JPH08269727A - Electroless palladium plating solution and plating method - Google Patents
Electroless palladium plating solution and plating methodInfo
- Publication number
- JPH08269727A JPH08269727A JP9777995A JP9777995A JPH08269727A JP H08269727 A JPH08269727 A JP H08269727A JP 9777995 A JP9777995 A JP 9777995A JP 9777995 A JP9777995 A JP 9777995A JP H08269727 A JPH08269727 A JP H08269727A
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- plating
- palladium
- plating solution
- electroless
- inorganic sulfur
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子部品等へのボンデ
ィング用めっきなどとして好適に用いられる無電解パラ
ジウムめっき液及びめっき方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless palladium plating solution and a plating method which are preferably used as plating for bonding electronic parts and the like.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】従来、
電子機器の接合技術としては、無電解ニッケルめっき／
無電解金めっきプロセスが主流であるが、最近において
は電子部品等をコストダウンさせることが要望され、こ
のためコストの高い無電解金めっきに代えて無電解パラ
ジウムめっきが注目されるようになってきた。2. Description of the Related Art Conventionally, the problems to be solved by the invention
Electroless nickel plating /
The electroless gold plating process is the mainstream, but recently, it has been demanded to reduce the cost of electronic parts etc. Therefore, electroless palladium plating has been attracting attention in place of the costly electroless gold plating. It was
【０００３】このため、種々の無電解パラジウムめっき
液が提案されている（特開昭６２−１２４２８０号、特
開平１−２６８８７７号、特開平５−２１４５５１号公
報）。For this reason, various electroless palladium plating solutions have been proposed (JP-A-62-124280, JP-A-1-268877, JP-A-5-214551).
【０００４】しかし、従来の無電解パラジウムめっき皮
膜はクラックが発生し易く、このため半田濡れ性及びボ
ンディング性が金めっき皮膜に比べて劣るという問題が
あった。また、従来の無電解パラジウムめっき液は浴の
安定性に劣り、更に析出速度も遅いという問題もあっ
た。However, the conventional electroless palladium plating film has a problem that cracks are likely to occur and therefore the solder wettability and bonding property are inferior to those of the gold plating film. Further, the conventional electroless palladium plating solutions have problems that the bath stability is poor and the deposition rate is slow.
【０００５】本発明は上記事情に鑑みなされたもので、
浴安定性に優れ、析出速度も大きい上、クラックの発生
し難いめっき皮膜を与える無電解パラジウムめっき液及
びめっき方法を提供することを目的とする。The present invention has been made in view of the above circumstances.
An object of the present invention is to provide an electroless palladium plating solution and a plating method which provide a plating film which is excellent in bath stability, has a high deposition rate, and is resistant to cracks.
【０００６】[0006]
【課題を解決するための手段及び作用】本発明者は、上
記目的を達成するため鋭意検討を行った結果、パラジウ
ム化合物と、次亜リン酸及びその塩、亜リン酸及びその
塩並びに水素化ホウ素化物及びアミンボラン類から選ば
れる還元剤と、アンモニア及びアミン類から選ばれる錯
化剤とを含有する無電解パラジウムめっき液に、チオ硫
酸塩、ポリチオン酸塩、亜二チオン酸塩、亜硫酸塩及び
二チオン酸塩から選ばれる無機硫黄化合物を添加するこ
とにより、無電解パラジウムめっき液の安定性が顕著に
向上する上、析出速度も向上し、また得られた無電解パ
ラジウムめっき皮膜にクラックが生じ難く、このため半
田濡れ性、ボンディング性に優れためっき皮膜を形成し
得ることを見い出し、本発明をなすに至ったものであ
る。Means for Solving the Problems and Actions The inventors of the present invention have conducted extensive studies to achieve the above object, and as a result, have found that palladium compounds, hypophosphorous acid and salts thereof, phosphorous acid and salts thereof, and hydrogenation. A reducing agent selected from boride and amine boranes, and an electroless palladium plating solution containing a complexing agent selected from ammonia and amines, thiosulfate, polythionate, dithionite, sulfite and By adding an inorganic sulfur compound selected from dithionate, the stability of the electroless palladium plating solution is significantly improved, the deposition rate is also improved, and cracks occur in the obtained electroless palladium plating film. It has been found that it is difficult to form a plating film having excellent solder wettability and bondability, and thus the present invention has been accomplished.
【０００７】以下、本発明につき更に詳しく説明する
と、本発明の無電解パラジウムめっき液は、パラジウム
化合物と、次亜リン酸及びその塩、亜リン酸及びその塩
並びに水素化ホウ素化物及びアミンボラン類から選ばれ
る還元剤と、アンモニア及びアミン類から選ばれる錯化
剤とを含有する無電解パラジウムめっき液に対し、無機
硫黄化合物を添加してなるものである。The present invention will be described in more detail below. The electroless palladium plating solution of the present invention comprises a palladium compound, hypophosphorous acid and its salt, phosphorous acid and its salt, borohydride and amine boranes. An inorganic sulfur compound is added to an electroless palladium plating solution containing a reducing agent selected and a complexing agent selected from ammonia and amines.
【０００８】ここで、パラジウム化合物としては、水溶
性のものであればいずれのものでもよく、例えば塩化パ
ラジウム、硫酸パラジウム、酢酸パラジウムなどを用い
ることができる。その使用量は、０．００１〜０．５ｍ
ｏｌ／ｌ、特に０．０１〜０．１ｍｏｌ／ｌとすること
が好ましい。少なすぎるとめっき速度が低下し、多すぎ
ると皮膜物性が低下するおそれがある。Any palladium compound may be used as long as it is water-soluble, and for example, palladium chloride, palladium sulfate, palladium acetate or the like can be used. The usage amount is 0.001 to 0.5 m
It is preferably ol / l, particularly 0.01 to 0.1 mol / l. If it is too small, the plating rate will decrease, and if it is too large, the physical properties of the coating may deteriorate.
【０００９】また、還元剤としては、上述したように、
次亜リン酸、次亜リン酸ナトリウム等の次亜リン酸塩、
亜リン酸、亜リン酸ナトリウム等の亜リン酸塩、水素化
ホウ素ナトリウム等の水素化ホウ素化物、ジメチルアミ
ンボラン、ジエチルアミンボラン等のアミンボラン類の
いずれかを使用する。その使用量は０．００１〜５ｍｏ
ｌ／ｌ、特に０．２〜２ｍｏｌ／ｌとすることが好まし
い。少なすぎると析出速度が低下し、多すぎると浴が不
安定化するおそれがある。As the reducing agent, as described above,
Hypophosphite, hypophosphite such as sodium hypophosphite,
Any of phosphite, phosphites such as sodium phosphite, borohydrides such as sodium borohydride, and amine boranes such as dimethylamine borane and diethylamine borane are used. The usage is 0.001-5mo
It is preferably 1 / l, particularly 0.2 to 2 mol / l. If it is too small, the deposition rate will decrease, and if it is too large, the bath may become unstable.
【００１０】更に、錯化剤としてアンモニアやアミン類
を使用する。アミン類としては、メチルアミン、ジメチ
ルアミン、トリメチルアミン、ベンジルアミン、メチレ
ンジアミン、エチレンジアミン、テトラメチレンジアミ
ン、ジエチレントリアミン、ＥＤＴＡ、ＥＤＴＡナトリ
ウム、Ｎ−ヒドロキシエチレンジアミン三酢酸及びその
塩、グリシン、Ｎ−メチルグリシン、ビタントイン酸、
イミダゾリン、２−メチル−２−イミダゾリンなどが挙
げられ、これらの１種を単独で又は２種以上を併用して
使用することができる。これらの中では、特にジメチル
アミン、エチレンジアミン、Ｎ−ヒドロキシエチレンジ
アミン三酢酸が好ましい。その使用量は０．００１〜１
０ｍｏｌ／ｌ、特に０．１〜２ｍｏｌ／ｌとすることが
好ましい。少なすぎると浴の安定性が低下し、多すぎる
とめっき速度が低下する。Further, ammonia and amines are used as complexing agents. Examples of the amines include methylamine, dimethylamine, trimethylamine, benzylamine, methylenediamine, ethylenediamine, tetramethylenediamine, diethylenetriamine, EDTA, EDTA sodium, N-hydroxyethylenediaminetriacetic acid and its salts, glycine, N-methylglycine, bitantoin. acid,
Examples thereof include imidazoline and 2-methyl-2-imidazoline, and these can be used alone or in combination of two or more. Of these, dimethylamine, ethylenediamine, and N-hydroxyethylenediaminetriacetic acid are particularly preferable. The usage is 0.001-1
It is preferably 0 mol / l, particularly preferably 0.1 to 2 mol / l. If it is too small, the stability of the bath will decrease, and if it is too large, the plating rate will decrease.
【００１１】本発明の無電解パラジウムめっき液には、
上記成分に加えてチオ硫酸塩（２価の無機硫黄化合
物）、ポリチオン酸塩（例えばＯ3Ｓ−Ｓｎ−ＳＯ3にお
いて、ｎ＝１〜４の無機硫黄化合物）、亜二チオン酸塩
（３価の無機硫黄化合物）、亜硫酸塩（４価の無機硫黄
化合物）、二チオン酸塩（５価の無機硫黄化合物）から
選ばれる無機硫黄化合物の１種又は２種以上を添加する
もので、これによりめっき液の安定性、析出速度、めっ
き皮膜特性が顕著に向上するものである。なお、上記塩
としてはナトリウム塩等の水溶性塩が使用される。The electroless palladium plating solution of the present invention contains
In addition to the above components, thiosulfates (divalent inorganic sulfur compounds), polythionates (for example, in O 3 S—Sn—SO 3 , n = 1 to 4 inorganic sulfur compounds), dithionite (3 Valent inorganic sulfur compound), sulfite (tetravalent inorganic sulfur compound), dithionate (pentavalent inorganic sulfur compound) selected from one or more inorganic sulfur compounds, This significantly improves the stability of the plating solution, the deposition rate, and the plating film characteristics. A water-soluble salt such as sodium salt is used as the salt.
【００１２】上記無機硫黄化合物の添加量は０．０１〜
１０ｍｍｏｌ（ミリモル）／ｌ、特に０．１〜５ｍｍｏ
ｌ／ｌであり、この量が少なすぎると、上述した効果が
十分に達成されず、また多すぎるとめっき速度が低下す
る傾向にある。The amount of the inorganic sulfur compound added is 0.01 to
10 mmol / mole, especially 0.1-5 mmo
If the amount is too small, the above-mentioned effects cannot be sufficiently achieved, and if the amount is too large, the plating rate tends to decrease.
【００１３】本発明のめっき液には、更にめっき皮膜の
均一性向上を目的として非イオン性、カチオン性、アニ
オン性、両性の各種界面活性剤を添加することができ
る。この場合、その添加量は０．０１〜１０ｇ／ｌとす
ることができる。Various nonionic, cationic, anionic and amphoteric surfactants may be added to the plating solution of the present invention for the purpose of improving the uniformity of the plating film. In this case, the added amount can be 0.01 to 10 g / l.
【００１４】本発明のめっき液はｐＨ４〜１０、特に６
〜８であることが好ましく、ｐＨが低すぎると浴の安定
性が低下し、ｐＨが高すぎるとめっき皮膜にクラックが
生じやすくなる。The plating solution of the present invention has a pH of 4 to 10, especially 6
It is preferably -8, and if the pH is too low, the stability of the bath will be reduced, and if the pH is too high, cracks will tend to occur in the plating film.
【００１５】上述した無電解パラジウムめっき液は電子
部品のボンディング用めっきなどとして好適に使用され
るが、これを用いてめっきを行う場合は、このめっき液
中に被めっき物を浸漬すればよい。被めっき液の材質と
しては、鉄、コバルト、ニッケル、銅、錫、銀、金、白
金、パラジウムなどやこれらの合金といった無電解パラ
ジウムめっき皮膜の還元析出に触媒性のある金属を挙げ
ることができる。また、触媒性のない金属であれば、い
わゆるガルバニックイニシエーションを行う（被めっき
物に対し還元析出が生じるまで電気を与える）か、又は
上記触媒活性のある金属のめっき皮膜を形成してからめ
っきを行えばよく、またガラス、セラミックス、プラス
チック等、或いは上記触媒活性のない金属などに対して
は常法に従ってパラジウム核などの金属触媒核を付着さ
せた後にめっきを行うことができる。The above-mentioned electroless palladium plating solution is suitably used as a plating for bonding electronic parts, etc. When plating is performed using this, the object to be plated may be immersed in this plating solution. Examples of the material of the liquid to be plated include iron, cobalt, nickel, copper, tin, silver, gold, platinum, palladium and the like, and alloys thereof, which have catalytic properties for reducing and depositing the electroless palladium plating film. . If the metal has no catalytic property, so-called galvanic initiation is performed (electricity is applied to the object to be plated until reduction precipitation occurs), or plating is performed after forming a plating film of the above-mentioned catalytically active metal. It suffices to carry out, and for glass, ceramics, plastics, or the like, or metals having no catalytic activity as described above, plating can be carried out after attaching metal catalyst nuclei such as palladium nuclei according to a conventional method.
【００１６】なお、めっき温度は３０〜８０℃、特に５
０〜７０℃とすることが好ましい。また、必要によりめ
っき液を撹拌することができる。The plating temperature is 30 to 80 ° C., especially 5
The temperature is preferably 0 to 70 ° C. Further, the plating solution can be stirred if necessary.
【００１７】[0017]
【発明の効果】本発明の無電解パラジウムめっき液は、
浴の安定性が高く、このため高温でめっき作業を支障な
く行うことができ、また析出速度が大きいと共に、皮膜
物性に優れ、クラック発生がなく、半田濡れ性、ボンデ
ィング性に優れためっき皮膜を与えるものである。The electroless palladium plating solution of the present invention is
High stability of the bath makes it possible to carry out plating work at high temperature without any problems. In addition to having a high deposition rate, it has excellent physical properties of the film, no cracks occur, and a plating film with excellent solder wettability and bondability is obtained. To give.
【００１８】[0018]
【実施例】以下、実施例と比較例を示し、本発明を具体
的に説明するが、本発明は下記の実施例に制限されるも
のではない。EXAMPLES The present invention will be described below in detail with reference to examples and comparative examples, but the present invention is not limited to the following examples.
【００１９】〔比較例１〕 ＰｄＣｌ2 ５ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ ｐＨ ８ 浴温 ５０℃Comparative Example 1 PdCl 2 5 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L pH 8 Bath temperature 50 ° C.
【００２０】〔比較例２〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ チオジグリコール酸 ２０ｍｇ／Ｌ ｐＨ ８ 浴温 ５０℃Comparative Example 2 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Thiodiglycolic acid 20 mg / L pH 8 Bath temperature 50 ° C.
【００２１】〔比較例３〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ チオジグリコール酸 ２０ｍｇ／Ｌ ジメチルアミンボラン １０ ｇ／Ｌ ｐＨ ８ 浴温 ５０℃Comparative Example 3 PdCl 2 3 g / L ethylenediamine 25 g / L thiodiglycolic acid 20 mg / L dimethylamineborane 10 g / L pH 8 bath temperature 50 ° C.
【００２２】〔実施例１〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ チオ硫酸ソーダ ５０ｍｇ／Ｌ ｐＨ ８ 浴温 ５０℃Example 1 PdCl 2 3 g / L ethylenediamine 25 g / L sodium hypophosphite 20 g / L sodium thiosulfate 50 mg / L pH 8 bath temperature 50 ° C.
【００２３】〔実施例２〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ 次亜リン酸ソーダ ２０ ｇ／Ｌ 二チオン酸ソーダ ４０ｍｇ／Ｌ ｐＨ ８ 浴温 ７０℃Example 2 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Sodium dithionate 40 mg / L pH 8 Bath temperature 70 ° C.
【００２４】〔実施例３〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ ジメチルアミンボラン １０ ｇ／Ｌ 亜硫酸ソーダ ４０ｍｇ／Ｌ ｐＨ ８ 浴温 ７０℃Example 3 PdCl 2 3 g / L ethylenediamine 25 g / L dimethylamine borane 10 g / L sodium sulfite 40 mg / L pH 8 bath temperature 70 ° C.
【００２５】〔実施例４〕 ＰｄＣｌ2 ３ ｇ／Ｌ エチレンジアミン ２５ ｇ／Ｌ ジメチルアミンボラン １０ ｇ／Ｌ 亜二チオン酸ソーダ ５０ｍｇ／Ｌ ｐＨ ８ 浴温 ７０℃Example 4 PdCl 2 3 g / L Ethylenediamine 25 g / L Dimethylamine borane 10 g / L Sodium dithionite 50 mg / L pH 8 Bath temperature 70 ° C.
【００２６】上記成分を水に溶解し、各例のめっき液を
調製した後、その安定性を下記方法で調べた。９０℃加熱試験 ：９０℃高温槽でめっき液１００ｍｌを
ビーカー中に密閉保存。室温放置試験 ：室温状態でめっき液１リットルをポリエ
チレン容器中に密閉保存。次に、表面にニッケル−ホウ
素系無電解ニッケルめっきを施した（Ｎｉ４μｍ）鉄板
を上記各めっき液中に浸漬し、各例中に記載した浴温で
１時間めっきを行い、その析出速度を評価した。また、
同様の条件で無電解パラジウムめっき皮膜を０．５μｍ
施し、ＳＥＭ観察でクラックの有無を調べた。The above components were dissolved in water to prepare a plating solution for each example, and the stability was examined by the following method. 90 ° C. heating test : 100 ml of plating solution is hermetically stored in a beaker in a 90 ° C. high temperature tank. Room temperature test : 1 liter of plating solution is sealed and stored in a polyethylene container at room temperature. Next, an iron plate having nickel-boron electroless nickel plating on its surface (Ni4 μm) was dipped in each of the above plating solutions, plated for 1 hour at the bath temperature described in each example, and the deposition rate was evaluated. did. Also,
0.5μm electroless palladium plating film under the same conditions
Then, the presence or absence of cracks was examined by SEM observation.
【００２７】更に、下記方法により、半田濡れ性、ボン
ディング性を評価した。 半田濡れ性 ：１０×５０ｍｍの４２アロイメニスコグラ
フ用試片に同上下地ニッケルめっきを施し、次いで無電
解パラジウムめっき皮膜を０．５μｍ施した後、メニス
コグラフで評価した。この場合、ニッケル／金プロセス
の半田濡れを基準に評価した。ボンディング性 ：評価用ピースにめっきし（めっき条件
は同上）、金線によるボンディングを行って強度を評価
した。この場合、ニッケル／金プロセスを基準に評価し
た。以上の結果を表１に示す。Further, solder wettability and bond
The dinging property was evaluated. Solder wettability : 10 x 50mm 42 alloy meniscogula
Apply the same nickel plating to the test piece, and then
After applying a palladium plating film of 0.5 μm, a meniscus
It was evaluated by cograph. In this case, the nickel / gold process
Evaluation was made on the basis of the solder wetness.Bondability : Plating on the evaluation piece (plating conditions
Is the same as above), and the strength is evaluated by bonding with a gold wire.
did. In this case, the nickel / gold process is used as the basis for evaluation.
Was. Table 1 shows the above results.
【００２８】[0028]
【表１】 [Table 1]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 正本 宏和 大阪府枚方市出口１丁目５番１号 上村工 業株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hirokazu Masamoto 1-5-1, Exit Hirakata, Osaka Prefecture Uemura Industrial Co., Ltd. Central Research Laboratory
Claims (4)
の塩、亜リン酸及びその塩並びに水素化ホウ素化物及び
アミンボラン類から選ばれる還元剤と、アンモニア及び
アミン類から選ばれる錯化剤とを含有する無電解パラジ
ウムめっき液に、チオ硫酸塩、ポリチオン酸塩、亜二チ
オン酸塩、亜硫酸塩及び二チオン酸塩から選ばれる無機
硫黄化合物を添加してなることを特徴とする無電解パラ
ジウムめっき液。1. A palladium compound, a reducing agent selected from hypophosphorous acid and salts thereof, phosphorous acid and salts thereof, borohydrides and amine boranes, and a complexing agent selected from ammonia and amines. Electroless palladium plating characterized in that an inorganic sulfur compound selected from thiosulfate, polythionate, dithionite, sulfite and dithionate is added to the contained electroless palladium plating solution. liquid.
０ｍｍｏｌ／ｌである請求項１記載のめっき液。2. The amount of the inorganic sulfur compound added is 0.01 to 1.
The plating solution according to claim 1, which is 0 mmol / l.
載のめっき液。3. The plating solution according to claim 1, which has a pH of 4 to 10.
めっき液中に被めっき物を浸漬して該被めっき物上に無
電解パラジウムめっき皮膜を形成することを特徴とする
無電解パラジウムめっき方法。4. An electroless characterized in that an object to be plated is immersed in the plating solution according to any one of claims 1 to 3 to form an electroless palladium plating film on the object to be plated. Palladium plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09777995A JP3204035B2 (en) | 1995-03-30 | 1995-03-30 | Electroless palladium plating solution and plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09777995A JP3204035B2 (en) | 1995-03-30 | 1995-03-30 | Electroless palladium plating solution and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08269727A true JPH08269727A (en) | 1996-10-15 |
| JP3204035B2 JP3204035B2 (en) | 2001-09-04 |
Family
ID=14201325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09777995A Expired - Lifetime JP3204035B2 (en) | 1995-03-30 | 1995-03-30 | Electroless palladium plating solution and plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3204035B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003098681A1 (en) * | 2002-05-16 | 2003-11-27 | National University Of Singapore | Wafer level electroless copper metallization and bumping process, and plating solutions for semiconductor wafer and microchip |
| JP2006339609A (en) * | 2005-06-06 | 2006-12-14 | Kyocer Slc Technologies Corp | Wiring board and manufacturing method of the same |
| US7163915B2 (en) | 2000-03-01 | 2007-01-16 | Arkema Inc. | Aqueous solutions containing dithionic acid and/or metal dithionate for metal finishing |
| US7312533B2 (en) | 2000-03-31 | 2007-12-25 | Infineon Technologies Ag | Electronic component with flexible contacting pads and method for producing the electronic component |
| WO2008105104A1 (en) * | 2007-02-28 | 2008-09-04 | Kojima Chemicals Co., Ltd. | Electroless pure palladium plating solution |
| US7678183B2 (en) | 2005-09-27 | 2010-03-16 | C. Uyemura & Co., Ltd. | Electroless palladium plating bath and electroless palladium plating method |
| WO2017023849A1 (en) * | 2015-08-05 | 2017-02-09 | Uyemura International Corporation | Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom |
| CN111164236A (en) * | 2017-10-06 | 2020-05-15 | 上村工业株式会社 | Electroless palladium plating solution and electroless palladium plating film |
| CN113493907A (en) * | 2020-04-03 | 2021-10-12 | 上村工业株式会社 | Palladium plating solution and plating method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080015936A (en) | 2005-07-20 | 2008-02-20 | 닛코킨조쿠 가부시키가이샤 | Plating solution for electroless palladium plating |
-
1995
- 1995-03-30 JP JP09777995A patent/JP3204035B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7163915B2 (en) | 2000-03-01 | 2007-01-16 | Arkema Inc. | Aqueous solutions containing dithionic acid and/or metal dithionate for metal finishing |
| US7312533B2 (en) | 2000-03-31 | 2007-12-25 | Infineon Technologies Ag | Electronic component with flexible contacting pads and method for producing the electronic component |
| WO2003098681A1 (en) * | 2002-05-16 | 2003-11-27 | National University Of Singapore | Wafer level electroless copper metallization and bumping process, and plating solutions for semiconductor wafer and microchip |
| JP2006339609A (en) * | 2005-06-06 | 2006-12-14 | Kyocer Slc Technologies Corp | Wiring board and manufacturing method of the same |
| US7678183B2 (en) | 2005-09-27 | 2010-03-16 | C. Uyemura & Co., Ltd. | Electroless palladium plating bath and electroless palladium plating method |
| WO2008105104A1 (en) * | 2007-02-28 | 2008-09-04 | Kojima Chemicals Co., Ltd. | Electroless pure palladium plating solution |
| US7981202B2 (en) | 2007-02-28 | 2011-07-19 | Kojima Chemicals Co., Ltd. | Electroless pure palladium plating solution |
| WO2017023849A1 (en) * | 2015-08-05 | 2017-02-09 | Uyemura International Corporation | Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom |
| CN111164236A (en) * | 2017-10-06 | 2020-05-15 | 上村工业株式会社 | Electroless palladium plating solution and electroless palladium plating film |
| CN113493907A (en) * | 2020-04-03 | 2021-10-12 | 上村工业株式会社 | Palladium plating solution and plating method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3204035B2 (en) | 2001-09-04 |
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