JPH08236692A - Hybrid integrated circuit device and manufactur thereof - Google Patents

Abstract

PURPOSE: To realize quite effective noise shield effect by feeding a low or high power supply potential to a conductive sealing resin directly touching at least one of the rear side of a semiconductor chip or the other electrode side of a passive chip device. CONSTITUTION: Wiring patterns 12, 14 are connected, respectively, with end face electrodes 15 arranged on the circumferential side face of a resin sealed recess 11. In this regard, a multilayer resin sealing structure comprising a nonconductive sealing resin 18 filling the bottom face side and a conductive sealing resin 19 filling the upper part thereof is employed. The conductive sealing resin 19 is applied with any one of low or high power supply potentials and constructed to touch at,least one of the rear side of a semiconductor chip 16 or the other electrode side of passive chip device 17a-17f directly. With such structure, quite effective noise shield effect is provided by the conductive sealing resin 19.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to a hybrid integrated circuit device having a thin and leadless type surface mount hybrid integrated circuit device with noise suppression.

[0002]

2. Description of the Related Art In recent years, as semiconductor elements have been miniaturized and the scale of circuits accommodated in semiconductor devices has further increased, multifunction devices have been developed to meet the needs of consumer equipment, industrial equipment and various other industrial fields. As a result, various types of mounting semiconductor devices have been developed.

One of these mounting forms is a hybrid integrated circuit device. This device implements system-scale functions by mixing bare chips such as microcomputers, memories, gate arrays, etc., or passive chip parts such as resistors, capacitors, etc., which are interconnected by a wiring pattern formed on a wiring board. Is what you are trying to do. For some applications, only bare chips or only passive chip components are mounted.

The demands for the hybrid integrated circuit device having such enhanced functions include a countermeasure against external noise or a noise that mutually affects between mounted chips, in addition to an increase in speed, an increase in frequency, and an increase in power. Referring to FIG. 5 which is a cross-sectional view showing an example of this type of conventional hybrid integrated circuit device in consideration of a noise countermeasure, a passive chip including a semiconductor chip 32 and a noise filter is provided on the bottom surface of a concave portion 31 of a wiring board 30. The chip components 33a to 33c are mounted.
At this time, the electrodes of the semiconductor chip 32 and the wiring pattern 34 formed by the conductor layer provided on the wiring board 30 are electrically connected by bonding wires 35, and the passive chip components 33a to 33c are electrically connected by a conductive adhesive or the like. Connection is achieved. In the case of a flip chip in which the semiconductor chip is mounted with the element formation surface facing downward (face down), connection with electrodes on the wiring substrate surface is performed by solder bumps.

The concave portion 31 of the wiring board 30 is sealed with a non-conductive sealing resin 36 (shaded portion in the figure), and a wiring pattern 37 is provided on the back surface as necessary to form a through hole 38.
Thus, the shield structure is formed by making a through connection with the wiring pattern 34 or adhering the shield plate 39 to the sealing surface.

Furthermore, instead of providing the shield plate 39, the package itself may be mounted upside down on the motherboard, and a wiring pattern may be provided on the surface of the motherboard corresponding to the resin sealing surface.

On the other hand, an example of a method for mounting a passive chip component is described in Japanese Patent Application Laid-Open No. 3-256392. FIG. 6 showing a cross-sectional view of a hybrid integrated circuit device described in the publication is an example of a case where a passive chip component is mounted upright. In this case, a lower electrode 41a is connected to a mounting electrode 40a. The electrode 41b on the upper side of the passive chip component 42 and the mounting electrode 40b on the wiring board 43 side are connected using a bonding wire 44.

As described above, it is the same as the other prior arts in that a bonding wire which easily becomes a noise antenna must be used and that the electrodes 24 and 25 are still two on the substrate surface.

[0009]

In this conventional hybrid integrated circuit device, when a passive chip component is mounted, both electrodes of the passive chip component are connected to the wiring pattern on the substrate surface either directly or by wires. Therefore, it is necessary to secure each of the two connecting electrodes on the substrate, which increases the mounting area. For this reason, there is a problem that it is difficult to arrange (layout) passive chip components in a dense portion of the wiring pattern near the semiconductor chip. Although it is effective to dispose a bypass capacitor and a filter circuit as close as possible to the active element as a source for noise removal, as described above, each of the two connection electrodes is connected to the substrate. The problem of having to put it on made it difficult.

On the other hand, the face-down method of mounting the semiconductor chip on the inside out by the bump connection described above is often performed by a flip chip or the like, but it is established as a method of connecting the back surface to a stable potential which is a power supply potential or a ground potential. There is also a problem that it can be applied only to limited semiconductor chips. In order to prevent noise, the wire becomes an antenna for noise, so it is more advantageous to mount it face down without using the wire and because the semiconductor chip itself can have the effect of a shield plate. Obviously, since the method for connecting the back surface of the chip to the stable potential has not been established as described above, its range of application has been limited.

SUMMARY OF THE INVENTION An object of the present invention has been made in view of the above-described problems. A semiconductor chip is mounted face-down on a wiring board by bump connection, and a shield is provided together with a passive chip component of a peripheral circuit component. It is an object of the present invention to provide a hybrid integrated circuit device having the above-described structure and a method of manufacturing the same.

[0012]

A feature of the hybrid integrated circuit device of the present invention is that a concave portion having a predetermined size and depth is formed on one surface of a multilayer wiring board having a plurality of internal conductor layers.
At least one of a semiconductor chip and a passive chip component is mounted and connected to a wiring pattern formed on the bottom surface of the concave portion and the internal conductor layer on the other surface, and when the semiconductor chip is mounted, each electrode is connected to the bottom surface. When the passive chip component is mounted, each electrode thereof is connected to the wiring pattern on the bottom surface using a conductive adhesive, and these wiring patterns are connected to the wiring on the other surface through through holes. A hybrid integrated circuit device wherein each of the wiring patterns is connected to an end surface electrode provided on a side surface of a peripheral portion of the concave portion, and the inside of the concave portion is resin-sealed; The stop is a non-conductive sealing resin filled on the bottom side and a conductive sealing resin filled on the non-conductive sealing resin. The conductive sealing resin is supplied with one of a lower power supply potential or a higher power supply potential, and has at least a back surface side of the semiconductor chip and another electrode side of the passive chip component. It has a structure in which one side is directly contacted.

Further, at least one semiconductor chip and at least one passive chip component can be mounted.

Further, at least one semiconductor chip is mounted in the recess, each of the semiconductor chips is face-down, each electrode is bump-connected to a corresponding wiring pattern on the bottom surface, and the non-conductive sealing resin is the semiconductor chip. The chip may be filled to a height at which the back surface is exposed, and the conductive sealing resin may be laminated and sealed on the non-conductive sealing resin layer including the exposed back surface.

Further, at least one of the passive chip components is mounted in the recess, and at least a part of the passive chip components is mounted upright so that only the one electrode side is connected to the wiring pattern on the bottom surface. The non-conductive sealing resin is filled to a height at which the other electrode side of the passive chip component is exposed, and the conductive sealing resin is placed on the non-conductive sealing resin layer including the exposed other electrode side. The sealing resin can be laminated and sealed.

Further, a solid pattern formed on the entire surface of the internal conductor layer in the peripheral portion of the substrate left by the opening is disposed so as to surround the peripheral portions of the side and bottom surfaces of the substrate, and is integrated with the conductor layer. A shield layer formed by being electrically connected to the conductive sealing resin end surface on the inner wall surface of the recess may be provided.

A feature of the method of manufacturing a hybrid integrated circuit device according to the present invention is that a concave portion having a predetermined size and depth is formed on one surface of a multilayer wiring board having a plurality of internal conductor layers, and a bottom surface of the concave portion and a concave portion are formed. At least one semiconductor chip and at least one passive chip component are connected and mounted on a wiring pattern formed on the internal conductor layer on the other surface, and the semiconductor chip performs wire bonding connection of each electrode to the wiring pattern on the bottom surface, The passive chip component has its electrodes adhered to the wiring pattern on the bottom surface using a conductive adhesive, and these wiring patterns are connected to the wiring pattern on the other surface via through holes, respectively, and the recess is formed of resin. A method of manufacturing a hybrid integrated circuit device for sealing; at least one semiconductor chip is face-down in the concave portion of the wiring substrate; A first step of connecting bumps to the wiring pattern on the bottom surface, and only one electrode on one side of the bottom surface of the wiring board after the step is completed with a conductive adhesive in a state in which at least one passive chip component is erected. A second step of adhering, curing and curing the wiring pattern of the semiconductor chip; A third step of filling with a conductive sealing resin, curing and curing, and a conductive sealing to a height covering all of the back surface and the electrodes exposed at an upper portion of the non-conductive sealing resin after the curing. And a fourth step of filling and curing and curing the stop resin.

[0018]

According to the hybrid integrated circuit of the present invention, a concave portion is formed on the upper surface of a multilayer wiring board having an internal conductor wiring layer for forming a wiring pattern, excluding the peripheral portion of the substrate, thereby exposing a part of the conductor wiring layer. . First, when mounting passive chip components or chip jumpers for forming bypass capacitors, filters, etc. in this recess, stand upright so that only one electrode of these chip components is electrically connected to the wiring board. After mounting, the non-conductive encapsulating resin is filled and cured to a height from the bottom surface of the recess to the height at which the upper electrode is exposed including the lower electrode of the chip component and cured. In addition, the upper electrode is brought into direct contact with the conductive sealing resin layer by filling, curing, and laminating the conductive sealing resin on the non-conductive sealing resin to a level covering the upper electrode of the chip component. To make an electrical connection.

When the semiconductor chip is mounted in the concave portion, the semiconductor chip is mounted face-down with the element forming surface of the semiconductor chip facing downward, and the semiconductor chip is non-conductive from the bottom surface of the concave portion to a height at which the back surface portion of the semiconductor chip is exposed. Filling and curing the conductive sealing resin, curing it, and filling and curing the conductive sealing resin on the non-conductive sealing resin to a level that covers the exposed back surface of the semiconductor chip, thereby conducting the back surface The electrical connection can be made by directly contacting the conductive sealing resin layer.

Further, in any of the above cases, when the conductive sealing resin layer itself is connected to a stable potential supplied from the outside, a wiring pattern corresponding to the stable potential in the wiring board is provided via a chip jumper. An internal conductor layer close to the upper surface of the peripheral portion is formed as a solid pattern so that it can be electrically connected or electrically connected to the conductive sealing resin that is filled in the concave portion of the wiring board in advance, and the side surface and the peripheral portion of the bottom surface of the substrate are formed. The shield layer is formed integrally with the conductor layer that surrounds the shield, and the stable potential supplied to this shield layer via the external electrode is also supplied to the back surface of the semiconductor chip via the conductive sealing resin. It is done.

Therefore, the conductive sealing resin can serve as a shield.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

FIG. 1A is a sectional view of the first embodiment of the present invention, and FIG. 1B is a plan view thereof. Referring to FIG. 1A and FIG. 1B, a concave portion 11 is opened in a portion other than the peripheral portion on the upper surface of a multilayer wiring board 10a made of, for example, glass epoxy resin. The size and depth of the opening are determined in advance according to the size and quantity of components to be mounted. Through this opening, a wiring pattern 12 previously arranged for connecting components to be mounted is exposed on the bottom surface of the concave portion 11. The wiring pattern 12 is appropriately connected to the wiring pattern 14 provided on the back surface side by a through hole 13 as necessary.

Further, the wiring pattern 14 on the back surface side is directly or indirectly connected via mounted components to the end surface electrodes 15 arranged on the peripheral portion of the substrate by using the wiring pattern 14 for a predetermined connection. ing. The end surface electrode 15 is a so-called external terminal of a package, and is composed of a group of conductors arranged at an interval from each other, and has a plurality of different potentials.

In the recess 11 of the wiring board 10 described above, for example, a semiconductor chip 16 and passive chip components 17a to 17f including a chip jumper are mounted. This semiconductor chip 16 is face-down and each electrode has a wiring pattern 1
2 are respectively connected by bumps.

On the other hand, the passive chip components 17a to 17f are
In the case of the conventional example, the two electrodes of the chip itself were connected to the wiring pattern 12 on the bottom side of the concave portion, respectively.
In this embodiment, the wiring pattern 1 is formed only on one electrode.
The two are mounted upright while being connected to each other.

The recess 11 is filled with a non-conductive sealing resin 18 (shown by diagonal meshes in the figure) from the bottom surface to a height at which the back surface of the semiconductor chip 16 and the other electrode of the passive chip components 17a to 17f are exposed. Is filled. The non-conductive sealing resin 18 is filled with a conductive sealing resin 19 (shown by dotted meshes in the figure) to the same height as the upper surface of the peripheral portion of the substrate, and the resin is sealed.

For example, when the chip jumper is a passive chip component 17b, the conductive sealing resin 19 is formed by the chip jumper 17b and the wiring pattern 12 and the through-hole 13.
In addition, through a predetermined pattern (not shown) of the wiring patterns 14, the end face electrode 15 is electrically connected to an electrode to which a stable potential of a power supply potential or a ground potential is externally supplied.

According to the structure shown in this embodiment, the conductive sealing resin 19 connects the back surface of the semiconductor chip 16 and the other electrode of the passive chip components 17a to 17b to a stable potential, so that a shielding effect can be obtained. I can do it.

Referring to FIG. 2A showing a cross-sectional view of the second embodiment of the present invention and FIG. 2B showing a plan view thereof, an example in which a package having a side shield structure is formed. It is. In the first embodiment, the end face electrode 15
Are so-called external terminals of a package, which form a group of conductors arranged at intervals from each other and have a plurality of different potentials. In the second embodiment, these are ground potentials or power supply potentials. A single solid pattern is provided over the entire periphery of the substrate having a stable potential.

That is, the difference from the first embodiment is that the conductive encapsulating resin 19 is formed on the inner conductor layer 20a of the wiring board 10b.
And the inner conductor layer 20a
Is a side surface 20b and a bottom peripheral portion 20c of the wiring board 10b.
Side shield structure (20a ~
20b to 20c). The wiring board 10b is arranged so as to surround the entire periphery of the wiring board 10b from the side surface, and the external electrode 21 is provided on the bottom periphery 20c.
Further, the wiring pattern 14 on the back side is directly or indirectly through a mounted component, and the wiring pattern 12 is through a through hole 13 inside the bottom peripheral edge 20c of the wiring board 10b. And is connected to an external electrode 23 provided in the external electrode region 22. The other components are the same as those of the first embodiment, and the description of the configuration here is omitted.

According to the configuration of the second embodiment described above, a stable potential is supplied from the external electrode 21 to the extended internal conductor layers 20a-20c, and the extended internal conductor layers 20a-20c shield the extended internal conductor layers 20a-20c. You can get the effect.

As a modification of the above-described embodiment, FIG. 3 is a sectional view showing a case where a plurality of conductive sealing resin layers are provided.
Referring to (a), a conductive sealing resin layer 19a, a non-conductive resin sealing layer 18a, and a conductive sealing resin layer 19a are sequentially laminated and formed on the electro-resin sealing layer 18b. The other electrodes of the passive chip components 17a and 17b are connected to the conductive sealing resin layer 19a, and the back surfaces of the semiconductor chip 16 and the passive chip components 17c and 17d and the other electrode are connected to the conductive sealing resin layer 19b. Therefore, it is possible to supply the stable electric potential separately to any one of the stable electric potentials for each mounted component.

Referring to FIG. 3B, which is a cross-sectional view showing a case where a plurality of recesses are provided, a passive chip component 17a and a semiconductor chip 16 are mounted in the recess 11a.
The passive chip components 17b to 17d are mounted on 1b, and each recess can have an independent function.

The method of manufacturing the hybrid integrated circuit device described in the first and second embodiments is a sectional view of the manufacturing process, and shows a bump connecting process of the semiconductor chip in FIG.
(A), FIG. 4 (b) showing a second step of bonding the passive chip component, FIG. 4 (c) showing a third step of filling the recess with a non-conductive sealing resin, and conductive sealing. Referring to FIG. 4D showing a fourth step of filling the resin, first, a wiring board in which a concave portion is formed in a multilayer wiring board 10a or 10b formed by a known etching process on a glass epoxy resin substrate. Then, at least one semiconductor chip 16 is mounted face-down in this recess by a known method such as a solder bump (FIG. 4A).

Next, in a state where the passive chip components 17a to 17f including those for the noise filter are erected, only the electrodes on one side (lower side) are mounted with a conductive adhesive or the like, and then cured. It is cured (FIG. 4B).

Thereafter, filling is performed to a predetermined depth by using an epoxy-based non-conductive sealing resin 18 having a high insulating property. At this time, at least all the portions of the semiconductor chip 16 and the passive chip components 17a to 17f that are electrically connected to the wiring patterns 12 that are in contact with the lower electrodes are covered, and the back surface of the semiconductor chip 16 and the passive chip The upper electrodes of the parts 17a to 17f are all filled up to the exposed height, and cured and cured in about 150 ° 30 minutes (FIG. 4C).

Further, after that, the non-conductive sealing resin 18
Of the electrically conductive encapsulation resin 19 such as Cu paste having a high electric conductivity up to the height covering the upper surface of the semiconductor chip 16 and all the electrodes of the passive chip components 17a to 17f exposed from the non-conductive encapsulation resin. Is filled and cured at about 150 ° C. for about 30 minutes to cure (FIG. 4 (d)).

After the fourth step, although not shown in the figure, a protective layer such as a resist may be printed on the protective layer if necessary.

In the case of the manufacturing method of the second embodiment, the wiring substrate 10b in the first step is integrated with the side shield structures 20b and 20c as a single solid pattern disposed over the entire peripheral portion of the substrate. The internal conductor layer 20a is provided in advance so that The position of the conductor layer in the height direction is such that the portion exposed on the inner wall surface of the concave portion of the internal conductor layer 20a comes into contact with the end surface of the conductive sealing resin 19 when sealing with the conductive sealing resin 19. It is determined in consideration of the range of the thickness of the layer of the conductive sealing resin 19.

Further, on the back surface side of the wiring board 10b, the projecting electrodes 23 as external terminals are arranged in the board peripheral portion 22 inside the side surface shield structure 20c, and are connected to the wiring patterns 12 on the bottom surface of the concave portion. The manufacturing process is the same as that described above, except that one is used.

Regarding the height of the non-conductive encapsulating resin 18, that is, the layer thickness, the thickness of the current semiconductor chip 16 is 0.
3 mm to 0.4 mm, bump height is about 0.1 mm, passive chip components 17a to 17f have an electrode thickness of 0.2 m
m, about 0.25 mm to 0.1 mm.
It should be adjusted within about 35 mm.

The height adjustment of a width of about 0.1 mm has no problem with the current technology. Of course, when the semiconductor chip 16 or the passive chip components 17a to 17f is applied to only one of them, it is sufficient to consider only one of them, so that the margin of the width described above is further expanded.

As described above, according to the hybrid integrated circuit device and the manufacturing method thereof of the present invention, for example, as described above, the bypass capacitor between the power supply potential and the ground potential and each noise filter are noise generating sources. Although it has to be arranged as close as possible to a certain semiconductor chip, in the hybrid integrated circuit device of the present invention, the passive chip components of its constituent elements can be mounted upright, and at the same time, the electrodes on one side can be placed in the recesses. Since it can be connected to a stable potential at a place, the pattern layout of the wiring board becomes extremely easy. Further, since the mounting area is reduced to 以下 or less of the original area by being erected, the mounting area can be easily arranged near the semiconductor chip having a high pattern arrangement density, so that more effective noise removal can be achieved.

In mounting a semiconductor chip, a means for easily connecting the back surface portion to a stable potential can be provided, so that the application range of the flip chip mounting can be greatly expanded. As described above, the connection by the bonding wire makes the wire easy to become an antenna, and requires a mounting area of about twice, so that the bypass capacitor and the passive chip component for the filter are further away from the semiconductor chip. Clearly, flip-chip mounting is also advantageous in terms of noise.

In the case where the semiconductor chip and the passive chip components are mixed, the connection to the stable potential required for each of the semiconductor chips is particularly required.
A very effective effect is that the processing can be performed by batch processing without dividing the process.

In many cases, stable connection cannot be expected by bonding the substrate conductor layer, the printed conductor layer, or the shield metal plate due to the height difference of the mounted components, but as in the hybrid integrated circuit device of the present invention, According to the filling of the conductive sealing resin, all variations in the height of the mounted components can be absorbed, and a stable connection can be obtained.

Further, as shown in the second embodiment, it is easy to make an electrical connection between the conductive sealing resin and the conductor layer inside the substrate. The external circuit can be connected to a stable potential, so that a good noise shield structure in the upper direction of the package in which the external circuits are integrated can be realized at the same time.

Furthermore, as in the second embodiment, the side surface of the package is also shielded by plating or the like and is connected to the back surface solid pattern, and the solder between the side surface conductor lower part and the mass board mounting this hybrid integrated circuit device. If a seal or the like is also used, noise reduction of 20 dB to 30 dB can be achieved.

As a side effect, according to the structure of the present invention, the back surface of the semiconductor chip is in direct contact with the conductive sealing resin having a large thermal conductivity, and the layer thickness thereof is comparatively several hundred μ. Since it becomes thick, it also functions as a good heat dissipation structure. In particular, when the above-described shield structure is adopted, heat is more effectively dissipated to the wiring board through the conductor portion of the shield, so that it is more effective.

The shift of various characteristics of the IC device due to heat usually deteriorates a noise margin for malfunction.
Therefore, the heat dissipation structure is an important factor from the viewpoint of noise.

[0052]

As described above, according to the hybrid integrated circuit device and the method of manufacturing the same of the present invention, a concave portion is provided in a wiring board,
A semiconductor chip and / or a passive chip component or both are mounted in the recess and resin-sealed. The semiconductor chip is mounted face down on the bottom of the recess, and the passive chip component is mounted upright to mount the semiconductor. By aligning the electrodes on the back surface of the chip and one side of the passive chip component in the direction above the recess, a state in which the electrodes on the other side connected to the bottom surface are vertically separated is formed, and the resin for sealing the recess is formed. It has a multilayer structure including a non-conductive encapsulating resin layer in contact with the bottom surface of the recess and a conductive encapsulating resin layer above it, and the back surface of the semiconductor chip and the electrode on one side of the passive part chip component are exposed from the bottom surface of the recess. Fill and cure non-conductive encapsulating resin up to the height, cure, and guide onto non-conductive encapsulating resin up to the height that covers the exposed back surface and one side electrode. By filling and curing the conductive encapsulation resin, the electrical connection can be made with the back surface part and the electrodes on one side being in direct contact with the conductive encapsulation resin layer. Is connected to a stable potential via an external terminal, the conductive sealing resin layer can exert a very effective shield effect against noise.

Further, the shield structure is such that the inner conductor layer at the peripheral portion of the substrate, which is in end-face contact with the conductive resin layer, is integrated with the conductor layer formed so as to surround the side face and the peripheral portion of the bottom surface. Since it can also be done, the same shielding effect can be obtained.

Further, since it is possible to simultaneously realize the flip chip mounting application, the layout with a high degree of freedom of the filter element by the passive chip component, the good shield structure and the heat radiation structure, the noise countermeasure can be made very easily and effectively. It is possible to make full use of the inherent performance of the device.

[Brief description of drawings]

FIG. 1A is a cross-sectional view showing a hybrid integrated circuit device according to a first embodiment of the present invention. FIG. 2B is a plan view of the first embodiment.

FIG. 2A is a sectional view showing a hybrid integrated circuit device according to a second embodiment of the present invention. (B) It is a top view of a 2nd Example.

FIG. 3A is a cross-sectional view when a plurality of conductive sealing resin layers are provided. (B) It is sectional drawing at the time of providing a some recessed part.

FIG. 4A is a cross-sectional view showing a bump connecting process for a semiconductor chip. (B) It is sectional drawing which showed the 2nd process of adhering a passive chip component. (C) is a sectional view showing a third step of filling a concave portion with a non-conductive sealing resin. FIG. 9D is a cross-sectional view illustrating a fourth step of filling the conductive sealing resin.

FIG. 5 is a sectional view showing an example of a conventional hybrid integrated circuit device.

FIG. 6 is a cross-sectional view showing another example of a conventional hybrid integrated circuit device.

[Explanation of symbols]

10a, 30, 43 Wiring board 10b Wiring board having side shield structure 11, 11a, 11b 31 Recessed portion 12, 34 Bottom wiring pattern 13, 38 Through hole 14, 37 Back wiring pattern 15 End surface electrode 16, 32 Semiconductor Chips 17a to 17f, 33a to 33c, 42 Passive chip components 18, 18a, 18b, 36 Non-conductive encapsulating resin 19, 19a, 19b Conductive encapsulating resin 20a Internal conductor layer (conductor solid pattern) 20b Side surface of wiring board 10 Shield 20c Bottom edge peripheral shield 21,22 Projection electrode (external electrode) 23 External electrode area 35,44 Wire 39 Shield plate 40a, 40b Mounting electrode 41a Upper electrode of passive chip component 41b Lower electrode of passive chip component

Claims (6)

[Claims] 1. A multilayer wiring board having a plurality of internal conductor layers, a concave portion having a predetermined size and depth is opened on one surface of a multilayer wiring substrate, and a wiring formed on the bottom surface of the concave portion and the internal conductor layer on the other surface. At least one of a semiconductor chip and a passive chip component is connected to and mounted on the pattern,
When mounting the semiconductor chip, each electrode thereof is wire-bonded to the wiring pattern on the bottom surface, and when mounting the passive chip component, each electrode is connected to the wiring pattern on the bottom surface by using a conductive adhesive, The patterns are respectively connected to the wiring patterns on the other surface via through holes, and these wiring patterns are connected to the end surface electrodes arranged on the peripheral side surfaces of the recess, and the inside of the recess is sealed with resin. In the hybrid integrated circuit device, the resin encapsulation is a multi-layer including a non-conductive encapsulating resin filled on the bottom surface side and a conductive encapsulating resin filled on the non-conductive encapsulating resin. The conductive encapsulating resin is supplied with a low-potential power source potential or a high-potential power source potential, and is provided on the back surface side of the semiconductor chip and the receiving surface. Hybrid integrated circuit device characterized by having at even contacted the other hand directly to the side structure of the other electrode side of the chip component. 2. The hybrid integrated circuit device according to claim 1, wherein at least one each of said semiconductor chip and said passive chip component is mounted. 3. The semiconductor device according to claim 1, wherein at least one semiconductor chip is mounted in the recess, and each of the semiconductor chips is face-down, and each electrode is bump-connected to a corresponding wiring pattern on the bottom surface. The hybrid integrated circuit according to claim 1, wherein the chip is filled to a height at which the back surface of the chip is exposed, and the conductive sealing resin is laminated and sealed on the non-conductive sealing resin layer including the exposed back surface. Circuit device. 4. The at least one passive chip component is mounted in the recess, and at least a part of the passive chip component is mounted upright so that only the one electrode side is connected to the wiring pattern on the bottom surface. The non-conductive sealing resin is filled up to a height at which the other electrode side of the passive chip component is exposed, and the conductive sealing is formed on the non-conductive sealing resin layer including the exposed other electrode side. 3. The hybrid integrated circuit device according to claim 1, wherein a resin is laminated and sealed. 5. A solid pattern formed on the entire surface of the internal conductor layer in the peripheral portion of the substrate left by the opening is provided so as to surround the side surface and the peripheral portion of the bottom surface, and is integral with the conductor layer, and The hybrid integrated circuit device according to claim 1, further comprising a shield layer formed by being electrically connected to the end surface of the conductive sealing resin on the inner wall surface of the recess. 6. A concave portion having a predetermined size and depth is formed on one surface of a multilayer wiring board having a plurality of internal conductor layers,
At least one semiconductor chip and at least one passive chip component are connected and mounted on a wiring pattern formed on the bottom surface of the recess and the internal conductor layer on the other surface, and the semiconductor chip attaches each electrode to the wiring pattern on the bottom surface. Wire bonding connection, the passive chip component adheres its electrodes to the wiring pattern on the bottom surface using a conductive adhesive,
A method for manufacturing a hybrid integrated circuit device in which these wiring patterns are respectively connected to the wiring patterns on the other surface via through holes and the recesses are sealed with resin;
A first step of bump-connecting at least one of the semiconductor chips face-down to the wiring pattern on the bottom surface in the concave portion of the wiring board; and erecting at least one passive chip component on the wiring board after the step is completed. In this state, only the electrode on one side is bonded to the wiring pattern on the bottom surface with a conductive adhesive, cured and cured.
And the step of filling the concave portion with a non-conductive encapsulating resin to a height such that the back surface of the bump-connected semiconductor chip and the electrode on the other side of the bonded passive chip component are exposed and cured. And a fourth step of filling the conductive encapsulating resin to a height to cover all of the back surface and the electrode exposed on the non-conductive encapsulating resin after the curing, and curing and curing the fourth step. And a method of manufacturing a hybrid integrated circuit device.