JPH08285890A - Probe card - Google Patents

Abstract

PURPOSE: To provide a probe card of a vertical needle type in which the irregularity of a needle pressure due to shavings generated from an electrode is suppressed and which can hold the uniform and stable needle pressure of the needle. CONSTITUTION: A probe card 2 comprises a plurality of probe needles 30 which are brought at the ends into contact with the electrode pad P of a semiconductor wafer W, and first, second, third guide plates 27, 28, 29 vertically disposed at a predetermined interval to guide the ends of the needles 30 downward. The card is so constructed that, when the needles 30 are brought into elastic contact with the pad P, the needles 30 are bent under the first plate 27. The through hole 28A of the plate 28 is so formed in diameter larger than the through hole 29A of the third plate 29 that the bent needle 30 is brought into contact with the one position of the hole 28A of the second plate 29.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card used for inspecting the electrical characteristics of an object to be inspected, such as a semiconductor wafer, and more particularly to a probe card having a vertical needle for high integration of the object to be inspected. Regarding probe card.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, there is a step of inspecting a large number of chips (semiconductor devices) formed on a semiconductor wafer in a wafer state. In this step, a probe device is used to check the electrical characteristics of each semiconductor device. We inspect, select only good products by the inspection, and move to the subsequent process.

The probe device comprises a wafer mounting table whose movement is controllable in the X, Y, Z and θ directions, and a probe card which is arranged above the mounting table. Further, this probe card has a plurality of probe needles corresponding to the electrode pads of the chip of the semiconductor wafer. When conducting an electrical inspection of each chip of the semiconductor wafer,
With the semiconductor wafer mounted on the wafer mounting table, the wafer mounting table is controlled to move in the X, Y, Z, and θ directions so that the tip electrode tip of each probe needle of the upper probe card makes elastic contact with the electrode pad of the chip. There is. When each electrode of the chip is elastically contacted with each probe needle, the electrical characteristics of the chip are inspected by the tester based on the electric signal transmitted and received between the chip and the test head via each probe needle.

Conventionally, such a probe card is of a slanting needle type in which a plurality of probe needles extend obliquely downward from the peripheral edge of the opening formed in the center of the printed circuit board toward the center. It was the mainstream. However, with the recent high integration of semiconductor chips, the number of electrode pads per unit area of the chip has increased and the arrangement interval of the electrode pads has been reduced, while the above-mentioned oblique needle type probe card has Since there is a limit to the number of packages that can be mounted, such oblique needle type probe cards have become unable to cope with the recent high integration.

Therefore, recently, in place of the probe card of the above-mentioned type, for example, a vertical needle type high-density probe card for multi-pins proposed in Japanese Patent Publication No. 28828/1988 and No. 28862/1988 ( VTPC)
Has been developed and is being put to practical use. In the case of such a vertical type probe card, the base ends of a plurality of probe needles are connected and fixed to the conductive pattern of the printed circuit board by soldering, and a parabolic pattern is formed from the fixed part to just before the central opening of the printed circuit board. The probe needles 11 are curved and arranged vertically so as not to come into contact with each other over the entire opening. Further, as partially shown by a solid line in FIG. Through holes 12A, 13 of three guide plates 12, 13, 14 arranged in parallel
A and 14A are inserted from the upper side to the lower side, and the respective tips project downward from the lowermost guide plate 14 and come into contact with the respective electrode pads P of the semiconductor wafer W. The probe needles 11 are bonded and fixed on the upper surface of the uppermost guide plate 12 with an adhesive 15 such as an epoxy resin. As a result, the probe needles 11 are supported almost vertically by the guide plates 12, 13 and 14 while being arranged in the entire opening. Therefore, in the vertical needle type probe card, the probe needles can be arranged in the entire central opening of the printed circuit board, so that the number of pins corresponding to high integration can be increased.

When performing an electrical inspection of a semiconductor wafer using such a vertical needle type probe card,
Semiconductor wafer W by overdriving the wafer mounting table
The electrode pads P of the upper chip are elastically contacted with the respective probe needles 11 corresponding thereto, whereby the tips of the probe needles 11 are slightly retracted from the lowermost guide plate 14, and the respective probe needles 11 are in the uppermost stage. Below the guide plate 12, the same figure (a)
As shown by the chain double-dashed line, the chip is electrically buckled, and the chip is electrically in contact with the chip for electrical inspection. After the inspection, when the semiconductor wafer W descends, each buckled probe needle 11 returns to its original state due to its elasticity, and each tip has a guide plate 14 at the bottom.
Stick out from. As described above, each probe needle 11 is elastically brought into contact with the electrode pad P by overdriving the mounting table because the probe is broken by breaking the insulating film such as an oxide film on the surface of the electrode pad P formed of a conductive member such as aluminum. This is to ensure electrical connection with the needle 11. The surface of each probe needle 11 is coated with an insulating member so that the currents of the probe needles 11 do not interfere with each other even if they contact each other as shown in FIG.

[0007]

However, in the case of the conventional vertical type probe card, shavings such as an insulating film and aluminum generated from the electrode pad P while the electrical inspection of the semiconductor wafer W is repeated. P ′ is attached and accumulated on the tip portion of each probe needle 11, and when the number of contacts reaches, for example, tens of thousands of times, shavings P ′ are formed between the through hole 14A of the lowermost guide plate 14 and the probe needle 11. Gradually enter the gap and cause clogging in the gap, each probe needle 1
A frictional force is generated between the frictional force and 1. Since the amount of shavings P ′ generated varies depending on the location, different frictional forces are generated at each probe needle 11. Further, the through hole 12A of the guide plate 12 has a diameter of, for example, 110 mm, and the through holes 13A, 1 of the other guide plates 13 and 14 respectively.
Since all 4A are formed to have a diameter of 80 mm, when each probe needle 11 buckles during inspection as shown in FIG. 4A, the probe needle 11 is indicated by a ● mark in FIG. As described above, the lowermost guide plate 14 makes contact at one location a on the upper surface side of the through hole 14A, and the intermediate guide plate 13 makes contact at one location b on the lower surface side and one location c of the upper surface side of the through hole 13A. The probe needle 11 and the guide plates 13 and 14
A frictional force is generated between and. As a result, the frictional force of the latter was the only one initially, but the frictional force of the former gradually increased with different magnitudes depending on the location as the inspection was repeated.
This variation in frictional force is added to the latter frictional force, and the probe pressure of each probe needle 11 becomes non-uniform, so that the inspection result becomes unstable. Further, if this phenomenon is overlooked as it is, there is a problem that the probe needle 11 may not return to the original state and may remain buckled depending on the place.

Therefore, conventionally, as shown in FIG. 5, a tapered countersink 13B having an upwardly expanding diameter is provided on the upper surface side of the through hole 13A of the intermediate guide plate 13 to reduce the friction point at one place and stabilize it as much as possible. Some are designed to obtain the stylus pressure. However, a great deal of labor is required to provide the countersinks 13B in all of the large number of through holes 13A, which has been a factor of cost increase.

Further, in the case of the conventional vertical type probe card, as shown in FIG. 4A, the probe needles 11 closely approach each other as the semiconductor wafer W is highly integrated. Each probe needle 1 due to buckling during inspection
When 1 buckles in an arbitrary direction, adjacent probe needles 11 and 11 interfere with each other as shown in the same figure and do not show the original needle pressure, and the respective needle pressures become uneven. There was a problem.

The present invention has been made in order to solve the above problems, and suppresses variations in needle pressure due to shavings and the like generated from electrodes, and keeps the needle pressure of each probe needle uniform and stable. Providing a vertical needle type probe card that can be used, and each probe needle holds its original needle pressure without the adjacent probe needles interfering with each other, and each needle pressure can hold a stable and stable needle pressure. The object is to provide a vertical needle type probe card.

[0011]

According to a first aspect of the present invention, there is provided a probe card, which has a plurality of probe needles which come into contact with electrodes of an object to be inspected at the tips, and guides the tips of these probe needles downward. And a first guide plate, a second guide plate, and a third guide plate which are vertically arranged at a predetermined interval, and the probe needles are fixed in through holes formed in the first guide plate so as to be separated from each other. At the same time, the through holes of the second and third guide plates formed corresponding to these through holes are inserted, and when the probe needles are elastically contacted with the electrodes, the probe needles are below the first guide plate. In a probe card configured to be bent in a manner such that the through hole of the second guide plate has a larger diameter than the through hole of the third guide plate and the bent probe needle is present only at one place of the through hole of the second guide plate. It is formed to have a contact size.

In the probe card according to claim 2 of the present invention, in the invention according to claim 1, the ratio of the diameter d of the through hole of the second guide plate to the diameter d1 of the through hole of the third guide plate. The probe card according to claim 1, wherein (d / d1) is 1.125 to 2.5.

According to a third aspect of the present invention, the probe card has a plurality of probe needles which contact the electrodes of the object to be inspected at their tips, and a predetermined interval so as to guide the tips of these probe needles downward. A first guide plate, a second guide plate, and a third guide plate that are vertically spaced apart from each other are provided. The through holes of the second and third guide plates formed corresponding to the holes are inserted so that the probe needles bend below the first guide plate when the probe needles make elastic contact with the electrodes. In the probe card configured as described above, the center of the through hole of the first guide plate is laterally offset from the central axis of each of the through holes of the second and third guide plates.

According to a fourth aspect of the present invention, in the probe card according to the third aspect, the center of the through hole of the first guide plate is the center of each through hole of the second and third guide plates. It is offset from the axis by 50 to 350 μm in the lateral direction.

[0015]

According to the first aspect of the present invention, when the probe card is used to inspect the electrical characteristics of an object to be inspected such as a semiconductor wafer, each probe needle hits the electrode of the object to be inspected. When the probe needles come into contact with each other and buckle under the first guide plate, each probe needle comes into contact with only one place of the through hole of each of the second and third guide plates. By comparison, the frictional force of each probe needle is reduced, each probe needle retains its original restoring force, and even if shavings from the electrode occur, the shavings are ejected from the through hole by the restoring force of each probe needle. The accumulation is prevented, and the needle pressure of each probe needle becomes stable and uniform.

According to a second aspect of the present invention, in the first aspect of the invention, the diameter d of the through hole of the second guide plate and the diameter d1 of the through hole of the third guide plate are Ratio (d
/ D1) is 1.125 to 2.5, it is possible to obtain a probe card in which each probe needle makes contact only at one location of the through hole of the second guide plate and at one location of the through hole of the third guide plate. it can.

According to the third aspect of the present invention, when the probe card is used to inspect the electrical characteristics of an object to be inspected such as a semiconductor wafer, each probe needle is an electrode of the object to be inspected. When the probe needles are elastically contacted with each other and try to buckle under the first guide plate, the probe needles are connected to the first guide plate and the second guide plate.
Since the guide plates are inclined between the guide plates, each probe needle bends so that each inclined part bulges upward, and the buckling direction of each probe needle is opposite to the direction in which the through hole of the first guide plate is biased. The probe needles can be aligned in the same direction, there is no risk of adjacent probe needles interfering with each other, and the needle pressure of each probe needle is stable and uniform.

According to the invention of claim 4 of the present invention, in the invention of claim 3, the center of the through hole of the first guide plate is the center of each through hole of the second and third guide plates. Since it is laterally offset from the central axis by 50 to 350 μm, it is possible to surely obtain the probe card in which the buckling directions of the probe needles are aligned in one direction and adjacent probe needles do not interfere with each other. .

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the embodiments shown in FIGS. First, a probe device using the probe card of this embodiment will be described. As shown in FIG. 1, this probe apparatus is provided with a wafer mounting table 1 which is arranged in an apparatus main body (not shown) and is movable in X, Y, Z and θ directions. A semiconductor wafer W, which is an object to be inspected, can be held horizontally on the upper surface of the table 1 by a fixing means such as a vacuum chuck.

A probe card 2 of the present embodiment is arranged above the wafer mounting table 1, and the probe card 2 is mounted on a head plate provided on the upper surface of the apparatus main body by an insert ring and a card holder (whichever is used). Is also fixed and supported via (not shown). A contact ring 3 and a test head 4 are sequentially arranged on the upper side of the probe card 2, and the probe card 2 is electrically connected to the contact ring 3, the test head 4 and the tester 6 via a pogo pin 5. There is. The probe card 2 is configured as a vertical needle type ultra high density needle probe card so as to cope with high density and high integration of the semiconductor wafer W.

As shown in FIG. 1, the probe card 2 includes a printed board 21 having an opening 21A at the center,
The ground board 22 is provided on the upper side of the printed board 21 so as to be overlapped therewith and has an opening 22A at the center thereof. Further, on the lower side of the printed circuit board 21, four fixing frames 23, 24, 25 and 26 are sequentially arranged downward,
These respective frame bodies 23, 24, 25 and 26 are integrated by positioning pins and fastening screws (neither is shown).
The uppermost fixed frame body 23 is formed in the largest flange shape, and the other fixed frame bodies 24, 25, and 26 are connected to each other to form a cylindrical body. Further, the first fixed frame body 24 and the third fixed frame body 25 from the top are provided with the first frame.
A guide plate 27 is interposed. Further, a reduced diameter portion 26A is formed in the longitudinal center of the inner peripheral surface of the lowermost fixed frame 26, and second and third guide plates 28 and 29 are attached to the upper and lower sides of the reduced diameter portion 26A, respectively. Has been done. Each of these guide plates 27, 28, 29 is made of epoxy resin and has a thickness of, for example, 400 μm, and as shown in FIG. 2, through holes 27A, 28A, 29A through which a large number of probe needles 30 are inserted are formed. Are formed in a matrix,
Each of the probe needles 30 is supported almost vertically by these through holes 27A, 28A, 29A.

The probe needles 30 are connected at their base ends to pattern electrodes arranged at a narrow pitch (for example, about 1 to 1.5 mm) around the central opening 21A of the printed circuit board 21, respectively. The tip is first, second,
3 through-holes 27A, 28A of the guide plates 27, 28, 29,
29A is inserted, and slightly protrudes from the lower surface of the third guide plate 29. From the base end of each probe needle 30 to the first guide plate 2
In the curved portion 30A extending to 7, a conductor for grounding is formed in a coaxial cable shape with the probe needle itself, and this conductor is connected to the ground pattern of the printed board 21 via a conductive layer (not shown) of the grounding board 22. It is connected to the lead terminal 21B. The coaxial cable-shaped curved portion 30A of each probe needle 30 is filled in the concave portion formed by the first guide plate 27, the uppermost fixed frame 23, and the inner peripheral surface of the fixed frame body 24 below it. The adhesive 31 is adhesively fixed, and as a result, the tip end side of the curved portion 30A is fixed by the through hole 27A of the first guide plate 27 so as to be separated from each other.

The electrode pads P with which the probe needles 30 come into contact are formed, for example, 40 pieces per chip in a 60 μm square, and the pitch thereof is a narrow pitch of 100 μm. Therefore, the probe needle 30 is, for example, 70
It is formed in an extremely fine size of μm with the surface coated with an insulating agent. The probe needles 30 are also arranged at the same pitch, and the through holes 28 of the second and third guide plates 28, 29 are arranged.
A and 29A are inserted with a gap. The tip of the probe needle 30 has a conical shape, and its tip is formed on a flat surface of, for example, 15 μm and projects downward from the third guide plate 29. Further, the length from the lower surface of the first guide plate 27 of the probe needle 30 to the tip is formed to be, for example, about 15 mm, of which the second guide plate 28 and the third guide plate 29.
The portion between them is formed as a buckling portion of about 10 mm, and protrudes from the lower surface of the third guide plate 29 by, for example, about 250 μm. The probe needle 30 is made of an alloy of gold and copper in order to reduce the contact resistance with the electrode pad P and improve durability. In addition, each guide plate 27, 28, 29
Is formed to have a thickness of 400 μm, for example.

Further, in this embodiment, (a) and (b) of FIG.
As shown in FIG. 3, each through hole 28A of the second guide plate 28 has a larger diameter than the through hole 29A of the third guide plate 29, and each probe needle 30 bent due to buckling at the time of inspection has a through hole of the second guide plate 28. 28A is formed in such a size that it comes into contact with only one place. In order to ensure that the probe needle 30 is in contact with the through hole 28A at one place, the ratio (d / d1) of the diameter d of the through hole 28A to the diameter d1 of the through hole 29A is 1.125-2.
5, more preferably 1.125 to 1.25. Specifically, it is preferable that the through holes 28A have a size of 90 to 200 μm, more preferably 90 to 100 μm, and the through holes 29A have a size of 80 μm. If this ratio is less than 1.125, the probe needle 30 may come into contact with the through hole 28A at two locations as in the conventional case, and if it exceeds 2.5, the through hole is too large and the through hole 28A is difficult to form, and the adjacent ones are adjacent to each other. There is a possibility that the distance between the through holes 28A, 28A is so wide that it is not practical for the pitch of the electrodes. Needless to say, the diameters of the through holes 28A and 29A relatively vary according to the outer diameter of the probe needle 30.

Next, the operation will be described. When inspecting the electrical characteristics of the semiconductor wafer W using the probe card 2 of this embodiment, the wafer mounting table 1 is moved in the X, Y and θ directions for positioning, and then the wafer mounting table 1 is moved. After ascending to bring each pad P of the semiconductor wafer W into contact with each probe needle 30 of the probe card 2, the wafer mounting table 1
When each probe needle 30 makes elastic contact with the electrode pad P by further overdriving the probe, each probe needle 30 causes the first guide plate 2 to move.
7 and the second guide plate 28, and also between the second guide plate 28 and the third guide plate 29 to some extent. At this time, the oxide film or the like of the electrode pad P is scraped off by the tip of each probe needle 30, and an electric signal is exchanged between the chip on the semiconductor wafer W and the tester 6 to perform an electrical inspection of the chip.

When the probe needles 30 buckle as described above, the probe needles 30 pass through the through holes 28A of the second guide plate 28.
Also, the probe needles 30 contact the through hole 29A of the third guide plate 29, but the through hole 28A is formed larger than the through hole 29A, so that each probe needle 30 is located at one position above the through hole 29A and above the through hole 28A. The contact is made at one place, and is not made on the lower side of the through hole 28A as in the conventional case. Therefore, each probe needle 30 of the present embodiment has one less contact point than the conventional probe needle, and the frictional force of each probe needle 30 is reduced to 2/3 of the conventional one. Therefore, when the wafer mounting table 1 is lowered after the inspection, the restoring force due to the spring force of each probe needle 30 is remarkably larger than the conventional one, and the shavings P ′ of the electrode pad P are as shown in FIG. 4B. Even if it penetrates into the through hole 29A of the third guide plate 29, the shavings P ′ are repelled from the through hole 29A by the restoring force of each probe needle 30 to prevent the accumulation thereof and to obtain a uniform and stable needle pressure. it can.

As described above, according to this embodiment, the through hole 28A of the second guide plate 28 supporting the probe needle 30 is provided.
Is formed to have a diameter larger than that of the through hole 29A of the third guide plate 29 and the bent probe needle 30 is in contact with only one place of the through hole 28A of the second guide plate 28.
Since the frictional force of 0 is reduced to almost 2/3 of the conventional one, even if the electrical inspection of the semiconductor wafer W is repeated hundreds of thousands of times or more, for example, the spring of each probe needle 30 is lowered when the wafer mounting table 1 descends after the inspection. The restoring force due to the force is remarkably larger than the conventional one, and a uniform and stable stylus pressure can be obtained without accumulating the shavings P ′ of the electrode pad P in the through hole 29A, so that an accurate inspection can be performed. . If the conventional probe card is repeatedly inspected tens of thousands of times, the spring force of the probe needle weakens due to the large frictional force between the probe needle and the through hole,
Accumulation of shavings P'cannot be prevented, and the needle pressure becomes small in some places, making it difficult to perform an accurate inspection.

FIGS. 3A and 3B are views showing a probe card 2'of another embodiment of the present invention. Through hole 27'A of first guide plate 27 'of probe card 2'of this embodiment
Are arranged at positions slightly deviated from the positions of the electrode pads P of the chips T on the semiconductor wafer W, as shown in FIG. The lateral through-holes 27'A in the same figure (a) are slightly offset from the lateral electrode pads P of the chip T, and the vertical through-holes 27'A are inward of the vertical electrode pads P. The bias dimensions are approximately equal to each other. The relationship between the through hole 27′A of the first guide plate 27 ′ and the second and third guide plates 28 ′ and 29 ′ is shown in FIG.
6B is a diagram showing a cross section taken along line BB of FIG. As is clear from this figure, the through hole 2 of the first guide plate 27 '
The center of 7'A is laterally offset from the central axis of each through hole 28'A, 29'A of the second and third guide plates 28 ', 29' by the dimension L as described above, and each through hole 27'A, 28 '
A and 29'A have the same size. The central axes of the through hole 28'A and the through hole 29'A coincide with each other.

By thus shifting the position of the through hole 27'A from the other through holes 28'A, 29'A by the dimension L, the inclined portion between the through holes 27'A and 28'A. Three
The probe needle 30 'buckles in the direction in which 0'A swells upward,
The buckling direction of the probe needle 30 'can be aligned in one direction, and there is no risk of buckling in any direction as in the conventional case. Therefore, the adjacent probe needles 30 ′ and 30 ′ do not interfere with each other due to buckling, and each probe needle 30 ′ retains the original needle pressure and a uniform and stable needle pressure can be obtained. The bias dimension L is preferably in the range of 50 to 350 μm, more preferably in the range of 150 to 200 μm. 50μ
If it is less than m, it is difficult to align the buckling direction of the probe needle 30 ′ in one fixed direction because the amount of deviation is too small.
If it exceeds 0 μm, the probe needle 30 ′ may not be inserted into the through hole 28′A, which is not preferable.

Next, the operation will be described. When inspecting the electrical characteristics of the semiconductor wafer W using the probe card 2'of this embodiment, each probe needle 30 'buckles. At this time, each probe needle 30' is shown in FIG. 3 (b). Thus, the inclined portion 30'A between the through hole 27'A of the first guide plate 27 'and the through hole 28'A of the second guide plate 28' buckles so as to bulge upward, and buckles in other directions. do not do. Therefore, the buckling directions of the probe needles 30 'are aligned, there is no risk of the inclined portions 30'A interfering with each other, uniform needle pressure can be obtained, and stable inspection can be performed.

Therefore, according to this embodiment, the probe needle 3
The center of the through hole 27'A of the first guide plate 27 'supporting 0'is the through holes 28'A of the second and third guide plates 28', 29 ',
Since the probe needles 30 'are offset from the central axis of 29'A in the lateral direction as described above, the buckling directions of the probe needles 30' can be aligned, and adjacent probe needles 30 ', 30' may interfere with each other. Since the probe pressure of each probe needle 30 'is uniform, a stable inspection can be performed accurately.

The present invention is not limited to the above embodiments, and the through holes of the second guide plate vertically supporting the probe needles of the vertical needle type probe card have the through holes of the third guide plate. A probe needle having a diameter larger than that of the hole and being bent is formed in such a size that the probe needle comes into contact with only one place of the through hole of the second guide plate, or the center of the through hole of the first guide plate is the second or third
The present invention includes any plate that is laterally offset from the central axis of each through hole of the guide plate.

[0033]

According to the first and second aspects of the present invention, the probe needle is such that the through hole of the second guide plate has a larger diameter than the through hole of the third guide plate and is bent. 2 Since the size of the guide plate is such that it can come into contact with only one place of the through hole, variations in stylus pressure due to shavings generated from the electrodes are suppressed, and the stylus pressure of each probe needle becomes uniform and always stable. It is possible to provide a vertical needle type probe card capable of retaining the above-mentioned needle pressure.

According to the third and fourth aspects of the present invention, the center of the through hole of the first guide plate is the second,
Since the center axis of each through hole of the third guide plate is laterally offset, adjacent probe needles do not interfere with each other and the needle pressure of each probe needle is uniform, so that a stable needle pressure is always maintained. It is possible to provide a vertical needle type probe card that can be used.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an entire probe device using an embodiment of a probe card of the present invention.

2 is an enlarged view showing a main part of the probe card shown in FIG. 1, and FIG. 2 (a) is a partial sectional view showing an enlarged part of a cross section taken along line II-II of FIG. 1; (B) is the same figure (a)
FIG. 7 is a partial cross-sectional view showing an enlarged relationship between a probe needle and an electrode pad of a semiconductor wafer at the time of inspection in a cross section taken along line BB of the probe card shown in FIG.

FIG. 3 is a view showing another embodiment of the probe card of the present invention, and FIG. 3 (a) is a plan view conceptually showing one relationship between the electrode pad on the semiconductor wafer and the through hole of the first guide plate. 2B is a partial cross-sectional view schematically showing the relationship between the probe needle and the electrode pad of the semiconductor wafer in the cross section taken along the line BB of the probe card shown in FIG.

FIG. 4 is a sectional view of an essential part showing a state in which a semiconductor wafer is electrically inspected using a conventional vertical needle type probe card; FIG. 4A shows a state in which the probe needle is elastically contacted with an electrode pad. FIG. 3B is a diagram showing a part of FIG.

FIG. 5 is a view showing another example of a conventional vertical needle type probe card, and is a cross-sectional view of a principal part immediately after one probe needle of the probe card comes into contact with an electrode pad.

[Explanation of symbols]

 2 probe card 27 1st guide plate 27A through hole 28 2nd guide plate 28A through hole 29 3rd guide plate 29A through hole 30 probe needle W semiconductor wafer (inspection object) P electrode

Continuation of front page (72) Inventor Masaru Saita 7-5-11 Takinogawa, Kita-ku, Tokyo Inside Yokoo Co., Ltd.

Claims (4)

[Claims] 1. A plurality of probe needles, each of which has a tip contacting an electrode of a device under test, and a first and a second arranged vertically with a predetermined interval so as to guide the tips of these probe needles downward. , And a third guide plate, wherein the probe needles are fixed in through holes formed in the first guide plate so as to be spaced apart from each other, and second and third probe needles are formed corresponding to these through holes. When the probe needles are inserted into the through holes of the guide plate and the probe needles elastically contact the electrodes, the probe needles are moved to the first position.
In the probe card configured to bend below the guide plate, the through hole of the second guide plate has a larger diameter than the through hole of the third guide plate, and the bent probe needle is the through hole of the second guide plate. A probe card characterized in that the probe card is formed in such a size that it comes into contact with only one place. 2. The ratio (d / d1) of the diameter d of the through hole of the second guide plate and the diameter d1 of the through hole of the third guide plate is 1.125-2.
5. The probe card according to claim 1, wherein the probe card is 5. 3. A plurality of probe needles which contact the electrodes of the object to be inspected at their tips, and first and second probes which are vertically arranged at predetermined intervals so as to guide the tips of these probe needles downward. , And a third guide plate, wherein the probe needles are fixed in through holes formed in the first guide plate so as to be spaced apart from each other, and second and third probe needles are formed corresponding to these through holes. When the probe needles are inserted into the through holes of the guide plate and the probe needles elastically contact the electrodes, the probe needles are moved to the first position.
In the probe card configured to bend below the guide plate, the center of the through hole of the first guide plate is laterally offset from the central axis of each of the through holes of the second and third guide plates. Characteristic probe card. 4. The center of the through hole of the first guide plate is the second and third centers.
50 to 350μ laterally from the central axis of each through hole of the guide plate
A probe card characterized by being biased m.