JPH0829934B2 - Method for producing high-purity silica - Google Patents
Method for producing high-purity silicaInfo
- Publication number
- JPH0829934B2 JPH0829934B2 JP29969288A JP29969288A JPH0829934B2 JP H0829934 B2 JPH0829934 B2 JP H0829934B2 JP 29969288 A JP29969288 A JP 29969288A JP 29969288 A JP29969288 A JP 29969288A JP H0829934 B2 JPH0829934 B2 JP H0829934B2
- Authority
- JP
- Japan
- Prior art keywords
- hsicl
- particle size
- silicon
- sicl
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/006—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、高純度でかつ均一な粒子径のシリカ粉末の
製造方法に関する。TECHNICAL FIELD The present invention relates to a method for producing silica powder having high purity and a uniform particle size.
〈従来技術およびその問題点〉 電子材料として使用される高純度な石英ガラス等を製
造するには、150〜425μmの粒径を有する均一な粒子の
シリカ粉末が要求される。その原料は従来比較的純度の
高い天然石英を粉砕するかまたは人工的にSiCl4を純水
で加水分解して、脱塩酸および脱水したものが用いられ
ている。<Prior Art and its Problems> In order to produce high-purity quartz glass or the like used as an electronic material, uniform silica powder having a particle diameter of 150 to 425 μm is required. As the raw material, conventionally, one obtained by pulverizing relatively high-purity natural quartz or artificially hydrolyzing SiCl 4 with pure water, dehydrochlorination and dehydration is used.
しかし天然石英の粉砕にはボールミルあるいはジョー
クラッシャーなどの粉砕機で適切な粒径の粉末としなけ
ればならず、これらの粉砕機の機構上摩耗が起り、摩耗
粉が石英粉末に混入して石英粉末の純度が低下すること
は避けられない。またSiCl4を純水で加水分解すること
により人工的に高純度シリカを製造する方法において
も、従来製造される高純度シリカの粒径は比較的大き
く、天然石英の場合と同様に粉砕が必要となり、粉砕機
からの不純物の混入が避けられない。However, in order to pulverize natural quartz, it is necessary to use a ball mill, a jaw crusher, or other pulverizer to produce powder with an appropriate particle size, and wear occurs due to the mechanism of these pulverizers. It is unavoidable that the purity decreases. Also, in the method of artificially producing high-purity silica by hydrolyzing SiCl 4 with pure water, the particle size of conventionally-produced high-purity silica is relatively large, and it is necessary to pulverize it as in the case of natural quartz. Therefore, mixing of impurities from the crusher is unavoidable.
〈問題解決に係る知見〉 本発明者らは高純度でかつ電子材料用石英ガラスの原
料として好適な粒度シリカ粉末を得る方法について研究
した結果SiCl4、HSiCl3およびH2SiCl2から選ばれる2種
以上のハロゲン化ケイ素の混合物を加水分解することに
より、所望の粒径のシリカ粒子を製造でき、かつその混
合比を変えることによりシリカ粒子の粒度を調整できる
ことを見出した。The present inventors have <knowledge relating to problem solving> is 2 selected from highly pure a and results were studied how to obtain a suitable particle size silica powder as a raw material of quartz glass for electronic materials SiCl 4, HSiCl 3 and H 2 SiCl 2 It has been found that by hydrolyzing a mixture of at least one kind of silicon halide, silica particles having a desired particle size can be produced, and the particle size of silica particles can be adjusted by changing the mixing ratio.
〈発明の構成〉 本発明は、ハロゲン化ケイ素を純水で加水分解する高
純度シリカの製造方法において、2種以上のハロゲン化
ケイ素の混合物を純水で加水分解することを特徴とする
高純度シリカの製造方法を提供するものであり、更に
は、これらハロゲン化ケイ素の混合比を変えることによ
り異なった粒度のシリカ粒子を収率良く製造する方法を
提供するものである。<Structure of Invention> The present invention is a method for producing high-purity silica in which silicon halide is hydrolyzed with pure water, wherein a mixture of two or more kinds of silicon halide is hydrolyzed with pure water. The present invention provides a method for producing silica, and further provides a method for producing silica particles having different particle sizes in high yield by changing the mixing ratio of these silicon halides.
本発明のハロゲン化ケイ素としてはSiCl4、HSiCl3お
よびH2SiCl2の3種の中から選ばれる2種以上の混合物
が用いられる。SiCl4はHSiCl3と高純度水素とから多結
晶シリコンを製造するときに副生するものを蒸留分離精
製して得られ、HSiCl3およびH2SiCl2は金属シリコン粉
とHClとの反応により合成されたものを精留分離して得
られる。As the silicon halide of the present invention, a mixture of two or more selected from three kinds of SiCl 4 , HSiCl 3 and H 2 SiCl 2 is used. SiCl 4 is obtained by distilling and refining the by-product of producing polycrystalline silicon from HSiCl 3 and high-purity hydrogen, and HSiCl 3 and H 2 SiCl 2 are synthesized by the reaction between metallic silicon powder and HCl. The obtained product is obtained by rectification separation.
生成されるシリコン粒子の粒度はハロゲン化ケイ素混
合物中の混合比によって異なる。例えば後述する実施例
に示すようにSiCl4とHSiCl3との混合物において、HSiCl
3量が増加するにつれて生成されるシリコン粒子の粒径
は次第に微細化し、HSicl3量が約4重量%以下のとき、
生成シリカ粒子の約90重量%以上は425μ以上の粒径を
有する。またHSiCl3量が約8重量%〜約20重量%の範囲
では生成シリカ粒子の約83〜40重量%が150〜425μmの
粒径を有する。該HSiCl3量が約20重量%を超えると生成
シリカ粒子の殆んど全部が150μm以下の微粒子とな
る。従って、電子材料用石英ガラス原料として好適な15
0〜425μmの粒径を有するシリカ粒子を製造するにはHS
iCl3量が約4重量%〜約20重量%(SiCl4/HSiCl3=96/4
〜80/20)であれば良い。The particle size of the silicon particles produced depends on the mixing ratio in the silicon halide mixture. For example, in a mixture of SiCl 4 and HSiCl 3 as shown in Examples below, HSiCl
As the amount of 3 increased, the particle size of silicon particles produced gradually became finer, and when the amount of HSicl 3 was less than about 4% by weight,
About 90% by weight or more of the produced silica particles have a particle size of 425μ or more. Further, when the amount of HSiCl 3 is in the range of about 8% by weight to about 20% by weight, about 83-40% by weight of the produced silica particles have a particle size of 150-425 μm. When the amount of HSiCl 3 exceeds about 20% by weight, almost all of the produced silica particles are fine particles of 150 μm or less. Therefore, it is suitable as a quartz glass raw material for electronic materials.
HS to produce silica particles with a particle size of 0-425 μm
The amount of iCl 3 is about 4 wt% to about 20 wt% (SiCl 4 / HSiCl 3 = 96/4
~ 80/20) will do.
本発明に用いる純水は、イオン交換樹脂で脱イオン
し、逆浸透で精製したものが好ましい。もしくは本発明
によるハロゲン化ケイ素の加水分解物から生成したHCl
を除去した後の冷却凝集水(以下「回収水」と称する)
を使用してもよい。The pure water used in the present invention is preferably deionized with an ion exchange resin and purified by reverse osmosis. Alternatively, HCl produced from a hydrolyzate of a silicon halide according to the present invention
Cooled condensed water after removing water (hereinafter referred to as "recovered water")
May be used.
本発明を実施するには加水分解を行なう反応容器に純
水又は回収水を仕込み、容器内を不活性ガス雰囲気とし
た後所定組成のハロゲン化ケイ素の混合物を供給ノズル
より反応器に導入する。反応容器としては石英製または
テフロンコートした金属製のものが好ましい。ハロゲン
化ケイ素を導入するときは、加水分解反応を促進するた
め羽根形撹拌機もしくは超音波振動波による非接触撹拌
により撹拌するとよい。反応は常圧で行ない、温度はハ
ロゲン化ケイ素の沸点以下、例えばSiCl4(沸点は57
℃)が主であるときは57℃以下に制御することが好まし
い。ハロゲン化ケイ素の加水分解においてはHClが生成
しこれが純水に溶解吸収されて発熱するため、反応容器
には例えばジャケット式の冷却装置などが付属したもの
を用いて水で冷却して温度を制御する。反応の終了は反
応物がゲル化した時点とする。反応終了後該ゲル化した
物質を脱水、脱HClして乾燥すれば粉砕を必要としない
で高純度でかつ均一な所望の粒径シリカ粉末が得られ
る。To carry out the present invention, pure water or recovered water is charged into a reaction vessel in which hydrolysis is carried out, the inside of the vessel is made an inert gas atmosphere, and then a mixture of silicon halides having a predetermined composition is introduced into the reactor through a supply nozzle. The reaction vessel is preferably made of quartz or Teflon-coated metal. When the silicon halide is introduced, it may be stirred by a blade-type stirrer or non-contact stirring with an ultrasonic vibration wave in order to accelerate the hydrolysis reaction. The reaction is carried out at atmospheric pressure and the temperature is below the boiling point of the silicon halide, for example SiCl 4 (boiling point 57
(° C) is the main, it is preferable to control the temperature to 57 ° C or lower. In the hydrolysis of silicon halide, HCl is generated, and this is dissolved and absorbed in pure water to generate heat, so the reaction vessel is equipped with a jacket type cooling device, for example, and is cooled with water to control the temperature. To do. The reaction is terminated when the reaction product gels. After the completion of the reaction, the gelled substance is dehydrated, dehydrochlorinated and dried to obtain a silica powder having a desired particle size of high purity and uniform, which does not require pulverization.
〈発明の効果〉 本発明の方法によれば、2種以上のハロゲン化ケイ素
の純水との加水分解反応により粉末状の高純度なシリカ
を容易に、かつ収率良く製造することが出来る。更に本
発明の方法においては2種以上のハロゲン化ケイ素の適
切な混合比により得られるシリカ粒子を調節することが
できる。<Effect of the Invention> According to the method of the present invention, powdery high-purity silica can be easily produced in a high yield by the hydrolysis reaction of two or more kinds of silicon halides with pure water. Further, in the method of the present invention, the silica particles obtained can be adjusted by an appropriate mixing ratio of two or more kinds of silicon halides.
特に本発明の方法によれば、電子材料用石英ガラスの
原料として最適な粒径のシリカ粒子を製造できるので、
粉砕や造粒を必要とせず、極めて高純度の石英ガラスを
得ることが出来る。In particular, according to the method of the present invention, it is possible to produce silica particles having an optimum particle size as a raw material for quartz glass for electronic materials,
Quartz glass of extremely high purity can be obtained without crushing or granulating.
〈実施例〉 実施例1〜8 ハロゲン化ケイ素を供給するノズル、純水を供給する
ノズル、不活性ガスを導入するノズル、ガス排出口、温
度計のポケット、撹拌機、ジャケット式冷却装置を有す
るテフロンコートした鉄製の反応容器に純水1,000mlを
仕込み、不活性ガスを導入して反応容器内を不活性ガス
雰囲気に保持した。次いで、SiCl4とHSiCl3の混合液16
2.2g〜426.2gを不活性ガスで加圧した計量槽より流量を
20ml/粉で撹拌しながら反応容器に供給した。ハロゲン
化ケイ素混合物の加水分解反応の進行と共に生成するHC
lの純水への吸収熱により反応液の温度が上昇するの
で、容器内を約57℃以下に制御した。加水分解反応の終
了は生成したシリカがゲル化した時点とし、この時点で
ハロゲン化ケイ素の供給を停止した。該ゲル状物を加熱
脱水乾燥して高純度のシリカ粉末を得た。該シリカ粉末
の粒度と収量を次表に示す。SiCl4/HSiCl3の比を変えて
行なった結果を同表に示す。<Examples> Examples 1 to 8 A nozzle for supplying a silicon halide, a nozzle for supplying pure water, a nozzle for introducing an inert gas, a gas outlet, a thermometer pocket, a stirrer, and a jacket cooling device. A Teflon-coated iron reaction vessel was charged with 1,000 ml of pure water, and an inert gas was introduced to maintain the inside of the reaction vessel in an inert gas atmosphere. Then, a mixture of SiCl 4 and HSiCl 3 16
Flow rate from a weighing tank pressurized from 2.2 g to 426.2 g with an inert gas.
It was fed to the reaction vessel with stirring at 20 ml / powder. HC generated as the hydrolysis reaction of a silicon halide mixture progresses
Since the temperature of the reaction solution rises due to the heat of absorption of 1 in pure water, the temperature inside the container was controlled to about 57 ° C or lower. The end of the hydrolysis reaction was at the time when the produced silica gelled, and the supply of silicon halide was stopped at this time. The gel-like material was heated, dehydrated and dried to obtain high-purity silica powder. The particle size and yield of the silica powder are shown in the following table. The results are shown in the same table when the ratio of SiCl 4 / HSiCl 3 was changed.
Claims (2)
純度シリカの製造方法において、2種以上のハロゲン化
ケイ素の混合物を純水で加水分解することを特徴とする
高純度シリカの製造方法。1. A method for producing high-purity silica by hydrolyzing silicon halide with pure water, wherein a mixture of two or more kinds of silicon halide is hydrolyzed with pure water. .
l4)とトリクロルシラン(HSiCl3)の混合物であってSi
Cl4/HSiCl3の比が96/4〜80/20である請求項1に記載の
高純度シリカの製造方法。2. A silicon halide is silicon tetrachloride (SiC
a mixture of l 4 ) and trichlorosilane (HSiCl 3 )
The method for producing high-purity silica according to claim 1, wherein the ratio of Cl 4 / HSiCl 3 is 96/4 to 80/20.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29969288A JPH0829934B2 (en) | 1988-11-29 | 1988-11-29 | Method for producing high-purity silica |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29969288A JPH0829934B2 (en) | 1988-11-29 | 1988-11-29 | Method for producing high-purity silica |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02145419A JPH02145419A (en) | 1990-06-04 |
JPH0829934B2 true JPH0829934B2 (en) | 1996-03-27 |
Family
ID=17875811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29969288A Expired - Fee Related JPH0829934B2 (en) | 1988-11-29 | 1988-11-29 | Method for producing high-purity silica |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0829934B2 (en) |
-
1988
- 1988-11-29 JP JP29969288A patent/JPH0829934B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH02145419A (en) | 1990-06-04 |
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