JPH08198674A - Semiconductor ceramic material having negative resistance-temperature characteristic and semiconductor ceramic parts using that - Google Patents
Semiconductor ceramic material having negative resistance-temperature characteristic and semiconductor ceramic parts using thatInfo
- Publication number
- JPH08198674A JPH08198674A JP7005870A JP587095A JPH08198674A JP H08198674 A JPH08198674 A JP H08198674A JP 7005870 A JP7005870 A JP 7005870A JP 587095 A JP587095 A JP 587095A JP H08198674 A JPH08198674 A JP H08198674A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor ceramic
- ceramic
- negative
- semiconductor
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、負の抵抗温度特性を
有する半導体セラミックとそれを用いた半導体セラミッ
ク部品に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor ceramic having a negative resistance temperature characteristic and a semiconductor ceramic component using the same.
【０００２】[0002]
【従来の技術】図４は従来の負の抵抗温度特性を有する
半導体セラミック（以下、負特性サーミスタという）の
外観図である。負特性サーミスタは、スピネル酸化物系
からなる負の抵抗温度特性を有する半導体セラミック
（図示していない）の両主面に電極（図示していない）
を形成し、前記電極に端子３ａ，３ｂを半田（図示して
いない）を介して接続し、外表面を樹脂４で被覆してい
る。2. Description of the Related Art FIG. 4 is an external view of a conventional semiconductor ceramic having a negative resistance temperature characteristic (hereinafter referred to as a negative characteristic thermistor). The negative characteristic thermistor includes electrodes (not shown) on both main surfaces of a semiconductor ceramic (not shown) having a negative temperature coefficient of resistance made of spinel oxide.
Are formed, terminals 3a and 3b are connected to the electrodes via solder (not shown), and the outer surface is covered with resin 4.
【０００３】例えば、スイッチング電源ではスイッチを
入れた瞬間に過電流が流れることから、この初期の突入
電流を吸収するものとして、いわゆる負特性サーミスタ
が用いられている。この負特性サーミスタは、室温での
抵抗値が高く、温度の上昇とともに抵抗値が低下する機
能を有しており、これにより初期の突入電流を抑制し、
その後自己発熱により昇温して低抵抗となり、定常状態
では電力消費量を低減できる。このような負特性サーミ
スタのセラミックとしては、従来からスピネル酸化物系
セラミックが用いられている。For example, a so-called negative characteristic thermistor is used to absorb the initial rush current because an overcurrent flows in the switching power supply at the moment when the switch is turned on. This negative characteristic thermistor has a high resistance value at room temperature and has a function of decreasing the resistance value as the temperature rises, thereby suppressing the initial inrush current,
After that, the temperature rises due to self-heating and becomes low resistance, and the power consumption can be reduced in the steady state. As a ceramic of such a negative characteristic thermistor, a spinel oxide-based ceramic has been conventionally used.
【０００４】ところで、近年、電子部品はチップ化、表
面実装（以下、ＳＭＤという）化への対応が要求され、
小型化、軽量化、低背化への対応が求められている。し
かしながら、図４に見られるように、従来の負特性サー
ミスタでは、端子を有する構造のため低背化しにくく、
また、スピネル酸化物系の半導体セラミックは、室温の
比抵抗が大きいため、低抵抗とするには形状を大きくし
なければならない。したがって、一般的なチップ部品、
例えばセラミックコンデンサのように、小型の素子を作
製することができなかった。By the way, in recent years, electronic parts are required to be made into chips and surface mounting (hereinafter referred to as SMD).
There is a demand for downsizing, weight reduction, and height reduction. However, as shown in FIG. 4, in the conventional negative characteristic thermistor, it is difficult to reduce the height because of the structure having the terminals.
Further, since the spinel oxide-based semiconductor ceramic has a large specific resistance at room temperature, its shape must be increased in order to reduce the resistance. Therefore, common chip parts,
For example, a small element such as a ceramic capacitor could not be manufactured.
【０００５】また、負特性サーミスタをＳＭＤ化して用
いた場合、負特性サーミスタ動作時の自己発熱により、
回路基板の温度が上昇するため、定常通電時における負
特性サーミスタの自己発熱を抑える必要があるが、従来
のスピネル酸化物系からなる負特性サーミスタのＢ定数
は３０００と小さく、昇温状態での抵抗値を十分小さく
できず、動作時に自己発熱が大きくなり、回路基板の温
度が高くなるという不都合も有していた。Further, when the negative characteristic thermistor is used in the form of SMD, self-heating during operation of the negative characteristic thermistor causes
Since the temperature of the circuit board rises, it is necessary to suppress the self-heating of the negative characteristic thermistor during steady energization. However, the B constant of the conventional negative characteristic thermistor made of spinel oxide is as small as 3000, and the There is also a disadvantage that the resistance value cannot be reduced sufficiently, self-heating increases during operation, and the temperature of the circuit board rises.
【０００６】そこで、比抵抗の小さくなるセラミックと
してＶＯ2系セラミックを負特性サーミスタに用いる
と、８０℃での比抵抗が１０〜０．０１Ω・cmに低下す
る抵抗値急変特性を示すことから、突入電流防止用とし
て優れていることがわかった。しかし、このＶＯ2系負
特性サーミスタは、セラミックが不安定であり、また還
元焼成後急冷して製造することから、その形状はビード
状に限定されるという問題点があった。さらに、許容電
流値が数十mAと小さいことから、スイッチング電源など
の大電流が流れる箇所においては使用することができな
かった。Therefore, when a VO 2 -based ceramic is used for a negative characteristic thermistor as a ceramic having a small specific resistance, it exhibits a sudden change in the resistance value that the specific resistance at 80 ° C. decreases to 10 to 0.01 Ω · cm. It was found to be excellent for preventing inrush current. However, this VO 2 -based negative characteristic thermistor has a problem that the ceramic is unstable and the shape thereof is limited to a bead shape because it is manufactured by rapid cooling after reduction firing. Further, since the allowable current value is as small as several tens of mA, it cannot be used in a place where a large current flows, such as a switching power supply.
【０００７】また、Ｂ定数が大きくなる負特性サーミス
タとして、ＢａＴｉＯ3にＬｉ2Ｏ3を２０mol％添加した
ものも提案されている（特公昭４８−６３５２）が、こ
の負特性サーミスタでは比抵抗が大きいためＳＭＤ化の
負特性サーミスタを作製することはできなかった。Further, as a negative characteristic thermistor for increasing the B constant, one in which 20 mol% of Li 2 O 3 is added to BaTiO 3 has been proposed (Japanese Patent Publication No. 48-6352), but this negative characteristic thermistor has a specific resistance. Since it is large, it was not possible to manufacture an SMD type negative characteristic thermistor.
【０００８】[0008]
【発明が解決しようとする課題】上記課題を解決するた
め、負の抵抗温度特性を有する半導体セラミック材料
で、その比抵抗がＳＭＤ化でき、かつ負特性サーミスタ
の自己発熱が抑制できるＢ定数の大きな電流制御に適し
た負特性サーミスタ材料の負特性サーミスタ素子を鋭意
検討した。In order to solve the above-mentioned problems, a semiconductor ceramic material having a negative resistance temperature characteristic, the specific resistance thereof can be SMD, and the self-heating of the negative characteristic thermistor can be suppressed, and the B constant is large. The negative characteristic thermistor element of the negative characteristic thermistor material suitable for current control was earnestly studied.
【０００９】その結果、田口、島田らが燃料電池の電極
材料として研究し、Ｊ．ＳｏｌｉｄＳｔａｔｅ Ｃｈｅ
ｍ．．６３．２９０（１９８６）で記載している、ＹＣ
ａＭｎ系酸化物からなるセラミックがあるが、この発明
の発明者らはこのセラミックが比抵抗１Ω・cm以下で、
Ｂ定数４０００以上を有し、かつ電流制御用としての実
用試験、例えば繰り返し通電試験を行っても特性変化し
ない優れた特性であることを見いだした。As a result, Taguchi, Shimada et al. Studied as an electrode material for fuel cells, and J. SolidState Che
m. ． 63.290 (1986), YC
There is a ceramic made of aMn-based oxide, but the inventors of the present invention have a specific resistance of 1 Ω · cm or less,
It has been found that the B constant is 4000 or more, and the characteristics are excellent even if a practical test for current control, for example, a repeated energization test is performed.
【００１０】この発明の目的は、比抵抗が小さく、Ｂ定
数が大きい負の抵抗温度特性を有する半導体セラミック
材料を用いることで、小型化、低背化でき、ＳＭＤ化で
き、昇温状態での抵抗値を小さくして発熱を抑えるとと
もに、大電流にも対応可能なる電流制御用の負の抵抗温
度特性を有する半導体セラミックと半導体セラミック部
品を提供することである。It is an object of the present invention to use a semiconductor ceramic material having a low specific resistance and a large B constant and a negative resistance temperature characteristic, whereby the size and height can be reduced, the SMD can be realized, and the temperature can be raised. It is an object of the present invention to provide a semiconductor ceramic and a semiconductor ceramic component having a negative resistance temperature characteristic for current control that can reduce a resistance value to suppress heat generation and can handle a large current.
【００１１】[0011]
【課題を解決するための手段】請求項１に係る発明は、
ＹＣａＭｎ系酸化物セラミックからなる負特性サーミス
タである。The invention according to claim 1 is
It is a negative characteristic thermistor made of a YCaMn-based oxide ceramic.
【００１２】請求項２に係る発明は、ＹＣａＭｎ系酸化
物セラミックが、一般式Ｙ1-xＣａxＭｎＯ3（ｘ＝０．
２〜０．６）であらわされる負特性サーミスタである。According to a second aspect of the present invention, the YCaMn-based oxide ceramic has the general formula Y 1-x Ca x MnO 3 (x = 0.
2 to 0.6), which is a negative characteristic thermistor.
【００１３】請求項３に係る発明は、セラミック素体
と、セラミック素体に形成される電極とからなり、セラ
ミック素体がＹＣａＭｎ系酸化物セラミックからなる半
導体セラミック部品である。The invention according to claim 3 is a semiconductor ceramic component comprising a ceramic body and an electrode formed on the ceramic body, the ceramic body being made of a YCaMn-based oxide ceramic.
【００１４】請求項４に係る発明は、ＹＣａＭｎ系酸化
物セラミックが、一般式Ｙ1-xＣａxＭｎＯ3（ｘ＝０．
２〜０．６）であらわされる半導体セラミック部品であ
る。According to a fourth aspect of the present invention, the YCaMn-based oxide ceramic has a general formula Y 1-x Ca x MnO 3 (x = 0.
2 to 0.6), which is a semiconductor ceramic component.
【００１５】請求項２および４において、その組成範囲
に限定したのは次の理由による。つまり、比抵抗が１以
下で、Ｂ定数が４０００以上の条件を満足するｘの組成
範囲は０．２〜０．６である。The reason why the composition range is limited in claims 2 and 4 is as follows. That is, the composition range of x satisfying the condition that the specific resistance is 1 or less and the B constant is 4000 or more is 0.2 to 0.6.
【００１６】[0016]
【作用】この発明による負特性サーミスタは、ＹＣａＭ
ｎ系酸化物からなり、比抵抗が小さく、Ｂ定数が大き
い。特に、一般式Ｙ1-xＣａxＭｎＯ3（ｘ＝０．２〜
０．６）であらわされる負特性サーミスタは、比抵抗が
１Ω・cm以下になり、しかもＢ定数が４０００以上の特
性を示す。The negative characteristic thermistor according to the present invention is the YCaM
It is made of an n-type oxide, has a small specific resistance, and has a large B constant. In particular, the general formula Y 1-x Ca x MnO 3 (x = 0.2 to
The negative characteristic thermistor represented by 0.6) has a specific resistance of 1 Ω · cm or less and a B constant of 4000 or more.
【００１７】この発明による半導体セラミック部品によ
れば、ＹＣａＭｎ系酸化物組成を用いることで比抵抗が
小さく、Ｂ定数が大きい部品が得られる。特に、一般式
Ｙ1-xＣａxＭｎＯ3（ｘ＝０．２〜０．６）であらわさ
れるセラミック素体を用いた半導体セラミック部品は、
比抵抗が１Ω・cm以下になり、しかもＢ定数が４０００
以上、かつ電流制御用としての実用試験、例えば繰り返
し通電試験を行っても特性変化しない優れた特性を持
つ。According to the semiconductor ceramic component of the present invention, a component having a small specific resistance and a large B constant can be obtained by using the YCaMn-based oxide composition. In particular, a semiconductor ceramic component using a ceramic body represented by the general formula Y 1-x Ca x MnO 3 (x = 0.2 to 0.6) is
The specific resistance is less than 1 Ω · cm and the B constant is 4000.
Further, it has excellent characteristics that the characteristics do not change even if a practical test for current control, for example, a repeated energization test is performed.
【００１８】[0018]
【実施例】以下、この発明を実施例により詳細に説明す
る。図１は、この発明の半導体セラミック部品の外観図
であり、負の抵抗温度特性を有する半導体セラミック素
体１の両端部に電極２ａ，２ｂを形成している。EXAMPLES The present invention will be described in detail below with reference to examples. FIG. 1 is an external view of a semiconductor ceramic component of the present invention, in which electrodes 2a and 2b are formed on both ends of a semiconductor ceramic body 1 having a negative resistance temperature characteristic.
【００１９】まず、Ｙ2Ｏ3，ＣａＣＯ3，Ｍｎ2Ｏ3の原
料を準備し、表１に示す組成となるように秤量する。こ
の粉末を純水、及びジルコニアボールとともにポリエチ
レン製ポットで７時間湿式混合した後、乾燥させて１０
００℃で２時間仮焼する。得られた仮焼粉に有機バイン
ダ、溶剤、分散剤とポリスチレン粒子を加え、再度ポリ
ポットで５時間湿式混合し、スラリーを得る。このスラ
リーで、厚さ５０μmのセラミックグリーンシートを形
成し、このグリーンシートを所定の寸法に切断、積層、
圧着を行い、最終的に抵抗値が８Ωになる大きさに成形
する。First, raw materials of Y 2 O 3 , CaCO 3 and Mn 2 O 3 are prepared and weighed so as to have the composition shown in Table 1. This powder was wet-mixed with pure water and zirconia balls in a polyethylene pot for 7 hours, then dried to 10
Calcination at 00 ° C for 2 hours. An organic binder, a solvent, a dispersant and polystyrene particles are added to the obtained calcined powder, and the mixture is wet-mixed again in a polypot for 5 hours to obtain a slurry. With this slurry, a ceramic green sheet having a thickness of 50 μm is formed, and this green sheet is cut into a predetermined size, laminated,
Crimping is performed, and finally, the resistance value is formed into a size of 8Ω.
【００２０】[0020]
【表１】 [Table 1]
【００２１】次に、この成形体を焼成さやに重ならない
ように一面に分散させ、４００℃で脱脂した後、酸素分
圧０．５MPa以上の雰囲気中で１４００℃で焼成を行
い、セラミック素体を得る。得られたセラミック素体を
バレル研磨で面取りを行い、セラミック素体端部にＡｇ
を主成分とする導電性粉末を混合した電極ペーストを塗
布、８００℃で焼き付け、半導体セラミック部品の電極
を形成する。Next, this molded body is dispersed over one surface so as not to overlap the firing sheath, degreased at 400 ° C., and then fired at 1400 ° C. in an atmosphere having an oxygen partial pressure of 0.5 MPa or more to obtain a ceramic body. To get The obtained ceramic body is chamfered by barrel polishing and Ag is attached to the end of the ceramic body.
An electrode paste mixed with a conductive powder containing as a main component is applied and baked at 800 ° C. to form an electrode of a semiconductor ceramic component.
【００２２】また、実施例の比較のため、図４に示す従
来例の半導体セラミック部品も作成した。これはＣｏ3
Ｏ4，Ｍｎ3Ｏ4，ＣｕＣＯ3それぞれを重量比で６：３：
１の割合で秤量し、これにバインダーを加えてジルコニ
アボールの入ったポリエチレン製のポットで７時間湿式
混合粉砕し、乾燥後、室温抵抗が８Ωになるように円板
状に成形し、大気中１２５０℃で２時間焼成する。得ら
れた円板状セラミック素体の両主面に電極の焼き付けを
行い、この電極に端子を半田付けし、さらに外表面を樹
脂で被覆した。For comparison of the examples, a conventional semiconductor ceramic component shown in FIG. 4 was also prepared. This is Co 3
The weight ratio of O 4 , Mn 3 O 4 , and CuCO 3 is 6: 3:
Weighed at a ratio of 1 and added a binder to this, wet mixed and pulverized in a polyethylene pot containing zirconia balls for 7 hours, dried, and then molded into a disk shape with a room temperature resistance of 8Ω, and in the air Bake at 1250 ° C. for 2 hours. Electrodes were baked on both principal surfaces of the obtained disk-shaped ceramic body, terminals were soldered to the electrodes, and the outer surface was covered with resin.
【００２３】図２は、通電試験の結果を示すグラフであ
り、縦軸に半導体セラミック部品の表面温度（℃）、横
軸に通電電流値（A）として、実線が実施例、破線が従
来例の曲線を示している。この図２から明らかなよう
に、この発明にかかる半導体セラミック部品の自己発熱
が従来例と比較して小さく低減されていることが分か
る。FIG. 2 is a graph showing the results of the energization test, in which the vertical axis represents the surface temperature (° C.) of the semiconductor ceramic component and the horizontal axis represents the energization current value (A), where the solid line is the example and the broken line is the conventional example. Shows the curve. As is apparent from FIG. 2, it is understood that the self-heating of the semiconductor ceramic component according to the present invention is reduced to a small extent as compared with the conventional example.
【００２４】図３は、断続通電試験の結果を示すグラフ
であり、縦軸に抵抗変化率、横軸に回数として、実施例
の試料に５Aの電流を１分間ＯＮ、５分間ＯＦＦの断続
通電を１００００回行い、その結果を示したものであ
る。グラフのデータは、実施例で得られた試料２０個を
測定し、平均値と最大値、最小値を示している。このグ
ラフから１００００回断続通電を行っても、抵抗変化
率、およびばらつきは全く見られず、電流制御素子とし
て十分適用できることが確認できた。FIG. 3 is a graph showing the results of the intermittent energization test, in which the vertical axis represents the rate of change in resistance and the horizontal axis represents the number of times, and the samples of the examples were intermittently energized with a current of 5 A for 1 minute and 5 minutes off. Is performed 10,000 times and the result is shown. The data in the graph shows the average value, the maximum value, and the minimum value obtained by measuring 20 samples obtained in the examples. From this graph, it was confirmed that the resistance change rate and the variation were not observed at all even after the intermittent energization was performed 10,000 times, and that the current control element can be sufficiently applied.
【００２５】なお実施例では、Ａｇ電極を用いたが、Ｐ
ｔ，Ｐｄ，Ｒｈ、あるいはそれらの合金などにおいても
同様な特性が得られる。Although the Ag electrode is used in the embodiment, P
Similar characteristics can be obtained with t, Pd, Rh, or alloys thereof.
【００２６】[0026]
【発明の効果】この発明の負の抵抗温度特性を有する半
導体セラミックによれば、ＹＣａＭｎ系酸化物セラミッ
クからなり、比抵抗が小さく、かつ温度上昇によるＢ定
数が大きい負特性を有している。特に、Ｙ1-xＣａxＭｎ
Ｏ3（ｘ＝０．２〜０．６）系セラミックは比抵抗が１
Ω・cm以下と小さく、かつ温度上昇によるＢ定数が４０
００以上と大きい負特性を顕著に示す。According to the semiconductor ceramic having a negative resistance temperature characteristic of the present invention, it is made of a YCaMn-based oxide ceramic, has a low specific resistance, and has a large B constant due to temperature rise. In particular, Y 1-x Ca x Mn
O 3 (x = 0.2 to 0.6) ceramic has a specific resistance of 1
Small as Ω · cm or less, and B constant of 40 due to temperature rise
A large negative characteristic of not less than 00 is remarkably exhibited.
【００２７】この発明の半導体セラミック部品によれ
ば、該セラミック素体をＹＣａＭｎ系酸化物で構成した
ので、比抵抗が小さく、かつ温度上昇によるＢ定数が大
きい負の抵抗温度特性が得られ、電流制御用の半導体セ
ラミック部品のＳＭＤ化を可能とし、さらに回路定常通
電時における素子の自己発熱を抑え基板温度の低減をは
かれる効果を得ることが可能となった。また、特に、Ｙ
1-xＣａxＭｎＯ3（ｘ＝０．２〜０．６）系セラミック
は、比抵抗が１Ω・cm以下と小さく、かつ温度上昇によ
るＢ定数が４０００以上と大きい負特性を顕著に示す。According to the semiconductor ceramic component of the present invention, since the ceramic body is made of the YCaMn-based oxide, a negative resistance-temperature characteristic having a small specific resistance and a large B constant due to temperature rise is obtained, The semiconductor ceramic parts for control can be made SMD, and further, it is possible to obtain the effect of suppressing the self-heating of the element when the circuit is steadily energized and reducing the substrate temperature. Also, in particular, Y
The 1-x Ca x MnO 3 (x = 0.2 to 0.6) ceramics have a large negative characteristic, which has a small specific resistance of 1 Ω · cm or less and a large B constant of 4000 or more due to temperature rise.
【００２８】上記のことより、小型で低背化が可能な表
面実装型の半導体セラミックおよび半導体セラミック部
品を得ることができる。From the above, it is possible to obtain a surface-mount type semiconductor ceramic and a semiconductor ceramic component which are small in size and can be made low in height.
【図１】この発明の半導体セラミック部品の斜視図を示
す。FIG. 1 shows a perspective view of a semiconductor ceramic component of the present invention.
【図２】この発明の実施例と従来例の通電試験結果を示
す曲線図である。FIG. 2 is a curve diagram showing a result of an energization test of an example of the present invention and a conventional example.
【図３】この発明の実施例の断続通電試験の結果を示す
特性図である。FIG. 3 is a characteristic diagram showing the results of an intermittent current test of an example of the present invention.
【図４】従来の負特性サーミスタの外観図を示す。FIG. 4 shows an external view of a conventional negative characteristic thermistor.
１ 負の抵抗温度特性を有する半導体セラミック素
体 ２ 電極1 Semiconductor ceramic body having negative resistance temperature characteristics 2 Electrode
Claims (4)
ことを特徴とする負の抵抗温度特性を有する半導体セラ
ミック。1. A semiconductor ceramic having a negative resistance-temperature characteristic, which is made of a YCaMn-based oxide ceramic.
一般式Ｙ1-xＣａxＭｎＯ3（ｘ＝０．２〜０．６）であ
らわされることを特徴とする請求項１に記載の負の抵抗
温度特性を有する半導体セラミック。2. The YCaMn-based oxide ceramic comprises:
The semiconductor ceramic having a negative resistance temperature characteristic according to claim 1, which is represented by a general formula Y 1-x Ca x MnO 3 (x = 0.2 to 0.6).
に形成される電極とからなり、前記セラミック素体はＹ
ＣａＭｎ系酸化物セラミックからなることを特徴とする
半導体セラミック部品。3. A ceramic body and electrodes formed on the ceramic body, wherein the ceramic body is Y
A semiconductor ceramic component comprising a CaMn-based oxide ceramic.
一般式Ｙ1-xＣａxＭｎＯ3（ｘ＝０．２〜０．６）であ
らわされることを特徴とする請求項３に記載の半導体セ
ラミック部品。4. The YCaMn-based oxide ceramic is
The semiconductor ceramic component according to claim 3, which is represented by the general formula Y 1-x Ca x MnO 3 (x = 0.2 to 0.6).
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07005870A JP3141719B2 (en) | 1995-01-18 | 1995-01-18 | Semiconductor ceramic having negative resistance-temperature characteristics and semiconductor ceramic parts using the same |
| TW085100527A TW293183B (en) | 1995-01-18 | 1996-01-17 | |
| KR1019960000887A KR960030454A (en) | 1995-01-18 | 1996-01-17 | Semiconductor ceramics having negative resistance temperature characteristics and semiconductor ceramic parts using the same |
| EP96100708A EP0723276A3 (en) | 1995-01-18 | 1996-01-18 | Semiconductor ceramic having negative resistance/temperature characteristics and semiconductor ceramic component utilizing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07005870A JP3141719B2 (en) | 1995-01-18 | 1995-01-18 | Semiconductor ceramic having negative resistance-temperature characteristics and semiconductor ceramic parts using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08198674A true JPH08198674A (en) | 1996-08-06 |
| JP3141719B2 JP3141719B2 (en) | 2001-03-05 |
Family
ID=11622977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07005870A Expired - Fee Related JP3141719B2 (en) | 1995-01-18 | 1995-01-18 | Semiconductor ceramic having negative resistance-temperature characteristics and semiconductor ceramic parts using the same |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0723276A3 (en) |
| JP (1) | JP3141719B2 (en) |
| KR (1) | KR960030454A (en) |
| TW (1) | TW293183B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016195065A1 (en) * | 2015-06-04 | 2016-12-08 | 株式会社村田製作所 | Ceramic material and resistive element |
| JPWO2018235432A1 (en) * | 2017-06-20 | 2019-06-27 | 株式会社芝浦電子 | Thermistor sintered body and thermistor element |
| CN115925418A (en) * | 2022-12-14 | 2023-04-07 | 肇庆市金龙宝电子有限公司 | Low-temperature NTC thermistor ceramic and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5879750A (en) * | 1996-03-29 | 1999-03-09 | Denso Corporation | Method for manufacturing thermistor materials and thermistors |
| WO1997049104A1 (en) * | 1996-06-17 | 1997-12-24 | Thermometrics, Inc. | Sensors and methods of making wafer sensors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2733667B2 (en) * | 1988-07-14 | 1998-03-30 | ティーディーケイ株式会社 | Semiconductor porcelain composition |
| JP3084884B2 (en) * | 1992-02-19 | 2000-09-04 | 株式会社村田製作所 | Method for firing Mn3O4-based porcelain |
| JPH05258906A (en) * | 1992-03-13 | 1993-10-08 | Tdk Corp | Chip type thermistor |
| JP3121982B2 (en) * | 1994-03-11 | 2001-01-09 | 京セラ株式会社 | Conductive ceramics |
-
1995
- 1995-01-18 JP JP07005870A patent/JP3141719B2/en not_active Expired - Fee Related
-
1996
- 1996-01-17 KR KR1019960000887A patent/KR960030454A/en not_active IP Right Cessation
- 1996-01-17 TW TW085100527A patent/TW293183B/zh not_active IP Right Cessation
- 1996-01-18 EP EP96100708A patent/EP0723276A3/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016195065A1 (en) * | 2015-06-04 | 2016-12-08 | 株式会社村田製作所 | Ceramic material and resistive element |
| JPWO2016195065A1 (en) * | 2015-06-04 | 2018-03-29 | 株式会社村田製作所 | Ceramic material and resistance element |
| US10134512B2 (en) | 2015-06-04 | 2018-11-20 | Murata Manufacturing Co., Ltd. | Ceramic material and resistive element |
| JPWO2018235432A1 (en) * | 2017-06-20 | 2019-06-27 | 株式会社芝浦電子 | Thermistor sintered body and thermistor element |
| US10643768B2 (en) | 2017-06-20 | 2020-05-05 | Shibaura Electronics Co., Ltd. | Thermistor sintered body and thermistor element |
| CN115925418A (en) * | 2022-12-14 | 2023-04-07 | 肇庆市金龙宝电子有限公司 | Low-temperature NTC thermistor ceramic and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0723276A2 (en) | 1996-07-24 |
| EP0723276A3 (en) | 1997-06-18 |
| KR960030454A (en) | 1996-08-17 |
| JP3141719B2 (en) | 2001-03-05 |
| TW293183B (en) | 1996-12-11 |
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