JP2011100844A - Device having electrostatic chucking function and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device having an electrostatic chucking function, capable of suppressing the outbreak of flaws and particles on a chucking object when the chucking object is held by electrostatic chucking, and to provide a method of manufacturing the same. <P>SOLUTION: The device having the electrostatic chucking function includes a support substrate 11, an electrostatic chucking electrode 12 formed on the support substrate 11, an insulating layer 14 coating the electrostatic chucking electrode 12, and an aluminum nitride-made protrusion 15 formed on the insulating layer 14 on the electrostatic chucking electrode 12 side of the support substrate 11. The device has the electrostatic chucking function in which a relative density of aluminum nitride of the aluminum nitride protrusion 15 is 40-97%. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an apparatus having an electrostatic attraction function which is preferably used in a semiconductor device manufacturing process including a temperature raising process, an inspection process, and the like, and a manufacturing method thereof.

  Conventionally, a heater wound with a metal wire has been used for heating a semiconductor wafer in a manufacturing process of a semiconductor device. However, when this heater is used, there is a problem of metal contamination on the semiconductor wafer, and in recent years, the use of a ceramic integrated wafer heating apparatus using a ceramic thin film as a heating element has become common (for example, Patent Document 1).

  Above all, when heating wafers in molecular beam epitaxy, CVD, sputtering, etc., there is no outgas from the inside of the substrate, and it is a composite ceramic of pyrolytic boron nitride (PBN) and pyrolytic graphite (PG) that has high purity and excellent thermal shock resistance. It is considered effective to use a heater (see Patent Document 2). Such a heater is easier to install than conventional tantalum wire heaters, and does not cause troubles such as thermal deformation, disconnection, and short circuit. Therefore, it is easy to use, and since it is a surface heater, there is an advantage that it is relatively easy to obtain soaking.

When heating the semiconductor wafer, an electrostatic adsorption device is generally used in a reduced-pressure atmosphere in order to fix the semiconductor wafer on the heater. To ceramics (see Patent Documents 3 and 4).
Recently, an apparatus having an electrostatic adsorption function in which these ceramic integrated wafer heating apparatus and an electrostatic adsorption apparatus are integrated has been proposed. For example, an insulating layer of an electrostatic adsorption apparatus in a low temperature region such as an etching process. In the high temperature region such as the CVD process, those using pyrolytic boron nitride as the insulating layer of the electrostatic adsorption device are used (see Patent Documents 5 and 6). 7, 8).

  Further, in order to enhance the electrostatic force response at the time of wafer adsorption, a method has been proposed in which a minute protrusion is provided on the surface of the insulating layer to increase the space between the insulating layer and the wafer (Patent Document 9). ). Further, a proposal has been proposed in which such a minute protrusion is provided with a highly insulating dielectric material to reduce the dependency of the adsorption force on the composition of the wafer back surface (Patent Document 10). These have the advantage that the amount of dust generation can be suppressed because the contact area with the wafer is small.

JP-A-4-124076 Japanese Unexamined Patent Publication No. 63-241922 JP 52-67353 A JP 59-124140 A Japanese Patent Laid-Open No. 4-358074 JP-A-5-109876 JP-A-5-129210 Japanese Patent Application No. 5-152015 JP-A 63-95644 JP-T-2001-517872

New Ceramics (7), p49-53, 1994

  For example, a device having an electrostatic adsorption function in which a minute protrusion is provided on the surface of an insulating layer made of ceramic and the wafer is supported by this protrusion has been used in recent years. New problems such as dust growth and the like have occurred due to thermal expansion and scratching and scratching of the wafer back surface at the protrusions, damage to the protective film on the wafer back surface side, and the like.

  The present invention has been made in view of the above problems, and has an electrostatic adsorption function capable of suppressing the generation of scratches and particles on an object to be adsorbed when the object to be adsorbed is held by electrostatic adsorption. And it aims at providing the manufacturing method.

  In order to achieve the above object, the present invention provides at least a support substrate, an electrostatic adsorption electrode formed on the support substrate, an insulating layer covering the electrostatic adsorption electrode, and a static of the support substrate. An apparatus having an electrostatic adsorption function including an aluminum nitride protrusion formed on the insulating layer on the electroadsorption electrode side, wherein the aluminum nitride relative density of the aluminum nitride protrusion is 40 An apparatus having an electrostatic attraction function is provided.

  Thus, by having the projection made of aluminum nitride on the insulating layer, the responsiveness of the electrostatic force is increased and the amount of dust generation is also suppressed. If the relative density of aluminum nitride in the aluminum nitride projections is 40% to 97%, the strength of the projections is maintained and dust generation is prevented, while scratches and particles on the adsorbate due to rubbing etc. It becomes an apparatus that can reduce the occurrence. In addition, by adjusting the relative density of only the protrusions, other insulating layers and the like have high density, and the entire device can be made firmly, so that it can be used stably up to a high temperature range and can be a long-life device. .

At this time, it is preferable that the aluminum nitride protrusions contain carbon in the range of 10 ppm to 3 mass%.
Thus, if the aluminum nitride protrusion contains carbon in the range of 10 ppm to 3% by mass, the electrostatic adsorption force becomes stronger, and the object to be adsorbed can be sufficiently adsorbed and held. It becomes a device.

At this time, it is preferable that the aluminum nitride protrusion is formed by any one of a thermal CVD method, a metal organic chemical vapor deposition method, an ion plating method, and a physical vapor deposition method.
If such aluminum nitride protrusions are formed by any of thermal CVD, metal organic chemical vapor deposition, ion plating, and physical vapor deposition, high-purity aluminum nitride Thus, the device is less contaminated with the adsorbed material.

At this time, it is preferable that the insulating layer is any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride.
If the insulating layer is any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride, the aluminum nitride protrusions can be bonded well. This is a device that can be used more stably even at high temperatures.

At this time, it is preferable that the insulating layer contains a resistance adjusting element in a range of 0.001% to 20%.
If such an insulating layer contains an element for resistance adjustment in the range of 0.001% to 20%, the adsorptive power becomes stronger, so that the object to be adsorbed can be stably adsorbed and held. Device.

At this time, it is preferable that the exposed part of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched to be concave.
In this way, if the exposed portion of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched and made concave, the upper surface of the aluminum nitride projection and the insulation on which the projection is not formed Since the level difference from the surface of the layer can be increased and the object to be adsorbed can be prevented from coming into contact with the surface of the insulating layer even if the object is deformed by heat or the like, the device can be further suppressed from causing damage to the object to be adsorbed.

  Further, the present invention is a method for manufacturing an apparatus having an electrostatic adsorption function, at least a step of preparing a support substrate, a step of forming an electrode for electrostatic adsorption on the prepared support substrate, A step of forming an insulating layer so as to cover the electrode for electrostatic attraction, and a protrusion made of aluminum nitride on the insulating layer on the side of the electrode for electrostatic attraction of the support substrate. There is provided a method for manufacturing a device having an electrostatic attraction function including a step of controlling and forming so as to be in a range of 97%.

  In this way, by forming the aluminum nitride protrusion on the insulating layer, the responsiveness of the electrostatic force when adsorbing an object to be adsorbed is increased, and a device with a small amount of dust generation can be manufactured. Also, if the relative density of aluminum nitride in the aluminum nitride protrusions is controlled to be in the range of 40% to 97%, the adsorbate due to rubbing or the like while maintaining the strength of the protrusions to prevent dust generation It is possible to manufacture a device that can reduce scratches and particle generation. Also, by adjusting the relative density of only the protrusions, other insulating layers have a high density, and the entire device can be made firmly, so that it can be used stably up to high temperatures and has a long life. it can.

At this time, in the step of forming the aluminum nitride projections, the surface of the insulating layer on the side of the electrostatic adsorption electrode of the support substrate other than the portion for forming the aluminum nitride projections is previously masked. It is preferable to cover and then form the aluminum nitride protrusion.
Thus, by covering the surface of the insulating layer on the electrostatic adsorption electrode side of the support substrate other than the portion for forming the aluminum nitride projections with a mask in advance, the aluminum nitride projections are formed, Protrusions having a desired shape can be easily formed with good positional accuracy with good bonding.

At this time, in the step of forming the aluminum nitride protrusion, the aluminum nitride protrusion is preferably formed so as to contain carbon in the range of 10 ppm to 3 mass%.
Thus, by forming the protrusion made of aluminum nitride so as to contain carbon in the range of 10 ppm to 3% by mass, an apparatus having a stronger electrostatic adsorption force and capable of stably holding the object to be adsorbed. Can be manufactured.

At this time, in the step of forming the aluminum nitride protrusion, the aluminum nitride protrusion is formed by any one of a thermal CVD method, a metal organic chemical vapor deposition method, an ion plating method, and a physical vapor deposition method. It is preferable to form.
In this way, high-purity aluminum nitride can be formed by forming the protrusions made of aluminum nitride by any one of thermal CVD, metal organic chemical vapor deposition, ion plating, and physical vapor deposition. Thus, an apparatus with little contamination to the object to be adsorbed can be manufactured.

At this time, in the step of forming the insulating layer, it is preferable to form any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride as the insulating layer.
Thus, by forming any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride as the insulating layer, it is possible to satisfactorily bond the aluminum nitride protrusions. Therefore, an apparatus that can be used stably even at high temperatures can be manufactured.

At this time, in the step of forming the insulating layer, it is preferable that the insulating layer is formed so as to contain an element for resistance adjustment in a range of 0.001% to 20%.
Thus, by forming the insulating layer so that the resistance adjusting element is contained in the range of 0.001% to 20%, the electrostatic adsorption force can be increased, and the object to be adsorbed can be stably held. Possible devices can be manufactured.

At this time, after the step of forming the aluminum nitride protrusion, the exposed portion of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched into a concave shape by RIE (reactive ion etching). It is preferable.
As described above, the exposed portion of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched by RIE (reactive ion etching) to form a concave shape, whereby a step between the upper surface of the protruding portion and the exposed portion of the insulating layer is formed. Therefore, it is possible to reliably manufacture a device that does not come into contact with the insulating layer even when the adsorbed material is thermally expanded at a high temperature.

  As described above, according to the present invention, the object to be adsorbed can be stably adsorbed and held up to a high temperature range with high electrostatic force responsiveness while preventing damage to the object to be adsorbed and generation of particles. A long-life device that can be used.

It is the schematic which shows an example of the embodiment of the apparatus which has an electrostatic attraction function of this invention. It is a flowchart which shows an example of the embodiment of the manufacturing method of the apparatus which has an electrostatic attraction function of this invention. It is the SEM image which shows the insulating layer and the projection part made from aluminum nitride which were selectively etched, and the elements on larger scale. In manufacture of the apparatus which has an electrostatic attraction function of this invention, it is explanatory drawing before and behind etching the exposed part of an insulating layer.

Hereinafter, the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.
FIG. 1 is a schematic view showing an example of an embodiment of an apparatus having an electrostatic attraction function according to the present invention. FIG. 2 is a flowchart showing an example of an embodiment of a method for manufacturing an apparatus having an electrostatic attraction function according to the present invention.

  An apparatus 10 having an electrostatic attraction function according to the present invention shown in FIG. 1A includes a support substrate 11, an electrostatic attraction electrode 12 formed on the support substrate 11, and an insulation that covers the electrostatic attraction electrode 12. An apparatus 10 having an electrostatic adsorption function, including a layer 14 and an aluminum nitride protrusion 15 formed on the insulating layer 14 on the electrostatic adsorption electrode 12 side of the support substrate 11. The relative density of the aluminum nitride of the protrusion 15 is 40% to 97%.

As described above, the device of the present invention has a protrusion between the adsorbent and the insulating layer by having the aluminum nitride protrusion on the insulating layer, so that the responsiveness of the electrostatic force is improved. Reduces the amount of dust generated. And if the relative density of aluminum nitride in the aluminum nitride projections is 40% to 97%, it will prevent the generation of scratches and particles while maintaining the strength of the projections and preventing dust generation. The device can be reduced. When the relative density of aluminum nitride is less than 40%, the structure of the protrusion itself becomes brittle, and dust is generated from the protrusion itself to increase the number of particles generated on the object to be adsorbed. In addition, when the relative density of aluminum nitride exceeds 97%, the structure of the protruding portion becomes strong, and the object to be adsorbed is easily damaged. In addition, by adjusting the relative density of only the protrusions, other insulating layers and the like have a high density, and the entire device can be made firmly, so that it can be used stably up to high temperatures and has a long life. .
In the present invention, if the relative density of the aluminum nitride of the aluminum nitride protrusions 15 is preferably 60% to 92%, the apparatus can further reduce damage to the object to be adsorbed and dust generation from the apparatus. It becomes.

Here, the relative density of aluminum nitride is obtained by measuring the bulk density of protrusions made of aluminum nitride and dividing it by the theoretical density of aluminum nitride 3.255 (g / cm ³ ).

  Further, as shown in FIG. 1A, the apparatus 10 of the present invention forms a heater pattern 13 on the surface of the support substrate 11 opposite to the electrostatic adsorption electrode 12 to heat the object to be adsorbed. It can also be set as the apparatus which can.

Moreover, as the apparatus 10 of this invention, as shown in FIG.1 (b), the exposed part of the insulating layer 14 by the side of the electrostatic attraction electrode 12 of the support substrate 11 shall be etched and made concave. preferable.
In this way, if the exposed portion of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched and made concave, the upper surface of the aluminum nitride projection and the insulation on which the projection is not formed The level difference from the surface of the layer can be easily increased, and even if the object to be adsorbed is deformed by heat or the like, it can be prevented from coming into contact with the surface of the insulating layer. .

FIG. 2 shows an example of a method for manufacturing a device having an electrostatic attraction function according to the present invention that can manufacture the device 10 having an electrostatic attraction function according to the present invention.
In the manufacturing method of the present invention, as shown in FIG. 2A, first, a support substrate 11 is prepared.
The support substrate 11 to be prepared is not particularly limited as long as it has heat resistance and insulating properties. For example, a support substrate 11 made of a mixed sintered body of boron nitride and aluminum nitride, or a base material made of graphite is heated. A material coated with decomposed boron nitride can be used.

Next, as shown in FIG. 2B, the electrostatic chucking electrode 12 is formed. The shape of the electrostatic attraction electrode 12 is not particularly limited, and for example, a bipolar type having a pair of internal electrodes can be formed.
Further, when forming the electrostatic adsorption electrode 12, for example, by thermally decomposing methane gas on the support substrate 11 under predetermined conditions, depositing pyrolytic graphite layers on both sides, and then patterning each, The heater pattern 13 for heating can be formed on the opposite surface together with the electrostatic adsorption electrode 12. Thus, when a heating function is added to the apparatus of the present invention, the heater pattern 13 for heating can be formed on the back surface.

Next, as shown in FIG. 2C, an insulating layer 14 is formed so as to cover the electrostatic adsorption electrode 12.
At this time, the insulating layer 14 is not particularly limited, but it is preferable to form any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride.
In this way, any of the above can make it possible to satisfactorily bond the aluminum nitride protrusions in the subsequent process and hardly peel them off, so that a device that can be used stably even at high temperatures can be manufactured.

At this time, the insulating layer 14 is preferably formed so as to contain an element for resistance adjustment in a range of 0.001% to 20%.
As described above, by forming the insulating layer so that the resistance adjusting element is contained in the above range, an electrostatic adsorption force can be further strengthened, and a device capable of stably holding an object to be adsorbed is manufactured. Can do.

  The insulating layer 14 can be formed by joining a thermal CVD method or a sintered body with a high-temperature adhesive. For example, when forming a carbon-containing pyrolytic boron nitride insulating layer, ammonia is formed on the support substrate. And boron trichloride, a mixed gas of methane and boron trichloride, is allowed to flow at a flow rate of methane in the range of 10% to 50% in the ratio of ammonia, the reaction temperature is in the range of 1700 ° C to 1850 ° C, and the reaction pressure is, for example, 5 Torr By reacting under the condition of (666 Pa), for example, a carbon-containing pyrolytic boron nitride insulating layer having a thickness of 200 μm containing carbon can be formed.

  Next, as shown in FIG. 2D, the aluminum nitride protrusions 15 are formed on the insulating layer 14 on the electrostatic adsorption electrode 12 side of the support substrate 11 so that the relative density of aluminum nitride is 40% to 97%. Preferably, it is formed so as to be in the range of 60 to 92%.

At this time, the aluminum nitride protrusions 15 are preferably formed by any one of a thermal CVD method, a metal organic chemical vapor deposition method, an ion plating method, and a physical vapor deposition method.
In this way, high-purity aluminum nitride can be formed by forming the protrusions made of aluminum nitride by any one of thermal CVD, metal organic chemical vapor deposition, ion plating, and physical vapor deposition. Thus, an apparatus with little contamination to the object to be adsorbed can be manufactured. For this reason, a device defect can be reduced by using the apparatus manufactured by this invention in manufacture of a semiconductor device.

The method for controlling the formed aluminum nitride so as to have a relative density in the above range using the above method is not particularly limited. For example, alkyl aluminum (TMA, TEA, TiBA, DEAC, DEAH) and When the mixed gas of NH ₃ is reacted at a high temperature, the flow rate of the source gas, the reaction temperature, and the like can be selected and formed so as to have a relative density in the above range. Alternatively, for example, by using an ion plating method or a physical vapor deposition method (sputtering method) using AlN as a target, the substrate temperature condition, pressure, and power condition can be selected so as to have a relative density in the above range. it can.

  At this time, the surface of the insulating layer 14 of the support substrate 11 on the side of the electrostatic attraction electrode 12 other than the portion for forming the aluminum nitride projection 15 is covered with a mask in advance, and then the aluminum nitride projection 15 is formed It is preferable to do. For example, when forming a circular projection, a hole with a desired diameter is punched in the mask material at a position where the projection is to be formed, the insulating layer surface is covered with the mask, and then aluminum nitride is formed. Thus, it is possible to easily form a protrusion with good positional accuracy and good adhesion.

  However, in the present invention, the method for forming the aluminum nitride protrusions 15 is not limited to the above, and an aluminum nitride layer is formed on the entire surface of the insulating layer, and then an unnecessary portion for forming the protrusions is formed. Can be removed by mechanical grinding or by sandblasting with a mask.

Moreover, in this invention, it is preferable to form the protrusion part 15 made from aluminum nitride so that carbon may be contained in the range of 10 ppm to 3% by mass, more preferably in the range of 100 ppm to 2%.
As described above, the aluminum nitride protrusion includes carbon in the range of 10 ppm to 3% by mass, particularly 100 ppm to 2% by mass, so that the electrostatic adsorption force becomes stronger and the object to be adsorbed is sufficiently clamped. Can be manufactured.

Next, as shown in FIG. 2E, the exposed portion of the insulating layer 14 on the electrostatic adsorption electrode 12 side of the support substrate 11 is preferably etched into a concave shape by RIE (reactive ion etching). . FIG. 4 shows a state before and after etching the exposed portion of the insulating layer 14. As shown in FIG. 4B, the protrusions 15 and the insulating layer 14 in the state shown in FIG. Plasma etching is performed to etch only the exposed portion of the insulating layer 14 to form a concave shape. Aluminum nitride has good corrosion resistance under plasma, is hardly etched, and the height of the protrusion can be maintained. Further, when the exposed portion of the insulating layer 14 is dug by RIE as in this step, it is preferable to form the insulating layer 14 other than aluminum nitride which is difficult to be etched.
Thereby, the level difference between the upper surface of the protrusion and the exposed portion of the insulating layer can be easily adjusted, and even when the object to be adsorbed thermally expands at a high temperature, it becomes difficult to contact the insulating layer.

  As described above, the apparatus of the present invention manufactured by the manufacturing method of the present invention has very little damage to an object to be adsorbed such as a wafer, dust generation from the apparatus itself, and can be used stably up to a high temperature range. It becomes an apparatus having a lifetime electrostatic adsorption function.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.
(Examples and comparative examples)
Pyrolytic boron nitride is deposited on the entire surface of a carbon substrate having a diameter of 200 mm and a thickness of 10 mm by reacting ammonia and boron trichloride at a mixing ratio of 8: 1 in a CVD furnace at a temperature of 2000 ° C. and a pressure of 5 Torr (666 Pa). A support substrate coated with a thickness of 0.5 mm was prepared.

Next, methane gas is pyrolyzed on a support substrate under the conditions of 1800 ° C. and 5 Torr (666 Pa), and a pyrolytic graphite layer having a thickness of 100 μm is deposited on both surfaces, thereby forming an electrostatic adsorption electrode and a heater pattern for heating. Formed on opposite sides of each.
Next, a mixed gas of ammonia and boron trichloride and methane and boron trichloride is flowed on the support substrate at a flow rate of methane of 30% in a ratio of ammonia to a reaction temperature of 1800 ° C. and a reaction pressure of 5 Torr (666 Pa). Reaction was performed under conditions to form a carbon-containing pyrolytic boron nitride insulating layer having a thickness of 200 μm and containing carbon.

Next, the insulating layer is covered with a punched mask, and TMA is flown in the range of ₅ to 20 sccm as alkylaluminum, and NH ₃ is in the range of 100 to 5000 sccm using metal organic chemical vapor deposition (MOCVD). Further, by selecting various conditions between reaction temperatures of 800 to 1200 ° C., 35 to 99% (Example: 40% to 97%, Comparative Example: 35%, as shown in Table 1 below) The protrusions of aluminum nitride having various relative densities were formed in the range of 98% to 100%. The aluminum nitride protrusions were 1 mm in diameter and 5 μm in thickness, and were formed at regular intervals of 4 mm.

Next, in order to adjust the level difference of the protrusion made of aluminum nitride, the surface of the insulating layer excluding the insulating layer immediately below the protrusion was etched by RIE (reactive ion etching). At this time, in order to etch the carbon-containing pyrolytic boron nitride insulating layer, a mixed gas of CF ₄ gas and oxygen gas was flowed, and etching was performed with 200 W of RF power in the plasma of the gas.
FIGS. 3A and 3B show an image obtained by observing the etched insulating layer and the protruding portion with SEM (Scanning Electron Microscopy) and a partially enlarged view thereof. As shown in FIG. 3, the aluminum nitride protrusions 15 have good corrosion resistance under plasma and remain almost unetched, and the surrounding carbon-containing pyrolytic boron nitride insulating layer 14 is easily eroded and thus is etched away. ing. By such a method, the step between the upper surface of the protruding portion and the exposed insulating layer surface could be adjusted to 30 μm.

  Further, a device having a relative density of 100% of the aluminum nitride of the protrusions was also prepared as a comparative example by integrally sintering the support substrate, the insulating layer, and the aluminum nitride protrusions with aluminum nitride. At this time, the shape, size, and the like of the protrusion were formed in the same manner as in the device manufactured above.

As an evaluation method of a device having an electrostatic adsorption function produced as described above, the produced device is heated to 500 ° C. in a vacuum chamber of vacuum N ₂ atmosphere and pressure of 10 ⁻³ Pa, and 8 inches thereon. The polished surface of the Si bare wafer was adsorbed at ± 300 V for 2 minutes. The adsorbed wafer back surface was evaluated by a wafer defect inspection review apparatus MAGICS (manufactured by Lasertec Corporation).

As an evaluation of scratches, the presence / absence of scratches was judged from 100 images extracted by the inspection apparatus, and five or less scratches were evaluated as A, and those exceeding five were rated as B.
Furthermore, dust generation evaluation is performed with the total number of particles counted by the inspection apparatus, the total number of particles is 5000 or less, evaluation A, 5001 to 20000 or less is evaluation B, 20001 to 50000 or less is evaluation C, and more than 50000 The product was evaluated as D and four grades.
Table 1 below summarizes the evaluation of scratches and dust generation on the object to be adsorbed as described above. Considering both the evaluation of scratches and the evaluation of dust generation, a three-stage evaluation of A to C was finally performed as a comprehensive evaluation.

As shown in Table 1, an apparatus in which the relative density of the aluminum nitride in the protrusions was 40% or more and 97% or less gave a good overall result. Further, the apparatus in which the relative density of the aluminum nitride at the protrusions is 60% or more and 92% or less was very good in both scratches and dust generation on the wafer. A protrusion having a relative density of aluminum nitride of 35% was brittle and generated a large amount of dust. Further, when the relative density of the aluminum nitride in the protrusions was 98 to 100%, many scratches were generated and much dust was generated.
Further, even when another type of insulating layer was formed and the same experiment was performed, the evaluation result was almost equivalent, and the result depended on the relative density of the aluminum nitride in the protruding portion regardless of the insulating layer.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

10: Device having an electrostatic adsorption function, 11: Support substrate,
12 ... Electrode for electrostatic adsorption, 13 ... Heater pattern for heating,
14 ... Insulating layer, 15 ... Projection made of aluminum nitride.

Claims (13)

At least a support substrate, an electrode for electrostatic adsorption formed on the support substrate, an insulating layer covering the electrode for electrostatic adsorption, and formed on the insulating layer on the electrode side for electrostatic adsorption of the support substrate A device having an electrostatic adsorption function including a projected portion made of aluminum nitride,
An apparatus having an electrostatic attraction function, wherein the aluminum nitride has a relative density of 40% to 97% in the aluminum nitride protrusions.   The apparatus having an electrostatic attraction function according to claim 1, wherein the aluminum nitride protrusion includes carbon in a range of 10 ppm to 3 mass%.   The protrusion made of aluminum nitride is formed by any one of a thermal CVD method, a metal organic chemical vapor deposition method, an ion plating method, and a physical vapor deposition method. Item 3. An apparatus having an electrostatic adsorption function according to Item 2.   4. The insulating layer according to claim 1, wherein the insulating layer is any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride. The apparatus which has the electrostatic adsorption function of description.   The device having an electrostatic attraction function according to claim 4, wherein the insulating layer contains an element for resistance adjustment in a range of 0.001% to 20%.   The static part according to any one of claims 1 to 5, wherein an exposed portion of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched to be concave. A device with an electroadsorption function. A method of manufacturing a device having an electrostatic adsorption function, at least,
Preparing a support substrate;
Forming an electrostatic chucking electrode on the prepared support substrate;
Forming an insulating layer so as to cover the electrode for electrostatic attraction;
Forming a projection made of aluminum nitride on the insulating layer on the electrostatic adsorption electrode side of the support substrate while controlling the relative density of aluminum nitride to be in the range of 40% to 97%. A method for manufacturing a device having an electrostatic adsorption function.   In the step of forming the aluminum nitride protrusion, the surface of the insulating layer on the electrostatic adsorption electrode side of the support substrate other than the portion where the aluminum nitride protrusion is formed is covered with a mask in advance. The method for manufacturing an apparatus having an electrostatic attraction function according to claim 7, wherein the aluminum nitride protrusion is formed.   9. The step of forming the aluminum nitride protrusion, wherein the aluminum nitride protrusion is formed so as to contain carbon in the range of 10 ppm to 3 mass%. The manufacturing method of the apparatus which has an electrostatic adsorption function of description.   In the step of forming the aluminum nitride protrusion, the aluminum nitride protrusion is formed by any one of a thermal CVD method, a metal organic chemical vapor deposition method, an ion plating method, and a physical vapor deposition method. A method for manufacturing an apparatus having an electrostatic attraction function according to any one of claims 7 to 9.   8. The step of forming the insulating layer includes forming, as the insulating layer, any one of silicon nitride, a mixture of boron nitride and aluminum nitride, alumina, aluminum nitride, and pyrolytic boron nitride. The manufacturing method of the apparatus which has an electrostatic attraction function as described in any one of Claims 10 thru | or 10.   The electrostatic adsorption according to claim 11, wherein in the step of forming the insulating layer, the insulating layer is formed so as to contain an element for resistance adjustment in a range of 0.001% to 20%. A method for manufacturing a device having a function. After the step of forming the aluminum nitride protrusion, the exposed portion of the insulating layer on the electrostatic adsorption electrode side of the support substrate is etched into a concave shape by RIE (reactive ion etching). A method for manufacturing a device having an electrostatic attraction function according to any one of claims 7 to 12.

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