JPH0817745A - Heater - Google Patents
HeaterInfo
- Publication number
- JPH0817745A JPH0817745A JP14905394A JP14905394A JPH0817745A JP H0817745 A JPH0817745 A JP H0817745A JP 14905394 A JP14905394 A JP 14905394A JP 14905394 A JP14905394 A JP 14905394A JP H0817745 A JPH0817745 A JP H0817745A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- layer
- purity
- graphite
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ＣＶＤ処理装置
において半導体ウエハを直接加熱するためのヒータに係
り、特には、向上した可使寿命を有するヒータに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater for directly heating a semiconductor wafer in a semiconductor CVD processing apparatus, and more particularly to a heater having an improved service life.
【０００２】[0002]
【従来の技術】半導体化学気相成長（ＣＶＤ）処理装置
として、処理すべき半導体ウエハを所定の温度に直接加
熱するためのヒータを具備するものが知られている。半
導体ウエハは、離間・配置されたヒータにより裏面から
所定の温度に加熱される。2. Description of the Related Art As a semiconductor chemical vapor deposition (CVD) processing apparatus, one having a heater for directly heating a semiconductor wafer to be processed to a predetermined temperature is known. The semiconductor wafer is heated to a predetermined temperature from the back surface by heaters which are separated and arranged.
【０００３】このような半導体ウエハ直接加熱用ヒータ
の材料には、発熱機能を有することに加えて、ウエハの
汚染防止の目的から、極めて純度が高くかつ金属成分の
含有量が極めて低く保たれていることが要求される。ま
た、優れた耐食性及び耐熱性、並びにある程度の強度を
有することも要求される。これらの要件をすべて満足す
る材料は単体としてはほとんど存在せず、従来これら要
件をある程度満足するものとして、高純度のＳｉＣで被
覆された黒鉛が使用されてきた。The material for such a heater for directly heating a semiconductor wafer has an extremely high purity and a very low metal component content for the purpose of preventing contamination of the wafer in addition to having a heat generating function. Required to be present. Further, it is also required to have excellent corrosion resistance and heat resistance, and some strength. There are almost no materials that satisfy all of these requirements as a simple substance, and graphite that is coated with high-purity SiC has hitherto been used as one that satisfies these requirements to some extent.
【０００４】ＳｉＣ被覆黒鉛からなる従来のヒータは、
通常の黒鉛からなるヒータ本体を備え、その周囲がきわ
めて純度の高いＳｉＣからなる保護膜で覆われている。
このＳｉＣ被覆黒鉛は、加熱機能をヒータ本体の黒鉛が
担い、加熱時に黒鉛より発生する汚染物質がヒータ外へ
と放出されウエハを汚染することを防止する機能をＳｉ
Ｃ保護膜が担うことにより、黒鉛からの汚染物質をヒー
タ外部へと放出することなく、ウエハの加熱を行うこと
ができる。A conventional heater made of SiC-coated graphite is
A heater body made of normal graphite is provided, and the periphery thereof is covered with a protective film made of SiC having an extremely high purity.
In this SiC-coated graphite, the graphite of the heater body plays a heating function, and a function of preventing contaminants generated from the graphite during heating from being emitted to the outside of the heater and contaminating the wafer.
With the C protective film, the wafer can be heated without releasing contaminants from the graphite to the outside of the heater.
【０００５】しかしながら、このようなＳｉＣ被覆黒鉛
をヒータとして、Ｈ2 もしくはＨ2とＨＣｌの混合ガス
を成分として含む減圧雰囲気下で使用する場合、１４０
０℃付近までは比較的良好な耐性を示すが１４００℃付
近を越えると、ＳｉＣ保護膜の消失速度が次第に増大し
始め、１４５０℃を越えると、その消失速度は著しく増
大し、ＳｉＣ保護膜の耐性が大きく低下するために、ヒ
ータが短寿命化するという問題を抱えていた。However, when such a SiC-coated graphite is used as a heater in a reduced pressure atmosphere containing H 2 or a mixed gas of H 2 and HCl as a component, 140
It exhibits a relatively good resistance up to around 0 ° C, but when it exceeds around 1400 ° C, the disappearance rate of the SiC protective film gradually starts to increase, and when it exceeds 1450 ° C, the disappearance rate remarkably increases. Since the durability is greatly reduced, there is a problem that the life of the heater is shortened.
【０００６】従来のＳｉＣ被膜黒鉛製ヒータにおける、
加熱温度の上昇に伴うＳｉＣ保護膜の膜厚減少速度の増
加状況について表１に示す。このＳｉＣ保護膜が、ヒー
タ加熱部の一部においても、完全に消失してしまえば、
基材の黒鉛がむき出しの状態となり、ウエハへの汚染が
生ずるようになるため、ヒータとしては使用不可能とな
る。すなわち、この状況が生じた時点で、ヒータは寿命
を迎えていた。In a conventional SiC coated graphite heater,
Table 1 shows how the rate of decrease in the thickness of the SiC protective film increases as the heating temperature increases. If this SiC protective film completely disappears even in a part of the heater heating part,
Since the graphite of the base material is exposed and the wafer is contaminated, it cannot be used as a heater. That is, the heater had reached the end of its life when this situation occurred.
【０００７】[0007]
【表１】 [Table 1]
【０００８】[0008]
【発明が解決しようとする課題】本発明は、Ｈ2 または
Ｈ2 とＨＣｌとの混合ガスを成分として含む減圧雰囲気
下においてもＳｉＣ被覆黒鉛製ヒータよりもさらに耐熱
性・耐食性に優れ、もってさらに向上した可使寿命を有
する、半導体ＣＶＤ処理装置のヒータを提供することを
課題とする。The present invention is more excellent in heat resistance and corrosion resistance than a heater made of SiC-coated graphite even under a reduced pressure atmosphere containing H 2 or a mixed gas of H 2 and HCl as a component. An object of the present invention is to provide a heater for a semiconductor CVD processing apparatus having an improved usable life.
【０００９】[0009]
【課題を解決するための手段および作用】上記課題を解
決するために、本発明は、黒鉛からなるヒータ本体、お
よび該ヒータ本体の全表面を覆って形成された保護膜を
備え、該保護膜は、高純度熱分解黒鉛からなる単一層
膜、または高純度熱分解黒鉛からなる第１の層と高純度
炭化ケイ素からなる第２の層との積層膜からなることを
特徴とするヒータを提供する。In order to solve the above problems, the present invention comprises a heater body made of graphite, and a protective film formed so as to cover the entire surface of the heater body. Provides a heater characterized by comprising a single-layer film made of high-purity pyrolytic graphite or a laminated film of a first layer made of high-purity pyrolytic graphite and a second layer made of high-purity silicon carbide. To do.
【００１０】既述のように、上述の半導体ＣＶＤ処理装
置において、従来ヒータ材として使用されてきたＳｉＣ
被覆黒鉛では、黒鉛上へのＳｉＣ保護膜の被覆を、１４
００℃前後の温度におけるＣＶＤ処理によって行ってい
るため、１４００℃を越える温度域で、特にＨ2 又はＨ
2 とＨＣｌとの混合ガスを成分として含む減圧雰囲気下
において、ＳｉＣの消失が生じ易くなる。したがって、
１４００℃付近以上の温度ではＳｉＣ保護膜の減少速度
は増大し、耐性は低下する。As described above, the SiC that has been conventionally used as a heater material in the above-described semiconductor CVD processing apparatus.
For coated graphite, the coating of SiC protective film on graphite
Since it is carried out by the CVD process at a temperature of around 00 ° C, especially in the temperature range over 1400 ° C, especially H 2 or H
In a reduced pressure atmosphere containing a mixed gas of 2 and HCl as a component, SiC is likely to disappear. Therefore,
At temperatures above 1400 ° C., the rate of decrease of the SiC protective film increases and the resistance decreases.
【００１１】これに対し、本発明において保護層に使用
する高純度熱分解黒鉛は、ヒータの使用温度よりはるか
に高温の約２０００℃以上の温度域でＣＶＤ処理により
生成され、かつ高温で熱処理されたものであり、ＳｉＣ
よりも耐熱性・耐腐食性に優れ、高純度で結晶性に極め
て優れ、非常に緻密なものである。このような高純度熱
分解黒鉛により通常の黒鉛からなるヒータ本体を被覆す
ることにより、ヒータ加熱時のヒータ黒鉛本体からの汚
染物放出を防止する保護層としての寿命、したがってヒ
ータの寿命を大幅に向上させることができる。したがっ
て、高純度熱分解黒鉛は、これを単独で保護層として使
用することもできるし、従来の高純度ＳｉＣとの積層構
造として使用することもできる。On the other hand, the high-purity pyrolytic graphite used for the protective layer in the present invention is produced by the CVD process in a temperature range of about 2000 ° C. or higher, which is much higher than the operating temperature of the heater, and is heat-treated at a high temperature. It is a SiC
It is superior in heat resistance and corrosion resistance, high in purity, extremely excellent in crystallinity, and extremely dense. By covering the heater body made of normal graphite with such high-purity pyrolytic graphite, the life of the heater as a protective layer for preventing the emission of contaminants from the heater graphite body during heating of the heater, and hence the life of the heater, is greatly increased. Can be improved. Therefore, the high-purity pyrolytic graphite can be used alone as a protective layer, or can be used as a laminated structure with conventional high-purity SiC.
【００１２】本発明の保護膜が上記積層構造をとる場
合、高純度熱分解黒鉛からなる第１の層と高純度ＳｉＣ
からなる第２の層のいずれがヒータ本体の表面に直接接
して形成されていてもよいが、高純度ＳｉＣからなる第
２の層をヒータ本体の表面に直接接するようにすること
が好ましい。この積層構造は、３層以上としてもよく、
上記第１の層と第２の層とを交互に積層する。好ましく
は、本発明の保護層は、最上層に高純度熱分解黒鉛層
（第１の層）を有する。When the protective film of the present invention has the above-mentioned laminated structure, the first layer of high-purity pyrolytic graphite and high-purity SiC are used.
Although any of the second layers composed of 1 to 3 may be formed in direct contact with the surface of the heater body, it is preferable that the second layer composed of high-purity SiC be in direct contact with the surface of the heater body. This laminated structure may have three or more layers,
The first layer and the second layer are alternately laminated. Preferably, the protective layer of the present invention has a high-purity pyrolytic graphite layer (first layer) as the uppermost layer.
【００１３】なお、高純度熱分解黒鉛および高純度Ｓｉ
Ｃは、ともに、高純度故に、それ自体が半導体ウエハを
汚染することがないことはいうまでもない。本発明に使
用する高純度熱分解黒鉛は、通常の黒鉛からなるヒータ
本体等の基体の周囲表面にＣＶＤ処理により形成するこ
とができる。すなわち、メタン、プロパン、ベンゼン、
アセチレン等の炭化水素ガスを原料とし、これをキャリ
アガスの水素とともに（黒鉛）基板上へと送り、１５０
０℃〜２３００℃の範囲の温度で制御しながら熱分解さ
せて基体上に堆積させる。この際、原料ガスの炭化水素
ガスとキャリアガスの水素ガスとの混合ガス中に占める
炭化水素ガスの割合は１５％以下とすることが望まし
い。この混合ガスに占める原料ガスである炭化水素ガス
の割合は、その熱分解処理温度が高温となるほど低めに
抑えることが望ましい。こうして極めて純度の高い（不
純物の総含有率１０ｐｐｍ以下）黒鉛膜が得られる。し
かる後、これを高温（例えば、２６００℃ないし３２０
０℃）で熱処理する。これにより結晶性に優れ、１００
％の気密性を有する極めて緻密な膜となる。High-purity pyrolytic graphite and high-purity Si
Needless to say, both Cs do not contaminate the semiconductor wafer by themselves due to their high purity. The high-purity pyrolytic graphite used in the present invention can be formed on the peripheral surface of a substrate such as a heater body made of normal graphite by a CVD process. Namely methane, propane, benzene,
A hydrocarbon gas such as acetylene is used as a raw material, and this is sent together with hydrogen as a carrier gas onto a (graphite) substrate for 150
It is thermally decomposed and deposited on the substrate while controlling it at a temperature in the range of 0 ° C to 2300 ° C. At this time, it is desirable that the ratio of the hydrocarbon gas in the mixed gas of the raw material hydrocarbon gas and the carrier gas hydrogen gas be 15% or less. It is desirable that the ratio of the hydrocarbon gas, which is the raw material gas, to the mixed gas is suppressed to a lower value as the pyrolysis treatment temperature becomes higher. Thus, a graphite film having an extremely high purity (total content of impurities is 10 ppm or less) is obtained. Thereafter, this is heated to a high temperature (for example, 2600 ° C to 320 ° C).
Heat treatment at 0 ° C. This gives excellent crystallinity and 100
An extremely dense film having an airtightness of 100% is obtained.
【００１４】本発明において高純度熱分解黒鉛と組み合
わせて保護膜を構成するＳｉＣは、従来と同様のＣＶＤ
処理により形成することができる。これらのＣＶＤ処理
は、同一処理装置により、原料ガスを変えることによ
り、連続的に行うことができる。In the present invention, SiC, which constitutes a protective film in combination with high-purity pyrolytic graphite, has the same CVD as the conventional CVD.
It can be formed by processing. These CVD processes can be continuously performed by changing the raw material gas by the same processing apparatus.
【００１５】[0015]
【実施例】以下、本発明の実施例を図面を参照して説明
する。全図に渡り、同一部分は、同一符号で示されてい
る。図１は、本発明のヒータを組み込んだ半導体ＣＶＤ
処理装置の半導体ウエハ直接加熱系を概略的に示すもの
である。図１に示すように、処理すべき半導体ウエハ１
３は、治具１４により支持され、その裏面側に本発明の
ヒータ１０が離間して対向・配置されている。ヒータ１
０は、通常の黒鉛からなるヒータ本体１１を備える。ヒ
ータ本体１１は、その全表面が本発明の保護膜１２で被
覆されている。Embodiments of the present invention will be described below with reference to the drawings. The same parts are denoted by the same reference numerals throughout the drawings. FIG. 1 shows a semiconductor CVD in which the heater of the present invention is incorporated.
1 schematically shows a semiconductor wafer direct heating system of a processing apparatus. As shown in FIG. 1, a semiconductor wafer 1 to be processed
3 is supported by a jig 14, and the heater 10 of the present invention is spaced from and opposed to the back surface of the jig 10. Heater 1
No. 0 has a heater body 11 made of normal graphite. The entire surface of the heater body 11 is covered with the protective film 12 of the present invention.
【００１６】図２は、本発明の第１の態様によるヒータ
の断面図である。ヒータ本体１１は、単一層の保護膜１
２で被覆され、この保護膜１２は、高純度熱分解黒鉛の
単一層２１からなる。FIG. 2 is a cross-sectional view of the heater according to the first aspect of the present invention. The heater body 11 is a single-layer protective film 1
2, the protective film 12 is composed of a single layer 21 of high-purity pyrolytic graphite.
【００１７】図３は、本発明の第２の態様によるヒータ
の断面図である。ヒータ本体１１は、２層積層構造の保
護膜１２で被覆されている。この保護膜１２は、ヒータ
本体１１の全表面を直接覆う高純度ＳｉＣからなる第２
の層２２と、第２の層２２の全表面を覆って形成された
高純度熱分解黒鉛からなる第１の層２１により構成され
ている。FIG. 3 is a sectional view of a heater according to the second aspect of the present invention. The heater body 11 is covered with a protective film 12 having a two-layer laminated structure. The protective film 12 is made of a high-purity SiC that directly covers the entire surface of the heater body 11.
Layer 22 and the first layer 21 made of high-purity pyrolytic graphite formed so as to cover the entire surface of the second layer 22.
【００１８】図４は、本発明の第３の態様によるヒータ
の断面図である。このヒータは、保護層１２を構成する
第１の層２１と第２の層２２の配置が図３と逆になって
いる。すなわち、ヒータ本体１１に直接接して第１の層
２１（高純度熱分解黒鉛層）が形成され、その上に第２
の層２２（ＳｉＣ層）が形成されている。FIG. 4 is a cross-sectional view of a heater according to the third aspect of the present invention. In this heater, the arrangement of the first layer 21 and the second layer 22 constituting the protective layer 12 is opposite to that of FIG. That is, the first layer 21 (high-purity pyrolytic graphite layer) is formed in direct contact with the heater body 11, and the second layer 21 is formed thereon.
Layer 22 (SiC layer) is formed.
【００１９】図５は、本発明の第４の態様によるヒータ
の断面図である。ヒータ本体１１は、３層構造の保護膜
１２により被覆されている。この保護層１２は、ヒータ
本体１１を直接被覆する第１の層２１（高純度熱分解黒
鉛層）、第１の層２１を被覆する第２の層２２（高純度
ＳｉＣ層）、および第２の層２２を被覆する第１の層２
１（高純度熱分解黒鉛層）により構成されている。FIG. 5 is a sectional view of a heater according to the fourth aspect of the present invention. The heater body 11 is covered with a protective film 12 having a three-layer structure. The protective layer 12 includes a first layer 21 (high-purity pyrolytic graphite layer) that directly covers the heater body 11, a second layer 22 (high-purity SiC layer) that covers the first layer 21, and a second layer 21. The first layer 2 covering the layer 22 of
1 (high-purity pyrolytic graphite layer).
【００２０】図６は、本発明の第５の態様によるヒータ
の部分断面図である。ヒータ本体１１は、多層構造の保
護膜１２により被覆されている。多層構造の保護膜１２
は、ヒータ本体１１上に第２の層２２（高純度ＳｉＣ
層）と第１の層２１（高純度熱分解黒鉛層）が交互に積
層されてなる。保護膜１２の最上層は第１の層２１（高
純度熱分解黒鉛層）により構成されている。FIG. 6 is a partial cross-sectional view of a heater according to the fifth aspect of the present invention. The heater body 11 is covered with a protective film 12 having a multilayer structure. Multi-layered protective film 12
Is the second layer 22 (high-purity SiC
Layers) and the first layers 21 (high-purity pyrolytic graphite layers) are alternately laminated. The uppermost layer of the protective film 12 is composed of a first layer 21 (high-purity pyrolytic graphite layer).
【００２１】図７は、本発明の第６の態様によるヒータ
の部分断面図である。ヒータ本体１１は、多層構造の保
護膜１２により被覆されている。多層構造の保護膜１２
は、第２の層２２（高純度ＳｉＣ層）と第１の層２１
（高純度熱分解黒鉛層）の積層順序が図６と逆になって
いる。この場合も、保護膜１２の最上層は第１の層２１
（高純度熱分解黒鉛層）により構成されている。FIG. 7 is a partial cross-sectional view of a heater according to the sixth aspect of the present invention. The heater body 11 is covered with a protective film 12 having a multilayer structure. Multi-layered protective film 12
Is the second layer 22 (high-purity SiC layer) and the first layer 21.
The stacking order of the (high-purity pyrolytic graphite layer) is opposite to that shown in FIG. Also in this case, the uppermost layer of the protective film 12 is the first layer 21.
(High-purity pyrolytic graphite layer).
【００２２】なお、本発明において保護層１２の厚さ、
特に熱分解保護層の厚さ、および／またはその積層数
は、所望のヒータ寿命に応じて決定することができる。
以下、本発明のヒータを用いた実験例を記載する。 実験例 １ 図２に示す構造の本発明のヒータと従来のＳｉＣ被覆黒
鉛製ヒータとを作成し、耐性について比較評価を行っ
た。各ヒータを組み入れた加熱系の基本構造は、図１に
示す通りである。In the present invention, the thickness of the protective layer 12
In particular, the thickness of the thermal decomposition protection layer and / or the number of laminated layers thereof can be determined according to the desired heater life.
Hereinafter, experimental examples using the heater of the present invention will be described. Experimental Example 1 A heater of the present invention having a structure shown in FIG. 2 and a conventional heater made of SiC-coated graphite were prepared, and comparative evaluation was performed regarding resistance. The basic structure of the heating system incorporating each heater is as shown in FIG.
【００２３】本発明のヒータの高純度熱分解黒鉛保護膜
は、プロパンガス５％とＨ2 ガス９５％の混合ガスを２
０００℃の黒鉛基板上に３時間流すことによって形成し
た。厚さは、２０μｍであった。この保護膜の電子顕微
鏡写真を図８に示す。The high-purity pyrolytic graphite protective film of the heater of the present invention contains 2 % of a mixed gas of propane gas 5% and H 2 gas 95%.
It was formed by flowing on a graphite substrate at 000 ° C. for 3 hours. The thickness was 20 μm. An electron micrograph of this protective film is shown in FIG.
【００２４】また、従来のヒータのＳｉＣ膜は、ＳｉＣ
ｌ4 の混合ガスを１４００℃の黒鉛基板上に４８時間流
すことによって形成した。厚さは、６０μｍであった。
評価に当たっては、それぞれのヒータについて、下記の
同一条件において加熱を行ったときの減少量を測定し
た。The SiC film of the conventional heater is SiC
It was formed by flowing 48 hours a mixed gas of l 4 1400 ° C. graphite substrate. The thickness was 60 μm.
In the evaluation, for each heater, the reduction amount when heating was performed under the same conditions described below was measured.
【００２５】加熱条件は下記の通りであり、加熱は通電
加熱により行った。 加熱温度 ： １５００℃ 加熱時間 ： １０時間 雰囲気 ： ９７．５％Ｈ2 と２．５％ＨＣｌとの混
合ガス雰囲気で１００Ｔｏｒｒの減圧下。The heating conditions are as follows, and the heating was performed by electric heating. Heating temperature: 1500 ° C. Heating time: 10 hours Atmosphere: Under reduced pressure of 100 Torr in a mixed gas atmosphere of 97.5% H 2 and 2.5% HCl.
【００２６】加熱後の各ヒータの保護膜の電子顕微鏡写
真を図９および図１０に示す。図９は、本発明のヒータ
のものであり、図１０は、従来のヒータのものである。
図９からわかるように、本発明のヒータにおいて、熱分
解黒鉛層２２に損傷（膜厚の減少）は全く認められず
（図８との比較）、本発明のヒータは非常に優れた耐性
を示す。これに対して図１０からわかるように、従来の
ヒータのＳｉＣ保護膜では、ＳｉＣ被覆膜において大幅
な膜厚の減少（具体的には、約４０μｍ）が認められる
とともに、多数の異常突起３０による変質が認められ
た。Electron micrographs of the protective film of each heater after heating are shown in FIGS. 9 and 10. FIG. 9 shows a heater of the present invention, and FIG. 10 shows a conventional heater.
As can be seen from FIG. 9, in the heater of the present invention, no damage (decrease in film thickness) was observed in the pyrolytic graphite layer 22 (compared with FIG. 8), and the heater of the present invention has a very excellent resistance. Show. On the other hand, as can be seen from FIG. 10, in the SiC protective film of the conventional heater, a large reduction in film thickness of the SiC coating film (specifically, about 40 μm) is recognized, and a large number of abnormal protrusions 30 are formed. Deterioration due to
【００２７】実験例 ２ 下記表２に示す保護層を有する本発明のヒータと従来の
ＳｉＣ被覆黒鉛製ヒータとを作成し、耐性について比較
評価を行った。各ヒータを組み入れた加熱系の基本構造
は、図１に示す通りである。Experimental Example 2 A heater of the present invention having a protective layer shown in Table 2 below and a conventional heater made of SiC-coated graphite were prepared and comparatively evaluated for resistance. The basic structure of the heating system incorporating each heater is as shown in FIG.
【００２８】実験例１のヒータ以外の本発明のヒータの
高純度熱分解黒鉛保護層は、実験例１と同様に形成し、
いずれも各厚さは、３０μｍであった。また、従来のヒ
ータのＳｉＣ層、および本発明ヒータの保護膜のＳｉＣ
層は、実験例１と同様に形成し、いずれも各厚さは１０
０μｍであった。The high-purity pyrolytic graphite protective layer of the heater of the present invention other than the heater of Experimental Example 1 was formed in the same manner as in Experimental Example 1,
Each thickness was 30 μm. Further, the SiC layer of the conventional heater and the SiC layer of the protective film of the heater of the present invention
The layers were formed in the same manner as in Experimental Example 1, and each had a thickness of 10
It was 0 μm.
【００２９】評価に当たっては、それぞれのヒータにつ
いて、下記の同一条件において加熱を行ったときの単位
時間あたりの寸法減少量について測定し、それぞれのヒ
ータとしての寿命を算出した。In the evaluation, each heater was measured for the amount of dimensional reduction per unit time when heated under the same conditions below, and the life of each heater was calculated.
【００３０】加熱条件は下記の通りであり、加熱は通電
加熱により行った。 加熱温度 ： １４５０℃ 加熱時間 ： １０時間 雰囲気 ： １００％Ｈ2 雰囲気で１００Ｔｏｒｒの
減圧下。The heating conditions are as follows, and the heating was performed by electric heating. Heating temperature: 1450 ° C. Heating time: 10 hours Atmosphere: 100% H 2 atmosphere under reduced pressure of 100 Torr.
【００３１】以上の手法により、加熱による膜厚減少量
を測定したところ熱分解黒鉛層の減少量は１０時間で
０．１７μｍであり、単位時間当りの減少量は０．０１
７μｍ／時であった。この減少速度によると、３０μｍ
の厚さの熱分解黒鉛層が安全に消失するまでの時間は、
３０／０．０１７＝約１７６５時間である。なお、熱分
解黒鉛層の厚さを１００μｍとすると、その寿命は、１
００／０．０１７＝約５８８２時間となる。When the amount of reduction in film thickness due to heating was measured by the above method, the reduction amount of the pyrolytic graphite layer was 0.17 μm in 10 hours, and the reduction amount per unit time was 0.01.
It was 7 μm / hour. According to this decreasing speed, 30 μm
The time it takes for the pyrolytic graphite layer of
30 / 0.017 = about 1765 hours. When the thickness of the pyrolytic graphite layer is 100 μm, its life is 1
00 / 0.017 = approximately 5882 hours.
【００３２】これに対し、従来のＳｉＣ被覆黒鉛製ヒー
タにおいては、ＳｉＣの膜厚減少量は１０時間で２．７
４μｍであり、単位時間当りの膜厚減少量は０．２７４
μｍ／時であった。この減少速度によると、１００μｍ
の厚さのＳｉＣ層が完全に消失しヒータとして寿命を迎
えるまでの時間は、１００／０．２７４＝約３６５時間
となる。On the other hand, in the conventional SiC-coated graphite heater, the SiC film thickness reduction amount is 2.7 in 10 hours.
4 μm, the amount of film thickness reduction per unit time is 0.274
It was μm / hour. According to this decreasing speed, 100 μm
The time until the SiC layer having the thickness of 1 is completely lost and the life of the heater is reached is 100 / 0.274 = about 365 hours.
【００３３】本発明のヒータにおいて、保護膜がＳｉＣ
層と熱分解黒鉛層との積層構造からなる場合、寿命は、
ＳｉＣ層の寿命時間と熱分解黒鉛層の寿命時間との合計
時間となる。In the heater of the present invention, the protective film is SiC.
When it has a laminated structure of a layer and a pyrolytic graphite layer, the life is
It is the total of the lifetime of the SiC layer and the lifetime of the pyrolytic graphite layer.
【００３４】なお、上記条件で半導体ウエハを加熱した
後の半導体ウエハについて不純物分析も行った。結果を
表２に併せて示す。この結果からもわかるように、本発
明のヒータは半導体ウエハを汚染することなく半導体ウ
エハを加熱処理できる。Impurity analysis was also performed on the semiconductor wafer after heating the semiconductor wafer under the above conditions. The results are also shown in Table 2. As can be seen from this result, the heater of the present invention can heat-treat the semiconductor wafer without contaminating the semiconductor wafer.
【００３５】[0035]
【表２】 [Table 2]
【００３６】[0036]
【発明の効果】以上述べたように、本発明によれば、可
使寿命が著しく向上した、半導体ＣＶＤ処理装置の加熱
用ヒータが提供される。As described above, according to the present invention, there is provided a heater for heating a semiconductor CVD processing apparatus, which has a significantly improved service life.
【図１】本発明のヒータを組み込んだ、半導体ＣＶＤ処
理装置の加熱系の概略図。FIG. 1 is a schematic diagram of a heating system of a semiconductor CVD processing apparatus incorporating a heater of the present invention.
【図２】本発明の第１の態様によるヒータの断面図。FIG. 2 is a cross-sectional view of a heater according to the first aspect of the present invention.
【図３】本発明の第２の態様によるヒータの断面図。FIG. 3 is a sectional view of a heater according to a second aspect of the present invention.
【図４】本発明の第３の態様によるヒータの断面図。FIG. 4 is a sectional view of a heater according to a third aspect of the present invention.
【図５】本発明の第４の態様によるヒータの断面図。FIG. 5 is a sectional view of a heater according to a fourth aspect of the present invention.
【図６】本発明の第５の態様によるヒータの部分断面
図。FIG. 6 is a partial cross-sectional view of a heater according to a fifth aspect of the present invention.
【図７】本発明の第６の態様によるヒータの部分断面
図。FIG. 7 is a partial cross-sectional view of a heater according to a sixth aspect of the present invention.
【図８】本発明の第１の態様によるヒータの保護膜周辺
の結晶構造を示す電子顕微鏡写真図。FIG. 8 is an electron micrograph showing a crystal structure around a protective film of a heater according to the first aspect of the present invention.
【図９】本発明の第１の態様によるヒータの加熱後の保
護膜周辺の結晶構造を示す電子顕微鏡写真図。FIG. 9 is an electron micrograph showing a crystal structure around a protective film after heating of a heater according to the first embodiment of the present invention.
【図１０】従来のヒータの加熱後の保護膜周辺の結晶構
造を示す電子顕微鏡写真図。FIG. 10 is an electron micrograph showing a crystal structure around a protective film after heating by a conventional heater.
１０…ヒータ、１１…ヒータ本体、１２…保護膜、１３
…半導体ウエハ、１４…治具、２１…高純度熱分解黒鉛
層、２２…高純度ＳｉＣ層。10 ... Heater, 11 ... Heater main body, 12 ... Protective film, 13
... semiconductor wafer, 14 ... jig, 21 ... high-purity pyrolytic graphite layer, 22 ... high-purity SiC layer.
Claims (7)
接加熱用ヒータであって、黒鉛からなるヒータ本体、お
よび該ヒータ本体の全表面を覆って形成された保護膜を
備え、該保護膜は、高純度熱分解黒鉛からなる単一層
膜、または高純度熱分解黒鉛からなる第１の層と高純度
炭化ケイ素からなる第２の層との積層膜からなることを
特徴とするヒータ。1. A heater for directly heating a semiconductor wafer of a semiconductor CVD processing apparatus, comprising: a heater main body made of graphite; and a protective film formed so as to cover the entire surface of the heater main body. A heater comprising a single-layer film made of high-purity pyrolytic graphite or a laminated film of a first layer made of high-purity pyrolytic graphite and a second layer made of high-purity silicon carbide.
のヒータ。2. The heater according to claim 1, wherein the protective film is a single layer film.
のヒータ。3. The heater according to claim 1, wherein the protective film is a laminated film.
触して形成されている請求項３記載のヒータ。4. The heater according to claim 3, wherein the first layer is formed in direct contact with the surface of the heater body.
第２の層とが交互に積層されている請求項４記載のヒー
タ。5. The heater according to claim 4, wherein the protective layer comprises three or more layers, and the first layer and the second layer are alternately laminated.
触して形成されている請求項３記載のヒータ。6. The heater according to claim 3, wherein the second layer is formed in direct contact with the surface of the heater body.
第２の層とが交互に積層されている請求項６記載のヒー
タ。7. The heater according to claim 6, wherein the protective layer comprises three or more layers, and the first layer and the second layer are alternately laminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14905394A JP3361385B2 (en) | 1994-06-30 | 1994-06-30 | heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14905394A JP3361385B2 (en) | 1994-06-30 | 1994-06-30 | heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0817745A true JPH0817745A (en) | 1996-01-19 |
| JP3361385B2 JP3361385B2 (en) | 2003-01-07 |
Family
ID=15466635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14905394A Expired - Lifetime JP3361385B2 (en) | 1994-06-30 | 1994-06-30 | heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3361385B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2006028625A (en) * | 2004-07-21 | 2006-02-02 | Denso Corp | Cvd apparatus |
| EP1760170A2 (en) | 2005-09-05 | 2007-03-07 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
| JP2007335831A (en) * | 2006-06-11 | 2007-12-27 | Momentive Performance Materials Inc | Durable graphite connector and its manufacturing method |
| JP2012184152A (en) * | 2011-03-08 | 2012-09-27 | Ibiden Co Ltd | Ceramic base material support and method of manufacturing ceramic member |
| JP2020100528A (en) * | 2018-12-21 | 2020-07-02 | 住友金属鉱山株式会社 | Laminate, method for manufacturing laminate and method for manufacturing silicon carbide polycrystal substrate |
| WO2021113051A1 (en) * | 2019-12-05 | 2021-06-10 | Applied Materials, Inc. | Solid state heater and method of manufacture |
-
1994
- 1994-06-30 JP JP14905394A patent/JP3361385B2/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6881608B2 (en) | 1999-12-22 | 2005-04-19 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US7802539B2 (en) | 2000-06-30 | 2010-09-28 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2006028625A (en) * | 2004-07-21 | 2006-02-02 | Denso Corp | Cvd apparatus |
| EP1760170A2 (en) | 2005-09-05 | 2007-03-07 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
| US8277893B2 (en) | 2005-09-05 | 2012-10-02 | Japan Pionics Co., Ltd. | Chemical vapor deposition apparatus |
| JP2007335831A (en) * | 2006-06-11 | 2007-12-27 | Momentive Performance Materials Inc | Durable graphite connector and its manufacturing method |
| JP2012184152A (en) * | 2011-03-08 | 2012-09-27 | Ibiden Co Ltd | Ceramic base material support and method of manufacturing ceramic member |
| JP2020100528A (en) * | 2018-12-21 | 2020-07-02 | 住友金属鉱山株式会社 | Laminate, method for manufacturing laminate and method for manufacturing silicon carbide polycrystal substrate |
| WO2021113051A1 (en) * | 2019-12-05 | 2021-06-10 | Applied Materials, Inc. | Solid state heater and method of manufacture |
| US11665786B2 (en) | 2019-12-05 | 2023-05-30 | Applied Materials, Inc. | Solid state heater and method of manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3361385B2 (en) | 2003-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4641569B2 (en) | Aluminum nitride sintered body, corrosion resistant member, metal burying and semiconductor holding device | |
| KR100809500B1 (en) | Articles coated with aluminum nitride by chemical vapor deposition | |
| US4987016A (en) | Component for producing semiconductor devices and process of producing it | |
| JPH0530299B2 (en) | ||
| JP3361385B2 (en) | heater | |
| KR20000076134A (en) | Method of reducing metal contamination during semiconductor processing in a reactor having metal components | |
| JPH069295A (en) | Chuck made of graphite with hydrogen- impermeable outer coating layer | |
| JP3963788B2 (en) | Heating device with electrostatic adsorption function | |
| KR20120138636A (en) | Ceramic heater | |
| US6515297B2 (en) | CVD-SiC self-supporting membrane structure and method for manufacturing the same | |
| EP1416520B1 (en) | Heating apparatus with electrostatic attraction function and method for producing it | |
| EP0529593B1 (en) | A glass carbon coated graphite chuck for use in producing polycrystalline silicon | |
| US5229193A (en) | Silicon carbide member | |
| EP0781739A1 (en) | Jig for heat treatment and process for fabricating the jig | |
| US5350720A (en) | Triple-layered ceramic heater | |
| JP3481717B2 (en) | Wafer heating device with electrostatic suction function | |
| US6207305B1 (en) | Corrosion-resistant members against a chlorine-based gas | |
| JP2011100844A (en) | Device having electrostatic chucking function and method of manufacturing the same | |
| JPH04124076A (en) | Ceramic heater having plural layers | |
| JPH0817746A (en) | Heater | |
| JPH01290521A (en) | Jig for heat treatment | |
| JP3739507B2 (en) | Manufacturing method of heat treatment jig | |
| JPH06140133A (en) | Layered ceramic heater | |
| JP3869160B2 (en) | Multilayer ceramic heater and manufacturing method thereof | |
| JP3553744B2 (en) | Manufacturing method of laminated member |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081018 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081018 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091018 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20091018 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101018 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111018 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20111018 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121018 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131018 Year of fee payment: 11 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| EXPY | Cancellation because of completion of term |