JPH08269727A - Electroless palladium plating solution and plating method - Google Patents

Electroless palladium plating solution and plating method

Info

Publication number
JPH08269727A
JPH08269727A JP9777995A JP9777995A JPH08269727A JP H08269727 A JPH08269727 A JP H08269727A JP 9777995 A JP9777995 A JP 9777995A JP 9777995 A JP9777995 A JP 9777995A JP H08269727 A JPH08269727 A JP H08269727A
Authority
JP
Japan
Prior art keywords
plating
palladium
plating solution
electroless
inorganic sulfur
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9777995A
Other languages
Japanese (ja)
Other versions
JP3204035B2 (en
Inventor
Motonobu Kubo
元伸 久保
Tooru Kamitamari
徹 上玉利
Teruyuki Hotta
輝幸 堀田
Hirokazu Masamoto
宏和 正本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
C Uyemura and Co Ltd
Original Assignee
C Uyemura and Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C Uyemura and Co Ltd filed Critical C Uyemura and Co Ltd
Priority to JP09777995A priority Critical patent/JP3204035B2/en
Publication of JPH08269727A publication Critical patent/JPH08269727A/en
Application granted granted Critical
Publication of JP3204035B2 publication Critical patent/JP3204035B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To improve plating bath stability, depositing rate and plating film property by adding an inorganic sulfur compound such as thiosulfate into an electroless palladium plating solution containing a palladium compound, a reducing agent and a complexing agent. CONSTITUTION: The inorganic sulfur compound is added into the electroless palladium plating solution containing the palladium compound, the reducing agent and the complexing agent. As the palladium compound, a water soluble salt such as palladium chloride is suitable and is used by 0.001-0.5mol/l. Hypophosphorous acid, its salt, phosphorous acid, its salt, a borohydride, aminoborans as the reducing agent and ammonia, amins as the complexing agent are respectively used. As the inorganic sulfur compound, thiosulfate, polythionate, dithionite, sulfite and dithionate or the like is used by 0.01-10mmol/l. A plating film hardly causing cracks is rapidly formed by controlling the pH of the plating solution to 4-10 and dipping a material to be plated thereinto.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子部品等へのボンデ
ィング用めっきなどとして好適に用いられる無電解パラ
ジウムめっき液及びめっき方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless palladium plating solution and a plating method which are preferably used as plating for bonding electronic parts and the like.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】従来、
電子機器の接合技術としては、無電解ニッケルめっき/
無電解金めっきプロセスが主流であるが、最近において
は電子部品等をコストダウンさせることが要望され、こ
のためコストの高い無電解金めっきに代えて無電解パラ
ジウムめっきが注目されるようになってきた。
2. Description of the Related Art Conventionally, the problems to be solved by the invention
Electroless nickel plating /
The electroless gold plating process is the mainstream, but recently, it has been demanded to reduce the cost of electronic parts etc. Therefore, electroless palladium plating has been attracting attention in place of the costly electroless gold plating. It was

【0003】このため、種々の無電解パラジウムめっき
液が提案されている(特開昭62−124280号、特
開平1−268877号、特開平5−214551号公
報)。
For this reason, various electroless palladium plating solutions have been proposed (JP-A-62-124280, JP-A-1-268877, JP-A-5-214551).

【0004】しかし、従来の無電解パラジウムめっき皮
膜はクラックが発生し易く、このため半田濡れ性及びボ
ンディング性が金めっき皮膜に比べて劣るという問題が
あった。また、従来の無電解パラジウムめっき液は浴の
安定性に劣り、更に析出速度も遅いという問題もあっ
た。
However, the conventional electroless palladium plating film has a problem that cracks are likely to occur and therefore the solder wettability and bonding property are inferior to those of the gold plating film. Further, the conventional electroless palladium plating solutions have problems that the bath stability is poor and the deposition rate is slow.

【0005】本発明は上記事情に鑑みなされたもので、
浴安定性に優れ、析出速度も大きい上、クラックの発生
し難いめっき皮膜を与える無電解パラジウムめっき液及
びめっき方法を提供することを目的とする。
The present invention has been made in view of the above circumstances.
An object of the present invention is to provide an electroless palladium plating solution and a plating method which provide a plating film which is excellent in bath stability, has a high deposition rate, and is resistant to cracks.

【0006】[0006]

【課題を解決するための手段及び作用】本発明者は、上
記目的を達成するため鋭意検討を行った結果、パラジウ
ム化合物と、次亜リン酸及びその塩、亜リン酸及びその
塩並びに水素化ホウ素化物及びアミンボラン類から選ば
れる還元剤と、アンモニア及びアミン類から選ばれる錯
化剤とを含有する無電解パラジウムめっき液に、チオ硫
酸塩、ポリチオン酸塩、亜二チオン酸塩、亜硫酸塩及び
二チオン酸塩から選ばれる無機硫黄化合物を添加するこ
とにより、無電解パラジウムめっき液の安定性が顕著に
向上する上、析出速度も向上し、また得られた無電解パ
ラジウムめっき皮膜にクラックが生じ難く、このため半
田濡れ性、ボンディング性に優れためっき皮膜を形成し
得ることを見い出し、本発明をなすに至ったものであ
る。
Means for Solving the Problems and Actions The inventors of the present invention have conducted extensive studies to achieve the above object, and as a result, have found that palladium compounds, hypophosphorous acid and salts thereof, phosphorous acid and salts thereof, and hydrogenation. A reducing agent selected from boride and amine boranes, and an electroless palladium plating solution containing a complexing agent selected from ammonia and amines, thiosulfate, polythionate, dithionite, sulfite and By adding an inorganic sulfur compound selected from dithionate, the stability of the electroless palladium plating solution is significantly improved, the deposition rate is also improved, and cracks occur in the obtained electroless palladium plating film. It has been found that it is difficult to form a plating film having excellent solder wettability and bondability, and thus the present invention has been accomplished.

【0007】以下、本発明につき更に詳しく説明する
と、本発明の無電解パラジウムめっき液は、パラジウム
化合物と、次亜リン酸及びその塩、亜リン酸及びその塩
並びに水素化ホウ素化物及びアミンボラン類から選ばれ
る還元剤と、アンモニア及びアミン類から選ばれる錯化
剤とを含有する無電解パラジウムめっき液に対し、無機
硫黄化合物を添加してなるものである。
The present invention will be described in more detail below. The electroless palladium plating solution of the present invention comprises a palladium compound, hypophosphorous acid and its salt, phosphorous acid and its salt, borohydride and amine boranes. An inorganic sulfur compound is added to an electroless palladium plating solution containing a reducing agent selected and a complexing agent selected from ammonia and amines.

【0008】ここで、パラジウム化合物としては、水溶
性のものであればいずれのものでもよく、例えば塩化パ
ラジウム、硫酸パラジウム、酢酸パラジウムなどを用い
ることができる。その使用量は、0.001〜0.5m
ol/l、特に0.01〜0.1mol/lとすること
が好ましい。少なすぎるとめっき速度が低下し、多すぎ
ると皮膜物性が低下するおそれがある。
Any palladium compound may be used as long as it is water-soluble, and for example, palladium chloride, palladium sulfate, palladium acetate or the like can be used. The usage amount is 0.001 to 0.5 m
It is preferably ol / l, particularly 0.01 to 0.1 mol / l. If it is too small, the plating rate will decrease, and if it is too large, the physical properties of the coating may deteriorate.

【0009】また、還元剤としては、上述したように、
次亜リン酸、次亜リン酸ナトリウム等の次亜リン酸塩、
亜リン酸、亜リン酸ナトリウム等の亜リン酸塩、水素化
ホウ素ナトリウム等の水素化ホウ素化物、ジメチルアミ
ンボラン、ジエチルアミンボラン等のアミンボラン類の
いずれかを使用する。その使用量は0.001〜5mo
l/l、特に0.2〜2mol/lとすることが好まし
い。少なすぎると析出速度が低下し、多すぎると浴が不
安定化するおそれがある。
As the reducing agent, as described above,
Hypophosphite, hypophosphite such as sodium hypophosphite,
Any of phosphite, phosphites such as sodium phosphite, borohydrides such as sodium borohydride, and amine boranes such as dimethylamine borane and diethylamine borane are used. The usage is 0.001-5mo
It is preferably 1 / l, particularly 0.2 to 2 mol / l. If it is too small, the deposition rate will decrease, and if it is too large, the bath may become unstable.

【0010】更に、錯化剤としてアンモニアやアミン類
を使用する。アミン類としては、メチルアミン、ジメチ
ルアミン、トリメチルアミン、ベンジルアミン、メチレ
ンジアミン、エチレンジアミン、テトラメチレンジアミ
ン、ジエチレントリアミン、EDTA、EDTAナトリ
ウム、N−ヒドロキシエチレンジアミン三酢酸及びその
塩、グリシン、N−メチルグリシン、ビタントイン酸、
イミダゾリン、2−メチル−2−イミダゾリンなどが挙
げられ、これらの1種を単独で又は2種以上を併用して
使用することができる。これらの中では、特にジメチル
アミン、エチレンジアミン、N−ヒドロキシエチレンジ
アミン三酢酸が好ましい。その使用量は0.001〜1
0mol/l、特に0.1〜2mol/lとすることが
好ましい。少なすぎると浴の安定性が低下し、多すぎる
とめっき速度が低下する。
Further, ammonia and amines are used as complexing agents. Examples of the amines include methylamine, dimethylamine, trimethylamine, benzylamine, methylenediamine, ethylenediamine, tetramethylenediamine, diethylenetriamine, EDTA, EDTA sodium, N-hydroxyethylenediaminetriacetic acid and its salts, glycine, N-methylglycine, bitantoin. acid,
Examples thereof include imidazoline and 2-methyl-2-imidazoline, and these can be used alone or in combination of two or more. Of these, dimethylamine, ethylenediamine, and N-hydroxyethylenediaminetriacetic acid are particularly preferable. The usage is 0.001-1
It is preferably 0 mol / l, particularly preferably 0.1 to 2 mol / l. If it is too small, the stability of the bath will decrease, and if it is too large, the plating rate will decrease.

【0011】本発明の無電解パラジウムめっき液には、
上記成分に加えてチオ硫酸塩(2価の無機硫黄化合
物)、ポリチオン酸塩(例えばO3S−Sn−SO3にお
いて、n=1〜4の無機硫黄化合物)、亜二チオン酸塩
(3価の無機硫黄化合物)、亜硫酸塩(4価の無機硫黄
化合物)、二チオン酸塩(5価の無機硫黄化合物)から
選ばれる無機硫黄化合物の1種又は2種以上を添加する
もので、これによりめっき液の安定性、析出速度、めっ
き皮膜特性が顕著に向上するものである。なお、上記塩
としてはナトリウム塩等の水溶性塩が使用される。
The electroless palladium plating solution of the present invention contains
In addition to the above components, thiosulfates (divalent inorganic sulfur compounds), polythionates (for example, in O 3 S—Sn—SO 3 , n = 1 to 4 inorganic sulfur compounds), dithionite (3 Valent inorganic sulfur compound), sulfite (tetravalent inorganic sulfur compound), dithionate (pentavalent inorganic sulfur compound) selected from one or more inorganic sulfur compounds, This significantly improves the stability of the plating solution, the deposition rate, and the plating film characteristics. A water-soluble salt such as sodium salt is used as the salt.

【0012】上記無機硫黄化合物の添加量は0.01〜
10mmol(ミリモル)/l、特に0.1〜5mmo
l/lであり、この量が少なすぎると、上述した効果が
十分に達成されず、また多すぎるとめっき速度が低下す
る傾向にある。
The amount of the inorganic sulfur compound added is 0.01 to
10 mmol / mole, especially 0.1-5 mmo
If the amount is too small, the above-mentioned effects cannot be sufficiently achieved, and if the amount is too large, the plating rate tends to decrease.

【0013】本発明のめっき液には、更にめっき皮膜の
均一性向上を目的として非イオン性、カチオン性、アニ
オン性、両性の各種界面活性剤を添加することができ
る。この場合、その添加量は0.01〜10g/lとす
ることができる。
Various nonionic, cationic, anionic and amphoteric surfactants may be added to the plating solution of the present invention for the purpose of improving the uniformity of the plating film. In this case, the added amount can be 0.01 to 10 g / l.

【0014】本発明のめっき液はpH4〜10、特に6
〜8であることが好ましく、pHが低すぎると浴の安定
性が低下し、pHが高すぎるとめっき皮膜にクラックが
生じやすくなる。
The plating solution of the present invention has a pH of 4 to 10, especially 6
It is preferably -8, and if the pH is too low, the stability of the bath will be reduced, and if the pH is too high, cracks will tend to occur in the plating film.

【0015】上述した無電解パラジウムめっき液は電子
部品のボンディング用めっきなどとして好適に使用され
るが、これを用いてめっきを行う場合は、このめっき液
中に被めっき物を浸漬すればよい。被めっき液の材質と
しては、鉄、コバルト、ニッケル、銅、錫、銀、金、白
金、パラジウムなどやこれらの合金といった無電解パラ
ジウムめっき皮膜の還元析出に触媒性のある金属を挙げ
ることができる。また、触媒性のない金属であれば、い
わゆるガルバニックイニシエーションを行う(被めっき
物に対し還元析出が生じるまで電気を与える)か、又は
上記触媒活性のある金属のめっき皮膜を形成してからめ
っきを行えばよく、またガラス、セラミックス、プラス
チック等、或いは上記触媒活性のない金属などに対して
は常法に従ってパラジウム核などの金属触媒核を付着さ
せた後にめっきを行うことができる。
The above-mentioned electroless palladium plating solution is suitably used as a plating for bonding electronic parts, etc. When plating is performed using this, the object to be plated may be immersed in this plating solution. Examples of the material of the liquid to be plated include iron, cobalt, nickel, copper, tin, silver, gold, platinum, palladium and the like, and alloys thereof, which have catalytic properties for reducing and depositing the electroless palladium plating film. . If the metal has no catalytic property, so-called galvanic initiation is performed (electricity is applied to the object to be plated until reduction precipitation occurs), or plating is performed after forming a plating film of the above-mentioned catalytically active metal. It suffices to carry out, and for glass, ceramics, plastics, or the like, or metals having no catalytic activity as described above, plating can be carried out after attaching metal catalyst nuclei such as palladium nuclei according to a conventional method.

【0016】なお、めっき温度は30〜80℃、特に5
0〜70℃とすることが好ましい。また、必要によりめ
っき液を撹拌することができる。
The plating temperature is 30 to 80 ° C., especially 5
The temperature is preferably 0 to 70 ° C. Further, the plating solution can be stirred if necessary.

【0017】[0017]

【発明の効果】本発明の無電解パラジウムめっき液は、
浴の安定性が高く、このため高温でめっき作業を支障な
く行うことができ、また析出速度が大きいと共に、皮膜
物性に優れ、クラック発生がなく、半田濡れ性、ボンデ
ィング性に優れためっき皮膜を与えるものである。
The electroless palladium plating solution of the present invention is
High stability of the bath makes it possible to carry out plating work at high temperature without any problems. In addition to having a high deposition rate, it has excellent physical properties of the film, no cracks occur, and a plating film with excellent solder wettability and bondability is obtained. To give.

【0018】[0018]

【実施例】以下、実施例と比較例を示し、本発明を具体
的に説明するが、本発明は下記の実施例に制限されるも
のではない。
EXAMPLES The present invention will be described below in detail with reference to examples and comparative examples, but the present invention is not limited to the following examples.

【0019】〔比較例1〕 PdCl2 5 g/L エチレンジアミン 25 g/L 次亜リン酸ソーダ 20 g/L pH 8 浴温 50℃Comparative Example 1 PdCl 2 5 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L pH 8 Bath temperature 50 ° C.

【0020】〔比較例2〕 PdCl2 3 g/L エチレンジアミン 25 g/L 次亜リン酸ソーダ 20 g/L チオジグリコール酸 20mg/L pH 8 浴温 50℃Comparative Example 2 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Thiodiglycolic acid 20 mg / L pH 8 Bath temperature 50 ° C.

【0021】〔比較例3〕 PdCl2 3 g/L エチレンジアミン 25 g/L チオジグリコール酸 20mg/L ジメチルアミンボラン 10 g/L pH 8 浴温 50℃Comparative Example 3 PdCl 2 3 g / L ethylenediamine 25 g / L thiodiglycolic acid 20 mg / L dimethylamineborane 10 g / L pH 8 bath temperature 50 ° C.

【0022】〔実施例1〕 PdCl2 3 g/L エチレンジアミン 25 g/L 次亜リン酸ソーダ 20 g/L チオ硫酸ソーダ 50mg/L pH 8 浴温 50℃Example 1 PdCl 2 3 g / L ethylenediamine 25 g / L sodium hypophosphite 20 g / L sodium thiosulfate 50 mg / L pH 8 bath temperature 50 ° C.

【0023】〔実施例2〕 PdCl2 3 g/L エチレンジアミン 25 g/L 次亜リン酸ソーダ 20 g/L 二チオン酸ソーダ 40mg/L pH 8 浴温 70℃Example 2 PdCl 2 3 g / L Ethylenediamine 25 g / L Sodium hypophosphite 20 g / L Sodium dithionate 40 mg / L pH 8 Bath temperature 70 ° C.

【0024】〔実施例3〕 PdCl2 3 g/L エチレンジアミン 25 g/L ジメチルアミンボラン 10 g/L 亜硫酸ソーダ 40mg/L pH 8 浴温 70℃Example 3 PdCl 2 3 g / L ethylenediamine 25 g / L dimethylamine borane 10 g / L sodium sulfite 40 mg / L pH 8 bath temperature 70 ° C.

【0025】〔実施例4〕 PdCl2 3 g/L エチレンジアミン 25 g/L ジメチルアミンボラン 10 g/L 亜二チオン酸ソーダ 50mg/L pH 8 浴温 70℃Example 4 PdCl 2 3 g / L Ethylenediamine 25 g / L Dimethylamine borane 10 g / L Sodium dithionite 50 mg / L pH 8 Bath temperature 70 ° C.

【0026】上記成分を水に溶解し、各例のめっき液を
調製した後、その安定性を下記方法で調べた。90℃加熱試験 :90℃高温槽でめっき液100mlを
ビーカー中に密閉保存。室温放置試験 :室温状態でめっき液1リットルをポリエ
チレン容器中に密閉保存。次に、表面にニッケル−ホウ
素系無電解ニッケルめっきを施した(Ni4μm)鉄板
を上記各めっき液中に浸漬し、各例中に記載した浴温で
1時間めっきを行い、その析出速度を評価した。また、
同様の条件で無電解パラジウムめっき皮膜を0.5μm
施し、SEM観察でクラックの有無を調べた。
The above components were dissolved in water to prepare a plating solution for each example, and the stability was examined by the following method. 90 ° C. heating test : 100 ml of plating solution is hermetically stored in a beaker in a 90 ° C. high temperature tank. Room temperature test : 1 liter of plating solution is sealed and stored in a polyethylene container at room temperature. Next, an iron plate having nickel-boron electroless nickel plating on its surface (Ni4 μm) was dipped in each of the above plating solutions, plated for 1 hour at the bath temperature described in each example, and the deposition rate was evaluated. did. Also,
0.5μm electroless palladium plating film under the same conditions
Then, the presence or absence of cracks was examined by SEM observation.

【0027】更に、下記方法により、半田濡れ性、ボン
ディング性を評価した。 半田濡れ性 :10×50mmの42アロイメニスコグラ
フ用試片に同上下地ニッケルめっきを施し、次いで無電
解パラジウムめっき皮膜を0.5μm施した後、メニス
コグラフで評価した。この場合、ニッケル/金プロセス
の半田濡れを基準に評価した。ボンディング性 :評価用ピースにめっきし(めっき条件
は同上)、金線によるボンディングを行って強度を評価
した。この場合、ニッケル/金プロセスを基準に評価し
た。以上の結果を表1に示す。
Further, solder wettability and bond
The dinging property was evaluated. Solder wettability : 10 x 50mm 42 alloy meniscogula
Apply the same nickel plating to the test piece, and then
After applying a palladium plating film of 0.5 μm, a meniscus
It was evaluated by cograph. In this case, the nickel / gold process
Evaluation was made on the basis of the solder wetness.Bondability : Plating on the evaluation piece (plating conditions
Is the same as above), and the strength is evaluated by bonding with a gold wire.
did. In this case, the nickel / gold process is used as the basis for evaluation.
Was. Table 1 shows the above results.

【0028】[0028]

【表1】 [Table 1]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 正本 宏和 大阪府枚方市出口1丁目5番1号 上村工 業株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hirokazu Masamoto 1-5-1, Exit Hirakata, Osaka Prefecture Uemura Industrial Co., Ltd. Central Research Laboratory

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 パラジウム化合物と、次亜リン酸及びそ
の塩、亜リン酸及びその塩並びに水素化ホウ素化物及び
アミンボラン類から選ばれる還元剤と、アンモニア及び
アミン類から選ばれる錯化剤とを含有する無電解パラジ
ウムめっき液に、チオ硫酸塩、ポリチオン酸塩、亜二チ
オン酸塩、亜硫酸塩及び二チオン酸塩から選ばれる無機
硫黄化合物を添加してなることを特徴とする無電解パラ
ジウムめっき液。
1. A palladium compound, a reducing agent selected from hypophosphorous acid and salts thereof, phosphorous acid and salts thereof, borohydrides and amine boranes, and a complexing agent selected from ammonia and amines. Electroless palladium plating characterized in that an inorganic sulfur compound selected from thiosulfate, polythionate, dithionite, sulfite and dithionate is added to the contained electroless palladium plating solution. liquid.
【請求項2】 無機硫黄化合物の添加量が0.01〜1
0mmol/lである請求項1記載のめっき液。
2. The amount of the inorganic sulfur compound added is 0.01 to 1.
The plating solution according to claim 1, which is 0 mmol / l.
【請求項3】 pHが4〜10である請求項1又は2記
載のめっき液。
3. The plating solution according to claim 1, which has a pH of 4 to 10.
【請求項4】 請求項1乃至3のいずれか1項に記載の
めっき液中に被めっき物を浸漬して該被めっき物上に無
電解パラジウムめっき皮膜を形成することを特徴とする
無電解パラジウムめっき方法。
4. An electroless characterized in that an object to be plated is immersed in the plating solution according to any one of claims 1 to 3 to form an electroless palladium plating film on the object to be plated. Palladium plating method.
JP09777995A 1995-03-30 1995-03-30 Electroless palladium plating solution and plating method Expired - Lifetime JP3204035B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09777995A JP3204035B2 (en) 1995-03-30 1995-03-30 Electroless palladium plating solution and plating method

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Cited By (9)

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WO2003098681A1 (en) * 2002-05-16 2003-11-27 National University Of Singapore Wafer level electroless copper metallization and bumping process, and plating solutions for semiconductor wafer and microchip
JP2006339609A (en) * 2005-06-06 2006-12-14 Kyocer Slc Technologies Corp Wiring board and manufacturing method of the same
US7163915B2 (en) 2000-03-01 2007-01-16 Arkema Inc. Aqueous solutions containing dithionic acid and/or metal dithionate for metal finishing
US7312533B2 (en) 2000-03-31 2007-12-25 Infineon Technologies Ag Electronic component with flexible contacting pads and method for producing the electronic component
WO2008105104A1 (en) * 2007-02-28 2008-09-04 Kojima Chemicals Co., Ltd. Electroless pure palladium plating solution
US7678183B2 (en) 2005-09-27 2010-03-16 C. Uyemura & Co., Ltd. Electroless palladium plating bath and electroless palladium plating method
WO2017023849A1 (en) * 2015-08-05 2017-02-09 Uyemura International Corporation Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom
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Publication number Priority date Publication date Assignee Title
US7163915B2 (en) 2000-03-01 2007-01-16 Arkema Inc. Aqueous solutions containing dithionic acid and/or metal dithionate for metal finishing
US7312533B2 (en) 2000-03-31 2007-12-25 Infineon Technologies Ag Electronic component with flexible contacting pads and method for producing the electronic component
WO2003098681A1 (en) * 2002-05-16 2003-11-27 National University Of Singapore Wafer level electroless copper metallization and bumping process, and plating solutions for semiconductor wafer and microchip
JP2006339609A (en) * 2005-06-06 2006-12-14 Kyocer Slc Technologies Corp Wiring board and manufacturing method of the same
US7678183B2 (en) 2005-09-27 2010-03-16 C. Uyemura & Co., Ltd. Electroless palladium plating bath and electroless palladium plating method
WO2008105104A1 (en) * 2007-02-28 2008-09-04 Kojima Chemicals Co., Ltd. Electroless pure palladium plating solution
US7981202B2 (en) 2007-02-28 2011-07-19 Kojima Chemicals Co., Ltd. Electroless pure palladium plating solution
WO2017023849A1 (en) * 2015-08-05 2017-02-09 Uyemura International Corporation Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom
CN111164236A (en) * 2017-10-06 2020-05-15 上村工业株式会社 Electroless palladium plating solution and electroless palladium plating film
CN113493907A (en) * 2020-04-03 2021-10-12 上村工业株式会社 Palladium plating solution and plating method

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