JPH08228138A - Semiconductor integrated circuit - Google Patents

Abstract

PURPOSE: To provide the semiconductor integrated circuit for high frequency for which power consumption and an occupied area are reduced, switchable power is enlarged, output generation distortion is reduced and peripheral circuits are simplified. CONSTITUTION: First and second signal terminals 6 and 7 are respectively connected to the drain and source of a field effect transistor(FET) and a first control terminal 3 is connected to its gate. Then, a first resistor member 2a is interposed between the gate and the first control terminal, and capacitors 5a and 5b are respectively interposed between the drain/source and the first/ second signal terminal. Besides, a second control terminal 4 is connected through a second resistor member 2b to one of drain and source at least. Then, a high frequency signal inputted to the first signal terminal 6 is passed through the FET and outputted from the second signal terminal 7 and the transmission amount of high frequency signal is controlled by a voltage signal for control inputted between the first and second control terminals 3 and 4.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a mobile communication device,
In particular, the present invention relates to a high frequency semiconductor integrated circuit used in a mobile phone or the like.

[0002]

2. Description of the Related Art In recent years, with the development of the field of mobile communication, a small size and low power consumption high frequency semiconductor switch and a high frequency semiconductor variable attenuator have been used for switching transmission / reception of antennas of mobile phones and for controlling power amplifier input level. Is desired. As a device used for such a switch and an attenuator, a basic circuit in which a field effect transistor (FET) as shown in FIG. 8 is arranged is used.

In FIG. 8, 1 is a normally-on field effect transistor formed on a part of a GaAs substrate and having a gate and a source / drain, 3 is a control terminal, 6 is a first signal terminal, and 7 is a second signal. It is a terminal. That is, by applying the control voltage signal to the gate of the field effect transistor 1 via the control terminal 3 and changing the value of the control voltage signal, the high frequency between the first signal terminal 6 and the second signal terminal 7 is increased. It is designed to control the amount of signal transmission.

In FIG. 9, two basic circuits shown in FIG. 8 are arranged, the first signal terminal of each basic circuit is connected to the common input terminal 10, and the second signal terminal 7 of one basic circuit is connected. Is used as an output terminal, and the second signal terminal 7 of the other basic circuit is connected to the ground terminal. In a circuit like this,
By inputting a complementary control voltage signal to each control terminal 3 of each basic circuit, the amount of signal transmission in each basic circuit is complementarily controlled. Therefore, the high-frequency signal when the field-effect transistor of the basic circuit on the side transmitting the high-frequency signal to the output terminal is turned off is released to the ground terminal side, so that particularly high isolation can be exhibited.

[0005]

However, when the above-mentioned conventional basic circuits are combined to form a circuit as shown in FIG. 9, there are the following problems.

That is, as described with reference to FIG.
A high-frequency control circuit such as a switch is configured by using the basic circuit shown in FIG. 8 as a unit and inserting another basic circuit between the input and output of this basic circuit, between the input and ground, or between the output and ground. Requires two control terminals for inputting complementary control voltage signals. For example, the circuit shown in FIG. 9 requires two control circuits for supplying complementary control voltage signals to each control terminal 3 of each basic circuit. Therefore, not only two control terminals are always required, but also the peripheral circuit for driving this high frequency control circuit becomes complicated. Also, although the explanation is omitted,
Even when the unit circuits shown in FIG. 8 are combined to form a bridge T-type attenuator, two control systems for inputting two complementary control signals are required, which causes the same problem.

Further, as an incidental problem, when the power of the input high frequency signal is large, there is a risk that the linear characteristics between the input and the output may be broken and the distortion generated in the output may be increased. Therefore, when a circuit obtained by combining the basic circuit shown in FIG. 8 and the basic circuit shown in FIG. 9 is used as a switch or an attenuator, usable power is limited.

The present invention has been made in view of the above problems, and a first object of the present invention is to improve the structure of a basic circuit required for a switch and an attenuator to improve the structure of a peripheral circuit such as a drive circuit. An object of the present invention is to provide a semiconductor integrated circuit for high frequency control, whose structure can be simplified.

A second object is to reduce the distortion between the input and the output in the high frequency controlling semiconductor integrated circuit having the simplified structure as described above.

[0010]

[Means for Solving the Problems] The means for achieving the above first object of the present invention is to provide a first signal terminal and a second signal terminal in a basic circuit, and a source / drain of a field effect transistor. A means for blocking transmission of a DC signal between the two is taken, and the field effect transistor is controlled by the voltage between the gate and the source / drain.

The means taken by the present invention to achieve the above second object is to configure the gate of the field effect transistor in the basic circuit by a plurality of gates.

Specifically, a first semiconductor integrated circuit according to the present invention is, as described in claim 1, a semiconductor integrated circuit having a basic circuit for transmitting a high frequency signal. A field effect transistor having a gate, a source and a drain; first and second signal terminals for inputting and outputting a high frequency signal between the field effect transistor and the outside of the field effect transistor; A DC component cutoff member, which is interposed in the wiring between the source / drain of the effect transistor and each of the signal terminals and has at least a capacitor component whose impedance in the frequency band used is lower than the line impedance, and is connected to the gate. And a first control terminal that is provided between the gate and the first control terminal, and the impedance is greater than the line impedance. A first blocking member for blocking the input of the high-frequency signal to the first control terminal has had resistance characteristics,
A second control terminal connected to a wiring between at least one of the source / drain of the field effect transistor and the DC component blocking member via a branch wiring, and an impedance provided in the branch wiring and having a line impedance. And a second blocking member having a higher resistance characteristic for blocking the input of the high frequency signal to the second control terminal. The transmission amount of the high frequency signal between the first signal terminal and the second signal terminal of the basic circuit is controlled by the control voltage signal between the first control terminal and the second control terminal. Is.

With this configuration, when a high-frequency signal is input to the first signal or the second signal terminal, the gate-source / source of the field effect transistor interposed between the first signal terminal and the second signal terminal. The transmission amount of the high frequency signal is controlled by the control voltage signal applied between the drains. In that case, since the first and second control terminals are individually connected to the gate and the source / drain respectively, when a plurality of these basic circuits are combined, the first control terminal of one basic circuit and the other The second control terminal of the basic circuit can be commonly connected. Since a direct current component blocking member including a capacitor component is interposed between the source / drain of the field effect transistor and the first and second signal terminals, even if each basic circuit is combined, The potentials are independent and do not affect each other. Therefore, by supplying a common control voltage signal to the first control terminal of one basic circuit and the second control terminal of another basic circuit,
It is possible to control the operation of each basic circuit. Also,
Since each blocking member blocks the inflow of a high-frequency signal from each signal terminal or each part of the field-effect transistor to each control terminal, the high-frequency signal passes through a path other than the path between the first signal terminal and the second signal terminal. Never flow into. That is, by combining these basic circuits, it is possible to configure a semiconductor integrated circuit having a simplified control system with a small number of terminals.

According to a second aspect of the present invention, in the first semiconductor integrated circuit, the gates and the first control terminals are arranged in the same number, and the gates and the first control terminals are respectively arranged between the gates and the first control terminals. The first blocking member can be provided.

As described above, by using the field effect transistor having a plurality of gates, the drain and source of the plurality of field effect transistors are connected in series, and the drain and source of each field effect transistor are substantially connected. The high-frequency voltage applied between the sources is divided by the number of gates and becomes smaller, so the switchable power improves.
The distortion generated in the output is reduced.

In a second semiconductor integrated circuit according to the present invention, as described in claim 3, a plurality of the basic circuits are provided, and a first control terminal of a part of the basic circuits is provided. And a voltage supplied from the first voltage supply terminal connected to the second control terminal of another basic circuit among the plurality of basic circuits and connected to the first voltage supply terminal for supplying a predetermined voltage. And a second voltage supply terminal for supplying a voltage having a potential difference of 1. In the above-mentioned part of the basic circuit, the first signal terminal-second
While the transmission amount of the high frequency signal between the signal terminals is controlled, in the other basic circuit described above, the signal to the second control terminal causes the first
The transmission amount of the high frequency signal between the signal terminal and the second signal terminal is controlled.

With this configuration, in the plurality of basic circuits, the control voltage signal that changes between the first voltage and the second voltage is input to the first control terminal or the second control terminal of each basic circuit. , The amount of high-frequency signal transmission of each basic circuit is controlled in an associated manner. Therefore, even if various basic circuits are combined in various ways, the control system and the number of terminals can be simplified.

According to a fourth aspect of the present invention, in the second semiconductor integrated circuit, two basic circuits are arranged,
An input terminal commonly connected to each first signal terminal of each of the basic circuits, and a second terminal of one of the basic circuits.
An output terminal connected to the signal terminal, a ground terminal connected to the second signal terminal of the other basic circuit of the above basic circuits, and a first control terminal of one of the basic circuits of the above basic circuits. And a third control terminal commonly connected to the second control terminal of the other basic circuit of the above basic circuits and for inputting a control voltage signal, and each of the basic circuits functions as a switch. A unit circuit can be configured.

With this configuration, the high-frequency signal transmitted to the output terminal via one of the basic circuits and the other by the control voltage signal supplied via the single third control terminal. The amount of transmission with the high-frequency signal escaped to the ground terminal via the basic circuit of is controlled complementarily. Therefore, by combining the first and second basic circuits, a unit circuit having a simple control system and high isolation between input and output is configured.

According to a fifth aspect of the present invention, in the second semiconductor integrated circuit, two basic circuits are provided.
An input terminal commonly connected to each first signal terminal of each of the basic circuits, and a second terminal of one of the basic circuits.
An output terminal connected to the signal terminal, a ground terminal connected to the second signal terminal of the other basic circuit of the above basic circuits, and a first control terminal of one of the basic circuits of the above basic circuits. And a third control terminal commonly connected to the second control terminal of the other basic circuit of the above basic circuits for inputting a control voltage signal, a source of one of the basic circuits, and Two resistance members having the same resistance value are respectively provided between the drain and the first signal terminal of the other basic circuit of the basic circuits, and the basic circuits function as an attenuator. A unit circuit can be configured.

With this configuration, the unit circuit serves as a bridge T-type attenuator circuit, the matching condition between each input and output is maintained well, and the attenuation amount between the input and output changes by a single control voltage signal. Therefore, the control system is simplified and an attenuator having an excellent function of attenuating the high frequency signal is configured.

According to a sixth aspect of the present invention, in the second semiconductor integrated circuit, two basic circuits are arranged,
An input terminal commonly connected to each first signal terminal of each basic circuit, first and second output terminals individually connected to each second signal terminal of each basic circuit, and each basic circuit A first control terminal of any one of the basic circuits and a second control terminal of the other basic circuit of the above basic circuits are commonly connected, and a third control terminal for inputting a control voltage signal is further provided. By providing each of the basic circuits, it is possible to configure a unit circuit having a signal distribution function of outputting a high frequency signal input through a common input terminal through the first and second output terminals.

According to a seventh aspect of the present invention, in the second semiconductor integrated circuit, the two basic circuits are provided and used as the first and second basic circuits. The first and second terminals individually connected to the first signal terminals of the two basic circuits
A second input terminal; an output terminal commonly connected to each second signal terminal of each of the basic circuits; a first control terminal of one of the basic circuits of the basic circuits; A third control terminal commonly connected to the second control terminal of the other basic circuit and for inputting a control voltage signal is further provided, and by each of the basic circuits, via the first and second input terminals. It is possible to configure a unit circuit having a signal mixing function of outputting the input high frequency signal via the common output terminal.

Further, as described in claim 8, in the second semiconductor integrated circuit, the two unit circuits are first and second unit circuits, and the first and second unit circuits of the respective unit circuits are the same. A third output terminal commonly connected to one of the output terminals, and a third output terminal commonly connected to the other output terminal of the first and second output terminals of each unit circuit. 4 output terminals and each third of the above unit circuits
A fourth control terminal commonly connected to the control terminal is further provided, and a high-frequency signal input from each input terminal of each unit circuit is changed to a third control signal of each unit circuit by a voltage signal input to the fourth control terminal. , The fourth output terminal can be alternately switched, and the four-way selector switch can be composed of the first and second unit circuits.

As described in claim 9, in the second semiconductor integrated circuit, at least one of the basic circuits is provided with a third basic circuit having the same configuration as the basic circuit. Then, the first signal terminal of the third basic circuit is connected to the input terminal of the unit circuit to which the at least one basic circuit belongs, and the second signal of the third basic circuit is connected.
When the signal terminal is connected to the ground terminal and the first control terminal of the basic circuit provided with the third basic circuit is connected to the third control terminal, the second control terminal of the third basic circuit is The third basic circuit is attached while being connected to the third control terminal and connecting the first control terminal of the third basic circuit to one of the first voltage supply terminal and the second voltage supply terminal. When the second control terminal of the basic circuit is connected to the third control terminal, the first control terminal of the third basic circuit is connected to the third control terminal and the second control terminal of the third basic circuit is connected. It may be configured to connect to either one of the first voltage supply terminal and the second voltage supply terminal.

According to the structures of claims 6 to 9, distribution, mixing, switching, etc. of high-frequency signals among the basic circuits are performed. Therefore, a distributor or the like having a simplified control system is configured.

According to a tenth aspect of the present invention, in each of the semiconductor integrated circuits, the same number of gates and the same number of first control terminals are arranged in at least one of the basic circuits. The first blocking member may be provided between each gate and the first control terminal.

With this configuration, the same operation as that of the second aspect of the invention can be obtained.

[0029]

Embodiments of the present invention will be described below.
This will be described with reference to the drawings.

(First Embodiment) First, a first embodiment will be described with reference to the drawings. FIG. 1 is an electric circuit diagram showing a configuration of a basic circuit 8 in a semiconductor integrated circuit according to the first embodiment of the present invention. The basic circuit 8 includes a field effect transistor 1 having a gate, a source and a drain, first and second resistance members 2a and 2b as first and second blocking members for blocking transmission of high frequency signals, and a first , The second control terminals 3 and 4, the first and second capacitors 5a and 5b functioning as a DC component blocking member, and the first and second signal terminals 6 and 7 in combination. The field effect transistor 1 has, for example, a gate length of 1 μm and a gate width of 1
mm, and a normally-on type with a pinch-off voltage of -2V. The gate of the field effect transistor 1 is connected to the first control terminal 3 via the first resistance member 2a. The source is connected to the second control terminal 4 via the second resistance member 2b. These resistance members 2a, 2
The resistance value of b is sufficiently larger than the line impedance, and for example, a resistance value of 2 KΩ is selected. The drain of the field effect transistor 1 is connected to the first signal terminal 6 via the first capacitor 5a, and the source is connected to the second signal terminal 7 via the second capacitor 5b. Each capacitor 5
Each of a and 5b is selected to be, for example, 50 pF so that the transmission loss in several hundred MHz to several GHz is sufficiently small. In the capacitors 5a and 5b, an insulating film made of BST (barium strontium titanate, dielectric constant: 200 to 300) which is a high dielectric material is deposited on a common GaAs substrate together with an FET, a resistance member and the like. It is formed by patterning this. If the thickness of the BST film is about 200 nm, the capacitors 5a and 5b
Has a capacitance per unit area of 100 pF / 100 μm ² , and the basic circuit 8 shown in FIG. 1 has a Ga of about 0.5 mm ^2.
Can be stored on the As substrate. That is, the area occupied by the basic circuit 8 can be small.

Next, the operation of the semiconductor integrated circuit of this embodiment will be described. The drain-source resistance of the field-effect transistor 1 changes depending on the voltage applied to the gate that is negative with respect to the source. Therefore, by applying the control voltage signal to the second control terminal 4 so that the first control terminal 3 becomes negative, the first signal terminal 6 and the second
It is possible to control the transmission amount of the high frequency signal between the signal terminals 7. The drain and source of the field effect transistor 1 are composed of the first and second signal terminals 6 and 7 and the capacitors 5a and 5a.
It is separated from DC by b. Therefore, when a plurality of circuits of the present embodiment are combined to form a high frequency control circuit, the field effect transistor of each basic circuit is affected by the control voltage signal applied to another basic circuit. It is possible to independently apply the control voltage signal.

In the basic circuit shown in the first embodiment and each of the following embodiments, the field effect transistor in the basic circuit may be a normally-off type.
In that case, a control voltage signal in which the potential of the first control terminal 3 connected to the gate is higher than the potential of the second control terminal 4 may be applied.

Further, in the first embodiment, the first and second resistance members 2a and 2b are provided as the first and second blocking members for blocking the transmission of the high frequency signal, but they are used as the blocking members. The element that can do this is not limited to such a resistance member. Therefore, a member having resistance characteristics such as a diode can be used in place of the resistance member in each basic circuit shown in the first embodiment and each of the following embodiments.

Further, in the first embodiment, the first and second capacitors 5a and 5b are provided as the DC component blocking member, but the member that can be used as the DC component blocking member is not limited to the capacitor. Absent. PI for example
Since the N diode includes a capacitor component, the DC component can be blocked even if the N diode is arranged instead of the capacitors 5a and 5b, and the same effect as that of the first embodiment can be exhibited. .

(Second Embodiment) Next, a second embodiment of the present invention will be described. FIG. 2 is an electric circuit diagram showing the configuration of the basic circuit in the semiconductor integrated circuit according to the second embodiment. In this embodiment, as compared with the configuration of the first embodiment, the field effect transistor 1 is provided with three gate electrodes, and the first resistance member 2 a is provided between each gate electrode and the first control terminal 3. The only difference is that is installed. Other configurations are similar to those of the first embodiment. These three first resistance member 2a and second resistance member 2b
The resistance value of is sufficiently larger than the line impedance as in the first embodiment, and for example, a resistance value of 2 KΩ is selected. Each of the capacitors 5a and 5b has a capacitance of, for example, 50 pF so that the transmission loss at several hundred MHz to several GHz is sufficiently small.
Are selected.

Next, the operation of the semiconductor integrated circuit of this embodiment will be described. The basic operation is the same as that of the first embodiment, and the negative potential difference of the first control terminal 3 with respect to the second control terminal 4 is independent of the DC potentials of the first signal terminal 6 and the second signal terminal 7. The amount of transmission of the high frequency signal can be controlled by.

In this embodiment, as the field effect transistor 1, one having three gate electrodes arranged between the drain and the source is used. This is equivalent to connecting the drains and sources of three field effect transistors in series. Therefore, the high frequency voltage applied between the drain and the source is substantially the number of gates (three in this embodiment).
It is divided into one part. When the voltage between the drain and the source is large, the non-linearity of the resistance between the drain and the source increases, but by using such a field effect transistor having a plurality of gates, the distortion generated in the output is reduced. In addition, each gate is connected to the first control terminal 3 via the first resistance member 2a. Therefore, the voltage of each gate changes following the high-frequency signal input to the signal terminal, the fluctuation of the potential difference between the gate and the source is suppressed, and the occurrence of distortion is further reduced.

In the third, sixth and seventh embodiments which will be described later, a plurality of gates of the field effect transistor in each basic circuit may be provided. However, it is not necessary that the gates in all the basic circuits have the same configuration, and the number of gates may be different in each basic circuit.

(Third Embodiment) Next, a third embodiment will be described. FIG. 3 is an electric circuit diagram showing the configuration of the unit circuit 20 in the semiconductor integrated circuit according to the third embodiment. The unit circuit 20 of this embodiment has the same configuration as the basic circuit 8 of the first embodiment.
It is configured by combining two second basic circuits 8 and 9. The first signal terminals 6 of the first and second basic circuits 8 and 9 are connected to the common input terminal 10. Further, each second signal terminal 7 of the first and second basic circuits 8 and 9 is individually connected to the first and second output terminals 11a and 11b. Further, the first control terminal 3 of the first basic circuit 8 and the second control terminal 4 of the second basic circuit 9 are connected to the common third control terminal 12. The first control terminal 3 of the second basic circuit is connected to the ground terminal, and the second control terminal 4 of the first basic circuit is connected to the power supply terminal 13.

Next, the operation of the semiconductor integrated circuit in this embodiment will be described. The potential of the power supply terminal 13 is Vdd,
The potential of the third control terminal 12 is Vc, and the gate-source voltage of the field effect transistor of the first basic circuit 8 is Vgs.
1 and the gate-source voltage of the field effect transistor of the second basic circuit 9 is Vgs2, the following relationship 2 Vgs1 = -Vc Vgs2 = Vc-Vdd is obtained. Therefore, the following formula | Vgs1 | + | Vgs2 | = Vdd is obtained, and complementary voltage control signals are applied to the field effect transistors 1 of the two basic circuits 8 and 9.

That is, in the circuit according to the present embodiment, the high frequency signal applied to the input terminal 10 is output to the two outputs of the basic circuits 8 and 9 by a single control input input through the third control terminal 12. It can be distributed to the terminals 11a and 11b. This is possible because the first signal inputs of the two basic circuits are connected in terms of high frequency, but are separated in terms of direct current by a capacitor. With such a configuration, the configuration of the peripheral circuit necessary for inputting the control voltage signal is simplified. The power supply terminal and the ground terminal may be voltage supply terminals that respectively supply two voltages having a predetermined potential difference.

(Fourth Embodiment) Next, a fourth embodiment will be described. FIG. 4 is an electric circuit diagram showing the configuration of the unit circuit 20 in the semiconductor integrated circuit according to the fourth embodiment. The unit circuit 20 of the semiconductor integrated circuit according to the present embodiment is a combination of the first and second basic circuits 8 and 9 having the same configuration as the basic circuit 8 according to the second embodiment, and is provided between the input terminal 10 and the output terminal 11. High-frequency signal transmission for the third control terminal 1
It is a switch that is turned on / off only by the control voltage signal to 2.

As shown in FIG. 4, the first of the second basic circuits 9
The control terminal 3 and the second signal terminal 7 are connected to the ground terminal, the first signal terminal 6 of the second basic circuit 9 is connected to the input terminal 10 common to the first signal terminal 6 of the basic circuit 8, and Two
The second control terminal 4 of the basic circuit 9 is connected to the third control terminal 12 which is common to the first control terminal 3 of the basic circuit 8. The power supply terminal 13 is connected to the second control terminal 4 of the first basic circuit 8.
A predetermined voltage is supplied via. However, in the present embodiment, the first control terminal 3 of the second basic circuit 9 is connected to the ground terminal, but the first control terminal 3 does not necessarily have to be connected to the ground terminal, and the first voltage supply It may be connected to another voltage supply terminal that supplies a voltage having a predetermined potential difference from the voltage supplied from the power supply terminal 13, which is a terminal. That is, the configuration of the unit circuit 20 shown in FIG.
This is merely an example in which the voltage supply terminal is the ground terminal.

With this configuration, when the input terminal 10 and the output terminal 11 are off, the high frequency signal input from the input terminal 10 can be released to the ground terminal side, and the isolation between the input and the output can be eliminated. It is possible to improve.

As described above, in the semiconductor integrated circuit of this embodiment, the transmission of the high frequency signal between the input and the output can be turned on / off by the single control voltage signal, so that the peripheral circuit can be simplified. be able to. Further, since the field effect transistor having three gate electrodes between the drain and the source is used, the distortion generated in the output is reduced and the switchable power is improved.

(Fifth Embodiment) Next, a fifth embodiment will be described. FIG. 5 is an electric circuit diagram showing the configuration of the unit circuit 30 of the semiconductor integrated circuit according to the fifth embodiment. In this embodiment, the field effect transistor is used as a variable resistor controlled by the gate-source voltage, and constitutes a bridge T-type attenuator circuit.

The basic circuit of this embodiment is constructed by combining two first and second basic circuits 8 and 9 having basically the same configuration as the basic circuit 8 of the second embodiment. However, in this embodiment, each of the basic circuits 8 and 9 is
In the above, four gate electrodes are provided between the source and the drain, and each gate electrode is connected to the common power supply terminal 13 or the common ground terminal via the four first resistance members 2a. In addition, the first signal terminal 6 of the second basic circuit 9 and the first signal terminal 6
The source and drain of the basic circuit 8 are connected via a third resistance member 2c having the same resistance value. Further, the first control terminal 3 and the second signal terminal 7 of the second basic circuit 9 are connected to the ground terminal, and the second basic circuit 9
The second control terminal 4 is connected to the third control terminal 12 which is common to the first control terminal 3 of the basic circuit 8. The second control terminal 4 of the first basic circuit 8 is connected to the power supply terminal 13. However, in the present embodiment, the first control terminal 3 of the second basic circuit 9 is connected to the ground terminal, but the first control terminal 3 does not necessarily have to be connected to the ground terminal, and the first voltage supply It may be connected to another voltage supply terminal that supplies a voltage having a predetermined potential difference from the voltage supplied from the power supply terminal 13, which is a terminal. That is, the configuration of the unit circuit 20 shown in FIG. 4 is merely an example in which the second voltage supply terminal is the ground terminal. The resistance value of the second resistance member 2b is the value Zo of the characteristic impedance of the transmission line in which the basic circuit is inserted, and generally 50 Ω is selected.

In the unit circuit 30 configured as described above, when a voltage between 0V and a voltage (for example, 3V) equal to the voltage of the power supply terminal 13 is applied to the third control terminal 12, it becomes 2
The drain-source resistances Rds of the two field-effect transistors 1 have complementary values. That is, when the drain-source resistance Rds1 of the field effect transistor 1 of one basic circuit is large, the drain-source resistance Rds2 of the field effect transistor 1 of the other basic circuit is small, and when the Rds1 is small, Rds2. Is large. The matching condition of the bridge T-type attenuator circuit is given by the following expression Rds1 × Rds2 = Zo ² . In the circuit of the present embodiment, since the above equation is approximately satisfied, it is possible to change the attenuation amount between the input and the output by inputting a single control voltage signal while maintaining good matching between the input and the output. it can.

Further, in the present embodiment, since each field effect transistor is provided with four gate electrodes,
In effect, the drains and sources of four FETs are connected in series. Therefore, 1/4 of the high frequency power applied from the input is applied between the drain and source of each field effect transistor. The voltage applied between the drain and the source is a factor that determines the distortion characteristic generated in the output. That is, when the drain-source voltage is large, larger distortion occurs, but in the high-frequency control semiconductor circuit of this embodiment, the distortion generated at the output is reduced.

In the present embodiment, the number of gate electrodes arranged between the drain and the source is set to 4, but it goes without saying that the switchable power is improved as the number of gates is increased to 2 or more.

(Sixth Embodiment) Next, a sixth embodiment will be described with reference to FIG. In the present embodiment, each element in each basic circuit has the same configuration as that of the basic circuit 8 in the first embodiment described above, and therefore the reference numerals of the elements in each basic circuit are omitted.

As shown in FIG. 6, each first signal terminal 6 of the first and second basic circuits 8 and 9 is individually connected to the first and second input terminals 10a and 10b. The second signal terminals 7 of the basic circuits 8 and 9 are connected to the common output terminal 11. Then, the first control terminal 3 of the first basic circuit 8
The second control terminal 4 of the second basic circuit 9 is connected to the common third control terminal 12. The second control terminal 4 of the first basic circuit 8 is connected to the power supply terminal 13, and the first control terminal 3 of the second basic circuit 9 is connected to the ground terminal.

Further, each of the basic circuits 8 and 9 is provided with a third basic circuit 18 for releasing a high frequency signal to the ground terminal when the field effect transistor is off. In the third basic circuit 18 attached to the first basic circuit 8, the first signal terminal 6 is common to the first signal terminal 6 of the first basic circuit 8, the first input terminal 10a, and the second signal terminal 7 is grounded. The first control terminal 3 is connected to the ground terminal, the second control terminal 4 is connected to the third control terminal 12 in common with the first control terminal 3 of the first basic circuit 8. In addition, in the third basic circuit 18 attached to the second basic circuit 9, the first signal terminal 6 is common to the first signal terminal 6 of the second basic circuit 9 and the second signal.
The input terminal 10b, the second signal terminal 7 to the ground terminal, the first
The control terminal 3 is connected to the third control terminal 12 in common with the second control terminal 4 of the second basic circuit 9, and the second control terminal is connected to the power supply terminal 13.

That is, in this embodiment, the complementary control voltage signal is applied to the field effect transistors of each of the basic circuits 8 and 9 through the single third control terminal 12 so that the two input terminals 10a are connected. , 10b can be mixed and output through a single output terminal 11. That is, each basic circuit 8 and 9 constitutes a unit circuit having a mixing function. Moreover,
Since the third basic circuit 18 is attached to each of the basic circuits 8 and 9, the field-effect transistor in each of the basic circuits 8 and 9 can release the high frequency signal when it is off to the ground terminal side, resulting in high isolation. It can exhibit its characteristics.

However, in the above embodiment, the third basic circuit 18 is attached to each of the basic circuits 8 and 9, but the third basic circuit 18 is attached only to one of the basic circuits 8 (or 9). Good.

Although the embodiment is omitted, at least one of the basic circuits 8 and 9 of the third embodiment, the fifth embodiment or the later-described seventh embodiment is used as the basic circuit of the present embodiment. It goes without saying that a third basic circuit 18 having the same configuration as the third basic circuit 18 may be attached.

The circuit shown in FIG. 6 is the unit circuit 20 shown in the fourth embodiment (however, the gate of the field effect transistor of the basic circuit 20 is a single gate type).
It can be seen as a combination of two.

(Seventh Embodiment) Next, a seventh embodiment will be described with reference to FIG. The circuit according to the present embodiment is the unit circuit 2 according to the third embodiment.
This is a combination of two first and second unit circuits 20a and 20b having the same configuration as 0 (see FIG. 3). As shown in FIG. 7, one of the output terminals 11a and 11b of each unit circuit is commonly connected to the third output terminal 14a, and the output terminal 11a of each unit circuit is
The other output terminals 11b of 11b are commonly connected to the fourth output terminal 14a. In addition, each unit circuit 20
The third control terminal 12 of a and 20b is commonly the fourth control terminal 1
Connected to 5. That is, each unit circuit 20a, 2
A high-frequency signal input to each input terminal 10 of 0b is alternately output from each output terminal 14a, 14b by a single control voltage signal to the third control terminal 15. That is, a combination of the unit circuits 20a and 20b forms a four-way switching circuit.

(Eighth Embodiment) FIG. 10 is a block diagram schematically showing the configuration of a circuit mounted in, for example, a dual-mode mobile phone. The basic circuits 8 and 9 shown in FIG. 3 are incorporated in this circuit. That is, four basic circuits 8a whose operation is controlled by a signal to the first control terminal 3 and whose power supply voltage VDD is applied to the second control terminal 4
8d and four basic circuits 9a to 9d whose operation is controlled by a signal to the second control terminal 4 and whose power supply voltage is applied to the first control terminal 3 are connected so as to alternately form a closed circuit. ing. Then, between the respective basic circuits, two first and second power amplifiers PA are arranged in a layout relation as shown in FIG.
1, PA2 and two first and second low noise amplifier LNAs
1, LNA2 and four antennas At1 to At4 are interposed. And each basic circuit 8a-8d, 9a-
9d, the signal to the single control signal terminal 16 is the power supply voltage V
Depending on whether it is DD or 0, it is turned on / off as shown in the following truth table.

[0060]

[Table 1] Note that, for example, the transmission unit Ot1 of the first power amplifier PA1
Has an output power of 1 W for the 0.8 GHz band, the transmitter Ot2 of the second power amplifier PA2 has an output power of 0.1 W for the 1.9 GHz band, and has a first low noise amplifier LNA1.
The receiving unit It1 of the second low noise power amplifier LNA2 is for 1.9 GHz.

As a practical use method of such a circuit, there are the following specific examples.

(Specific Example 1) Each antenna is used for both transmission and reception to provide a polarization diversity function. For example, the first
The third antennas At1 and At3 are used for horizontal polarization signals, and the second and fourth antennas At2 and At4 are used for vertical polarization signals. When it is desired to transmit a horizontally polarized signal from the first power amplifier PA1, the first antenna At is used, and when it is desired to transmit a vertically polarized signal, the fourth antenna At is used. The same applies when transmitting from the second power amplifier PA2,
The same applies when the signals are received by the low-noise amplifiers LNA1 and LNA2.

(Specific Example 2) By setting one of the antennas as the internal antenna and the other as the external antenna, the antennas for transmitting and receiving the respective amplifiers can be switched between the inside and the outside. For example, the first antennas At1 and At3 are the built-in whip antenna terminals, and the second and fourth antennas At
2, At4 can be used as an external antenna terminal.

[0064]

As described above, according to the invention of claim 1, it is possible to provide a basic circuit for constituting a semiconductor integrated circuit having a simplified control system.

According to the invention of claim 2 or 10, it is possible to reduce the distortion generated in the output, and thus it is possible to increase the amount of power that can be switched.

According to the invention of claim 3, when a plurality of basic circuits are arranged to form a semiconductor integrated circuit, the peripheral circuits can be simplified.

According to the fourth aspect of the present invention, the connection and disconnection between the input and output can be controlled by a single control input, so that the isolation between the input and output can be improved.

According to the invention of claim 5, in the semiconductor integrated circuit functioning as a bridge T-type attenuator, the attenuation amount between the input and the output can be changed by a single control input, thus simplifying the peripheral circuit. Can be achieved.

According to the invention of claim 6, 7, 8 or 9,
A single control voltage signal can be used to distribute, mix, and switch the high-frequency signals between the basic circuits, thus simplifying the peripheral circuits in the distributor and the like.

[Brief description of drawings]

FIG. 1 is an electric circuit diagram showing a configuration of a basic circuit in a high frequency semiconductor integrated circuit according to a first embodiment.

FIG. 2 is an electric circuit diagram showing a configuration of a basic circuit in a high frequency semiconductor integrated circuit according to a second embodiment.

FIG. 3 is an electric circuit diagram showing a configuration of a unit circuit in a high frequency semiconductor integrated circuit according to a third embodiment.

FIG. 4 is an electric circuit diagram showing a configuration of a high frequency distribution circuit according to a fourth embodiment.

FIG. 5 is an electric circuit diagram showing a configuration of a bridge T-type attenuator circuit according to a fifth embodiment.

FIG. 6 is an electric circuit diagram showing a configuration of a high frequency mixing circuit according to a sixth embodiment.

FIG. 7 is an electric circuit diagram showing a configuration of a high frequency four-way switching circuit according to a seventh embodiment.

FIG. 8 is an electric circuit diagram showing a configuration of a basic circuit in a conventional high-frequency semiconductor integrated circuit.

FIG. 9 is an electric circuit diagram showing a configuration of a switch circuit in which basic circuits in a conventional high-frequency semiconductor integrated circuit are combined.

FIG. 10 is an electric circuit diagram showing a configuration of a switching circuit according to an eighth embodiment.

[Explanation of symbols]

 1 Field Effect Transistor 2a 1st resistance member 2b 2nd resistance member 2c 3rd resistance member 3 1st control terminal 4 2nd control terminal 5a 1st capacitor 5b 2nd capacitor 6 1st signal terminal 7 2nd signal terminal 8th 1 basic circuit 9 2nd basic circuit 10 input terminal 11 output terminal 12 3rd control terminal 13 power supply terminal 14a 3rd output terminal 14b 4th output terminal 15 4th control terminal 18 3rd basic circuit 20 unit circuit

Claims (10)

[Claims] 1. A semiconductor integrated circuit having a basic circuit for transmitting a high frequency signal, wherein the basic circuit comprises a field effect transistor having a gate, a source and a drain, the field effect transistor and the field effect transistor. The first and second signal terminals for inputting / outputting a high frequency signal to / from the outside of the transistor, and the wirings between the source / drain of the field effect transistor and the signal terminals, respectively, are used. A DC component blocking member that includes at least a capacitor component whose impedance in the frequency band is lower than the line impedance, a first control terminal connected to the gate, and the gate-first control terminal, and the impedance is the line impedance. A first resistor having a higher resistance characteristic for blocking input of a high frequency signal to the first control terminal. A blocking member; a second control terminal connected to a wiring between at least one of the source / drain of the field effect transistor and the DC component blocking member via a branch wiring; and a second control terminal interposed in the branch wiring. A second blocking member for blocking the input of a high frequency signal to the second control terminal, the impedance being higher than the line impedance, and the high frequency between the first signal terminal and the second signal terminal of the basic circuit. A semiconductor integrated circuit characterized in that a signal transmission amount is controlled by a control voltage signal between the first control terminal and the second control terminal. 2. The semiconductor integrated circuit according to claim 1, wherein the same number of gates and first control terminals are arranged, and the first blocking member is interposed between each gate and the first control terminal. A semiconductor integrated circuit characterized by being provided. 3. The semiconductor integrated circuit according to claim 1, wherein a plurality of the basic circuits are provided, and a predetermined voltage is connected to a first control terminal of a part of the basic circuits of the plurality of basic circuits. A first voltage supply terminal for supplying and a voltage connected to the second control terminal of another basic circuit of the plurality of basic circuits and having a predetermined potential difference from the voltage supplied by the first voltage supply terminal are supplied. And a second voltage supply terminal for controlling the transmission of the high frequency signal between the first signal terminal and the second signal terminal by the signal to the first control terminal. In the other basic circuit described above, the semiconductor integrated circuit is configured to control a transmission amount of a high frequency signal between the first signal terminal and the second signal terminal by a signal to the second control terminal. 4. The semiconductor integrated circuit according to claim 3, wherein two basic circuits are provided, an input terminal commonly connected to each first signal terminal of each basic circuit, and each basic circuit. An output terminal connected to the second signal terminal of one of the basic circuits, a ground terminal connected to the second signal terminal of the other basic circuit of the basic circuits, or one of the basic circuits A third control terminal commonly connected to a first control terminal of one of the basic circuits and a second control terminal of the other basic circuit of the above basic circuits to input a control voltage signal, A semiconductor integrated circuit in which a unit circuit that functions as a switch is configured by each of the basic circuits. 5. The semiconductor integrated circuit according to claim 3, wherein two basic circuits are provided, an input terminal commonly connected to each first signal terminal of each basic circuit, and each basic circuit. An output terminal connected to the second signal terminal of one of the basic circuits, a ground terminal connected to the second signal terminal of the other basic circuit of the basic circuits, or one of the basic circuits A third control terminal commonly connected to the first control terminal of one of the basic circuits and the second control terminal of the other basic circuit of the above basic circuits to input a control voltage signal; The circuit further comprises two resistance members that are respectively interposed between the source and drain of one basic circuit of the circuits and the first signal terminal of the other basic circuit of the basic circuits, and that have the same resistance value. With each of the above basic circuits, The semiconductor integrated circuit, wherein a unit circuit functioning as Teneta is configured. 6. The semiconductor integrated circuit according to claim 3, wherein two basic circuits are provided, an input terminal commonly connected to each first signal terminal of each basic circuit, and each basic circuit. First and second output terminals individually connected to the respective second signal terminals of the circuit, a first control terminal of one of the basic circuits of the basic circuits, and the other basic circuit of the basic circuits. And a third control terminal commonly connected to the second control terminal for inputting a control voltage signal, wherein the high-frequency signal input through the common input terminal by each of the basic circuits is input to the third control terminal. 1. A semiconductor integrated circuit, comprising a unit circuit having a signal distribution function for outputting via the first and second output terminals, respectively. 7. The semiconductor integrated circuit according to claim 3, wherein the two basic circuits are provided and used as first and second basic circuits, and the first signal terminals of the first and second basic circuits are connected to the first signal terminals. First and second input terminals individually connected, an output terminal commonly connected to each second signal terminal of each of the basic circuits, and a first control of one of the basic circuits of each of the basic circuits. A third control terminal commonly connected to the terminal and a second control terminal of the other basic circuit of the basic circuits, for inputting a control voltage signal. , A semiconductor integrated circuit comprising a unit circuit having a signal mixing function for outputting a high-frequency signal input through the second input terminal through a common output terminal. 8. The semiconductor integrated circuit according to claim 6, wherein the two unit circuits are first and second unit circuits, respectively, and one of the first and second output terminals of each unit circuit is provided. A third output terminal commonly connected to the output terminals; a fourth output terminal commonly connected to the other output terminal of the first and second output terminals of the unit circuits; A fourth control terminal commonly connected to each third control terminal of the circuit is further provided, and a high frequency signal input from each input terminal of each unit circuit is changed by a voltage signal input to the fourth control terminal. A semiconductor integrated circuit characterized in that a four-way changeover switch is constituted by the first and second unit circuits, which are configured to be switched so as to alternately output from the third and fourth output terminals of the unit circuit. . 9. The semiconductor integrated circuit according to claim 6, 7 or 8, wherein at least one of the basic circuits is provided with a third basic circuit having the same configuration as each of the basic circuits. The first signal terminal of the third basic circuit is at least 1
Two basic circuits are connected to the input terminal of the unit circuit, the second signal terminal of the third basic circuit is connected to the ground terminal, the first control terminal of the basic circuit to which the third basic circuit is attached, When connected to the third control terminal, the second control terminal of the third basic circuit is connected to the third control terminal, and the first control terminal of the third basic circuit is connected to the first voltage supply terminal and the If the second control terminal of the basic circuit to which the third basic circuit is attached is connected to the third control terminal while being connected to one of the second voltage supply terminals, the third basic circuit The first control terminal is connected to the third control terminal, and the second control terminal of the third basic circuit is connected to one of the first voltage supply terminal and the second voltage supply terminal. Semiconductor integrated circuit. 10. A method according to claim 3, 4, 5, 6, 7, 8 or 9.
In the semiconductor integrated circuit described above, in at least one of the basic circuits,
The same number of the gates and the first control terminals are arranged, and the first blocking member is interposed between each gate and the first control terminal.