JPH0831368A - Ion implanting device - Google Patents

Abstract

PURPOSE:To provide an ion implanting device which can make ion implantation into a specimen easily and certainly by furnishing a heating means for the specimen in a load lock chamber. CONSTITUTION:A heating means composed of a halogen lamp 21, reflection plate 22, and diffusion plate 23 is installed in a load lock chamber 2. A wafer 25 is subjected to a heat treatment made by the heating means in parallel with putting inside the load lock chamber 2 in a vacuum condition.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implanter.

[0002]

2. Description of the Related Art When ion implantation is performed on a silicon wafer or the like using an ion implantation apparatus, a photoresist is generally used as a mask. In this case, if the photosensitive organic substance such as the photoresist is not previously heat-treated, outgas is generated when the ion beam is irradiated, and the degree of vacuum in the ion implantation chamber is lowered.

As a result, impurities other than the desired ions may be implanted, which may adversely affect the characteristics of the semiconductor device.

Therefore, conventionally, the silicon wafer has been previously heat-treated in a heating furnace or the like different from the ion implantation apparatus, and then transferred to the ion implantation apparatus for ion implantation.

[0005]

As described above, when a wafer such as a heating furnace, which is different from the ion implantation apparatus, is used to preheat the wafer before the ion implantation, the wafer is moved between the apparatuses. It took time and effort.

It is an object of the present invention to provide an ion implantation apparatus which can easily heat-treat a sample before ion implantation.

[0007]

According to the present invention, a heating means for heating the sample is provided in a load lock chamber for loading / unloading the sample into / from the ion implantation chamber.
This is to solve the above problem.

In particular, the heating means is preferably a halogen lamp.

[0009]

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows the configuration of the main part of the ion implantation apparatus.
In the figure, 1 is an ion implantation chamber and 2 is an ion implantation chamber 1.
It is a load lock chamber for inserting a silicon wafer as a sample into. The inside of the ion implantation chamber 1 is maintained in a vacuum state by exhaust means (not shown). In the load lock chamber 2, halogen lamps 21 to 21, a reflector 22,
A diffusion plate 23 and a wafer stage 24 are provided. 25 is a wafer. The halogen lamp 21, the reflection plate 22, and the diffusion plate 23 constitute a heating means for heating the wafer 25.

FIG. 2 shows an internal cross section of the load lock chamber 2 taken along the alternate long and short dash line A shown in FIG. In the figure, the same reference numerals as those in FIG. 1 indicate the same elements.
A reflection plate 22 is provided on the upper side of the halogen lamp 21, and a diffusion plate 23 is provided on the lower side.

Next, the operation of putting the wafer 25 into the ion implantation chamber 1 will be described.

First, a wafer 25 coated with a photoresist as a mask is placed in the load lock chamber 2 and the load lock chamber 2 is sealed.

Next, the exhaust means (not shown) is driven and the halogen lamp 21 is turned on. Thus, while the load lock chamber 2 is being evacuated, the wafer 25 is heated by the heat generated by lighting the halogen lamp 21.
To heat.

Light rays from the halogen lamp 21 are reflected by the reflection plate 2.
It is reflected by 2, and diffused by the diffusion plate 23 to be uniformly irradiated on the surface of the wafer 25.

When the load lock chamber 2 is evacuated and the heat treatment of the wafer 25 is completed, the shield between the load lock chamber 2 and the ion implantation chamber 1 is released, and the load lock chamber 2 is moved into the ion implantation chamber 1. The wafer 25 is transferred.

As described above, the wafer 25 is heat-treated in parallel with the vacuum state in the load lock chamber 2 and then placed in the ion implantation chamber 1.

[0018]

According to the present invention, since the heating means is provided in the load lock chamber and the sample can be heat-treated in parallel with the vacuum state in the load lock chamber, it is provided separately from the ion implantation apparatus. It is possible to easily and surely perform ion implantation into the sample without the trouble of pre-heating the sample with the heating means.

[Brief description of drawings]

FIG. 1 is an explanatory view showing a main configuration of an ion implantation apparatus according to the present invention.

FIG. 2 is an explanatory diagram showing a main configuration of an ion implantation apparatus according to the present invention.

[Explanation of symbols]

 1 Ion implantation chamber 2 Load lock chamber 21 Halogen lamp 22 Reflector 23 Diffuser 25 Wafer

Claims (2)

[Claims] 1. An ion implantation apparatus comprising a load lock chamber for loading and unloading a sample into and from the ion implantation chamber, and heating means for heating the sample. 2. The ion implanter according to claim 1, wherein the heating means is a halogen lamp.