JPH08191101A - Semiconductor substrate container - Google Patents

Semiconductor substrate container

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Publication number
JPH08191101A
JPH08191101A JP85295A JP85295A JPH08191101A JP H08191101 A JPH08191101 A JP H08191101A JP 85295 A JP85295 A JP 85295A JP 85295 A JP85295 A JP 85295A JP H08191101 A JPH08191101 A JP H08191101A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor substrate
supporting member
storage container
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP85295A
Other languages
Japanese (ja)
Inventor
Masaya Onishi
正哉 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP85295A priority Critical patent/JPH08191101A/en
Publication of JPH08191101A publication Critical patent/JPH08191101A/en
Pending legal-status Critical Current

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  • Packaging Frangible Articles (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: To keep a substrate from damage or dusts due to the vibration or the shock in transit causing neither notable bending nor straining. CONSTITUTION: The semiconductor substrate container 10 is provided with a pair of upper and lower containers 10 comprising a lower container 3 and an upper container 2 capable of being sealed up and a substrate supporting member 4 contained in the containers 10 elastically supporting the periphery and rear surface of the substrate with gas pressure. This substrate supporting member 4 in a bag shape is expanded by injecting a gas thereinto while the upper part thereof in an opened and bottomed cylindrical shape so that a semiconductor substrate 1 may be supported by the bottom part 4b and a trench 4c provided inside the sidewall 4a.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体基板を梱包して輸
送するための半導体基板収納容器に係り、特に枚葉式の
半導体基板収納容器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate container for packing and transporting semiconductor substrates, and more particularly to a single-wafer semiconductor substrate container.

【0002】[0002]

【従来の技術】IC、LSIあるいはメモリといった電
子デバイスの製作に供される半導体基板には電子デバイ
スのチップサイズやコストの関係から、さらなる大直径
化が要求されている。基板の大直径化を進めるためには
製造技術の検討もさることながら、ハンドリング、梱
包、輸送といった面での基板保護の検討も重要な位置を
占めてくる。
2. Description of the Related Art A semiconductor substrate used for manufacturing an electronic device such as an IC, an LSI or a memory is required to have a larger diameter in view of the chip size and cost of the electronic device. In order to increase the diameter of the substrate, it is important to consider not only the manufacturing technology but also the protection of the substrate in terms of handling, packing, and transportation.

【0003】なかでも、移動体通信関係の進展に伴い、
GaAs基板の大直径化が強く望まれており、既にφ6
インチ径基板の要求も出ている。しかしながら、GaA
s基板には、従来より広く用いられてきたSi基板に比
べ、重くかつ脆いという問題がある。そこで、厚さ70
0μm程度でありながら1枚あたり60g以上もするG
aAs基板を梱包、輸送する際においていかに保護する
かが重要な課題となっている。
Above all, with the progress of mobile communication,
It is strongly desired to increase the diameter of GaAs substrates, and φ6
There is also a demand for inch diameter substrates. However, GaA
The s substrate has a problem that it is heavier and more brittle than the Si substrate which has been widely used conventionally. Therefore, thickness 70
G that weighs 60g or more per sheet although it is about 0μm
An important issue is how to protect an aAs substrate during packaging and transportation.

【0004】従来より半導体基板の梱包には図3、図4
に示すごとく枚葉式あるいは多数枚式の基板収納容器が
用いられてきた。
Conventionally, as shown in FIG. 3 and FIG.
Single-wafer type or multiple-type substrate storage containers have been used as shown in FIG.

【0005】図3は枚葉式収納容器であり、鏡面加工さ
れた半導体基板1は鏡面を下にした状態でトレイ3に収
納され、裏面側からスプリング5および蓋2で押えられ
て固定される。一般にスプリング5は、図3に示すよう
に半導体基板1の外周付近を押えるように載置される。
FIG. 3 shows a single-wafer type storage container in which a mirror-finished semiconductor substrate 1 is stored in a tray 3 with its mirror surface facing down, and is fixed by being pressed by a spring 5 and a lid 2 from the back side. . Generally, the spring 5 is mounted so as to press the vicinity of the outer periphery of the semiconductor substrate 1 as shown in FIG.

【0006】図4は多数枚式縦型基板収納容器であり、
半導体基板1は下部を閉じた箱形の基板収納容器6内に
縦方向に多数枚並列に収納され、上部から基板支持部7
で蓋をすることにより基板周辺が押え付けられて固定さ
れる。
FIG. 4 shows a multi-type vertical substrate storage container,
A large number of semiconductor substrates 1 are vertically housed in parallel in a box-shaped substrate storage container 6 with the lower part closed, and the substrate support part 7 from the upper part.
The periphery of the substrate is pressed and fixed by closing the lid with.

【0007】[0007]

【発明が解決しようとする課題】しかし、図3に示すも
のでは、スプリング5が半導体基板1の外周付近を押え
るため、基板1は固定端を持つ梁状になり、中央部で大
きく撓むとともに、固定端付近には大きな歪みが生じ
る。現在主流であるφ3インチ、φ4インチ径基板で
は、この方法によって割れが発生する等の問題は表面化
していないが、さらにサイズアップした場合には輸送中
の振動、衝撃等による基板破損が懸念される。なお、ス
プリング5を図3とは反対向き、即ち基板1の裏面中央
部に接するように載置することも考えられるが、この場
合は基板中央を強制的に加重し続けることになり、基板
1に対し好ましい状態とは言えない。
However, in the structure shown in FIG. 3, since the spring 5 presses the vicinity of the outer periphery of the semiconductor substrate 1, the substrate 1 becomes a beam having a fixed end and largely bends in the central portion. Large distortion occurs near the fixed end. The current mainstream Φ3 inch and Φ4 inch diameter substrates do not have problems such as cracking caused by this method, but if the size is further increased, there is a concern that the substrate will be damaged due to vibration or shock during transportation. It It is possible to mount the spring 5 in the direction opposite to that of FIG. 3, that is, in contact with the center of the back surface of the substrate 1, but in this case, the center of the substrate is forcibly continued to be loaded, and However, it cannot be said that it is in a preferable state.

【0008】また、図4に示すものでは、多数枚の基板
が同時に収納できるため、枚葉式と比較して輸送効率が
格段に高いという利点があるが、基板周辺と収納容器の
基板支持部との接触部で輸送中の振動等により発塵、破
損することがあり、この傾向は基板重量に比例して高く
なることを経験している。即ち、1枚の基板の発塵、破
損が他の全ての基板に影響を及ぼすという点では、非常
にリスクの大きな梱包方法といえ、大直径の基板を扱う
には適した方法とはいえない。
Further, in the structure shown in FIG. 4, a large number of substrates can be accommodated at the same time, so that there is an advantage that the transportation efficiency is remarkably higher than that of the single-wafer type. We have experienced that dust may be generated or damaged due to vibration during transportation at the contact part with, and this tendency increases in proportion to the substrate weight. In other words, it is a very risky packing method in that dusting or damage of one board affects all other boards, and is not a suitable method for handling a large-diameter board. .

【0009】本発明の目的は、上記した従来技術の問題
点を解消し、収納された半導体基板に大きな撓みや歪み
を生じさせず、従って輸送中の振動や衝撃によって基板
が破損したり発塵することのない半導体基板収納容器を
提供することにある。
An object of the present invention is to solve the above-mentioned problems of the prior art and to prevent the stored semiconductor substrate from being greatly bent or distorted, so that the substrate may be damaged or dusted due to vibration or impact during transportation. It is to provide a semiconductor substrate storage container that does not do so.

【0010】[0010]

【課題を解決するための手段】第1の発明は、鏡面加工
された半導体基板を収納する半導体基板収納容器におい
て、密閉可能な上下一対の収納容器と、該収納容器内に
納められ、かつ半導体基板の鏡面側に触れることなく基
板周囲および基板裏面を気体圧で弾力的に支持する基板
支持部材とを備えたものである。
SUMMARY OF THE INVENTION A first invention is a semiconductor substrate storage container for storing a mirror-finished semiconductor substrate, and a pair of upper and lower sealable storage containers and a semiconductor which is stored in the storage container. The substrate support member elastically supports the periphery of the substrate and the back surface of the substrate by gas pressure without touching the mirror surface side of the substrate.

【0011】第2の発明は、上記基板支持部材が袋状に
なっており、内部に気体を注入することによって膨らん
で上部が開口した有底の円筒形状となり、半導体基板は
その底部と側壁の内側とに支持されるようになってい
る。内部に注入する流体は液体とすることも可能である
が、漏れ等を考慮すると、空気あるいは不活性ガスであ
ることが好ましい。
According to a second aspect of the present invention, the substrate supporting member is in the shape of a bag, and is inflated by injecting gas into the inside thereof to form a bottomed cylindrical shape with an open upper portion. It is designed to be supported on the inside. The fluid to be injected into the inside may be liquid, but in consideration of leakage and the like, air or inert gas is preferable.

【0012】第3の発明は、上記円筒形状の基板支持部
材の側壁の内側に半導体基板厚さ程度の溝が設けられ、
かつ側壁に上部開口から上記溝よりも深い所まで達する
切欠きが1箇所または2箇所以上設けられ、さらに袋状
の基板支持部材の底部と側壁とは個別に気体が注入でき
るように仕切られており、気体注入前は側壁が外側に倒
れるようになっているものである。
According to a third aspect of the present invention, a groove having a thickness of the semiconductor substrate is provided inside the side wall of the cylindrical substrate supporting member.
In addition, the side wall is provided with one or more notches extending from the upper opening to a position deeper than the groove, and the bottom of the bag-like substrate supporting member and the side wall are individually partitioned so that gas can be injected. Before the gas is injected, the side wall is inclined outward.

【0013】第4の発明は、ポリプロピレンが他の樹脂
に比べて耐熱性、引張り強さ、耐摩耗性、低密度であ
り、射出成形法によって容易に生産できることから、上
下一対の収納容器および基板支持部材をともにポリプロ
ピレンで形成したものである。
A fourth aspect of the present invention is that polypropylene has heat resistance, tensile strength, wear resistance, and low density as compared with other resins and can be easily produced by an injection molding method. Both the supporting members are made of polypropylene.

【0014】[0014]

【作用】第1の発明においては、半導体基板の鏡面側に
触れることなく、基板周囲のみならず基板裏面が基板支
持部材に気体圧力で弾力的に支持されていると、半導体
基板に大きな撓みや歪みが生じることなく、また破損し
たり発塵することもない。また、半導体基板を支持させ
た基板支持部材を収納容器に納めて密閉するので、外部
の雰囲気や塵の侵入等を遮断できる。
In the first aspect of the invention, when the semiconductor substrate is elastically supported by the substrate support member not only on the periphery of the substrate but also on the substrate backside by the gas pressure without touching the mirror surface side of the semiconductor substrate, a large deflection or There is no distortion and no damage or dust generation. In addition, since the substrate supporting member supporting the semiconductor substrate is housed in the storage container and hermetically sealed, it is possible to block the external atmosphere, the intrusion of dust, and the like.

【0015】第2の発明においては、袋状の基板支持部
材の内部に気体を注入して膨らませ、基板支持部材を円
筒形状にする。この円筒形状になった基板支持部材の底
部と側壁の内側とに半導体基板を支持させる。半導体基
板の支持にあたっては、気体注入前に半導体基板を基板
支持部材上にセットするようにしても、あるいは気体封
入後に円筒形状になった基板支持部材にセットするよう
にしてもよい。気体が振動、衝撃に対する緩衝部材とな
るので、振動、衝撃から半導体基板を有効に保護する。
In the second aspect of the present invention, gas is injected into the inside of the bag-shaped substrate supporting member to inflate it so that the substrate supporting member has a cylindrical shape. The semiconductor substrate is supported on the bottom of the cylindrical substrate support member and the inside of the side wall. In supporting the semiconductor substrate, the semiconductor substrate may be set on the substrate supporting member before gas injection, or may be set on a cylindrical substrate supporting member after gas filling. Since the gas serves as a buffer member against vibration and shock, the semiconductor substrate is effectively protected from vibration and shock.

【0016】第3の発明においては、まず、基板支持部
材の底部に気体を注入して底部を膨らませておく。その
底部に鏡面加工された半導体基板を鏡面側を上にして置
く。次に、外側に倒れている側壁に気体を注入して側壁
を膨らませる。全ての側壁を膨らませて基板支持部材を
円筒形状にした後、底部をさらに膨らませ、半導体基板
が側壁の内側に形成した溝に納るように底部の高さを調
整する。調整後、半導体基板を支持させた円筒形状の基
板支持部材を一対の収納容器に納めて密閉する。半導体
基板の取出しは、側壁に設けた切欠きから真空ピンセッ
トなどを基板裏面側に挿入することにより行う。
In the third invention, first, gas is injected into the bottom of the substrate support member to swell the bottom. A mirror-finished semiconductor substrate is placed on the bottom of the semiconductor substrate with the mirror surface side facing up. Next, gas is injected into the side wall that is tilted outward to inflate the side wall. After inflating all the side walls to make the substrate support member into a cylindrical shape, the bottom is further inflated, and the height of the bottom is adjusted so that the semiconductor substrate fits in the groove formed inside the side walls. After the adjustment, the cylindrical substrate supporting member supporting the semiconductor substrate is placed in a pair of storage containers and hermetically sealed. The semiconductor substrate is taken out by inserting vacuum tweezers or the like into the back side of the substrate through a notch provided in the side wall.

【0017】第4の発明においては、一対の収納容器お
よび基板支持部材を射出成形により製造する。ポリプロ
ピレンは耐摩耗性があるので、発塵することがない。
In the fourth invention, the pair of storage containers and the substrate supporting member are manufactured by injection molding. Since polypropylene has abrasion resistance, it does not generate dust.

【0018】[0018]

【実施例】以下に本発明の実施例を説明する。図1は本
実施例によるGaAs基板を収納する枚葉式の半導体基
板収納容器の断面図である。
Embodiments of the present invention will be described below. FIG. 1 is a sectional view of a single-wafer type semiconductor substrate storage container for storing a GaAs substrate according to this embodiment.

【0019】半導体基板収納容器は、上下一対の収納容
器10と、その内部に収納される基板支持部材4とから
構成される。上下一対の収納容器10は、背の低い円筒
形の下部収納容器3と、これの蓋にあたる円筒形の上部
収納容器2とから成り、密閉状態を保つために下部収納
容器3に雄ねじを、上部収納容器2に雌ねじを切ってあ
り、上部収納容器2を回転させることで密閉できるよう
になっている。
The semiconductor substrate accommodating container is composed of a pair of upper and lower accommodating containers 10 and a substrate supporting member 4 accommodated therein. The pair of upper and lower storage containers 10 is composed of a lower cylindrical lower storage container 3 and a cylindrical upper storage container 2 corresponding to the lid of the lower storage container 3. A male screw is attached to the lower storage container 3 in order to maintain a sealed state. A female screw is cut on the storage container 2, and the upper storage container 2 can be sealed by rotating the upper storage container 2.

【0020】基板支持部材4は上部が開口した有底の円
筒形をしており、底部4bと側壁4aとを備え、下部収
納容器3の内径と嵌め合い状態で収納される。基板1は
裏面側が基板支持部材4の底部4bと接触して支持され
るように、鏡面側を上にして置かれており、また基板1
の周囲は基板支持部材4の側壁4aの内側に設けられた
溝4cによって支持されている。この基板支持部材4
は、ポリプロピレンを射出成形して袋状にしたものであ
り、内部に気体を注入することによって膨らみ、その結
果上記したように有底で上部が開口した円筒形状とな
る。
The substrate supporting member 4 has a bottomed cylindrical shape with an open upper portion, is provided with a bottom portion 4b and a side wall 4a, and is housed in a state fitted to the inner diameter of the lower housing container 3. The substrate 1 is placed with the mirror surface side up so that the back surface side is in contact with and supported by the bottom portion 4b of the substrate supporting member 4.
The periphery of is supported by a groove 4c provided inside the side wall 4a of the substrate supporting member 4. This substrate support member 4
Is a bag made by injection-molding polypropylene, and swells when gas is injected into the bag, resulting in a cylindrical shape with a bottom and an open top as described above.

【0021】図2に詳細を示すごとく、基板支持部材4
は、その側壁4aの内側の周囲には基板周囲を支持する
ための半導体基板厚さ程度の溝4cが形成されている。
また側壁4aの一部には、基板1の取出し時に真空ピン
セット等が挿入可能なように、上部開口から溝4cより
も深い所まで達する切欠き4dが設けられている。この
切欠き4dは1個でもよいが、複数個(図示例では4
個)設けるようにしてもよい。側壁4a、底部4bはそ
れぞれ仕切られた気体室になっており、空気または不活
性ガス等の注入により膨らませて、図2に示すような円
筒形状となる。各々の気体室には図示されない気体注入
口が設けられており、基板収納時にここから気体を注入
する。なお、溝4cは底部4bが最大限膨らんだときに
基板裏面と接触するような高さに設けられている。
As shown in detail in FIG. 2, the substrate support member 4
A groove 4c having a thickness of the semiconductor substrate is formed around the inside of the side wall 4a for supporting the substrate periphery.
In addition, a cutout 4d that reaches a portion deeper than the groove 4c from the upper opening is provided in a part of the side wall 4a so that vacuum tweezers or the like can be inserted when the substrate 1 is taken out. The notch 4d may be one, but a plurality (4 in the illustrated example
Individual pieces may be provided. The side wall 4a and the bottom portion 4b are respectively partitioned gas chambers, which are inflated by injection of air or an inert gas to have a cylindrical shape as shown in FIG. A gas injection port (not shown) is provided in each of the gas chambers, and gas is injected from there when the substrate is stored. The groove 4c is provided at such a height that it comes into contact with the back surface of the substrate when the bottom portion 4b expands to the maximum extent.

【0022】さて、基板1の収納に先立ち、基板支持部
材4の底部4bに窒素ガスを注入して最大限の80〜9
0%程度膨らませておく。デバイス製作面を鏡面加工さ
れたφ6インチGaAs基板1は、鏡面検査の後、基板
支持部材4の底部4b上に鏡面側を上にして置かれる。
このとき、側壁4aは気体未注入の状態であり、底部4
bの外側に倒れている。基板1を支持部材4上に置いた
後、側壁4aに窒素ガスを順次注入し膨らませる。全て
の側壁4aを膨らませた後、底部4bを最大限膨らま
せ、基板1が溝4cに納るように調整する。底部4bと
側壁4aの内側の溝4cとに基板1を支持させた基板支
持部材4を下部収納容器3に入れた後、上部収納容器2
をかぶせ、ねじって密閉する。
Prior to the accommodation of the substrate 1, nitrogen gas is injected into the bottom portion 4b of the substrate supporting member 4 so that the maximum amount of 80 to 9 is reached.
Inflate about 0%. The φ6 inch GaAs substrate 1 whose device manufacturing surface is mirror-finished is placed on the bottom portion 4b of the substrate supporting member 4 with the mirror surface side up after the mirror surface inspection.
At this time, the side wall 4a is in a state where no gas is injected, and the bottom 4
It has fallen outside b. After the substrate 1 is placed on the support member 4, nitrogen gas is sequentially injected into the side wall 4a to inflate it. After inflating all the side walls 4a, the bottom portion 4b is inflated to the maximum extent, and the substrate 1 is adjusted so as to fit in the groove 4c. After the substrate support member 4 supporting the substrate 1 in the bottom portion 4b and the groove 4c inside the side wall 4a is put in the lower storage container 3, the upper storage container 2
Cover and twist to seal.

【0023】このようにして1枚のGaAs基板1を収
納した収納容器10を10個まとめてアルミラミネート
袋に窒素封入し、さらにそれを発泡スチロール等の緩衝
材をつけたダンボール箱に入れ、振動試験を実施した。
In this way, 10 storage containers 10 each containing one GaAs substrate 1 are put together in an aluminum laminated bag and sealed with nitrogen, and then placed in a cardboard box provided with a cushioning material such as Styrofoam and subjected to a vibration test. Was carried out.

【0024】振動条件は、 =振幅:1.5mm =周波数:10〜55Hz =周波数変動収周期:1分 =試験時間:2時間 とし、試験前後の基板の鏡面清浄度の測定値で評価し
た。その結果、鏡面清浄度は、0.2μm以上のパーテ
ィクルが試験前後で最大10個/ウェハ、平均5個/ウ
ェハ増加したに止まった。また、割れ等の破損は全く生
じなかった。これはφ3インチ、φ4インチを通常用い
られている図3に示すような枚葉式基板収納容器に入れ
て同様の試験を行ったときの結果と比較して遜色ないレ
ベルのものであった。
The vibration conditions were: amplitude: 1.5 mm = frequency: 10 to 55 Hz = frequency fluctuation collection period: 1 minute = test time: 2 hours, and evaluation was made by the measured values of the mirror surface cleanliness of the substrate before and after the test. As a result, the mirror surface cleanliness increased by a maximum of 10 particles / wafer, an average of 5 particles / wafer, before and after the test. Also, no damage such as cracking occurred at all. This was at a level comparable to the result when the same test was carried out by putting φ3 inch and φ4 inch in the commonly used single-wafer type substrate storage container as shown in FIG.

【0025】上述したように、本実施例によれば、枚葉
式半導体基板収納容器として、気体を緩衝部材とした袋
状の基板支持部材4によって、基板1の鏡面に触れるこ
となく基板周囲および基板裏面を支持するようにしたの
で、振動、衝撃から半導体基板1を有効に保護でき、基
板に大きな撓みや歪みを生じさせることなく、また発塵
することもないので、これらの基板を用いる半導体デバ
イスを歩留り良く製造することができる。
As described above, according to this embodiment, as the single-wafer type semiconductor substrate storage container, the bag-shaped substrate support member 4 having a gas buffering member is used to cover the periphery of the substrate 1 without touching the mirror surface of the substrate 1. Since the back surface of the substrate is supported, the semiconductor substrate 1 can be effectively protected from vibration and impact, and the substrate is not largely bent or deformed, and dust is not generated. The device can be manufactured with high yield.

【0026】また、基板載置後に気体を注入して基板支
持部材4を膨らまし、気体の量を調整することにより基
板1を自動的に支持させるようにしたので、基板1のセ
ットが容易で、しかも基板載置後は全く基板1に触れな
いようにすることができる。また、基板支持部材4には
切欠き4dが溝4cよりも深い所まで設けられているの
で、この切欠き4dから基板1の裏面側に真空ピンセッ
トを挿入すれば、鏡面側に触れることなく基板1を容易
に把持することができ、また基板支持部材4から取り出
すには、気体注入口から注入した気体を逃がして基板支
持部材4を縮めるようにすればよい。
Further, since the substrate 1 is automatically supported by inflating the substrate supporting member 4 by injecting gas after placing the substrate and adjusting the amount of gas, the substrate 1 can be easily set. Moreover, it is possible not to touch the substrate 1 at all after placing the substrate. Further, since the notch 4d is formed in the substrate supporting member 4 to a position deeper than the groove 4c, if vacuum tweezers are inserted from the notch 4d to the back surface side of the substrate 1, the substrate surface is not touched. 1 can be easily grasped, and in order to take it out from the substrate supporting member 4, the gas injected from the gas injection port can be released to shrink the substrate supporting member 4.

【0027】なお、上記実施例では基板支持部材の底部
と側壁とを仕切るようにしたが、仕切らずに一体として
もよい。また、半導体基板を側壁の周囲の溝だけで支持
するようにしてもよく、その場合には、基板支持部材を
上下逆にして収納容器に収納するようにしても、または
収納容器および基板支持部材をともに縦型にして、縦方
向に収納するようにしてもよい。
Although the bottom and side walls of the substrate support member are partitioned in the above embodiment, they may be integrated without partitioning. Further, the semiconductor substrate may be supported only by the groove around the side wall, and in that case, the substrate supporting member may be upside down and accommodated in the accommodating container, or the accommodating container and the substrate supporting member. Both may be made vertical and may be accommodated in the vertical direction.

【0028】[0028]

【発明の効果】請求項1に記載の発明によれば、φ6イ
ンチGaAs基板のような大直径、重量級の基板を収納
する場合においても、基板に大きな撓みや歪みを生じさ
せることなく、また破損したり発塵することもない。
According to the invention described in claim 1, even when a large-diameter, heavy-weight substrate such as a φ6 inch GaAs substrate is stored, the substrate is not largely bent or distorted, and There is no damage or dust.

【0029】請求項2に記載の発明によれば、気体によ
って膨らまされた円筒形状の基板支持部材によって半導
体基板は支持されるので、衝撃をやわらげることがで
き、輸送中の振動、衝撃等による半導体基板の破損が生
じない。
According to the second aspect of the invention, since the semiconductor substrate is supported by the cylindrical substrate supporting member which is inflated by the gas, the shock can be softened, and the semiconductor due to vibration, shock or the like during transportation. No damage to the board.

【0030】請求項3に記載の発明によれば、側壁の内
側に基板厚さ程度の溝が設けてあるので基板が移動せず
確実に支持でき、また、側壁に溝よりも深い切欠きを設
けたことにより、切欠きに真空ピンセットなどを挿入す
ることにより半導体基板を裏側から容易に把持すること
ができる。
According to the third aspect of the present invention, since the groove having the thickness of the substrate is provided inside the side wall, the substrate can be reliably supported without moving, and the side wall has a notch deeper than the groove. By providing the semiconductor substrate, the semiconductor substrate can be easily gripped from the back side by inserting vacuum tweezers or the like into the notch.

【0031】請求項4に記載の発明によれば、収納容器
も基板支持部材も共にポリプロピレンで形成したので、
所定形状に容易に製造でき、しかもポリプロピレンは耐
摩耗性であるため発塵をなくすことができる。
According to the invention of claim 4, both the storage container and the substrate supporting member are made of polypropylene.
It can be easily manufactured into a predetermined shape, and since polypropylene is abrasion resistant, it can eliminate dust generation.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係わる半導体基板収納容器
の断面図である。
FIG. 1 is a sectional view of a semiconductor substrate storage container according to an embodiment of the present invention.

【図2】本実施例の半導体基板収納容器を構成する基板
支持部材の斜視図である。
FIG. 2 is a perspective view of a substrate support member that constitutes the semiconductor substrate storage container of this embodiment.

【図3】従来の半導体基板収納容器の断面図である。FIG. 3 is a sectional view of a conventional semiconductor substrate storage container.

【図4】従来の他の半導体基板収納容器の断面図であ
る。
FIG. 4 is a cross-sectional view of another conventional semiconductor substrate storage container.

【符号の説明】[Explanation of symbols]

1 半導体基板 2 上部収納容器 3 下部収納容器 4 基板支持部材 4a 側壁 4b 底部 4c 溝 4d 切欠き 10 収納容器 1 Semiconductor Substrate 2 Upper Storage Container 3 Lower Storage Container 4 Substrate Support Member 4a Side Wall 4b Bottom 4c Groove 4d Notch 10 Storage Container

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】鏡面加工された半導体基板を収納する半導
体基板収納容器において、密閉可能な上下一対の収納容
器と、該収納容器内に納められ、かつ半導体基板の鏡面
側に触れることなく基板周囲および基板裏面を気体圧で
弾力的に支持する基板支持部材とを備えたことを特徴と
する半導体基板収納容器。
1. A semiconductor substrate storage container for storing a mirror-finished semiconductor substrate, comprising a pair of upper and lower sealable storage containers, and a substrate periphery that is housed in the storage container and does not touch the mirror surface side of the semiconductor substrate. And a substrate supporting member that elastically supports the back surface of the substrate with a gas pressure.
【請求項2】上記基板支持部材は袋状になっており、内
部に気体を注入することによって膨らんで上部が開口し
た有底の円筒形状となり、半導体基板はその底部と側壁
の内側とに支持されることを特徴とする請求項1に記載
の半導体基板収納容器。
2. The substrate supporting member is in the shape of a bag, and has a bottomed cylindrical shape that swells by injecting gas into the inside and has an open top, and the semiconductor substrate is supported on the bottom and the inside of the side wall. The semiconductor substrate storage container according to claim 1, wherein:
【請求項3】上記円筒形状の基板支持部材の側壁の内側
に半導体基板厚さ程度の溝が設けられ、かつ側壁に上部
開口から上記溝よりも深い所まで達する切欠きが1箇所
または2箇所以上設けられ、さらに袋状の基板支持部材
の底部と側壁とは個別に気体が注入できるように仕切ら
れており、気体注入前は側壁が外側に倒れるようになっ
ていることを特徴とする請求項2に記載の半導体基板収
納容器。
3. A groove having a thickness of the semiconductor substrate is provided inside the side wall of the cylindrical substrate supporting member, and one or two notches are formed in the side wall to reach a position deeper than the groove from the upper opening. It is characterized in that the bottom portion and the side wall of the bag-like substrate supporting member provided above are partitioned so that gas can be injected individually, and the side wall is inclined outward before the gas is injected. Item 2. A semiconductor substrate storage container according to item 2.
【請求項4】上下一対の円形収納容器および基板支持部
材がポリプロピレンからなることを特徴とする請求項1
ないし3のいずれかに記載の半導体基板収納容器。
4. The pair of upper and lower circular storage containers and the substrate supporting member are made of polypropylene.
The semiconductor substrate storage container according to any one of 1 to 3.
JP85295A 1995-01-06 1995-01-06 Semiconductor substrate container Pending JPH08191101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP85295A JPH08191101A (en) 1995-01-06 1995-01-06 Semiconductor substrate container

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP85295A JPH08191101A (en) 1995-01-06 1995-01-06 Semiconductor substrate container

Publications (1)

Publication Number Publication Date
JPH08191101A true JPH08191101A (en) 1996-07-23

Family

ID=11485182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP85295A Pending JPH08191101A (en) 1995-01-06 1995-01-06 Semiconductor substrate container

Country Status (1)

Country Link
JP (1) JPH08191101A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332278A (en) * 2005-05-25 2006-12-07 Miraial Kk Single-wafer storing container and shock absorption supporting member used for the same
US7780440B2 (en) 2004-10-19 2010-08-24 Canon Anelva Corporation Substrate supporting/transferring tray
JP2019057366A (en) * 2017-09-19 2019-04-11 住友金属鉱山株式会社 Electrode molding die, and manufacturing method of electrode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7780440B2 (en) 2004-10-19 2010-08-24 Canon Anelva Corporation Substrate supporting/transferring tray
JP2006332278A (en) * 2005-05-25 2006-12-07 Miraial Kk Single-wafer storing container and shock absorption supporting member used for the same
JP4644035B2 (en) * 2005-05-25 2011-03-02 ミライアル株式会社 Single wafer storage container
JP2019057366A (en) * 2017-09-19 2019-04-11 住友金属鉱山株式会社 Electrode molding die, and manufacturing method of electrode

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