JPH0821776A - Semiconductor differential pressure sensor - Google Patents
Semiconductor differential pressure sensorInfo
- Publication number
- JPH0821776A JPH0821776A JP15566294A JP15566294A JPH0821776A JP H0821776 A JPH0821776 A JP H0821776A JP 15566294 A JP15566294 A JP 15566294A JP 15566294 A JP15566294 A JP 15566294A JP H0821776 A JPH0821776 A JP H0821776A
- Authority
- JP
- Japan
- Prior art keywords
- gauge
- package
- detecting
- semiconductor
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は検出圧力として気体と液
体の差圧を測定する車両用半導体式差圧センサに係り、
万一液体高圧力検出用ゲージのダイヤフラムが破壊して
もゲージパッケージ外に流出させないための半導体式差
圧センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vehicle semiconductor type differential pressure sensor for measuring a differential pressure between a gas and a liquid as a detected pressure,
The present invention relates to a semiconductor-type differential pressure sensor that prevents the gauge of a liquid high pressure detection gauge from flowing out of the gauge package even if it breaks.
【0002】[0002]
【従来の技術】従来の半導体式差圧センサは、実公昭58
−3081号公報に示すようにゲージチップが2ケ同一キャ
ンパッケージに収納されていたため、液体高圧力検出用
ゲージのダイヤフラムが破壊した場合、検出液体(ガソ
リン,オイル等)が流出して車両火災等の問題があっ
た。2. Description of the Related Art A conventional semiconductor type differential pressure sensor has
As shown in Japanese Patent No.-3081, two gauge chips were stored in the same can package. Therefore, when the diaphragm of the gauge for liquid high pressure detection is broken, the detected liquid (gasoline, oil, etc.) leaks and vehicle fire occurs. There was a problem.
【0003】[0003]
【発明が解決しようとする課題】本発明の目的は、液体
高圧力検出用ゲージのダイヤフラムが破壊した場合で
も、検出液体(ガソリン,オイル等)をゲージパッケー
ジ外に流出させない半導体式差圧センサを供給すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor differential pressure sensor which does not allow the detection liquid (gasoline, oil, etc.) to flow out of the gauge package even if the diaphragm of the liquid high pressure detection gauge is broken. To supply.
【0004】[0004]
【課題を解決するための手段】本発明は、液体高圧力検
出用ゲージをキャンパッケージに収納し、かつ、気体低
圧力検出用ゲージをプラスチックパッケージに収納する
ようにした。According to the present invention, a liquid high pressure detecting gauge is housed in a can package, and a gas low pressure detecting gauge is housed in a plastic package.
【0005】[0005]
【作用】液体高圧力検出用ゲージパッケージをキャンパ
ッケージにすることにより、液体高圧力検出用ゲージの
ダイヤフラムが破壊した場合でも、ゲージパッケージ外
に流出しない。また、気体低圧力検出用ゲージは、プラ
スチックパッケージとするためキャンパッケージよりも
安価に出来る。By using the can package as the liquid high pressure detecting gauge package, even if the diaphragm of the liquid high pressure detecting gauge is broken, it does not flow out of the gauge package. Further, since the gas low pressure detecting gauge is a plastic package, it can be made less expensive than a can package.
【0006】[0006]
【実施例】本発明による半導体式差圧センサの実施例を
図1と図2で説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor type differential pressure sensor according to the present invention will be described with reference to FIGS.
【0007】図1に示すようにマニホールド圧等の気体
圧を測定する気体低圧力検出用ゲージIは半導体基板1
の表面に例えば4ケの拡散抵抗を有し、導体パターンで
ブリッジに配線し、かつ、ゲージ微小電圧を増幅するた
めの回路基板と接続するための接続パッドを有する。前
記半導体基板1の裏面を薄肉ダイヤフラム形状に加工
し、ガラス台(又は、シリコン台)2に接合し、リード
フレーム3を有するプラスチックパッケージ4内に接着
固定する。前記リードフレーム3間と前記半導体基板1
の表面に設けたワイヤボンディングパッド間を線材5で
接続する。その後、導体パターン保護のため、充填材6
をコーティングし、更に、プラスチックキャップ7を接
着固定する。As shown in FIG. 1, a gas low pressure detecting gauge I for measuring a gas pressure such as a manifold pressure is a semiconductor substrate 1
Has a diffusion resistance of, for example, four on its surface, is connected to a bridge by a conductor pattern, and has a connection pad for connection with a circuit board for amplifying a gauge minute voltage. The back surface of the semiconductor substrate 1 is processed into a thin diaphragm shape, bonded to a glass table (or silicon table) 2, and fixed in a plastic package 4 having a lead frame 3 by adhesion. Between the lead frames 3 and the semiconductor substrate 1
Wires 5 connect between the wire bonding pads provided on the surface of the. Then, to protect the conductor pattern, the filler 6
And the plastic cap 7 is adhesively fixed.
【0008】一方、ガソリン,オイル等の液体高圧検出
用ゲージIIは、半導体基板1の表面に拡散抵抗を有し、
導体パターンでブリッジに配線し、かつ、ゲージ微小電
圧を増幅するための回路基板と接続するための接続パッ
ドを有することは前記ゲージIと同じである。前記半導
体材料基板1の裏面を薄肉ダイヤフラム形状に加工す
る。ガラス台(又は、シリコン台)2に接合する。その
後パイプ8とリードピン9を有する金属ステム10へ低
融点ガラス(又は接着剤,はんだ等)で接合する。前記
リードピン9と前記接続パッド間を線材5で接続する。
更に、金属キャップ11を溶接する。ゲージIとゲージ
IIの電気信号は増幅回路を形成した基板へ接続し、ゲー
ジIとゲージIIの電位差を差動増幅器12で処理してセ
ンサ出力とする。On the other hand, the gauge II for high pressure detection of liquids such as gasoline and oil has a diffusion resistance on the surface of the semiconductor substrate 1,
The gauge I is the same as the gauge I described above in that it is wired to the bridge with a conductor pattern and has a connection pad for connecting with a circuit board for amplifying the gauge minute voltage. The back surface of the semiconductor material substrate 1 is processed into a thin diaphragm shape. It is bonded to a glass table (or a silicon table) 2. After that, the pipe 8 and the metal stem 10 having the lead pin 9 are joined with a low melting point glass (or an adhesive, solder, etc.). Wires 5 connect the lead pins 9 and the connection pads.
Further, the metal cap 11 is welded. Gauge I and gauge
The electric signal of II is connected to the substrate on which the amplification circuit is formed, and the potential difference between the gauge I and the gauge II is processed by the differential amplifier 12 to be the sensor output.
【0009】図2で具体的な半導体式圧力センサの構造
を説明する。A specific structure of the semiconductor pressure sensor will be described with reference to FIG.
【0010】プラスチックで成形したハウジング13へ
気体低圧力検出用ゲージ14を接着固定し、更に液体高
圧力検出用ゲージ15のパイプ8にOリング16を組付
け物を前記ハウジング13ヘネジ17で固定する。ま
た、差動増幅器12を有する混成集積回路18も前記ハ
ウジング13へ接着固定後、前記気体低圧力検出用ゲー
ジ14と液体高圧力検出用ゲージ15とセンサ入出力用
端子からの線材5を混成集積回路18上のウエルディン
グパッドへ接続する。そして、特性調整後、充填材6を
注入硬化し、最後に前記ハウジング13へカバー19を
接着固定する。A gas low pressure detecting gauge 14 is adhered and fixed to a housing 13 formed of plastic, and an O-ring 16 is attached to a pipe 8 of a liquid high pressure detecting gauge 15 and an assembly is fixed with a screw 17 of the housing 13. . Also, a hybrid integrated circuit 18 having a differential amplifier 12 is also bonded and fixed to the housing 13, and then the gas low pressure detecting gauge 14, the liquid high pressure detecting gauge 15 and the wire 5 from the sensor input / output terminals are hybrid integrated. Connect to Welding Pad on Circuit 18. Then, after the characteristic adjustment, the filling material 6 is injected and cured, and finally the cover 19 is adhesively fixed to the housing 13.
【0011】[0011]
【発明の効果】本発明によれば、液体高圧力検出用ゲー
ジが破壊しても検出液体(ガソリン,オイル等)をゲー
ジパッケージ外に流出させない安全に考慮した半導体式
差圧センサが供給出来る。According to the present invention, it is possible to supply a semiconductor type differential pressure sensor in which the detection liquid (gasoline, oil, etc.) does not flow out of the gauge package even if the gauge for liquid high pressure detection is broken.
【図1】本発明実施例の半導体圧力センサの構成図であ
る。FIG. 1 is a configuration diagram of a semiconductor pressure sensor according to an embodiment of the present invention.
【図2】本発明実施例の半導体圧力センサの断面図であ
る。FIG. 2 is a sectional view of a semiconductor pressure sensor according to an embodiment of the present invention.
1…半導体基板、2…ガラス台、3…リードフレーム、
4…プラスチックパッケージ、5…線材、6…充填材、
7…プラスチックキャップ、8…パイプ、9…リードピ
ン、10…金属ステム、11…金属キャップ、12…差
動増幅器、13…ハウジング、14…気体低圧力検出用
ゲージ、15…液体高圧力検出用ゲージ、16…Oリン
グ、17…ネジ、18…混成集積回路、19…カバー。1 ... Semiconductor substrate, 2 ... Glass base, 3 ... Lead frame,
4 ... plastic package, 5 ... wire rod, 6 ... filling material,
7 ... Plastic cap, 8 ... Pipe, 9 ... Lead pin, 10 ... Metal stem, 11 ... Metal cap, 12 ... Differential amplifier, 13 ... Housing, 14 ... Gas low pressure detection gauge, 15 ... Liquid high pressure detection gauge , 16 ... O-ring, 17 ... Screw, 18 ... Hybrid integrated circuit, 19 ... Cover.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 真市 茨城県勝田市大字高場字鹿島谷津2477番地 3 日立オートモティブエンジニアリング 株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Makoto Yamaguchi 2477, Kashima Yatsu Kashima, Katsuta City, Ibaraki Pref. 3 Hitachi Automotive Engineering Co., Ltd.
Claims (1)
抗を有し、導体パターンでブリッジに配線され、かつ、
ゲージ微小電圧を増幅するための回路基板と接続するた
めの接続パッドを有し、更に前記半導体基板の裏面を薄
肉ダイヤフラム形状に加工したゲージを使用して低気体
圧力を検出するためのゲージと液体高圧力を検出するた
めのゲージを少なくとも各1ケ具備し、前記ゲージ出力
電圧を差動増幅器で増幅し、センサ出力電圧とする半導
体式差圧センサにおいて、前記気体低圧力検出用ゲージ
をプラスチックパッケージに収納し、液体高圧力検出用
ゲージをキャンパッケージに収納したことを特徴とする
半導体式差圧センサ。1. A semiconductor substrate having at least two diffusion resistors on the surface thereof, which is wired to a bridge with a conductor pattern, and
Gauge and a liquid for detecting a low gas pressure using a gauge having a connection pad for connecting to a circuit board for amplifying a minute voltage, and further using a gauge in which the back surface of the semiconductor substrate is processed into a thin diaphragm shape. In a semiconductor differential pressure sensor having at least one gauge for detecting high pressure, amplifying the gauge output voltage with a differential amplifier, and using it as a sensor output voltage, the gas low pressure detecting gauge is a plastic package. The semiconductor differential pressure sensor is characterized in that the high liquid pressure detection gauge is housed in a can package.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15566294A JPH0821776A (en) | 1994-07-07 | 1994-07-07 | Semiconductor differential pressure sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15566294A JPH0821776A (en) | 1994-07-07 | 1994-07-07 | Semiconductor differential pressure sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0821776A true JPH0821776A (en) | 1996-01-23 |
Family
ID=15610856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15566294A Pending JPH0821776A (en) | 1994-07-07 | 1994-07-07 | Semiconductor differential pressure sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0821776A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011511291A (en) * | 2008-02-01 | 2011-04-07 | カスタム センサーズ アンド テクノロジーズ インコーポレイテッド | Integrated cavity in PCB pressure sensor |
US8357443B2 (en) | 2007-03-01 | 2013-01-22 | Ajinomoto Co., Inc. | Laminate including water soluble release layer for producing circuit board and method of producing circuit board |
-
1994
- 1994-07-07 JP JP15566294A patent/JPH0821776A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8357443B2 (en) | 2007-03-01 | 2013-01-22 | Ajinomoto Co., Inc. | Laminate including water soluble release layer for producing circuit board and method of producing circuit board |
JP2011511291A (en) * | 2008-02-01 | 2011-04-07 | カスタム センサーズ アンド テクノロジーズ インコーポレイテッド | Integrated cavity in PCB pressure sensor |
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