JPH08213442A - Multi-chamber processing device - Google Patents

Abstract

PURPOSE: To heighten throughput to the utmost, to prevent the deviation of process condition and wafer contamination by dust and to perform uniform and clean process. CONSTITUTION: It comprise a process chamber 3 that is equipped with a process device 1 that perform specific process and an elevating mechanism 2 for changing the position of the process device 1, a transfer chamber 5 that is equipped with a wafer transfer mechanism 4 that transfers wafers to other process chamber 3 and a buffer chamber 8 that is connected with the process chamber 3 and the transfer chamber 5 through gate valves 6a and 6b and equipped with a wafer transfer mechanism 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chamber process apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, semiconductor manufacturing equipment tends to be more costly due to higher density and complicated structure of ULSI, and efficient manufacturing due to shortening of manufacturing time and reduction of equipment cost and increase of wafer diameter. Since it is suppressed by processing or the like, continuous processing of a single wafer by a multi-chamber process device has come to be frequently used. This is a CVD (Chemical Vapor Depositio) using a conventional multi-chamber process equipment.
n), sputter, plasma etching, RTP (Rapid
This is because it has been confirmed that it is effective in improving the processing quality and shortening the processing time by continuously performing a plurality of processes such as thermal processing) in a clean atmosphere isolated from the atmosphere (for example, , "Electronic Materials"
(March 1994 issue 33-36).

As shown in FIG. 5, the basic construction of a conventional multi-chamber process apparatus is such that a plurality of process chambers 1 for carrying out different processes are provided around a polygonal transfer chamber 102 in which a wafer transfer mechanism 101 is installed.
03 are connected via the gate valve 104, respectively. Here, as shown in FIG. 2A, the pressure state of the process chamber 103 in the conventional method prevents mutual contamination between the process chambers when the process is completed and the wafer is replaced. To this end, the process chamber is evacuated to at least the vacuum pressure P0 of the transfer chamber 102. Further, the wafer transfer mechanism 10
After exchanging the wafer by 1, the gate valve 104 is shut off and the process gas is supplied to a predetermined pressure P1 to restart the process. Wafers are continuously processed while performing this for each process.

[0004]

However, in the conventional multi-chamber process apparatus, as shown in FIG. 2 (a), air supply and exhaust time are required within the operating time of the process chamber. The actual process time is shortened accordingly. Further, a change in the atmosphere of the process chamber leads to a change in the process conditions, which causes a variation in quality among the processed wafers. In addition, intermittent air supply,
The gas flow caused by the exhaust also causes the dust generated in the process chamber to contaminate the wafer.

[0005]

As a means for solving the above-mentioned problems, the present invention provides a wafer transfer mechanism between a transfer chamber and a plurality of process chambers, a vacuum evacuation and One or more buffer chambers having a process gas supply function are installed. Then, atmosphere conversion for matching the atmosphere in the buffer chamber with the atmosphere of the transfer destination of the wafer, further, preheating and precooling of the wafer,
Alternatively, a means for cleaning the wafer surface using a chemical reaction in the buffer chamber was taken.

[0006]

The atmosphere of the process chamber is maintained constant, and all the operating time except the wafer transfer time can be used as the actual process time.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the basic structure of a semiconductor manufacturing apparatus according to the present invention. The semiconductor manufacturing apparatus according to the present invention,
1, a process chamber 3 in which a process apparatus 1 for performing a predetermined process and a vertical mechanism 2 for changing the position of the process apparatus 1 are installed, and a wafer transfer mechanism for transferring a wafer to another process chamber. 4, a transfer chamber 5 in which a wafer transfer mechanism 7 is installed, a buffer chamber 8 in which a wafer transfer mechanism 7 is installed between the process chamber 3 and the transfer chamber 5 through gate valves 6a and 6b, respectively, and a transfer chamber. 5 and the gate valve 8, and is basically configured by a stocker chamber 10 in which a wafer stocker 9 is installed.

Next, a wafer processing method will be described. Unprocessed wafers 14 stored in the wafer stocker 9
First, the wafer transfer mechanism 4 is used to
Be transported to. At this time, the buffer chamber 8 is evacuated to the same vacuum pressure as that of the transfer chamber 5 in advance. After the unprocessed wafer 14 is transferred to the wafer transfer mechanism 7, the gate valve 6b is closed. This time, the process gas is supplied to the buffer chamber 8 so as to have the same atmosphere as the atmosphere inside the process chamber 3 during the process, and the same pressure is set. Then, the gate valve 6a is opened to transfer the unprocessed wafer 14 to the process apparatus 1 by the wafer transfer mechanism 7, and the gate valve 6a is closed to start the process.

During this process, the buffer chamber 8 immediately receives the next unprocessed wafer, so that the buffer chamber 8 is evacuated to the same vacuum pressure as the transfer chamber 5, and the next unprocessed wafer 14 is transferred by the above procedure. Then, the atmosphere is set again to the same atmosphere as the inside of the process chamber 3 during the process.

The processed wafer 15 whose process has been completed is discharged to the buffer chamber 12 in which the same atmosphere as the inside of the process chamber 3 is set beforehand by the vertical movement mechanism 2 and the wafer transfer mechanism 13, and immediately thereafter. The unprocessed wafer 14 is transferred to the process apparatus 1 by the up-and-down mechanism 2 and the wafer transfer mechanism 7, and the process is restarted.

Further, the processed wafer 15 in the buffer chamber 12 is evacuated to the same vacuum pressure as the transfer chamber 5 and then the wafer transfer mechanism 13 and the wafer transfer mechanism 4 are used to move the processed wafer 15 to another process chamber or stocker. It is transported to the chamber 10.

Here, the wafer transfer mechanisms 7 and 13 need only have the function of reciprocating in one axis, and for example, a simple two- or three-stage slide type mechanism can sufficiently perform the function. Therefore, the volume of the buffer chambers 8 and 12 is almost the volume occupied by the wafer transfer mechanisms 7 and 13, and no extra space is required. Therefore, the supply and exhaust of the buffer chambers 8 and 12 are as short as several seconds or less. Can be done in time.

FIG. 2 compares the pressure state (a) of the conventional process chamber with the pressure state (b) of the process chamber of the present invention. As shown in FIG. 2, in the conventional method, as described above, each time a processing wafer is discharged, an evacuation time for achieving the same vacuum pressure as that of the transfer chamber and a process gas for restarting the process are set. Air supply time is required. This not only increases the processing time for each wafer, but also causes fluctuations in the atmosphere of the process chamber to cause fluctuations in process conditions, which causes variations in quality among the processed wafers. Furthermore, the dust and gas generated in the process chamber may contaminate the wafer due to the gas flow caused by intermittent air supply and exhaust. On the other hand, the pressure state of the process chamber of the method according to the present invention is such that by using the buffer chamber, by continuously processing under the state of a constant process pressure except for the wafer transfer time of about several seconds,
It is possible to shorten the time for one cycle and maximize the throughput. Further, it is possible to prevent the wafer from being contaminated by the fluctuation of the process conditions and the dust, and to carry out a homogeneous and clean process.

As an application example of this basic processing method, the following method is also possible. For example, when the process time is shorter than the sum of the air supply time and the exhaust time of the buffer chamber, two buffer chambers are installed as described above, or a plurality of buffer chambers are installed, and each timing is independently controlled. By doing so, it is possible to avoid interrupting the process other than transportation. Further, as process conditions, temperature control such as heating and cooling of the wafer, and preheating, precooling, or cleaning treatment in the buffer chamber is performed for processes that require cleaning treatment of the wafer surface before performing the process. The process time in the process chamber can be shortened to the limit.

3 and 4 each show an embodiment in which a plurality of process chambers are connected to a transfer chamber via a buffer chamber. The embodiment shown in FIG. 3 is a system in which process chambers are installed on both sides of a linear transfer chamber, and is suitable for expanding a multi-chamber system while adding or changing a large number of process chambers. Further, FIG. 4 shows a system in which a process chamber is installed around a transfer chamber having a four- to hexagonal shape, which is suitable for shortening the transfer time between the process chambers. Also, by adding a buffer chamber to the configuration described in the prior art,
Changes to the configuration according to the present invention can be easily made.

Not limited to the embodiment described above, the process contents in the process chamber, the number of buffer chambers, the preliminary processing contents in the buffer chamber, and the connection configuration of the process chamber, the buffer chamber, and the transfer chamber. The method can be designed in various ways and is not limited to the embodiment disclosed in the present invention.

[0017]

Since the multi-chamber process apparatus according to the present invention can reduce the internal volume of the buffer chamber,
It is easy to increase the throughput, and moreover, pre-heating and pre-cooling and wafer surface cleaning can be performed immediately before and after without changing the atmosphere in the process chamber. Since it is possible to prevent pollution and perform a homogeneous and clean process, it is possible to provide a method for manufacturing a high-performance semiconductor integrated circuit with a high yield, and to provide an inexpensive and high-performance semiconductor integrated circuit. is there.

[Brief description of drawings]

FIG. 1 is a block diagram of an embodiment of a multi-chamber process apparatus according to the present invention.

FIG. 2 is an explanatory view of a pressure state of a process chamber of a conventional system and a system according to the present invention.

FIG. 3 is an explanatory view of a second embodiment of the multi-chamber process device according to the present invention.

FIG. 4 is an explanatory view of a third embodiment of the multi-chamber process device according to the present invention.

FIG. 5 is a block diagram of a conventional multi-chamber process apparatus.

[Explanation of reference numerals] 1 ... Process device, 2 ... Vertical mechanism, 3 ... Process chamber, 4 ... Wafer transfer mechanism, 5 ... Transfer chamber,
6a, 6b, 8, 11a, 11b ... Gate valve, 7,
13 ... Wafer transfer mechanism, 8, 12 ... Buffer chamber,
9 ... Wafer stocker, 10 ... Stocker chamber.

Claims (2)

[Claims] 1. A transfer chamber provided with a first transfer mechanism for a wafer, which is maintained in an atmosphere isolated from the atmosphere,
In a multi-chamber process apparatus configured by connecting a plurality of process chambers via a gate valve, the wafer is transferred between the transfer chamber and each of the plurality of process chambers. Atmosphere conversion for matching the atmosphere in the wafer transfer destination with the second transfer mechanism and one or more buffer chambers equipped with vacuum exhaust and process gas supply functions By maintaining the atmosphere in the process chamber constant, and having an atmosphere control means for controlling the atmosphere so that the entire operating time except the wafer transfer time is used as the actual process time. Multi-chamber process equipment. 2. The multi-chamber process apparatus according to claim 1, further comprising means for preheating, precooling the wafer, or cleaning the surface of the wafer using a chemical reaction in the buffer chamber.