JPH0821543B2 - Manufacturing method of functionally deposited film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial field of application> The present invention relates to a functional film, particularly an amorphous or polycrystalline so-called non-single-crystal functional deposited film useful for applications such as semiconductor devices. Manufacturing method.

<Prior art> Vacuum deposition method, plasma CVD method, thermal C
The VD method, the optical CVD method, the reactive sputtering method, the ion plating method, and the like have been tried, and in general, the plasma CVD method is widely used and commercialized.

However, since the deposited film obtained by these deposited film forming methods is required to be applied to electronic devices that are required to have higher functions, electrical and optical characteristics and fatigue characteristics in repeated use are required. Alternatively, there is room for improvement in overall characteristics in terms of use environment characteristics, productivity, mass productivity including uniformity and reproducibility.

By the way, the reaction process in forming a deposited film by the plasma CVD method, which has been generalized in the past, is considerably more complicated than the conventional so-called thermal CVD method, and the reaction mechanism is not unclear. There wasn't. In addition, there are many parameters for forming the deposited film (eg, substrate temperature, flow rate and ratio of introduced gas, forming pressure, high-frequency power, electrode structure, reaction vessel structure, exhaust rate, plasma generation method, etc.). Due to the combination of the above parameters, the plasma sometimes became unstable, and the deposited film formed was adversely affected. In addition, it was difficult to generalize the manufacturing conditions because the parameters peculiar to the device had to be selected for each device.

Among them, for example, as an amorphous silicon film,
At present, the plasma CVD method is considered to be the best in terms of being able to develop the electrical and optical characteristics that can sufficiently satisfy each application.

However, depending on the application of the deposited film, it may be necessary to sufficiently satisfy the requirements for large area, film thickness uniformity, and film quality uniformity for mass production with reproducibility.
In forming a deposited film by the method, a large amount of capital investment is required for mass production equipment, the management items for mass production are complicated, the management allowance is narrow, and the adjustment of equipment is delicate, These are pointed out as problems to be improved in the future.

Furthermore, depending on the type of deposited film, the plasma CVD method is not always suitable, and in addition, the effect of plasma damage to the film, which is a drawback of the plasma CVD method, appears in the required film characteristics and does not fulfill the desired function. It will be. Particularly in the production of deposited films for high-performance electronic devices, the above-mentioned influence of plasma damage must be avoided as much as possible in order to directly appear in the film characteristics.

On the other hand, in the conventional technique by the ordinary CVD method, a high temperature is required, and a deposited film having satisfactory characteristics at a company level has not been obtained.

These problems to be solved are especially
This is a concern when creating a functionally deposited film composed of Group II to Group VI elements.

As described above, in forming a functional film, it has been earnestly desired to develop a forming method which can be mass-produced by a low-cost apparatus while maintaining its practicable characteristics and uniformity.

<Purpose> The present invention eliminates the above-mentioned drawbacks of the conventional deposited film forming method, particularly the plasma CVD method, and at the same time provides a novel deposited film forming method which does not depend on the conventional forming method.

It is an object of the present invention to easily manage the characteristics of a functional film, maintain at least the characteristics of a good quality film obtained by a conventional method, and improve the deposition rate while simplifying the management of film forming conditions. It is an object of the present invention to provide a method for forming a deposited film that can easily achieve mass production of a film.

<Structure> The method for manufacturing a functionally deposited film according to the present invention includes a film forming space (c)
H ₂ introduced through the transportation space (a) that connects to
Of the activated species and (C ₂ H ₅ ) ₂ Zn and H ₂ S introduced through the transport space (b) provided in the transport space (a) and communicating with the film formation space (c). And 5: 1 ~
Introduced into the film formation space (c) at a flow rate ratio of 1: 500, 1 × 10
^{-2 to} 5 × 10 ³ Pa and 50 to 1 placed in the film forming space (c)
It is characterized in that a deposited film is formed on a substrate kept at 000 ° C.

<Detailed Description of the Invention> In the present invention, the active species is introduced into the film-forming space through the transport space (a), and the compound (A) and the compound (B) are introduced through the transport space (b). However, by appropriately changing the open position of the transport space (b) in the transport space (a), the residence time of the compound (A) and the compound (B) in the transport space (a) can be appropriately set. Can be done.

In this case, the transport rate of the compound (A) and the compound (B) in the transport space (b) can also be selected as one of the control parameters for controlling the residence time.

In the present invention, the open position of the transport space (a) and the transport space (b) to the film formation space requires active species and / or at least one of the compound (A) and the compound (B). When excited accordingly, it is appropriately determined according to the lifetime of the compound (A) in the excited state or the compound (B) in the excited state.

In the case of the present invention, the compound (A) and the compound (B) are generally transported to the film formation space in the ground state,
Since many of the active species used have a relatively short life, the open position of the transport space (a) to the film forming space is preferably close to the film forming space.

The opening of the transport space (a) to the film formation space and the opening of the transport space (b) to the transport space (a) are preferably nozzle-shaped or orifice-shaped. Especially when it is in the shape of a nozzle, by positioning it near the film-forming surface of the substrate arranged in the film-forming space of the nozzle opening,
The film forming efficiency and the material consumption effective efficiency can be significantly increased.

In the present invention, the active species are generated in the activation space that communicates with the transport space (a) at the upstream thereof, and either the compound (A) or the compound (B) may be transported in the transport space (b) if necessary. ) Is excited in the excitation space that communicates with its upstream,
The present invention is not limited to these, and for example, the transport space (a) can also serve as the activation space and the transport space (b) can also serve as the excitation space.

In particular, when both transport spaces also serve as the activation space and the excitation space, respectively, it is possible to use the same means without separately providing the activation means and the excitation means.

For example, the transport space (a) and the transport space (b) have a double glass tube structure, and by providing an RF plasma device or a microwave plasma device around the outer glass tube, the transport space (a) and the transport space (b) are provided at the same position in the transport direction. The active species and the compound (A) in the excited state and the compound (B) can be simultaneously produced.

In the present invention, the transportation space (a) and the transportation space (b)
It is preferable that the opening is located inside the film formation space.

The transportation space (b) is divided so that the compound (A) and the compound (B) are separated and independently transported depending on the types of the compounds (A) and (B) used.

In the present invention, the number of the double space structure including the transport space (a) and the transport space (b) provided inside the transport space (a) is not limited to one in the film forming apparatus. By providing a plurality of active species, the kinds of the compound (A) and the compound (B) to be introduced into the respective double space structures, the deposited films having different characteristics are arranged in the film formation space. Can be formed on each of the existing substrates.

Furthermore, according to the method of the present invention, conventional plasma CVD
Unlike the method, since the film formation space, the activation space, and the excitation space that is provided as necessary are separated, the effects of contaminants from the inner wall of the film formation space and residual gas remaining in the film formation space Has the characteristic that it can be virtually eliminated.

In addition, the "active species" in the present invention refers to a chemical interaction with at least one of the compound (A) and the compound (B) to give energy to the compound (A) and the compound (B), for example. , A compound which chemically reacts with at least one of the compound (A) and the compound (B) to bring the compound (A) or the compound (B) into a state capable of forming a deposited film. say. Therefore, the active species may or may not include a component that constitutes the deposited film to be formed.

Compounds (A) and (B) represented by the general formulas (A) and (B), respectively, used in the present invention
In the space where the substrate to be formed is present, a chemical species that causes a molecular reaction with the active species to cause a chemical reaction and contributes to the formation of a deposited film formed on the substrate is It is more desirable to select one that spontaneously occurs, but in a normal existence state, when it is inactive with the active species or does not have such activity, the compound ( The compounds (A) and (B) are deposited on A) and (B) with an excitation energy strong enough not to completely dissociate the "M" and "A" in the general formulas (A) and (B). It is necessary to give the compounds (A) and (B) to an excited state capable of chemically reacting with the active species before or at the time of film formation, and a compound capable of making such an excited state is a method of the present invention. Used as one of the compounds (A) and (B) used in.

In the present invention, a compound in which the compound (A) or the compound (B) is in the excited state is hereinafter referred to as "excited species (A) or excited species (B)". .

In the present invention, in the case where the compound (A) or the compound (B) is excited in advance to generate the compound (A) or the compound (B) in an excited state as needed, a transport space introduced into the film formation space It is desirable that the compound (A) and the compound (B) in the excited state from (b) have a long life, preferably 0.01 seconds or more, more preferably 0.1 seconds or more, most preferably 1 second or more. However, in any case, they are selected and used as desired, and the constituent elements of the compound (A) and the compound (B) respectively constitute the main components constituting the deposited film formed in the film formation space.

The active species is introduced into the film formation space from the transportation space (b) at the same time when the deposited film is formed in the film formation space, and the compound (A) and the compound (A) containing the constituent elements that are the main constituents of the formed deposited film It chemically interacts with at least one of (B). As a result, a desired deposited film is easily formed on a desired substrate. According to the method of the present invention, the deposited film formed without generating plasma in the film formation space is not adversely affected by etching action or other action such as abnormal discharge action. Further, according to the present invention, a more stable CVD method can be realized by arbitrarily controlling the atmospheric temperature of the film forming space and the substrate temperature as desired.

One of the points that the method of the present invention is different from the conventional CVD method is that the active species previously activated in the space "activation space (d)" different from the film formation space is used. As a result, the deposition rate can be dramatically increased compared to the conventional CVD method, and at the same time a high quality film can be obtained.
In addition, it is possible to further lower the substrate temperature when forming the deposited film, and it is possible to industrially provide a large amount of the deposited film with stable film quality at low cost.

In the present invention, the active species generated in the activation space (d) are not only generated by energy of discharge, light, heat or the like or by a combination thereof, but also by contact with a catalyst or addition thereof. May be done.

In the present invention, as the compound (A) RnMm and the compound (B) AaBa represented by the general formulas (A) and (B),
The following compounds can be mentioned as those effectively used.

That is, an element belonging to Group II of the periodic table as "M", specifically an element belonging to Group II B of Zn, Cd, Hg,
A compound having an element belonging to Group VI of the periodic table as "A", specifically, an element belonging to Group VI B of O, S, Se, Te is referred to as Compounds (A) and (B), respectively. I can name it.

“R” and “B” are monovalent, divalent and trivalent hydrocarbon groups derived from linear and side chain saturated hydrocarbons or unsaturated hydrocarbons, or saturated or unsaturated The monovalent, divalent and trivalent hydrocarbon groups derived from monocyclic and polycyclic hydrocarbons can be mentioned.

As the unsaturated hydrocarbon group, not only a single type of carbon-carbon bond but also a single type bond, a double bond, and a triple bond have at least two types of bonds. Can be effectively adopted if they are different in achieving the purpose of.

In the case of an unsaturated hydrocarbon group having a plurality of double bonds,
It may be a non-integrated double bond or an integrated double bond.

As the acyclic hydrocarbon group, an alkyl group, an alkenyl group, an alkynyl group, an alkylidene group, an alkenylidene group, an alkynylidene group, an alkyridine group, an alkenyridin group, an alkynylidine group and the like can be mentioned as preferable ones. Preferably 1-10,
More preferably, the number of carbon atoms is 1 to 7, and most preferably, the number of carbon atoms is 1 to 5.

In the present invention, compounds (A) and (B) that are effectively used are selected such that they are gaseous in a standard state or can be easily vaporized under the use environment. "R" and "M" and "A" and "B" listed above
In selecting, and "R" and "M" as desired.
And a combination of "A" and "B" is selected.

In the present invention, specific examples that are effectively used as the compound (A) include ZnMe ₃ , CdMe ₃ , ZnEt ₃ , CdEt ₃ and the like, which are effectively used as the compound (B). Me ₂ O, Me ₂ S, Me ₂ Se, Me ₂ Te, Et ₂ O, Et ₂ S, Et ₂ Se,
Et ₂ Te, X ₂ O, SX ₂ , SX ₄ , SX ₆ , SeX ₂ , SeX ₄ , SeX ₆ , TeX ₆ H ₂ O, H ₂ S, H
₂ Se, H ₂ Te, etc. can be mentioned.

In the above, X represents halogen (F, Cl, Br, I), Me represents a methyl group, and Et represents an ethyl group.

The life of the active species used in the present invention is preferably short considering the reactivity with the compound (A) or / and (B),
Considering the ease of handling during film formation and transportation to the film formation space, the longer the length, the better. Further, the life of the active species depends on the internal pressure of the film forming space.

Therefore, the active species used are selected and determined so that the functional film having the desired characteristics can be effectively obtained in consideration of the production efficiency.
An active species having an appropriate life span is appropriately selected and used.

The active species used in the present invention is a compound (A) or / and (B) in which an active species having a lifetime appropriately selected in view of the above points is specifically used.
It is appropriately selected from within the compatible range of the chemical affinity with, but preferably, its life is 1 × 10 ⁻⁴ seconds or more, more preferably under the environment of the compatible range of the present invention. Is 1 × 10 ⁻³ seconds or more, and optimally 1 × 10 ⁻² seconds or more.

The active species used in the present invention may have a minimum function as a so-called initiator (initiater) when chemical reactions with the compound (A) and the compound (B) occur in a chain. Therefore, as the introduction amount to be introduced into the film forming space, it is sufficient to secure an amount such that chemical reactions efficiently occur in a chain.

The active species used in the present invention are introduced into the film formation space (c) at the same time when the deposited film is formed in the film formation space (c), and the active ingredient used as a main constituent component of the formed deposited film is It chemically interacts with the compound (A) and the compound (B) or / and the excited species (A) of the compound (A) or the excited species (B) of the compound (B). As a result, a II-VI group compound deposited film having a desired functionality can be easily formed on a desired substrate.

According to the present invention, a more stable CVD method can be achieved by controlling the atmosphere temperature and the substrate temperature of the film forming space (c) as desired.

In the present invention, the raw material that is introduced into the activation space (d) to generate the active species is preferably a substance that is in a gaseous state or easily vaporized and that generates a hydrogen radical. Specifically, H ₂ , D ₂ , HD and the like can be mentioned, and other rare gases such as He and Ar can also be mentioned.

Active species are generated by applying activation energy such as heat, light, and discharge in the activation space (d) to the above. This active species is introduced into the film forming space (c). At this time, it is necessary that the lifetime of the active species is desirably 1 × 10 ⁻⁴ seconds or more, and by having such a lifetime, the deposition efficiency and the deposition rate are accelerated, and the film formation space (c) is formed. It increases the efficiency of the chemical reaction with the introduced compound (A) and compound (B).

In the activation space (d), the activation energy for activating the active species generating substance is, specifically, thermal energy by resistance heating, infrared heating, laser light, mercury lamp light, halogen lamp light, etc. Can be mentioned as light energy, electric energy using electric discharge of microwave, RF, low frequency, DC, etc., and these activation energies are the active species producing substances alone in the active space (d). They may be caused to act, or two or more types may be used in combination. The compound (A), the compound (B) and the active species introduced into the film formation space (c) cause a chemical reaction due to mutual collision at the molecular level even as they are to deposit a functional film on a desired substrate. The compounds that can be selected from the above-listed ones can be selected depending on the selection method of the compound (A), the compound (B) and the active species, or In the case where the chemical reaction is performed more effectively and the deposited film is efficiently formed on the substrate, the compound (A), the compound (B) or / and the active species are added in the film formation space (c). It does not matter if the reaction promoting energy that acts, for example, the activation energy used in the above-mentioned activation space (d) is used. Alternatively, the compound (A) or the compound (B) is brought into the above-mentioned excited state in the other activation space (e) before being introduced into the film formation space (c). Therefore, excitation energy may be applied.

In the present invention, the ratio of the total amount of the compound (A) and the compound (B) introduced into the film formation space (c) to the amount of the active species introduced from the activation space (d) is determined by the deposition conditions, the compound ( A), the type of active species, the characteristics of functional film formation, etc. are appropriately determined according to the desire, but in the present invention, 1000: 1 to 1:10 (introduction flow rate ratio) is suitable, and more preferably 500: 1 to 1 :Five
(Note: The ratio of the amount of active species that activated H ₂ to the ratio of the amounts of (C ₂ H ₅ ) ₂ Zn and H ₂ S, which are compound (A) and compound (B), is 5 -1 to 1: 500 (introduction flow rate ratio) is desirable.

When the active species does not cause a chain chemical reaction with the compound (A) or the compound (B), the ratio of the introduced amount is preferably 10: 1 to 1:10, more preferably 4: 1 to. It is desirable to be 2: 3.

The internal pressure of the film formation space (c) during film formation is appropriately determined according to the selected type of compound (A), compound (B) and active species, deposition conditions, etc., but is preferably 1 ×.
10 ^{−2 to} 5 × 10 ³ Pa, more preferably 5 × 10 ⁻² to 1 × 10 ³ Pa,
Optimally, 1 × 10 ^{-1 to} 5 × 10 ² Pa is desirable.
When it is necessary to heat the substrate during film formation, the substrate temperature is preferably 50 to 1000 ° C, more preferably
100 to 900 ° C, optimally 100 to 750 ° C is desirable.

In the present invention, the substrate used for film formation may be either conductive or electrically insulating. As the conductive substrate, for example, NiCr, stainless steel, Al, Cr, Mo, Au, Ir, N
Examples thereof include metals such as b, Ta, V, Ti, Pt and Pd, and alloys thereof.

As the electrically insulating substrate, a film or sheet of synthetic resin such as polyester, polyethylene, polycarbonate, cerose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene or polyamide, glass, ceramic, paper or the like is usually used. . It is preferable that at least one surface of these electrically insulating substrates is subjected to a conductive treatment, and another layer is provided on the surface side subjected to the conductive treatment.

For example, in the case of glass, the surface is NiCr, Al, Cr, Mo, A
u, Ir, Nb, Ta, V, Ti, Pt, Pd, In ₂ O ₃ , SnO ₂ , ITO (In ₂ O ₃ + Sn
O ₂ ), etc., is treated for conductivity by providing a thin film, or if it is a synthetic resin film such as polyester film,
NiCr, Al, Ag, Pd, Zn, Ni, Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc. are processed by vacuum evaporation, electron beam evaporation, sputtering, etc., or the metal And the surface is subjected to a conductive treatment. The shape of the substrate may be any shape such as a cylindrical shape, a belt shape, or a plate shape, and the shape is determined as desired.

In addition to these, it is also possible to use a semiconductor substrate such as Si, Ge, GaAs, SOS or the above-mentioned substrate on which another functional film has already been formed.

When introducing the compound (A), the compound (B) and the active species into the film forming space (c), the introduction method may be through a transport pipe connected to the film forming space (c). Alternatively, the transport pipe may be extended to near the deposition surface of the substrate installed in the deposition space (c), and the tip may be introduced in the form of a nozzle, and the transport pipe may be doubled. The circular tube conveys one, the outer tube conveys the other, for example, the inner pipe conveys the active species, and the outer pipe conveys the compound (A) and the compound (B), respectively, into the film formation space (c). May be introduced.

Also, prepare two nozzles connected to the transport pipe,
The tips of the two nozzles are arranged near the surface of the substrate already installed in the film-forming space (c), and the compound (A) and the compound (A) discharged from the respective nozzles near the surface of the substrate ( You may introduce so that B) and active species may be mixed. In this case, a functional film can be selectively formed on the substrate, which is convenient because patterning can be performed simultaneously with film formation.

In the present invention, the position of the opening of the transportation space (b) into the transportation space (a) is preferably 0.1 mm to 200 mm, more preferably the position of the opening of the transportation space (a) into the film formation space. It is desirable that the inner diameter is 1 mm to 100 mm.

Next, the present invention will be described with reference to typical examples of semiconductor members formed by the deposited film manufacturing method of the present invention.

FIG. 1 is a diagram for explaining a configuration example of a typical semiconductor member obtained by the present invention.

The semiconductor member shown in FIG. 1 has a layer structure composed of a semiconductor layer 102 and a gap type electrode 103 on a support 101 for the semiconductor member. In the following description, the case where the semiconductor layer 102 is formed by the method of the present invention will be described.

The support 101 needs to be electrically insulating. The semiconductor layer 102 is configured so as to have photoconductive characteristics that allow the semiconductor layer 102 to sufficiently exhibit its function as a photoconductive semiconductor member.

The semiconductor layer 102 is formed by first forming H _{2 in the} activation space (d).
A raw material gas for producing active species such as is introduced, and active species are produced by the action of predetermined activation energy, and introduced into the film formation space via the transport space (a).

On the other hand, for example, the compound (A) and the compound (B), which are raw materials of a semiconductor material such as (C ₂ H ₅ ) ₂ Zn, H ₂ Se, etc., can be introduced through the transport space (b) on the downstream side from the opening position. When mixed with the active species of, the chemical interaction occurs.

A mixed gas containing the compound (A), the compound (B), and the active species is introduced into the film formation space, and the semiconductor layer 102 is formed on the base body which is previously arranged in the film formation space.

Example 1 Using the apparatus shown in FIG. 2, a semiconductor layer was formed on a flat substrate by the following operations, and then a pair of electrodes was formed on the semiconductor layer.

In FIG. 2, 201 is a film forming chamber (c), 202 is an activation chamber (e), 203 and 204 are walls for introducing activation energy and source gas for active species, and 205 is a compound for forming a deposited film. Gas discharge pipes of (A) and compound (B), 206 is a microwave power source as an activation energy source, 207 is a glass substrate for forming a deposited film, 208 is a heater for heating a substrate, 209 is an electric wire for a heater, 210 Is a substrate holder, 211 is a gas introduction pipe for the compound (A) and the compound (B), 212 is a pipe for introducing a raw material gas to be an active species, and 213 is a space from the activation chamber (e) 202 to the film formation chamber ( c) A nozzle for introducing active species and a mixed gas of compound (A) and compound (B) into 201.

In the present embodiment, the position of the tip of the raw material gas introduction pipe 205 was set to be about 5 cm from the nozzle 213.

Put Al ₂ O ₃ substrate 207 in advance in film forming chamber (c) 201,
An exhaust valve (not shown) was opened, and the film forming chamber (c) and the activation chamber (e) were set to a vacuum degree of about 10 ⁻⁵ torr. Next, the substrate temperature was maintained at about 300 ° C. by the heater 208. Next, in the activation chamber (B) 202, H ₂ gas 50S is used as a raw material gas for active species generation.
CCM was introduced through the gas introduction pipe 212. Separately, (C ₂ H ₅ ) ₂ Zn and H ₂ S bubbled with He gas were used as a raw material gas for electrode formation in the activation chamber (e) 202 at 10 mmol / min.
Introduced at the rate of each. After the flow rate was stabilized, the exhaust valve was adjusted to set the internal pressure of the film forming chamber (c) to 0.002 toor. After the internal pressure becomes constant, operate the microwave power supply 206,
Discharge energy of 280 W was input to the activation chamber (e) 202.

This state was kept for 1.5 hours, and a ZnS film of about 2.2 μm was deposited on the Al ₂ O ₃ substrate 207 in the film forming chamber (c) 201. Comb-shaped Al electrodes with a gap length of 2.5 cm and a gap distance of 0.2 mm were formed on the ZnS film thus formed by ordinary patterning. A voltage was applied between the electrodes of the sample thus prepared, and the ratio of the currents flowing was still 2 × 10 ^3.5 , which was not changed even after 72 hours of continuous light irradiation.

Reference Example 1 In Example 1, the source gas shown in Table 1 was used as the compound (A) and the compound (B) instead of (C ₂ H ₅ ) ₂ Zn, H ₂ S, and the introduction amount was 1 mmol. The film was formed in substantially the same manner as in Example 1 except that the condition was set to / min and the conditions described in Table 1 were applied, whereby the thin film shown in Table 1 was formed.

Electrical and optical film characteristics of these thin films were evaluated, and it was confirmed that all of them were uniform thin films and were uniform and of high quality.

Reference Example 2 In Example 1, the RF installed around the nozzle 213
A plasma atmosphere was formed in the nozzle 213 by applying a power of 3 W at a high frequency of 13.56 MHz in a discharge device (not shown). In this case, the substrate 207 was placed at a position about 1 cm downstream of the plasma atmosphere so as not to directly touch the plasma atmosphere. A ZnS film having a thickness of about 2.4 μm could be formed within 1 hour after the start of film formation. At this time, the substrate temperature was kept at 100 ° C. Except for the above, the same procedure as in Example 1 was carried out.

When a sample provided with this ZnS film was evaluated in the same manner as in Example 1, it was confirmed that good device characteristics were exhibited.

The ZnS film was mechanically excellent without peeling from the substrate.

〔The invention's effect〕

According to the deposited film forming method of the present invention, desired electrical, optical, photoconductive and mechanical properties of a formed film are improved, and reproducibility in film formation is improved. The quality can be improved and the film quality can be made uniform, and it is advantageous for increasing the area of the film, and the productivity of the film and the mass production can be easily achieved.

Further, since it is possible to form a film at a low temperature, it is possible to form a film even on a substrate having poor heat resistance, and it is possible to shorten the process by the low temperature treatment.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a layer structure for explaining one embodiment example of a photoconductive member produced by using the method of the present invention. FIG. 2 is a schematic explanatory view showing an example of an apparatus for embodying the manufacturing method of the present invention. 201 ... Film forming chamber (c), 202 ... Activation chamber (e), 203,204 ... Activation energy introduction wall and active species source gas discharge wall, 205 ... Gas discharge pipe, 206 ... Microwave power source , 207 ... substrate, 208 ... heating heater, 209 ... heater wire, 210 ... substrate holder, 211 ... gas introduction pipe, 212 ... gas introduction pipe, 213 ... nozzle.

Claims (2)

[Claims] 1. An active species that has activated H ₂ and is introduced through a transport space (a) communicating with the film formation space (c) on the downstream side,
(C ₂ H ₅ ) ₂ Zn introduced through the transportation space (b) provided in the transportation space (a) and communicating with the film formation space (c)
And H ₂ S are introduced into the film forming space (c) at a flow rate ratio of 5: 1 to 1: 500, respectively, to make 1 × 10 ^{−2 to} 5 × 10 ³ Pa, and in the film forming space (c). A method for producing a functional deposited film, which comprises forming a deposited film on a substrate placed at and maintained at 50 to 1000 ° C. 2. The transportation space (a) is an activation space (d).
The method for producing a functional deposited film according to claim 1, wherein the method also serves.