JPH0823004A - Manufacturing for semiconductor package - Google Patents

Abstract

PURPOSE:To form a sealing frame easily around a die area without causing a decrease in productivity or in cost in a manufacturing method for a semiconductor package. CONSTITUTION:In a die bonding apparatus, a die bonding resin R1 is transcribed on a die area (D) in a board 8 by a first stamp. A semiconductor chip 11 is mounted on the die bonding resin R1 that has been transcribed on the board 8. A resin R2 for forming a sealing frame is transcribed by a stamp 13 in a die bonding step so that a sealing frame 19 for controlling potting resin from extending outward is formed around the die area (D). Then, a resin hardening step, a wire bonding step, a resin sealing step are carried out to form a semiconductor package.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package manufacturing method.

[0002]

2. Description of the Related Art A semiconductor chip mounted on a semiconductor package is often resin-sealed by a potting method in order to protect it from moisture and dirt in the external environment.

Here, an example of a semiconductor package manufacturing process will be introduced. First, an electronic component mounting substrate having a wiring pattern or the like is prepared in advance. Next, a semiconductor chip is mounted on the die area on the substrate via a thermosetting resin or the like by a die bonding process. After that, the resin is cured by a resin curing step, and then the semiconductor chip side and the substrate side are connected by a wire bonding step.
Then, the semiconductor chip is sealed by supplying potting resin to the die area with a dispenser or the like.

However, the resin sealing by the potting method is inferior to other resin sealing methods in that the accuracy of forming the sealed portion is inferior. Therefore, a measure may be taken to form a so-called sealing frame around the die area on the substrate. Such a sealing frame plays a role of controlling the spread of the supplied potting resin. As a method of forming the sealing frame, for example, a method of pressure-bonding a frame-shaped member, a method of printing a sealing frame forming resin, and the like are known.

[0005]

However, when the sealing frame is provided on the substrate, the sealing frame forming process such as the above-mentioned pressure bonding and printing is required in addition to the existing semiconductor package manufacturing process. Become. Therefore, a dedicated facility or device for performing pressure bonding, printing, etc. is required, which naturally lowers the cost and productivity of the semiconductor package.

The present invention has been made to solve the above problems, and an object thereof is to easily form a sealing frame around a die area without deteriorating productivity and cost. It is to provide a method of manufacturing a semiconductor package that can achieve

[0007]

In order to solve the above-mentioned problems, in the invention described in claim 1, the die-bonding resin is transferred to the die area on the substrate by the stamp of the die-bonding apparatus, and the transfer is performed. A semiconductor package that performs a die bonding step of mounting a semiconductor chip on the resin for die bonding that has been performed, then performs a resin curing step and a wire bonding step, and further performs a resin sealing step of sealing the semiconductor chip with potting resin. In the method for manufacturing a semiconductor package, the gist is a method for manufacturing a semiconductor package, in which the resin for forming a sealing frame is transferred by a stamp of the apparatus when the resin for die bonding is transferred.

According to the second aspect of the invention, in the first aspect, the transfer is performed by a stamp having the transfer surface for the die area and the transfer surface for forming the sealing frame.

[0009]

According to the present invention, the stamp used in the die bonding step transfers the die bonding resin to the die area on the substrate and forms the sealing frame around the die area. The resin for printing is also transferred.

In particular, it is preferable that the die bonding resin and the sealing frame forming resin are individually transferred by dedicated stamps having transfer surfaces having different shapes. In this case, since a dedicated stamp is used for transferring the die bonding resin and the sealing frame forming resin, both resins are individually transferred.

When the resin for die bonding is an insulating epoxy resin, the resin is cured by heating after transferring at room temperature, and as a result, the semiconductor chip is surely bonded to the die area. Further, since it is an insulating epoxy resin, it is excellent in cost performance, insulation property and adhesiveness.

If the resin for forming the sealing frame is an insulating epoxy resin to which a powder of silicone resin is added,
By setting the conditions for heating and curing the resin transferred to the die area, the resin transferred to the periphery of the die area can be simultaneously cured. Further, an insulating epoxy resin to which a powder of a silicone resin is added can also be used, and is excellent in cost performance, insulating property, adhesive property and volatility.

According to the second aspect of the invention, the die bonding resin and the sealing frame forming resin are simultaneously transferred by one stamp.

[0014]

【Example】

[Embodiment 1] Hereinafter, an embodiment embodying the present invention will be described with reference to FIG.
~ It demonstrates in detail based on FIG.

In this embodiment, after the die bonding step (transfer of the die bonding resin R1 and sealing frame forming resin R2, mounting of the semiconductor chip 11), a resin curing step,
A wire bonding process and a resin sealing process are performed. Before describing each step, the configuration of the die bonding apparatus 1 used in the die bonding step will be described first.

As schematically shown in FIG. 7, the die bonding apparatus 1 includes a feeder section 2, a mounter head section 3, a stamp head section 4, a head driving means 5,
A chip supply unit 6, a resin supply unit 7, and a control computer (not shown) are provided.

The feeder unit 2 conveys the electronic component mounting substrate 8 in a direction perpendicular to the paper surface of FIG. The head driving means 5 includes a mounter head section 3 and a stamp head section 4. The mounter head unit 3 is horizontally moved between the chip supply unit 6 and the feeder unit 2 by a driving force from the head driving unit 5 and vertically moved by a predetermined amount. A vacuum suction nozzle 9 is provided at the lower end of the mounter head section 3. Semiconductor chips 11 are arranged in a chip tray 10 placed on the chip supply unit 6. The vacuum suction nozzle 9 is used for the chip tray 1
The semiconductor chips 11 in 0 are picked up one by one.

The stamp head unit 4 has a head driving means 5
With the driving force from, the resin supply unit 7 and the feeder unit 2 are moved horizontally and vertically by a predetermined amount. Dedicated stamps 12 and 13 having transfer surfaces 12a and 13a having different shapes are provided at the lower end of the stamp head unit 4. The vertical positions of the two stamps 12 and 13 are switched by a stamp switching unit (not shown). The resin tray 1 is provided on the resin supply unit 7.
4, 15 are mounted. These resin trays 14,
Each of 15 is filled with a die bonding resin R1 and a sealing frame forming resin R2 in a state of being stretched to a constant thickness.

The first stamp 12 is made of stainless steel and has a substantially square transfer surface 12a for transferring the die bonding resin R1 onto the die area D. A protrusion 12b is formed in the center of the transfer surface 12a as a means for surely attaching the resin in the resin tray 14.

The second stamp 13 is made of stainless steel and has a square and frame-shaped transfer surface 13a for transferring the sealing frame forming resin R2 around the die area D.
A recess 13b is formed in a region of the second stamp 13 that is inside the transfer surface 13a.

In this embodiment, an insulating epoxy resin (made by Nippon Able Stick Co., Ltd., trade name 975-2L) is used as the die bonding resin R1. Further, as the sealing frame forming resin R2, a resin obtained by adding powder of silicone resin to the insulating epoxy resin is used.

Next, a die bonding process using the die bonding apparatus 1 as described above will be described. FIG. 1 shows an electronic component mounting substrate 8 used in a die bonding process. A conductor pattern 16 is formed on the lower surface side of the substrate 8. A part of the conductor pattern 16 is exposed by the five through holes 17 provided immediately around the die area D. That is, in this substrate 8, the exposed portion is the bonding pad 18. Then, on the upper surface of the bonding pad 18, a thin gold plating (not shown) is applied in order to improve the wire bonding property.

First, the stamp switching means is operated to switch to the first stamp 12. Next, after moving the stamp head portion 4 to a position directly above the resin tray 14, the stamp head portion 4 is lowered. At this time, the die bonding resin R1 adheres to the transfer surface 12a of the first stamp 12. Next, after the stamp head unit 4 is lifted, the stamp head unit 4 is moved to a position directly above the die area D on the substrate 8. Next, the stamp head unit 4 is lowered. Then, as shown in FIG. 2, the die bonding resin R1 is transferred to the die area D by a thickness of about 50 .mu.m. Next, after raising the stamp head portion 4, the stamp head portion 4 is retracted to a position directly above the resin tray 15.

Next, the mount head portion 3 retracted at a position directly above the chip tray 10 is lowered, and the vacuum suction nozzle 9 picks up the semiconductor chip 11. Next, after raising the mount head portion 3, the mount head portion 3 is moved to a position directly above the die area D on the substrate 8. Next, the mount head unit 3 is lowered. Then, as shown in FIG. 3, the semiconductor chip 11 is mounted on the transferred die bonding resin R1. Next, after raising the mount head unit 3, the mount head unit 3 is again retracted to a position directly above the chip tray 10.

Next, the stamp switching means is operated to switch the first stamp 12 to the second stamp 13, and then the stamp head portion 4 is lowered. At this time, the second
Of the sealing frame forming resin R2 on the transfer surface 13a of the stamp 13 of
Adheres. Next, after raising the stamp head portion 4, the stamp head portion 4 is moved to the die area D on the substrate 8.
Move it to the position directly above. Next, the stamp head unit 4 is lowered. Then, the sealing frame forming resin R2 is transferred around the die area D. As a result, as shown in FIG. 4, the desired sealing frame 19 (about 100 in this embodiment) is obtained.
μm thick, about 500 μm wide) is formed. Next, after raising the stamp head portion 4, the stamp head portion 4 is retracted to a position directly above the resin tray 14.

By such a series of operations, the transfer of the die bonding resin R1, the mounting of the semiconductor chip 11 and the formation of the sealing frame 19 are completed once. The substrate 8
When there are a plurality of die areas D above, the above operation is repeated as many times as necessary. The above die bonding process is performed at room temperature. In addition, the series of operations are automatically and quickly performed with high accuracy based on a program stored in the control computer.

The substrate 8 that has undergone the die bonding process is then carried into a curing device for carrying out a resin curing process. The substrate 8 is kept in the curing device at a predetermined temperature for a predetermined time (150 ° C. to 180 ° C., 10 ° C. in this embodiment).
The heat treatment is performed for 10 minutes to 30 minutes. As a result, the die bonding resin R1 and the sealing frame forming resin R2 are both cured.

The substrate 8 that has undergone the resin curing step is then conveyed to a wire bonder for carrying out the wire bonding step. In the wire bonder, an electrode (not shown) on the semiconductor chip 11 side and the bonding pad 18 on the substrate 8 side are electrically connected. In this embodiment, as shown in FIG. 5, the electrode and the bonding pad 18 are connected to each other via a thin gold wire 20.

The substrate 8 that has undergone the wire bonding process is
Then, it is transported to a potting device for performing a resin sealing step by the potting method. The potting unit at the front stage of the potting device is provided with a dispenser that is movable in a horizontal direction and a vertical direction by a predetermined amount. The dispenser discharges a predetermined amount of potting resin R3 from the nozzle onto the die area D of the substrate 8.

The potting resin R3 supplied onto the die area D usually behaves as if it spreads outward in the die area D. However, since the sealing frame 19 exists around the die area D, the spread of the potting resin R3 is restricted. At this time, the outer shape of the portion sealed with the potting resin R3 is substantially the same as the outer shape of the sealing frame 19 (that is, substantially square in this embodiment).

After that, the uncured potting resin R3 is heated and cured at a predetermined temperature by a curing device in the subsequent stage of the potting device. As a result, as shown in FIG. 6, the semiconductor chip 11 is removed by the potting resin R3.
A semiconductor package 21 is formed in which the whole is sealed. In this embodiment, as the potting resin R3,
Insulating epoxy resin is used.

Now, the semiconductor package 2 of this embodiment
The function and effect of the manufacturing method 1 will be described. According to the manufacturing method of this embodiment, the die bonding resin R1 is transferred to the die area D on the substrate 8 by the first stamp 12 of the stamps 12 and 13 of the die bonding apparatus 1. In addition, the die bonding apparatus 1
By the second stamp 13 provided in, the sealing frame forming resin R2 is transferred around the die area D. That is, the sealing frame forming resin R2 is transferred by the same die bonding apparatus 1 in the die bonding step of transferring the die bonding resin R1. Therefore, unlike the conventional case, there is no need to provide a sealing frame forming step different from the existing semiconductor package manufacturing process, such as pressure bonding or printing of the sealing frame. Therefore,
There is no need for dedicated equipment or devices for performing crimping or printing. Therefore, according to this manufacturing method, the sealing frame 19 can be easily formed around the die area D without inviting the cost and productivity of the semiconductor package 21.

Particularly in this embodiment, dedicated stamps 12, 13 such as the first stamp 12 and the second stamp 13 are used to transfer the die bonding resin R1 and the sealing frame forming resin R2. I'm using it. Therefore, the die bonding resin R1 and the sealing frame forming resin R2 are individually transferred. Therefore, there is an advantage that the thickness of the resin to be transferred, the combination of the types of the resin, and the like can be arbitrarily changed.

In this embodiment, an insulative epoxy resin is selected as the die bonding resin R1 and an insulative epoxy resin to which a silicone resin powder is added is selected as the sealing frame forming resin R2. As described above, the material having excellent cost performance, insulation property, and adhesiveness is used as the constituent material, which is convenient for obtaining the highly reliable semiconductor package 21 at low cost. In addition, since both are the same insulating epoxy resin, the resin R for die bonding
The sealing frame forming resin R2 can be cured at the same time by setting the conditions for curing 1 by heat. Therefore,
It has the advantage of simplifying the process.

Further, in the case of the manufacturing method as described above, basically the sealing frame 1 depends on the accuracy of the die bonding apparatus 1.
The formation accuracy of 9 is determined. Therefore, according to the die-bonding apparatus 1 controlled by a computer, it is possible to obtain the sealing frame 19 with extremely excellent forming accuracy. Therefore, it is possible to reliably improve the accuracy of forming the sealing portion with the potting resin R3. [Embodiment 2] Next, a manufacturing method of Embodiment 2 will be described with reference to FIGS.
It will be described based on.

Also in this embodiment, basically, as in the first embodiment, after the die bonding process by the die bonding apparatus 1, the resin hardening process, the wire bonding process,
A resin sealing process is performed. However, here, a stamp 25 having a slightly different structure from the stamps 12 and 13 of the die bonding apparatus 1 of the first embodiment is used.

The stamp 25 is made of stainless steel,
The transfer surface 25a for the die area D and the transfer surface 25b for forming the sealing frame are provided in substantially the same plane. Die area D
The transfer surface 25a for printing has a substantially square shape and is located at the center of the lower surface of the stamp 25. Transfer surface 25 for forming a sealing frame
b has a square shape and a frame shape, and is located on the outer peripheral portion of the lower surface of the stamp 25. A protrusion 25c is formed at the center of the transfer surface 25a as a means for surely adhering the resin in the resin tray 14. A recess 25d is formed in a region between the transfer surface 25a and the transfer surface 25b. The stamp 25 thus configured is provided at the lower end of the stamp head unit 4.

In this embodiment, a common resin (insulating epoxy resin selected as the die bonding resin in Example 1) R4 is used as the die bonding resin and the sealing frame forming resin. Therefore, only the resin tray 14 filled with the resin R4 is placed on the resin supply section 7. Note that, in the die bonding apparatus 1 shown in FIG. 10, the parts having the same member numbers as in the first embodiment are the same in basic configuration, and therefore detailed description thereof will be omitted here.

Next, a die bonding process using the die bonding apparatus 1 will be described. First, the stamp head unit 4 is moved to a position directly above the resin tray 14, and then the stamp head unit 4 is lowered. Then, the insulating epoxy resin R4 adheres to both transfer surfaces 25a and 25b of the stamp 25. Next, after the stamp head unit 4 is lifted, the stamp head unit 4 is moved to a position directly above the die area D on the substrate 8. Next, the stamp head unit 4 is lowered.

Then, as shown in FIG. 8, at the same time when the insulating epoxy resin R4 is transferred to the die area D,
The insulating epoxy resin R4 is also transferred around the die area D. That is, at this time, the sealing frame 19 is formed. In this embodiment, the thickness of the insulating epoxy resin R4 in and around the die area D is about 5
It becomes 0 μm. Next, after raising the stamp head portion 4, the stamp head portion 4 is retracted to a position directly above the resin tray 14.

Next, the mount head portion 3 retracted at a position directly above the chip tray 10 is lowered, and the semiconductor chip 11 is picked up by the vacuum suction nozzle 9. Next, after raising the mount head portion 3, the mount head portion 3 is moved to a position directly above the die area D on the substrate 8. Next, the mount head unit 3 is lowered. Then, the semiconductor chip 11 is mounted on the insulating epoxy resin R4 transferred to the die area D. Next, after raising the mount head unit 3, the mount head unit 3 is again retracted to a position directly above the chip tray 10.

By such a series of operations, transfer of the insulating epoxy resin R4 (formation of the sealing frame 19) and mounting of the semiconductor chip 11 are completed once. When there are a plurality of die areas D on the substrate 8, the above operation is repeated as many times as necessary. The above die bonding process is performed at room temperature. In addition, the series of operations are automatically and quickly performed with high accuracy based on a program stored in the control computer.

The substrate 8 that has undergone the die bonding process becomes the semiconductor package 21 as shown in FIG. 6 through the resin curing process, the wire bonding process and the resin sealing process according to the first embodiment.

Even with the manufacturing method of the semiconductor package 21 as described above, basically the same operational effects as those of the manufacturing method of the first embodiment can be obtained. In particular, this manufacturing method is characterized in that the die bonding resin and the sealing frame forming resin are simultaneously transferred by the one stamp 25. Therefore, as compared with the first embodiment, there is an advantage that the operation of the die bonding apparatus 1 can be reduced. In other words, the sealing frame 19 can be formed in the same required time as when the sealing frame 19 is not formed. Therefore, even if this manufacturing method is carried out, the productivity of the semiconductor package 21 is not impaired.

The present invention is not limited to the above embodiment, but can be modified as follows. (1) As the die bonding resin R1 and the sealing frame forming resin R2, for example, other than the insulating epoxy resin,
Other thermosetting resins such as polyimide resins may be used.

(2) In the stamp 25 of the second embodiment, the transfer surfaces 25a and 25b do not have to have the same height. For example, when it is desired to obtain the sealing frame 19 higher than that in the second embodiment, the transfer surface 25b may be lower than the transfer surface 25a. Of course, the sealing frame 19 lower than that in the second embodiment
If you want to get

(3) In the stamp 25 of the second embodiment, the relative heights of the two transfer surfaces 25a and 25b may be changeable. With such a configuration, each transfer thickness can be adjusted. The stamp 25 can also be used for the die area D that does not require the formation of the sealing frame 19.

(4) Stamp 2 of another example shown in FIG.
As shown in FIG. 6, the transfer surface 26b on the outer peripheral side may be widened, and the protrusion 26e may be provided at the central portion in the longitudinal direction over the entire circumference. When such a protrusion 26e is formed, the resin in the resin tray 14 is surely attached to the transfer surface 26b, and as a result, the accuracy of forming the sealing frame 19 is improved.

(5) When the die area D on the substrate 8 has a die pad, for example, a conductive resin may be used as the die bonding resin R1. (6) In the first embodiment, the sealing frame 19 may be transferred first, and then the die bonding resin R1 may be transferred and the semiconductor chip 11 may be mounted.

(7) Stamps 12, 13, 25, 26
As a forming material of a metal material other than stainless steel (for example,
(Iron, copper, aluminum, etc.) may be selected. Further, not only a metal material but also a rubber material, a ceramic material or the like may be selected. Right, a metal stamp 1
2, 13, ... has an advantage that the forming accuracy of the sealing frame 19 is higher than that of the rubber material. Further, it has the advantages of being cheaper and having better workability than ceramic materials.

Here, in addition to the technical ideas described in the claims, the technical ideas grasped by the above-described embodiments and other examples will be listed below together with their effects. (1) A semiconductor package manufactured by the manufacturing method according to claim 1. With such a semiconductor package, the precision of forming the sealing portion is excellent, and the cost and reliability are also excellent.

(2) Conveying means for conveying the electronic component mounting board, a chip supplying section and a resin supplying section arranged in the vicinity of the conveying means, and a semiconductor chip for mounting a semiconductor chip on the die area on the board. Mounter head part, stamp head part for transferring a predetermined resin to the die area and its periphery, drive means for moving the mounter head part and the stamp head part to an arbitrary position, and transfer of the die bonding resin A die bonding apparatus including a first stamp having a transfer surface, a second stamp having a transfer surface for transferring the sealing frame forming resin, and a stamp switching unit for switching the upper and lower positions of both stamps. With this apparatus, the sealing frame can be formed in a normal die bonding process.

(3) A stamp for carrying out the method for manufacturing a semiconductor package according to claim 1, wherein the stamp has a transfer surface for a die area and a transfer surface for forming a sealing frame in substantially the same plane. Made stamp. With this stamp, the die bonding resin and the sealing frame forming resin are common, and the resin can be transferred at the same time.

(4) A stamp having the technical concept (3), which has a protrusion on the transfer surface for forming the sealing frame.
With this configuration, the accuracy of forming the sealing frame can be further improved. (5) When the die bonding process is performed by transferring the die bonding resin to the die area on the substrate by the stamp of the die bonding apparatus and mounting the semiconductor chip on the transferred die bonding resin. By transferring the frame forming resin,
A method for forming a sealing frame for a semiconductor package substrate, which comprises forming a sealing frame around the die area for restricting the spread of potting resin. With this forming method, the sealing frame can be easily formed around the die area without inviting deterioration in productivity and cost performance.

The technical terms used in this specification are defined as follows. "Die area: An area on a substrate to which a semiconductor chip is to be adhered by an insulating or conductive die bonding resin."

[0056]

As described above in detail, according to the inventions of claims 1 and 2, since the sealing frame is formed in the existing semiconductor package manufacturing process, productivity and cost are deteriorated. Without this, the sealing frame can be easily formed around the die area.

[Brief description of drawings]

FIG. 1A is a partial cross-sectional view showing an electronic component mounting substrate in a semiconductor package manufacturing method according to a first embodiment,
(B) is a partial plan view of the same.

2A is a partial cross-sectional view showing a state in which a die bonding resin is transferred to a die area in the same manufacturing method, and FIG. 2B is a partial plan view thereof.

FIG. 3A is a partial cross-sectional view showing a state in which a semiconductor chip is mounted on a die area in the same manufacturing method, and FIG.
Is a partial plan view thereof.

4A is a partial cross-sectional view showing a state in which a resin for forming a sealing frame is transferred around the die area in the same manufacturing method, and FIG. 4B is a partial plan view thereof.

5A is a partial cross-sectional view showing a state where wire bonding is performed in the manufacturing method, and FIG. 5B is a partial plan view thereof.

FIG. 6A is a partial cross-sectional view showing a state in which a semiconductor chip is sealed with potting resin in the manufacturing method, and FIG. 6B is a partial plan view thereof.

FIG. 7 is a schematic view showing a die bonding apparatus used in the manufacturing method.

8A is a partial cross-sectional view showing a state in which a die bonding resin and a sealing frame forming resin are transferred in the manufacturing method of Example 2, and FIG. 8B is a partial plan view thereof.

9A is a partial cross-sectional view showing a state in which a die bonding resin and a sealing frame forming resin are transferred in a manufacturing method of another example, and FIG. 9B is a partial plan view thereof.

FIG. 10 is a schematic view showing a die bonding apparatus used in the manufacturing method of Example 2.

[Explanation of reference numerals] 1 ... Die bonding device, 8 ... (Electronic component mounting) substrate, 11 ... Semiconductor chip, 12, 13, 25, 26 ... Stamp, 12a, 13a, 25a, 25b, 26a, 2
6b ... Transfer surface, 19 ... Sealing frame, 21 ... Semiconductor package, D ... Die area, R1 ... Die bonding resin,
R2 ... Resin for forming sealing frame, R3 ... Potting resin, R
4… Insulating epoxy resin.

Claims (2)

[Claims] 1. A die-bonding step of transferring a resin for die-bonding to a die area on a substrate by a stamp of a die-bonding device and mounting a semiconductor chip on the transferred resin for die-bonding. Curing process and wire bonding process
Furthermore, in the method of manufacturing a semiconductor package, which performs a resin sealing step of sealing the semiconductor chip with a potting resin, when the die bonding step is performed, the sealing frame forming resin is transferred by the stamp, thereby forming A method of manufacturing a semiconductor package, wherein a sealing frame for restricting the spread of the potting resin is formed around the periphery of the semiconductor package. 2. A common resin is used as the die bonding resin and the sealing frame forming resin, and the common resin is used as a die area transfer surface and a sealing frame forming transfer surface. The method of manufacturing a semiconductor package according to claim 1, wherein the transfer is performed by a stamp provided in substantially the same plane.