JPH082982B2 - Method for producing plastic material for gas barrier packaging - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a plastic material for gas barrier packaging which prevents gas permeation.

[0002]

2. Description of the Related Art Although plastics materials are widely used as packaging materials, plastics for packaging materials have the drawback of having a large gas permeability. Packaging materials are strongly required to prevent gas permeation in order to protect and preserve the contents.

Various attempts have been made to prevent gas permeation. Typical examples thereof include a method of coating a plastics material with an inorganic thin film such as SiO _x or aluminum oxide, a method of forming a barrier resin layer such as polyvinylidene chloride to form a laminated body, an aluminum foil or the like. And a method of laminating the metal film of. In addition, JP-A-3-183759 discloses that a plastic film is coated with the same synthetic resin as the plastics in a thin film form by vacuum deposition or sputtering to form an organic material layer, and an inorganic material is deposited on the organic material layer to form an organic material. And a mixed film of an inorganic material and an inorganic material layer formed thereon are shown. Since this plastic is a substance that is completely different from the inorganic substance of the coating layer and has a poor affinity, the plastic is coated with the same synthetic resin, and in order to improve the fixing property of the inorganic coating, the synthetic resin and the inorganic substance are in the middle. Although the blend layer is formed, since the surface of the blend layer has not only the surface of the inorganic material but also the surface of the synthetic resin, the fixing property of the inorganic material layer is not improved as expected. Further, vapor deposition of the synthetic resin and the inorganic material in two steps cannot be applied to, for example, a molded article other than the sheet-shaped article. Further, since the synthetic resin has a reduced molecular weight when vapor-deposited, the workability of the plastics material for packaging is deteriorated. Because of this problem, it is not completely satisfactory.

All of the gas permeation blocking methods that have been attempted so far have one advantage and one disadvantage, and are not sufficiently satisfactory.

The inorganic thin film produced by the method (1) has a recyclability and no problem in terms of disposal, but the gas barrier property is insufficient. Polyvinylidene chloride produced by the method of 1) has a good gas barrier property but generates chlorine, so it has a serious problem in terms of disposal. When a metal film such as aluminum foil is laminated by the method of 1, there is no problem in disposal and the gas barrier property is good, but it becomes opaque and the contents can not be seen, and since it blocks microwaves, it can be heated in a microwave oven. Absent. The present invention provides a method of manufacturing a plastic material for gas barrier packaging which prevents gas permeation with an extremely thin layer, and solves these problems.

[0005]

Means for Solving the Problems The present invention provides "1. High-vacuum in the 10 ^-3 torr region in which an organosilicon compound monomer is made into plasma by a low temperature plasma method.
At the high-frequency electrode from the earth electrode by using the plasma
The plastics substrate is treated at a position close to the surface of the substrate to form a film of an organosilicon compound polymer having a film thickness of 0.01 to 0.07 μm on the surface, and then the film of the organosilicon compound polymer on the substrate is formed. A method for producing a plastic material for gas barrier packaging, which comprises coating a silicon oxide film on the surface. 2. A high-frequency plasma method low-temperature plasma method forming the organic silicon compound monomer and plasma, the AC plasma method, a DC plasma method is a method selected from microwave plasma method, it has been the gas barrier properties for packaging plastic material according to item 1 Production method. 3. Item 1 or 2, wherein the organosilicon compound monomer is one or more selected from vinylalkoxysilane, tetraalkoxysilane, alkyltrialkoxysilane, phenyltrialkoxysilane, polymethyldisiloxane, and polymethylcyclotetrasiloxane. For producing a gas-insulating plastics material for packaging . 4. The silicon oxide film is a film obtained by reacting a gaseous organic silicon compound on a plastic substrate by reacting it with oxygen gas, and the plastic film for gas barrier packaging according to any one of items 1 and 3. Method of manufacturing wood. 5. Production of a plastic material for gas barrier packaging according to any one of items 1 to 3, wherein the silicon oxide film is a film formed by depositing silicon oxide on the organic silicon compound film by a PVD method or a CVD method. Method. 6. 6. The method for producing a plastic material for gas barrier packaging according to item 5, wherein the silicon oxide film is a film obtained by coating a mixture of silicon monoxide and silicon dioxide by vacuum deposition. 7. The gas barrier package according to item 5, wherein the silicon oxide film is a mixture of a silicon oxide and a compound of another metal.
Manufacturing method of plastics material for wear . 8. The gas barrier according to any one of items 1 to 7, wherein the silicon oxide layer has a silicon oxide compound content of 60% or more and its composition is SiO _x (x = 1.5 to 2.0). Of manufacturing a plastic material for flexible laminated packaging . Regarding

[0006]

Silicon oxide SiO _x film was coated packaging plastics material According to the present inventor's study was not sufficient effect of having gas barrier properties.

The method for coating the packaging plastics material with silicon oxide SiO _x comprises a. PVD methods such as vacuum deposition method, ion plating method and sputtering method using SiO and SiO ₂ as raw materials, b. A plasma CVD method using monosilane (SiH ₄ ) and an oxygen-containing gas as raw materials, c. There is a plasma CVD method using an organic silicon compound such as tetraethoxysilane and an oxygen-containing gas as raw materials. However, the silicon oxide thin film provided on the packaging plastics material by these methods has an insufficient gas barrier property.

The first feature of the present invention is to form a polymer film of an organic silicon compound on a packaging plastics material by a low temperature plasma CVD method using an organic silicon compound as a raw material. Polymerization is in a high vacuum of 10 ⁻³ torr region
Below, it is performed at a position closer to the high frequency electrode than the ground electrode.
This polymer film contains at least silicon, carbon and oxygen, and the composition ratio of them is such that silicon is 15% or more and carbon is 20% or more. The thickness of the polymer film is 0.0 1 ~0.07μm. The high temperature plasma method is not preferable because the plastics substrate is affected by heat. As the low temperature plasma method, any of a high frequency plasma method, an alternating current plasma method, a direct current plasma method and a microwave plasma method can be used.

A second feature of the present invention is that a silicon oxide SiO _x film is formed on the above organic silicon compound polymer film by the PVD method or the CVD method. The thickness of the silicon oxide film is 0.03 to 0.2 μm, preferably 0.05 to 0.14 μm. The organic silicon compound polymer coating does not show gas barrier properties, but when a silicon oxide coating is formed on this film, the gas barrier properties are significantly improved. Although the silicon oxide layer is a layer made of silicon oxide, this layer may contain a metal compound other than silicon oxide, such as MgO, MgF ₂ or CuCO ₃ . However, this second layer is mainly composed of silicon oxide, which should preferably be present in an amount of 60% or more, more preferably 65% or more.

Although the scientific elucidation of why such a specific action and effect is exerted is not always sufficient, the present invention shows repeatable results. The inorganic particles supplied to the surface of the packaging plastics material by the PVD method or the CVD method move on the substrate and are stabilized at the most stable position to be fixed on the substrate.
Then, the inorganic particles are deposited on top of this to form a film. The present inventor has found that when an organic silicon compound polymer coating is present on the surface of a packaging plastics material, PVD is formed on the coating.
It is considered that since the silicon oxide fine particles supplied by the CVD method or the CVD method are well stabilized, a uniform film of stabilized silicon oxide is formed and the gas barrier property is improved. Based on this idea, the present inventor conducted research by forming an organic silicon compound polymer coating film on the surface of a packaging plastics material by various methods, but the coating film formed by the usual method was not effective. However, the thin film-like coating obtained by polymerizing the organosilicon compound monomer by using the low temperature plasma method exhibited a special effect. The silicon oxide coating provided on the thus-formed coating may be formed by coating a silicon oxide such as SiO ₂ into a thin film by a PVD method such as vacuum deposition, similar to the method of forming an organic silicon compound polymer coating. An oxygen film may be formed by introducing oxygen gas by using a different plasma CVD method.

[0011] As the packaging Plasti <br/> box material used in the method of the present invention is PET and polyester, PP, polyolefin PE such as nylon, polyvinyl alcohol, PVC, PVDC, PC or the like. The gas barrier layer formed according to the present invention does not peel off from the packaging plastics material due to handling in the distribution process or the like, but there is a risk of peeling off when molding is performed. Good effects can be obtained by treating a packaging material formed into a bag-like or bottle container to produce a packaging material having a gas barrier property. In the case of a film, a bag can be formed by laminating a synthetic resin on the gas barrier layer. Obtained by the manufacturing method of the present invention
A packaging material using a packaging plastics material is also excellent as a packaging material for retort foods because it can be sterilized in hot water.

Examples of the organic silicon compound monomer used in the present invention include vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, octamethylcyclotetrasiloxane, methyltrimethoxysilane, and methyltrimethoxysilane. Examples include ethoxysilane, 1133-tetramethyldisiloxane, and hexanemethyldisiloxane.

[0013]

EXAMPLES Next, the present invention will be specifically described with reference to examples. First, the device used will be described.

FIG. 1 shows a high frequency plasma CVD apparatus for forming an organic silicon compound film used in the present invention. The device ambient temperature liquid monomer the bell jar stainless steel with a diameter of 60cm with the inlet 1 and the oxygen gas inlet 2 for introducing a gaseous state type vacuum chamber 3 and manufactured by JEOL Ltd., a high frequency power source 4 (13.56MH _z, 1.5 kW,
JEH-01B), a matching box 5, a disc-shaped high-frequency electrode 6 having a diameter of 13 cm, a cylindrical ground electrode 7 having a diameter of 20 cm and a height of 1.5 cm, a sample jig 8 installed between the electrodes, and the like. The apparatus of FIG. 1 can perform both an organic silicon compound coating as an intermediate layer and a silicon oxide film as a gas barrier layer. As the vacuum pump, an oil rotary pump and an oil diffusion pump were used. During the pretreatment and film formation, the pump was continuously pulled to perform the pretreatment and the thin film coating test. Hexamethyldisiloxane (hereinafter referred to as HMDS) was used as the room temperature liquid monomer, and oxygen gas was used as the reaction gas. These gases are introduced into the chamber by different routes, mixed in the ground electrode and discharged into the chamber. The ground electrode and the high frequency electrode were arranged in parallel (distance 7 cm), and in each example, two kinds of plastic films were used as samples.
That is, a 100 μPET sheet or a 50 μPP film was placed between the high frequency electrode and the ground electrode (0.5 cm from the high frequency electrode) with an insulating sample jig. For the bottle-shaped sample, a PET resin container having the shape shown in FIG. 3 was used. A sample jig (not shown in the figure) was an insulating material with a rotation mechanism and was placed between the high frequency electrode and the ground electrode (the center axis of the bottle was 1.75 cm from the high frequency electrode).

FIG. 2 shows a vacuum deposition apparatus for coating a silicon oxide film which is a gas blocking layer used in the examples. This device has a diameter of 60c with two gas inlets 1 and 2.
m stainless steel bell jar type vacuum chamber 1 and manufactured by JEOL Ltd., a high frequency power source 4 (13.56MH _Z,
1.5 KW, JEH-01B), a matching box 5, a coil high-frequency electrode made of a stainless steel rod having a diameter of 5 mm and a diameter of 1.5 m, a tungsten board 7, a sample jig, and the like. As the vacuum pump, an oil rotary pump and an oil diffusion pump were used, and the pump was continuously pulled during film formation to perform a thin film coating test.

Example 1 PET sheets and PP sheets were used as the packaging plastics materials to be treated. Using the device shown in Fig. 1, the degree of vacuum in the chamber is set to 2-3 x 1 by the oil rotary pump and the oil diffusion pump.
The vacuum was evacuated to 0 ⁻⁵ torr, and HMDS vapor was introduced until the degree of vacuum in the chamber became 3 × 10 ⁻³ torr. Incident power of 300 W is introduced from a high frequency power source into the chamber through a matching box to generate HMDS plasma, and the degree of vacuum in the chamber is 1 × 10 ⁻³ t.
Adjust the amount of HMDS vapor introduced so that it becomes orr.
Hold for minutes. In this way an HMDS polymer coating was formed. After 5 minutes, the introduction of the HMDS vapor into the chamber and the introduction of the high frequency power were stopped. Then, oxygen gas is introduced into the chamber until the degree of vacuum in the chamber becomes 1 × 10 ⁻³ torr, and the degree of vacuum in the chamber becomes 2 × 10 3.
HMDS vapor was introduced into the chamber until the pressure reached ^-3 torr. Injecting 300 W of incident power from a high-frequency power source into the chamber via a matching box, HMD
HMD formed on sample (100μBOPET sheet) by generating plasma of S and oxygen and holding for 10 minutes
A silicon oxide coating was formed on the S-polymer coating.
A thin film was formed on top. The thickness of the intermediate layer was 0.036 μm, and its elemental composition was Si: O: C = 2: 3: 5. The gas barrier layer had a thickness of 0.062 μm and its elemental composition was Si: O: C = 3: 6: 1.

Example 2 PET sheets and PP sheets were used as the packaging plastics materials to be treated. The vacuum degree in the chamber is evacuated to 2 to 3 × 10 ⁻⁵ torr by the oil rotary pump and the oil diffusion pump, and the vacuum degree in the chamber is 3 × 10 ⁻³ torr.
HMDS vapor was introduced until r. Incident power of 300 W is introduced from a high frequency power source through a matching box into the chamber to generate HMDS plasma, and the amount of HMDS vapor is adjusted so that the degree of vacuum in the chamber is 1 × 10 ⁻³ torr. Hold for 5 minutes. In this way an HMDS polymer coating was formed. 5 minutes later, HMD
The introduction of S vapor into the chamber and the introduction of high-frequency power are stopped, the chamber is brought to normal pressure by the atmosphere, the sample is taken out, and 20 cm from the evaporation source of another vacuum vapor deposition apparatus of FIG.
The sample is set at a remote facing position. The degree of vacuum in the chamber is 2 to 3 x 10- with an oil rotary pump and an oil diffusion pump.
Draw a vacuum up to 5 torr, introduce oxygen gas, 3 × 1
Set to 0-4 torr. To evaporate the mixture of silicon monoxide and silicon dioxide contained in the tungsten board, a voltage was applied to both ends of the board to carry out electric resistance heating, and the HMDS polymer coating formed on the surface of the sample was vacuum-deposited on the HMDS polymer coating. _{The x} membrane was coated. The thickness of the intermediate layer is 0.04
μm, and its elemental composition is Si: O: C = 2: 3: 5.
Met. The thickness of the gas barrier layer is 0.095 μm,
The elemental composition was Si: O: C = 1: 1.8: 0.

Example 3 PET sheets and PP sheets were used as the plastic materials for packaging to be treated. Oil rotary pump and 2 to 3 × ¹⁰ the chamber vacuum by an oil diffusion pump of FIG 1 -5 tor
The vacuum degree in the chamber is 3 × 10 ⁻³
HMDS vapor was introduced until torr. Incident power of 300 W is introduced from a high frequency power source through a matching box into the chamber to generate HMDS plasma, and the amount of HMDS vapor is adjusted so that the degree of vacuum in the chamber is 1 × 10 ⁻³ torr. Hold for 5 minutes. In this way an HMDS polymer coating was formed. After 5 minutes, the introduction of the HMDS vapor into the chamber and the introduction of the high frequency power were stopped, the inside of the chamber was brought to normal pressure by the atmosphere, the sample was taken out, and the opposite side was placed 20 cm away from the evaporation source of another vacuum deposition apparatus of FIG. Set the sample in position. The degree of vacuum in the chamber is set to 2 by the oil rotary pump and the oil diffusion pump.
Vacuum is drawn up to 3 × 10 ⁻⁵ torr, and oxygen gas is introduced to make 3 × 10 ⁻⁴ torr. Incident power of 200 W is introduced from a high frequency power source into the chamber through a matching box to generate oxygen plasma. In order to evaporate the mixture of silicon monoxide and silicon dioxide contained in the tungsten board, a voltage is applied across the board to carry out electrical resistance heating, and the HMDS coating formed on the surface of the sample is coated with SiO by a high frequency ion plating method. _{The x} membrane was coated. The thickness of the intermediate layer was 0.038 μm, and its elemental composition was Si: O: C = 2: 3: 5. The gas barrier layer has a thickness of 0.084 μm and its elemental composition is S
It was i: O: C = 1: 1.8: 0.

Example 4 The bottle-shaped sample of FIG. 3 was used in place of the packaging plastic material of Example 1, and the same as in Example 1 except that the rotation speed of the bottle being coated was 10 R.s. P. Performed in M.
The bottle has a diameter of 20 mm, a bottom diameter of 25 mm, a height to the mouth portion of 47.5 mm, and a height to the shoulder portion of 30 mm.
Intermediate layer thickness: 0.044μ, elemental composition Si: O: C
= 2: 3: 5. Gas barrier layer thickness: 0.069
and the elemental composition was Si: O: C = 3: 6: 1.

Comparative Example 1 PET sheets and PP sheets were used as the packaging plastics materials to be treated. Using the device shown in Fig. 1, the degree of vacuum in the chamber is set to 2-3 x 1 by the oil rotary pump and the oil diffusion pump.
The vacuum is evacuated to 0 ⁻⁵ torr, oxygen gas is introduced into the chamber until the degree of vacuum in the chamber becomes 1 × 10 ⁻³ torr, and the degree of vacuum in the chamber is 2 × 10 ⁻³ t.
HMDS vapor was introduced into the chamber until it reached orrr. An incident power of 300 W was introduced from a high-frequency power source into the chamber through a matching box to generate HMDS and oxygen plasma, which was held for 10 minutes, and the sample (1
A thin film of HMDS polymer was formed on a 00 μBOPET sheet). The gas barrier layer had a thickness of 0.14 μm and its elemental composition was Si: O: C = 3: 6: 1.

Comparative Example 2 PET sheets and PP sheets were used as the packaging plastics materials to be treated. Using the device shown in Fig. 1, the degree of vacuum in the chamber is set to 2-3 x 1 by the oil rotary pump and the oil diffusion pump.
A vacuum was evacuated to 0 ⁻⁵ torr, and ethylene gas was introduced until the degree of vacuum in the chamber became 3 × 10 ⁻³ torr. Incident power of 300 W from a high frequency power supply is introduced into the chamber through a matching box to generate plasma of ethylene gas, and the degree of vacuum in the chamber is 1 × 10.
^The amount of ethylene gas introduced was adjusted to ⁻³ torr and held for 5 minutes. Thus an ethylene polymer coating was formed. After 5 minutes, the introduction of ethylene gas into the chamber and the introduction of high-frequency power were stopped. Then, oxygen gas is introduced into the chamber until the degree of vacuum in the chamber becomes 1 × 10 ⁻³ torr, and the degree of vacuum in the chamber becomes 2 ×.
HMDS vapor was introduced into the chamber until it reached 10 ⁻³ torr. Injecting 300 W of incident power from a high frequency power source into the chamber via a matching box,
A plasma of MDS and oxygen was generated and held for 10 minutes to form a thin film on the sample (100 μBOPET sheet). The thickness of the intermediate layer was 0.047 μm, and its elemental composition was Si: O: C = 0: 1: 4. The gas barrier layer has a thickness of 0.069 μm and its elemental composition is Si:
It was O: C = 3: 6: 1.

Comparative Example 3 PET sheets and PP sheets were used as the packaging plastics materials to be treated. A sample (unprocessed 100 μP P) was placed at a facing position 20 cm away from the evaporation source of the vacuum evaporation apparatus of FIG.
ET sheet). The degree of vacuum in the chamber is set to 2 to 3 × 10 ⁻⁵ torr by an oil rotary pump and an oil diffusion pump.
evacuated to r, introduced oxygen gas, and 3 × 10 ⁻⁴ t
orr. In order to evaporate the mixture of silicon monoxide and silicon dioxide contained in the tungsten board, a voltage was applied to both ends of the board to perform electric resistance heating, and the sample was coated with a SiO _x film by a vacuum evaporation method. The gas barrier layer has a thickness of 0.14 μm and its elemental composition is Si: O: C =
It was 1: 1.8: 0.

Comparative Example 4 PET sheets and PP sheets were used as the packaging plastics materials to be treated. Using the device shown in Fig. 1, the degree of vacuum in the chamber is set to 2-3 x 1 by the oil rotary pump and the oil diffusion pump.
A vacuum was evacuated to 0 ⁻⁵ torr, and ethylene gas was introduced until the degree of vacuum in the chamber became 3 × 10 ⁻³ torr. Incident power of 300 W from a high frequency power supply is introduced into the chamber through a matching box to generate plasma of ethylene gas, and the degree of vacuum in the chamber is 1 × 10.
^The amount of ethylene gas introduced was adjusted to ^-3 torr and held for 5 minutes. After 5 minutes, the introduction of ethylene gas into the chamber and the introduction of high-frequency power were stopped, the inside of the chamber was brought to normal pressure by the atmosphere, the sample was taken out, and 20 cm away from the evaporation source of another vacuum vapor deposition device (device 2) Set the sample at the opposite position. The vacuum degree in the chamber was evacuated to 2 to 3 × 10 ⁻⁵ torr by an oil rotary pump and an oil diffusion pump, oxygen gas was introduced, and 3 × 10 ⁻⁴ torr was introduced.
to r. In order to evaporate the mixture of silicon monoxide and silicon dioxide contained in the tungsten board, a voltage was applied to both ends of the board to perform electric resistance heating, and the treated surface of the sample was coated with a SiO _x film by a vacuum deposition method. The thickness of the intermediate layer is 0.041 μm, and its elemental composition is Si: O: C =
It was 0: 1: 4. The thickness of the gas barrier layer is 0.13 μm
And its elemental composition is Si: O: C = 1: 1.8: 0.
Met.

Comparative Example 5 PET sheets and PP sheets were used as the packaging plastics materials to be treated. Using the apparatus of FIG. 1, the sample is set at a facing position 20 cm away from the evaporation source of the vacuum vapor deposition apparatus (apparatus 2). The degree of vacuum in the chamber is evacuated to 2 to 3 × 10 ⁻⁵ torr by an oil rotary pump and an oil diffusion pump, and oxygen gas is introduced to 3 × 10 ⁻⁴ torr. Incident power of 200 W is introduced from a high frequency power source into the chamber through a matching box to generate oxygen plasma. To evaporate the mixture of silicon monoxide and silicon dioxide contained in the tungsten board, a voltage was applied to both ends of the board to perform electric resistance heating, and the treated surface of the sample was coated with the SiO _x film by the high frequency ion plating method. The gas barrier layer had a thickness of 0.09 μm and its elemental composition was Si: O: C = 1: 1.8: 0. Measuring apparatus Oxygen gas permeation amount: Modern Control Co., ox-tran 100 Measurement condition: 27 ° C. (Permeation amount unit: cc / m ² day atm) Water vapor permeation amount: Lyssy Co., Automatic Permeability Tester L8 0-4000 Measurement condition : 40 ° C. 90% RH (permeation amount unit: g / m ² day)

[Performance Test] Table 1 shows the results of the gas permeation performance test of the sheets obtained in Examples and Comparative Examples. Test method Water vapor transmission rate measurement method Fill a bottle with 2 g of water, heat seal with the PET surface of the aluminum foil / PET laminate facing the bottle side, and heat seal at 50 ° C.
The sample was stored in a 40% RH atmosphere and the weight change was measured. The permeation area of the used bottle is 50 cm ² . As a result of the amount of water vapor permeation, the untreated bottle was 3.8 g / m ² day,
The working bottle was 0.3 g / m ² day.

[0026]

[Table 1] (Note) In the examples and comparative examples, PET other than PET was used as a sample.
The results using P are also shown.

[0027]

According to the present invention, a very thin silicon oxide film stably fixed on the surface of a packaging plastic material can be easily formed. Since this membrane can prevent gas permeation and is thin, there is no problem in recycling and disposal.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a high frequency plasma CVD apparatus used in the present invention.

FIG. 2 is an explanatory diagram of a vacuum vapor deposition device that coats a silicon oxide film.

FIG. 3 is a side view of the bottle used in the present invention.

[Explanation of symbols]

 1 gas introduction port 2 gas introduction port 3 vacuum chamber 4 high frequency power supply 5 matching box 6 high frequency electrode 7 ground electrode 8 sample jig

Claims (8)

[Claims] 1. An organosilicon compound monomer is formed into plasma by a low-temperature plasma method, and the plasma is in the range of 10 ⁻³ torr.
Higher frequency than the earth electrode using the plasma in high vacuum
The plastic substrate is processed at a position close to the wave electrode, and the film thickness of the organic silicon compound polymer is 0.01 to 0.07 on the surface.
A method for producing a plastic material for gas barrier packaging , which comprises forming a film of μm and then coating a silicon oxide film on the film of the organic silicon compound polymer of the substrate. 2. The gas barrier property according to claim 1, wherein the low temperature plasma method using an organic silicon compound monomer as plasma is a method selected from a high frequency plasma method, an alternating current plasma method, a direct current plasma method and a microwave plasma method. Method for manufacturing plastics material for packaging . 3. The organosilicon compound monomer is vinylalkoxysilane, tetraalkoxysilane, alkyltrialkoxysilane, phenyltrialkoxysilane,
The method for producing a plastic material for gas barrier packaging according to claim 1 or 2, which is 1 or 2 or more selected from polymethyldisiloxane and polymethylcyclotetrasiloxane. 4. The gas barrier according to claim 1, wherein the silicon oxide film is a film formed by reacting a gaseous organic silicon compound on a plastics substrate by reacting it with oxygen gas. Of manufacturing plastics material for flexible packaging . 5. The silicon oxide film contains silicon oxide as P
The method for producing a plastic material for gas barrier packaging according to any one of claims 1 to 3, which is a film formed on an organic silicon compound film by a VD method or a CVD method. 6. The method of producing a plastic material for gas barrier packaging according to claim 5, wherein the silicon oxide film is a film obtained by coating a mixture of silicon monoxide and silicon dioxide by vacuum vapor deposition. . 7. The method for producing a plastic material for gas barrier packaging according to claim 5, wherein the silicon oxide film is a mixture of a silicon oxide and a compound of another metal. 8. The silicon oxide layer comprises a silicon oxide compound of 6.
0% or more, and the composition is SiO _x (x = 1.5 to
2.0) The method for producing a plastic material for gas barrier laminate packaging according to any one of claims 1 to 7, which is 2.0).