JPH08292220A - Device for evaluating destaticizing property and evaluation substrate therefor - Google Patents

Device for evaluating destaticizing property and evaluation substrate therefor

Info

Publication number
JPH08292220A
JPH08292220A JP9710695A JP9710695A JPH08292220A JP H08292220 A JPH08292220 A JP H08292220A JP 9710695 A JP9710695 A JP 9710695A JP 9710695 A JP9710695 A JP 9710695A JP H08292220 A JPH08292220 A JP H08292220A
Authority
JP
Japan
Prior art keywords
evaluation
electrode
substrate
charging
static elimination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9710695A
Other languages
Japanese (ja)
Inventor
Isao Tani
功 谷
Takayuki Oishi
貴之 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Display Inc
Original Assignee
Advanced Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Display Inc filed Critical Advanced Display Inc
Priority to JP9710695A priority Critical patent/JPH08292220A/en
Publication of JPH08292220A publication Critical patent/JPH08292220A/en
Pending legal-status Critical Current

Links

Landscapes

  • Testing Electric Properties And Detecting Electric Faults (AREA)

Abstract

PURPOSE: To provide a device for evaluating destaticizing property and evaluation substrate therefor by which a destaticizer prepared in the production line for liquid crystal display element or semiconductor element, etc., can be evaluated in real line concerning its performance in the same manner as actually produced parts. CONSTITUTION: The title device consists of an evaluation susbstrate 1 for evaluating destaticizing property in which a charging electrode 3 is prepared on one surface of a dielectric substrate 2 and a grounding electrode 4 connecting with an earth on the other surface thereof respectively, a high-voltage power supply 8 for charging the electrode 3 on the substrate 1, and a surface electrometer 9 for measuring the surface electric potential of the electrode 3 which is charged by the power supply 8.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は除電特性評価装置に関す
る。さらに詳しくは、半導体素子または液晶表示素子な
どの製造工程において、基板に発生する静電気による帯
電電荷を除電するためのイオン発生装置の性能を評価す
る除電特性評価装置およびそれに用いる評価基板に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a static elimination characteristic evaluation device. More specifically, the present invention relates to a static elimination characteristic evaluation device for evaluating the performance of an ion generator for eliminating static charge generated on a substrate in a manufacturing process of a semiconductor element or a liquid crystal display element, and an evaluation substrate used for the same.

【0002】[0002]

【従来の技術】たとえば液晶表示素子は、ガラスなどの
絶縁性基板表面に行われる成膜やパターニングなどの工
程を複数回繰り返して製造される。この製造工程におい
て、たとえば純水洗浄、乾燥、レジスト塗布、露光、現
像、エッチング、レジスト除去などの多くの処理が施さ
れるが、この間、摩擦、剥離などによる静電気が発生し
やすく、発生した静電気は絶縁性基板表面に帯電する。
特にラビング工程では摩擦による静電気が発生し易い。
この静電気が放電すると絶縁性基板表面に形成されてい
る電極パターンやスイッチング素子などが損傷をうけ、
製造歩留りを低下させる原因となっている。
2. Description of the Related Art A liquid crystal display device, for example, is manufactured by repeating a plurality of steps such as film formation and patterning performed on the surface of an insulating substrate such as glass. In this manufacturing process, many processes such as deionized water washing, drying, resist coating, exposure, development, etching, and resist removal are performed. During this period, static electricity is liable to be generated due to friction, peeling, etc. Charges the surface of the insulating substrate.
Especially in the rubbing process, static electricity is easily generated due to friction.
When this static electricity is discharged, the electrode patterns and switching elements formed on the surface of the insulating substrate are damaged,
This is a cause of lowering manufacturing yield.

【0003】このため、静電気を除電するために、一般
に液晶表示素子または半導体素子の製造装置または搬送
装置に除電装置を設置し、除電装置内でコロナ放電によ
って発生したイオンを絶縁性基板などに吹きつけて、帯
電した電荷と中和する除電方法が採用されている。
Therefore, in order to eliminate static electricity, a static eliminator is generally installed in a liquid crystal display element or semiconductor element manufacturing apparatus or a carrier, and ions generated by corona discharge in the static eliminator are blown to an insulating substrate or the like. A neutralization method is used to neutralize the charged electric charge.

【0004】前述のような除電装置および除電効果の判
定方法に関しては、特開平2−231578号公報や日
本電子部品信頼性センターが平成5年3月に規定した
「静電気に敏感なデバイスおよび装置の取扱いに関する
ガイドライン」などに示されており、帯電プレートモニ
ターを用いて、帯電したプレートの表面電位を測定しな
がら、一定量に帯電させたプレート上の電位が除電によ
りどういう割合で減少するかを調べることにより除電装
置の評価をしている。帯電プレートモニターの構成は特
開平2−231578号公報には具体的なものが示され
ていないが前記ガイドラインに示されているものと同等
なものと考えられる。そのガイドラインに基づく除電装
置の性能評価に用いられている帯電プレートモニター
(除電特性評価装置)の構成図を図5に示す。
Regarding the static eliminator and the method of determining the static erasing effect as described above, "Electrostatic Sensitive Devices and Apparatuses" stipulated in Japanese Patent Application Laid-Open No. 2-231578 and Japanese Electronic Components Reliability Center were established in March 1993. See "Handling Guidelines" and measure the surface potential of a charged plate using a charged plate monitor, and investigate at what rate the potential on a plate charged to a certain amount decreases due to static elimination. Therefore, the static eliminator is evaluated. Although the specific structure of the charging plate monitor is not shown in Japanese Patent Laid-Open No. 2-231578, it is considered to be equivalent to that shown in the above guidelines. FIG. 5 shows a configuration diagram of a charged plate monitor (static elimination characteristic evaluation device) used for performance evaluation of the static elimination device based on the guidelines.

【0005】図5に示されるように、従来の除電特性評
価装置は、高圧電極板13が接地電極板14上に絶縁体
12を介して一定間隙を有するように設けられ、該高圧
電極板13の表面の電位を測定できるように、高圧電極
板13上にプローブ9aを有する表面電位計9と高圧電
極板13に電荷を帯電させる高電圧電源8およびスイッ
チ7とからなっている。なお、10は時間測定用のタイ
マである。
As shown in FIG. 5, in the conventional static elimination characteristic evaluation apparatus, the high voltage electrode plate 13 is provided on the ground electrode plate 14 so as to have a constant gap through the insulator 12, and the high voltage electrode plate 13 is provided. A surface electrometer 9 having a probe 9a on the high-voltage electrode plate 13, a high-voltage power source 8 for charging the high-voltage electrode plate 13 with electric charges, and a switch 7 so that the surface potential of the high-voltage electrode plate 13 can be measured. In addition, 10 is a timer for measuring time.

【0006】この装置で、スイッチ7をオンにして一定
の電荷量を高圧電極板13に帯電させ、スイッチ7をオ
フにする。つぎに高圧電極板13の表面電位を測定し、
除電装置(図示せず)によりイオンを吹きつけ、その後
定期的に高圧電極板13の表面電位を表面電位計9で測
定する。そして、たとえば初めに帯電させた所定の電位
の1/10まで減衰するまでの時間を測定して、減衰す
る時間の長さで除電特性を評価する。また、減衰させる
時間を設定し、その所定時間内で高圧電極板の電位がそ
の装置での最低になるように除電装置からのイオン発生
量を制御することにより、除電装置の性能の最適化を行
う方法が採用されている。
In this apparatus, the switch 7 is turned on to charge the high-voltage electrode plate 13 with a certain amount of charge, and the switch 7 is turned off. Next, the surface potential of the high voltage electrode plate 13 is measured,
Ions are blown by a static eliminator (not shown), and then the surface potential of the high-voltage electrode plate 13 is periodically measured by the surface electrometer 9. Then, for example, the time until it decays to 1/10 of the initially charged predetermined potential is measured, and the static elimination characteristic is evaluated by the length of the decay time. Also, by optimizing the performance of the static eliminator, by setting the time to decay and controlling the amount of ions generated from the static eliminator so that the potential of the high-voltage electrode plate becomes the lowest in that device within the predetermined time. The method of doing is adopted.

【0007】[0007]

【発明が解決しようとする課題】前記従来の除電装置の
性能の評価装置では、高圧電極板13と接地電極板14
からなる帯電プレートの寸法が大きく、たとえばヒュー
グルエレクトロニクス株式会社製の静電モニターMOD
EL−700で、幅207mm、奥行220mm、高さ
143mmの大きさになり、液晶表示素子の製造装置ま
たは搬送装置の実ラインに設けられた除電装置の性能を
評価しようとする場合、帯電プレートの高さ寸法が高い
ため、実際の液晶表示素子用の絶縁基板と同様の評価を
することができないという問題がある。
In the conventional apparatus for evaluating the performance of the static eliminator, the high voltage electrode plate 13 and the ground electrode plate 14 are used.
The size of the charging plate is made of, for example, an electrostatic monitor MOD manufactured by Hugle Electronics Co., Ltd.
The EL-700 has a width of 207 mm, a depth of 220 mm, and a height of 143 mm, and when evaluating the performance of a static eliminator provided in a real line of a liquid crystal display device manufacturing apparatus or a transporting apparatus, the charging plate Since the height dimension is high, there is a problem that the same evaluation as that of an actual insulating substrate for a liquid crystal display element cannot be performed.

【0008】すなわち、除電装置の電極で発生したイオ
ン濃度は、除電装置の電極からの距離および/または発
生してからの時間の関数として変化する。このため、除
電装置の性能評価は実ラインでのガラス基板表面と除電
装置の電極との間の距離のときに最適な除電性能になる
ように除電装置の電極で発生するイオン濃度を制御する
必要がある。しかし、前述の静電モニターでは、高さが
143mmもあり、液晶表示素子を形成するガラス基板
の厚さ0.7〜1.1mmに比べて非常に大きい。した
がって、実ラインにおける除電装置の電極とガラス基板
表面との距離に比べて、帯電プレートモニターを設置し
たときの除電装置の電極と除電特性評価装置の高圧電極
板との距離が非常に短い状態で評価することになり、実
ラインにおける除電装置の性能評価を正確に行うことが
できない。
That is, the concentration of ions generated at the electrodes of the static eliminator changes as a function of the distance from the electrodes of the static eliminator and / or the time since the generation. For this reason, in the performance evaluation of the static eliminator, it is necessary to control the ion concentration generated in the electrode of the static eliminator so that the optimum static eliminator performance is obtained at the distance between the glass substrate surface and the electrode of the static eliminator in the actual line. There is. However, the above-mentioned electrostatic monitor has a height of 143 mm, which is much larger than the thickness of the glass substrate forming the liquid crystal display element, which is 0.7 to 1.1 mm. Therefore, compared with the distance between the electrode of the static eliminator and the glass substrate surface in the actual line, the distance between the electrode of the static eliminator and the high voltage electrode plate of the static eliminator characteristic evaluation device when the charging plate monitor is installed is very short. Therefore, the performance of the static eliminator in the actual line cannot be accurately evaluated.

【0009】本発明はこのような問題を解決するために
なされたもので、液晶表示素子や半導体素子の製造ライ
ンに設けられた除電装置の性能評価を実ラインで実際の
製造部品の場合と同様に性能評価をすることができる除
電特性評価装置およびそれに用いる評価基板を提供する
ことを目的とする。
The present invention has been made to solve such a problem, and the performance evaluation of the static eliminator provided in the manufacturing line of the liquid crystal display element or the semiconductor element is performed in the actual line as in the case of the actual manufacturing part. It is an object of the present invention to provide a static elimination characteristic evaluation device capable of performing performance evaluation and an evaluation board used for the same.

【0010】[0010]

【課題を解決するための手段】本発明の除電特性評価装
置は、誘電体基板の一方の面に電荷が帯電される帯電電
極が設けられ他方の面にアースに接続される接地電極が
設けられた除電特性評価用の評価基板と、該評価基板の
前記帯電電極に電荷を帯電させるための高電圧電源と、
該高電圧電源により帯電された前記帯電電極の表面電位
を計測する表面電位計とからなっている。
According to another aspect of the present invention, there is provided a static elimination characteristic evaluation apparatus according to the present invention, wherein a dielectric electrode is provided on one surface thereof with a charging electrode for charging, and the other surface thereof is provided with a ground electrode connected to ground. And a high-voltage power supply for charging the charging electrodes of the evaluation substrate with an evaluation substrate for static elimination characteristics evaluation,
And a surface electrometer for measuring the surface potential of the charging electrode charged by the high-voltage power supply.

【0011】本発明の除電特性評価用の評価基板は、誘
電体基板の一方の面に電荷が帯電される帯電電極が設け
られ、他方の面にアースに接続される接地電極が設けら
れている。
In the evaluation substrate for evaluating the static elimination characteristics of the present invention, the dielectric substrate is provided with a charging electrode on one surface thereof to be charged with electric charges, and the other surface thereof is provided with a ground electrode connected to ground. .

【0012】前記誘電体基板が実際に除電される絶縁性
基板と同じ材質で同じ厚さに形成されていることが、実
際のラインと同様に評価することができるため好まし
い。
It is preferable that the dielectric substrate is made of the same material and has the same thickness as that of the insulating substrate that is actually subjected to static elimination because it can be evaluated in the same manner as an actual line.

【0013】前記帯電電極および/または前記接地電極
が薄膜で形成されていることが、特に電極板を貼りつけ
なくてもスパッタや蒸着などで簡単に形成することがで
きるため好ましい。
It is preferable that the charging electrode and / or the ground electrode is formed of a thin film because it can be easily formed by sputtering or vapor deposition without attaching an electrode plate.

【0014】前記帯電電極が前記誘電体基板を介した前
記接地電極との間に20±2pFの静電容量となるよう
な大きさに形成されていることが、実ラインと同じ材料
の誘電体基板を使用しても一般の規格に合わせた評価を
することができるため好ましい。
A dielectric made of the same material as the actual line is that the charging electrode is formed to have a capacitance of 20 ± 2 pF between the charging electrode and the ground electrode via the dielectric substrate. Even if a substrate is used, the evaluation can be performed in accordance with general standards, which is preferable.

【0015】前記帯電電極が前記誘電体基板の一方に複
数個独立して設けられていることが、基板上で帯電する
電荷分布を異ならせることができ、また、除電効果の基
板上の分布を評価できるため好ましい。
Since a plurality of the charging electrodes are independently provided on one of the dielectric substrates, the distribution of charges charged on the substrate can be different, and the distribution of the static elimination effect on the substrate can be changed. It is preferable because it can be evaluated.

【0016】[0016]

【作用】本発明の除電特性評価装置によれば、評価基板
が製造している液晶表示素子などの基板と同じ厚さにす
ることができるので、除電装置の電極と基板表面との距
離を同じにすることができ、液晶表示素子などの製造装
置または搬送装置の実ラインで同じ状態により除電装置
の除電特性の性能評価をすることができる。
According to the static elimination characteristic evaluation apparatus of the present invention, since the evaluation substrate can be made to have the same thickness as the substrate such as a liquid crystal display element manufactured, the distance between the electrode of the static elimination apparatus and the substrate surface is the same. Therefore, the performance evaluation of the static elimination characteristics of the static eliminator can be performed in the same state on the actual line of the manufacturing apparatus for the liquid crystal display element or the like or the transporting apparatus.

【0017】また、本発明の評価基板によれば、誘電体
基板の一方の面に電荷帯電用の電極が設けられ、他方の
面に接地電極が設けられているため、簡単に評価用の電
荷を帯電することができるとともに、表面電位を簡単に
測定することができる。
Further, according to the evaluation board of the present invention, since the charge charging electrode is provided on one surface of the dielectric substrate and the ground electrode is provided on the other surface, the evaluation charge can be easily obtained. Can be charged and the surface potential can be easily measured.

【0018】さらに、帯電用電極を複数個設けることに
より、基板上の複数箇所に独立して異なる量の電荷を帯
電させることができ、実際の静電気帯電の分布と同じよ
うに帯電させて除電性能の評価をすることができる。
Furthermore, by providing a plurality of charging electrodes, it is possible to independently charge different amounts of electric charge at a plurality of locations on the substrate, and to perform charging in the same manner as in the actual electrostatic charge distribution, and to eliminate static electricity. Can be evaluated.

【0019】[0019]

【実施例】つぎに添付図面を参照しつつ本発明の除電特
性評価装置およびそれに用いる評価基板を説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a static elimination characteristic evaluation apparatus of the present invention and an evaluation board used for the same will be described with reference to the accompanying drawings.

【0020】実施例1 図1は本発明の除電特性評価用の評価基板の一実施例の
断面説明図、図2は液晶表示素子の製造工程における搬
送装置の除電装置部に、本発明の評価基板を載置し、除
電装置の除電特性評価を行う除電特性評価装置の一実施
例の構成図である。
Example 1 FIG. 1 is a sectional explanatory view of an example of an evaluation substrate for evaluating static elimination characteristics of the present invention, and FIG. 2 shows evaluation of the present invention in a static elimination unit of a carrier in a manufacturing process of a liquid crystal display element. It is a block diagram of one Example of the static elimination characteristic evaluation apparatus which mounts a board | substrate and performs static elimination characteristic evaluation of a static elimination apparatus.

【0021】本実施例の除電特性評価用の評価基板1
は、誘電体基板2の一方の面に電荷が帯電される帯電電
極3と他方の面にアースに接続される接地電極4とが設
けられて構成されている。誘電体基板2には厚さ1mm
のフェノール樹脂積層板を用いた。その大きさは液晶表
示素子を形成するガラス基板の大きさと同じである。帯
電電極3および接地電極4にはそれぞれ厚さが0.05
mmのステンレス箔を用い、その大きさは誘電体基板2
の周囲4辺でそれぞれ誘電体基板2より10mm程度短
かい寸法とした。誘電体基板2と帯電電極3あるいは接
地電極4との間は合成樹脂製接着剤で接着して固定し
た。このように構成した評価基板1の厚さは1.1mm
で、液晶表示素子製造用のガラス基板の厚さ0.7〜
1.1mmとほとんど同じ厚さである。
Evaluation board 1 for evaluating static elimination characteristics of this embodiment
Of the dielectric substrate 2 is provided with a charging electrode 3 on one surface of which the electric charge is charged and a ground electrode 4 connected to the ground on the other surface. The dielectric substrate 2 has a thickness of 1 mm
The phenol resin laminated board of was used. The size is the same as the size of the glass substrate forming the liquid crystal display element. Each of the charging electrode 3 and the ground electrode 4 has a thickness of 0.05.
mm stainless steel foil, the size of which is the dielectric substrate 2
Each of the four sides of the above is set to be about 10 mm shorter than the dielectric substrate 2. The dielectric substrate 2 and the charging electrode 3 or the ground electrode 4 were bonded and fixed with a synthetic resin adhesive. The thickness of the evaluation substrate 1 thus configured is 1.1 mm.
And the thickness of the glass substrate for manufacturing the liquid crystal display element is 0.7 to
It has almost the same thickness as 1.1 mm.

【0022】図2において、5はコロナ放電によってイ
オンを発生させ、そのイオンを帯電電極3に吹きつけて
中和する除電装置、6は、高電圧電源8の端子で、スイ
ッチ7を介して高電圧電源8と接続され、スイッチ7を
投入することにより、端子6を通じて評価基板1の帯電
電極3をあらかじめ所定の電位に帯電させる。この所定
の電位への帯電の制御は非接触型の表面電位計9でプロ
ーブ9aを通じて帯電電極3の表面電位を計測しながら
調整する。なお、高電圧電源8はたとえば1000〜5
000V程度の電圧を供給する。
In FIG. 2, numeral 5 is a static eliminator for generating ions by corona discharge and spraying the ions to the charging electrode 3 for neutralization, and numeral 6 is a terminal of a high voltage power source 8 and a high voltage via a switch 7. It is connected to the voltage power supply 8 and the switch 7 is turned on to precharge the charging electrode 3 of the evaluation substrate 1 to a predetermined potential through the terminal 6. The control of the charging to the predetermined potential is adjusted by measuring the surface potential of the charging electrode 3 through the probe 9a by the non-contact type surface electrometer 9. The high voltage power source 8 is, for example, 1000-5.
A voltage of about 000V is supplied.

【0023】図2に示されるように、液晶表示素子製造
工程の搬送装置11に評価基板1を載置して搬送させ、
除電装置5の下で、まず前述のように、帯電電極3を所
定の電位になるように帯電させる。ついで除電装置5の
電源を投入してイオンを発生させ、当該イオンを評価基
板1の帯電電極3の表面に吹きつける。さらに、スイッ
チ7を切断して、この時点から帯電電極3の電位が初期
電位の1/10に減衰するまでの時間を測定する。
As shown in FIG. 2, the evaluation substrate 1 is placed and conveyed on the conveying device 11 in the liquid crystal display element manufacturing process.
Under the static eliminator 5, first, as described above, the charging electrode 3 is charged to a predetermined potential. Then, the static eliminator 5 is turned on to generate ions, and the ions are sprayed on the surface of the charging electrode 3 of the evaluation substrate 1. Further, the switch 7 is cut off, and the time from this point until the potential of the charging electrode 3 decays to 1/10 of the initial potential is measured.

【0024】また、帯電電極3を所定の電位に帯電させ
たあと、スイッチ7を切断し、所定の時間内に帯電電極
3の電位がその装置での最低になるように除電装置5か
らのイオン発生量を制御し、当該除電装置5の性能の最
適な点を求める。
Further, after the charging electrode 3 is charged to a predetermined potential, the switch 7 is cut off, and the ion from the static eliminator 5 is set so that the potential of the charging electrode 3 becomes the lowest in the device within a predetermined time. The generated amount is controlled to find the optimum point of the performance of the static eliminator 5.

【0025】本実施例1によれば評価基板1として誘電
体基板2の両面にそれぞれ帯電電極3と接地電極4を設
けたものを用いているので、評価基板1を実際の液晶表
示素子用のガラス基板と同程度の厚さとすることがで
き、除電装置の電極からの距離はガラス基板の場合と同
じになり、従来例では評価できなかった実ラインにおけ
る除電装置の性能評価が可能となった。
According to the first embodiment, since the evaluation substrate 1 having the charging electrode 3 and the ground electrode 4 provided on both surfaces of the dielectric substrate 2 is used, the evaluation substrate 1 is used for an actual liquid crystal display device. The thickness of the glass substrate can be made to be about the same, and the distance from the electrodes of the static eliminator is the same as that of the glass substrate, enabling performance evaluation of the static eliminator in the actual line that could not be evaluated in the conventional example. .

【0026】実施例2 つぎに、本発明の評価基板の第2の実施例について説明
する。評価基板1の構成は図1に示した実施例1の場合
と同じであるが、本実施例2では誘電体基板2として液
晶表示素子を製造する場合に用いるガラス基板と同じガ
ラス基板で構成したものである。
Example 2 Next, a second example of the evaluation substrate of the present invention will be described. The structure of the evaluation substrate 1 is the same as that of the first embodiment shown in FIG. 1, but in this second embodiment, the dielectric substrate 2 is made of the same glass substrate as the glass substrate used when manufacturing the liquid crystal display element. It is a thing.

【0027】除電装置5の除電特性評価方法は実施例1
と同様であり、効果も同様である。ただし、実施例2で
は誘電体基板2に液晶表示素子を形成する材料であるガ
ラス基板を用いているので、帯電電極3と接地電極4と
の間での漏洩電流が実ラインとほぼ同じとなり、一層実
ラインと同等の除電特性を評価できる効果がある。
The method of evaluating the static elimination characteristics of the static eliminator 5 is the first embodiment.
And the effect is the same. However, since the glass substrate, which is a material for forming the liquid crystal display element, is used for the dielectric substrate 2 in the second embodiment, the leakage current between the charging electrode 3 and the ground electrode 4 becomes almost the same as the actual line, There is an effect that the static elimination characteristics equivalent to those of the actual line can be evaluated.

【0028】なお、除電すべき基板がガラス基板以外
の、たとえば半導体基板上に絶縁膜が設けられたもので
ある場合は、評価基板の誘電体基板としては同じ半導体
基板に絶縁膜が設けられたものを使用することが一層正
確な評価をできるため好ましい。
When the substrate to be discharged is other than the glass substrate, for example, an insulating film is provided on the semiconductor substrate, the insulating film is provided on the same semiconductor substrate as the dielectric substrate of the evaluation substrate. It is preferable to use one because more accurate evaluation can be performed.

【0029】実施例3 つぎに本発明の評価基板の第3の実施例について説明す
る。評価基板1の構成は図1に示した実施例1の場合と
同様であるが、本実施例3では誘電体基板2の表面およ
び裏面にスパッタ法または蒸着により金属薄膜(クロ
ム、アルミニウムなど)を0.3〜1μm程度の厚さで
被着し、それぞれ帯電電極3と接地電極4を形成したも
のである。除電装置5の除電特性評価方法は実施例1と
同様であり、効果も同様である。
Example 3 Next, a third example of the evaluation substrate of the present invention will be described. The structure of the evaluation substrate 1 is the same as that of the first embodiment shown in FIG. 1, but in the third embodiment, metal thin films (chrome, aluminum, etc.) are formed on the front and back surfaces of the dielectric substrate 2 by sputtering or vapor deposition. The charging electrode 3 and the ground electrode 4 are formed by depositing a thickness of about 0.3 to 1 μm. The method of evaluating the static elimination characteristics of the static eliminator 5 is the same as that of the first embodiment, and the effects are also the same.

【0030】本実施例3によれば液晶表示素子などの製
造装置で容易に電極3、4を形成することができ、電極
板を貼り合わせる必要がなく、また0.3〜1.0μm
程度の薄い電極を形成することができ、安価で薄い評価
基板1を形成できる。
According to the third embodiment, the electrodes 3 and 4 can be easily formed by a manufacturing apparatus for a liquid crystal display device or the like, there is no need to attach electrode plates, and the thickness is 0.3 to 1.0 μm.
It is possible to form a thin electrode, and it is possible to form a thin evaluation substrate 1 at a low cost.

【0031】さらに、誘電体基板2にガラス基板を使用
し、金属薄膜で帯電電極3および接地電極4を形成すれ
ば、一層実ラインと同等の除電特性を評価できる効果が
ある。
Furthermore, if a glass substrate is used as the dielectric substrate 2 and the charging electrode 3 and the ground electrode 4 are formed of a metal thin film, there is an effect that the static elimination characteristics equivalent to those of the actual line can be evaluated.

【0032】実施例4 図3は本発明の評価基板1の第4の実施例の断面説明図
である。
Embodiment 4 FIG. 3 is a cross sectional view showing a fourth embodiment of the evaluation board 1 of the present invention.

【0033】図3において、誘電体基板2と接地電極4
は実施例1の場合と同様であるが、本実施例では帯電電
極3の大きさが帯電電極3と接地電極4との間の静電容
量が20pF程度になるように形成し、誘電体基板2の
中央部に設けられているものである。誘電体基板2とし
て厚さが1.1mmのガラス基板を使用した場合、当該
ガラス基板の比誘電率εrを6.5とすると、単位面積
当りの静電容量は真空の誘電率をεo、ガラス基板の厚
さをdとしてεo・εr/dで求められるため、約5pF
/cm2となる。したがって、前述の20pFの静電容
量にするためには帯電電極の面積を4cm2にすればよ
い。除電装置5の除電特性評価方法は実施例1と同様で
あり、効果も同様である。
In FIG. 3, the dielectric substrate 2 and the ground electrode 4 are
Is the same as that of the first embodiment, but in this embodiment, the size of the charging electrode 3 is formed so that the electrostatic capacitance between the charging electrode 3 and the ground electrode 4 is about 20 pF, and the dielectric substrate is formed. It is provided at the center of 2. When a glass substrate having a thickness of 1.1 mm is used as the dielectric substrate 2, if the relative permittivity ε r of the glass substrate is 6.5, the electrostatic capacitance per unit area is ε o in vacuum. , Ε o · ε r / d, where d is the thickness of the glass substrate.
/ Cm 2 . Therefore, the area of the charging electrode may be set to 4 cm 2 in order to obtain the above-mentioned capacitance of 20 pF. The method of evaluating the static elimination characteristics of the static eliminator 5 is the same as that of the first embodiment, and the effects are also the same.

【0034】本実施例4では、前記した「静電気に敏感
なデバイスおよび装置の取扱いに関するガイドライン」
に規定されている誘電体部分の静電容量が20pF±2
pFであることから、ガイドラインに沿った基準で除電
特性を評価することができる。このように本発明によれ
ば、ガイドラインに沿った特性評価でも容易に実施する
ことができる。
In the fourth embodiment, the above-mentioned "guidelines for handling static-sensitive devices and apparatuses" are mentioned.
The capacitance of the dielectric part specified in paragraph 20pF ± 2
Since it is pF, it is possible to evaluate the static elimination characteristics on the basis of a guideline. As described above, according to the present invention, the characteristic evaluation according to the guideline can be easily performed.

【0035】実施例5 図4は本発明の評価基板の第5の実施例の正面説明図で
ある。本実施例5において、誘電体基板2と接地電極4
は実施例1の場合と同様であるが、誘電体基板2の静電
容量が20pFになる面積の帯電電極3を9個配置して
構成したものである。除電装置5の除電特性評価方法は
実施例1と同様であり、効果も同様である。
Embodiment 5 FIG. 4 is a front explanatory view of a fifth embodiment of the evaluation board of the present invention. In Example 5, the dielectric substrate 2 and the ground electrode 4
Is the same as that of the first embodiment, but is configured by arranging nine charging electrodes 3 having an area where the dielectric substrate 2 has an electrostatic capacitance of 20 pF. The method of evaluating the static elimination characteristics of the static eliminator 5 is the same as that of the first embodiment, and the effects are also the same.

【0036】本実施例5では9個の帯電電極3のそれぞ
れの除電特性を独立して評価できるので、ガラス基板の
面内での除電効果の分布を評価できる特徴がある。この
ように帯電電極を複数個独立して形成するには、全面に
金属被膜を設けてエッチングによりパターニングした
り、不要部分にレジストを塗布しておき全面に成膜して
レジストを除去するリフトオフ法などにより形成するこ
とができる。
In the fifth embodiment, since the charge eliminating characteristics of each of the nine charging electrodes 3 can be evaluated independently, the distribution of the charge eliminating effect in the plane of the glass substrate can be evaluated. In order to independently form a plurality of charging electrodes in this way, a lift-off method of forming a metal film on the entire surface and patterning by etching, or applying a resist to unnecessary portions and forming a film on the entire surface to remove the resist And the like.

【0037】また、本実施例5では帯電電極3の面積を
静電容量が20pFになるように設けたが、20pFに
しなくても同じ面積の帯電電極3を複数個設けることに
より、誘電体基板2上の場所ごとの除電特性を評価する
ことができる。
Further, in the fifth embodiment, the area of the charging electrode 3 is provided so that the electrostatic capacitance is 20 pF. However, even if the charging electrode 3 is not set to 20 pF, a plurality of charging electrodes 3 having the same area are provided, so that the dielectric substrate is formed. It is possible to evaluate the charge removal characteristics for each of the above two locations.

【0038】さらに実際の製造ラインにおけるガラス基
板上の帯電電荷の分布を測定し、その分布と同じように
評価基板1の帯電電極3に電荷分布を生じさせ、実際の
基板と同じ状態でそれぞれの面分布の除電特性を評価す
ることもできる。これらの場合、帯電電極の数はできる
だけ多い方が、実際の電荷の面分布と同じにすることが
できる。
Further, the distribution of the charged electric charge on the glass substrate in the actual manufacturing line is measured, and the electric charge distribution is generated in the charging electrode 3 of the evaluation substrate 1 in the same manner as the distribution, and the electric charge is distributed in the same state as the actual substrate. It is also possible to evaluate the static elimination characteristics of the surface distribution. In these cases, if the number of charging electrodes is as large as possible, the surface distribution of the actual charge can be made the same.

【0039】以上、本発明の具体的な実施例を説明した
が、本発明は前記実施例に限定されるものではなく、本
発明の主旨を逸脱しない範囲で種々の変形が可能である
ことはいうまでもない。たとえば、誘電体基板、帯電電
極あるいは接地電極などの材質、寸法、形状などは前記
実施例に限定されるものではない。
Although the specific embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. Needless to say. For example, the materials, dimensions, shapes, etc. of the dielectric substrate, charging electrode, ground electrode, etc. are not limited to those in the above embodiment.

【0040】また、前記各実施例では液晶表示素子の製
造工程の場合について説明したが、この技術分野に限定
されるものではなく、半導体素子の製造ラインなど他の
イオン発生装置による除電手段における除電特性評価装
置に広く適用できる。
Further, in each of the above-mentioned embodiments, the case of the manufacturing process of the liquid crystal display element has been described, but the present invention is not limited to this technical field, and the static elimination by the static elimination means by another ion generator such as a semiconductor element production line is performed. It can be widely applied to characteristic evaluation devices.

【0041】[0041]

【発明の効果】本発明の除電特性評価装置によれば、除
電特性を評価するための電荷を帯電させる評価基板を誘
電体基板の一方の面に帯電電極が設けられ、他方の面に
接地電極が設けられた基板で構成しているため、液晶表
示素子の製造ラインなど、実際に静電気の帯電が問題と
なるガラス基板などの絶縁基板と同じ厚さに評価基板を
形成することができ、製造装置や搬送装置などの除電装
置が設けられる実ラインで評価を行うことができる。そ
の結果、実際の製造ラインと同じ状態に近づけて評価を
することができ、より正確に除電を行うことができる。
そのため、帯電電荷の放電による不良品の発生などを防
止することができ、製造工程の歩留りを向上させること
ができる。
According to the apparatus for evaluating static elimination characteristics of the present invention, an evaluation substrate for charging an electric charge for evaluating static elimination characteristics is provided with a charging electrode on one surface of a dielectric substrate and a ground electrode on the other surface. Since it is composed of a substrate provided with, it is possible to form an evaluation substrate with the same thickness as an insulating substrate such as a glass substrate where static electricity charging actually becomes a problem, such as in a liquid crystal display device manufacturing line. The evaluation can be performed on an actual line in which a static eliminator such as a device or a carrier is provided. As a result, the evaluation can be performed by approaching the same state as the actual manufacturing line, and the charge can be removed more accurately.
Therefore, it is possible to prevent the generation of defective products due to the discharge of the charged electric charges, and it is possible to improve the yield of the manufacturing process.

【0042】また、本発明の除電特性評価用の評価基板
によれば、誘電体基板の両面にそれぞれ帯電電極と接地
電極を設けるだけで構成されているため、誘電体基板を
現実に帯電が問題となるガラス基板などの実際に用いら
れる基板の厚さや材質と同じにすることができ、現実の
製造ラインと同様の状態で評価をすることができる。さ
らに帯電電極や接地電極は金属板や金属箔を貼着した
り、スパッタ法や蒸着などにより被膜することにより形
成できるとともに、エッチングでパターニングすること
により、独立の帯電電極を複数個形成することができ、
一層実ラインにおける除電装置の状態で実際の除電特性
を正確に評価することができる。
Further, according to the evaluation board for evaluating the static elimination characteristic of the present invention, since the charging electrode and the ground electrode are simply provided on both surfaces of the dielectric substrate, charging of the dielectric substrate is actually a problem. The thickness and the material of the actually used substrate such as a glass substrate can be made the same, and the evaluation can be performed in the same state as the actual manufacturing line. Further, the charging electrode and the ground electrode can be formed by attaching a metal plate or a metal foil, or by coating with a sputtering method or vapor deposition, and by patterning by etching, a plurality of independent charging electrodes can be formed. You can
The actual static elimination characteristics can be accurately evaluated in the state of the static eliminator on a more actual line.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の除電特性評価用の評価基板の一実施例
を示す断面説明図である。
FIG. 1 is a cross-sectional explanatory view showing an example of an evaluation board for evaluating static elimination characteristics of the present invention.

【図2】本発明の除電特性評価装置の一実施例を示す断
面説明図である。
FIG. 2 is a cross-sectional explanatory view showing an embodiment of the static elimination characteristic evaluation apparatus of the present invention.

【図3】本発明の評価基板の他の実施例を示す断面説明
図である。
FIG. 3 is a cross-sectional explanatory view showing another embodiment of the evaluation board of the present invention.

【図4】本発明の評価基板のさらに他の実施例を示す平
面説明図である。
FIG. 4 is an explanatory plan view showing still another embodiment of the evaluation board of the present invention.

【図5】従来の除電特性評価装置の一例を示す斜視説明
図である。
FIG. 5 is a perspective explanatory view showing an example of a conventional static elimination characteristic evaluation apparatus.

【符号の説明】[Explanation of symbols]

1 評価基板 2 誘電体基板 3 帯電電極 4 接地電極 5 除電装置 8 高電圧電源 9 表面電位計 9a プローブ 1 Evaluation Substrate 2 Dielectric Substrate 3 Charging Electrode 4 Grounding Electrode 5 Eliminating Device 8 High Voltage Power Supply 9 Surface Potentiometer 9a Probe

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 誘電体基板の一方の面に電荷が帯電され
る帯電電極が設けられ他方の面にアースに接続される接
地電極が設けられた除電特性評価用の評価基板と、該評
価基板の前記帯電電極に電荷を帯電させるための高電圧
電源と、該高電圧電源により帯電された前記帯電電極の
表面電位を計測する表面電位計とからなる除電特性評価
装置。
1. An evaluation substrate for static elimination characteristics, comprising: a dielectric substrate having a charging electrode on one surface thereof for charging an electric charge; and a ground electrode on the other surface thereof, the ground electrode being connected to a ground, and the evaluation substrate. 2. A static elimination characteristic evaluation device comprising: a high voltage power source for charging the charging electrode with electric charges; and a surface electrometer for measuring the surface potential of the charging electrode charged by the high voltage power source.
【請求項2】 誘電体基板の一方の面に電荷が帯電され
る帯電電極が設けられ、他方の面にアースに接続される
接地電極が設けられてなる除電特性評価用の評価基板。
2. An evaluation board for static elimination characteristics evaluation, comprising: one surface of a dielectric substrate provided with a charging electrode for charging an electric charge; and the other surface provided with a ground electrode connected to a ground.
【請求項3】 前記誘電体基板が実際に除電される絶縁
性基板と同じ材質で同じ厚さに形成されてなる請求項2
記載の評価基板。
3. The dielectric substrate is formed of the same material and has the same thickness as an insulating substrate on which static electricity is actually removed.
Evaluation board described.
【請求項4】 前記帯電電極および/または前記接地電
極が薄膜で形成されてなる請求項2または3記載の評価
基板。
4. The evaluation substrate according to claim 2, wherein the charging electrode and / or the ground electrode is formed of a thin film.
【請求項5】 前記帯電電極が前記誘電体基板を介した
前記接地電極との間に20±2pFの静電容量となるよ
うな大きさに形成されてなる請求項2、3または4記載
の評価基板。
5. The size according to claim 2, wherein the charging electrode is formed to have a capacitance of 20 ± 2 pF between the charging electrode and the ground electrode via the dielectric substrate. Evaluation board.
【請求項6】 前記帯電電極が前記誘電体基板の一方に
複数個独立して設けられてなる請求項2、3、4または
5記載の評価基板。
6. The evaluation substrate according to claim 2, wherein a plurality of the charging electrodes are independently provided on one side of the dielectric substrate.
JP9710695A 1995-04-21 1995-04-21 Device for evaluating destaticizing property and evaluation substrate therefor Pending JPH08292220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9710695A JPH08292220A (en) 1995-04-21 1995-04-21 Device for evaluating destaticizing property and evaluation substrate therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9710695A JPH08292220A (en) 1995-04-21 1995-04-21 Device for evaluating destaticizing property and evaluation substrate therefor

Publications (1)

Publication Number Publication Date
JPH08292220A true JPH08292220A (en) 1996-11-05

Family

ID=14183357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9710695A Pending JPH08292220A (en) 1995-04-21 1995-04-21 Device for evaluating destaticizing property and evaluation substrate therefor

Country Status (1)

Country Link
JP (1) JPH08292220A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004301721A (en) * 2003-03-31 2004-10-28 Sharp Corp Decision system, deciding method, decision program for realizing the deciding method, and computer-readable recording medium with program stored

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004301721A (en) * 2003-03-31 2004-10-28 Sharp Corp Decision system, deciding method, decision program for realizing the deciding method, and computer-readable recording medium with program stored

Similar Documents

Publication Publication Date Title
US5101543A (en) Method of making a variable capacitor microphone
KR0163223B1 (en) Substrate surface potential measuring apparatus and plasma equipment
US5027136A (en) Method and apparatus for charged particle generation
WO2002001930A3 (en) Electrostatic methods and apparatus for mounting and demounting particles from a surface having an array of tacky and non-tacky areas
JPS6278532A (en) Liquid crystal display element
JPH08292220A (en) Device for evaluating destaticizing property and evaluation substrate therefor
EP0397975B1 (en) Method of making a variable capacitor microphone
CN209496896U (en) Polarization equipment for piezoelectric material film
US5899708A (en) Method for forming a thin film transistor using an electrostatic shield
KR102344038B1 (en) Apparatus and method for esd stress testing
JPH08313486A (en) Method and apparatus for detecting charge quantity of static electricity of insulating substrate
JP3476069B2 (en) Ionizer adjustment and evaluation equipment
JP2004039421A (en) Method and device for manufacturing electric insulating sheet
US4811158A (en) Solid state charger
KR101967104B1 (en) Air Assist Ionization System
US4458161A (en) Electret device
US4785372A (en) Method and device for charging or discharging member
JPS56163272A (en) Plasma etching device
KR20070099588A (en) Electric-insulating sheet neutralizing device, neutralizing method and production method
JPS60232570A (en) Discharger
KR20000008950A (en) Liquid crystal display device and its fabricating method
JP2512013B2 (en) Board static elimination method
JPH09252038A (en) Method and apparatus for evaluation of plasma damage
SU1175692A1 (en) Robot grip
SU1702247A1 (en) Dew point sensor