JP3397545B2 - Method of manufacturing electron-emitting device, electron-emitting device, display device, and image forming apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electron-emitting device, and more particularly to a method for manufacturing an electron-emitting device formed by using an inkjet method, a display device using the electron-emitting device, and an image forming apparatus. .

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type element (hereinafter abbreviated as FE type element), a metal / insulating layer / metal type element (hereinafter abbreviated as MIM element), a surface conduction type electron emission element (hereinafter abbreviated as SCE element), and the like. is there.

As a report example of the FE type element, WP Dyke &
WW Dolan, “Field emission”, Advance in Electro
n Physics, 8, 89 (1956) and “Physical properties of t
hin-film field emission cathodes with molybdenum c
Ones ”, J. Appl. hys., 47, 5248 (1976), etc. are known. CA Mead,“ Thetun is an example of a reported MIM element.
nel-emission amplifier ”A.Appl. Phys., 32, 646 (19
61) etc. are known. As a report example of the SCE element, M.
I. Elinson, Radio Eng. Electron Phys., 10, (1965).

The SCE element utilizes a phenomenon in which electron emission occurs when a current is passed through a thin film having a small area formed on a substrate in parallel with the film surface. This surface conduction electron-emitting device uses not only the SnO ₂ thin film by Erinson et al. But also an Au thin film [G. Ditt
mer: “Thin Solid Films”, 9, 317 (1972)], In ₂ O ₃
/ SnO ₂ thin film [M. Hartwell and CG
Fonstad: "IEEE Trans. ED Conf.", 519 (1975)], using a carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26,
No. 1, p. 22 (1983)] and the like are reported.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device configuration will be described with reference to FIG. In the figure, 1 is an insulating substrate,
Reference numerals 2 and 3 are a pair of element electrodes for applying a voltage to the element, and 4 is a thin film including an electron emission portion, which is made of a metal oxide thin film formed by sputtering or the like, and is subjected to an energization process called energization forming which will be described later. The emission part 5 is formed.
The element electrode interval L in the figure is set to 0.5 mm to 1 mm, and the element width W'is set to about 0.1 mm. W represents the width of the device electrode, and d represents the thickness of the device electrode. Further, the position and shape of the electron emitting portion 5 are schematic diagrams.

Conventionally, in these surface conduction electron-emitting devices, it has been general that the electron-emitting portion forming thin film is formed in advance by an energization process called forming before the electron-emitting portion is emitted. . That is, the forming means that the electrodes 2 and 3 are applied to both ends of the thin film for forming an electron emitting portion to apply a voltage to energize the thin film for forming an electron emitting portion, thereby locally breaking, deforming or modifying the thin film for forming an electron emitting portion. That is, the electron emitting portion 5 having a high resistance is formed.
There is a case where a crack is generated in a part of the thin film for forming an electron emitting portion due to forming, and electrons are emitted from the vicinity of the crack to form the electron emitting portion 5.

In the surface conduction electron-emitting device which has been subjected to the above-mentioned forming treatment, a voltage is applied to the thin film 4 including the above-mentioned electron-emitting portion to cause a current to flow on the surface of the device, so that electrons are emitted from the above-mentioned electron-emitting portion 5. To release.

As a manufacturing technique for the electron-emitting device as described above, a photolithographic technique according to a conventional semiconductor process has been used.

[0009]

The surface conduction electron-emitting devices described above can be applied to an image forming apparatus by forming a large number of them on a large area substrate, but the conventional photolithographic technique is used. Since the manufacturing method is very expensive, it was necessary to use a lower cost manufacturing method. Therefore, a printing technique is used for forming the electrodes 2 and 3 as a method for forming an element on a large-area substrate, and a droplet of a solution containing an organometallic compound is partially formed on the substrate by an inkjet method for forming the electron emission thin film 4. A method of granting was provided.

An outline of the manufacturing process of the electron-emitting device using the printing technique and the ink jet method will be described with reference to FIG. 1) After the insulating substrate 1 is thoroughly washed with a detergent, pure water and an organic solvent, element electrodes 2 and 3 are formed on the surface of the insulating substrate 1 by a screen printing technique or an offset printing technique (see FIG. a)). 2) A droplet of an aqueous solution containing, for example, dimethyl sulfoxide and an organometallic compound is applied to the gap between the device electrodes 2 and 3 of the insulating substrate so as to straddle both electrodes by using the droplet applying means 21. This substrate is dried and baked to form the electron emission portion forming thin film 4 (FIG. 3D).

However, when the liquid droplets are applied onto the printed electrodes by the ink jet method, there are the following problems.

That is, when the density of the printed electrode is low, the applied droplet may sometimes penetrate into the electrode due to a capillary phenomenon. As a result, the amount and spread of the liquid becomes nonuniform in the gap portion, which causes nonuniform film thickness of the electron emission film after firing, variation in film thickness between elements, and variation in electrical characteristics.

[0013]

An object of the present invention is an object of the invention is to remedy the drawbacks of the prior art, the electron emission film by applying droplets of an aqueous solution containing a metallic compound in the gap portion
A method for producing, preventing penetration into the electrode of the aqueous solution containing the metal compound, little variation in the electron-emitting device obtained thickness and element characteristics and a manufacturing method of an image forming apparatus using these to provide is there.

[0014]

Method of manufacturing an electron-emitting device of the problem-solving means for the invention, also between opposing electrodes provided on the substrate
A step of granting a droplet of the metal compound solution containing an electron emission material Therefore, the heating and baking step in the manufacturing method of the electron-emitting device and a step of forming the electron emitting portion via a process of energization process, the droplets of aqueous solution containing the metal compound
Prior to the attached Azukasuru process, the portion where the aqueous solution is applied on the electrodes, applying a droplet of an aqueous solution containing a water-soluble resin
Then , it has a step of heating.

Still another aspect of the present invention relates to an electron-emitting device formed by such a method of manufacturing an electron-emitting device, a display device using the same, and an image forming apparatus.

The method of manufacturing the electron-emitting device according to the present invention will be described below.

The composition and characteristics of the "aqueous solution containing a water-soluble resin" used in the present invention will be described.

In the present invention, a droplet of an aqueous solution containing a metal compound is
The aqueous solution used prior to the applying step is characterized by containing a water-soluble resin, and the viscosity of the aqueous solution increases due to evaporation of the solvent or polymerization reaction of the water-soluble resin that accompanies heating. This water when applying droplets to the substrate
The initial viscosity of the aqueous solution containing the soluble resin is preferably 2 to 10 centipoise. This is a desirable viscosity when an aqueous solution droplet is applied to a substrate by an inkjet method. The viscosity after heating is desired to be several hundred centipoise or more.

[0019] include the following points as a condition desired for other water soluble resin and an aqueous solution containing it. The aqueous solution whose viscosity has been increased by heating does not lose its viscosity even when cooled to room temperature again. Water soluble resin in aqueous solution with increased viscosity by heating decomposes at the firing temperature below the temperature of the metal compound, leaving no residue in the post-decomposition on a substrate. Therefore, metal salts containing metal elements such as potassium and sodium cannot be used.

[0020] Examples of the above conditions are satisfied water soluble resin, methyl cellulose, hydroxyethyl cellulose,
Examples include carboxymethyl cellulose, dextrin, acrylic acid, methacrylic acid, polyvinyl alcohol, polyethylene glycol and the like .

Next, by the above-mentioned heating which is the main point of the present invention
Fig. 3 shows the composition of the aqueous solution that increases the viscosity and the method of applying it.
Will be explained. The means for applying the aqueous solution to the substrate may be any method as long as droplets can be formed and applied, and particularly, an ink jet which can efficiently generate and apply minute droplets with appropriate accuracy and has good controllability. The method is convenient. This is the best method because microdroplets of about 10 nanograms to several tens of micrograms can be applied to arbitrary positions with good reproducibility.
The application is performed on a part of the electrode. Places to impart is the location and extent of the surrounding matter of 10μm aqueous solution containing metallic compound is applied. The applied aqueous solution permeates into the electrode and is then heated to increase its viscosity, and is retained in the gap in the electrode to fill the gap. The heating temperature is preferably 200 ° C. or lower. After heating, cool the substrate again,
An aqueous solution containing an organometallic compound is applied. The applied aqueous solution is fixed on the electrode and at a predetermined position in the electrode gap without penetrating into the electrode. Further, an electron emission film having a constant film thickness is produced through a baking process.

The metal element of the metal compound used in the present invention includes palladium, platinum, ruthenium, gold,
Titanium, indium, copper, chromium, iron, zinc, tin, tantalum, tungsten, lead and the like can be used. The firing of the metal compound is preferably performed at a firing temperature of 300 to 350 ° C. and a holding time of 10 to 12 minutes.

The liquid applied to the substrate for forming the electron emitting portion conductive film is an aqueous solution containing the above-mentioned organometallic compound and dimethylsulfoxide. A suitable dimethyl sulfoxide concentration range is 0.005% to 70% by weight. When dimethyl sulfoxide is dissolved in water together with the organometallic compound, the solubility of the organometallic compound is improved as compared with the case where dimethyl sulfoxide is not added, and the adhesion stability of droplets of the solution applied to the substrate surface is improved. .
If it is less than 0.005%, almost no effect of addition can be confirmed. When it is 70% or more, the drying of the droplets applied on the substrate is slow and the handling in the process becomes troublesome.

Next, as the basic structure of the surface conduction electron-emitting device formed by the manufacturing method of the present invention, there are two structures, a planar type and a vertical type.

First, the structure of the surface conduction electron-emitting device will be described.

FIG. 1 is a schematic plan view showing the basic structure of a basic surface conduction electron-emitting device suitable for the present invention. The basic structure of a basic surface conduction electron-emitting device suitable for the present invention will be described with reference to FIG.

In FIG. 1, 1 is an insulating substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion. As the insulating substrate 1, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, a soda lime glass substrate laminated with SiO ₂ formed by a sputtering method or the like, and ceramics such as alumina are used. .

The shapes of the element electrode interval (L) and the element electrode length (W) are appropriately designed according to the applied form.

The device electrode spacing (L) is preferably several hundred angstroms to several hundreds of micrometers, and more preferably several micrometers to several tens of micrometers depending on the voltage applied between the device electrodes.

The device electrode length (W) is preferably several micrometers to several hundreds of micrometers depending on the resistance value of the electrodes and electron emission characteristics, and the film thickness d of the device electrodes 2 and 3 is several hundreds. It is a few micrometers from Angstrom.

In addition to the structure shown in FIG.
The conductive thin film 4 and the opposing device electrodes 2 and 3 may be laminated in this order on the above.

The conductive thin film 4 is particularly preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The thickness of the conductive thin film 4 is step coverage to the device electrodes 2 and 3, and between the device electrodes 2 and 3. Is set appropriately according to the resistance value of the above and energization forming conditions to be described later, preferably from several angstroms to several thousand angstroms, particularly preferably from 10 angstroms to 500 angstroms, and the resistance value is from 10 3 to 10 7 The sheet resistance value is the square ohm / □.

The electron emitting portion 5 is a high-resistance crack formed in a part of the conductive thin film 4, and depends on the film thickness, film quality, material of the conductive thin film 4 and the manufacturing method such as energization forming described later. Formed. Further, it may have conductive fine particles having a particle size of several hundred angstroms to several hundred angstroms. The conductive fine particles are the same as some or all of the elements of the material forming the conductive thin film 4. Further, the electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof may contain carbon and a carbon compound.

Next, a vertical surface conduction electron-emitting device which is a surface conduction electron-emitting device having another structure suitable for the present invention will be described.

FIG. 2 is a schematic view showing the structure of a basic vertical type surface conduction electron-emitting device suitable for the present invention.
2, the same reference numerals as those in FIG. 1 are the same.
Reference numeral 21 is a step forming portion. The substrate 1, the device electrodes 2, 3, the conductive thin film 4, and the electron emitting portion 5 are made of the same material as that of the above-mentioned planar surface conduction electron-emitting device, and the step forming portion 21 is formed by the vacuum deposition method. Of the insulating material such as SiO ₂ formed by the printing method, the sputtering method or the like, and the film thickness of the step forming portion 21 corresponds to the element electrode spacing L of the flat surface conduction electron-emitting device described above. The thickness is from several hundreds of angstroms to several tens of micrometers, which is set depending on the manufacturing method of the step forming portion and the voltage applied between the device electrodes, but preferably from several hundreds of angstroms.

Since the conductive thin film 4 is formed after the device electrodes 2 and 3 and the step forming portion 21 are formed, it is laminated on the device electrodes 2 and 3. In addition, the electron emitting portion 5 is shown in FIG.
Although it is shown linearly on the step forming portion 21,
The shape and position are not limited to this, depending on the energization forming conditions and the like.

Various methods can be considered as a method of manufacturing the above-mentioned surface conduction electron-emitting device, and one example thereof is shown in FIG.

The outline of the method of manufacturing the electron-emitting device will be described below in order with reference to FIGS. The same reference numerals as those in FIG. 1 indicate the same members.

FIG. 1 is a schematic view showing an example of the electron-emitting device manufactured by the method of the present invention, and FIG. 3 is a process drawing showing an example of the method of manufacturing the electron-emitting device of the present invention. 1) After the insulating substrate 1 is thoroughly washed with a detergent, pure water and an organic solvent, the element electrodes 2 and 3 are formed on the surface of the insulating substrate 1 by the offset printing technique (FIG. 3).
(A)). 2) A droplet of an aqueous solution containing a water-soluble resin is applied to a part of the electrode using an inkjet method (not shown). The application position is a position where the aqueous solution containing the metal compound is applied and the surrounding area is about 10 μm. 3) The substrate is heated to a temperature at which the liquid applied in 2) increases the viscosity. 4) A droplet of an aqueous solution containing dimethyl sulfoxide and a metal compound is applied to the gap between the device electrodes 2 and 3 on the insulating substrate so as to straddle both electrodes by an inkjet method (not shown). At this time, it is applied on the electrode in a region which does not exceed the region where the aqueous solution of 2) is applied. 5) This substrate is dried and baked to form an electron emission portion forming thin film 4
Are formed (FIG. 3C). The baking causes the viscous solution of 3) to evaporate and decompose, leaving no residue on the substrate after decomposition. 6) Subsequently, an energization process called forming is performed in the vacuum container. When a voltage is applied between the device electrodes 2 and 3 by a power supply (not shown) in a pulsed manner or by a high-speed rising voltage, an electron-emitting portion 5 having a changed structure is formed at the site of the electron-emitting portion forming thin film 4. (Fig. 3
(D)). This electron emitting portion 5 is a thin film 4 for forming an electron emitting portion.
Indicates a site where the structure is changed by being locally destroyed, deformed or altered by the above-mentioned energization treatment. As described above, the present applicants have observed that the electron emitting portion 5 is composed of conductive fine particles.

FIG. 4 shows the voltage waveform of the forming process. In FIG. 4, T1 and T2 are the pulse width and pulse interval of the voltage waveform, where T1 is 1 microsecond to 10 milliseconds, and T2 is T2.
Is 10 microseconds to 100 milliseconds, and the peak value of the triangular wave (peak voltage during forming) is about 4V to 10V. The forming process was performed by applying the above voltage waveform between the electrodes of the device in a vacuum atmosphere for about several tens of seconds.

In the above description, the forming process is performed by applying the triangular wave pulse between the electrodes of the element to form the electron emitting portion, but the waveform applied between the electrodes of the element is not limited to the triangular wave. Alternatively, a desired waveform such as a rectangular wave may be used, and its crest value, pulse width, pulse interval, etc. are not limited to the above values, and a desired value is selected if the electron-emitting portion is formed well. be able to. 7) Subsequently, it is desirable to perform a process called activation on the formed element. The activation referred to here is performed at an appropriate vacuum degree, for example, 10 ⁻⁴ to 10 ⁻⁵ torr.
This is a process of repeatedly applying a pulse voltage similar to the above forming to the element under the degree of vacuum. The activation treatment deposits carbon or a carbon compound derived from a dilute organic compound on the thin film for forming the electron emission portion, and remarkably changes the device current If and the emission current Ie of the electron emission device. The activation may be terminated, for example, when the emission current Ie reaches almost saturation.

The basic characteristics of the electron-emitting device according to the present invention produced by the above device structure and manufacturing method will be described with reference to FIGS.

FIG. 5 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring the electron emission characteristics of the device having the configuration shown in FIG. Device current If and emission current Ie of the electron-emitting device
In the measurement of 1, the power source 31 and the ammeter 30 are connected to the device electrodes 2 and 3, and the anode electrode 34 that connects the power source 33 and the ammeter 32 is arranged above the electron-emitting device. In FIG. 5, 1 is an insulating substrate, 2 and 3 are device electrodes, 4 is a thin film including an electron emitting portion, and 5 is an electron emitting portion. Further, 51 is a power supply for applying a device voltage Vf to the device, 50 is an ammeter for measuring a device current If flowing through the thin film 4 including the electron emitting portion between the device electrodes 2 and 3, 54
Is an anode electrode for capturing the emission current Ie emitted from the electron emission portion of the device, 53 is a high voltage power source for applying a voltage to the anode electrode 54, and 52 is an emission current emitted from the electron emission portion 5 of the device It is an ammeter for measuring Ie.

The electron-emitting device and the anode electrode 54 are installed in a vacuum apparatus, and the vacuum apparatus is equipped with equipment necessary for the vacuum apparatus such as an exhaust pump and a vacuum gauge, which are not shown. The device can be measured and evaluated under vacuum. The voltage of the anode electrode is 1
kV to 10 kV, and the distance H between the anode electrode and the electron-emitting device was measured in the range of 3 mm to 8 mm.

Further, as a result of extensive studies on the characteristics of the surface conduction electron-emitting device according to the present invention described above, the present inventor has found the characteristics of characteristics that are the principle of the present invention. A typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf measured by the measurement / evaluation apparatus shown in FIG.
Shown in. The emission current Ie and the device current If are significantly different in magnitude. In FIG. 6, a linear scale is shown in arbitrary units for qualitative comparison of changes in If and Ie.

This electron-emitting device has three characteristics with respect to the emission current Ie. First, as is clear from FIG. 6, when a device voltage higher than a certain voltage (called a threshold voltage, Vth in FIG. 6) is applied to this device, the emission current Ie rapidly increases, while At the threshold voltage Vth or lower, the emission current Ie is hardly detected. That is, the emission current I
It is a non-linear element having a clear threshold voltage Vth with respect to e. Secondly, since the emission current Ie depends on the device voltage Vf, the emission current Ie can be controlled by the device voltage Vf.
Thirdly, the emitted charges captured by the anode electrode 54 depend on the time for which the device voltage Vf is applied. That is, the amount of charge captured by the anode electrode 54 can be controlled by the time for which the device voltage Vf is applied. Since the electron-emitting device according to the present invention has the above characteristics, it can be expected to be applied to various fields.

FIG. 6 shows an example of a characteristic (called MI characteristic) in which the element current If monotonously increases with respect to the element voltage Vf. In addition to this, the element current If is a voltage with respect to the element voltage Vf. In some cases, a controlled negative resistance characteristic (called VCNR characteristic) is exhibited (not shown). In this case also, the present electron-emitting device has the three characteristic features described above.

Although the basic structure and manufacturing method of the surface conduction electron-emitting device have been described above, according to the idea of the present invention, if the characteristics of the surface conduction electron-emitting device have the above three characteristics. The present invention is not limited to the above-described configuration and the like, and can be used in an image forming apparatus such as an electron source and a display device described later.

Next, an electron source and an image forming apparatus suitable for the present invention will be described. An electron source or an image forming apparatus can be constructed by arranging a plurality of surface conduction electron-emitting devices suitable for the present invention on a substrate.

As the arrangement method on the substrate, for example, a large number of surface conduction electron-emitting devices described in the conventional example are arranged in parallel, both ends of each device are connected by wiring, and rows of electron-emitting devices are arranged. Electrons from the electron-emitting device are arrayed in a large number (called a row direction), and in a direction orthogonal to this wiring (called a column direction) by a control electrode (also called a grid) installed in a space above the electron source. Or a ladder-shaped arrangement for controlling and driving, or n pieces of Y-direction wirings are placed on the m-pieces of X-direction wirings described below via interlayer insulation, and X-shaped wirings are respectively formed on a pair of electron electrodes of the surface conduction electron-emitting device. An arrangement method in which the directional wiring and the Y-direction wiring are connected can be mentioned. This will be referred to as a simple matrix arrangement hereinafter. First, the simple matrix arrangement will be described in detail.

According to the three characteristics of the basic characteristics of the surface conduction electron-emitting device according to the present invention described above, even in the surface conduction electron emission device arranged in a simple matrix,
Electrons emitted from the surface conduction electron-emitting device are controlled to have a peak value and a width of a pulse voltage applied between opposing device electrodes at a threshold voltage or higher. On the other hand, below the threshold voltage, almost no electrons are emitted. According to this characteristic,
Even when a large number of electron-emitting devices are arranged, it is possible to select an arbitrary surface conduction electron-emitting device and control the amount of electron emission by appropriately applying the pulsed voltage to each device. .

The structure of the electron source substrate constructed based on this principle will be described below with reference to FIG. 7 in FIG.
1 is an electron source substrate, 72 is an X-direction wiring, 73 is a Y-direction wiring, 74 is a surface conduction electron-emitting device, and 75 is a connection. The surface conduction electron-emitting device 74 may be either the above-mentioned plane type or vertical type.

In the figure, the electron source substrate 71 is the above-mentioned glass substrate or the like, and the size and the thickness thereof are the number of surface conduction type elements installed on the electron source substrate 71 and the design shape of each element. , And when configuring a part of the container when the electron source is used, it is appropriately set depending on the conditions for maintaining the container in vacuum.

The m number of X-direction wirings 72 are DX1, DX2,
... DXm, which is a conductive metal or the like formed on the electron source substrate 71 by a vacuum deposition method, a printing method, a sputtering method, or the like. Further, the material, film thickness, wiring width, etc. are appropriately set so that a substantially uniform voltage is supplied to a large number of surface conduction elements. The Y-direction wiring 73 is composed of n wirings DY1, DY2, ... DYn, and is formed similarly to the X-direction wiring 72. These m x-direction wirings 72 and n Y-direction wirings 7
An inter-layer insulating layer (not shown) is installed between 3 and electrically isolated to form a matrix wiring. This m, n
Are both positive integers.

The interlayer insulating layer (not shown) is SiO ₂ or the like formed by a vacuum vapor deposition method, a printing method, a sputtering method or the like, and is desired on the entire surface or a part of the insulating substrate 71 on which the X-direction wiring 72 is formed. The film thickness, the material, and the manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 72 and the Y-direction wiring 73, in particular. In addition, the X-direction wiring 72 and Y
The directional wirings 73 are respectively drawn out as external terminals.

Further, in the same manner as described above, the opposing electrodes (not shown) of the surface conduction electron-emitting device 74 have m X-direction wirings 72 and n Y-direction wirings 73, a vacuum evaporation method, a printing method,
Connection 7 made of a conductive metal or the like formed by a sputtering method or the like
5 are electrically connected.

Here, m X-direction wirings 72 and n Y-direction wirings are provided.
The conductive metal of the element electrode facing the direction wiring 73 and the connection 75 may have the same or a part of the constituent elements, or may be different from each other, and is appropriately selected from the above-mentioned material of the element electrode and the like. It Wirings to these element electrodes may be collectively referred to as element electrodes when the same wiring material is used for the element electrodes. The surface conduction electron-emitting device may be formed either on the substrate 71 or on an interlayer insulating layer (not shown).

As will be described later in detail, the surface conduction electron-emitting devices 74 arranged in the X direction are formed on the X-direction wiring 72.
Is electrically connected to a scanning signal generating means (not shown) for applying a scanning signal for scanning the row according to the input signal.

On the other hand, the Y-direction wiring 73 is applied with a modulation signal (not shown) for applying a modulation signal for modulating each row of the surface conduction electron-emitting devices 74 arranged in the Y-direction according to the input signal. It is electrically connected to the signal generating means.

Further, the drive voltage applied to each element of the surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal applied to the element and the modulation signal.

In the above structure, individual elements can be selected and driven independently by using only simple matrix wiring.

Next, an image forming apparatus used for display by the electron source having the simple matrix arrangement created as described above will be described with reference to FIGS. 8, 9 and 10.
FIG. 8 is a basic configuration diagram of a display panel of the image forming apparatus, FIG. 9 is a fluorescent film, and FIG. 10 is a block diagram of a drive circuit of an example in which the image forming apparatus performs display according to an NTSC television signal. .

In FIG. 8, 71 is an electron source substrate in which the electron-emitting device is manufactured as described above, and 81 is an electron source substrate 7.
1 is fixed to the rear plate, 86 is a face plate in which the fluorescent film 84, the metal back 85 and the like are formed on the inner surface of the glass substrate 83, and 82 is a support frame.
1. Frit glass or the like is applied to the support frame 82 and the face plate 86, and 400 to 5 is applied in the atmosphere or nitrogen.
Enclose by baking at 00 degrees for 10 minutes or more
Make up 8.

In FIG. 8, 74 corresponds to the electron emitting portion in FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

As described above, the envelope 88 comprises the face plate 86, the support frame 82 and the rear plate 81. The rear plate 81 is provided mainly for the purpose of reinforcing the strength of the substrate 71. Therefore, when the substrate 71 itself has a sufficient strength, the separate rear plate 81 is not necessary, and the support frame 82 is directly sealed to the substrate 71, and the face plate 86, the support frame 82, and the substrate 71 are used to surround the enclosure. The container 88 may be configured. Furthermore, by providing a support member (not shown) called a spacer between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure can be configured. .

FIG. 9 shows a fluorescent film. In the case of monochrome, the fluorescent film 84 is made of only a fluorescent material, but in the case of a color fluorescent film, a black conductive material 9 called a black stripe or a black matrix depending on the arrangement of the fluorescent materials.
1 and a phosphor 92. Black stripes,
The purpose of providing the black matrix is to make the mixed colors of the three primary color phosphors, which are required for color display, different from each other by making the portions of the three phosphors 92 differently colored, and to reflect external light on the phosphor film 84. This is to suppress the decrease in contrast due to. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, but is not limited to this as long as it is a material having conductivity and little light transmission and reflection.

As a method of applying the phosphor to the glass substrate 93, a precipitation method or a printing method is used regardless of monochrome or color.

A metal back 85 is usually provided on the inner surface side of the fluorescent film 84. The purpose of the metal back is to improve the brightness by specularly reflecting the light to the inner surface side of the light emitted from the phosphor to the face plate 86 side, to act as an electrode for applying an electron beam acceleration voltage, and This is to protect the phosphor from damage due to collision of negative ions generated in the enclosure. The metal back can be produced by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after producing the fluorescent film, and then depositing A1 by vacuum evaporation or the like.

The face plate 86 is further provided with a fluorescent film 8
In order to improve the conductivity of No. 4, a transparent electrode (not shown) may be provided on the outer surface side of the fluorescent film 84.

When performing the above-described sealing, in the case of color, it is necessary to make sufficient alignment because the phosphors of the respective colors and the electron-emitting devices must correspond to each other.

The envelope 88 is connected through an exhaust pipe (not shown) to
The vacuum degree is set to about minus 7 torr, and sealing is performed. Further, a getter process may be performed in order to maintain the degree of vacuum after the envelope 88 is sealed. This is to heat the getter arranged at a predetermined position (not shown) in the envelope 88 by a heating method such as resistance heating or high frequency heating immediately before or after the envelope 88 is sealed. , A process of forming a vapor deposition film. Getter is usually Ba
Etc. are the main components, and the vacuum degree of 1 × 10 −5 to 1 × 10 −7 [Torr] is maintained by the adsorption action of the vapor deposition film. The steps after forming the surface conduction electron-emitting device are appropriately set.

Next, referring to the block diagram of FIG. 10, a schematic configuration of a drive circuit for performing a television display on a display panel constructed by using an electron source having a simple matrix arrangement based on an NTSC system television signal will be described. explain. 101
Is the display panel, and 102 is a scanning circuit, 1
Reference numeral 03 is a control circuit, 104 is a shift register, 105 is a line memory, 106 is a synchronizing signal separation circuit, 107 is a modulation signal generator, and Vx and Va are DC voltage sources.

The functions of the respective parts will be described below. First, the display panel 101 includes terminals Dox1 to Doxm, terminals Doy1 to Doyn, and a high voltage terminal Hv.
It is connected to an external electric circuit via. Among them, the terminals Dox1 to Doxm are each provided with an electron source provided in the display panel, that is, a group of surface conduction electron-emitting devices arranged in a matrix of M rows and N columns (N rows).
A scanning signal for sequentially driving each element) is applied.

On the other hand, a modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Dy1 to Dyn. Further, the high voltage terminal Hv has a DC voltage source Va
For example, a direct current voltage of, for example, 10 K [V] is supplied, which is an accelerating voltage for giving enough energy to excite the phosphor to the electron beam output from the surface conduction electron-emitting device. .

Next, the scanning circuit 102 will be described.
The circuit includes M switching elements inside (indicated by S1 to Sm in the figure).
The switching element selects either the output voltage of the DC voltage source Vx or 0 [V] (ground level) and is electrically connected to the terminals Dx1 to Dxm of the display panel 101. Each of the switching elements S1 to Sm has a control signal Tsc output from the control circuit 103.
It works based on an, but in reality
It can be easily constructed by combining switching elements such as ET.

In the present embodiment, the DC voltage source Vx is a drive voltage applied to an unscanned element based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element. Is set to output a constant voltage such that is equal to or lower than the electron emission threshold voltage.

Further, the control circuit 103 has a function of matching the operations of the respective parts so that an appropriate display is performed based on the image signal inputted from the outside. The synchronization signal Ts sent from the synchronization signal separation circuit 106 described below
Tscan and Ts for each part based on ync
The ft and Tmry control signals are generated.

The synchronizing signal separation circuit 106 is a circuit for separating a synchronizing signal component and a luminance signal component from an externally input NTSC system television signal, and as is well known, frequency separation (filter). It can be easily constructed by using a circuit. The sync signal separated by the sync signal separation circuit 106 is composed of a vertical sync signal and a horizontal sync signal as is well known, but here, for convenience of explanation, it is shown as a Tsync signal. Meanwhile, the luminance signal component of the image separated from the television signal is DAT for convenience.
Although referred to as an A signal, this signal is input to the shift register 104.

The shift register 104 performs serial / parallel conversion of the DATA signals serially input in time series for each line of the image, and is based on the control signal Tsft sent from the control circuit 103. Works. (That is, the control signal Tsft may be rephrased as the shift clock of the shift register 104.) The data of one line of the serial / parallel-converted image (corresponding to the drive data of N electron-emitting devices) is: , Id1 to Idn are output from the shift register 104 as N parallel signals.

The line memory 105 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate according to the control signal Tmry sent from the control circuit 103. The stored contents are output as I′d1 to I′dn and input to the modulation signal generator 107.

The modulation signal generator 107 is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of the image data I'd1 to I'dn.
The output signal is applied to the surface conduction electron-emitting device in the display panel 101 through the terminals Doy1 to Doyn.

As described above, the electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie. That is, as described above, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage equal to or higher than Vth is applied.

For a voltage above the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the device. The value of the electron emission threshold voltage Vth and the value of the electron emission threshold voltage Vth can be changed by changing the material, the structure, and the manufacturing method of the electron emitting device.
The degree of change of the emission current with respect to the applied voltage may change, but in any case, the following can be said. That is, when a pulsed voltage is applied to this element, for example, no electron emission occurs even if a voltage below the electron emission threshold is applied, but an electron beam is output when a voltage above the electron emission threshold is applied. It In that case, firstly, it is possible to control the intensity of the output electron beam by changing the peak value Vm of the pulse. Second, it is possible to control the total amount of charges of the electron beam output by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device according to the input signal, there are a voltage modulation method, a pulse width modulation method and the like. To implement the voltage modulation method, the modulation signal generator 107 is used. A circuit of a voltage modulation system is used which generates a voltage pulse of a fixed length but appropriately modulates the peak value of the pulse according to the input data.

To implement the pulse width modulation method,
As the modulation signal generator 107, a circuit of a pulse width modulation system is used which generates a voltage pulse having a constant crest value but appropriately modulates the width of the voltage pulse according to the input data.

Through the series of operations described above, the television can be displayed using the display panel 101.
Although not particularly described in the above description, the shift register 104 and the line memory 105 may be of a digital signal type or an analog signal type, and the point is that serial / parallel conversion and storage of image signals are predetermined. It should be done at the speed of.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 106 into a digital signal, but this can be easily done by providing an A / D converter at the output section of 106. Needless to say.
Further, in connection with this, it goes without saying that the circuit used for the modulation signal generator 107 is slightly different depending on whether the output signal of the line memory 105 is a digital signal or an analog signal. That is, in the case of a digital signal,
In the case of the voltage modulation method, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 107, and an amplification circuit or the like may be added if necessary. Further, in the case of the pulse width modulation method, the modulation signal generator 107, for example, compares the output value of the counter with the counter (counter) that counts the number of waves output by the high-speed oscillator and the oscillator and the output value of the memory. A person skilled in the art can easily configure the circuit by using a circuit in which a device (comparator) is combined. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator to the drive voltage of the surface conduction electron-emitting device may be added.

On the other hand, in the case of an analog signal, in the case of the voltage modulation method, the modulation signal generator 107 may be, for example, an amplifier circuit using a well-known operational amplifier or the like, and if necessary, a level shift circuit or the like. May be added. In the case of the pulse width modulation method, for example, a well-known voltage control type oscillation circuit (VCO) may be used, and an amplifier for amplifying the voltage to the drive voltage of the surface conduction electron-emitting device, if necessary. May be added.

In the image display device suitable for the present invention completed as described above, the terminals outside the container Dox1 to Doxm, Doy1 to Doy are thus provided in each electron-emitting device.
n, a voltage is applied to cause electrons to be emitted, and a high voltage is applied to the metal back 85 or a transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam to collide with the fluorescent film 84 to cause excitation / excitation. An image can be displayed by emitting light. The configuration described above is a schematic configuration necessary for manufacturing a suitable image forming apparatus used for display and the like, and the detailed parts such as the material of each member are not limited to the above contents. Select as appropriate to suit the application of the device. Also, as an input signal example, NTS
Although the C method is given, the PAL and S are not limited to this.
Various methods such as ECAM method may be used, and a TV signal (for example, MUSE) including a number of scanning lines may be used.
A high-definition TV) system such as a system may be used.

Next, the above-mentioned ladder-type electron source and image forming apparatus will be described with reference to FIGS. 11 and 12.

In FIG. 11, 110 is an electron source substrate, 1
11 is an electron-emitting device, 112 is Dx1 to Dx10 are common wirings for wiring the electron-emitting devices. A plurality of electron-emitting devices 111 are arranged on the substrate 110 in parallel in the X direction. (This is called an element row). A plurality of these element rows are arranged to serve as an electron source. It is possible to drive each element row independently by applying a drive voltage appropriately between the common wirings of each element row. That is, a voltage equal to or higher than the electron emission threshold value may be applied to the element row from which the electron beam is desired to be emitted, and a voltage equal to or lower than the electron emission threshold value may be applied to the element row not to emit the electron beam. Further, the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 12 is a diagram showing a display panel structure of an image forming apparatus provided with a ladder-type electron source.
120 is a grid electrode, 121 is a hole through which electrons pass, 122 is Dox1, Dox2. ． ． Doxm external terminals, 123 are G1, G2. ． ． Outer container terminal made of Gn, 124
Is the electron source substrate in which the common wiring between the element rows is the same as described above. The same reference numerals as those in FIGS. 8 and 11 denote the same components. A major difference from the image forming apparatus having the simple matrix arrangement (shown in FIG. 8) is that the electron source substrate 1 is used.
10 and the face plate 86 between the grid electrode 120.
Is equipped with.

A grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 is capable of modulating the electron beam emitted from the surface conduction electron-emitting device, and passes the electron beam through a striped electrode provided orthogonal to the ladder-shaped element rows. A circular opening 121 is provided for each element. The shape and installation position of the grid do not have to be as shown in FIG. 12,
A large number of passage openings may be provided in a mesh shape as openings, and may be provided around or near the surface conduction electron-emitting device.

The external terminal 122 and the grid external terminal 123 are electrically connected to a control circuit (not shown).

In this image forming apparatus, a modulation signal for one line of an image is simultaneously applied to the grid electrode column in synchronization with the sequential driving (scanning) of the element rows one column at a time, so that each electron beam Control the irradiation to the phosphor and display the image 1
Can be displayed line by line.

Further, according to the idea of the present invention, an image forming apparatus suitable as a display device for a television conference system, a computer, etc. as well as a display device for television broadcasting is provided. Furthermore, it can also be used as an image forming apparatus as an optical printer including a photosensitive drum and the like.

[0097]

EXAMPLES Examples of the present invention will be shown below. Example 1 An electron-emitting device of the type shown in FIG. 1 was prepared as an electron-emitting device. FIG. 1A is a plan view of this device, and FIG.
Shows a sectional view. 1A and 1B, symbol 1 is an insulating substrate, 2 and 3 are a pair of device electrodes for applying a voltage to the device, 4 is a thin film including an electron emitting portion,
Reference numeral 5 indicates an electron emitting portion. In the figure, L represents the element electrode spacing between the element electrodes 2 and 3, W represents the element electrode width, d represents the element electrode thickness, and W ′ represents the element width.

A method of manufacturing the electron-emitting device of this embodiment will be described with reference to FIG. A quartz glass substrate was used as the insulating substrate 1, which was thoroughly washed with an organic solvent, and then Au element electrodes 2 and 3 were formed on the substrate surface by screen printing (FIG. 3A). The element electrode interval L is 30 microns, the element electrode width W is 500 microns, and the thickness d is 1
000 angstrom.

Methylcellulose was added to water to give a solution viscosity of 5
The substrate adjusted to centipoise was applied to a part of the electrodes 2 and 3 by a bubble jet type inkjet device ((b) of FIG. 3), and then the substrate was heated at 150 ° C. for 15 minutes. After that, the substrate was cooled to room temperature again.

An aqueous solution containing 40% by weight of dimethylsulfoxide was prepared, and palladium acetate was dissolved therein to a concentration of 0.4% by weight of palladium to obtain a dark red solution. A part of this liquid was put in another container and depressurized to evaporate the solvent until a reddish brown paste was formed. Droplets of the above dark red solution were applied by a bubble jet type ink jet device so as to straddle the electrodes 2 and 3 on a quartz substrate on which the electrodes 2 and 3 were formed, and dried at 80 ° C. for 2 minutes. As a result of applying the droplets to a plurality of elements, the applied droplets could be applied with good reproducibility without penetrating the electrode. Next, it was baked at 350 ° C. for 12 minutes to form the inorganic fine particle film 4 (FIG. 3C). The film thickness of the electron emission part forming thin film 4 was 100 angstroms on average, and the sheet resistance was 5 × 10 ⁴ Ω / □.

Next, a voltage is applied between the device electrodes 2 and 3 in a vacuum container to energize (form) the electron emission part forming thin film 4 to form an electron emission part 5 (see FIG. 3 (d)). FIG. 4 shows the voltage waveform of the forming process.

In this embodiment, the pulse width T1 of the voltage waveform is set to 1
Milliseconds, pulse interval T2 was 10 milliseconds, the peak value of the triangular wave (peak voltage during forming) was 5 V, and the forming treatment was performed for 60 seconds in a vacuum atmosphere of about 1 × 10 ⁻⁶ torr. The electron-emitting portion 5 created in this way
In the state where the fine particles containing the palladium element as a main component were dispersed and arranged.

When 100 devices were prepared as described above, the average particle size of the fine particles was 50 Å in all cases. The variation in the film thickness of the fine particle film 21 was 80% of that in Comparative Example 1. Further, the electron emission characteristics of each element were measured by the measurement and evaluation device having the configuration of FIG.

The present electron-emitting device and the anode electrode 54 are arranged in a vacuum apparatus, and the vacuum apparatus is equipped with equipment necessary for the vacuum apparatus such as an exhaust pump and a vacuum gauge, which are not shown, and is desired. The device can be measured and evaluated under vacuum. In this example, the distance between the anode electrode and the electron-emitting device was 4 mm, the potential of the anode electrode was 1 kV, and the degree of vacuum in the vacuum device at the time of measuring the electron emission characteristics was 1 × 10 ⁻⁶ torr.

A device voltage was applied between the electrodes 2 and 3 with respect to 100 devices of the present electron-emitting device using the above-described measurement / evaluation apparatus, and the device current If and the emission current Ie flowing at that time were measured. Also obtained the current-voltage characteristic as shown in FIG. As a result of measuring the emission current Ie at a device voltage of 12 V, an average of 0.2 μA and an electron emission efficiency of 0.05% were obtained. Moreover, the uniformity between the elements was good, and the variation in Ie between the elements was 5%, which was a good value.

In the embodiment described above, when forming the electron-emitting portion, the triangular wave pulse is applied between the electrodes of the element to perform the forming process, but the waveform applied between the electrodes of the element is limited to the triangular wave. Alternatively, a desired waveform such as a rectangular wave may be used, and the crest value, the pulse width, the pulse interval, etc. are not limited to the above values, and the desired value may be obtained as long as the electron emitting portion is well formed. Can be selected. Example 2 A solution prepared by adding polyvinyl alcohol to water and adjusting the solution viscosity to 5 centipoise was applied to a part of the electrode by a bubble jet type inkjet device, heated at 100 ° C. for 10 minutes, and then cooled to room temperature. After that, 100 electron-emitting devices were prepared in the same manner as in Example 1. The variation in film thickness of the fine particle film was 90% of that in Comparative Example 1. Further, when a device voltage was applied between the electrodes 2 and 3 of the present electron-emitting device by using the measurement / evaluation apparatus shown in Example 1, a device voltage of 12
The average electron emission at V was 0.2 μA, and the average electron emission efficiency was 0.05%. The variation in Ie between the elements was 6%. Example 3 An aqueous solution containing methylcellulose was applied to each counter electrode of a substrate (FIG. 7) on which 256 element electrodes in 16 rows and 16 columns and matrix wiring were formed, and heating was performed in the same manner as in Example 1. After recooling, a droplet of an organometallic compound solution is applied by a bubble jet type inkjet device,
After firing, a forming process was performed to obtain an electron source substrate.

A rear plate 81, a support frame 82, and a face plate 86 were connected to this electron source substrate and vacuum-sealed to produce an image forming apparatus according to the conceptual diagram of FIG. Terminal Dox
It was possible to display an arbitrary matrix image pattern by applying a predetermined voltage to each element through 1 to Dox16 and terminals Doy1 to Doy16 in a time division manner and applying a high voltage to the metal back through the terminal Hv. Comparative Example 1 A quartz glass substrate was used as an insulating substrate, which was washed with an organic solvent and then A was printed on the substrate surface by offset printing.
A u element electrode was formed. The device electrode spacing, width, and thickness are the same as those of the device shown in the first embodiment.

An aqueous solution containing 40% by weight of dimethyl sulfoxide was prepared, and palladium acetate was dissolved therein to a concentration of 0.4% by weight of palladium to obtain a dark red solution. A part of this liquid was put in another container and depressurized to evaporate the solvent until a reddish brown paste was formed. Droplets of the above dark red solution were applied by a bubble jet type ink jet device so as to straddle the electrodes on a quartz substrate on which the electrodes were formed, and dried at 80 ° C. for 2 minutes. Then, it was baked at 350 ° C. for 12 minutes to form an inorganic fine particle film 4. When droplets were applied to multiple elements, the phenomenon that droplets penetrated into the electrode occurred in some elements, and the thickness of these elements after firing became thinner than other elements. . The variation in film thickness between the elements was larger than those in Examples 1 to 3.

Then, a forming process was performed in the same manner as in Example 1.

100 devices were produced as described above, and the electron emission characteristics of each device were measured by the measurement and evaluation apparatus having the configuration of FIG. As a result, the average emission current at a device voltage of 12 V was 0.2 μA, and the average electron emission efficiency was 0.
Obtained 05%. In addition, the variation of Ie between the elements is the same as in Example 1.
It became larger than the case of ~ 3.

[0111]

As described in the foregoing, if making the electron-emitting device in accordance with the method of the present invention, it becomes possible to prevent the penetration into the electrode of an aqueous solution containing a metallic compound, resulting in electron emission film It is possible to obtain an electron-emitting device with less variation in film thickness and device characteristics.

[Brief description of drawings]

FIG. 1 is a schematic plan view and a sectional view showing the structure of a basic surface conduction electron-emitting device suitable for the present invention.

FIG. 2 is a schematic diagram showing the configuration of a basic vertical surface conduction electron-emitting device suitable for the present invention.

FIG. 3 is an example of a method for manufacturing a surface conduction electron-emitting device suitable for the present invention.

FIG. 4 is an example of a voltage waveform of energization forming suitable for the present invention.

FIG. 5 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring electron emission characteristics.

FIG. 6 is a typical example of a relationship between an emission current Ie and a device current If and a device voltage Vf of a surface conduction electron-emitting device suitable for the present invention.

FIG. 7: Electron source with simple matrix arrangement

FIG. 8 is a schematic configuration diagram of a display panel of the image forming apparatus.

FIG. 9 Fluorescent film

FIG. 10 is a block diagram of a drive circuit of an example in which the image forming apparatus displays according to an NTSC television signal.

FIG. 11: Ladder arrangement electron source

FIG. 12 is a schematic configuration diagram of a display panel of the image forming apparatus.

FIG. 13 is a schematic diagram of a conventional electron-emitting device.

[Explanation of symbols]

1: substrate, 2, 3: device electrode, 4: conductive thin film, 5: electron emission part, 21: step forming part, 50: device current If flowing through the conductive thin film 4 between the device electrodes 2, 3 51: a power source for applying a device voltage Vf to the electron-emitting device, 53: a high-voltage power supply for applying a voltage to the anode electrode 54, 54: an emission current emitted from the electron-emitting portion of the device Anode electrode for trapping Ie, 55:
Ammeter for measuring the emission current Ie emitted from the electron emission portion 5 of the device, 56: vacuum device, 57: exhaust pump, 71: electron source substrate, 72: X direction wiring, 73: Y direction wiring, 74 : Surface conduction electron-emitting device, 75: connection,
81: rear plate, 82: support frame, 83: glass substrate, 84: fluorescent film, 85: metal back, 86: face plate, 87: high voltage terminal, 88: envelope, 91: black conductive material, 92: fluorescent Body, 93: glass substrate, 101:
Display panel, 102: scanning circuit, 103: control circuit, 1
04: shift register, 105: line memory, 10
6: synchronization signal separation circuit, 107: modulation signal generator, Vx
And Va: DC voltage source, 110: electron source substrate, 11
1: electron-emitting device, 112: Dx1 to Dx10 are common wiring for wiring the electron-emitting device, 120: grid electrode, 121: holes through which electrons pass, 12
2: Dox1, Dox2 ... Outer container terminals made of Doxm, 123: G1 and G connected to the grid electrode 120
2 ... Container outer terminal made of Gn, 124: electron source substrate.

Claims (7)

(57) [Claims] 1. A or between opposing electrodes provided on the substrate
Therefore, a droplet of an aqueous solution of a metal compound containing an electron emitting material is formed.
A step of granting a firing step in the manufacturing method of the electron-emitting device and a step of forming the electron emitting portion via a process of energization process, the step of granting the droplets of aqueous solution containing the metal compound A method of manufacturing an electron-emitting device, comprising the step of previously applying a droplet of an aqueous solution containing a water-soluble resin to a portion of the electrode to which the aqueous solution is applied and heating the same. 2. The method for manufacturing an electron-emitting device according to claim 1, wherein the electrode is manufactured by an offset printing method. 3. The method of claim 2 comprising the water-soluble resin
The method for producing an electron-emitting device , wherein the aqueous solution does not contain a metal element, and the water-soluble resin decomposes at a temperature equal to or lower than the firing temperature of the metal compound. 4. The method according to claim 1, wherein the metal compound is included.
Droplets of the aqueous solution and the aqueous solution containing the water-soluble resin.
A method of manufacturing an electron-emitting device, characterized in that the two types of droplet applying means for applying the droplets are of an inkjet type. 5. The method for manufacturing an electron-emitting device according to claim 4, wherein the ink jet method is a bubble jet method. 6. A method of manufacturing a display device comprising an electron-emitting device and a light-emitting body which emits light when irradiated with an electron beam emitted from the electron-emitting device, wherein the electron-emitting device is characterized by:
A method for manufacturing a display element , which is manufactured by the method according to any one of 1 to 5 . 7. An image is formed by applying a high voltage between an electron-emitting device that emits electrons by applying a voltage to an electron-emitting material provided between opposed electrodes and a fluorescent plate to cause accelerated electrons to collide with the fluorescent plate. In the method of manufacturing the image forming apparatus for displaying,
The electron-emitting device according to any one of claims 1 to 5.
Preparation of the image forming apparatus characterized in that it is manufactured by the law
Way .