JPH08245230A - Quartz glass product for semiconductor production process and its production - Google Patents
Quartz glass product for semiconductor production process and its productionInfo
- Publication number
- JPH08245230A JPH08245230A JP7822395A JP7822395A JPH08245230A JP H08245230 A JPH08245230 A JP H08245230A JP 7822395 A JP7822395 A JP 7822395A JP 7822395 A JP7822395 A JP 7822395A JP H08245230 A JPH08245230 A JP H08245230A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- glass product
- manufacturing process
- semiconductor manufacturing
- symbol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、CZ法によるシリコン
単結晶引き上げ用ルツボ、エピタキシャル成長用ベルジ
ャー、拡散用炉芯管やボート、CVD用ボート又はエッ
チング用ベルジャー等の半導体製造プロセス用石英ガラ
ス製品及びその製造方法に係り、特にバーコードリーダ
ーやOCR等による光学的な読み取りが可能なバーコー
ドや文字又は算用数字等の記号を付した半導体製造プロ
セス用石英ガラス製品及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz glass product for a semiconductor manufacturing process such as a crucible for pulling a silicon single crystal by a CZ method, a bell jar for epitaxial growth, a furnace core tube or boat for diffusion, a boat for CVD or a bell jar for etching, and the like. More particularly, the present invention relates to a quartz glass product for a semiconductor manufacturing process, which has an optical readable barcode such as a bar code reader or an OCR, and symbols such as letters or numbers, and a manufacturing method thereof.
【0002】[0002]
【従来の技術】一般に、光学的な読み取りが可能な記号
を製品に付すことは、製品の流通管理のみならず、製造
工程における工程管理、在庫管理に有効であると共に、
使用者における使用回数管理等にも有効である。なぜな
らば、キーボードによるインプットは、入力者によるミ
スが避けられないことと、製品数が多くなると入力作業
による疲労、時間がかかることなどが問題となるからで
ある。従来、半導体製造プロセス用石英ガラス製品にお
いて、光学的な読み取りが可能な記号を付したものは存
在していない。これは、半導体製造プロセスは、極めて
清浄な環境の下でなされるものの、通常の着色剤を用い
て記号を石英ガラス製品に付した場合、使用環境を汚染
するおそれのあることが原因の1つである。又、石英ガ
ラス製品は、その製造工程中及び半導体製造プロセスで
使用される際に、表面汚染層の除去を目的として、たび
たびフッ酸、フッ化アンモニウムあるいはフッ酸と他の
酸との混酸で洗浄されるが、通常の着色剤では、これら
の酸処理に耐え得ないこともその原因である。更に、石
英ガラス製品は、その製造工程において、いわゆるガラ
ス細工加工によって変形加工、溶接、つや出し加工等が
行われる一方、半導体製造プロセスにおいては、拡散、
エピタキシャル成長、CVD、エッチング工程等、熱あ
るいは熱とプラズマとに同時に曝される工程が多く、通
常の着色剤では、これらの熱処理で変質又は消失するこ
とも又その原因である。2. Description of the Related Art Generally, it is effective to attach an optically readable symbol to a product not only for product distribution control but also for process control and inventory control in the manufacturing process.
It is also effective for the user to manage the number of uses. This is because there is a problem with keyboard input in that mistakes made by the user cannot be avoided, and fatigue and time consuming input work when the number of products increases. Conventionally, there is no quartz glass product for a semiconductor manufacturing process with an optically readable symbol. One of the reasons for this is that the semiconductor manufacturing process is performed in an extremely clean environment, but when a symbol is attached to a quartz glass product using a normal colorant, it may contaminate the usage environment. Is. Quartz glass products are often washed with hydrofluoric acid, ammonium fluoride or a mixed acid of hydrofluoric acid and other acids for the purpose of removing the surface contamination layer during the manufacturing process and during the semiconductor manufacturing process. However, the reason is that ordinary colorants cannot withstand these acid treatments. Further, in the manufacturing process of quartz glass products, deformation processing, welding, polishing, etc. are performed by so-called glassworking processing, while in the semiconductor manufacturing process, diffusion,
Many processes such as epitaxial growth, CVD, etching, etc. are exposed to heat or heat and plasma at the same time, and with ordinary colorants, alteration or disappearance due to these heat treatments is also the cause.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、半導体
製造プロセス用石英ガラス製品においても、その製造工
程の管理、在庫、流通管理又は半導体製造プロセス中に
おける管理等の利便に供するため、光学的な読み取りが
可能な記号を付したものの出現が望まれている。そこ
で、本発明は、半導体製造プロセスにおいて半導体を汚
染せず、石英ガラスに堅固に固着され、かつ光学的な読
み取りを可能とする記号を付した半導体製造プロセス用
石英ガラス製品及びその製造方法を提供することを目的
とする。However, even in the case of a quartz glass product for a semiconductor manufacturing process, an optical reading is required for convenience of management of the manufacturing process, inventory, distribution management or management during the semiconductor manufacturing process. The appearance of those with possible symbols is desired. Therefore, the present invention provides a quartz glass product for a semiconductor manufacturing process and a manufacturing method thereof, which does not contaminate the semiconductor in the semiconductor manufacturing process, is firmly fixed to the quartz glass, and is provided with a symbol that enables optical reading. The purpose is to do.
【0004】[0004]
【課題を解決するための手段】前記課題を解決するた
め、本発明の第1の半導体製造プロセス用石英ガラス製
品は、耐熱性、耐酸性に優れ、かつアルカリ金属元素や
遷移元素の含有率が極めて少ないほぼ黒色の着色剤を、
記号の形状に倣って石英ガラス製品の表面又は表面に形
成した溝若しくは凹部内にこれらの溶融により付着させ
たことを特徴とする。第2の半導体製造プロセス用石英
ガラス製品は、第1のものにおいて、前記着色剤が、珪
素、炭素、炭化珪素若しくは窒化珪素又はこれらと石英
ガラスとの混合物であることを特徴とする。第3の半導
体製造プロセス用石英ガラス製品は、第1又は第2のも
のにおいて、前記溝又は凹部が、石英ガラス薄板で気密
に被覆されていることを特徴とする。又、第1の半導体
製造プロセス用石英ガラス製品の製造方法は、耐熱性、
耐酸性に優れ、かつアルカリ金属元素や遷移元素の含有
率が極めて少ないほぼ黒色の着色剤を、石英ガラス製品
における記号の印字領域の表面に塗布し、この塗布部分
にレーザー光を記号の形状に倣って照射してすることを
特徴とする。第2の半導体製造プロセス用石英ガラス製
品の製造方法は、レーザー光を石英ガラス製品の表面に
照射して記号の形状に倣った溝若しくは凹部を形成し、
この溝若しくは凹部内に耐熱性、耐酸性に優れ、かつア
ルカリ金属元素や遷移元素の含有率が極めて少ないほぼ
黒色の着色剤を塗布し、この塗布部分にレーザー光を照
射することを特徴とする。第3の半導体製造プロセス用
石英ガラス製品の製造方法は、第1又は第2の方法にお
いて、前記着色剤が、珪素、炭素、炭化珪素若しくは窒
化珪素又はこれらと石英ガラスとの混合物であることを
特徴とする。第4の半導体製造プロセス用石英ガラス製
品の製造方法は、第2又は第3の方法において、前記レ
ーザー光の照射後、全ての溝若しくは凹部を石英ガラス
薄板で覆い、この石英ガラス薄板の全周を表面と気密に
溶接することを特徴とする。In order to solve the above problems, the quartz glass product for a semiconductor manufacturing process according to the first aspect of the present invention has excellent heat resistance and acid resistance, and an alkali metal element or a transition element content rate. Very little black colorant,
It is characterized in that the quartz glass product is adhered to the surface of the quartz glass product or a groove or a recess formed in the surface by melting, following the shape of the symbol. The second quartz glass product for semiconductor manufacturing process is characterized in that, in the first one, the colorant is silicon, carbon, silicon carbide or silicon nitride, or a mixture thereof with quartz glass. A third quartz glass product for semiconductor manufacturing process is characterized in that, in the first or second one, the groove or the recess is airtightly covered with a thin quartz glass plate. In addition, the first method for manufacturing a quartz glass product for a semiconductor manufacturing process is
An almost black colorant with excellent acid resistance and a very low content of alkali metal elements and transition elements is applied to the surface of the printed area of the symbol on the quartz glass product, and laser light is applied to the symbol in the shape of the symbol. It is characterized in that the irradiation is performed after copying. A second method for manufacturing a quartz glass product for a semiconductor manufacturing process is to irradiate a surface of the quartz glass product with a laser beam to form a groove or a recess following the shape of a symbol,
It is characterized in that a substantially black colorant having excellent heat resistance and acid resistance and having a very low content of alkali metal element or transition element is applied to the inside of the groove or recess, and the applied portion is irradiated with laser light. . According to a third method for manufacturing a quartz glass product for semiconductor manufacturing process, in the first or second method, the coloring agent is silicon, carbon, silicon carbide or silicon nitride, or a mixture of these and quartz glass. Characterize. A fourth method for manufacturing a quartz glass product for a semiconductor manufacturing process is the method according to the second or third method, in which all the grooves or recesses are covered with a quartz glass thin plate after the laser light irradiation, and the entire circumference of the quartz glass thin plate is covered. Is hermetically welded to the surface.
【0005】[0005]
【作用】本発明の第1の半導体製造プロセス用石英ガラ
ス製品及びその第1、第2の製造方法においては、石英
ガラス製品の表面又は表面に形成した溝若しくは凹部内
に付着された記号としての着色剤が、使用環境の汚染源
となることがないと共に、長期間に亘って熱や酸等によ
る褪色や変質、又は消失を生じることがない。第2石英
ガラス製品及びその第3の製造方法においては、着色剤
が、こげ茶色から黒色までの色調を呈する。又、第3の
石英ガラス製品及びその第4の製造方法においては、記
号が石英ガラス薄板によって保護される。In the first quartz glass product for semiconductor manufacturing process and the first and second manufacturing methods thereof according to the present invention, as a symbol attached to the surface of the quartz glass product or the groove or recess formed in the surface, The colorant does not become a pollution source of the use environment, and does not cause fading, deterioration, or disappearance due to heat, acid or the like for a long period of time. In the second quartz glass product and the third manufacturing method thereof, the colorant has a color tone of dark brown to black. Further, in the third quartz glass product and the fourth manufacturing method thereof, the symbol is protected by the quartz glass thin plate.
【0006】記号としては、バーコード、文字、標章、
符号又は算用数字等が用いられる。レーザー光の照射
は、炭酸ガスレーザー、YAGレーザー等の固体レーザ
ーにより行われる。又、レーザー光による着色剤の加熱
は、着色剤に対応させて大気中又はアルゴンガス等の非
酸化性雰囲気下で行われる。Symbols include bar codes, characters, marks,
A code or arithmetic number is used. Irradiation with laser light is performed by a solid-state laser such as a carbon dioxide gas laser or a YAG laser. The heating of the coloring agent by the laser light is performed in the air or in a non-oxidizing atmosphere such as argon gas in correspondence with the coloring agent.
【0007】[0007]
【実施例】以下、本発明の実施例について詳細に説明す
る。 実施例1〜4 着色剤として、高純度の窒化珪素(Si3 N4 )粉末
(平均粒径10μm)10重量部に、予め10重量%の
PVA(ポリビニルアルコール)を溶解してある水溶液
(以下、「10%PVA水溶液」という)10重量部を
ビーカー中で混合し、スラリーとした。このスラリーを
厚さ10mmの透明で高純度の石英ガラス板の表面にお
けるバーコードの印字領域全面に塗布し、放置乾燥した
後、炭酸ガスレーザーを使用し、大気中において出力1
0Wのレーザー光をバーコードの形状に倣って上記塗布
部分に送り速度2m/分で照射した。又、着色剤とし
て、それぞれ高純度の炭化珪素(SiC)粉末(平均粒
径10〜50μm)、炭素(C)粉末(耐酸化性に優れ
た、平均長60〜100μm、平均径10〜50μmの
ニードルコークス)及び珪素(Si)粉末(平均粒径2
0〜80μm)を、同様に10%PVA水溶液と混合し
てスラリーとし、それぞれのスラリーを同様の石英ガラ
ス板上におけるバーコードの印字領域全面に塗布し、乾
燥した後、同様にレーザー光をバーコードの形状に倣っ
て照射した。EXAMPLES Examples of the present invention will be described in detail below. Examples 1 to 4 As a coloring agent, an aqueous solution prepared by previously dissolving 10% by weight of PVA (polyvinyl alcohol) in 10 parts by weight of high-purity silicon nitride (Si 3 N 4 ) powder (average particle size 10 μm) , "10% PVA aqueous solution") was mixed in a beaker to form a slurry. This slurry is applied to the entire surface of a transparent and high-purity quartz glass plate having a thickness of 10 mm on which a bar code is printed, left to dry, and then output in the atmosphere using a carbon dioxide laser.
A laser beam of 0 W was irradiated onto the above-mentioned coated portion at a feeding speed of 2 m / min, following the shape of the barcode. Further, as colorants, high purity silicon carbide (SiC) powder (average particle size 10 to 50 μm), carbon (C) powder (excellent in oxidation resistance, average length 60 to 100 μm, average diameter 10 to 50 μm) are used. Needle coke) and silicon (Si) powder (average particle size 2
(0 to 80 μm) is similarly mixed with a 10% PVA aqueous solution to form slurries, and each slurry is applied to the entire surface of a bar code printed area on a similar quartz glass plate and dried, and then a laser beam is similarly applied to the bar. Irradiation was performed according to the shape of the cord.
【0008】各石英ガラス板の表面には、表1に示すよ
うに、珪素を除き、それぞれこげ茶色から黒色までの色
調でバーコードが印字された。着色剤の製造上の付着生
は、Si3 N4 が最もよく、次いでC,SiC,Siの
順であった。理由は明確でないが、Si3 N4 を用いた
場合は、C,SiC,Siを用いた場合に比べ、作業効
率が20%も向上することが確認された。バーコードが
印字された各石英ガラス板の表面をステンレス質の針で
擦ってみたが、着色剤が剥がれ落ちることはなかった。
又、バーコードが印字された各石英ガラス板を、10%
のフッ酸に15分間浸漬した後、同様に擦ったが、着色
剤は剥離しなかった。一方、バーコードが印字された各
石英ガラス板を、シリコンウエハを存置した大気中にお
いて1000℃の温度で2時間保持したところ、表1に
示すように、シリコンウエハの汚染が認められず、又、
炭素によるバーコードは消失したが、炭化珪素及び窒化
珪素によるバーコードは着色をとどめた。上記各石英ガ
ラス板のバーコードを、バーコードリーダーで読み取っ
たところ容易に読み取りができた。As shown in Table 1, a bar code was printed on the surface of each quartz glass plate in a color tone of dark brown to black except for silicon. Si 3 N 4 was the best in the production of colorants, followed by C, SiC, and Si. Although the reason is not clear, it was confirmed that the working efficiency was improved by 20% when Si 3 N 4 was used as compared with the case where C, SiC, and Si were used. The surface of each quartz glass plate on which the barcode was printed was rubbed with a stainless needle, but the colorant did not peel off.
In addition, 10% of each quartz glass plate with a barcode printed
After being immersed in the hydrofluoric acid for 15 minutes and rubbed in the same manner, the coloring agent was not peeled off. On the other hand, when each of the quartz glass plates on which the barcode was printed was held at a temperature of 1000 ° C. for 2 hours in the atmosphere in which the silicon wafer was placed, as shown in Table 1, no contamination of the silicon wafer was observed, and ,
The carbon barcodes disappeared, but the silicon carbide and silicon nitride barcodes remained colored. When the bar code of each quartz glass plate was read by a bar code reader, it could be easily read.
【0009】[0009]
【表1】 [Table 1]
【0010】なお、着色剤として珪素を用いる場合は、
アルゴンガス等の非酸化性雰囲気下においてレーザー加
熱を行うと、濃暗青灰色でバーコードを印字することが
できた。又、バーコードが炭素を着色剤として印字され
た石英ガラス板を、窒素ガス雰囲気下において1300
℃の温度で10時間保持したところ、バーコードは着色
をとどめていた。When silicon is used as the colorant,
When laser heating was performed in a non-oxidizing atmosphere such as argon gas, the bar code could be printed in dark dark blue gray. In addition, a quartz glass plate having a bar code printed with carbon as a coloring agent was subjected to 1300 in a nitrogen gas atmosphere.
When kept at a temperature of ° C for 10 hours, the bar code remained colored.
【0011】実施例5 ゾル、ゲル法で製作した粒径1μm以下の石英ガス微粉
末10重量部に、平均粒径5μmのSi3 N4 粉末10
重量部を混合し、この混合粉末に10%PVA水溶液2
重量部を混合してスラリーとした。このスラリーを40
メッシュのナイロン篩を通過させて造粒し、乾燥した
後、これを500kg/cm2 の圧力で加圧して直径2
0mm、厚さ10mmの圧粉体とした。この圧粉体を窒
素ガス雰囲気下において1400℃の温度で2時間加熱
し、着色した焼結体を製作し、これを乳鉢にて粉砕して
石英ガラスと着色剤としてのSi3 N4 との混合粉末を
調製した。上記混合粉末を実施例1〜4と同様にスラリ
ーとし、同様の石英ガラス板の表面におけるバーコード
の印字領域全面に塗布し、乾燥した後、実施例1〜4と
同様にレーザー光をバーコードの形状に倣って照射し
た。Example 5 10 parts by weight of fine silica gas powder having a particle size of 1 μm or less produced by the sol or gel method was added to 10 parts of Si 3 N 4 powder having an average particle size of 5 μm.
Part by weight is mixed, and 10% PVA aqueous solution 2 is added to this mixed powder.
Parts by weight were mixed to form a slurry. 40 this slurry
After granulating by passing through a mesh nylon sieve and drying, pressurizing this with a pressure of 500 kg / cm 2 to a diameter of 2
It was a green compact having a thickness of 0 mm and a thickness of 10 mm. This green compact was heated in a nitrogen gas atmosphere at a temperature of 1400 ° C. for 2 hours to produce a colored sintered body, which was crushed in a mortar and mixed with quartz glass and Si 3 N 4 as a coloring agent. A mixed powder was prepared. The mixed powder was slurried in the same manner as in Examples 1 to 4, and was applied to the entire surface of the same quartz glass plate on which the barcode was printed, and after drying, laser light was applied to the barcode in the same manner as in Examples 1 to 4. Irradiation was performed according to the shape.
【0012】印字されたバーコードの付着性は、表1に
示すように、良好であり、シリコンウエハと共に大気中
において1300℃の温度で加熱しても、シリコンウエ
ハは汚染されず、又、バーコードは良好に着色をとどめ
た。又、印字されたバーコードを、バーコードリーダー
で読み取ったところ、容易に読み取りができた。The adhesion of the printed bar code is good, as shown in Table 1, and the silicon wafer is not contaminated by heating at a temperature of 1300 ° C. in the atmosphere together with the silicon wafer, and the bar code is The cord stayed well colored. Further, when the printed bar code was read by a bar code reader, it could be easily read.
【0013】実施例6 炭酸ガスレーザーを使用し、出力7W、送り速度1cm
/1秒で10回走査という条件で、実施例1〜4と同様
の石英ガラス板の表面にバーコードの形状に倣って溝を
形成した。溝の深さは、およそ0.3mmであった。上
記バーコードに倣った溝内に、実施例1のSi3 N4 か
らなるスラリーを塗布し、乾燥した後、実施例1〜4と
同様にレーザー光を照射した。Example 6 Using a carbon dioxide laser, output: 7 W, feed rate: 1 cm
Grooves were formed on the surface of the quartz glass plate in the same manner as in Examples 1 to 4 following the shape of the bar code under the condition of scanning 10 times per second. The groove depth was approximately 0.3 mm. The slurry made of Si 3 N 4 of Example 1 was applied in the groove following the bar code, dried, and then irradiated with laser light as in Examples 1 to 4.
【0014】石英ガラス板には、その表面よりへこんだ
ところに黒色のバーコードが印字され、このバーコード
は、表1に示すように、実施例1と同様の効果が得られ
ると共に、石英ガラス板同志を擦り合わせても、互いに
接触することがなく、剥離することはなかった。On the quartz glass plate, a black bar code is printed in a recessed portion from the surface thereof. As shown in Table 1, the bar code has the same effect as that of Example 1 and the quartz glass plate. Even when the plates were rubbed together, they did not come into contact with each other and did not separate.
【0015】実施例7 実施例6と同様にしてバーコードを印字した。印字され
たバーコードの大きさは、2cm×3.5cmであっ
た。石英ガラス板上に3cm×4cm×0.5mmの透
明な石英ガラス薄板を載置し、上記バーコードを覆った
後、この薄板の全周を直径1mmの透明石英ガラス質溶
接棒を用い、酸水素バーナーを使用して石英ガラス板の
表面と気密に溶接した。Example 7 A bar code was printed in the same manner as in Example 6. The size of the printed barcode was 2 cm × 3.5 cm. A transparent quartz glass thin plate of 3 cm × 4 cm × 0.5 mm was placed on the quartz glass plate, and after covering the bar code, the entire circumference of this thin plate was covered with a transparent quartz glass-based welding rod with a diameter of 1 mm. The surface of the quartz glass plate was hermetically welded using a hydrogen burner.
【0016】上記石英ガラス薄板で被覆されたバーコー
ドは、表1に示すように、シリコンウエハを存置した大
気中において、1200℃の温度で100時間保持して
もシリコンウエハの汚染が認められないと共に、褪色も
せず、バーコードリーダーでの読み取りが容易であっ
た。なお、着色剤を炭素とし、実施例6と同様にしてバ
ーコードを印字し、かつ上述したように透明な石英ガラ
ス薄板でバーコードを被覆したものは、シリコンウエハ
を存置した大気中において1200℃の温度で10時間
保持してもシリコンウエハの汚染が認められないと共に
バーコードは薄れず、バーコードリーダーでの読み取り
が容易であった。As shown in Table 1, the bar code covered with the above-mentioned quartz glass thin plate shows no contamination of the silicon wafer even if it is held at a temperature of 1200 ° C. for 100 hours in the atmosphere in which the silicon wafer is kept. At the same time, it did not fade and was easy to read with a barcode reader. The colorant was carbon, the bar code was printed in the same manner as in Example 6, and the bar code was covered with the transparent quartz glass thin plate as described above. The silicon wafer was not contaminated and the bar code did not fade even after being held at the temperature of 10 hours, and it was easy to read with a bar code reader.
【0017】なお、上記各実施例においては、記号をバ
ーコードとする場合について述べたが、これに限定され
るものではなく、表面又は表面に形成した溝若しくは凹
部内に付される記号は、文字又は算用数字等であっても
よく、この場合には、OCRで読み取られる。又、レー
ザーは、ガスレーザーに限らず、固体レーザーであって
もよい。In each of the above embodiments, the case where the symbol is a bar code is described, but the present invention is not limited to this, and the symbol attached to the surface or the groove or recess formed in the surface is as follows. It may be a character or a numeral, and in this case, it is read by the OCR. Further, the laser is not limited to the gas laser and may be a solid laser.
【0018】[0018]
【発明の効果】以上説明したように、本発明の第1の半
導体製造プロセス用石英ガラス製品及びその第1、第2
の製造方法によれば、石英ガラス製品の表面又は表面に
形成した溝若しくは凹部内に付着された記号としての着
色剤が、使用環境の汚染源となることがないので、半導
体を汚染することがないと共に、長期間に亘って熱や酸
等による褪色や変質又は消失を生じることがないので、
石英ガラスへの付着を堅固とし得、かつ光学的な読み取
りを可能にすることができる。第2の石英ガラス製品及
びその第3の製造方法によれば、着色剤が、こげ茶から
黒色までの色調を呈するので、光学的な読み取りを容易
に行うことができる。又、第3の石英ガラス製品及びそ
の第4の製造方法によれば、記号が石英ガラス薄板によ
って保護されるので、記号を長期間によって鮮明に保持
できると共に、半導体を汚染することは全くない。As described above, the first quartz glass product for semiconductor manufacturing process of the present invention and the first and second quartz glass products thereof are provided.
According to the manufacturing method of 1., since the coloring agent as a symbol attached to the surface of the quartz glass product or the groove or the recess formed on the surface does not become a pollution source of the use environment, it does not contaminate the semiconductor. At the same time, it does not fade or deteriorate or disappear due to heat or acid over a long period of time.
Adhesion to quartz glass can be robust and can allow optical reading. According to the second quartz glass product and the third method for manufacturing the same, the colorant exhibits a color tone from dark brown to black, so that optical reading can be easily performed. Further, according to the third quartz glass product and the fourth manufacturing method thereof, since the symbol is protected by the quartz glass thin plate, the symbol can be clearly held for a long period of time and the semiconductor is never contaminated.
Claims (7)
属元素や遷移元素の含有率が極めて少ないほぼ黒色の着
色剤を、記号の形状に倣って石英ガラス製品の表面又は
表面に形成した溝若しくは凹部内にこれらの溶融により
付着させたことを特徴とする半導体製造プロセス用石英
ガラス製品。1. A groove formed by forming a substantially black colorant having excellent heat resistance and acid resistance and having an extremely low content of alkali metal elements and transition elements on the surface of a quartz glass product or on the surface according to the shape of the symbol. Alternatively, a quartz glass product for a semiconductor manufacturing process, characterized in that these are adhered to the inside of the recess by melting.
しくは窒化珪素又はこれらと石英ガラスとの混合物であ
ることを特徴とする請求項1記載の半導体製造プロセス
用石英ガラス製品。2. The quartz glass product for a semiconductor manufacturing process according to claim 1, wherein the colorant is silicon, carbon, silicon carbide, silicon nitride, or a mixture of these and quartz glass.
密に被覆されていることを特徴とする請求項1又は2記
載の半導体製造プロセス用石英ガラス製品。3. The quartz glass product for a semiconductor manufacturing process according to claim 1, wherein the groove or the recess is airtightly covered with a thin quartz glass plate.
属元素や遷移元素の含有率が極めて少ないほぼ黒色の着
色剤を、石英ガラス製品における記号の印字領域の表面
に塗布し、この塗布部分にレーザー光を記号の形状に倣
って照射することを特徴とする半導体製造プロセス用石
英ガラス製品の製造方法。4. A substantially black colorant having excellent heat resistance and acid resistance and having an extremely low content of alkali metal elements and transition elements is applied to the surface of the printed area of the symbol in the quartz glass product, and the applied portion is applied. A method of manufacturing a quartz glass product for a semiconductor manufacturing process, which comprises irradiating a laser beam according to the shape of a symbol.
射して記号の形状に倣った溝若しくは凹部を形成し、こ
の溝若しくは凹部内に耐熱性、耐酸性に優れ、かつアル
カリ金属元素や遷移元素の含有率が極めて少ないほぼ黒
色の着色剤を塗布し、この塗布部分にレーザー光を照射
することを特徴とする半導体製造プロセス用石英ガラス
製品の製造方法。5. The surface of the quartz glass product is irradiated with a laser beam to form a groove or a recess following the shape of the symbol, and the groove or the recess has excellent heat resistance and acid resistance, and an alkali metal element or transition. A method for manufacturing a quartz glass product for a semiconductor manufacturing process, which comprises applying a substantially black colorant having an extremely small content of elements and irradiating the applied portion with laser light.
しくは窒化珪素又はこれらと石英ガラスとの混合物であ
ることを特徴とする請求項4又は5記載の半導体製造プ
ロセス用石英ガラス製品の製造方法。6. The production of a quartz glass product for a semiconductor manufacturing process according to claim 4, wherein the colorant is silicon, carbon, silicon carbide or silicon nitride, or a mixture of these with quartz glass. Method.
くは凹部を石英ガラス薄板で覆い、この石英ガラス薄板
の全周を表面と気密に溶接することを特徴とする請求項
5又は6記載の半導体製造プロセス用石英ガラス製品の
製造方法。7. The method according to claim 5, wherein after the irradiation with the laser beam, all the grooves or recesses are covered with a quartz glass thin plate, and the entire circumference of the quartz glass thin plate is hermetically welded to the surface. Manufacturing method of quartz glass products for semiconductor manufacturing process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7822395A JPH08245230A (en) | 1995-03-09 | 1995-03-09 | Quartz glass product for semiconductor production process and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7822395A JPH08245230A (en) | 1995-03-09 | 1995-03-09 | Quartz glass product for semiconductor production process and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08245230A true JPH08245230A (en) | 1996-09-24 |
Family
ID=13656058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7822395A Pending JPH08245230A (en) | 1995-03-09 | 1995-03-09 | Quartz glass product for semiconductor production process and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08245230A (en) |
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---|---|---|---|---|
JP2002043398A (en) * | 2000-07-27 | 2002-02-08 | Hitachi Kokusai Electric Inc | Substrate processing device and method of manufacturing semiconductor device |
JP2010208874A (en) * | 2009-03-09 | 2010-09-24 | Japan Siper Quarts Corp | Closure for silica glass crucible, silica glass crucible and method of handling the same |
JP2011105533A (en) * | 2009-11-13 | 2011-06-02 | Japan Siper Quarts Corp | Lid for quartz glass crucible, quartz glass crucible, and method for handling the crucible |
WO2011071176A1 (en) * | 2009-12-11 | 2011-06-16 | ジャパンスーパークォーツ株式会社 | Silica glass crucible |
JP2012140299A (en) * | 2010-12-29 | 2012-07-26 | Japan Siper Quarts Corp | Silica glass crucible and manufacturing method therefor |
JP2021519384A (en) * | 2018-03-26 | 2021-08-10 | アイクストロン、エスイー | CVD equipment parts with individual identifiers and their information transmission methods |
-
1995
- 1995-03-09 JP JP7822395A patent/JPH08245230A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002043398A (en) * | 2000-07-27 | 2002-02-08 | Hitachi Kokusai Electric Inc | Substrate processing device and method of manufacturing semiconductor device |
JP4653875B2 (en) * | 2000-07-27 | 2011-03-16 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
JP2010208874A (en) * | 2009-03-09 | 2010-09-24 | Japan Siper Quarts Corp | Closure for silica glass crucible, silica glass crucible and method of handling the same |
US9260795B2 (en) | 2009-03-09 | 2016-02-16 | Japan Super Quartz Corporation | Closure for silica glass crucible, silica glass crucible and method of handling the same |
JP2011105533A (en) * | 2009-11-13 | 2011-06-02 | Japan Siper Quarts Corp | Lid for quartz glass crucible, quartz glass crucible, and method for handling the crucible |
WO2011071176A1 (en) * | 2009-12-11 | 2011-06-16 | ジャパンスーパークォーツ株式会社 | Silica glass crucible |
JP4875229B2 (en) * | 2009-12-11 | 2012-02-15 | ジャパンスーパークォーツ株式会社 | Silica glass crucible |
US9115445B2 (en) | 2009-12-11 | 2015-08-25 | Sumco Corporation | Vitreous silica crucible |
JP2012140299A (en) * | 2010-12-29 | 2012-07-26 | Japan Siper Quarts Corp | Silica glass crucible and manufacturing method therefor |
JP2021519384A (en) * | 2018-03-26 | 2021-08-10 | アイクストロン、エスイー | CVD equipment parts with individual identifiers and their information transmission methods |
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