JPH08190878A - Electron source driving device and image forming apparatus using the electron source - Google Patents

Abstract

(57) [Abstract] [PROBLEMS] To provide a driving device for an electron source that solves the problems caused by conventional wiring materials and elements and stably emits electrons, and an image forming apparatus using the electron source. To aim. A plurality of surface-conduction type electron-emitting devices 1002 are arranged in a matrix, and one terminal of the surface-conduction type electron-emitting devices arranged in the same row is connected to a common row-direction wiring of the row, and the same. A driving device for an electron source configured by connecting the other terminal of the surface conduction electron-emitting device laid out in a column to a common column direction wiring of the column,
A plurality of signal input terminals "A" for applying a drive voltage to the row-direction wiring and the column-direction wiring, and a terminal "B" of each wiring provided corresponding to each of the plurality of signal input terminals
And a terminal circuit by a resistor, a voltage divider circuit, a clamp circuit by a diode, etc. for suppressing the reflected signal wave at the terminal terminal.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source driving device in which a plurality of surface conduction electron-emitting devices are arranged in a matrix, and an image forming apparatus using the electron source.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter abbreviated as FE), a metal / insulating layer / metal type (hereinafter abbreviated as MIM type), a surface conduction type electron emitting device, and the like.

As an example of the FE type, WPDyke & WWDol
an, “Field emission”, Advance in Electron Physic
s, 8,89 (1956) and CASpindt, “PHYSICAL Properties o
f thin-film field emission cathodes with moly bden
ium cones ”, J.Appl.Phys. 47, 5248 (1976) are known.

As an example of the MIM type, CAMead, “Operat
ion of tunnel-emission Devices, J.Appl.Phys., 32,64
6 (1961) is known.

An example of the surface conduction electron-emitting device is MIEl.
inson, Radio Eng. Electron Pys., 10, 1290, (1965).

In the surface conduction electron-emitting device, a small area thin film formed on a substrate is supplied with an electric current in parallel with the film surface,
It utilizes the phenomenon of electron emission.

As the surface conduction electron-emitting device, one using a SnO2 thin film by the above-mentioned Elinson, one using an Au thin film [G. Dittmer: "Thin Solid Fil"
ms ”, 9,317 (1972)], by In2O3 / SnO2 thin film
[M. Hartwell and CG Fonstad: “IEEE Trans. ED Con
f. ", 519 (1975)], a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, page 22 (1983)] and the like.

As a typical example of the element structure of these surface conduction electron-emitting devices, the above-mentioned Hartwell (Hartw) is shown in FIG.
A plan view of the device by ell) et al. In the figure, 30
Reference numeral 01 is a substrate, and 3004 is a conductive thin film made of a metal oxide formed by sputtering. Conductive thin film 3004
Is formed in an H-shaped plane shape as shown in the drawing.
The conductive thin film 3004 is subjected to an energization process called energization forming described later to obtain an electron emitting portion 3005.
Is formed. The interval L in the figure is 0.5 to 1 [mm],
W is set to 0.1 [mm]. For convenience of illustration, the electron emitting portion 3005 is shown as a rectangular shape in the center of the conductive thin film 3004, but this is a schematic one, and the actual position of the electron emitting portion faithfully represents the shape. Not necessarily.

In the surface conduction electron-emitting device described above, including the device by Hartwell et al., The electron-emitting portion 300 is formed by conducting an energization process called energization forming on the conductive thin film 3004 before emitting electrons.
It was common to form 5. That is, the energization forming energizes by applying a constant DC voltage to both ends of the conductive thin film 3004 or a DC voltage that is boosted at a very slow rate of, for example, about 1 V / min.
The conductive thin film 3004 is locally destroyed, deformed, or altered so that the electron emitting portion 30 is in an electrically high resistance state.
05 is to be formed. In addition, in a part of the conductive thin film 3004 which is locally destroyed, deformed or altered,
A crack occurs. When a convenient voltage is applied to the conductive thin film 3004 after the energization forming, electrons are emitted near the crack. The surface conduction electron-emitting device described above has an advantage that a large number of devices can be formed over a large area because it has a simple structure and is easy to manufacture. Therefore,
For example, as disclosed in Japanese Patent Laid-Open No. 64-31332 by the present applicant, a method for arranging and driving a large number of elements has been studied.

Regarding the application of the surface conduction electron-emitting device, for example, an image forming apparatus such as an image display apparatus and an image recording apparatus, a charged beam source, and the like have been studied.

Particularly, as an application to an image display device, for example, as disclosed in US Pat. No. 5,066,883 and Japanese Patent Laid-Open No. 2-257551 by the present applicant,
An image display device using a combination of a surface conduction type emission device and a phosphor that emits light when irradiated with an electron beam has been studied. The image display device using such a combination of the surface conduction electron-emitting device and the phosphor is expected to have better characteristics than other conventional image display devices. For example, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle, even compared with liquid crystal display devices that have become popular in recent years.

[0012]

DISCLOSURE OF THE INVENTION The inventors of the present application have made various materials including those described in the above-mentioned conventional examples.
We have tried surface-conduction type electron-emitting devices with manufacturing method and structure. Furthermore, research has been conducted on a multi-electron beam source in which a large number of surface conduction electron-emitting devices are arranged, and an image display device to which the multi-electron beam source is applied.

The inventors of the present application have tried to make a multi-electron beam source by the electronic wiring method shown in FIG. 16, for example. That is, it is a multi-electron beam source in which a large number of surface conduction electron-emitting devices are arranged two-dimensionally and these devices are arranged in a matrix as shown in the drawing.

In the figure, 4001 schematically shows a surface conduction electron-emitting device, 4002 shows row-direction wiring, and 4003 shows column-direction wiring. The row wiring 4002 and the column wiring 4003 actually have a finite electric resistance, but in the figure, the wiring resistances 4004 and 400
Shown as 5. The wiring method as described above will be referred to as simple matrix wiring here. Although a 6 × 6 matrix is shown for convenience of illustration, the size of the matrix is not limited to this. For example, in the case of a multi-electron beam source for an image display device, desired image display is performed. This is to arrange and wire the elements that are sufficient.

In the multi-electron beam source in which the surface conduction electron-emitting devices are wired in a simple matrix as described above, appropriate electric signals are applied to the row direction wirings 4002 and the column direction wirings 4003 in order to output a desired electron beam. For example, in order to drive the surface conduction electron-emitting device of any one row in the matrix, the selection voltage Vs is applied to the row direction wiring 4002 of the selected row, and at the same time, the row direction wiring of the non-selected row is applied. The non-selection voltage Vns is applied to 4002. In synchronization with this, a drive voltage Ve for outputting an electron beam is applied to the column-direction wiring 4003. According to this method, if the voltage drop due to the wiring resistors 4004 and 4005 is ignored, the surface conduction electron-emitting device of the selected row has (Ve-V).
The voltage of (s) is applied, and the voltage of (Ve-Vns) is applied to the surface conduction electron-emitting devices in the non-selected rows. Ve,
If Vs and Vns are set to appropriate voltages, an electron beam with a desired intensity should be output only from the surface conduction electron-emitting devices in the selected row, and different driving voltage is applied to each of the column-direction wirings. When Ve is applied, an electron beam of different intensity should be output from each of the elements in the selected row. Further, since the response speed of the surface conduction electron-emitting device is high, the length of time for which the electron beam is output can be changed by changing the length of time for applying the drive voltage Ve.

Therefore, the multi-electron beam source in which the surface conduction electron-emitting devices are wired in a simple matrix has various applications. For example, if an electric signal according to image information is appropriately applied, an electron for an image display device can be obtained. It can be preferably used as a source.

However, the electron beam source in which the surface conduction electron-emitting devices are simply arranged in matrix has the following problems in practice.

High-quality and high-definition image formation is desired in various image-forming panels to which the surface conduction electron-emitting device is applied, including the above-mentioned flat panel CRT. In order to realize this, for example, a method of using a large number of surface conduction electron-emitting devices having simple matrix wiring can be considered.
In this case, the number of rows and columns reaches hundreds to thousands, a very large number of device arrays are required, and it is desired that each surface conduction electron-emitting device emits a uniform amount of electrons. .

However, when these elements are applied to an image forming apparatus, m lines in the row direction (or the X direction) and n lines in the column direction (or the Y direction) are wired. When a simple matrix configuration is adopted in which an electron source in which a large number of surface-conduction type electron-emitting devices are arranged in a matrix by connecting to a pair of opposing device electrodes of the surface-conduction type electron-emitting device by , Row direction,
The waveform driven by the wiring material in the column direction and the connected element is reflected on the wiring.

Not only the drive waveform is disturbed by this reflection, but also the problem that the load of the drive device due to the absorption of the reflected current, the adverse effect on the surface conduction electron-emitting device, unnecessary electromagnetic radiation, unnecessary electron emission, etc. are caused. is there.

The present invention has been made in view of the above conventional example, and solves the problems caused by such wiring materials and elements, and uses an electron source driving device and a stable electron emission device. It is an object of the present invention to provide an image forming apparatus having the above configuration.

Another object of the present invention is to use an electron source drive device and an electron source drive device capable of suppressing reflected waves of a signal driving each of a plurality of surface conduction electron-emitting devices arranged in a matrix. To provide the image forming apparatus.

Another object of the present invention is to provide a driving device for an electron source capable of suppressing undershoot or overshoot of a signal for driving each of a plurality of surface conduction electron-emitting devices arranged in a matrix. An object is to provide an image forming apparatus using an electron source.

Another object of the present invention is to use an electron source driving device and an electron source which can eliminate delay of signals for driving a plurality of surface conduction electron-emitting devices arranged in a matrix. An object is to provide an image forming apparatus.

Another object of the present invention is to provide a driving device for an electron source capable of reducing power consumption due to a signal for driving each of a plurality of surface conduction electron-emitting devices arranged in a matrix, and an image using the electron source. To provide a forming apparatus.

Another object of the present invention is to use a driving device of an electron source and a device for driving the electron source in which noise resistance of a signal for driving each of a plurality of surface conduction electron-emitting devices arranged in a matrix is enhanced. An object is to provide an image forming apparatus.

[0027]

In order to achieve the above object, an electron source driving apparatus of the present invention has the following configuration. That is, a plurality of surface-conduction type electron-emitting devices are arranged in a matrix, and one terminal of the surface-conduction type electron-emitting devices arranged in the same row is connected to a common row-direction wiring of the row, and is connected to the same column. A driving device for an electron source configured by connecting the other terminal of the laid-out surface conduction electron-emitting device to a common column-direction wiring of the column, wherein a driving voltage is applied to the row-direction wiring and the column-direction wiring. A plurality of signal input terminals for applying a voltage, a terminal terminal of each wiring provided corresponding to each of the plurality of signal input terminals, and an additional circuit for suppressing a reflected signal wave at the terminal terminal. Have.

[0028]

In the above structure, signals are input from a plurality of signal input terminals for applying a driving voltage to the row-direction wirings and the column-direction wirings, and the wirings are provided corresponding to each of the plurality of signal input terminals. At the terminating terminal, the input signal is stabilized by an additional circuit that suppresses at least the reflected signal wave, and reflection, undershoot, overshoot, or the like of the signal at the terminal is suppressed.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings.

FIG. 1 is a diagram showing a part of a display driving portion of an image display device using the surface conduction electron-emitting device of this embodiment.

(1) FIG. 3 shows a portion indicated by "A" in FIG.
Insert the resistor circuit of and leave nothing in the “B” part. As a result, it becomes possible to delay the transmission response of the drive waveform, suppress unnecessary undershoot and overshoot, and stably drive these elements.

(2) The resistance circuit of FIG. 3 is inserted in the portion "A" of FIG. 1, and the resistance circuit of FIG. 4 is inserted in the portion "B". As a result, it becomes possible to delay the transmission response of the driving waveform, suppress unnecessary undershoot and overshoot, reduce the reflected wave, and stably drive the element.

(3) The resistance circuit of FIG. 3 is inserted in the portion "A" of FIG. 1, and the resistance circuit of FIG. 5 is inserted in the portion "B". This makes it possible to delay the transmission response of the drive waveform, suppress unnecessary undershoot and overshoot, and reduce the reflected wave to stably drive the element.

(4) The resistor circuit of FIG. 3 is inserted in the portion "A" of FIG. 1, and the resistor and capacitor of FIG. 6 are connected to the portion "B". This delays the transmission response of the drive waveform, suppresses unnecessary undershoot and overshoot, and reduces the reflected wave. And (2),
Compared with the case of (3), it became possible to drive stably with less power consumption.

(5) The resistor circuit of FIG. 3 is inserted in the portion "A" of FIG. 1, and the resistor and capacitor of FIG. 7 are connected in the portion "B". This delays the transmission response of the drive waveform, suppresses unnecessary undershoot and overshoot, and reduces the reflected wave. Also, (2), (3)
Compared with the case of 1, it is possible to drive stably with less power consumption.

(6) The resistance circuit of FIG. 3 is inserted in the portion "A" of FIG. 1, and the resistance voltage dividing circuit of FIG. 8 is connected to the portion "B". As a result, the transmission response of the drive waveform is delayed, unnecessary undershoot and overshoot are suppressed, the reflected wave can be reduced without affecting the transmission delay time, and stable driving is enabled.

(7) The resistance circuit of FIG. 3 is inserted in the portion “A” of FIG. 1, and the circuit of FIG. 9 or FIG. 10 is inserted in the portion “B”.
Connect the circuit of. This delays the transmission response of the drive waveform, suppresses unnecessary undershoot and overshoot, and reduces the reflected wave without affecting the transmission delay time. This consumes less power than the case (6) and can be driven stably.

(8) The resistance circuit of FIG. 3 is inserted in the portion "A" of FIG. 1, and the diode circuit of FIG. 11 is connected to the portion "B". As a result, the transmission response of the drive waveform can be delayed, and unnecessary undershoot, overshoot, and external noise can be suppressed to the extent that they do not hinder the operation. This enables stable driving.

(9) The resistance circuit of FIG. 3 is inserted in the portion “A” of FIG. 1, and the diode circuit of FIG. 12 is connected in the portion “B”. As a result, the transmission response of the drive waveform can be delayed, and unnecessary undershoot, overshoot, and external noise can be suppressed to the extent that they do not hinder the operation. You can also design without considering line impedance,
It became possible to drive stably.

(10) The resistance circuit of FIG. 3 is inserted in the portion “A” of FIG. 1, and the operational amplifier circuit of FIG. 13 is connected to the portion “B”. This can delay the transmission response of the drive waveform. Further, it becomes possible to stably drive by referring to an arbitrary voltage source and pressurizing the wiring length.

(11) The resistance circuit of FIG. 3 is inserted in the portion “A” of FIG. 1, and the circuit of FIG. 14 is connected to the portion “B”. As a result, the transmission response of the drive waveform is delayed and the drive waveform is amplified even at the long end of the wiring, whereby unnecessary undershoot, overshoot, and external noise can be suppressed to the extent that they do not hinder the operation. It became possible to drive the circuit stably.

(12) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the resistance circuit of FIG. 4 is connected to the "B" portion.
As a result, it is possible to suppress unnecessary undershoot and overshoot, reduce reflected waves, and stably drive the element.

(13) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the resistance circuit of FIG. 5 is connected to the "B" portion.
As a result, unnecessary undershoot and overshoot can be suppressed, reflected waves can be reduced, and the element can be driven stably.

(14) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the circuit of FIG. 6 is connected to the "B" portion. As a result, unnecessary undershoot and overshoot can be suppressed, and reflected waves can be reduced. As a result, power consumption can be reduced and stable driving can be performed as compared with the cases (12) and (13) described above.

(15) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the circuit of FIG. 7 is connected to the "B" portion. As a result, unnecessary undershoot and overshoot can be suppressed, and reflected waves can be reduced. Compared with the cases (12) and (13) described above, the power consumption can be reduced and stable driving can be performed.

(16) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the resistance voltage dividing circuit of FIG. 8 is connected to the "B" portion. As a result, unnecessary undershoot and overshoot can be suppressed, and the transmission delay time is not affected,
It became possible to drive stably by reducing reflected waves.

(17) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the circuit of FIG. 9 or 10 is connected to the "B" portion. As a result, unnecessary undershoot and overshoot can be suppressed, and the reflected wave can be reduced without affecting the transmission time delay time. This allows
Compared with the case of (16), it became possible to drive stably with less power consumption.

(18) The portion "A" in FIG. 1 is directly connected as shown in FIG. 2, and the diode circuit shown in FIG. 11 is connected to the portion "B". Thereby, unnecessary undershoot, overshoot, and external noise can be suppressed to the extent that they do not hinder, and stable driving can be performed.

(19) The portion "A" of FIG. 1 is directly connected as shown in FIG. 2, and the diode circuit of FIG. 12 is connected to the portion "B". As a result, unnecessary undershoot, overshoot, and external noise can be suppressed to the extent that they do not hinder. Furthermore, it can be designed without considering the line impedance. For this reason, stable driving becomes possible.

(20) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2, and the operational amplifier circuit of FIG. 13 is connected to the "B" portion. As a result, each element can be stably driven by referring to an arbitrary voltage source and pressurizing the wiring length.

(21) The "A" portion of FIG. 1 is directly connected as shown in FIG. 2 and the circuit of FIG. 14 is connected to the "B" portion. With this, by amplifying the drive waveform even at the long end of the wiring, unnecessary undershoot, overshoot, and external noise can be suppressed to the extent that they do not hinder the operation, and each element can be driven stably. it can.

(Structure and Manufacturing Method of Display Panel) Next, the structure and manufacturing method of the display panel of the image display apparatus to which the present embodiment is applied will be described with reference to specific examples.

FIG. 17 is a perspective view of a display panel used in this embodiment, in which a part of the panel is cut away to show the internal structure.

In the figure, 1005 is a rear plate, and 1006.
Is a side wall, 1007 is a face plate, and 1005
˜1007 form an airtight container for maintaining a vacuum inside the display panel. When assembling an airtight container, it is necessary to seal the joints of each member in order to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in the atmosphere or nitrogen atmosphere, Sealing was achieved by firing at 400-500 degrees for 10 minutes or more. The method of evacuating the inside of the airtight container will be described later.

The rear plate 1005 has a substrate 1001.
Are fixed, but N × M surface conduction electron-emitting devices 1002 are formed on the substrate 1001 (N, M).
Is a positive integer of 2 or more and is appropriately set according to the target number of display pixels. For example, in a display device intended for high-definition television display, N = 3000, M
It is desirable to set a number of 1000 or more. In this example, N = 3072 and M = 1024).
The N × M surface conduction electron-emitting devices are simple matrix wiring by M row direction (X direction) wirings 1003 and N column direction (Y direction) wirings 1004. Here, the part constituted by 1001 to 1004 is called a multi-electron beam source. Regarding the manufacturing method and structure of the multi-electron beam source, in this embodiment described in detail later, the multi-electron beam source substrate 1001 is fixed to the rear plate 1005 of the airtight container. When the substrate 1001 of 1 has sufficient strength, the substrate 1001 itself of the multi-electron beam source may be used as the rear plate of the airtight container.

A fluorescent film 1008 is formed on the lower surface of the face plate 1007. Since the present embodiment is a color display device, a CR film is provided on the fluorescent film 1008.
Phosphors of three primary colors of red, green and blue used in the field of T are separately coated. The phosphor of each color is, for example, as shown in FIG.
As shown in (a), the stripes are separately coated, and a black conductor 1010 is provided between the stripes of the phosphor. The purpose of providing the black conductor 1010 is to prevent the display color from deviating even if the irradiation position of the electron beam is slightly deviated, and to prevent the reflection of external light to prevent the deterioration of the display contrast. Therefore, this is to prevent the fluorescent film from being charged up by the electron beam. Although graphite was used as a main component for the black conductor 1010, other materials may be used as long as they are suitable for the above purpose.

The method of separately coating the phosphors of the three primary colors is not limited to the stripe-shaped arrangement shown in FIG. 18 (a). For example, the delta arrangement or the arrangement shown in FIG. 18 (b) is used. Other arrangements may be used.

In the case of producing a monochrome display panel, a monochromatic phosphor material may be used for the phosphor film 1008, and a black conductive material may not necessarily be used. Further, on the surface of the fluorescent film 1008 on the rear plate side,
A metal back 1009 known in the field of CRTs is provided. The purpose of providing the metal back 1009 is to provide the fluorescent film 1.
In order to specularly reflect a part of the light emitted by 008 to improve the light utilization rate, to protect the fluorescent film 1008 from the collision of negative ions, and to act as an electrode for applying an electron beam accelerating voltage. , To act as a conductive path for excited electrons in the fluorescent film 1008. This metal back 1009 was formed by a method of forming a fluorescent film 1008 on a face plate substrate 1007, smoothing the surface of the fluorescent film, and vacuum-depositing A1 (aluminum) on the surface. The metal back 1009 is not used when a low voltage phosphor material is used for the phosphor film 1008.

Although not used in this embodiment, for the purpose of applying an accelerating voltage and improving the conductivity of the phosphor film, a space between the face plate substrate 1007 and the phosphor film 1008 is provided.
For example, a transparent electrode made of ITO may be provided.

Further, Dx1 to Dxm and Dy1 to Dyn and Hv
Is an air-tight electrical connection terminal provided to electrically connect the display panel to the electrical circuits described in FIGS. 1 to 14. Dx1 to Dxm are electrically connected to the row direction wiring 1003 of the multi electron beam source, Dy1 to Dyn are electrically connected to the column direction wiring 1004 of the multi electron beam source, and Hv is electrically connected to the metal back 1009 of the face plate.

To evacuate the inside of the airtight container to a vacuum, after assembling the airtight container, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the airtight container is raised to the power of 10 minus 7 [To
Evacuate to a vacuum degree of about [rr]. After that, the exhaust pipe is sealed, but in order to maintain the degree of vacuum in the airtight container, a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing. The getter film is, for example, Ba
Is a film formed by heating a getter material containing as a main component by a heater or high-frequency heating and vapor deposition, and the adsorption action of the getter film causes the inside of the airtight container to be 1 × 10 −5 to 1 × 10 −7 [Torr]. ] The degree of vacuum is maintained.

The basic structure and manufacture of the display panel of this embodiment have been described above.

Next, a method of manufacturing the multi-electron beam source used in the display panel of the above embodiment will be described. The electron beam source used in the image display device of the present invention is not limited to the material, shape, or manufacturing method of the surface conduction electron-emitting device as long as it is an electron source in which surface conduction electron-emitting devices are wired in a simple matrix. However, the inventors of the present application have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have excellent electron-emitting characteristics and can be easily manufactured. Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance and large-screen image display device. Therefore, in the display panel of the above embodiment, the surface conduction electron-emitting device in which the electron emitting portion or its peripheral portion is formed of the fine particle film is used. Therefore, the basic configuration, manufacturing method, and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron beam source in which a large number of devices are wired in simple matrix will be described.

<Preferable Device Structure and Manufacturing Method of Surface Conduction Type Emitting Device> Typical structures of the surface conduction type emitting device in which the electron emitting portion or its peripheral portion is formed of a fine particle film include a planar type and a vertical type. There are different types.

<Plane Type Surface Conduction Type Emitting Element> First, the element structure and manufacturing method of the plane type surface conduction type emitting element will be described.

FIG. 19 is a plan view (a) and a cross-sectional view (b) thereof for explaining the structure of a flat surface conduction electron-emitting device.

In the figure, 1101 is a substrate, 1102 and 110
3 is a device electrode, 1104 is a conductive thin film, 1105 is an electron emission portion formed by energization forming processing, 1113.
Is a thin film formed by energization activation treatment. Here, as the substrate 1101, for example, various glass substrates such as quartz glass and soda lime glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO2 is laminated on the above various substrates. A substrate or the like can be used.

The device electrodes 1102 and 1103 provided on the substrate 1101 so as to face each other in parallel with the substrate surface are made of a conductive material. For example, N
i, Cr, Au, Mo, W, Pt, Ti, Cu, Pd,
A material such as Ag or the like, an alloy of these metals, a metal oxide such as In2O3-SnO2, a semiconductor such as polysilicon, or the like may be appropriately selected and used. Such an element electrode 110
2, 1103 can be easily formed by using a film forming technique such as vacuum deposition and a patterning technique such as photolithography and etching, but other methods (for example, printing technique) are used. It can be formed.

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode interval L is designed by selecting an appropriate value from the range of several hundred angstroms to several hundreds of micrometers, but it is preferable that the electrode interval L is more than several micrometers for application to a display device. It is in the range of several tens of micrometers. Further, the thickness d of the device electrodes 1102 and 1103 is usually selected from an appropriate value within the range of several hundred angstroms micrometers.

A fine particle film is used for the conductive thin film 1104. The fine particle film described here is a film containing various kinds of fine particles as constituent elements (including an island-shaped aggregate).
Refers to. When the fine particle film is microscopically examined, usually, a structure in which individual fine particles are arranged apart from each other, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other are observed.

The particle diameter of the fine particles used in the fine particle film of this embodiment is in the range of several angstroms to several thousand angstroms, and the range of 10 angstroms to 200 angstroms is particularly preferable. Further, the film thickness of the fine particle film is appropriately set in consideration of various conditions as described below. That is, the device electrode 1
102 or 1103, a condition necessary for good electrical connection, a condition necessary for favorably performing the energization forming described below, a condition necessary for setting the electric resistance of the fine particle film itself to an appropriate value described below. And so on. In particular,
The thickness is set within the range of several angstroms to several thousand angstroms, with 10 angstroms to 500 angstroms being particularly preferable.

Materials that can be used to form the fine particle film include, for example, Pd, Pt, Ru, Ag, and A.
u, Ti, In, Cu, Cr, Fe, Zn, Sn, T
Metals such as a, W, Pb, PdO, Sn
O2, In2O3, PbO, Sb2O3 and other oxides, HfB2, ZrB2, LaB6, CeB6, Y
Carbides such as B4 and GdB4, TiN, Z
Examples include nitrides such as rN and HfN, semiconductors such as Si and Ge, and carbon.
It is appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film, but its sheet resistance value is 1
It was set to fall within the range of 0 to the power of 7 to 10 7 [ohm / □].

The conductive thin film 1104 and the device electrode 110
Since it is desirable that the 2 and 1103 are electrically connected well, they have a structure in which some of them overlap each other. In the example of FIG. 19, the manner of overlapping is such that the substrate, the device electrode, and the conductive thin film are stacked in this order from the bottom.
In some cases, the substrate, the conductive thin film, and the device electrode may be laminated in this order from the bottom.

Further, the electron emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has an electrically higher resistance than the surrounding conductive thin film. The crack is formed by subjecting the conductive thin film 1104 to a later-described energization forming process. Fine particles having a particle diameter of several angstroms to several hundred angstroms may be arranged in the cracks. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, the electron-emitting portion is schematically shown in FIG.

The thin film 1113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing the energization activation process described later after the energization forming process.

The thin film 1113 is made of single crystal graphite, polycrystalline graphite, amorphous carbon, or a mixture thereof, and the film thickness is 500 [angstrom] or less, but 300 [angstrom] or less. Is more preferable. Since it is difficult to accurately illustrate the actual position and shape of the thin film 1113, the thin film 1113 is schematically shown in FIG. Further, in the plan view (a), an element in which a part of the thin film 1113 is removed is shown.

The basic structure of a preferable element has been described above, but the following elements were used in the examples.

That is, soda lime glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of the device electrode was 1000 [angstrom], and the electrode interval L was 2 [micrometer]. Pd or PdO is used as the main material of the fine particle film, and the thickness of the fine particle film is about 100 [angstrom] and the width W is 1
00 [micrometer].

Next, a method for manufacturing a suitable flat surface conduction electron-emitting device will be described.

20 (a)-(c) and FIG. 21 (a).
19B is a sectional view for explaining the manufacturing process of the surface conduction electron-emitting device, and the notation of each member is the same as that in FIG.

(1) First, as shown in FIG.
The device electrodes 1102 and 1103 are formed on the substrate 1101. In forming the device electrodes 1102 and 1103, the substrate 1101 is thoroughly washed with a detergent, pure water, and an organic solvent in advance, and then the device electrodes 1102 and 1103 are formed.
The material of No. 3 is deposited (a vacuum deposition technique such as a vapor deposition method or a sputtering method may be used as the deposition method). After that, the deposited electrode material is patterned by using a photolithography etching technique, and the pattern shown in FIG.
A pair of device electrodes (1102 and 1103) shown in (a).
To form.

(2) Next, a conductive thin film 1104 is formed as shown in FIG. This conductive thin film 1104
In forming the film, first, the substrate of (a) is coated with an organic metal solution, dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography etching. Here, the organometallic solvent is a solution of an organometallic compound whose main element is the material of the fine particles used for the conductive thin film (specifically, Pd was used as the main element in this example. In the example, the dipping method was used as the coating method, but other methods such as a spinner method or a spray method may be used).

Further, as a method for forming a conductive thin film made of a fine particle film, other than the method of applying the organic metal solution used in this embodiment, for example, a vacuum vapor deposition method, a sputtering method or a chemical vapor deposition method. In some cases, etc. are used.

(3) Next, as shown in FIG. 7C, the forming power supply 1110 to the device electrodes 1102 and 11
An appropriate voltage is applied during the period 03 to perform an energization forming process to form the electron emitting portion 1105. This energization forming treatment means a conductive thin film 11 made of a fine particle film.
This is a process of energizing 04, appropriately destroying, deforming, or altering a part thereof to change the structure suitable for electron emission. Of the conductive thin film made of the fine particle film, the thin film 1 is formed in the portion changed to the structure suitable for electron emission (that is, the electron emission portion 1105).
Appropriate cracks have been formed in 104. It should be noted that the electric resistance measured between the device electrodes 1102 and 1103 is significantly increased after the electron emission portion 1105 is formed, as compared with before the electron emission portion 1105 is formed.

In order to explain this energizing method in more detail, FIG. 22 shows an example of a voltage waveform for applying a voltage from the forming power supply 1110. When forming a conductive thin film made of a fine particle film, a pulsed voltage is preferable, and in the case of the present embodiment, as shown in FIG.
A triangular pulse having a pulse width T1 was continuously applied at a pulse interval T2. At that time, the peak value Vpf of the triangular wave pulse is
The pressure was sequentially increased.

In this embodiment, for example, the following pulse voltage was applied in a vacuum atmosphere of about 10 −5 [torr]. In addition, the electron emission unit 11
Monitor pulse Pm for monitoring the formation state of 05
Was inserted between triangular wave pulses at appropriate intervals, and the current value flowing at that time was measured by an ammeter 1111.

In the embodiment, for example, in a vacuum atmosphere of about 10 −5 [torr], for example, the pulse width T1 is 1 [millisecond], the pulse interval T2 is 10 [millisecond], and the peak value Vpf is 0.1 [V] for each pulse
We stepped up each. Then, the monitor pulse Pm was inserted once every five pulses of the triangular wave were applied. The voltage Vpm of the monitor pulse is set to 0.1 [V] because of the adverse effect on the forming process. Then, when the electric resistance between the element electrodes 1102 and 1103 becomes 1 × 10 6 [ohm], that is, when the monitor pulse is applied, the current measured by the ammeter 1111 is 1 × 10 minus 7.
When the power became less than the power [A], the energization for the forming process was terminated.

The above method is a preferred method for the surface conduction electron-emitting device of this embodiment, and the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the device electrode spacing L is changed. In this case, it is desirable to appropriately change the energization conditions accordingly.

(4) Next, as shown in FIG.
From the activation power source 1112 to the device electrodes 1102 and 1103
Appropriate voltage is applied between the two to perform energization activation treatment,
The electron emission characteristics are improved. This energization activation process is
This is a process of energizing the electron-emitting portion 1105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof (in the figure, a deposit made of carbon or a carbon compound). Is schematically shown as the member 1113). By performing such energization activation treatment, the emission current at the same applied voltage can typically be increased 100 times or more as compared with before activation.

Specifically, 10 to the fourth power or 1
In a vacuum atmosphere within the range of 0 minus 5 [torr],
By periodically applying a voltage pulse, carbon or a carbon compound originating from an organic compound existing in a vacuum atmosphere is deposited. The deposit 1113 is one of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a film thickness of 500 [angstroms] or less, more preferably 300 [angstroms] or less.

In order to describe the energization method in more detail, FIG. 23A shows an example of an appropriate voltage waveform applied from the activation power supply 1112. In this embodiment, the energization activation process is performed by periodically applying a rectangular wave having a constant voltage. Specifically, the rectangular wave voltage Vac is 14 [V],
The pulse width T3 is 1 [millisecond] and the pulse interval T4 is 10
[Milliseconds]. The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of this embodiment, and when the design of the surface conduction electron emission device is changed, it is desirable to appropriately change the conditions accordingly.

Reference numeral 1114 shown in FIG. 21 (a) is an anode electrode for capturing the emission current Ie emitted from the surface conduction electron-emitting device, to which a DC high voltage power supply 1115 and an ammeter 1116 are connected ( When the substrate 1101 is incorporated into a display panel and then activated, the fluorescent surface of the display panel is used as the anode electrode 1114). While the voltage is applied from the activation power supply 1112, the emission current Ie is measured by the ammeter 1116 to monitor the progress of the energization activation process, and the activation power supply 1
Control the operation of 112. An example of the emission current Ie measured by the ammeter 1116 is shown in FIG. 23B. When the pulse voltage is started to be applied from the activation power supply 1112, the emission current Ie increases with the passage of time, but the emission current Ie becomes saturated. Will almost never increase. Thus, the emission current Ie
Is almost saturated, the voltage application from the activation power supply 1112 is stopped, and the energization activation process is terminated.

The above energization conditions are preferable conditions for the surface-conduction type electron-emitting device of this embodiment, and when the design of the surface-conduction type electron-emitting device is changed, the conditions should be changed accordingly. desirable.

As described above, the plane type surface conduction electron-emitting device shown in FIG. 21 (b) was manufactured.

(Vertical Surface Conduction Type Emitting Element) Next, another typical structure of the surface conduction type emitting element in which the electron emitting portion or its periphery is formed of a fine particle film, that is, a vertical type surface conduction type emitting element. The configuration of will be described.

FIG. 24 is a schematic sectional view for explaining the basic structure of the vertical type.

In the figure, reference numeral 1201 designates substrates 1202 and 120.
3 is an element electrode, 1206 is a step forming member, 1204 is a conductive thin film using a fine particle film, 1205 is an electron emitting portion formed by an energization forming process, and 1213 is a thin film formed by an energization activation process. This vertical type electron-emitting device is different from the planar type described above in that the device electrode 1
One of (2022) 202 and 1203 is provided on the step forming member 1206, and the conductive thin film 1204 is provided.
Covers the side surface of the step forming member 1206. Therefore, in the flat type shown in FIG.
Is the step height L of the step forming member 1206 in the vertical type.
is set as s. The substrate 1201 and the device electrode 12
02 and 1203, a conductive thin film 120 using a fine particle film
For 4, it is possible to use the materials listed in the description of the planar type in the same manner. Further, the step forming member 12
For 06, an electrically insulating material such as SiO2 is used.

Next, a method of manufacturing a vertical type surface conduction electron-emitting device will be described.

25A to 25F are cross-sectional views for explaining the manufacturing process, and the notation of each member is the same as that in FIG.

(1) First, as shown in FIG.
A device electrode 1203 is formed on the substrate 1201.

(2) Next, as shown in FIG. 10B, an insulating property for forming the step forming member is laminated. As the insulating phase, for example, SiO2 may be laminated by a sputtering method.
For example, another film forming method such as a vacuum vapor deposition method or a printing method may be used.

(3) Next, as shown in FIG. 7C, the device electrode 1202 is formed on the insulating layer.

(4) Next, as shown in FIG. 10D, a part of the insulating layer is removed by using, for example, an etching method to expose the device electrode 1203.

(5) Next, as shown in FIG. 7E, a conductive thin film 1204 using a fine particle film is formed. To form the conductive thin film 1204, a film forming technique such as a coating method may be used as in the case of the flat type.

(6) Next, as in the case of the above-mentioned flat type, the energization forming process is performed, and the electron emitting portion 1205 is formed.
(The same process as the planar energization forming process described with reference to FIG. 19C may be performed).

(7) Next, as in the case of the flat type,
The energization activation process is performed to deposit carbon or a carbon compound in the vicinity of the electron emission portion (the same process as the planar energization activation process described with reference to FIG. 21A may be performed).

As described above, as shown in FIG.
A vertical type surface conduction electron-emitting device was manufactured.

(Characteristics of Surface Conduction Type Emitting Element Used in Display Device) The element structure and manufacturing method of the plane type and vertical type surface conduction type emitting element have been described above. I will describe.

FIG. 26 shows typical examples of (emission current Ie) vs. (device applied voltage Vf) characteristics and (device current If) vs. (device applied voltage Vf) characteristics of the device used in the display device. . Note that the emission current Ie is significantly smaller than the device current If and is difficult to illustrate on the same scale, and these characteristics are changed by changing design parameters such as the size and shape of the device. Therefore, the two graphs are shown in arbitrary units. The element used in the display device has the following three characteristics regarding the emission current Ie.

First, when a voltage larger than a certain voltage (which is called a threshold voltage Vth) is applied to the element, the emission current Ie rapidly increases. On the other hand, at a voltage lower than the threshold voltage Vth, the emission current Ie increases. Almost no Ie is detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the voltage Vf applied to the device, the emission current Ie at the voltage Vf.
The size of e can be controlled.

Thirdly, since the response speed of the current Ie emitted from the element is fast with respect to the voltage Vf applied to the element, the charge amount of the electrons emitted from the element depends on the length of time the voltage Vf is applied. You can control.

Due to the above-mentioned characteristics, the surface conduction electron-emitting device could be preferably used in the display device. For example, in the display device in which a large number of elements are provided corresponding to the pixels of the display screen, the display can be performed by sequentially scanning the surface by using the first characteristic. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the driven element according to the desired light emission luminance, and the threshold voltage Vth is applied to the non-selected element.
Apply a voltage of less than. By sequentially switching the elements to be driven, it is possible to sequentially scan the display screen for display.

Further, since the emission brightness can be controlled by utilizing the second characteristic or the third characteristic, gradation display can be performed.

(Structure of multi-electron beam source in which a large number of elements are wired in a simple matrix) Next, the structure of a multi-electron beam source in which the above-mentioned surface conduction electron-emitting devices are arranged on a substrate and wired in a simple matrix will be described.

FIG. 27 is a plan view of the multi-electron beam source used for the display panel of FIG. Surface conduction electron-emitting devices similar to those shown in FIG. 19 are arranged on the substrate, and these devices are arranged in the row wiring electrode 100.
3 and the column-direction wiring electrodes 1004 are wired in a simple matrix. An insulating layer (not shown) is formed between the electrodes at the intersections of the row-direction wiring electrodes 1003 and the column-direction wiring electrodes 1004 to maintain electrical insulation.

FIG. 28 is a sectional view taken along the line AA ′ of FIG.
Shown in

The multi-electron source having such a structure has a row-direction wiring electrode 1003 and a column-direction wiring electrode 1 previously formed on the substrate.
004, an inter-electrode insulating layer (not shown), and the element electrodes of the surface conduction electron-emitting device and the conductive thin film are formed, and then each element is supplied with electricity through the row wiring electrodes 1003 and the column wiring electrodes 1004 to conduct electricity. It was manufactured by performing a forming treatment and an energization activation treatment.

FIG. 29 shows a display panel using the surface conduction electron-emitting device described above as an electron beam source so that image information provided from various image information sources such as television broadcasting can be displayed. It is a figure for showing an example of a constituted display.

In the figure, 2100 is a display panel and 2 is a display panel.
102 is a display panel drive circuit, 2102 is a display controller, 2103 is a multiplexer,
2104 is a decoder, 2105 is an input / output interface circuit, 2106 is a CPU, 2107 is an image generation circuit,
2108 and 2109 and 2110 are image memory interface circuits, 2111 is an image input interface circuit, 2112 and 2113 are TV signal receiving circuits, 21
Reference numeral 14 denotes an input unit (note that when the display device receives a signal including both video information and audio information such as a television signal, it naturally reproduces audio at the same time as displaying video. However, description of circuits, speakers, etc. relating to reception, separation, reproduction, processing, storage, etc. of audio information not directly related to the features of the present invention will be omitted).

The functions of the respective parts will be described below along the flow of the image signal.

First, the TV signal receiving circuit 2113 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication. The system of the TV signal to be received is not particularly limited, and various systems such as NTSC system, PAL system and SECAM system may be used. In addition, a TV signal (for example, MUSE method,
A so-called high-definition TV) is a signal source suitable for taking advantage of the display panel suitable for a large area and a large number of pixels. TV received by the TV signal receiving circuit 2113
The signal is output to the decoder 2104.

Further, the TV signal receiving circuit 2112 is a circuit for receiving a TV image signal transmitted by using a wired transmission system such as a coaxial cable or an optical fiber. Similar to the TV signal receiving circuit 2113, the TV signal system shown in the figure is not particularly limited, and the TV signal received by this circuit is also output to the decoder 2104. Also, the image input interface circuit 2111
Is a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner, and the captured image signal is output to the decoder 2104.

The image memory interface circuit 2
110 is a video tape recorder (hereinafter abbreviated as VTR)
The circuit for fetching the image signal stored in is output to the decoder 2104.
The image memory interface circuit 2109 is a circuit for capturing the image signal stored in the video disc, and the captured image signal is output to the decoder 2104.

Image memory interface circuit 2108
Is a circuit for capturing an image signal from a device that stores still image data, such as a so-called still image disc, and the captured still image data is output to the decoder 2104. The input / output interface circuit 2105 is
It is a circuit for connecting the display device to an external computer, a computer network, or an output device such as a printer. It is of course possible to input / output image data and character / graphic information, and in some cases, input / output control signals and numerical data between the CPU 2106 of the display device and the outside.

The image generation circuit 2107 receives image data, character / graphic information, or the CPU 210, which is input from the outside via the input / output interface circuit 2105.
6 is a circuit for generating display image data based on the image data and the character / graphic information output from FIG. Inside this circuit, for example, a rewritable memory for accumulating image data and character / graphic information, a read-only memory that stores image patterns corresponding to character codes, a processor for performing image processing, etc. And the circuits necessary for image generation are incorporated.

The display image data generated by this circuit is output to the decoder 2104, but in some cases, it can be output to an external computer network or printer via the input / output interface circuit 2105.

The CPU 2106 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image. For example, a control signal is output to the multiplexer 2103 to appropriately select or combine image signals to be displayed on the display panel. At that time, a control signal is generated to the display panel controller 2102 according to the image signal to be displayed, the screen display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines in one screen, etc. The operation of the display device is controlled as appropriate.

Image data or character / graphic information is directly output to the image generation circuit 2107, or an external computer or memory is accessed via the input / output interface circuit 2105. Enter the information. It should be noted that the CPU 2106 may of course be involved in work for other purposes. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, as described above, the computer may be connected to an external computer network via the input / output interface circuit 2105, and work such as numerical calculation may be performed in cooperation with an external device.

The input unit 2114 is the CPU 21
A user inputs an instruction program, data, or the like into 06. For example, various input devices such as a joystick, a bar code reader, and a voice recognition device can be used in addition to a keyboard and a mouse.
The decoder 2104 is a circuit for inversely converting various image signals input from the above 2107 to 2113 into three primary color signals, or luminance signals and I signals and Q signals.
Incidentally, it is desirable that the decoder 2104 has an image memory therein, as indicated by a dotted line in FIG. This is to handle a television signal that requires an image memory for reverse conversion, such as the MUSE method. In addition, the provision of the image memory makes it easy to display a still image. Alternatively, there is an advantage that image processing and editing such as image thinning, interpolation, enlargement, reduction, and composition can be easily performed in cooperation with the image generation circuit 2107 and the CPU 2106.

Further, the multiplexer 2103 has the C
The display image is appropriately selected based on the control signal input from the PU 2106. That is, the multiplexer 2103 selects a desired image signal from the inversely transformed other image signals input from the decoder 2104 and outputs it to the drive circuit 2101. In that case, by switching and selecting image signals within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen television. . The display panel controller 2102 is a circuit for controlling the operation of the drive circuit 2101 based on the control signal input from the CPU 2106.

First, regarding the basic operation of the display panel, for example, a signal for controlling the operation sequence of a power source (not shown) for driving the display panel is output to the drive circuit 2101. As a signal relating to the display panel driving method, for example, a signal for controlling a screen display frequency and a scanning method (for example, interlaced or non-interlaced) is supplied to the driving circuit 210.
Output to 1. In some cases, a control signal relating to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image may be output to the drive circuit 2101. The drive circuit 2101 is a circuit for generating a drive signal to be applied to the display panel 2100, and the image signal input from the multiplexer 2103 and the display panel controller 21.
It operates on the basis of a control signal inputted from 02.

The functions of the respective parts have been described above. With the configuration illustrated in FIG. 29, the display panel 2 displays image information sewn from various image information sources in this display device.
100 can be displayed.

That is, various image signals such as television broadcast are inversely converted by the decoder 2104, appropriately selected by the multiplexer 2103, and input to the drive circuit 2101. On the other hand, the display controller 2102 generates a control signal for controlling the operation of the drive circuit 2101 according to the image signal to be displayed. The drive circuit 2101 applies a drive signal to the display panel 2100 based on the image signal and the control signal. As a result, the image is displayed on the display panel 2100. These series of operations are performed by the CPU 21.
It is totally controlled by 06.

In the present display device, the image memory built in the decoder 2104 and the image generation circuit 21.
07 and the CPU 2106 are involved not only to display a selected one of a plurality of image information but also to enlarge, reduce, rotate, move, edge emphasize, thin out, and interpolate the displayed image information. It is also possible to perform image processing such as color conversion and aspect ratio conversion of images, and image editing such as combining, erasing, connecting, replacing, and fitting. Although not particularly mentioned in the description of this embodiment, a dedicated circuit for processing and editing audio information may be provided as in the case of the above-mentioned image processing and image editing.

Therefore, the display device is a display device for television broadcasting, a terminal device for a video conference, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor, and a game. It is possible to combine the functions of a machine with one unit, and has a very wide range of applications for industrial or consumer use.

Note that FIG. 29 shows only an example of the structure of a display device using a display panel having a surface conduction electron-emitting device as an electron beam source, and it is needless to say that it is not limited to this. Yes. For example, of the constituent elements in FIG. 29, circuits relating to functions that are unnecessary for the purpose of use may be omitted. On the contrary, the constituent elements may be added depending on the purpose of use. For example, when the display device is applied as a videophone, it is preferable to add a television camera, a voice microphone, an illuminator, a transmission / reception circuit including a modem, and the like to the constituent elements.

In the present display device, in particular, the display panel using the surface conduction electron-emitting device as the electron beam source can be easily thinned, so that the depth of the entire display device can be reduced. In addition, the display panel using surface-conduction type electron-emitting devices as the electron beam source can easily enlarge the screen, has high brightness, and has excellent viewing angle characteristics. It can be displayed with good quality.

The present invention may be applied to a system composed of a plurality of devices or an apparatus composed of a single device. The present invention can also be applied to the case where it is achieved by supplying a program for implementing the present invention to a system or an apparatus.

As described above, according to this embodiment, it is possible to suppress the signal that adversely affects the driving due to the wiring material and the electron source element, to stably drive the electron source element, and to obtain the high quality. The image can be displayed.

[0142]

As described above, according to the present invention, it is possible to solve the problems caused by wiring materials and elements and to stably emit electrons.

According to the present invention, it is possible to suppress the reflected wave of the signal driving each of the plurality of surface conduction electron-emitting devices arranged in a matrix.

According to the present invention, it is possible to suppress undershoot or overshoot of a signal that drives each of a plurality of surface conduction electron-emitting devices arranged in a matrix.

Further, according to the present invention, it is possible to eliminate the delay of the signal driving each of the plurality of surface conduction electron-emitting devices arranged in a matrix.

Further, according to the present invention, it is possible to reduce power consumption due to a signal for driving each of the plurality of surface conduction electron-emitting devices arranged in a matrix.

Further, according to the present invention, it is possible to enhance the noise resistance of the signal driving each of the plurality of surface conduction electron-emitting devices arranged in a matrix.

[0148]

[Brief description of drawings]

FIG. 1 is a diagram showing a partial configuration of a display panel in which surface conduction electron-emitting devices of this example are wired in a matrix.

FIG. 2 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 3 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 4 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

5 is a diagram showing an example of a circuit connected to a terminal "A" or "B" of FIG.

FIG. 6 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 7 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 8 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 9 is a diagram showing an example of a circuit connected to a terminal “A” or “B” in FIG. 1.

10 is a diagram showing an example of a circuit connected to a terminal "A" or "B" of FIG.

FIG. 11 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 12 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 13 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 14 is a diagram showing an example of a circuit connected to a terminal “A” or “B” of FIG. 1.

FIG. 15 is a plan view illustrating a conventional electron-emitting device.

FIG. 16 is a diagram for explaining a conventional example.

FIG. 17 is a perspective view of the image display device according to the embodiment of the present invention with a part of the display panel cut away.

FIG. 18 is a plan view illustrating a phosphor array on a face plate of a display panel.

19A and 19B are a plan view (a) and a cross-sectional view (b) of a flat-type display conduction-type emission device used in Examples.

FIG. 20 is a cross-sectional view showing a manufacturing process of a flat surface conduction electron-emitting device.

FIG. 21 is a cross-sectional view showing a manufacturing process of a flat surface conduction electron-emitting device.

FIG. 22 is a diagram showing applied voltage waveforms during energization forming processing.

FIG. 23 is a waveform (a) of applied voltage during energization activation processing,
It is a figure which shows the change (b) of emission current Ie.

FIG. 24 is a cross-sectional view of a vertical surface conduction electron-emitting device used in Examples.

FIG. 25 is a cross-sectional view showing a manufacturing process of a vertical surface conduction electron-emitting device.

FIG. 26 is a graph showing typical characteristics of the surface conduction electron-emitting device used in Examples.

FIG. 27 is a plan view of the substrate of the multi-electron beam source used in the examples.

FIG. 28 is a partial cross-sectional view of the substrate of the multi-electron beam source used in the examples.

FIG. 29 is a block diagram of a multi-function image display device that is an embodiment of the present invention.

[Explanation of symbols]

 1001 substrate 1002 surface conduction electron-emitting device 1003 X-direction wiring 1004 Y-direction wiring 1005 rear plate 1007 face plate 1008 fluorescent film

Claims (10)

[Claims] 1. A plurality of surface-conduction type electron-emitting devices are arranged in a matrix, and one terminal of the surface-conduction type electron-emitting devices arranged in the same line is connected to a common row-direction wiring of the line, A driving device of an electron source configured by connecting the other terminal of the surface conduction electron-emitting device laid out in the same column to a common column direction wiring of the column, wherein the row direction wiring and the column direction wiring are provided. A plurality of signal input terminals for applying a driving voltage to each of the plurality of signal input terminals, a terminal terminal of each wiring provided corresponding to each of the plurality of signal input terminals, and an addition for suppressing a reflected signal wave at the terminal terminal. A circuit for driving an electron source. 2. The additional circuit includes a resistor connected to the terminal terminal,
2. The driving device for an electron source according to claim 1, wherein the driving device is grounded via a resistor and a capacitor connected in series. 3. The additional circuit includes a resistor connected to the terminal terminal,
The driving device for an electron source according to claim 1, wherein the driving device is connected to a power supply line via a resistor and a capacitor which are connected in series. 4. The driving of the electron source according to claim 1, wherein the additional circuit is a circuit that connects a point where a power supply line and a ground are divided by a resistor and the terminal terminal. apparatus. 5. The additional circuit according to claim 1, wherein the additional circuit is a circuit that connects a point where a power supply line and a ground are divided by a resistor and the termination terminal through a capacitor. Driving device for electron source. 6. The additional circuit is a circuit that connects a point divided between a power supply line and a ground by a resistor and a capacitor, which are connected in series, and the terminal terminal. The drive device for the electron source according to claim 1. 7. The driving device for an electron source according to claim 1, wherein the additional circuit is a clamp circuit which is diode-connected between the terminal terminal and the ground. 8. The additional circuit is a circuit in which a diode whose one end is grounded and a diode whose one end is connected to a power supply line are connected to the termination terminal.
The drive unit for the electron source according to [1]. 9. The drive device for an electron source according to claim 1, wherein the additional circuit is a circuit in which an amplifier circuit is connected to the terminal terminal. 10. An image forming apparatus for forming an image by driving each of a plurality of electron sources by the electron source driving apparatus according to claim 1 in accordance with an image signal. Driving means for driving each of the plurality of surface conduction electron-emitting devices, and image forming means for forming a visible image by electrons emitted from each of the plurality of surface conduction electron-emitting devices driven by the driving means. An image forming apparatus comprising: