is preferably about 30% or less, more preferably about 25% or less. In order to reduce the solid component ratio, it is sufficient to reduce the amount of conductive substance or the like contained in the resist, but if it is too small, the specific resistance of the conductive colored layer increases. Therefore, in consideration of the relationship between the pot life and the specific resistance, the solid component ratio needs to be the most balanced.

When a pigment or the like is dispersed in the resist,
Although not particularly limited, examples of red pigments include perylene pigments, anthraquinone pigments, dianthraquinone pigments, azo pigments, diazo pigments, quinacridone pigments, and anthracene pigments. Examples of green pigments include halogenated phthalocyanine pigments. The blue pigments include metal phthalocyanine pigments, indanthrone pigments,
Examples include indophenol-based pigments. In addition to these, it is also possible to use violet, yellow, cyanine and magenta pigments in combination. Further, the color resist of this embodiment may be not only a negative type but also a positive type, and examples of the negative type resist include solvents (ethyl-3-ethoxypropionate, methoxypropylacetate, cyclohexane, 3-methoxybutylacetate, etc.). And a resin (methacrylic resin or the like) and a monomer (multi-sensitive acrylic monomer or the like).

The method of forming a conductive colored layer by dyeing a dyeing medium in which a conductive material is dispersed has the advantage that the color purity of the conductive colored layer can be increased as compared with the method of dispersing a pigment or the like in a resist. is there. That is, when a pigment or the like is used, the more the pigment or the like is dispersed, the lower the transmittance becomes. In order to compensate for this decrease in transmittance, it is necessary to widen the wavelength range of transmitted light. For example, in order to express a green color, a yellow pigment or the like is mixed. Therefore, the color purity (color characteristics) is deteriorated. On the other hand, according to the method of forming a colored layer by dyeing gelatin or the like, the above problem does not occur, and as a result, the color purity can be further improved.

As the dyeing medium (chromosomes), in addition to gelatin, casein, fish glue, polyvinyl alcohol, polyvinylpyrovidone, polyvinyl alcohol, polyimide, polyamide, polyurea, polyurethane, polycinnamic acid, acrylic resin and their derivatives Etc. can be used. Acid dyes, reactive dyes, etc. can be used as the dyeing solution, and Kayanol Milling Red RS (manufactured by Nippon Kayaku) + acetic acid + water as the red dyeing solution,
Brilliant India Blue (made by Hoechst) + Suminol Yellow MR (made by Sumitomo Chemical) + acetic acid + water as a green dye, and Kayanol Sayanin 6B as a blue dye
(Nippon Kayaku) + acetic acid + water can be used. However, the dye solution is not limited to these. There are various methods for forming a colored layer (color filter) by a dyeing method. Generally, for example, a dyeing medium is patterned by exposure and development, and then immersed in a red dyeing solution to form a red colored layer. The same applies to the blue and green colored layers.

(2) Conductivity The conductive colored layer in this embodiment also has a predetermined impedance component (specific resistance and capacitance component). Therefore, there is not a little problem that the effective voltage applied to the liquid crystal is lowered due to the conductive colored layer interposed between the drain region and the liquid crystal. Therefore, it is desirable that the specific resistance of the conductive colored layer is as small as possible. For example, FIG.
(C) is a ratio of a liquid crystal panel that is considered to have the most severe specifications, that is, a liquid crystal panel having a diagonal length of 30 cm (about 12 inches) and an XGA (for example, 1024 × RGB × 768 pixels and a dot clock of about 65 MHz). The relationship between the resistance and the effective value (simulation result) is shown. FIGS. 14A, 14B, and 14C respectively show the specific resistance and the effective value of the pixel at the position closest to the driver circuit for driving the panel, the pixel at the center position, and the pixel at the farthest position. It is the relationship with the value difference. Here, the "difference in effective value" means the effective voltage value applied to the liquid crystal element when the conductive colored layer does not exist and the effective voltage value applied to the liquid crystal element when the conductive colored layer exists. Is the difference. As shown in FIGS. 14A to 14C, the specific resistance is 1
The difference in effective value becomes large at about 10 ⁶ Ω · cm or less, and the display characteristics deteriorate. As is clear from the figure, the degree of deterioration in display characteristics is greater in the case of black display than in the case of gray display / white display. As described above, in order to normally perform the liquid crystal driving operation in the liquid crystal panel whose specifications are considered to be the strictest, the specific resistance is 1 × 10 ⁶ Ω · c.
It is desirable that it is about m or less.

However, the specific resistance is 1 depending on the panel.
There are cases where normal operation is possible even if it is larger than × 10 ⁶ Ω · cm. For example, in FIGS. 15A and 15B, a liquid crystal panel whose specifications are considered to be relatively loose, that is, the diagonal length is 15 cm. VGA (about 6 inches) (eg 640 x R)
GB × 480 pixels with a dot clock of 25.2 MH
The relationship between the specific resistance and the difference in effective value in the liquid crystal panel (about z) is shown. FIGS. 15A and 15B show the relationship between the specific resistance and the difference between the effective values of the pixel at the center position and the pixel at the farthest position from the driver circuit that drives the panel. As is clear from this figure, in order to normally perform the liquid crystal driving operation in this liquid crystal panel, the specific resistance may be about 1 × 10 ⁷ Ω · cm or less.

From the above, the specific resistance of the conductive colored layer depends on the size of the liquid crystal panel, the desired display characteristics, etc.
It is desirable that it is approximately 10 ⁷ Ω · cm or less, and 1 ×
More preferably, it is about 10 ⁶ Ω · cm or less.

(3) Shape of Conductive Fine Particles etc. The conductive substance contained in the colored layer is preferably in the form of fine particles. This is to minimize the decrease in the transmittance of the color resist due to the inclusion of the conductive substance. For the same reason, it is desirable that the conductive material to be dispersed has transparency. Therefore, ITO (indium oxide), SnO ₂ (tin oxide) or the like is most suitable as the conductive material. Alternatively, a mixed material of these, carbon, gold, and silver can be used.

When the conductive substance is made into fine particles, it is desirable that the shape of the fine particles is dish-like or rod-like rather than spherical. The reason for this is that if it is dish-shaped or rod-shaped, the overlap area between adjacent fine particles can be increased, and as a result, the current can be made easier to flow and the specific resistance can be lowered. That is, in order to reduce the specific resistance, the proportion of the conductive fine particles to be dispersed may be increased. However, if it is too high, the transmittance may decrease, the color characteristics may deteriorate, and the above-mentioned problems such as pot life may occur. If the overlap area between adjacent fine particles such as a dish or a bar is increased, the specific resistance can be lowered without increasing the ratio of the conductive fine particles.

Further, in order to realize a uniform dispersed state of the conductive substance, it is desirable to subject the conductive fine particles to a hydrophobic treatment to make their surfaces hydrophobic. That is, when the conductive fine particles have a hydrophilic surface, many dyes such as pigments have a hydrophobic surface, so that secondary aggregation of the hydrophilic conductive fine particles occurs and a uniform dispersion state is obtained. This is because there is a possibility that there will be no. The hydrophobic treatment can be realized by using, for example, a coupling agent, and various coupling agents such as silane type, titanate type, and chromium type can be used.

2. Second Example The second example shows an example of a method of incorporating a black matrix into the thin film transistor side substrate in the first example. The difference from the first embodiment is that in FIG. 3C, the black matrix 310 is formed by using the LPD method. The LPD method has a feature that a silicon oxide film is not deposited on the resist pattern. By using this property, the silicon oxide film can be selectively formed with respect to the pattern of the conductive color resist. Therefore, after forming the conductive color resists 306 to 308 in FIG. 3B, the conductive color resists 306 to 30 are formed by using the LPD method in FIG. 3C.
A black oxide-added silicon oxide film is formed selectively with respect to the pattern of No. 8, and this silicon oxide film is used as a black matrix 310. As a result, the black matrix 310 can be incorporated in the thin film transistor side substrate by a simple method.

Next, details of the LPD method will be described by taking the case of forming a silicon oxide film as an example. In the LPD method, silica is dissolved in hydrosilicofluoric acid (H ₂ SiF ₆ ) to form a saturated aqueous solution, and the substrate is immersed in this. Then, aluminum, aluminum chloride, boron, boric acid, etc. are added to create a supersaturated state, and a silicon oxide film is deposited and grown on the substrate surface.

[0079]

Embedded image

[0080]

Embedded image

For example, in the above chemical formulas (1) and (2), by adding boric acid (H ₃ BO ₃ ) as an additive, the chemical reaction of the chemical formula (2) proceeds to the right, and hydrofluoric acid is added. (HF) is consumed. As a result, the chemical reaction of the chemical formula (1) proceeds to the right, and the silicon oxide film (SiO ₂ )
Is deposited. As described above, in the LPD method, at least one substance forming the insulating substance, such as silicon (Si), is used.
A saturated aqueous solution of a compound containing is prepared. Then, this saturated aqueous solution is made into a supersaturated state by adding an additive, for example, and an insulating material is deposited to form an insulating film.
At this time, in this embodiment, the saturated aqueous solution contains a pigment such as black, and thus an insulating film having the pigment such as black added therein, that is, a black matrix can be obtained.

The chemical formulas when aluminum is used as an additive are shown below.

[0083]

Embedded image

[0084]

[Chemical 4]

In the above formula, aluminum (A
By adding 1), the chemical reaction of the chemical formula (4) proceeds to the right, and hydrofluoric acid (HF) is consumed. As a result, the chemical reaction of the chemical formula (3) proceeds to the right, and the silicon oxide film (SiO ₂ ) is deposited.

As described above, in this embodiment, since the insulating film serving as the black matrix is formed by the method utilizing the LPD method, the insulating film can be formed at a low temperature of about room temperature. If the insulating film can be formed at a low temperature, damage to the glass substrate during the formation of the insulating film can be reduced, so that an inexpensive glass substrate can be adopted and the product cost can be kept low. In addition, it is possible to prevent the device characteristics of the thin film transistor from being deteriorated due to the heating temperature when forming the black matrix.

Further, in this embodiment, since the LPD method is used, it becomes possible to easily form the insulating film having the dye added therein. For example, when forming an insulating film, it is common to use a chemical vapor deposition method (CVD method). However, pigments and other dyes are usually solids, and C
Depending on the VD method, it is not easy to add the solid dye to the insulating film. On the other hand, when the LPD method is used, an insulating film having a dye added therein can be easily obtained only by dissolving the solid dye in a saturated aqueous solution. A major feature of this example is that the formation of a black matrix, which requires coloring, was performed by using the LPD method in which a dye can be easily added.

Since the insulating film of this embodiment formed by using the LPD method is an inorganic insulating film, it is possible to obtain an insulating film having higher heat resistance and chemical resistance than gelatin and resist. .

In addition, since the LPD method is used in this embodiment, the insulating film can be selectively formed with respect to the conductive color resist pattern. That is, LPD
The method is characterized in that the insulating material is not deposited on the resist. This is because the surface of the resist has water repellency. When this feature is used, the etching step at the time of pattern formation is unnecessary, and the cost of the product can be reduced. Moreover, since the black matrix can be formed in self-alignment with the color resist, the black matrix can be formed with high accuracy, and the aperture ratio can be improved.

The black matrix in this embodiment is a stripe type, a mosaic type, a triangle type, or a 4 type.
It is arranged between the color filters arranged in a pixel arrangement type pattern or the like to serve as a light shielding layer. In the past, this black matrix was formed by a light-shielding film made of chromium or the like. Therefore, there have been problems such as cracks due to stress and glare due to reflection of chromium or the like. On the other hand, in the present embodiment, since the black matrix is formed of the insulating film to which the dye is added, it is possible to solve the problems such as cracks and glare.

Further, according to this embodiment, since the problem that occurs in the conventional example in which the wiring layer or the like is the black matrix, that is, the problem of the parasitic capacitance between the pixel electrode and the gate line does not occur, the deterioration of the image quality is prevented. it can.

Further, in this embodiment, the insulating film forming the black matrix is preferably a silicon oxide film. Silicon oxide film is used for thin film transistor, LSI
This is because it is generally used as an insulating film in a manufacturing process such as, and has excellent heat resistance and chemical resistance. That is, as compared with the material used for the conventional black matrix, the compatibility with the manufacturing process of the thin film transistor and the like is better. Especially, when the black matrix is formed on the thin film transistor side substrate, this compatibility becomes a problem. This is because in this case, the black matrix is also formed by the same manufacturing process as the thin film transistor. Therefore, if a silicon oxide film or the like which is generally used in the manufacture of thin film transistors is used as the material of the black matrix, it is not necessary to consider the etching solution, the temperature, etc. used after the step of forming the black matrix so much. This facilitates selection of chemicals and the like used in the manufacturing process. Further, even when the insulating film and the black matrix in the thin film transistor have a multi-layered structure, since they are formed of the same material, the adverse effect of strain caused by stress or the like can be reduced. Further, the silicon oxide film forming the black matrix can also be used as an insulating film (protection film for the source line) of the thin film transistor.

In this embodiment, not only a silicon oxide film but also a film made of a material equivalent to this silicon oxide film, a titanium oxide film, etc. can be adopted, and the process compatibility with the manufacturing of thin film transistors etc. is good. For example, various types can be adopted.

When the insulating film is a silicon oxide film, a silicon oxide film is formed by adding an additive made of aluminum or an aluminum compound or an additive made of boron or a boron compound to hydrosilicofluoric acid. It is desirable to do. The elements forming the additive used by the LPD method remain in the insulating film as impurities.
Therefore, it is desired that the remaining elements do not adversely affect, for example, thin film transistors. Aluminum and the like are commonly used in processes such as thin film transistors. In addition, the insulating film containing boron or the like is
It is used as an insulating film called BPSG in the LSI process. Therefore, it is considered that even if these elements remain in the insulating film, the adverse effect on the thin film transistor and the like is small.

Further, in the present embodiment, a pigment is desirable as the pigment contained in the insulating film. This is because the pigment has relatively high heat resistance, and therefore, when the heat resistance of a color filter or the like is increased, it is desirable to increase the heat resistance of the dye accordingly. However, the dye contained in the insulating film is not limited to this, and a dye or the like may be used, for example. As the black pigment contained in the insulating film in this embodiment, carbon-based pigments and the like can be considered. A water-soluble pigment is preferable as the pigment used in the LPD method.

3. Third Embodiment The third embodiment is an embodiment in which a conductive layer such as a metal is interposed between the conductive colored layer (color resist) and the drain region of the thin film transistor. 4A to 4D show an example of process sectional views of the third embodiment. The difference from the first embodiment is that in FIG. 4B, after forming a contact hole, a conductive layer 411 for making contact between the drain region 409 and the pixel electrode is formed. The conductive layer 411 is made of metal or the like. Then, after forming the conductive layer 411, conductive color resists 406 to 408 which also serve as color filters and pixel electrodes are formed as illustrated in FIG.

According to this embodiment, good contact can be made between the conductive color resists 406 to 408 which will be the pixel electrodes and the drain region 409, and the contact resistance can be reduced. As a result, the effective voltage applied to the liquid crystal element can be increased and the display characteristics can be improved. In this case, it is desirable that the material of the conductive layer 411 be one that can sufficiently reduce the contact resistance with the drain region and the contact resistance with the conductive color resist.

For example, FIGS. 5A to 5C show an example in which the conductive layer is formed of the same material as the source line. That is, in FIG. 5A, when the source line 504 is formed by patterning, the conductive layer 512 made of the same material as the source line 504 is also formed by patterning. After that, FIG. 5 (B)
Conductive color resists 506 to 508 are formed as shown in FIG. According to the method of forming the conductive layer 512 using the same material as the source line 504, it is not necessary to add a new photo and etching step to form the conductive layer, and the number of steps is reduced and the yield is improved. Can be achieved.

FIG. 6 is a plan view showing the structure of this embodiment. As shown in FIG. 6, in this embodiment, the conductive layer 512 made of metal or the like is drawn out from the contact hole 513 so that the contact resistance between the conductive color resist 506 and the conductive color resist 506 is sufficiently low. Determines the size of the contact area. However, when the conductive layer 512 is made of a non-translucent material, if the contact area is made too large, the aperture ratio will decrease. Therefore, the size of the contact area depends on the required contact resistance and aperture ratio. Need to decide.

Further, FIG. 7 shows an example in which the conductive layer 512 is formed in the peripheral portion of the conductive color resist 506 which becomes the pixel electrode. That is, in the structure of FIG. 6 in which the conductive layer 512 is formed only in the peripheral portion of the contact hole 513, the parasitic resistance between the portion of point K in FIG. 7 and the drain region 509 of the thin film transistor becomes large. If this parasitic resistance becomes large, the effective voltage applied to the liquid crystal at the position of point K, for example, becomes low, causing a problem of image quality deterioration. On the other hand, with the structure in which the conductive layer 512 is formed in the peripheral portion of the conductive color resist 506 as shown in FIG. 7, the parasitic resistance between the drain region 509 and the point K can be reduced, and the image quality as described above can be obtained. The problem of deterioration can be prevented.

With the structure shown in FIG. 7, the conductive layer 512 provided in the peripheral portion can also be used as a part of the black matrix. This is because the conductive color resist 506 serves as a color filter and the black matrix is formed around the color filter. In this case, the gate line 503, the source line 504, the black matrix provided on the thin film transistor side substrate, or the black matrix provided on the counter electrode becomes another part of the black matrix. Further, as shown in FIG. 7, according to the configuration in which the conductive layer 512 in the peripheral portion is part of the black matrix, the conductive layer 512 is
Since the alignment between the conductive color resist 506 and the conductive color resist 506 is accurately performed by an optical device or the like, the conductive color resist 5
It is possible to accurately arrange the black matrix with respect to 06.

4. Fourth Embodiment The fourth embodiment shows an example of a case where a black matrix is incorporated in the thin film transistor side substrate in the third embodiment, and the steps are shown in FIGS. 8 (A) to 8 (D). A cross-sectional view is shown. Unlike the third embodiment, in the fourth embodiment, the black matrix 810 is formed selectively with respect to the color resists 806 to 808 by using the LPD method in FIG. 8C. Since the method of forming the black matrix 810 by the LPD method and the effect of using this method are as already described in the second embodiment, the description thereof will be omitted. 8 (A) to (D)
Then, an example in which the conductive layer 812 is formed of the same material as the source line is shown, but the conductive layer may be formed of a material different from that of the source line.

5. Fifth Embodiment A fifth embodiment is an embodiment relating to a reflection type active matrix liquid crystal display device in which a conductive coloring layer is formed on a non-translucent (light reflecting) pixel electrode, and FIG. A) ~
A sectional view of the process is shown in FIG. First, FIG. 9 (A)
After the thin film transistor 902 and the insulating film 905 are formed by, the non-translucent conductive layer such as metal is patterned to form the source line 904 and the pixel electrode 912. The pixel electrode 912 is in contact with the drain region 909. Further, it is desirable that the material of the conductive layer has a high reflectance as much as possible. Next, as shown in FIG. 9B, red, green, and blue color filters 90 that are conductive colored layers are used.
6, 907 and 908 are patterned by a light exposure technique or the like to be formed on the pixel electrode. The subsequent steps are the same as those in the first embodiment.

In the conventional reflection type liquid crystal display device, the color filter was formed on the counter substrate side. However, in the reflective liquid crystal display device, only the reflected light serves as the light source,
It is desired to further increase the aperture ratio. In this embodiment, the aperture ratio can be improved by incorporating the color filter in the thin film transistor side substrate 901. Further, by making the color filter conductive, it is possible to prevent the problem of voltage division caused by the color filter being interposed between the pixel electrode and the liquid crystal element.

The conductive colored layer of this embodiment may be formed by dispersing a pigment or other coloring matter and a conductive substance such as ITO in the resist. Alternatively, for example, a conductive substance may be dispersed. It can also be formed by dyeing a dyed medium such as gelatin, or by mixing a conductive material into printing ink or the like.

Further, in FIGS. 9A to 9C, the source line 9
04 and the pixel electrode 912 are made of the same material, which simplifies the process and reduces the cost. However, it is naturally possible to form the source line and the pixel electrode with different materials.

Further, the liquid crystal element 919 sealed in this embodiment.
Is preferably a polymer dispersed liquid crystal (PDLC). Unlike TN liquid crystal, PDLC has an advantage that the transmission of light can be controlled by the scattering intensity and a polarizing plate is unnecessary.
By eliminating the need for a polarizing plate, the aperture ratio can be improved and the manufacturing cost of the device can be reduced. PDLC can be realized by dispersing liquid crystal molecules of the order of μm in a polymer or by including liquid crystal in a network polymer.

When the conductive colored layer is used as a color resist, it is desirable that the ratio of the solid components such as the dye and the conductive substance contained in the color resist be 30% or less, as in the first embodiment. The specific resistance of the conductive colored layer is preferably 1 × 10 ⁷ Ω · cm or less, and 1 × 10 ⁶
It is more desirable that it is Ω · cm or less. When the conductive fine particles are dispersed, it is desirable that the conductive fine particles have a dish shape, a rod shape, or the like, and that the surface of the conductive fine particles is subjected to a hydrophobic treatment with a coupling agent or the like.

6. Sixth Embodiment In the sixth embodiment, a color resist is formed on the pixel electrode,
This is an example of patterning the pixel electrode using the color resist as a mask, and FIGS. 10A to 10E are sectional views of the process. First, after forming the thin film transistor 1002 and the insulating film 1005 in FIG. 10A, a contact hole is opened as shown in FIG.
ITO 1014 which is a material for the pixel electrode is formed on the entire surface. At this time, a protective film for the source line 1004 may be formed if necessary. Next, as shown in FIG. 10C, patterns of a red color resist 1006, a green color resist 1007, and a blue color resist 1008 are sequentially formed. As such a color resist, for example, a pigment dispersion type resist formed by dispersing a pigment in the resist can be used. After that, as shown in FIG. 10D, the formed color resists 1006 to 1008 are used as masks for ITO 1014.
Are etched to form a pixel electrode 1012. The subsequent steps are the same as those in the first embodiment. This makes it possible to form the pixel electrode and the color filter on the thin film transistor side substrate.

According to this embodiment, the color resist 100 is used.
The pixel electrodes made of ITO are arranged below the elements 6 to 1008. Then, for example, color resist 1006
˜1008 has a high resistance, the resistance in the vertical direction is small because the thickness of the color resist is small. Therefore, the reduction of the effective voltage applied to the liquid crystal due to the high resistance is effectively prevented. Further, in this embodiment, since the pixel electrodes are etched using the color resists 1006 to 1008 as a mask, the step of forming a resist for patterning the pixel electrodes can be omitted. As a result, the number of steps can be reduced and the yield can be improved.

In this case, it is desirable that the color resists 1006 to 1008, which serve as color filters, have conductivity. When the color resist serving as the color filter is made conductive, the problem of voltage division caused by the color resist interposed between the pixel electrode and the liquid crystal element is prevented, and electrons are trapped in the color resist to cause an afterimage. This also prevents the occurrence of

As in the first embodiment, it is desirable that the ratio of the solid components such as the dye and the conductive substance contained in the color resist is 30% or less, and the specific resistance of the conductive color resist is 1 ×. It is preferably 10 ⁷ Ω · cm or less, more preferably 1 × 10 ⁶ Ω · cm or less. When the conductive fine particles are dispersed, it is desirable that the conductive fine particles have a dish shape, a rod shape, or the like, and that the surface of the conductive fine particles is subjected to a hydrophobic treatment with a coupling agent or the like.

Further, if the pixel electrode 1012 is formed of a non-translucent conductive layer such as metal, a reflection type active matrix type liquid crystal display device can be constructed as in the fifth embodiment.

7. Seventh Embodiment A seventh embodiment shows an example of a case where a black matrix is incorporated in the thin film transistor side substrate in the sixth embodiment, and the steps are shown in FIGS. 11 (A) to (E). A cross-sectional view is shown. Unlike the sixth embodiment, the seventh embodiment uses the LPD method to selectively form the black matrix 1110 with respect to the color resists 1106 to 1108 in FIG. 11D. Since the method of forming the black matrix 1110 by the LPD method and the effect of using this method are as already described in the second embodiment, the description thereof will be omitted.

8. Eighth Example The eighth example is an example in which a resist for patterning a pixel electrode is used to form an insulating film serving as a protective film by using the LPD method, and FIGS. The process sectional drawing is shown in E). First, after forming the thin film transistor 1202 and the insulating film 1205 in FIG.
As shown in (B), a contact hole is opened and ITO 1214 which is a material for the pixel electrode is formed on the entire surface. At this time, a protective film for the source line 1204 may be formed if necessary. Next, as shown in FIG. 12C, a resist pattern 1206 for patterning the pixel electrode is formed. After that, as shown in FIG. 12D, the ITO 1214 is formed using the formed color resist 1206 as a mask.
Are etched to form a pixel electrode 1212. next,
Using the resist pattern 1206 on the pixel electrode 1212 as a mask, the insulating film 1220 is selectively formed by the LPD method. The insulating film 1220 serves as a protective film for the source line 1204. The method of forming the insulating film 1220 by the LPD method and the effect of using this method are almost the same as those described in the second embodiment.
The difference is that it is not necessary to include a dye in 0.

In the conventional example, when the insulating film serving as the protective film for the source line is formed, a step of removing the insulating film above the pixel electrode is necessary to prevent the effective voltage applied to the liquid crystal from decreasing. there were. On the other hand, the LPD method uses the insulating film 1
220 is characterized in that it can be selectively formed in a region where the resist pattern 1206 is not present.
The insulating film 1220 is formed using the characteristics of the PD method.
Therefore, the step of removing the insulating film above the pixel electrode is not necessary, which can reduce the number of steps and improve the yield. By using the LPD method,
Since the insulating film can be formed at a low temperature around room temperature, an inexpensive glass substrate can be adopted as the substrate. Further, by using the LPD method, the insulating film can be formed of a silicon oxide film which is generally used in manufacturing a thin film transistor. Therefore, there are advantages such as easy selection of chemicals used in the manufacturing process. In addition, when the insulating film 1220 and another insulating film forming the thin film transistor have a multilayer structure,
Since these are made of the same material, there is an advantage that the adverse effect of strain caused by stress or the like can be reduced. Furthermore,
In this embodiment, the insulating film 1 is formed by using the LPD method.
Since 220 is formed in self-alignment with the resist pattern 1206, it is possible to improve the aperture ratio.

The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the gist of the present invention.

For example, the conductive colored layer may have at least a conductive function and a colored layer function, and is not limited to the one described in the first embodiment and the like.

Further, for example, the LPD method used in the present invention is not limited to the one described in the above embodiment, and a saturated aqueous solution of a compound containing at least one substance constituting an insulating substance is supersaturated to obtain the insulating substance. Any film forming method may be used as long as it is deposited.

The manufacturing method of the active matrix type liquid crystal display device of the present invention is not limited to the manufacturing method described in the above embodiment.

Further, the structure of the thin film transistor is not limited to that described in the above embodiment, but the reverse Sugata type and the positive Sugata type structure in the amorphous (amorphous) silicon thin film transistor, the planar type in the poly (polycrystalline) silicon thin film transistor, Various types such as a positive sugata type structure can be adopted.

[0122]

According to the present invention, since it is not necessary to form a color filter on the counter substrate, the manufacturing cost of the counter substrate can be reduced, and the margin of accuracy in bonding the thin film transistor side substrate and the counter substrate can be greatly relaxed.
Further, since the step of forming the pixel electrode material and the patterning step thereof can be omitted, the cost can be reduced and the yield can be improved. Further, it is possible to prevent the problem of image quality deterioration due to the decrease of the effective voltage applied to the liquid crystal, and it is possible to increase the aperture ratio.

Further, according to the present invention, since the insulating film serving as the black matrix can be formed at a low temperature, it is possible to employ an inexpensive glass substrate, which can reduce the product cost and
It is also possible to prevent a situation in which the device characteristics of the thin film transistor deteriorate due to the heating temperature. Further, the step of etching the insulating film can be omitted, and the cost of the product can be reduced. Further, the black matrix can be formed with high accuracy, and the aperture ratio can be improved. Further, since problems such as glare and cracks can be solved, display characteristics and reliability can be improved.

Further, according to the present invention, it is possible to realize a reflection type liquid crystal display device which has a simple process and a low cost and has excellent display characteristics such as an aperture ratio.

Further, according to the present invention, since it is possible to effectively prevent the reduction of the effective voltage applied to the liquid crystal, it is possible to improve the display characteristics. Moreover, since the patterning of the pixel electrode is performed using the color resist as a mask, the number of steps can be reduced, the yield can be improved, and the manufacturing cost can be reduced.

Further, according to the present invention, the step of removing the insulating film on the pixel electrode can be omitted, and the yield can be improved. Further, it becomes possible to employ an inexpensive glass substrate, prevent deterioration of device characteristics of thin film transistors, and the like.

[0127]

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a structure of a conventional active matrix type liquid crystal display device.

2A to 2C are process sectional views of a first embodiment in which a conductive colored layer also serves as a pixel electrode.

3A to 3D are process cross-sectional views of a second embodiment in which a black matrix is incorporated in a thin film transistor side substrate in the first embodiment.

4A to 4D are process cross-sectional views of a third embodiment in which a conductive layer is interposed between a conductive colored layer and a drain region.

5A to 5C are process cross-sectional views in the case of forming a conductive layer of the same material as the source line in the third embodiment.

FIG. 6 is a plan view showing the structure of the third embodiment.

FIG. 7 is a plan view showing a structure of a third embodiment in which a conductive layer is formed in the peripheral portion of the conductive colored layer.

8A to 8D are process cross-sectional views of a fourth embodiment in which a black matrix is incorporated in a thin film transistor side substrate in the third embodiment.

9A to 9C are process cross-sectional views of a fifth embodiment in which a conductive colored layer is formed on a non-translucent pixel electrode to form a reflective liquid crystal display device. Is.

10A to 10E are process sectional views of a sixth embodiment in which a color resist is formed on a pixel electrode and the pixel electrode is patterned by the color resist.

11A to 11E are process sectional views of a seventh embodiment in which a black matrix is incorporated in a thin film transistor side substrate in the sixth embodiment.

12A to 12E are process cross-sectional views of an eighth embodiment in which an insulating film is formed by the LPD method using a resist for patterning pixel electrodes.

FIG. 13 is a diagram showing the relationship between the solid component ratio and the pot life.

FIGS. 14A to 14C are diagrams showing the relationship between the specific resistance and the difference in effective value.

15A and 15B are diagrams showing the relationship between the specific resistance and the difference in effective value.

[Explanation of symbols]

201, 301, 401, 501, 801, 901, 1
001, 1101, 1201 ... Thin film transistor side substrate 202, 302, 402, 502, 802, 902, 1
002, 1102, 1202 ... Thin film transistor 206-208, 306-308, 406-408, 5
06-508, 806-808, 1006-1008,
1106 to 1108 ... Color resist 906 to 908 ... Conductive colored layer 1206 ... Resist pattern 209, 309, 409, 509, 809, 909, 1
009, 1109, 1209 ... Drain region 310, 810, 1110 ... Black matrix 411, 512, 812 ... Conductive layer 1014, 1114, 1214 ... ITO 912, 1012, 1112, 1212 ... -Pixel electrodes 217, 317, 417, 517, 817, 917, 1
017, 1117 ... Counter substrate 218, 318, 418, 518, 818, 918, 1
018, 1118 ... Counter electrodes 219, 319, 419, 519, 819, 919, 1
019, 1119 ... Liquid crystal 220, 420, 520, 920, 1020, 112
0, 1220 ... Insulating films 221, 321, 421, 521, 821, 921, 1
021, 1121, ... Alignment films 222, 322, 422, 522, 822, 922, 1
022, 1122 ... Alignment film

Claims (34)

[Claims] 1. An active matrix liquid crystal display device comprising a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. An active matrix type liquid crystal display device, wherein a conductive colored layer is provided as a color filter for display on the thin film transistor side substrate, and the conductive colored layer also serves as a pixel electrode selectively driven by the thin film transistor. . 2. The active matrix type liquid crystal display device according to claim 1, wherein the conductive colored layer is formed by dyeing a dyeing medium in which a conductive substance is dispersed. 3. The active matrix type liquid crystal display device according to claim 1, wherein the conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in the resist. . 4. The active matrix type liquid crystal display device according to claim 3, wherein a ratio of a solid component containing the dye and the conductive substance in the color resist is 30% or less. 5. The black matrix according to claim 3, further comprising a black matrix formed of an insulating film formed in a region of the color resist where the pattern is not formed, wherein the insulating film of the black matrix is formed. ,
An active material characterized in that a film is formed by adding a light-shielding dye to a saturated aqueous solution of a compound containing at least one substance that constitutes an insulating substance, bringing the saturated aqueous solution into a supersaturated state, and precipitating the insulating substance. Matrix type liquid crystal display device. 6. The active matrix type liquid crystal display device according to claim 5, wherein the insulating film is formed of a silicon oxide film. 7. The conductive layer according to claim 1, wherein a conductive layer for contacting the drain region and the conductive colored layer is interposed between the drain region of the thin film transistor and the conductive colored layer. An active matrix type liquid crystal display device characterized in that 8. The active matrix liquid crystal display device according to claim 7, wherein the conductive layer is formed of the same material as a source line connected to a source region of the thin film transistor. 9. The active matrix type liquid crystal display device according to claim 7, wherein the conductive layer is formed in a peripheral portion of the pixel electrode. 10. The active matrix type liquid crystal display device according to claim 7, wherein the conductive layer is a part of a black matrix serving as a light shielding layer. 11. A reflective active matrix liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. As a color filter for color display, a conductive colored layer is provided on the thin film transistor side substrate, a pixel electrode selectively driven by the thin film transistor is provided below the colored layer, and the pixel electrode is non-transparent. A reflective active matrix type liquid crystal display device characterized by being made of a light-transmitting material. 12. The reflective active matrix liquid crystal display device according to claim 11, wherein the pixel electrode is formed of the same material as a source line connected to a source region of the thin film transistor. 13. The reflective active matrix liquid crystal display device according to claim 11, wherein the liquid crystal element is a polymer dispersed liquid crystal element. 14. The reflective active matrix liquid crystal display according to claim 11, wherein the conductive colored layer is formed by dyeing a dyeing medium in which a conductive substance is dispersed. apparatus. 15. The reflective active layer according to claim 11, wherein the conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in the resist. Matrix type liquid crystal display device. 16. The reflective active matrix type liquid crystal display device according to claim 15, wherein a ratio of a solid component containing the dye and the conductive substance in the color resist is 30% or less. 17. An active matrix type liquid crystal display device comprising a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A color resist as a color filter for display is provided on the thin film transistor side substrate, and a pixel electrode selectively driven by the thin film transistor is provided below the color resist, and the pixel electrode uses the color resist as a mask. An active matrix type liquid crystal display device characterized by being patterned. 18. The black matrix according to claim 17, comprising a black matrix formed of an insulating film formed in a region where the pattern of the color resist is not formed, and the insulating film of the black matrix,
An active material characterized in that a film is formed by adding a light-shielding dye to a saturated aqueous solution of a compound containing at least one substance that constitutes an insulating substance, bringing the saturated aqueous solution into a supersaturated state, and precipitating the insulating substance. Matrix type liquid crystal display device. 19. The active matrix type liquid crystal display device according to claim 18, wherein the insulating film is formed of a silicon oxide film. 20. The active matrix liquid crystal display device according to claim 17, wherein the color resist is a conductive colored layer formed by dispersing a dye and a conductive substance in the resist. . 21. The active matrix type liquid crystal display device according to claim 20, wherein a ratio of a solid component containing the dye and the conductive substance in the color resist is 30% or less. 22. The active matrix liquid crystal display device according to claim 1, wherein the conductive colored layer has a specific resistance of 1 × 10 ⁷ Ω · cm or less. 23. The active matrix type liquid crystal display device according to claim 1, wherein the specific resistance of the conductive colored layer is 1 × 10 ⁶ Ω · cm or less. 24. The conductive colored layer according to any one of claims 1 to 16 and 20 to 23, wherein the conductive colored layer is formed by dispersing conductive fine particles having a dish shape in the colored layer. Characteristic active matrix type liquid crystal display device. 25. The conductive colored layer according to any one of claims 1 to 16 and 20 to 23, wherein the conductive colored layer is formed by dispersing conductive fine particles having a rod shape in the colored layer. Active matrix liquid crystal display device. 26. The conductive colored layer according to any one of claims 1 to 16 and 20 to 25, wherein the conductive colored layer is formed by dispersing conductive fine particles hydrophobically treated with a coupling agent in the colored layer. An active matrix type liquid crystal display device characterized by the above. 27. An active matrix liquid crystal display device comprising a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate, A pixel electrode selectively driven by a thin film transistor, a resist provided on the pixel electrode and used for patterning the pixel electrode, and an insulating film formed in a region where the resist pattern is not formed, An active matrix liquid crystal display device, wherein the insulating film is formed by bringing a saturated aqueous solution of a compound containing at least one substance forming an insulating substance into a supersaturated state to deposit the insulating substance. 28. A method of manufacturing an active matrix type liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A step of forming a contact hole for making contact with the drain region of the thin film transistor, and a conductive colored layer which is a color filter for color display and is connected to the drain region through the contact hole. And a step of forming it on the thin film transistor side substrate. 29. The conductive color resist according to claim 28, wherein the conductive colored layer is a conductive color resist formed by dispersing a dye and a conductive substance in the resist, and a pattern of the color resist is formed. In the non-existing region, a black matrix is formed by a film forming method in which a saturated aqueous solution of a compound containing at least one substance that constitutes an insulating substance is added with a light-shielding dye to bring the saturated aqueous solution into a supersaturated state to precipitate the insulating substance. A method for manufacturing an active matrix type liquid crystal display device, which comprises the step of forming an insulating film. 30. The drain region of the thin film transistor and the conductive colored layer according to claim 28, between the step of forming the contact hole and the step of forming the conductive colored layer. A method of manufacturing an active matrix type liquid crystal display device, which comprises the step of forming a conductive layer for contacting with each other. 31. A reflective active matrix liquid crystal display device including a thin film transistor side substrate having a thin film transistor, a counter substrate having a counter electrode, and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. A method of forming a pixel electrode made of a non-translucent material that is selectively driven by the thin film transistor, and forming a conductive colored layer serving as a color filter for color display on the pixel electrode. A method of manufacturing a reflection type active matrix type liquid crystal display device, comprising: 32. A method of manufacturing an active matrix type liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. And forming a pixel electrode material serving as a material of a pixel electrode selectively driven by the thin film transistor, forming a color resist serving as a color filter for color display on the pixel electrode material, And a step of patterning the pixel electrode material using a resist as a mask, the method of manufacturing an active matrix type liquid crystal display device. 33. The saturated aqueous solution of a compound containing at least one substance which constitutes an insulating material is added to a region of the color resist where the pattern is not formed, the dye being used for light shielding. A method of manufacturing an active matrix type liquid crystal display device, which comprises a step of forming an insulating film which becomes a black matrix by a film forming method in which an aqueous solution is supersaturated to deposit the insulating material. 34. A method of manufacturing an active matrix type liquid crystal display device, comprising: a thin film transistor side substrate having a thin film transistor; a counter substrate having a counter electrode; and a liquid crystal element sandwiched between the thin film transistor side substrate and the counter substrate. Then, a step of forming a pixel electrode material serving as a material of a pixel electrode selectively driven by the thin film transistor, a step of forming a resist for patterning the pixel electrode on the pixel electrode material, and the color resist as a mask Patterning the pixel electrode material, and bringing a saturated aqueous solution of a compound containing at least one substance forming an insulating material into a supersaturated state in the region where the resist pattern is not formed to deposit the insulating material Including a step of forming an insulating film to be a protective film by a film forming method Method for manufacturing an active matrix type liquid crystal display device comprising and.