JPH08273530A - Manufacture of electron emission element, electron source, display panel, and image forming device - Google Patents

Abstract

PURPOSE: To provide a method for manufacturing an electron emission element, an electron source, a display panel, and an image forming device at low cost by simplifying a process for manufacturing a thin film for formation of an electron releasing part. CONSTITUTION: A method for manufacturing an electron emission element having a conductive film 4 forming an electron releasing part 5 between electrodes 2, 3 is described. Processes for forming the conductive film where the electron releasing part is formed include a process in which an aqueous solution containing a metal colloid is formed into droplets and imparted onto the substrate and a process for heating the aqueous solution imparted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electron-emitting device, and more particularly to an electron-emitting device formed by using an ink jet method, an electron source using the same, a display panel and an image forming apparatus. .

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type element (hereinafter abbreviated as FE type element), a metal / insulating layer / metal type element (hereinafter abbreviated as MIM element), a surface conduction type electron emission element and the like.

As a report example of the FE type element, WP Dyke &
WW Dolan, “Field emission”, Advance in Electro
n Physics, 8, 89 (1956) and “Physical properties of t
hin-film field emission cathodes with molybdenum c
Ones ”, J. Appl. hys., 47, 5248 (1976), etc. are known. CA Mead,“ Thetun is an example of a reported MIM element.
nel-emission amplifier ”A.Appl. Phys., 32, 646 (19
61) etc. are known. MI Elinson, Radio Eng. Electron Phys.,
There are 10, (1965) etc.

The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is passed through a thin film of a small area formed on a substrate in parallel with the film surface. As the electron-emitting device, SnO ₂ by Erinson et al.
In addition to those using thin films, those using Au thin films [G.Di
ttmer: “Thin Solid Films”, 9, 317 (1972)], In ₂
Using O ₃ / SnO ₂ thin film [M. Hartwell and C.
G. Fonstad: “IEEE Trans. ED Conf.”, 519 (1975)],
Using a carbon thin film [Hiraki Araki et al .: Vacuum, No. 26
Vol. 1, No. 1, page 22 (1983)] and the like are reported.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell element structure will be described with reference to FIG. In the figure, 1 is an insulating substrate,
Reference numerals 2 and 3 are a pair of element electrodes for applying a voltage to the element, and 4 is a thin film including an electron emission portion, which is made of a metal oxide thin film formed by sputtering or the like, and is subjected to an energization process called energization forming which will be described later. The emission part 5 is formed.
The element electrode interval L in the figure is set to 0.5 mm to 1 mm, and the element width W'is set to about 0.1 mm. W represents the width of the device electrode, and d represents the thickness of the device electrode. Further, the position and shape of the electron emitting portion 5 are schematic diagrams.

Conventionally, in these surface conduction electron-emitting devices, it has been general that the electron-emitting portion forming thin film is formed in advance by an energization process called forming before the electron-emitting portion is emitted. . That is, the forming means that the electrodes 2 and 3 are applied to both ends of the thin film for forming an electron emitting portion to apply a voltage to energize the thin film for forming an electron emitting portion, thereby locally breaking, deforming or degrading the thin film for forming an electron emitting portion. That is, the electron emitting portion 5 having a high resistance is formed.
In addition, a crack may be generated in a part of the thin film for forming an electron emitting portion due to the forming, and electrons may be emitted from the vicinity of the crack to form the electron emitting portion 5.

In the surface conduction electron-emitting device which has been subjected to the above-mentioned forming treatment, a voltage is applied to the thin film 4 including the above-mentioned electron-emitting portion to cause a current to flow on the surface of the device, so that electrons are emitted from the above-mentioned electron-emitting portion 5. To release.

[0008]

Since the conventional electron-emitting device as described above is manufactured mainly by utilizing the photolithographic technique according to the semiconductor process, it is difficult to form the device on a large-sized substrate. At the same time, there is a problem that the manufacturing cost is high. It is an object of the present invention to provide a low-cost electron-emitting device, an electron source using the same, a display panel, and a method for manufacturing an image forming apparatus, by simplifying the manufacturing process of the thin film for forming an electron-emitting portion in the above-mentioned conventional technique. It is in.

[0009]

According to the method of manufacturing an electron-emitting device of the present invention, in the method of manufacturing an electron-emitting device having a conductive film having an electron-emitting part formed between electrodes, the electron-emitting part is formed. The method of manufacturing an electron-emitting device, wherein the step of forming the conductive film includes a step of forming an aqueous solution containing a metal colloid into droplets and applying the droplet onto the substrate, and a step of heating the applied aqueous solution. It is characterized by.

Still another aspect of the present invention relates to a method of manufacturing an electron source, a display panel and an image forming apparatus using the electron-emitting device formed by such a method of manufacturing an electron-emitting device.

The method of manufacturing the electron-emitting device according to the present invention will be described below.

The metal colloid used in the present invention may be one produced by a chemical reaction or one produced by a physical operation. Examples of the chemical reaction include an aqueous solution produced by the sodium protarbate method, and examples of the physical operation include independently dispersed ultrafine particles produced by a gas evaporation method. What is colloid?
It means that a dispersion of any size (about 10 to 1000 angstroms) is contained in any homogeneous medium. For example, in the case of colloidal Au particles provided by Imhausen, the particle size is determined by an electron micrograph. Is 30
A Gaussian distribution centered on 0 angstrom has been reported (extracted from V. Borries, Kausche “Colloid Chemistry” by B. Jagensons / ME Straumanis). FIG. 6 shows the frequency distribution of the diameter of the colloidal Au particles. A theoretical Gaussian curve (broken line without experimental points) is also shown for comparison. As described above, by using the metal colloid solution as the raw material of the thin film, it is possible to form fine particles having a relatively uniform particle size from the beginning, so that the thin film to be formed is uniform and has no unevenness. The optimum range of the metal concentration of the solution varies depending on the kind of the metal element used, but is generally 0.01 by weight.
% Or more and 5% or less is suitable. If the metal concentration is too low, it will be necessary to apply a large amount of the solution droplets in order to apply the desired amount of metal to the substrate, and as a result not only the time required for applying the droplets will increase, but also on the substrate. Therefore, a large liquid pool is unnecessarily generated, and the purpose of applying the metal only to a desired position cannot be achieved. On the contrary, if the metal concentration of the solution is too high, the droplets applied to the substrate become significantly non-uniform when dried or baked in a later step, and as a result, the conductive film of the electron emission part becomes non-uniform. It deteriorates the characteristics of the electron-emitting device.

The metal elements of the metal colloid used in the present invention include Pd, Pt, Ru, Ag, Au and T.
i, In, Cu, Cr, Fe, Zn, Sn, Ta, W,
Any of Pb can be used.

The liquid applied to the substrate for forming the electron emitting portion conductive film used in the present invention is an aqueous solution containing the above metal colloid. Furthermore, the present inventors have found that when a polar solvent is added to water together with the above metal colloid compound, the homogeneity of the metal colloid is improved and that the adhesion stability of droplets of the solution applied to the substrate surface is improved as compared with the case where it is not added. I found to improve. Suitable polar solvents for this solution include dimethyl sulfoxide. Further, the concentration range of the polar solvent is 0.005% to 70% by weight. If it is less than 0.005%, almost no effect of addition can be confirmed. When it is 70% or more, the drying of the droplets applied on the substrate is slow and the handling in the process becomes troublesome.

The means for applying the metal colloidal solution to the substrate may be any method as long as it can form and apply droplets, but particularly minute droplets can be efficiently generated and imparted with appropriate accuracy. The inkjet method, which has good controllability, is convenient. Inkjet methods include those that generate and impart droplets by mechanical impact such as piezo elements, and the bubble jet method that imparts droplets by bumping by heating the liquid with a minute heater, etc. It is possible to generate minute droplets of about several to several tens of micrograms with good reproducibility and apply them to the substrate.

The metal colloid solution applied to the substrate by the above means is dried and baked to form a conductive fine particle film, thereby forming a fine particle film for electron emission on the substrate. It should be noted that the fine particle film described here is a film in which a plurality of fine particles are aggregated, and is not only a state in which the fine particles are microscopically dispersed and arranged, but also a state in which the fine particles are adjacent to each other or overlap each other (including an island shape). Point Further, the particle diameter of the fine particle film means the diameter of fine particles whose particle shape can be recognized in the above state.

For the drying step, generally used natural drying, blast drying, heat drying or the like may be used. For the firing step, a heating means usually used may be used.
~ 15 minutes is preferred. At that time, it is not necessary to thermally decompose the organic metal material as in the case of using it. It is not always necessary to perform the drying step and the firing step as separate steps,
It does not matter if you go consecutively and simultaneously.

[0018]

When the fine particle film is formed according to the above method to form the electron-emitting conductive thin film, the droplet can be selectively applied only to an arbitrary portion on the substrate in the droplet applying step. Therefore, it is possible to replace the conventional process of applying an organic metal or the like on the entire surface of the substrate and baking it, and then removing the unnecessary portion of the conductive inorganic fine particle film by applying the photolithographic technique to a simple and low-cost process.

The polar solvent such as dimethyl sulfoxide contained in the liquid applied as droplets to the substrate used in the manufacturing method of the present invention is an organic solvent that is easily mixed with water. These evenly disperse the metal colloid in an aqueous solution. It is considered that this may increase the uniformity of the metal colloid used in the method of the present invention and contribute to providing a uniform film when the droplets of the solution dry on the substrate.

Furthermore, since the metal colloid used in the present invention is an inorganic fine particle from the beginning, the firing process can be simplified (no need to be thermally decomposed) and electron emission can be performed as compared with the case where an organometallic material is used. The forming power at the time of forming the part can be reduced by 20 to 30%.

Next, as the basic constitution of the electron-emitting device formed by the manufacturing method of the present invention, there are two constitutions of a flat type and a vertical type.

First, the structure of the electron-emitting device will be described.

FIG. 1 is a schematic plan view showing the basic structure of a basic electron-emitting device suitable for the present invention.
The basic structure of a basic electron-emitting device suitable for the present invention will be described with reference to FIG.

In FIG. 1, 1 is an insulating substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion. As the insulating substrate 1, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, a soda lime glass substrate laminated with SiO ₂ formed by a sputtering method or the like, and ceramics such as alumina are used. .

The material of the opposing device electrodes 2 and 3 is as follows:
Common conductor materials are used, such as Ni, Cr, Au,
A printed conductor composed of a metal or alloy such as Mo, W, Pt, Ti, Al, Cu, Pd and a metal such as Pd, Ag, Au, RuO ₂ , Pd-Ag or a metal oxide and glass, It is appropriately selected from a transparent conductor such as In ₂ O ₃ —SnO ₂ and a semiconductor material such as polysilicon.

The shape of the element electrode interval (L) and the element electrode length (W) are appropriately designed according to the applied form.

The device electrode spacing (L) is preferably several hundred angstroms to several hundreds of micrometers, and more preferably several micrometers to several tens of micrometers depending on the voltage applied between the device electrodes.

The device electrode length (W) is preferably several micrometers to several hundreds of micrometers depending on the resistance value of the electrodes and electron emission characteristics, and the film thickness d of the device electrodes 2 and 3 is several hundreds. It is a few micrometers from Angstrom.

In addition to the structure shown in FIG.
The conductive thin film 4 and the opposing device electrodes 2 and 3 may be laminated in this order on the above.

The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The thickness of the conductive thin film 4 is step coverage to the device electrodes 2 and 3, and between the device electrodes 2 and 3. Is set appropriately according to the resistance value of the above-mentioned and energization forming conditions to be described later, preferably from several angstroms to several thousand angstroms, particularly preferably from 10 angstroms to 500 angstroms, and the resistance value is from 10 2 to 10 7 The sheet resistance value is the square ohm / □.

The particle size of the fine particles described here is from several angstroms to several thousand angstroms, preferably from 10 angstroms to 200 angstroms. The material forming the conductive thin film 4 is Pd,
Pt, Ru, Ag, Au, Ti, In, Cu, Cr, F
e, Zn, Sn, Ta, W, Pb and other metals, PdO, S
Metal oxides such as nO ₂ , In ₂ O ₃ , PbO and Sb ₂ O ₃ , HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ and YB
₄ , metal borides such as GdB ₄ , TiC, ZrC, Hf
Metal carbides such as C, TaC, SiC, WC, TiN, Z
Metal nitrides such as rN and HfN, semiconductors such as Si and Ge,
Examples include carbon.

The electron emitting portion 5 is a high-resistance crack formed in a part of the conductive thin film 4, and depends on the film thickness, film quality, material of the conductive thin film 4, and the manufacturing method such as energization forming described later. Formed. Further, it may have conductive fine particles having a particle size of several hundred angstroms to several hundred angstroms. The conductive fine particles are the same as some or all of the elements of the material forming the conductive thin film 4. Further, the electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon and a carbon compound.

Next, a vertical electron-emitting device which is an electron-emitting device having another structure suitable for the present invention will be described.

FIG. 2 is a schematic drawing showing the structure of a basic vertical electron-emitting device suitable for the present invention. 2, the same reference numerals as those in FIG. 1 are the same. Reference numeral 21 is a step forming portion. The substrate 1, the device electrodes 2, 3, the conductive thin film 4, and the electron-emitting portion 5 are made of the same material as that of the above-described planar electron-emitting device, and the step forming portion 21 is formed by the vacuum deposition method or the printing method. SiO ₂ formed by sputtering, etc.
And the like, and the film thickness of the step forming portion 21 corresponds to the device electrode interval L of the flat-type electron-emitting device described above and is several tens of micrometers to several tens of angstroms. It is set depending on the manufacturing method and the voltage applied between the device electrodes, but it is preferably several hundred angstroms to several tens of micrometers.

Since the conductive thin film 4 is formed after the device electrodes 2 and 3 and the step forming portion 21 are formed, it is laminated on the device electrodes 2 and 3. In addition, the electron emitting portion 5 is shown in FIG.
Although it is shown linearly on the step forming portion 21,
The shape and position are not limited to this, depending on the energization forming conditions and the like.

Various methods can be considered as a method for manufacturing the above-mentioned electron-emitting device, and one example thereof is shown in FIG.

An outline of a method of manufacturing an electron-emitting device will be described below in sequence with reference to FIGS. 1 and 3. The same reference numerals as those in FIG. 1 indicate the same members.

The outline of the method for manufacturing the electron-emitting device will be described below in order with reference to the drawings.

1) After the insulating substrate 1 is thoroughly washed with a detergent, pure water and an organic solvent, the insulating property is obtained by a step of depositing an electrode material and a partial removal step of the same material by a photolithography technique or by a printing technique. Element electrodes 2 and 3 are formed on the surface of the substrate 1 (FIG. 3A).

2) Using the droplet applying means 21, for example,
A droplet 22 of an aqueous solution containing an inorganic colloid is applied to the gap portion between the device electrodes 2 and 3 on the insulating substrate so as to extend over both electrodes to form a liquid pool 23 (FIG. 3 (b)). This substrate is dried and baked to form the electron emission portion forming thin film 4 (FIG. 3C).

3) Subsequently, an energization process called forming is performed in the vacuum container. When a voltage is applied between the device electrodes 2 and 3 by a power supply (not shown) in a pulsed manner or by a high-speed rising voltage, an electron-emitting portion 5 having a changed structure is formed at the site of the electron-emitting portion forming thin film 4. (FIG. 3 (d)). The electron-emitting portion 5 is a portion where the electron-emitting portion forming thin film 4 is locally destroyed, deformed or altered by the above-mentioned energization process and the structure is changed. As described above, it has been observed that the electron emitting portion 5 is composed of conductive fine particles.

FIG. 4 shows the voltage waveform of the forming process. In FIG. 4, T1 and T2 are the pulse width and pulse interval of the voltage waveform, and T1 is 1 microsecond to 10 milliseconds, and
2 is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave (peak voltage during forming) is about 4V to 10V. The forming process was performed by applying the above-mentioned voltage waveform between the electrodes of the device for several tens of seconds in a vacuum atmosphere.

In the above description, a triangular wave pulse is applied between the electrodes of the element to perform the forming process in order to form the electron emitting portion. However, the waveform applied between the electrodes of the element is not limited to the triangular wave. Alternatively, a desired waveform such as a rectangular wave may be used, and its crest value, pulse width, pulse interval, etc. are not limited to the above values, and a desired value may be selected if the electron-emitting portion is well formed. be able to.

4) Subsequently, it is desirable to perform a process called activation on the element that has undergone the above forming. The activation referred to here means a suitable degree of vacuum, for example 10 ⁻⁴ to 10
^This is a process of repeatedly applying a pulse voltage similar to the above-mentioned forming to the element under a vacuum degree of ^-5 torr. The activation treatment deposits carbon or a carbon compound derived from a dilute organic compound on the thin film for forming the electron emission portion, and remarkably changes the device current If and the emission current Ie of the electron emission device. The activation may be terminated, for example, when the emission current Ie reaches almost saturation.

The basic characteristics of the electron-emitting device according to the present invention produced by the above device structure and manufacturing method will be described with reference to FIGS.

FIG. 5 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring the electron emission characteristics of the element having the configuration shown in FIG. Device current If and emission current Ie of the electron-emitting device
In the measurement of 1, the power source 31 and the ammeter 30 are connected to the device electrodes 2 and 3, and the anode electrode 34 that connects the power source 33 and the ammeter 32 is arranged above the electron-emitting device. In FIG. 5, 1 is an insulating substrate, 2 and 3 are device electrodes, 4 is a thin film including an electron emitting portion, and 5 is an electron emitting portion. Further, 31 is a power supply for applying a device voltage Vf to the device, 30 is an ammeter for measuring a device current If flowing through the thin film 4 including the electron emitting portion between the device electrodes 2 and 3, 34
Is an anode electrode for capturing the emission current Ie emitted from the electron emission portion of the device, 33 is a high-voltage power supply for applying a voltage to the anode electrode 34, and 32 is an emission current emitted from the electron emission portion 3 of the device It is an ammeter for measuring Ie.

The electron-emitting device and the anode electrode 34 are installed in a vacuum device, and the vacuum device is equipped with equipment necessary for the vacuum device such as an exhaust pump and a vacuum gauge, which are not shown. The device can be measured and evaluated under vacuum. The voltage of the anode electrode is 1
kV to 10 kV, and the distance H between the anode electrode and the electron-emitting device was measured in the range of 2 mm to 8 mm.

Further, as a result of earnest studies on the characteristics of the above-mentioned electron-emitting device according to the present invention, the present inventors found out the characteristic characteristic which is the principle of the present invention. FIG. 5 shows a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf measured by the measurement / evaluation apparatus shown in FIG. The magnitude of the device current If is significantly different from the emission current Ie. In FIG. 6, a linear scale is shown in arbitrary units for qualitative comparison of changes in If and Ie.

This electron-emitting device has three characteristics with respect to the emission current Ie. First, as is clear from FIG. 6, when a device voltage higher than a certain voltage (called a threshold voltage, Vth in FIG. 6) is applied to this device, the emission current Ie rapidly increases, while At the threshold voltage Vth or lower, the emission current Ie is hardly detected. That is, the emission current I
It is a non-linear element having a clear threshold voltage Vth with respect to e. Secondly, since the emission current Ie depends on the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.
Thirdly, the emitted charges captured by the anode electrode 34 depend on the time for which the device voltage Vf is applied. That is, the amount of charge captured by the anode electrode 34 can be controlled by the time for which the device voltage Vf is applied. Since the electron-emitting device according to the present invention has the above characteristics, it can be expected to be applied to various fields.

FIG. 6 shows an example of a characteristic (called MI characteristic) in which the element current If monotonously increases with respect to the element voltage Vf. In addition to this, the element current If is a voltage with respect to the element voltage Vf. In some cases, a controlled negative resistance characteristic (called VCNR characteristic) is exhibited (not shown). In this case also, the present electron-emitting device has the three characteristic features described above.

The basic structure of the electron-emitting device has been described above.
Although the manufacturing method has been described, according to the idea of the present invention, as long as the characteristics of the electron-emitting device have the above-mentioned three characteristics, the invention is not limited to the above-described configuration and the like, and image formation of an electron source, a display device, and the like described later Also available in the device.

Next, the electron source, the display panel and the image forming apparatus manufacturing method of the present invention, and the electron source, the display panel and the image forming apparatus obtained by these methods will be described. First, a method of manufacturing an electron source is a method of manufacturing an electron source including an electron-emitting device and means for applying a voltage to the device, wherein the electron-emitting device is a method for manufacturing the electron-emitting device of the present invention. The method is characterized in that In addition, a method of manufacturing a display panel includes a method of manufacturing a display panel, which includes an electron source including an electron-emitting device and a voltage applying unit to the device, and a light-emitting body that receives electrons emitted from the device and emits light. The method is characterized in that the electron-emitting device is manufactured by the above-described method for manufacturing an electron-emitting device according to the present invention. Furthermore, the image forming apparatus manufacturing method includes an electron source including an electron-emitting device and a voltage applying unit for the device, a light-emitting body that receives an electron emitted from the device and emits light, and an electron source based on an external signal. A method of manufacturing an image forming apparatus, comprising: a drive circuit for controlling a voltage applied to the device, wherein the electron-emitting device is manufactured by the method of manufacturing an electron-emitting device according to the present invention. is there.

As a method of arranging the electron-emitting devices on the substrate, for example, a large number of the electron-emitting devices described in the conventional example are arranged in parallel, and both ends of the individual devices are connected by wiring, and A large number of rows are arranged (called a row direction), and a control electrode (also called a grid) installed in a space above the electron source in a direction orthogonal to the wiring (called a column direction) allows A ladder arrangement that controls and drives the electrons of
An arrangement method in which n Y-direction wirings are installed on the m-number of X-direction wirings described below via interlayer insulation, and the X-direction wirings and the Y-direction wirings are connected to a pair of electron electrodes of the electron-emitting device, respectively. Can be raised. This will be referred to as a simple matrix arrangement hereinafter.
First, the simple matrix arrangement will be described in detail.

According to the three characteristics of the basic characteristics of the electron-emitting device according to the present invention described above, even in the electron-emitting device arranged in the simple matrix, the emitted electrons from the electron-emitting device are not higher than the threshold voltage. The crest value and width of the pulse voltage applied between the opposing element electrodes are controlled. On the other hand, below the threshold voltage, almost no electrons are emitted. According to this characteristic, even when a large number of electron-emitting devices are arranged, an arbitrary electron-emitting device can be selected by appropriately applying the pulsed voltage to each device, and the electron emission amount can be controlled. It will be possible.

The structure of the electron source substrate constructed based on this principle will be described below with reference to FIG. 7 in FIG.
1 is an electron source substrate, 72 is an X-direction wiring, 73 is a Y-direction wiring, 74 is an electron-emitting device, and 75 is a connection. The electron-emitting device 74 may be either the flat type or the vertical type described above.

In the figure, the electron source substrate 71 is the above-mentioned glass substrate or the like, and the size and the thickness thereof are the number of electron-emitting devices installed on the electron source substrate 71 and the design shape of each device. When a part of the container is used when the electron source is used, it is appropriately set depending on the conditions for maintaining the container in vacuum.

The m number of X-direction wirings 72 are DX1, DX2,
... DXm, which is a conductive metal or the like formed on the electron source substrate 71 by a vacuum deposition method, a printing method, a sputtering method, or the like. Further, the material, film thickness, wiring width, etc. are appropriately set so that a substantially uniform voltage is supplied to a large number of electron-emitting devices.
The Y-direction wiring 73 is composed of n wirings DY1, DY2, ... DYn, and is formed similarly to the X-direction wiring 72.
An interlayer insulating layer (not shown) is provided between the m number of x-direction wirings 72 and the n number of y-direction wirings 73, and they are electrically separated to form a matrix wiring. Both m and n are positive integers.

The interlayer insulating layer (not shown) is SiO ₂ or the like formed by a vacuum evaporation method, a printing method, a sputtering method or the like, and is desired on the whole surface or a part of the insulating substrate 71 on which the X-direction wiring 72 is formed. The film thickness, the material, and the manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 72 and the Y-direction wiring 73, in particular. In addition, the X-direction wiring 72 and Y
The directional wirings 73 are respectively drawn out as external terminals.

Further, in the same manner as described above, the electron-emitting device 7
4 opposing electrodes (not shown) have m X-direction wirings 72.
And n Y-direction wirings 73 are electrically connected to each other by a connecting wire 75 made of a conductive metal or the like formed by a vacuum deposition method, a printing method, a sputtering method or the like.

Here, the m X-direction wirings 72 and the n Y-direction wirings are provided.
The conductive metal of the element electrode facing the direction wiring 73 and the connection 75 may have the same or a part of the constituent elements, or may be different from each other, and is appropriately selected from the above-mentioned material of the element electrode and the like. It Wirings to these element electrodes may be collectively referred to as element electrodes when the same wiring material is used for the element electrodes. Further, the electron-emitting device is the substrate 71.
Alternatively, it may be formed either on an interlayer insulating layer (not shown).

Further, as will be described later in detail, the X-direction wiring 72 is not shown for applying a scanning signal for scanning a row of electron-emitting devices 74 arranged in the X-direction in accordance with an input signal. Is electrically connected to the scanning signal generating means.

On the other hand, in the Y-direction wiring 73, the respective columns of the electron-emitting devices 74 arranged in the Y-direction are supplied in accordance with the input signal.
It is electrically connected to a modulation signal generating means (not shown) for applying a modulation signal for modulation.

Further, the drive voltage applied to each element of the electron-emitting device is supplied as a difference voltage between the scanning signal applied to the element and the modulation signal.

In the above structure, individual elements can be selected and driven independently with simple matrix wiring.

Next, an image forming apparatus used for display by the electron source having the simple matrix arrangement prepared as described above will be described with reference to FIGS. 8, 9 and 10.
FIG. 8 is a basic configuration diagram of a display panel of the image forming apparatus, FIG. 9 is a fluorescent film, and FIG. 10 is a block diagram of a drive circuit of an example in which the image forming apparatus performs display according to an NTSC television signal. .

In FIG. 8, 71 is an electron source substrate in which the electron-emitting device is manufactured as described above, and 81 is an electron source substrate 7.
1 is fixed to the rear plate, 86 is a face plate in which the fluorescent film 84, the metal back 85 and the like are formed on the inner surface of the glass substrate 83, and 82 is a support frame.
1. Frit glass or the like is applied to the support frame 82 and the face plate 86, and 400 to 5 is applied in the atmosphere or nitrogen.
Enclose by baking at 00 degrees for 10 minutes or more
Make up 8.

In FIG. 8, 74 corresponds to the electron emitting portion in FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to the pair of device electrodes of the electron-emitting device.

The envelope 88 comprises the face plate 86, the support frame 82, and the rear plate 81 as described above, but the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the substrate 71. Therefore, when the substrate 71 itself has a sufficient strength, the separate rear plate 81 is not necessary, and the support frame 82 is directly sealed to the substrate 71, and the face plate 86, the support frame 82, and the substrate 71 are used to surround the enclosure. The container 88 may be configured. Furthermore, by providing a support member (not shown) called a spacer between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure can be configured. .

FIG. 9 shows a fluorescent film. In the case of monochrome, the fluorescent film 84 is made of only a fluorescent material, but in the case of a color fluorescent film, a black conductive material 9 called a black stripe or a black matrix depending on the arrangement of the fluorescent materials.
1 and a phosphor 92. Black stripes,
The purpose of providing the black matrix is to make the mixed colors of the three primary color phosphors, which are required for color display, different from each other by making the portions of the three phosphors 92 differently colored, and to reflect external light on the phosphor film 84. This is to suppress the decrease in contrast due to. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, but is not limited to this as long as it is a material having conductivity and little light transmission and reflection.

As a method for applying the phosphor to the glass substrate 93, a precipitation method or a printing method is used regardless of monochrome or color.

A metal back 85 is usually provided on the inner surface side of the fluorescent film 84. The purpose of the metal back is to improve the brightness by specularly reflecting the light to the inner surface side of the light emitted from the phosphor to the face plate 86 side, to act as an electrode for applying an electron beam acceleration voltage, and This is to protect the phosphor from damage due to collision of negative ions generated in the enclosure. The metal back can be produced by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after producing the fluorescent film, and then depositing A1 by vacuum evaporation or the like.

On the face plate 86, the fluorescent film 8 is further provided.
In order to improve the conductivity of No. 4, a transparent electrode (not shown) may be provided on the outer surface side of the fluorescent film 84.

When performing the above-mentioned sealing, in the case of color, it is necessary to make sufficient alignment because the phosphors of the respective colors and the electron-emitting devices must correspond to each other.

The envelope 88 is connected to an exhaust pipe (not shown) through the exhaust pipe 10
The vacuum degree is set to about minus 7 torr, and sealing is performed. Further, a getter process may be performed in order to maintain the degree of vacuum after the envelope 88 is sealed. This is to heat the getter arranged at a predetermined position (not shown) in the envelope 88 by a heating method such as resistance heating or high frequency heating immediately before or after the envelope 88 is sealed. , A process of forming a vapor deposition film. Getter is usually Ba
Etc. are the main components, and the vacuum degree of 1 × 10 −5 to 1 × 10 −7 [Torr] is maintained by the adsorption action of the vapor deposition film. The steps after forming the electron-emitting device are appropriately set.

Next, referring to the block diagram of FIG. 10, a schematic structure of a drive circuit for performing a television display on a display panel constructed by using an electron source having a simple matrix arrangement based on an NTSC television signal will be described. explain. 101
Is the display panel, and 102 is a scanning circuit, 1
Reference numeral 03 is a control circuit, 104 is a shift register, 105 is a line memory, 106 is a synchronizing signal separation circuit, 107 is a modulation signal generator, and Vx and Va are DC voltage sources.

The functions of the respective parts will be described below. First, the display panel 101 includes terminals Dox1 to Doxm, terminals Doy1 to Doyn, and a high voltage terminal Hv.
It is connected to an external electric circuit via. Of these, the terminals Dox1 to Doxm are sequentially driven with electron sources provided in the display panel, that is, electron-emitting device groups matrix-wired in a matrix of M rows and N columns row by row (N elements). A scanning signal for going is applied.

On the other hand, the terminals Dy1 to Dyn are applied with a modulation signal for controlling the output electron beam of each element of the electron emitting elements of one row selected by the scanning signal. Further, the high-voltage terminal Hv is supplied with a direct-current voltage of, for example, 10 K [V] from the direct-current voltage source Va, which is sufficient to excite the phosphor in the starch beam output from the electron-emitting device. It is an accelerating voltage in order to apply various energies.

Next, the scanning circuit 102 will be described.
The circuit includes M switching elements inside (indicated by S1 to Sm in the figure).
The switching element selects either the output voltage of the DC voltage source Vx or 0 [V] (ground level) and is electrically connected to the terminals Dx1 to Dxm of the display panel 101. Each of the switching elements S1 to Sm has a control signal Tsc output from the control circuit 103.
It works based on an, but in reality
It can be easily constructed by combining switching elements such as ET.

In the present embodiment, the direct-current voltage source Vx emits electrons based on the characteristics (electron emission threshold voltage) of the electron-emitting devices, and the drive voltage applied to the non-scanned devices. It is set to output a constant voltage that is equal to or lower than the threshold voltage.

Further, the control circuit 103 has a function of matching the operations of the respective parts so that an appropriate display is performed on the basis of an image signal inputted from the outside. The synchronization signal Ts sent from the synchronization signal separation circuit 106 described below
Tscan and Ts for each part based on ync
The ft and Tmry control signals are generated.

The synchronizing signal separating circuit 106 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal inputted from the outside, and as is well known, frequency separation (filter). It can be easily constructed by using a circuit. The sync signal separated by the sync signal separation circuit 106 is composed of a vertical sync signal and a horizontal sync signal as is well known, but here, for convenience of explanation, it is shown as a Tsync signal. Meanwhile, the luminance signal component of the image separated from the television signal is DAT for convenience.
Although referred to as an A signal, this signal is input to the shift register 104.

The shift register 104 is for serially / parallel-converting the DATA signals serially input in time series for each line of the image, and is based on the control signal Tsft sent from the control circuit 103. Works. (That is, the control signal Tsft may be rephrased as the shift clock of the shift register 104.) The data of one line of the serial / parallel-converted image (corresponding to the drive data of N electron-emitting devices) is: , Id1 to Idn are output from the shift register 104 as N parallel signals.

The line memory 105 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate in accordance with the control signal Tmry sent from the control circuit 103. The stored contents are output as I′d1 to I′dn and input to the modulation signal generator 107.

The modulation signal generator 107 is a signal source for appropriately driving and modulating each of the electron-emitting devices according to each of the image data I'd1 to I'dn, and its output signal is a terminal Doy1. Or through Doyn to be applied to the electron-emitting device in the display panel 101.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage equal to or higher than Vth is applied.

For a voltage above the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the device. The value of the electron-emission threshold voltage Vth and
The degree of change of the emission current with respect to the applied voltage may change, but in any case, the following can be said.

That is, when a pulsed voltage is applied to this element, for example, no electron emission occurs even if a voltage below the electron emission threshold is applied, but when a voltage above the electron emission threshold is applied, an electron beam is applied. Is output. In that case, firstly, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method, a pulse width modulation method and the like. To implement the voltage modulation method, the modulation signal generator 107 is used. A circuit of a voltage modulation system is used which generates a voltage pulse of a fixed length but appropriately modulates the peak value of the pulse according to the input data.

To implement the pulse width modulation method,
As the modulation signal generator 107, a circuit of a pulse width modulation system is used which generates a voltage pulse having a constant crest value but appropriately modulates the width of the voltage pulse according to the input data.

Through the series of operations described above, the television can be displayed using the display panel 101.
Although not particularly described in the above description, the shift register 104 and the line memory 105 may be of a digital signal type or an analog signal type, and the point is that serial / parallel conversion and storage of image signals are predetermined. It should be done at the speed of.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 106 into a digital signal, but this can be easily done by providing an A / D converter at the output section of 106. Needless to say.
Further, in connection with this, it goes without saying that the circuit used for the modulation signal generator 107 is slightly different depending on whether the output signal of the line memory 105 is a digital signal or an analog signal. That is, in the case of a digital signal,
In the case of the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 107, and an amplification circuit or the like may be added if necessary. Further, in the case of the pulse width modulation method, the modulation signal generator 107, for example, compares the output value of the counter with the counter (counter) that counts the number of waves output by the high-speed oscillator and the oscillator and the output value of the memory. A person skilled in the art can easily configure the circuit by using a circuit in which a device (comparator) is combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator to the driving voltage of the electron-emitting device may be added.

On the other hand, in the case of an analog signal, in the case of the voltage modulation method, the modulation signal generator 107 may be, for example, an amplifier circuit using a well-known operational amplifier or the like, and if necessary, a level shift circuit or the like. May be added. In the case of the pulse width modulation method, for example, a well-known voltage controlled oscillator (VCO) may be used, and an amplifier for amplifying the voltage up to the driving voltage of the electron-emitting device may be added if necessary. Good.

In the image display device suitable for the present invention completed as described above, each of the electron-emitting devices thus has terminals Dox1 to Doxm, Doy1 to Doy outside the container.
n, a voltage is applied to cause electrons to be emitted, and a high voltage is applied to the metal back 85 or a transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam to collide with the fluorescent film 84 to cause excitation / excitation. An image can be displayed by emitting light.

The configuration described above is a schematic configuration necessary for producing a suitable image forming apparatus used for display and the like, and the detailed parts such as the material of each member are not limited to those described above. , Is appropriately selected to suit the application of the image forming apparatus. Further, although the NTSC system is given as an example of the input signal, the input signal is not limited to this, and PAL, SECA
Various methods such as the M method may be used, or a TV signal (for example, a high-definition TV such as the MUSE method) including a number of scanning lines may be used.

Next, the above-mentioned ladder-type electron source and image forming apparatus will be described with reference to FIGS. 11 and 12.

In FIG. 11, 110 is an electron source substrate, 1
11 is an electron-emitting device, 112 is Dx1 to Dx10 are common wirings for wiring the electron-emitting devices. A plurality of electron-emitting devices 111 are arranged on the substrate 110 in parallel in the X direction. (This is called an element row). A plurality of these element rows are arranged to serve as an electron source. It is possible to drive each element row independently by applying a drive voltage appropriately between the common wirings of each element row. That is, a voltage equal to or higher than the electron emission threshold value may be applied to the element row from which the electron beam is desired to be emitted, and a voltage equal to or lower than the electron emission threshold value may be applied to the element row which does not emit the electron beam. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 12 is a diagram showing a display panel structure of an image forming apparatus provided with a ladder-type electron source.
120 is a grid electrode, 121 is a hole through which electrons pass, 122 is Dox1, Dox2. ． ． Doxm external terminals, 123 are G1, G2. ． ． Outer container terminal made of Gn, 124
Is the electron source substrate in which the common wiring between the element rows is the same as described above. The same reference numerals as those in FIGS. 8 and 11 denote the same components. A major difference from the image forming apparatus having the simple matrix arrangement (shown in FIG. 8) is that the electron source substrate 1 is used.
10 and the face plate 86 between the grid electrode 120.
Is equipped with.

A grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 is capable of modulating the electron beam emitted from the electron-emitting device, and allows the electron beam to pass through a striped electrode provided orthogonally to the device rows in a ladder-type arrangement. A circular opening 121 is provided for each of the above. The shape and installation position of the grid are not necessarily those shown in FIG. 12, and a large number of passage openings may be provided in the form of a mesh as openings, and may be provided around or near the electron-emitting device, for example.

The external terminal 122 and the grid external terminal 123 are electrically connected to a control circuit (not shown).

In this image forming apparatus, the modulation signals for one line of the image are simultaneously applied to the grid electrode columns in synchronization with the sequential driving (scanning) of the element rows one column at a time so that each electron beam Control the irradiation to the phosphor and display the image 1
Can be displayed line by line.

Further, according to the concept of the present invention, an image forming apparatus suitable for use as a display device for a television conference system, a computer, etc. as well as a display device for television broadcasting is provided. Furthermore, it can also be used as an image forming apparatus as an optical printer including a photosensitive drum and the like.

[0102]

EXAMPLES Examples of the present invention will be described below.
The present invention is not limited to the following examples.

Example 1 An electron-emitting device of the type shown in FIG. 1 was prepared as an electron-emitting device. FIG. 1A is a plan view of this device, and FIG.
Shows a sectional view. 1A and 1B, symbol 1 is an insulating substrate, 2 and 3 are a pair of device electrodes for applying a voltage to the device, 4 is a thin film including an electron emitting portion,
Reference numeral 5 denotes an electron emitting portion. In the figure, L represents the element electrode spacing between the element electrodes 2 and 3, W represents the element electrode width, d represents the element electrode thickness, and W ′ represents the element width.

A method of manufacturing the electron-emitting device of this embodiment will be described with reference to FIG. A quartz glass substrate was used as the insulating substrate 1, and this was thoroughly washed with an organic solvent, and then the device electrodes 2 and 3 made of Ni were formed on the substrate surface ((a) of FIG. 3). The device electrode spacing L was 3 μm, the device electrode width W was 500 μm, and the thickness d was 1000 Å.

In this example, a palladium colloid solution was used as the metal colloid solution. The method for preparing the palladium colloidal solution will be described below. Sodium protalbate 2
g in 50 cc of water and then add a solution of sodium hydroxide in slight excess, and then add anhydrous palladium chloride P
A solution of 1.6 g of bCl ₂ dissolved in 25 cc of water was gradually added. Then, a reddish brown transparent solution is obtained, and when hydrazine hydrate NH ₂ .NH ₂ .2H ₂ O is added dropwise to the solution, it is bubbled by nitrogen bubbles. After allowing it to stand for about 3 hours to complete the reaction, the resulting black solution was dialyzed to remove excess sodium hydroxide, hydrazine and sodium chloride formed to give stable palladium. An aqueous colloid solution was obtained. This colloidal aqueous solution was added with a palladium weight concentration of 0.
It was adjusted to be 4%.

The above droplets were applied by a bubble jet type ink jet device onto a quartz substrate on which the electrodes 2 and 3 were formed so as to straddle the electrodes 2 and 3, and dried at 80 ° C. for 2 minutes. Next, it was baked at 300 ° C. for 12 minutes to form the inorganic fine particle film 4 (FIG. 3C).

Next, a voltage is applied between the device electrodes 2 and 3 in a vacuum container, and the electron-emitting portion forming thin film 4 is energized (forming) to form an electron-emitting portion 5 (FIG. 3 (d)). FIG. 4 shows the voltage waveform of the forming process.

In this embodiment, the pulse width T1 of the voltage waveform is set to 1
The pulse duration T2 was 10 milliseconds, the peak value of the triangular wave (peak voltage during forming) was 4 V, and the forming treatment was performed for 60 seconds in a vacuum atmosphere of about 1 × 10 ⁻⁶ torr. The electron emitting portion 3 created in this way
Was in a state where fine particles containing palladium element as a main component were dispersed and arranged, and the average particle diameter of the fine particles was 100 angstrom. The electron emission characteristics of the device manufactured as described above were measured by the measurement and evaluation device having the configuration of FIG. The electron-emitting device and the anode electrode 54 are installed in a vacuum device, and the vacuum device is equipped with equipment necessary for the vacuum device such as an exhaust pump and a vacuum gauge (not shown), and is operated under a desired vacuum. The device can be measured and evaluated. In this example, the distance between the anode electrode and the electron-emitting device was 4 mm, the potential of the anode electrode was 1 kV, and the degree of vacuum in the vacuum device at the time of measuring the electron emission characteristics was 1 × 10 ⁻⁶ torr.

A device voltage was applied between the electrodes 2 and 3 of the present electron-emitting device by using the above-described measurement / evaluation apparatus,
When the device current If and the emission current Ie flowing at that time were measured, the current-voltage characteristics as shown in FIG. 6 were obtained. In this device, the emission current Ie rapidly increases from the device voltage of about 7 V, the device current If becomes 0.8 mA and the emission current Ie becomes 0.62 μA at the device voltage of 12 V, and the electron emission efficiency η = Ie / If (%). Was 0.05%.

In the embodiment described above, when forming the electron-emitting portion, the forming process is performed by applying the triangular wave pulse between the electrodes of the element, but the waveform applied between the electrodes of the element is limited to the triangular wave. Alternatively, a desired waveform such as a rectangular wave may be used, and the crest value, the pulse width, the pulse interval, etc. are not limited to the above values, and a desired value may be obtained as long as the electron emitting portion is well formed. You can choose.

Example 2 In a colloidal aqueous solution of palladium obtained in exactly the same manner as in Example 1, the proportion of dimethyl sulfoxide was 4 with respect to water.
The solution was adjusted to 0% by weight to obtain a solution having a palladium weight concentration of 0.4%. By applying this liquid to the substrate by a bubble jet type inkjet device, an electron-emitting device was prepared in the same manner as in Example 1, and it was confirmed that electron emission was observed.

Example 3 An ultrafine particle powder of palladium produced by an in-gas evaporation method was added to a 30% by weight aqueous solution of dimethylsulfoxide to adjust the palladium weight concentration to 0.25% to obtain a solution. By applying this liquid to the substrate by a bubble jet type inkjet device, an electron-emitting device was prepared in the same manner as in Example 1, and it was confirmed that electron emission was observed.

Example 4 In the same manner as in Example 1, droplets of a metal colloid solution were applied to each counter electrode of the substrate (FIG. 7) on which 256 element electrodes in 16 rows and 16 columns and matrix wiring were formed. After applying by a bubble jet type ink jet device and baking, a forming process was performed to obtain an electron source substrate.
A rear plate 81, a support frame 82, and a face plate 86 were connected to this electron source substrate and vacuum-sealed to produce an image forming apparatus according to the conceptual diagram of FIG. Terminals Dox1 to Do
It was possible to display an arbitrary matrix image pattern by applying a predetermined voltage to each element through x16 and terminals Doy1 to Doy16 in a time division manner and applying a high voltage to the metal back through terminal Hv.

Comparative Example 1 An inorganic fine particle film was prepared in the same manner as in Example 1 except that an organic palladium complex was used as a raw material for the thin film. Next, when this was subjected to an energization process (forming process) in a vacuum container, the peak voltage during forming in this comparative example was 5 V, which was about 20% higher than that of the example.

As described above, by using the metal colloid as the raw material of the thin film, the forming power at the time of forming the electron emitting portion can be reduced by 20 to 30%.

[0116]

As described above, if the electron-emitting device is manufactured according to the method of the present invention, it is possible to apply the required amount of the metal colloid solution to the predetermined position, and the solution applying step includes the electron emission. Since it also serves as a two-dimensional patterning step of the thin film for use, material cost and working cost can be reduced. Furthermore, when it is necessary to change the two-dimensional pattern, it is only necessary to change the control system of the liquid applying means, and in general, only the software of the control system can be changed. The change is easier as compared with the manufacturing method using the photolithographic technique which requires the change. Therefore, it can be easily applied to small-quantity, multi-product production.

Further, by using the metal colloid solution, a thin film made of fine particles having a relatively uniform particle size can be formed from the beginning, and thus the formed thin film is uniform and has no unevenness.

Further, since the metal colloid is an inorganic fine particle from the beginning, the forming power at the time of blooming of the electron emitting portion is 20 to 30% as compared with that using the organometallic material.
Can be lowered.

[Brief description of drawings]

FIG. 1 is a schematic plan view and a sectional view showing a configuration of a basic electron-emitting device suitable for the present invention.

FIG. 2 is a schematic diagram showing a configuration of a basic vertical electron-emitting device suitable for the present invention.

FIG. 3 is a first method of manufacturing an electron-emitting device suitable for the present invention.
Here is an example.

FIG. 4 is an example of a voltage waveform of energization forming suitable for the present invention.

FIG. 5 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring electron emission characteristics.

FIG. 6 is an emission current Ie of an electron-emitting device suitable for the present invention.
3 is a typical example of the relationship between the device current If and the device voltage Vf.

FIG. 7 shows an electron source having a simple matrix arrangement.

FIG. 8 is a schematic configuration diagram of a display panel of the image forming apparatus.

FIG. 9 is a fluorescent film.

FIG. 10 is a block diagram of a drive circuit of an example in which an image forming apparatus displays according to an NTSC television signal.

FIG. 11 is a ladder arrangement electron source.

FIG. 12 is a schematic configuration diagram of a display panel of the image forming apparatus.

FIG. 13 is a differential scanning calorimetry curve showing thermal decomposition of a dried organometallic compound solution for preparing an electron-emitting device of the present invention.

FIG. 14 is a schematic view of a conventional electron-emitting device.

[Explanation of symbols]

1: substrate, 2, 3: device electrode, 4: conductive thin film, 5: electron emission part, 21: step forming part, 50: device current If flowing through the conductive thin film 4 between the device electrodes 2, 3 51: a power source for applying a device voltage Vf to the electron-emitting device, 53: a high-voltage power supply for applying a voltage to the anode electrode 54, 54: an emission current emitted from the electron-emitting portion of the device Anode electrode for trapping Ie, 55:
Ammeter for measuring emission current Ie emitted from the electron emission portion 5 of the device, 56: vacuum device, 57: exhaust pump, 71: electron source substrate, 72: X-direction wiring, 73: Y-direction wiring, 74 : Electron-emitting device, 75: connection, 81: rear plate, 82: support frame, 83: glass substrate, 84: fluorescent film, 85: metal back, 86: face plate,
87: high-voltage terminal, 88: envelope, 91: black conductive material, 9
2: phosphor, 93: glass substrate, 101: display panel,
102: scanning circuit, 103: control circuit, 104: shift register, 105: line memory, 106: synchronization signal separation circuit, 107: modulation signal generator, Vx and Va: DC voltage source, 110: electron source substrate, 111 :. Electron-emitting devices, 112: Dx1 to Dx10 are common wirings for wiring the electron-emitting devices, 120: Grid electrodes, 12
1: holes for passing electrons, 122: Dox1, D
ox2 ... Doxm outer container terminal, 123: G1, G2 ... Gn outer container terminal connected to grid electrode 120, 124: electron source substrate.

Claims (16)

[Claims] 01. A method of manufacturing an electron-emitting device having a conductive film having an electron-emitting portion formed between electrodes, wherein the step of forming the conductive film having the electron-emitting portion includes an aqueous solution containing a metal colloid. A step of forming droplets and applying the droplets onto the substrate,
And a step of heating the applied aqueous solution. 2. The method of manufacturing an electron-emitting device according to claim 1, wherein a polar solvent is added to the aqueous solution. 3. The method of manufacturing an electron-emitting device according to claim 1, wherein dimethyl sulfoxide is used as the polar solvent. 4. The method of manufacturing an electron-emitting device according to claim 1, wherein the metal colloid is an aqueous colloid solution produced by a chemical reaction by reduction or an evaporation method in a gas. The metal colloid is Pd, Pt,
Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Z
5. The method for manufacturing an electron-emitting device according to claim 1, wherein the electron-emitting device is any one of n, Sn, Ta, W, and Pb. 06. The Pd produced by the sodium protalpinate method or the gas evaporation method, wherein the metal colloid is produced.
The method for manufacturing an electron-emitting device according to claim 1, wherein the electron-emitting device is a colloid. 07. The metal content of the aqueous solution is 0.
7. The method for manufacturing an electron-emitting device according to claim 1, wherein the amount is in the range of 01% by weight to 5% by weight. 08. The polar solvent concentration of the liquid is 0.00
8. The method for manufacturing an electron-emitting device according to claim 1, wherein the amount is in the range of 5% by weight to 70% by weight. 9. The method of manufacturing an electron-emitting device according to claim 1, wherein the application of the aqueous solution onto the substrate is performed using an inkjet method. 10. The method of manufacturing an electron-emitting device according to claim 1, wherein the inkjet method is a bubble jet method. 11. An electron-emitting device comprising a step of subjecting the conductive film formed by the process according to claim 1 to a forming process for forming an electron-emitting portion. Device manufacturing method. 12. The method of manufacturing an electron-emitting device according to claim 11, wherein the forming process includes a step of energizing the conductive film. 13. The method of manufacturing an electron-emitting device according to claim 1, wherein the electron-emitting device is a surface conduction electron-emitting device. 14. A method of manufacturing an electron source comprising an electron-emitting device and a voltage applying means for the device, wherein the electron-emitting device is manufactured by the method according to any one of claims 1 to 13. A method of manufacturing an electron source, which is characterized by the following. 15. A method of manufacturing a display panel, comprising: an electron source having an electron-emitting device and means for applying a voltage to the device; and a light-emitting body that emits light by receiving electrons emitted from the device, A method for manufacturing a display panel, characterized in that the electron-emitting device is manufactured by the method according to claim 1. 16. An electron source including an electron-emitting device and a voltage applying unit for the device, a light-emitting body that emits light by receiving electrons emitted from the device, and a voltage applied to the device based on an external signal. A method of manufacturing an image forming apparatus, comprising: a drive circuit for controlling the electron emission device, wherein
12. A method for manufacturing an image forming apparatus, characterized by being manufactured by the method according to any one of 12.