JPH08311699A - Method for agitating in electroplating device - Google Patents

Abstract

PURPOSE: To control the flow of a plating soln. and to obtain a uniform plating film thickness at the time of electroplating a semiconductor wafer in the plating soln. by agitating the soln. in the vicinity of the wafer with an agitating member provided with many elastic wires. CONSTITUTION: A semiconductor wafer 1 is pressed and fixed on the peripheral part of a plating jig 2 to be placed in a plating tank through a packing 3 and a packing presser 4. The wafer 1 is placed in a plating soln., an agitating member 10 is confronted with the wafer 1 and vertically set, and the agitating member 10 is horizontally reciprocated in parallel with the wafer 1 to agitate the plating soln. The agitating member 10 is flocked with many elastic brush bristles 12, and the bristle density is decreased at the upper part and increased at the lower part. As a result, the plating soln. is uniformly agitated in the depth direction, and a uniform plating thickness is obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stirring method for an electroplating apparatus for electroplating a semiconductor wafer in a plating solution.

[0002]

2. Description of the Related Art In such electroplating, the plating solution is agitated in order to make the plating film thickness of a semiconductor wafer constant.

The semiconductor wafer 1 is, as shown in FIG.
Stored in the plating jig 2 inside the plating tank T (FIG. 9),
The peripheral edge of the packing 3 and the packing retainer 4 is fixed to the plating jig 2 by pressure.

In the conventional stirring, the stirring rod 5 is provided near the wafer 1.
And the stirring rod 5 is moved in parallel with the wafer 1 in the plating tank T to stir the plating solution L as shown by the arrow in FIG.

Further, as shown in FIG. 10, a method has also been adopted in which the plating liquid L is circulated by a circulation pump (not shown) as indicated by an arrow and agitated by a jet flow 7 from a bottom jet port 6.

[0006]

In the conventional stirring method,
Although there was no horizontal stirring unevenness of the plating solution L, it was difficult to eliminate the stirring unevenness in the depth direction.

It is an object of the present invention to provide a stirring method for an electroplating apparatus which can eliminate uneven stirring of the plating solution in the depth direction.

[0008]

According to the present invention, in an electroplating apparatus for electroplating a semiconductor wafer in a plating solution, the plating solution in the vicinity of the semiconductor wafer is agitated with a large number of elastic strands. It is characterized by stirring.

Further, according to the present invention, the stirring member is moved in parallel with the plating surface of the semiconductor wafer.

Further, according to the present invention, the planting density of a large number of elastic element wires of the stirring member arranged vertically is set to be large downward.

[0011]

In the stirring method of the electroplating apparatus configured as described above, the plating liquid can be uniformly stirred in the depth direction by the movement of many elastic element wires.

[0012]

Embodiments of the present invention will be described below with reference to the drawings. Note that, in these drawings, portions corresponding to those in FIGS. 8 and 9 are denoted by the same reference numerals, and redundant description will be omitted.

1 to 3 show a stirring member embodying the present invention. The stirring member 10 is the wafer 1
Is arranged vertically in the vicinity of. This stirring member 10 is
Brush holder 11 and wafer 1 of the brush holder 11
It is composed of a large number of brush bristles 12 which are elastic members planted on the side. The brush bristle 12 has a smaller bristle density on the upper side and a larger bristle density on the lower side.

Next, the mode of stirring will be described.

In FIG. 4, the stirring member 1 is placed in the plating tank T.
0 is arranged vertically facing the wafer 1 and its stirring member 1
0 is reciprocated in the range W in parallel with the wafer 1 by means not shown. As a result, the plating solution L is preferably agitated, and since the brush bristles 12 have a higher bristling density toward the bottom, they are agitated in the depth direction without even agitation. Therefore, the flow of the plating solution L, which greatly affects the plating film thickness, is controlled, and a uniform plating film thickness is obtained. Further, even if the brush bristles 12 contact the wafer 1, the damage is small.

5 and 6 show another embodiment of the stirring member. The stirring member 10A includes a horizontally arranged brush holder 11A and a large number of brush bristles 12 which are planted at a uniform density on the wafer 1 side of the brush holder 11A.
It consists of A. In this embodiment, as shown in FIG. 7, by moving the stirring member 10A up and down in the range H up and down, it is possible to eliminate uneven stirring in the depth direction.

[0017]

Since the present invention is configured as described above, it is possible to eliminate uneven stirring in the depth direction and control the flow of the plating solution to obtain a uniform plating film thickness.
Moreover, the density of the brush bristles can be arbitrarily selected to control the uneven stirring in the depth direction. Further, the brush bristles are effective because they are less damaged even if they come into contact with the plated surface.

[Brief description of drawings]

FIG. 1 is a side view showing an example of a stirring member for carrying out the present invention.

FIG. 2 is a top view of FIG.

FIG. 3 is a layout diagram of FIG.

FIG. 4 is a front view of the inside of a plating tank for explaining an embodiment of the present invention.

FIG. 5 is a top view showing another example of the stirring member for carrying out the present invention.

FIG. 6 is a top view of FIG.

FIG. 7 is a front view of the inside of a plating tank for explaining another embodiment of the present invention.

FIG. 8 is a side view showing an example of a conventional stirring member.

FIG. 9 is a front view of the inside of a plating tank for explaining an example of a conventional stirring method.

FIG. 10 is a front view of the inside of a plating tank for explaining another example of the conventional stirring method.

[Explanation of symbols]

 L ... Plating liquid T ... Plating tank 1 ... Semiconductor wafer 2 ... Plating jig 3 ... Packing 4 ... Packing retainer 5 ... Stirring rod 6 ... Bottom nozzle 7 ... ..Jet flow 10, 10A ... Stirring member 11, 11A ... Brush holder 12, 12A ... Brush bristles

Claims (3)

[Claims] 1. An electroplating apparatus for electroplating a semiconductor wafer in a plating solution, wherein the plating solution in the vicinity of the semiconductor wafer is agitated by an agitating member having a large number of elastic wires. Stirring method. 2. The stirring method for an electroplating apparatus according to claim 1, wherein the stirring member is moved in parallel with the plating surface of the semiconductor wafer. 3. The stirring method for an electroplating apparatus according to claim 1, wherein the planting density of a large number of elastic strands of the vertically arranged stirring member is set to be large downward.