JPH0822033A - Liquid crystal display device - Google Patents

Liquid crystal display device

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Publication number
JPH0822033A
JPH0822033A JP15336394A JP15336394A JPH0822033A JP H0822033 A JPH0822033 A JP H0822033A JP 15336394 A JP15336394 A JP 15336394A JP 15336394 A JP15336394 A JP 15336394A JP H0822033 A JPH0822033 A JP H0822033A
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JP
Japan
Prior art keywords
electrode
display
substrate
resistance element
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15336394A
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Japanese (ja)
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JP3291396B2 (en
Inventor
Yasushi Kaneko
金子　　靖
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Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
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Priority to JP15336394A priority Critical patent/JP3291396B2/en
Publication of JPH0822033A publication Critical patent/JPH0822033A/en
Application granted granted Critical
Publication of JP3291396B2 publication Critical patent/JP3291396B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal Display Device Control (AREA)

Abstract

PURPOSE:To obviate the inversion of a halftone contrast display even when a visual angle is inclined forward as the voltages impressed to respective display electrodes constituting one pixel vary, to obtain a high contrast as a nonlinear resistance element structure is Ta-Ta2O5-ITO and to obtain a specified display characteristic even if a photoetching stage fluctuates as the areas of the nonlinear resistance elements are constant. CONSTITUTION:This liquid crystal display device has a first substrate having the nonlinear resistance elements consisting of first electrodes 2, nonlinear resistance layers and second electrodes 4 formed of indium tin oxide films, display electrodes and driving electrodes 9 and a second substrate having counter electrodes 11. The one pixel is composed of the one counter electrode 11, the plural display electrodes 6, 8 and the nonlinear resistance elements 5, 7 connected to these display electrodes 6, 8 and is so constituted that the areas of the display electrodes are the same and that the areas of the nonlinear resistance elements 5, 7 vary.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、アクティブマトリクス
液晶表示パネルに適用する液晶スイッチング素子に用い
られる金属−絶縁体−金属、あるいは金属−絶縁体−透
明導電体構造（以下ＭＩＭと記載する）を有する非線形
抵抗素子をもつ液晶表示パネルの構造に関する。The present invention relates to a metal-insulator-metal or metal-insulator-transparent conductor structure (hereinafter referred to as MIM) used in a liquid crystal switching element applied to an active matrix liquid crystal display panel. The present invention relates to the structure of a liquid crystal display panel having a nonlinear resistance element.

【０００２】[0002]

【従来の技術】近年、液晶表示パネルを用いた液晶表示
装置の表示容量は、大容量化の一途をたどっている。そ
して、単純マトリクス構成の表示装置にマルチプレクス
駆動を用いる表示方式は、高時分割化するに従ってコン
トラストの低下、あるいは応答速度の低下が生じる。し
たがって、２００本程度の走査線をもゆ表示装置では、
充分なコントラストを得ることが難しくなる。2. Description of the Related Art In recent years, the display capacity of a liquid crystal display device using a liquid crystal display panel has been increasing. In the display system using the multiplex drive for the display device having the simple matrix configuration, the contrast or the response speed is lowered as the time division is increased. Therefore, in a display device having about 200 scanning lines,
It becomes difficult to obtain sufficient contrast.

【０００３】そこで、このような欠点を除去するため
に、個々の画素にスイッチング素子を設けるアクティブ
マトリクス方式の液晶表示パネルが採用されてきてい
る。Therefore, in order to eliminate such a defect, an active matrix type liquid crystal display panel in which a switching element is provided in each pixel has been adopted.

【０００４】このアクティブマトリクス方式の液晶表示
パネルには、スイッチング素子として、薄膜トランジス
タ（ＴＦＴ）を用いる三端子系と、非線形抵抗素子を用
いる二端子系とがある。そして、これらのなかでは構造
や製造方法が簡単な点で、二端子系が優れている。This active matrix type liquid crystal display panel has a three-terminal system using thin film transistors (TFTs) as a switching element and a two-terminal system using a non-linear resistance element. Among them, the two-terminal system is superior in that the structure and the manufacturing method are simple.

【０００５】この二端子系には、ダイオード型や、バリ
スタ型や、ＭＩＭ型などが開発されている。このうち、
ＭＩＭ型はとくに構造が簡単で、そのうえ製造工程が短
いという特徴を備えている。For the two-terminal system, diode type, varistor type, MIM type, etc. have been developed. this house,
The MIM type is characterized by a particularly simple structure and a short manufacturing process.

【０００６】図６は、非線形抵抗素子を用いた従来のＭ
ＩＭ型液晶表示装置の構成を示す平面図である。さらに
図７は、図６の平面図におけるＡ−Ａ線での断面を示す
断面図である。以下図６と図７とを交互に用いて従来技
術を説明する。FIG. 6 shows a conventional M using a non-linear resistance element.
It is a top view which shows the structure of an IM type liquid crystal display device. Further, FIG. 7 is a cross-sectional view showing a cross section taken along the line AA in the plan view of FIG. The prior art will be described below by alternately using FIG. 6 and FIG. 7.

【０００７】第１の基板３１上には、第１の電極３２を
設け、この第１の電極３２上に、非線形抵抗層３３を設
ける。さらに第２の電極３４を非線形抵抗層３３上にオ
ーバーラップするように設けて、非線形抵抗素子３０を
構成している。この第２の電極３４の一部は、表示電極
３５を兼ねている。A first electrode 32 is provided on the first substrate 31, and a non-linear resistance layer 33 is provided on the first electrode 32. Further, the second electrode 34 is provided so as to overlap the non-linear resistance layer 33 to form the non-linear resistance element 30. A part of the second electrode 34 also serves as the display electrode 35.

【０００８】そして第２の基板３６には、表示電極３５
と対向するように対向電極３９を設けている。The display electrode 35 is formed on the second substrate 36.
A counter electrode 39 is provided so as to face the.

【０００９】第１の基板３１上に設ける第１の電極３２
は、図６の平面図に示すように、通常は第１の電極３２
と同一材料で形成する駆動電極３８と接続し、表示電極
３５とは一定の間隔寸法を隔てて配置している。A first electrode 32 provided on a first substrate 31
Is normally the first electrode 32, as shown in the plan view of FIG.
It is connected to the drive electrode 38 formed of the same material as the above, and is arranged with a constant space dimension from the display electrode 35.

【００１０】表示電極３５は、対向電極３９と重なり合
うように配置することにより、液晶表示パネルの１画素
を構成する。The display electrode 35 constitutes one pixel of the liquid crystal display panel by arranging the display electrode 35 so as to overlap the counter electrode 39.

【００１１】さらに第１の基板３１と第２の基板３６と
は、液晶４１の分子を規則的に並べるための処理層とし
て、それぞれ配向膜４０、４０を設ける。Further, the first substrate 31 and the second substrate 36 are provided with alignment films 40 and 40, respectively, as processing layers for regularly arranging the molecules of the liquid crystal 41.

【００１２】さらにそのうえスペーサー４２によって、
第１の基板３１と第２の基板３６とを所定の間隔をもっ
て対向させ、第１の基板３１と第２の基板３６との間に
は、液晶４１を封入する。Furthermore, by means of the spacer 42,
The first substrate 31 and the second substrate 36 are opposed to each other with a predetermined gap, and the liquid crystal 41 is sealed between the first substrate 31 and the second substrate 36.

【００１３】駆動電極３８に走査信号を印加するとき
は、対向電極３９にデータ信号を印加することによっ
て、表示電極３５を所望の明るさに制御することができ
る。When the scanning signal is applied to the drive electrode 38, the display electrode 35 can be controlled to a desired brightness by applying the data signal to the counter electrode 39.

【００１４】また逆に、対向電極３９に走査信号を印加
し、駆動電極３８にデータ信号を印加しても、表示電極
３５を所望の明るさに制御することが可能である。Conversely, even if a scanning signal is applied to the counter electrode 39 and a data signal is applied to the drive electrode 38, the display electrode 35 can be controlled to have a desired brightness.

【００１５】書込み時に駆動電極３８と対向電極３９の
間に印加する書込み電圧Ｖｉｎのうち、非線形抵抗素子
３０に印加する電圧Ｖｍｉｍは、表示電極３５の容量Ｃ
ｌｃを非線形抵抗素子３０の容量Ｃｍｉｍで除した値で
ある容量比ＣＲを用い、Ｖｍｉｍ＝Ｖｉｎ×ＣＲ／（１
＋ＣＲ）で決定される。Of the write voltage Vin applied between the drive electrode 38 and the counter electrode 39 during writing, the voltage Vmim applied to the nonlinear resistance element 30 is the capacitance C of the display electrode 35.
Using the capacitance ratio CR which is a value obtained by dividing lc by the capacitance Cmim of the nonlinear resistance element 30, Vmim = Vin × CR / (1
+ CR).

【００１６】非線形抵抗素子３０の抵抗は、印加電圧が
高いほど低くなるため、容量比ＣＲが大きいとＶｍｉｍ
が大きくなり、非線形抵抗素子３０は低抵抗になり、液
晶にデータ信号を有効に書込むことができる。Since the resistance of the non-linear resistance element 30 becomes lower as the applied voltage becomes higher, if the capacitance ratio CR is large, Vmim.
Becomes large, the resistance of the nonlinear resistance element 30 becomes low, and a data signal can be effectively written in the liquid crystal.

【００１７】書込み終了後の保持時には、表示電極３５
と対向電極３９間の液晶４１に保持する電圧Ｖｌｃは、
ＣｌｃとＣｍｉｍの容量結合によりΔＶだけ電圧降下
し、ΔＶ＝Ｖｉｎ／（１＋ＣＲ）で示される。At the time of holding after writing is completed, the display electrode 35
The voltage Vlc held in the liquid crystal 41 between the counter electrode 39 and the counter electrode 39 is
The voltage drops by ΔV due to capacitive coupling between Clc and Cmim, and is represented by ΔV = Vin / (1 + CR).

【００１８】したがって、容量比ＣＲが大きいほどΔＶ
が小さくなる。その結果、液晶４１に保持する電圧Ｖｌ
ｃは大きくできる。その後、つぎの書込みまで、液晶４
１に保持する電圧Ｖｌｃは液晶容量Ｃｌｃにより保持さ
れる。Therefore, the larger the capacity ratio CR, the more ΔV
Becomes smaller. As a result, the voltage Vl held in the liquid crystal 41
c can be increased. After that, until the next writing, liquid crystal 4
The voltage Vlc held at 1 is held by the liquid crystal capacitance Clc.

【００１９】[0019]

【発明が解決しようとする課題】ところで、従来の液晶
表示パネルは、液晶４１の配向状態が第１の基板３１と
第２の基板３６の間で８０〜１００度ねじれた状態にあ
るツイストネマティック（ＴＮ）モードである。このＴ
Ｎモードの液晶表示パネルは、この液晶表示パネルを前
後左右に傾けて見たときの明るさが変わり、視角特性が
悪い。By the way, in the conventional liquid crystal display panel, the twisted nematic (in which the alignment state of the liquid crystal 41 is twisted by 80 to 100 degrees between the first substrate 31 and the second substrate 36). TN) mode. This T
The N-mode liquid crystal display panel changes in brightness when the liquid crystal display panel is tilted to the front, rear, left and right, and has a bad viewing angle characteristic.

【００２０】図８に従来例の液晶表示パネルの前後方向
の表示特性を示す。横軸は表示電極３５と対向電極３９
間への印加電圧を示し、縦軸は透過率を示す。９０゜ツ
イストのＴＮモードの液晶表示パネルに、上下の偏光板
を９０゜直交する状態で設置し、ノーマリ白モ−ドのと
きである。FIG. 8 shows the display characteristics of the conventional liquid crystal display panel in the front-rear direction. The horizontal axis represents the display electrode 35 and the counter electrode 39.
The applied voltage between the two is shown, and the vertical axis shows the transmittance. In a normally white mode, the upper and lower polarizing plates are installed in a 90 ° twisted TN mode liquid crystal display panel so as to be orthogonal to each other by 90 °.

【００２１】図８のグラフの実線Ｌは、液晶表示パネル
を正面から見たときの透過率−電圧特性を示し、実線Ｍ
は前方向に４０゜傾けたときの透過率−電圧特性を示
し、実線Ｎは後方向に４０゜傾けたときの透過率−電圧
特性を示す。The solid line L in the graph of FIG. 8 shows the transmittance-voltage characteristics when the liquid crystal display panel is viewed from the front, and the solid line M.
Indicates the transmittance-voltage characteristic when tilted forward by 40 °, and the solid line N indicates the transmittance-voltage characteristic when tilted backward by 40 °.

【００２２】正面で、黒表示を出すためにはＶ１の電圧
を印加すればよく、白表示を出すためにはＶ３の電圧を
印加し、中間調の灰色表示をするためにはＶ２の電圧を
印加する。On the front side, the voltage of V1 may be applied for producing a black display, the voltage of V3 may be applied for producing a white display, and the voltage of V2 may be applied for producing a gray display of halftone. Apply.

【００２３】灰色表示と黒表示とを表示した状態で、液
晶表示パネルを後方向に４０゜傾けると、黒表示は実線
Ｌと直線Ｖ１の交点から、実線Ｎと直線Ｖ１の交点へ変
わり明るくなる。これに対して、灰色表示は実線Ｌと直
線Ｖ２の交点から、実線Ｎと直線Ｖ２への交点に変わ
り、かなり白くなりコントラストが低下する。When the liquid crystal display panel is tilted backward by 40 ° while displaying the gray display and the black display, the black display changes from the intersection of the solid line L and the straight line V1 to the intersection of the solid line N and the straight line V1 and becomes bright. . On the other hand, the gray display changes from the intersection of the solid line L and the straight line V2 to the intersection of the solid line N and the straight line V2, and the display becomes considerably white and the contrast decreases.

【００２４】これとは反対に、液晶表示パネルを前方向
に４０゜傾けると、黒表示は実線Ｌと直線Ｖ１の交点か
ら、実線Ｍと直線Ｖ１の交点へ変わり明るくなるが、灰
色表示は実線Ｌと直線Ｖ２の交点から、実線Ｍと直線Ｖ
２への交点に変わり、逆に黒くなり、黒と灰色表示の反
転が生じる。このため、著しく表示品質が低下するとい
う問題点が発生する。On the contrary, when the liquid crystal display panel is tilted by 40 ° in the forward direction, the black display changes from the intersection of the solid line L and the straight line V1 to the intersection of the solid line M and the straight line V1 and becomes bright, but the gray display shows the solid line. From the intersection of L and the straight line V2, the solid line M and the straight line V
It changes to the intersection of 2 and becomes black on the contrary, and inversion of black and gray display occurs. Therefore, there is a problem that the display quality is significantly reduced.

【００２５】この視角特性を改善する手段として、特開
平５−５３１５０号公報に開示されている手段がある。
この公報には、１画素を複数の表示電極とその表示電極
に接続する非線形抵抗素子で構成し、しかも表示電極と
非線形抵抗素子の容量比を異なるように構成することが
記載されている。As a means for improving the viewing angle characteristic, there is a means disclosed in Japanese Patent Laid-Open No. 53150/1993.
This publication describes that one pixel is composed of a plurality of display electrodes and a non-linear resistance element connected to the display electrodes, and that the display electrodes and the non-linear resistance elements have different capacitance ratios.

【００２６】特開平５−５３１５０号公報で図１として
記載されている図面を、９０゜回転した形で転記した図
９を用いて、この公報に記載の液晶表示装置の構成を説
明する。The configuration of the liquid crystal display device described in this publication will be described with reference to FIG. 9, which is a drawing rotated 90 ° from the drawing shown in FIG. 1 in JP-A-5-53150.

【００２７】１画素を１つの対向電極５１と、第１の表
示電極５４と第２の表示電極５５とで構成する。しか
も、第１の表示電極５４と第１の非線形抵抗素子５８の
面積比と、第２の表示電極５５と第２の非線形抵抗素子
５９との面積比を変える。One pixel is composed of one counter electrode 51, a first display electrode 54 and a second display electrode 55. Moreover, the area ratio between the first display electrode 54 and the first nonlinear resistance element 58 and the area ratio between the second display electrode 55 and the second nonlinear resistance element 59 are changed.

【００２８】したがって、第１の表示電極５４と第１の
非線形抵抗素子５８との容量比と、第２の表示電極５５
と第２の非線形抵抗素子５９の容量比が異なり、同一の
データ信号で書込んでも、第１の表示電極５４と第２の
表示電極５５の駆動電圧が変わるようになる。Therefore, the capacitance ratio between the first display electrode 54 and the first non-linear resistance element 58, and the second display electrode 55.
And the capacitance ratio of the second non-linear resistance element 59 is different, and even if the same data signal is written, the drive voltage of the first display electrode 54 and the second display electrode 55 changes.

【００２９】図５のグラフを使用して、液晶表示装置で
視角特性が改善される作用を説明する。図５の横軸は駆
動電極５０と対向電極５１間に印加する電圧を示し、縦
軸は液晶表示装置の透過率を示す。The operation of improving the viewing angle characteristics in the liquid crystal display device will be described with reference to the graph of FIG. The horizontal axis of FIG. 5 represents the voltage applied between the drive electrode 50 and the counter electrode 51, and the vertical axis represents the transmittance of the liquid crystal display device.

【００３０】実線Ｘは、容量比ＣＲ＝表示電極容量Ｃｌ
ｃ／非線形抵抗素子容量Ｃｍｉｍの大きな第２の表示電
極５５のときの前方向に４０゜傾けた電圧−透過率曲線
を示し、実線Ｙは、容量比の小さな第１の表示電極５４
のときの前方向に４０゜傾けた電圧−透過率特性を示
す。The solid line X indicates the capacitance ratio CR = display electrode capacitance Cl.
c / non-linear resistance element shows a voltage-transmittance curve tilted by 40 ° in the forward direction when the second display electrode 55 has a large capacitance Cmim, and the solid line Y indicates the first display electrode 54 having a small capacitance ratio.
In this case, the voltage-transmittance characteristic inclined by 40 ° in the forward direction is shown.

【００３１】容量比の小さい第１の表示電極５４では、
書込み時の非線形抵抗素子への印加電圧が低くなり、非
線形抵抗素子の抵抗が充分小さくならず、書込み効率が
低下する。さらに、保持時の電圧降下量ΔＶも大きくな
るため、容量比の高い表示電極に比べて高電圧を印加し
なくてはならないため、実線Ｙは実線Ｘよりも高電圧側
へ移動する。In the first display electrode 54 having a small capacitance ratio,
The voltage applied to the non-linear resistance element at the time of writing decreases, the resistance of the non-linear resistance element does not become sufficiently small, and the writing efficiency decreases. Furthermore, since the voltage drop amount ΔV during holding also becomes large, a high voltage must be applied as compared with a display electrode having a high capacitance ratio, and therefore the solid line Y moves to a higher voltage side than the solid line X.

【００３２】画素の明るさは、複数の表示電極の平均と
なる。平均の電圧−透過率曲線を破線Ｚで示す。正面か
ら見て黒表示の印加電圧Ｖ１と灰色表示のＶ２を印加す
るとき、実線Ｘでは黒灰の反転が起きているが、破線Ｚ
では、黒灰反転はおきず、前方向の視角特性が改善され
る。The brightness of a pixel is the average of a plurality of display electrodes. The average voltage-transmittance curve is shown by the dashed line Z. When the applied voltage V1 for black display and V2 for gray display are applied when viewed from the front, black gray inversion occurs in the solid line X, but the broken line Z
In, black ash inversion does not occur, and the viewing angle characteristic in the forward direction is improved.

【００３３】しかしながら、図５の破線Ｚの急峻性が、
実線Ｘの急峻性よりも低下していることからもわかるよ
うに、正面の電圧−透過率曲線Ｌの急峻性も低下する。
このため、黒表示をするためには、図８における電圧Ｖ
１以上の電圧が必要となり、非線形抵抗素子の駆動能力
として、Ｖ１−Ｖ３よりも、さらに大きな駆動能力が必
要になる。However, the steepness of the broken line Z in FIG.
As can be seen from the fact that the steepness of the solid line X is lower, the steepness of the front voltage-transmittance curve L is also lower.
Therefore, in order to display black, the voltage V in FIG.
A voltage of 1 or more is required, and a driving capability of the non-linear resistance element is required to be higher than V1-V3.

【００３４】ＭＩＭ素子の駆動能力は、素子構造や素子
構成や素子材料や製造条件により決定されるが、最も影
響が大きいのか素子材料である。The driving ability of the MIM element is determined by the element structure, the element configuration, the element material, and the manufacturing conditions. The element material has the greatest influence.

【００３５】さきの特開平５−０５３１５０号公報で使
用している非線形抵抗素子は、図９に示すように第１の
電極５２と、第１の電極５２を陽極酸化して設ける非線
形抵抗層と、第２の電極５６と第２の電極５７とで構成
している。The non-linear resistance element used in the above-mentioned Japanese Patent Laid-Open No. 05-053150 has a first electrode 52 and a non-linear resistance layer provided by anodizing the first electrode 52 as shown in FIG. , The second electrode 56 and the second electrode 57.

【００３６】この公報中では、詳細には記載されていな
いが、第２の電極５６、５７と表示電極５４、５５の材
質が異なっているのは明白でる。そして、第２の電極５
６、５７としては、クロム（Ｃｒ）などの金属膜が使用
されていると推定される。Although not described in detail in this publication, it is clear that the materials of the second electrodes 56 and 57 and the display electrodes 54 and 55 are different. And the second electrode 5
It is presumed that a metal film of chromium (Cr) or the like is used as each of 6, 57.

【００３７】第１の電極５２としてタンタル（Ｔａ）膜
を用いて、Ｔａ−Ｔａ2 Ｏ5 −Ｃｒの素子材料で形成す
る非線形抵抗素子は駆動能力が少ない。このため、充分
大きな駆動電圧を印加することができず、表示コントラ
ストが低下するために、視角特性が改善されても、実用
化が難しい。A non-linear resistance element formed of a Ta-Ta 2 O 5 -Cr element material using a tantalum (Ta) film as the first electrode 52 has a small driving ability. For this reason, a sufficiently large driving voltage cannot be applied, and the display contrast is lowered, so that it is difficult to put it into practical use even if the viewing angle characteristic is improved.

【００３８】またさらに、特開平５−５３１５０号公報
の図１、図５、図６のいずれにおいても、面積の大きな
表示電極には面積の大きな非線形抵抗素子を、面積の小
さな表示電極には面積の小さな非線形抵抗素子を接続し
ている。Furthermore, in any of FIGS. 1, 5 and 6 of Japanese Patent Laid-Open No. 53150/1993, a large area non-linear resistance element is used for a large area display electrode, and an area large area is used for a small area display electrode. Is connected to a small non-linear resistance element.

【００３９】したがって、表示電極と非線形抵抗素子と
の面積比の変化量が少なくなっており、容量比の差も少
なくなり、表示電極間の駆動電圧差を大きくすることは
困難であるといわざるをえない。Therefore, the amount of change in the area ratio between the display electrodes and the non-linear resistance element is small, the difference in the capacitance ratio is small, and it is difficult to increase the drive voltage difference between the display electrodes. I can't get it.

【００４０】さらに、非常に小さな第２の非線形抵抗素
子５９を使用しているため、非線形抵抗素子を形成する
フォトエッチング工程でのオーバーエッチングやアンダ
ーエッチングによる面積比の変動を受ける確率が、第１
の非線形抵抗素子５８よりも第２の非線形抵抗素子５９
の方が大きい。このために、駆動電圧が基板毎に変動す
る。Furthermore, since the very small second non-linear resistance element 59 is used, the probability that the area ratio is changed by over-etching or under-etching in the photo-etching process for forming the non-linear resistance element is the first.
Second non-linear resistance element 59 rather than the non-linear resistance element 58 of
Is bigger. For this reason, the drive voltage varies from substrate to substrate.

【００４１】本発明の目的は、駆動能力の大きなＭＩＭ
素子と、表示電極と非線形抵抗素子との容量比が大きく
異なる複数の表示電極を用いて、液晶表示パネルを前方
向へ傾けたときに発生する黒と灰色表示の反転を押さえ
て、良好な視角特性を有し、しかもコントラストも充分
な液晶表示装置の構造を提供することである。An object of the present invention is to provide a MIM having a large driving ability.
By using multiple display electrodes that have a large difference in capacitance ratio between the display element and the non-linear resistance element, it is possible to suppress the inversion of black and gray display that occurs when the liquid crystal display panel is tilted forward and to achieve a good viewing angle. An object of the present invention is to provide a structure of a liquid crystal display device having characteristics and having sufficient contrast.

【００４２】さらに本発明の目的は、フォトエッチング
工程でのオーバーエッチングやアンダーエッチングがあ
っても、複数の表示電極の駆動電圧差があまり変化せ
ず、常に一定の表示特性が得られる液晶表示装置の構造
を提供することである。Further, an object of the present invention is to provide a liquid crystal display device in which even if over-etching or under-etching in the photo-etching process is performed, the driving voltage difference between a plurality of display electrodes does not change so much and constant display characteristics are always obtained. Is to provide the structure of.

【００４３】[0043]

【課題を解決するための手段】上記目的を達成するため
に、本発明の液晶表示装置は、第１の電極と非線形抵抗
層と第２の電極とからなる非線形抵抗素子と表示電極と
駆動電極とを有する第１の基板と、対向電極を有する第
２の基板と、第１の基板と第２の基板との間に封入する
液晶とを備え、１画素を１つの対向電極と複数の表示電
極と各表示電極に接続する非線形抵抗素子とで構成し、
そしてそれぞれの非線形抵抗素子の面積は同一で、かつ
表示電極の面積が異なるように構成し、非線形抵抗素子
と表示電極との容量比が異なることを特徴とする。In order to achieve the above object, a liquid crystal display device of the present invention comprises a non-linear resistance element comprising a first electrode, a non-linear resistance layer and a second electrode, a display electrode and a drive electrode. A first substrate having a counter electrode, a second substrate having a counter electrode, and a liquid crystal sealed between the first substrate and the second substrate, and one pixel having one counter electrode and a plurality of displays. It consists of an electrode and a non-linear resistance element connected to each display electrode,
Each of the non-linear resistance elements has the same area and the display electrodes have different areas, and the non-linear resistance element and the display electrode have different capacitance ratios.

【００４４】また本発明の液晶表示装置は、第１の電極
と非線形抵抗層と第２の電極とからなる非線形抵抗素子
と表示電極と駆動電極とを有する第１の基板と、対向電
極を有する第２の基板と、第１の基板と第２の基板との
間に封入する液晶とを備え、１画素を１つの対向電極と
複数の表示電極と各表示電極に接続する非線形抵抗素子
とで構成し、そしてそれぞれの表示電極の面積は同一
で、かつ非線形抵抗素子の面積が異なるように構成し、
非線形抵抗素子と表示電極との容量比が異なることを特
徴とする。Further, the liquid crystal display device of the present invention has a first substrate having a non-linear resistance element including a first electrode, a non-linear resistance layer and a second electrode, a display electrode and a drive electrode, and a counter electrode. A second substrate and a liquid crystal sealed between the first substrate and the second substrate are provided, and one pixel includes one counter electrode, a plurality of display electrodes, and a non-linear resistance element that connects each display electrode. And the area of each display electrode is the same, and the area of the non-linear resistance element is different,
The non-linear resistance element and the display electrode have different capacitance ratios.

【００４５】また本発明の液晶表示装置は、第１の電極
と非線形抵抗層と第２の電極とからなる非線形抵抗素子
と表示電極と駆動電極を有する第１の基板と、対向電極
を有する第２の基板と、第１の基板と第２の基板との間
に封入する液晶とを備え、１画素を１つの対向電極と複
数の大きさの異なる表示電極と各表示電極に接続する複
数の大きさの異なる非線形抵抗素子とで構成し、そして
面積の大きな表示電極には面積の小さい非線形抵抗素子
を接続し、面積の小さな表示電極には面積の大きな非線
形抵抗素子を接続し、非線形抵抗素子と表示電極との容
量比が異なることを特徴とする。Further, the liquid crystal display device of the present invention has a first substrate having a non-linear resistance element including a first electrode, a non-linear resistance layer and a second electrode, a display electrode and a drive electrode, and a first substrate having a counter electrode. A second substrate and liquid crystal sealed between the first substrate and the second substrate, and one pixel is connected to one counter electrode, a plurality of display electrodes of different sizes, and a plurality of display electrodes. The non-linear resistance element is composed of non-linear resistance elements of different sizes, and a large-area display electrode is connected to a small-area non-linear resistance element, and a small-area display electrode is connected to a large-area non-linear resistance element. And a display electrode having a different capacitance ratio.

【００４６】さらにまた本発明の液晶表示装置は、第１
の基板に形成する第２の電極は、表示電極と同一材料で
ある透明導電膜で構成ることを特徴とする。Furthermore, the liquid crystal display device of the present invention comprises the first
The second electrode formed on the substrate is formed of a transparent conductive film that is the same material as the display electrode.

【００４７】またさらに本発明の液晶表示装置は、第１
の基板の非線形抵抗素子の上、あるいは第１の基板の非
線形抵抗素子と表示電極上には、絶縁薄膜を備えること
を特徴とする。Furthermore, the liquid crystal display device of the present invention comprises the first
An insulating thin film is provided on the non-linear resistance element of the substrate, or on the non-linear resistance element and the display electrode of the first substrate.

【００４８】[0048]

【作用】本発明の液晶表示装置の画素構造は、１画素を
非線形抵抗素子容量と表示電極容量との容量比が異なる
複数の画素に分割した構造となり、容量比が異なってい
る。このため、同一のデータ信号で書込んでも、それぞ
れの表示電極への印加電圧が変わるようになり、電圧−
透過率特性がなだらかになり、視角特性を改善すること
ができる。The pixel structure of the liquid crystal display device of the present invention is a structure in which one pixel is divided into a plurality of pixels having different capacitance ratios of the nonlinear resistance element capacitance and the display electrode capacitance, and the capacitance ratios are different. Therefore, even if the same data signal is written, the applied voltage to each display electrode changes, and the voltage-
The transmittance characteristic becomes gentle, and the viewing angle characteristic can be improved.

【００４９】さらに、１画素を構成する複数の表示電極
と、表示電極に接続する非線形抵抗素子とは、非線形抵
抗素子の面積を一定にして、そして表示電極の面積のみ
を異なるようにする。このことで、従来例よりも容量比
の変化率を大きくすることができ、視角特性の改善効果
が大きくすることができる。Further, a plurality of display electrodes forming one pixel and a non-linear resistance element connected to the display electrode are made to have a constant area of the non-linear resistance element and different only in the area of the display electrode. As a result, the rate of change of the capacitance ratio can be made larger than that of the conventional example, and the effect of improving the viewing angle characteristics can be made larger.

【００５０】さらに、フォトエッチング工程におけるオ
ーバーエッチングやアンダーエッチングが生じても、非
線形抵抗素子の面積が同じである。このために、容量比
の変動率が少なく、常に一定の表示特性が得られる。Further, even if over-etching or under-etching occurs in the photo-etching process, the area of the non-linear resistance element remains the same. Therefore, the variation ratio of the capacity ratio is small, and a constant display characteristic can be obtained.

【００５１】さらに、第２の電極材料に表示電極と同一
材料である透明導電膜である酸化インジウムスズ膜を用
いて、Ｔａ−Ｔａ2 Ｏ5 −ＩＴＯの素子構造にする。こ
のことで、ＭＩＭ素子の駆動能力が向上し、コントラス
トを低下させずに視角特性を改善することができる。Furthermore, an indium tin oxide film, which is a transparent conductive film, which is the same material as the display electrode, is used as the second electrode material to form an element structure of Ta-Ta 2 O 5 -ITO. As a result, the driving capability of the MIM element is improved, and the viewing angle characteristics can be improved without lowering the contrast.

【００５２】[0052]

【実施例】以下に本発明の実施例における液晶表示装置
の構成を、図面を使用して説明する。The structure of a liquid crystal display device according to an embodiment of the present invention will be described below with reference to the drawings.

【００５３】図１は、本発明の第１の実施例における液
晶表示装置の構造を示す平面図である。図２は、図１の
平面図のＢ−Ｂ線における断面を示す断面図である。以
下、図１と図２とを交互に用いて本発明の第１の実施例
の液晶表示装置の構成を説明する。FIG. 1 is a plan view showing the structure of the liquid crystal display device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a cross section taken along the line BB in the plan view of FIG. Hereinafter, the configuration of the liquid crystal display device according to the first embodiment of the present invention will be described by alternately using FIG. 1 and FIG.

【００５４】第１の基板１上には、タンタル（Ｔａ）膜
からなる第１の電極２を設ける。さらにこの第１の電極
２上には、第１の電極２を陽極酸化処理して設ける酸化
タンタル（Ｔａ2 Ｏ5 ）膜からなる非線形抵抗層３を設
ける。A first electrode 2 made of a tantalum (Ta) film is provided on the first substrate 1. Further, a non-linear resistance layer 3 made of a tantalum oxide (Ta 2 O 5 ) film provided by anodizing the first electrode 2 is provided on the first electrode 2.

【００５５】さらに非線形抵抗層３上に、透明導電膜と
して酸化インジウムスズ（ＩＴＯ）膜からなる第２の電
極４を設ける。Further, a second electrode 4 made of an indium tin oxide (ITO) film is provided as a transparent conductive film on the nonlinear resistance layer 3.

【００５６】この第１の電極２と非線形抵抗層３と第２
の電極４とによって、ＭＩＭ構造の第１の非線形抵抗素
子５と第２の非線形素子７とを構成している。The first electrode 2, the non-linear resistance layer 3 and the second
The first non-linear resistance element 5 and the second non-linear element 7 of the MIM structure are constituted by the electrode 4 of the above.

【００５７】なお図１の平面図に示すように、第２の電
極４の一部領域は、第１の表示電極６と第２の表示電極
８を兼ねている。また、第１の電極２はタンタル膜から
なる駆動電極９に接続している。As shown in the plan view of FIG. 1, a partial region of the second electrode 4 serves as both the first display electrode 6 and the second display electrode 8. The first electrode 2 is connected to the drive electrode 9 made of a tantalum film.

【００５８】第１の表示電極６と第２の表示電極８との
面積は異なるように構成している。本発明の実施例にお
いては、第１の表示電極６の面積は、第２の表示電極８
よりおよそ３０％大きくなるように構成している。The areas of the first display electrode 6 and the second display electrode 8 are different from each other. In the embodiment of the present invention, the area of the first display electrode 6 is equal to the area of the second display electrode 8.
It is configured to be about 30% larger.

【００５９】さらに第２の基板１０には、第１の表示電
極６と第２の表示電極８と対向するように、酸化インジ
ウムスズ膜からなる対向電極１１を設ける。Further, a counter electrode 11 made of an indium tin oxide film is provided on the second substrate 10 so as to face the first display electrode 6 and the second display electrode 8.

【００６０】第１の表示電極６と第２の表示電極８と
は、それぞれ対向電極１１と重なり合うように配置する
ことにより、第１の表示電極６と第２の表示電極８との
２つで液晶表示装置の１画素となり、所定の表示を行
う。By arranging the first display electrode 6 and the second display electrode 8 so as to overlap with the counter electrode 11, respectively, the first display electrode 6 and the second display electrode 8 are provided. It becomes one pixel of the liquid crystal display device and performs a predetermined display.

【００６１】さらに第１の基板１と第２の基板１０と
は、液晶１３の分子を規則的に並べるための処理層とし
て、それぞれ配向膜１２、１２を設ける。さらにそのう
えスペーサー１４によって、第１の基板１と第２の基板
１０とを所定の間隔をもって対向させ、そしてこの第１
の基板１と第２の基板１０との間には、液晶１３を封入
している。Further, the first substrate 1 and the second substrate 10 are provided with alignment films 12 and 12, respectively, as processing layers for regularly aligning the molecules of the liquid crystal 13. Furthermore, the spacer 14 causes the first substrate 1 and the second substrate 10 to face each other with a predetermined distance, and
A liquid crystal 13 is sealed between the substrate 1 and the second substrate 10.

【００６２】つぎに以上説明した本発明の第１の実施例
における液晶表示装置による、動作について説明する。Next, the operation of the liquid crystal display device according to the first embodiment of the present invention described above will be described.

【００６３】本発明の第１の実施例では、４型の白黒液
晶表示装置を用いる。表示部の対角１０ｃｍで横６４０
画素×縦２４０画素、画素ピッチは横１２５μｍ×縦２
４０μｍである。In the first embodiment of the present invention, a 4-inch black and white liquid crystal display device is used. 640 horizontal by 10 cm diagonally across the display
Pixel x 240 pixels vertically, pixel pitch is 125 μm horizontally x 2 pixels vertically
It is 40 μm.

【００６４】第１の表示電極６は横６５μｍ×縦２００
μｍで、第２の表示電極８は横４５μｍ×縦２００μ
ｍ、第１の非線形抵抗素子５と第２の非線形抵抗素子７
の面積は３μｍ×３μｍ、液晶ギャップは４μｍであ
る。The first display electrode 6 is 65 μm wide × 200 vertical.
The second display electrode 8 has a width of 45 μm and a length of 200 μm.
m, the first nonlinear resistance element 5 and the second nonlinear resistance element 7
Has an area of 3 μm × 3 μm, and the liquid crystal gap is 4 μm.

【００６５】非線形抵抗層３は、約０．０７μｍと薄
く、誘電率は２５〜３０と液晶の誘電率３〜５と比較し
て５〜１０倍も大きい。このため、第１の表示電極６と
第１の非線形抵抗素子５の容量比は約４で、第２の表示
電極８と第２の非線形抵抗素子７の容量比は約３とな
る。The nonlinear resistance layer 3 is as thin as about 0.07 μm, and has a dielectric constant of 25 to 30, which is 5 to 10 times larger than the dielectric constant of 3 to 5 of the liquid crystal. Therefore, the capacitance ratio between the first display electrode 6 and the first non-linear resistance element 5 is about 4, and the capacitance ratio between the second display electrode 8 and the second non-linear resistance element 7 is about 3.

【００６６】したがって、書込時に第１の非線形抵抗素
子５に印加される電圧Ｖｍｉｍ１は４／５Ｖｉｎとな
り、第２の非線形抵抗素子７に印加される電圧Ｖｍｉｍ
２は３／４Ｖｉｎとなり、Ｖｍｉｍ２＝Ｖｍｉｍ１×１
５／１６となる。Therefore, the voltage Vmim1 applied to the first nonlinear resistance element 5 at the time of writing becomes 4/5 Vin, and the voltage Vmim applied to the second nonlinear resistance element 7.
2 becomes 3/4 Vin, and Vmim2 = Vmim1 × 1
It becomes 5/16.

【００６７】駆動電極９と対向電極１１間の印加電圧Ｖ
ｉｎとして、およそ１０Ｖ印加したとき、第１の表示電
極６と第２の表示電極８との間に約０．５Ｖの電圧差が
発生する。Applied voltage V between the drive electrode 9 and the counter electrode 11
When about 10 V is applied as in, a voltage difference of about 0.5 V is generated between the first display electrode 6 and the second display electrode 8.

【００６８】図５において、実線Ｘは容量比４の第１の
表示電極６における前方向に４０゜傾けた電圧−透過率
特性を示し、実線Ｙは容量比３の第２の表示電極８にお
ける前方向に４０゜傾けた電圧−透過率特性を示す。In FIG. 5, the solid line X represents the voltage-transmittance characteristic of the first display electrode 6 having a capacitance ratio of 4 tilted forward by 40 °, and the solid line Y represents the second display electrode 8 having a capacitance ratio of 3. It shows the voltage-transmittance characteristic inclined by 40 ° in the forward direction.

【００６９】画素の明るさは、２つの表示電極の平均と
なり、平均の電圧−透過率曲線を破線Ｚで示す。正面か
ら見て黒表示の印加電圧Ｖ１と灰色表示のＶ２を印加す
るとき、実線Ｘでは黒灰の反転が起きているが、本発明
の特性を示す破線Ｚでは、黒灰反転は発生せず、前方向
の視角特性が改善されている。The pixel brightness is the average of the two display electrodes, and the average voltage-transmittance curve is shown by the broken line Z. When the applied voltage V1 for black display and V2 for gray display are applied when viewed from the front, black grey inversion occurs in the solid line X, but black grey inversion does not occur in the broken line Z showing the characteristics of the present invention. , The viewing angle characteristics in the forward direction have been improved.

【００７０】第１の非線形抵抗素子５と第２の非線形抵
抗素子７として、Ｔａ−Ｔａ2 Ｏ5−ＩＴＯの材料を用
いているために、ＭＩＭ素子の駆動能力が高く、充分な
コントラスト特性も得ることができる。Since the material of Ta-Ta 2 O 5 -ITO is used for the first non-linear resistance element 5 and the second non-linear resistance element 7, the driving capability of the MIM element is high and sufficient contrast characteristics are obtained. Obtainable.

【００７１】本発明の第１の実施例では、さらに、第１
の非線形抵抗素子５と第２の非線形抵抗素子７の面積を
一定にして、そして第１の表示電極６と第２の表示電極
８との表示電極の面積のみを異なるように構成する。こ
のことで、従来例よりも容量比の変化率を大きくでき、
視角特性の改善効果が大きくすることができる。In the first embodiment of the present invention, the first
The areas of the non-linear resistance element 5 and the second non-linear resistance element 7 are made constant, and only the areas of the display electrodes of the first display electrode 6 and the second display electrode 8 are different from each other. This makes it possible to increase the rate of change of the capacity ratio compared to the conventional example,
The effect of improving the viewing angle characteristics can be increased.

【００７２】さらに、フォトエッチング工程におけるオ
ーバーエッチングやアンダーエッチングが生じ、非線形
抵抗素子面積が変化しても、第１の非線形抵抗素子５と
第２の非線形抵抗素子７の面積は同じである。このため
に、第１の表示電極６と第２の表示電極８の電圧差の変
化は少なく、常に一定の表示特性が得られる。Further, even if the non-linear resistance element area changes due to over-etching or under-etching in the photo-etching process, the areas of the first non-linear resistance element 5 and the second non-linear resistance element 7 are the same. For this reason, the change in voltage difference between the first display electrode 6 and the second display electrode 8 is small, and constant display characteristics can always be obtained.

【００７３】つぎに、本発明における第１の実施例の液
晶表示装置の製造方法について、図１と図２を用いて簡
単に説明する。Next, a method of manufacturing the liquid crystal display device according to the first embodiment of the present invention will be briefly described with reference to FIGS.

【００７４】第１の基板１には、アルカリ金属の含有率
の少ないガラスがよく、本発明の第１の実施例では、日
本電気硝子製の商品名ＯＡ２を用い、厚さ１．１ｍｍの
ものを使用する。The first substrate 1 is preferably made of glass having a low content of alkali metals. In the first embodiment of the present invention, a product name OA2 manufactured by Nippon Electric Glass Co., Ltd. having a thickness of 1.1 mm is used. To use.

【００７５】つぎに、第１の基板１に第１の電極２と駆
動電極９の材料として、全面に厚さ０．１〜０．３μｍ
のタンタル膜をスパッタリング法や真空蒸着法により形
成する。その後、エッチングガスとしてＳＦ6 とヘリウ
ムと酸素の混合ガスを用いたドライエッチングによりタ
ンタル薄膜をパタ−ンニングし、第１の電極２と駆動電
極９を形成する。駆動電極９の配線線幅は２０μｍで、
第１の電極２の非線形素子部線幅３μｍとする。Next, as the material of the first electrode 2 and the drive electrode 9 on the first substrate 1, the entire surface has a thickness of 0.1 to 0.3 μm.
The tantalum film is formed by a sputtering method or a vacuum evaporation method. After that, the tantalum thin film is patterned by dry etching using SF 6 and a mixed gas of helium and oxygen as an etching gas to form the first electrode 2 and the driving electrode 9. The wiring line width of the drive electrode 9 is 20 μm,
The line width of the nonlinear element portion of the first electrode 2 is 3 μm.

【００７６】つぎに、クエン酸やほう酸アンモニウムな
どの陽極酸化液を満たした陽極酸化槽に第１の基板１を
浸漬し、３０Ｖ〜５０Ｖの直流電圧を印加して、陽極酸
化処理により厚さ０．０５〜０．１μｍの酸化タンタル
（Ｔａ2 Ｏ5 ）膜からなる非線形抵抗層３を形成する。Next, the first substrate 1 is immersed in an anodizing bath filled with an anodizing solution such as citric acid or ammonium borate, and a direct current voltage of 30V to 50V is applied to the anodizing treatment to achieve a thickness of 0. A nonlinear resistance layer 3 made of a tantalum oxide (Ta 2 O 5 ) film having a thickness of 0.05 to 0.1 μm is formed.

【００７７】さらに、第２の電極４の材料と表示電極と
の材料として、全面に透明導電膜である酸化インジウム
スズ膜をスパッタリング法や真空蒸着法により厚さ０．
１から０．３μｍに設け、フォトエッチング処理によ
り、第２の電極４と第１の表示電極６と第２の表示電極
８を設ける。本発明の第１の実施例では、塩化第２鉄と
塩酸の混合溶液を用いて酸化インジウムスズ膜のエッチ
ングを行い、第２の電極４の線幅は３μｍとする。Further, as a material for the second electrode 4 and a material for the display electrode, an indium tin oxide film, which is a transparent conductive film, is formed on the entire surface by a sputtering method or a vacuum evaporation method to a thickness of 0.1.
The second electrode 4, the first display electrode 6, and the second display electrode 8 are provided by a photo etching process. In the first embodiment of the present invention, the indium tin oxide film is etched using a mixed solution of ferric chloride and hydrochloric acid, and the line width of the second electrode 4 is set to 3 μm.

【００７８】つぎに、第２の基板１０の製造方法につい
て説明する。第２の基板１０も、第１の基板１と同一の
ガラス基板を用い、対向電極１１の材料として、厚さ
０．１から０．４μｍの酸化インジウムスズ膜をスパッ
タリング法や真空蒸着法により設け、フォトエッチング
により対向電極１１を設ける。Next, a method of manufacturing the second substrate 10 will be described. The second substrate 10 is also the same glass substrate as the first substrate 1, and an indium tin oxide film having a thickness of 0.1 to 0.4 μm is provided as a material of the counter electrode 11 by a sputtering method or a vacuum evaporation method. The counter electrode 11 is provided by photo etching.

【００７９】第１の基板１と第２の基板１０の両基板に
配向膜１２を印刷法で形成後、ラビング処理を行い、ス
ペ−サ−１４を挟んで、エポキシ系接着材で両基板を所
定の間隔で張り合わせ、液晶１３を注入する。After the alignment film 12 is formed on both the first substrate 1 and the second substrate 10 by a printing method, a rubbing process is performed, and the spacer 14 is sandwiched between the two substrates by an epoxy adhesive. The liquid crystal 13 is injected by laminating at a predetermined interval.

【００８０】そして第１の基板１と第２の基板１０との
外側に偏光板を偏光軸が９０゜に交差するように張り付
けて、ノーマリー白モードのＭＩＭ方式アクティブマト
リクス液晶表示装置となる。Then, a polarizing plate is attached to the outside of the first substrate 1 and the second substrate 10 so that the polarization axes intersect each other at 90 °, and the normally white mode MIM active matrix liquid crystal display device is obtained.

【００８１】本発明の第１の実施例では、液晶１３は、
フッソ系でΔｎ＝０．１３の材料を用い、セルギャップ
は４μｍにする。In the first embodiment of the present invention, the liquid crystal 13 is
A fluorine-based material with Δn = 0.13 is used, and the cell gap is 4 μm.

【００８２】本発明の実施例における４型のＭＩＭ方式
の白黒液晶表示装置は、正面でも充分なコントラスト特
性をもち、さらに前後方向に傾けたときの視角特性が改
善され、中間階調の反転のない良好な表示品質が得られ
ている。またさらに、左右方向に傾けたときの視角特性
は、数値上では従来と変わらないが、目視時は上下視野
角の成分が含まれるので、従来より広く見える。The 4-type MIM type black and white liquid crystal display device according to the embodiment of the present invention has a sufficient contrast characteristic even on the front side, and further the viewing angle characteristic when tilted in the front-back direction is improved. Good display quality is obtained. Furthermore, the viewing angle characteristic when tilted in the left-right direction is numerically the same as that of the conventional one, but when viewed, the vertical viewing angle component is included, so that it appears wider than before.

【００８３】本発明の第１の実施例においては、好まし
くは第１の基板１の第１の非線形抵抗素子５と第２の非
線形抵抗素子７の上、あるいは第１の基板１の第１の非
線形抵抗素子５と第２の非線形抵抗素子７と第１の表示
電極６と第２の表示電極８の上に、スパッタリング法を
用いて厚さ０．１〜０．５μｍの２酸化シリコンや酸化
タンタルの絶縁膜を設ける。この絶縁膜は、第１の非線
形抵抗素子５および第２の非線形抵抗素子７と液晶１３
の相互作用を取り除く。このことで、焼き付き現象が低
減し、さらに高品質の表示画像を提供することができ
る。In the first embodiment of the present invention, it is preferable that the first non-linear resistance element 5 and the second non-linear resistance element 7 of the first substrate 1 are provided, or the first non-linear resistance element 7 of the first substrate 1 is provided. On the non-linear resistance element 5, the second non-linear resistance element 7, the first display electrode 6 and the second display electrode 8, a silicon dioxide or an oxide having a thickness of 0.1 to 0.5 μm is formed by a sputtering method. An insulating film of tantalum is provided. This insulating film is used for the first non-linear resistance element 5 and the second non-linear resistance element 7 and the liquid crystal 13.
Remove the interaction of. As a result, the image sticking phenomenon is reduced, and a display image of higher quality can be provided.

【００８４】本発明の第１の実施例では、１画素を２組
の非線形抵抗素子と表示電極で構成したが、３組以上の
非線形抵抗素子と表示電極で構成することも可能であ
る。In the first embodiment of the present invention, one pixel is composed of two sets of non-linear resistance elements and display electrodes, but it is also possible to compose three or more sets of non-linear resistance elements and display electrodes.

【００８５】つぎに、本発明の液晶表示装置における第
２の実施例を図３と図４とを用いて説明する。図４は、
本発明の第２の実施例の構成を示す断面図で、図３の平
面図のＣ−Ｃ線における断面を示している。以下、図３
と図４とを交互に用いて本発明の第２の実施例における
液晶表示装置の構成を説明する。Next, a second embodiment of the liquid crystal display device of the present invention will be described with reference to FIGS. 3 and 4. FIG.
It is sectional drawing which shows the structure of the 2nd Example of this invention, and shows the cross section in the CC line of the top view of FIG. Below, FIG.
The configuration of the liquid crystal display device according to the second embodiment of the present invention will be described by alternately using FIG.

【００８６】第１の基板１上には、タンタル（Ｔａ）膜
からなる第１の電極２を設け、さらにこの第１の電極２
上には、第１の電極２を陽極酸化処理して設ける酸化タ
ンタル（Ｔａ2 Ｏ5 ）膜からなる非線形抵抗層３を設け
る。A first electrode 2 made of a tantalum (Ta) film is provided on the first substrate 1, and the first electrode 2 is further provided.
A non-linear resistance layer 3 made of a tantalum oxide (Ta 2 O 5 ) film provided by anodizing the first electrode 2 is provided thereon.

【００８７】さらに非線形抵抗層３上に透明導電膜とし
て、酸化インジウムスズ（ＩＴＯ）膜からなる第２の電
極４を設ける。Further, a second electrode 4 made of an indium tin oxide (ITO) film is provided as a transparent conductive film on the nonlinear resistance layer 3.

【００８８】この第１の電極２と非線形抵抗層３と第２
の電極４とによって、ＭＩＭ構造の第１の非線形抵抗素
子５と第２の非線形素子７とを設ける構成としている。The first electrode 2, the non-linear resistance layer 3 and the second
The first non-linear resistance element 5 and the second non-linear element 7 having the MIM structure are provided by the electrode 4 of FIG.

【００８９】なお図３の平面図に示すように、第２の電
極４の一部領域は、第１の表示電極６と第２の表示電極
８を兼ねている。また、第１の電極２はタンタル膜から
なる駆動電極９に接続している。As shown in the plan view of FIG. 3, a partial region of the second electrode 4 serves as both the first display electrode 6 and the second display electrode 8. The first electrode 2 is connected to the drive electrode 9 made of a tantalum film.

【００９０】本発明の第２の実施例では第１の表示電極
６の面積と、第２の表示電極８の面積は同じである。し
かしながら、第１の非線形抵抗素子５を構成する第１の
電極２の線幅は３μｍ、第２の非線形抵抗素子７を構成
する第１の電極２の線幅は４μｍと第１の電極２の線幅
寸法を異なるように構成する。In the second embodiment of the present invention, the area of the first display electrode 6 and the area of the second display electrode 8 are the same. However, the line width of the first electrode 2 forming the first nonlinear resistance element 5 is 3 μm, and the line width of the first electrode 2 forming the second nonlinear resistance element 7 is 4 μm. Configure with different line width dimensions.

【００９１】さらに第２の基板１０には、クロム膜を図
３で右下がり斜線で示す形状にパターンニングして形成
するブラックマトリクス１５を設ける。さらに、表示部
上にカラーフィルター１６、１７を設ける。Further, the second substrate 10 is provided with a black matrix 15 formed by patterning a chrome film into a shape shown by a diagonal line descending to the right in FIG. Further, color filters 16 and 17 are provided on the display section.

【００９２】カラーフィルター１６、１７の上に、アク
リル系樹脂からなる絶縁膜１８を設ける。さらに第１の
表示電極６と第２の表示電極８とに対向するように、酸
化インジウムスズ膜からなる対向電極１１を設ける。An insulating film 18 made of acrylic resin is provided on the color filters 16 and 17. Further, a counter electrode 11 made of an indium tin oxide film is provided so as to face the first display electrode 6 and the second display electrode 8.

【００９３】第１の表示電極６と第２の表示電極８と
は、対向電極１１と重なり合うように配置する。このこ
とにより、第１の表示電極６と第２の表示電極８との両
方で液晶表示パネルの１画素となり、所定の表示を行
う。The first display electrode 6 and the second display electrode 8 are arranged so as to overlap the counter electrode 11. As a result, one pixel of the liquid crystal display panel is formed by both the first display electrode 6 and the second display electrode 8, and a predetermined display is performed.

【００９４】さらに第１の基板１と第２の基板１０と
は、液晶１３の分子を規則的に並べるための処理層とし
て、それぞれ配向膜１２、１２を設ける。さらにそのう
えスペーサー１４により、第１の基板１と第２の基板１
０とを所定の間隔をもって対向させる。そして、第１の
基板１と第２の基板１０との間には、液晶１３を封入し
ている。Further, the first substrate 1 and the second substrate 10 are provided with alignment films 12 and 12, respectively, as processing layers for regularly aligning the molecules of the liquid crystal 13. Furthermore, the spacer 14 allows the first substrate 1 and the second substrate 1 to be
0 and 0 are opposed to each other at a predetermined interval. Liquid crystal 13 is sealed between the first substrate 1 and the second substrate 10.

【００９５】つぎに、本発明の第２の実施例における液
晶表示装置による動作について説明する。The operation of the liquid crystal display device according to the second embodiment of the present invention will be described next.

【００９６】本発明の第２の実施例では、４型のカラー
液晶表示装置を用いる。表示部の対角１０ｃｍで横６４
０画素×縦２４０画素、画素ピッチ寸法は、横１２５μ
ｍ×縦２４０μｍである。In the second embodiment of the present invention, a 4-type color liquid crystal display device is used. The width of the display is 10 cm and the width is 64 cm.
0 pixels x 240 pixels vertically, pixel pitch size is 125μ horizontally
m × length 240 μm.

【００９７】第１の表示電極６と第２の表示電極８は、
横５５μｍ×縦２００μｍと同一であるが、第１の非線
形抵抗素子５の第１の電極２の線幅は３μｍ、第２の電
極４の線幅は３μｍで、面積は９μｍ2 、第２の非線形
抵抗素子７の第１の電極２の線幅は４μｍ、第２の電極
４の線幅は３μｍで、面積は１２μｍ2 となる。液晶ギ
ャップは４μｍである。The first display electrode 6 and the second display electrode 8 are
The width is the same as 55 μm × 200 μm in length, but the line width of the first electrode 2 of the first non-linear resistance element 5 is 3 μm, the line width of the second electrode 4 is 3 μm, and the area is 9 μm 2 . The line width of the first electrode 2 of the nonlinear resistance element 7 is 4 μm, the line width of the second electrode 4 is 3 μm, and the area is 12 μm 2 . The liquid crystal gap is 4 μm.

【００９８】非線形抵抗層３は、約０．０７μｍと薄
く、誘電率は２５〜３０と液晶の誘電率３〜５と比較し
て５〜１０倍も大きい。The nonlinear resistance layer 3 is as thin as about 0.07 μm and has a dielectric constant of 25 to 30 which is 5 to 10 times larger than the dielectric constant of 3 to 5 of the liquid crystal.

【００９９】このため、第１の表示電極６と第１の非線
形抵抗素子５の容量比は約４で、第２の表示電極８と第
２の非線形抵抗素子７の容量比は約３となる。Therefore, the capacitance ratio between the first display electrode 6 and the first non-linear resistance element 5 is about 4, and the capacitance ratio between the second display electrode 8 and the second non-linear resistance element 7 is about 3. .

【０１００】したがって、書込時に第１の非線形抵抗素
子５に印加する電圧Ｖｍｉｍ１は４／５Ｖｉｎとなり、
第２の非線形抵抗素子７に印加する電圧Ｖｍｉｍ２は３
／４Ｖｉｎとなり、Ｖｍｉｍ２＝Ｖｍｉｍ１×１５／１
６となる。Therefore, the voltage Vmim1 applied to the first nonlinear resistance element 5 at the time of writing becomes 4/5 Vin,
The voltage Vmim2 applied to the second nonlinear resistance element 7 is 3
Becomes / 4 Vin, and Vmim2 = Vmim1 × 15/1
It becomes 6.

【０１０１】駆動電極９と対向電極１１間の印加電圧Ｖ
ｉｎとして、およそ１０Ｖ印加したとき、第１の表示電
極６と第２の表示電極８との間に約０．５Ｖの電圧差が
発生する。Applied voltage V between the drive electrode 9 and the counter electrode 11
When about 10 V is applied as in, a voltage difference of about 0.5 V is generated between the first display electrode 6 and the second display electrode 8.

【０１０２】図５において、実線Ｘは容量比４の第１の
表示電極６における前方向に４０゜傾けた電圧−透過率
特性を示し、実線Ｙは容量比３の第２の表示電極８にお
ける前方向に４０゜傾けた電圧−透過率特性を示す。In FIG. 5, the solid line X represents the voltage-transmittance characteristic of the first display electrode 6 having a capacitance ratio of 4 tilted forward by 40 °, and the solid line Y represents the second display electrode 8 having a capacitance ratio of 3. It shows the voltage-transmittance characteristic inclined by 40 ° in the forward direction.

【０１０３】画素の明るさは、複数の表示電極の平均と
なり、平均の電圧−透過率曲線を破線Ｚで示す。正面か
ら見て黒表示の印加電圧Ｖ１と灰色表示のＶ２を印加す
るとき、実線Ｘでは黒灰の反転が起きているが、本発明
の特性を示す破線Ｚでは、黒灰反転はおきず、前方向の
視角特性が改善している。The brightness of a pixel is the average of a plurality of display electrodes, and the average voltage-transmittance curve is shown by a broken line Z. When applying the applied voltage V1 for black display and V2 for gray display as viewed from the front, black grey inversion occurs in the solid line X, but in the broken line Z showing the characteristics of the present invention, black grey inversion does not occur, The viewing angle characteristics in the forward direction are improved.

【０１０４】第１の非線形抵抗素子５と第２の非線形抵
抗素子７として、Ｔａ−Ｔａ2 Ｏ5−ＩＴＯの材料を用
いているために、ＭＩＭ素子の駆動能力が高く、充分な
コントラスト特性も得ることができる。Since the material of Ta-Ta 2 O 5 -ITO is used for the first nonlinear resistance element 5 and the second nonlinear resistance element 7, the driving ability of the MIM element is high and sufficient contrast characteristics are obtained. Obtainable.

【０１０５】さらに、第１の表示電極６と第２の表示電
極８の面積を一定にして、第１の非線形抵抗素子７と第
２の非線形抵抗素子７の面積のみを異なるように構成し
ている。このことで、従来例よりも容量比の変化率を大
きくでき、視角特性の改善効果が大きくすることができ
る。Further, the areas of the first display electrode 6 and the second display electrode 8 are made constant, and only the areas of the first nonlinear resistance element 7 and the second nonlinear resistance element 7 are different. There is. As a result, the rate of change of the capacitance ratio can be made larger than that of the conventional example, and the effect of improving the viewing angle characteristics can be made larger.

【０１０６】さらに、表示電極形成工程におけるオーバ
ーエッチングやアンダーエッチングが生じ、表示電極面
積が変化しても、第１の表示電極６と第２の表示電極８
の面積が同じである。このために、第１の表示電極６と
第２の表示電極８の電圧差の変化は少なく、常に一定の
表示特性が得られる。Further, even if the display electrode area changes due to over-etching or under-etching in the display electrode forming step, the first display electrode 6 and the second display electrode 8 are formed.
Have the same area. For this reason, the change in voltage difference between the first display electrode 6 and the second display electrode 8 is small, and constant display characteristics can always be obtained.

【０１０７】非線形抵抗素子形成工程におけるオーバー
エッチングやアンダーエッチングが生じ、非線形抵抗面
積が変化しても、従来例よりも第１の非線形抵抗素子５
と第２の非線形抵抗素子７の面積差が少ない。このた
め、第１の表示電極６と第２の表示電極８の電圧差の変
化は少なくなり、一定の表示特性が得られる。Even if the non-linear resistance area changes due to over-etching or under-etching in the process of forming the non-linear resistance element, the first non-linear resistance element 5 is provided more than the conventional example.
And the area difference between the second non-linear resistance element 7 is small. Therefore, the change in the voltage difference between the first display electrode 6 and the second display electrode 8 is reduced, and a constant display characteristic can be obtained.

【０１０８】つぎに、本発明における第２の実施例の液
晶表示装置の製造方法について、図３と図４を用いて簡
単に説明する。Next, a method of manufacturing the liquid crystal display device according to the second embodiment of the present invention will be briefly described with reference to FIGS.

【０１０９】第１の基板１には、アルカリ金属の含有率
の少ないガラスがよく、本発明の第２の実施例では、日
本電気硝子製の商品名ＯＡ２を用い、厚さ１．１ｍｍの
ものを使用する。The first substrate 1 is preferably made of glass having a low content of alkali metal. In the second embodiment of the present invention, a product name OA2 manufactured by Nippon Electric Glass Co., Ltd. having a thickness of 1.1 mm is used. To use.

【０１１０】つぎに、第１の基板１に、第１の電極２と
駆動電極９の材料として、全面に厚さ０．１〜０．３μ
ｍのタンタル膜をスパッタリング法や真空蒸着法により
設ける。その後、エッチングガスとしてＳＦ6 とヘリウ
ムと酸素の混合ガスを用いたドライエッチングにより、
タンタル膜をパタ−ンニングして、第１の電極２と駆動
電極９とを設ける。ここで駆動電極９の配線線幅は２０
μｍで、第１の非線形抵抗素子５の第１の電極２の線幅
は３μｍで、第２の非線形抵抗素子７の第１の電極２の
線幅は４μｍである。Next, on the first substrate 1, as a material of the first electrode 2 and the driving electrode 9, a thickness of 0.1 to 0.3 μm is formed on the entire surface.
A tantalum film of m is provided by a sputtering method or a vacuum evaporation method. After that, by dry etching using a mixed gas of SF 6 , helium and oxygen as an etching gas,
The tantalum film is patterned to provide the first electrode 2 and the drive electrode 9. Here, the wiring line width of the drive electrode 9 is 20
μm, the line width of the first electrode 2 of the first nonlinear resistance element 5 is 3 μm, and the line width of the first electrode 2 of the second nonlinear resistance element 7 is 4 μm.

【０１１１】つぎに、クエン酸やほう酸アンモニウムな
どの陽極酸化液を満たした陽極酸化槽に第１の基板１を
浸漬し、３０Ｖ〜５０Ｖの直流電圧を印加して、陽極酸
化処理により厚さ０．０５〜０．１μｍの酸化タンタル
（Ｔａ2 Ｏ5 ）膜からなる非線形抵抗層３を設ける。Next, the first substrate 1 is immersed in an anodizing tank filled with an anodizing solution such as citric acid or ammonium borate, and a direct current voltage of 30V to 50V is applied to the anodizing treatment to achieve a thickness of 0. A non-linear resistance layer 3 made of a tantalum oxide (Ta 2 O 5 ) film having a thickness of 0.05 to 0.1 μm is provided.

【０１１２】さらに、第２の電極４の材料と表示電極の
材料として、全面に透明導電膜である酸化インジウムス
ズ膜をスパッタリング法や真空蒸着法により厚さ０．１
から０．３μｍに設ける。そして、フォトエッチング処
理によって、第２の電極４と第１の表示電極６と第２の
表示電極８を設ける。本発明の実施例では、塩化第２鉄
と塩酸の混合溶液を用いてエッチングを行う。なお、第
２の電極４の線幅は３μｍとする。Further, as a material for the second electrode 4 and a material for the display electrode, an indium tin oxide film which is a transparent conductive film is formed on the entire surface to a thickness of 0.1 by a sputtering method or a vacuum evaporation method.
To 0.3 μm. Then, the second electrode 4, the first display electrode 6, and the second display electrode 8 are provided by photoetching. In the example of the present invention, etching is performed using a mixed solution of ferric chloride and hydrochloric acid. The line width of the second electrode 4 is 3 μm.

【０１１３】つぎに、第２の基板６の製造方法について
説明する。第２の基板１０も、第１の基板１と同一のガ
ラス基板を用い、その全面に厚さ０．１〜０．２μｍの
クロム膜をスパッタリング法や真空蒸着法で形成する。
その後、硝酸セリウムアンモニウムと過塩素酸の混合溶
液を用いてクロム膜をフォトエッチングして、ブラック
マトリクス１５とする。Next, a method of manufacturing the second substrate 6 will be described. The second substrate 10 is also the same glass substrate as the first substrate 1, and a chromium film having a thickness of 0.1 to 0.2 μm is formed on the entire surface by sputtering or vacuum evaporation.
Then, the chromium film is photoetched using a mixed solution of cerium ammonium nitrate and perchloric acid to form the black matrix 15.

【０１１４】その後、全面に回転塗布法を用いて、ゼラ
チンやカゼインなどの感光性有機材料を形成する。そし
て、乾燥処理後、フォトエッチングを行い、第２の基板
１０を染色槽に含浸して染色し、固着槽に含浸して固着
することにより、厚さ１μｍの緑のカラ−フィルタ−１
６を設ける。この工程を３回繰り返し、青のカラ−フィ
ルタ−１７と赤のカラ−フィルタ−（図示せず）とを設
ける。Then, a photosensitive organic material such as gelatin or casein is formed on the entire surface by spin coating. Then, after the drying treatment, photoetching is performed to impregnate the second substrate 10 into the dyeing tank for dyeing, and to impregnate the fixing tank by impregnating the second substrate 10 to fix the green color filter-1 having a thickness of 1 μm.
6 is provided. This process is repeated 3 times to provide a blue color filter 17 and a red color filter (not shown).

【０１１５】カラ−フィルタ−１６，１７上に、絶縁膜
１８の材料として、回転塗布法を用いて、アクリル系の
有機材料を形成後、温度１５０〜２００゜Ｃの熱処理を
行って、有機材料を硬化させて、厚さ２〜５μｍの絶縁
膜１８を設ける。After the acrylic organic material is formed on the color filters 16 and 17 as the material of the insulating film 18 by the spin coating method, the organic material is heat-treated at a temperature of 150 to 200 ° C. Is cured to form an insulating film 18 having a thickness of 2 to 5 μm.

【０１１６】つぎに、対向電極１１の材料として、厚さ
０．２〜０．４μｍの酸化インジウムスズ膜を低温スパ
ッタリング法により設け、フォトエッチングにより対向
電極１１を設ける。Next, as a material for the counter electrode 11, an indium tin oxide film having a thickness of 0.2 to 0.4 μm is provided by the low temperature sputtering method, and the counter electrode 11 is provided by photoetching.

【０１１７】第１の基板１と第２の基板１０との両基板
に配向膜１２を印刷法で形成後、ラビング処理を行い、
スペ−サ−１４を挟んで、エポキシ系接着材で両基板を
所定の間隔で張り合わせ、液晶１３を注入する。After the alignment film 12 is formed on both the first substrate 1 and the second substrate 10 by a printing method, a rubbing process is performed.
Both substrates are bonded at a predetermined interval with an epoxy adhesive sandwiching the spacer 14, and the liquid crystal 13 is injected.

【０１１８】両基板の外側に偏光板を偏光軸が９０゜に
交差するように張り付けて、ノーマリー白モードのＭＩ
Ｍ方式アクティブマトリクス液晶表示装置となる。Polarizing plates were attached to the outside of both substrates so that the polarization axes crossed 90 °, and the MI of normally white mode was set.
It becomes an M type active matrix liquid crystal display device.

【０１１９】本発明の実施例では、液晶１３は、フッソ
系でΔｎ＝０．１３の材料を用い、セルギャップは４μ
ｍにする。In the embodiment of the present invention, the liquid crystal 13 is made of a fluorine-based material with Δn = 0.13 and has a cell gap of 4 μm.
to m.

【０１２０】本発明の第２の実施例の４型のＭＩＭ方式
カラー液晶表示装置は、正面でも充分なコントラスト特
性をもち、さらに、前後方向に傾けたときの視角特性を
改善することができ、中間階調の反転のない良好な表示
品質が得られる。また、左右方向に傾けたときの視角特
性は、数値上では従来と変わらないが、目視時は上下視
野角の成分が含まれるので、従来より広く見える。The 4-type MIM type color liquid crystal display device of the second embodiment of the present invention has a sufficient contrast characteristic even on the front side, and can further improve the viewing angle characteristic when tilted in the front-back direction. It is possible to obtain good display quality without inversion of halftone. Further, the viewing angle characteristic when tilted in the left-right direction is the same as that of the conventional one in terms of numerical values, but when viewed, the component of the vertical viewing angle is included, so that it looks wider than before.

【０１２１】本発明の第２の実施例では、好ましくは第
１の基板１の第１の非線形抵抗素子５と第２の非線形抵
抗素子７の上、あるいは第１の基板１の第１の非線形抵
抗素子５と第２の非線形抵抗素子７と第１の表示電極６
と第２の表示電極８の上に、スパッタリング法を用いて
厚さ０．１から０．５μｍの２酸化シリコンや酸化タン
タルの絶縁膜を設ける。この絶縁膜は、第１の非線形抵
抗素子５と第２の非線形抵抗素子７と液晶１３の相互作
用を取り除く役割をもつ。このことで、焼き付き現象が
低減し、さらに高品質の表示画像を提供することができ
る。In the second embodiment of the present invention, it is preferable that the first non-linear resistance element 5 and the second non-linear resistance element 7 of the first substrate 1 are provided, or the first non-linear resistance element of the first substrate 1 is made. Resistance element 5, second nonlinear resistance element 7, and first display electrode 6
An insulating film of silicon dioxide or tantalum oxide having a thickness of 0.1 to 0.5 μm is provided on the second display electrode 8 by the sputtering method. This insulating film has a role of removing the interaction between the first nonlinear resistance element 5, the second nonlinear resistance element 7 and the liquid crystal 13. As a result, the image sticking phenomenon is reduced, and a display image of higher quality can be provided.

【０１２２】本発明の第２の実施例では、１画素を２組
の非線形抵抗素子と表示電極で構成したが、３組以上の
非線形抵抗素子と表示電極で構成することも可能であ
る。In the second embodiment of the present invention, one pixel is composed of two sets of nonlinear resistance elements and display electrodes, but it is also possible to form three pixels or more of non-linear resistance elements and display electrodes.

【０１２３】本発明の第２の実施例では、第１の非線形
抵抗素子５と第２の非線形抵抗素子７で、第２の電極４
の線幅は３μｍと同一にして、第１の電極２の線幅を３
μｍと４μｍとに変化させたが、第１の電極２の線幅寸
法は３μｍと同一にして、第２の電極４の線幅寸法を３
μｍと４μｍに変化させても、まったく同一の効果が得
られる。In the second embodiment of the present invention, the first non-linear resistance element 5 and the second non-linear resistance element 7 are used to form the second electrode 4.
And the line width of the first electrode 2 is 3 μm.
Although the line width of the first electrode 2 is changed to 3 μm, the line width of the second electrode 4 is changed to 3 μm.
Even if the thickness is changed to μm and 4 μm, the same effect can be obtained.

【０１２４】また、第１の非線形抵抗素子５と第２の非
線形抵抗素子７で、第１の電極２の線幅と第２の電極４
の線幅との両方を変化させることも可能である。第１の
電極２と第２の電極４との両電極の線幅を変えることに
より、第１の非線形抵抗素子５と第２の非線形抵抗素子
７の面積を大きく変化させることが可能となる。Further, in the first nonlinear resistance element 5 and the second nonlinear resistance element 7, the line width of the first electrode 2 and the second electrode 4 are
It is also possible to change both the line width and the line width. By changing the line widths of both the first electrode 2 and the second electrode 4, the areas of the first nonlinear resistance element 5 and the second nonlinear resistance element 7 can be greatly changed.

【０１２５】また、第１の表示電極６と第２の表示電極
８の面積を変え、しかも第１の非線形抵抗素子５と第２
の非線形抵抗素子７との面積を変えることも可能であ
る。このとき、第１の表示電極６の面積を第２の表示電
極８より大きくし、第１の非線形抵抗素子５の面積は第
２の非線形抵抗素子７より小さくする。Further, the areas of the first display electrode 6 and the second display electrode 8 are changed, and the first nonlinear resistance element 5 and the second display electrode 8 are changed.
It is also possible to change the area with the non-linear resistance element 7. At this time, the area of the first display electrode 6 is made larger than that of the second display electrode 8, and the area of the first nonlinear resistance element 5 is made smaller than that of the second nonlinear resistance element 7.

【０１２６】本発明の液晶表示装置は従来例よりも、容
量比を大きく変えることができるようになり、第１の表
示電極６と第２の表示電極８との電圧差を大きくするこ
とができるようになる。In the liquid crystal display device of the present invention, the capacitance ratio can be changed more than in the conventional example, and the voltage difference between the first display electrode 6 and the second display electrode 8 can be increased. Like

【０１２７】さらに、従来例と同一の容量比差であれ
ば、第１の表示電極６と第２の表示電極８との面積差、
および第１の非線形抵抗素子５と第２の非線形抵抗素子
７との面積差を小さくできる。このため、フォトエッチ
ング工程におけるオーバーエッチングやアンダーエッチ
ングが生じても、第１の表示電極６と第２の表示電極８
の電圧差の変動は少なく、一定の表示特性を得られる。Further, if the capacitance ratio difference is the same as that of the conventional example, the area difference between the first display electrode 6 and the second display electrode 8,
Further, the area difference between the first nonlinear resistance element 5 and the second nonlinear resistance element 7 can be reduced. Therefore, even if over-etching or under-etching in the photo-etching process occurs, the first display electrode 6 and the second display electrode 8
There is little fluctuation in the voltage difference of, and constant display characteristics can be obtained.

【０１２８】[0128]

【発明の効果】以上の説明で明らかなように、本発明の
液晶表示装置の構成を用いることにより、充分な正面の
コントラストもちながら、かつ前後方向の視角特性が改
善し、中間調表示の反転も起きにくく、しかも高コント
ラスト広視角特性のＭＩＭ方式の液晶表示装置を提供す
ることができる。As is apparent from the above description, by using the configuration of the liquid crystal display device of the present invention, the viewing angle characteristics in the front-rear direction are improved while the front contrast is improved, and the halftone display is reversed. It is possible to provide a MIM type liquid crystal display device which is hard to occur and has a high contrast wide viewing angle characteristic.

【０１２９】さらに、フォトエッチング工程でのオーバ
ーエッチングやアンダーエッチングがあっても、複数の
表示電極の駆動電圧差があまり変化せず、常に一定の表
示特性が得られ、安定した表示特性の液晶表示装置を提
供できる。Furthermore, even if there is over-etching or under-etching in the photo-etching process, the driving voltage difference between the plurality of display electrodes does not change so much that constant display characteristics are always obtained, and a liquid crystal display with stable display characteristics is obtained. A device can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の第１の実施例における液晶表示装置を
示す平面図である。FIG. 1 is a plan view showing a liquid crystal display device according to a first embodiment of the present invention.

【図２】本発明の第１の実施例における液晶表示装置を
示す断面図である。FIG. 2 is a sectional view showing a liquid crystal display device according to a first embodiment of the present invention.

【図３】本発明の第２の実施例における液晶表示装置を
示す平面図である。FIG. 3 is a plan view showing a liquid crystal display device according to a second embodiment of the present invention.

【図４】本発明の第２の実施例における液晶表示装置を
示す断面図である。FIG. 4 is a sectional view showing a liquid crystal display device in a second embodiment of the present invention.

【図５】液晶表示装置を前方向に４０゜傾けときの印加
電圧と透過率との関係を示すグラフである。FIG. 5 is a graph showing the relationship between applied voltage and transmittance when the liquid crystal display device is tilted forward by 40 °.

【図６】従来例における液晶表示装置を示す平面図であ
る。FIG. 6 is a plan view showing a liquid crystal display device in a conventional example.

【図７】従来例における液晶表示装置を示す断面図であ
る。FIG. 7 is a cross-sectional view showing a liquid crystal display device in a conventional example.

【図８】液晶表示装置の前後方向の視角特性を説明する
ための印加電圧と透過率との関係を示すグラフである。FIG. 8 is a graph showing the relationship between applied voltage and transmittance for explaining the viewing angle characteristics of the liquid crystal display device in the front-rear direction.

【図９】従来例における液晶表示装置を示す平面図であ
る。FIG. 9 is a plan view showing a liquid crystal display device in a conventional example.

【符号の説明】[Explanation of symbols]

１ 第１の基板 ２ 第１の電極 ３ 非線形抵抗層 ４ 第２の電極 ５ 第１の非線形抵抗素子 ６ 第１の表示電極 ７ 第２の非線形抵抗素子 ８ 第２の表示電極 ９ 駆動電極 １０ 第２の基板 １１ 対向電極 １２ 配向膜 １３ 液晶 1 1st board 2 1st electrode 3 Non-linear resistance layer 4 2nd electrode 5 1st non-linear resistance element 6 1st display electrode 7 2nd non-linear resistance element 8 2nd display electrode 9 Drive electrode 10th 2 substrate 11 counter electrode 12 alignment film 13 liquid crystal

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 第１の電極と非線形抵抗層と第２の電極
とからなる非線形抵抗素子と表示電極と駆動電極とを有
する第１の基板と、対向電極を有する第２の基板と、第
１の基板と第２の基板との間に封入する液晶とを備え、 １画素を１つの対向電極と複数の表示電極と各表示電極
に接続する非線形抵抗素子とで構成し、そしてそれぞれ
の非線形抵抗素子の面積は同一で、かつ表示電極の面積
が異なるように構成し、非線形抵抗素子と表示電極との
容量比が異なることを特徴とする液晶表示装置。1. A first substrate having a non-linear resistance element including a first electrode, a non-linear resistance layer and a second electrode, a display electrode and a drive electrode, a second substrate having a counter electrode, and A liquid crystal to be sealed between a first substrate and a second substrate; one pixel is composed of one counter electrode, a plurality of display electrodes and a non-linear resistance element connected to each of the display electrodes, and each non-linear A liquid crystal display device, wherein the resistance elements have the same area and the display electrodes have different areas, and the capacitance ratio between the non-linear resistance element and the display electrode is different. 【請求項２】 第１の電極と非線形抵抗層と第２の電極
とからなる非線形抵抗素子と表示電極と駆動電極とを有
する第１の基板と、対向電極を有する第２の基板と、第
１の基板と第２の基板との間に封入する液晶とを備え、 １画素を１つの対向電極と複数の表示電極と各表示電極
に接続する非線形抵抗素子とで構成し、そしてそれぞれ
の表示電極の面積は同一で、かつ非線形抵抗素子の面積
が異なるように構成し、非線形抵抗素子と表示電極との
容量比が異なることを特徴とする液晶表示装置。2. A first substrate having a non-linear resistance element including a first electrode, a non-linear resistance layer and a second electrode, a display electrode and a drive electrode, a second substrate having a counter electrode, A liquid crystal to be sealed between a first substrate and a second substrate, and one pixel is composed of one counter electrode, a plurality of display electrodes and a non-linear resistance element connected to each display electrode, and each display A liquid crystal display device, characterized in that the areas of the electrodes are the same, the areas of the non-linear resistance elements are different, and the capacitance ratios of the non-linear resistance elements and the display electrodes are different. 【請求項３】 第１の電極と非線形抵抗層と第２の電極
とからなる非線形抵抗素子と表示電極と駆動電極を有す
る第１の基板と、対向電極を有する第２の基板と、第１
の基板と第２の基板との間に封入する液晶とを備え、 １画素を１つの対向電極と複数の大きさの異なる表示電
極と各表示電極に接続する複数の大きさの異なる非線形
抵抗素子とで構成し、そして面積の大きな表示電極には
面積の小さい非線形抵抗素子を接続し、面積の小さな表
示電極には面積の大きな非線形抵抗素子を接続し、非線
形抵抗素子と表示電極との容量比が異なることを特徴と
する液晶表示装置。3. A first substrate having a non-linear resistance element including a first electrode, a non-linear resistance layer and a second electrode, a display electrode and a drive electrode, a second substrate having a counter electrode, and a first substrate.
And a liquid crystal sealed between the second substrate and a second substrate, and a plurality of different size non-linear resistance elements for connecting one pixel to one counter electrode, a plurality of display electrodes of different sizes, and each display electrode. And a non-linear resistance element with a small area is connected to the display electrode with a large area, a non-linear resistance element with a large area is connected to the display electrode with a small area, and the capacitance ratio between the non-linear resistance element and the display electrode is Liquid crystal display device characterized by different. 【請求項４】 第１の基板に設ける第２の電極は、表示
電極と同一材料である透明導電膜で構成することを特徴
とする請求項１、請求項２、あるいは請求項３に記載の
液晶表示装置。4. The second electrode provided on the first substrate is made of a transparent conductive film made of the same material as that of the display electrode, according to claim 1, 2, or 3. Liquid crystal display device. 【請求項５】 第１の基板の非線形抵抗素子の上、ある
いは第１の基板の非線形抵抗素子と表示電極上とには、
絶縁膜を備えることを特徴とする請求項１、請求項２、
請求項３、あるいは請求項４に記載の液晶表示装置。5. The non-linear resistance element of the first substrate, or the non-linear resistance element of the first substrate and the display electrode,
An insulating film is provided, Claim 1, Claim 2,
The liquid crystal display device according to claim 3 or 4.
JP15336394A 1994-07-05 1994-07-05 Liquid crystal display Expired - Fee Related JP3291396B2 (en)

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Application Number Priority Date Filing Date Title
JP15336394A JP3291396B2 (en) 1994-07-05 1994-07-05 Liquid crystal display

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JPH0822033A true JPH0822033A (en) 1996-01-23
JP3291396B2 JP3291396B2 (en) 2002-06-10

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08328043A (en) * 1995-02-01 1996-12-13 Seiko Epson Corp Liquid crystal display device
WO2001048546A1 (en) * 1999-12-24 2001-07-05 Matsushita Electric Industrial Co., Ltd. Liquid crystal device
WO2005040906A1 (en) * 2003-10-29 2005-05-06 Samsung Electronics Co., Ltd. Thin film diode panel for trans-reflectective liquid crystal display
WO2005040904A1 (en) * 2003-10-29 2005-05-06 Samsung Electronics Co., Ltd. Liquid crystal display of using dual select diode
JP2005338853A (en) * 2004-05-28 2005-12-08 Quanta Display Inc Liquid crystal display device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7986296B2 (en) 2004-05-24 2011-07-26 Au Optronics Corporation Liquid crystal display and its driving method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08328043A (en) * 1995-02-01 1996-12-13 Seiko Epson Corp Liquid crystal display device
WO2001048546A1 (en) * 1999-12-24 2001-07-05 Matsushita Electric Industrial Co., Ltd. Liquid crystal device
US6914644B2 (en) 1999-12-24 2005-07-05 Matsushita Electric Industrial Co., Ltd. Liquid crystal device
WO2005040906A1 (en) * 2003-10-29 2005-05-06 Samsung Electronics Co., Ltd. Thin film diode panel for trans-reflectective liquid crystal display
WO2005040904A1 (en) * 2003-10-29 2005-05-06 Samsung Electronics Co., Ltd. Liquid crystal display of using dual select diode
KR100925471B1 (en) * 2003-10-29 2009-11-06 삼성전자주식회사 Thin film diode panel for trans-reflect liquid crystal display
JP2005338853A (en) * 2004-05-28 2005-12-08 Quanta Display Inc Liquid crystal display device
JP4563253B2 (en) * 2004-05-28 2010-10-13 友達光電股▲ふん▼有限公司 Liquid crystal display

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