JPH08288416A - Plastic semiconductor package - Google Patents

Abstract

PURPOSE: To provide a plastic semiconductor package wherein the thermal radiation of a semiconductor is promoted through employment of a laminated board with an improved thermal conductivity. CONSTITUTION: A semiconductor chip is bonded to a laminated board with a circuit formed thereon, and the semiconductor chip and the circuit are electrically connected with each other. At least the connection with the semiconductor chip of the laminated board is sealed with resin to form a plastic semiconductor package. The thermal conductivity of the laminated board is set to 0.30kcal/m/hr/ deg.C or above.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plastic in which a semiconductor chip is bonded to a laminated plate on which a circuit made of a glass base material and a thermosetting resin is formed, and at least the semiconductor chip and a connecting portion are sealed with resin. The semiconductor package is a plastic semiconductor package in which the heat dissipation of the semiconductor is improved by increasing the thermal conductivity of the laminated plate.

[0002]

2. Description of the Related Art Conventionally, a plastic semiconductor package using a printed wiring board using a general copper clad laminate is
The thermal conductivity was not sufficient, and it was difficult to sufficiently dissipate the heat generated by the densification of semiconductors. In the case of such a conventional plastic semiconductor package, this heat storage causes a defect or malfunction of the semiconductor.

[0003]

DISCLOSURE OF THE INVENTION The present invention is a plastic semiconductor package for improving the thermal conductivity of a laminated plate and for the purpose of heat dissipation of a high density semiconductor.

[0004]

That is, according to the present invention, a semiconductor chip is adhered to a laminated plate on which a circuit is formed, the semiconductor chip and the circuit are electrically connected, and at least a connecting portion with the semiconductor chip is made of resin. In a sealed plastic semiconductor package, the thermal conductivity of the laminate is 0.3
It is a plastic semiconductor package characterized by being 0 kcal / m / hr / ° C or higher.

The laminate has a thermal conductivity of 2.0 kcal / m.
Molded with a prepreg containing one or more inorganic fillers having a mixing rate of / hr / ° C or higher, the thermal conductivity of the laminate is
0.30 kcal / m / hr / ° C or higher, the laminate is formed by a prepreg containing 1 to 80% of an inorganic filler of 1 or 2 types, and the thermal conductivity of the laminate is 0.
30 kcal / m / hr / ° C or higher, and the thermosetting resin used for the laminate has a glass transition temperature of 170
A plastic semiconductor package having a temperature of not less than 0 ° C. and containing a cyanate resin as at least one component.

The present invention will be described below. The present invention is a plastic semiconductor package such as a plastic pin grid array (hereinafter referred to as PGA), a plastic ball grid array (hereinafter referred to as BGA), and a laminated plate used for the plastic semiconductor package. A plastic semiconductor package with a thermal conductivity of 0.30 kcal / m / hr / ° C or higher.

As a method for increasing the thermal conductivity of the laminated plate, there is a method of blending an inorganic filler. The inorganic filler preferably has a thermal conductivity of 2.0 kcal / m / hr / ° C. or higher, and is preferably blended in the prepreg resin in an amount of 1 to 80%.

As the thermosetting resin, cyanate resin,
Polyvalent maleimide, epoxy resin, unsaturated polyester resin, phenol resin, diallyl phthalate resin, polyamine-bismaleimide resin, polymaleimide-isocyanate resin, other thermosetting resins; a composition obtained by appropriately mixing two or more of these Further, these thermosetting resins, and compositions obtained by mixing two or more of them with polyvinyl butyral, acrylonitrile-butadiene rubber, polyfunctional acrylate compounds, other known resins and additives modified; Crosslinkable curable resin composition (IPN or semi-IPN) modified with polyethylene / epoxy resin, crosslinked polyethylene / cyanate resin, polyester carbonate / cyanate resin, or other thermoplastic resin
Is exemplified. Further, it is preferably a thermosetting resin composition containing a cyanate resin as at least one component.

Cyanate resins include 1,2-, 1,3-OR
1,4-dicyanate phenylbenzene, 2,2-bis (4-cyanatephenyl) propane, 2,2-bis (3,5-dimethyl-4)
Cyanate phenyl) propane, bis (4-cyanatephenyl) methane, etc., and a cyanate ester compound obtained by reacting a compound having two or more phenolic hydroxyl groups such as phenol novolac with cyanogen halide,
Examples thereof include cyanate resins such as those obtained by performing a preliminary reaction such as heating or using a catalyst to form a sym-triazine ring, and those mainly using these.

As the inorganic filler, silicas such as natural silica, fused silica and amorphous silica,
White carbon, titanium white, aerosil, clay, talc, wollastonite, natural mica, synthetic mica, kaolin, aluminum hydroxide, magnesia, alumina, perlite, and E-, A-, C-, L-, D-, S -, SII-, M-, G2
Examples include fine glass powders such as 0-.

For other purposes, flame retardants, lubricants,
Other additives can be added. The metal foil of the present invention is not particularly limited as long as it is used for electricity, and is appropriately selected according to the application. Copper foil is preferable.

[0012]

The present invention will be described below with reference to examples. In the examples, "parts" and "%" are based on weight unless otherwise specified.

Example 1 36 parts of 2,2-bis (4-cyanatephenyl) propane and 4 parts of bis (4-maleimidophenyl) methane at 150 ° C.
A preliminary reaction was carried out for a minute, and this was dissolved in a mixed solvent of methyl ethyl ketone and N, N-dimethylformamide. 60 parts of a brominated bisphenol A type epoxy resin (trade name; Epicoat 1121, manufactured by Yuka Shell Epoxy Co., Ltd., epoxy equivalent 450-500) and 0.01 part of zinc octylate are dissolved, and talc (inorganic filler) A varnish was obtained by mixing 25 parts of trade name; Microace P-3 Nippon Talc Co., Ltd.).

A glass cloth having a thickness of 0.1 mm was impregnated with this varnish and dried to obtain a prepreg. This prepreg is 2
The sheets were stacked and laminated on both sides with electrolytic copper foil of 18 μm, laminated and molded under the conditions of a pressure of 20 kgf / cm ² and 180 ° C. for 2 hours to obtain a double-sided copper clad laminate with an insulating layer thickness of 0.2 mm.

Example 2 In Example 1, 100 talc (trade name; Microace P-3 manufactured by Nippon Talc Co., Ltd.) was used as an inorganic filler.
The same was applied except that the parts were mixed. Example 3 The same procedure as in Example 1 was carried out except that 25 parts of boron nitride (trade name; DENCABORON NITRIDE SP-2 manufactured by Denki Kagaku Kogyo Co., Ltd.) was blended as an inorganic filler. Comparative Example 1 The same as in Example 1 except that the varnish was not mixed with an inorganic filler.

The results of the experiment are shown in Table 1. The thermal conductivity of the etched plate is a value obtained by measuring a plate obtained by etching a double-sided copper clad laminate using a Tokai Giken Co., Ltd. HR-100 type thermal conductivity measuring device.

[0017]

Table 1 Example 1 Example 2 Example 3 Comparative Example 1 Filler type Talc Talc Boron nitride free amount% 20 50 20 Tg (DMA) ℃ 180 180 180 180 Thermal conductivity ^{* 1} kcal / m / hr / ℃ 0.43 0.67 0.45 0.27 Copper foil peeling strength ^{* 2} kg / cm 1.4 1.0 1.3 1.5 * 1: Measured on the etched plate. * 2: Copper foil thickness 18 μm.

[0018]

As is clear from the detailed description of the invention, the examples, and the comparative examples, the plastic semiconductor package of the present invention significantly improves the failure of the semiconductor device due to the heat radiation failure of the semiconductor. This makes it possible to manufacture semiconductor packages, and its significance is extremely high.

Claims (4)

[Claims] 1. A plastic semiconductor package in which a semiconductor chip is bonded to a laminated plate on which a circuit is formed, the semiconductor chip and the circuit are electrically connected, and at least a connecting portion with the semiconductor chip is sealed with a resin, A plastic semiconductor package in which the thermal conductivity of the laminate is 0.30 kcal / m / hr / ° C or higher. 2. The laminate has a thermal conductivity of 2.0 kcal / m / h.
Molded with a prepreg containing one or more inorganic fillers having a r / ° C. or higher, the laminate has a thermal conductivity of 0.
The plastic semiconductor package according to claim 1, which has a temperature of 30 kcal / m / hr / ° C or higher. 3. The laminate is molded by a prepreg containing 1 to 80% of one or more kinds of inorganic fillers in a resin, and the laminate has a thermal conductivity of 0.30 kcal / m / hr / ° C. It is above, The plastic semiconductor package of Claim 1 characterized by the above-mentioned. 4. The thermosetting resin used for the laminate is
The plastic semiconductor package according to claim 1, which has a glass transition temperature of 170 ° C. or higher and contains at least one component of a cyanate resin.