JPH08176831A - Film forming device by high-speed heat treatment - Google Patents

Abstract

PURPOSE: To make it possible to heat up a substrate to be treated at a high speed without using IR lamp heating by forming a susceptor to be placed with this substrate and a resistance heater for heating the substrate of materials having a high heating up rate. CONSTITUTION: The substrate 1 to be treated is placed on a cylindrical susceptor 2 within a chamber 24 and while the annular resistance heater 4 hermetically housed within the quartz case 3 in this susceptor 2 is rotated, the substrate 1 to be treated is heated and reactive gases are passed through an introducing port 9 and a discharge port 10, by which the high-speed heat treatment of the substrate 1 is executed. At this time, the susceptor 2 is formed of the material having the high heating up rate, for example, a material formed by coating carbon with SiC by CVD. The strand of the resistant heater 4 is also formed of the material having the high heating up rate, for example, carbon, etc., and is freely vertically movably disposed. As a result, the extremely high heating up rate is attained and radiation energy, etc., are decreased.

Description

Detailed Description of the Invention

[0001]

This invention relates to a semiconductor or LC
In the production of D, the present invention relates to a rapid thermal processing film forming apparatus, particularly a thermal CVD apparatus, which can raise and lower the temperature of a substrate at high speed without using lamp heating.

[0002]

2. Description of the Related Art Conventionally, a heat treatment apparatus of this type has a substrate in a quartz processing chamber supported by a rotatable support via a susceptor, and an infrared lamp arranged above and / or below the processing chamber. The substrate was heated and heat-treated through a quartz chamber or a quartz window.

Since this conventional apparatus is heated by an infrared lamp, it has excellent temperature raising / lowering characteristics, but on the other hand, it is very difficult to detect the temperature and control the temperature due to a change in the emissivity of the processing substrate. The reproducibility was also poor. In addition, since the life of the infrared lamp is about several months at the most, it is necessary to replace and maintain the lamp frequently, which causes a problem of high running cost. Furthermore, when the above-mentioned lamp heating is used and a reaction gas is caused to flow to form a film on the substrate, depending on the process, the film is formed in the quartz chamber, and as a result, the radiant energy reaching the substrate is reduced.

[0004]

SUMMARY OF THE INVENTION The present invention is intended to solve such a conventional problem, and a high-speed heat treatment apparatus capable of raising and lowering the temperature of a substrate at a high speed without using lamp heating. The purpose is to provide.

[0005]

The structure of the present invention in accordance with the above object is a rapid thermal processing film forming apparatus for forming a film by flowing a reaction gas while heating a processing substrate on a susceptor in a chamber, The susceptor is made of a material having a high temperature raising / lowering rate, and a resistance heating heater formed of a wire having a high temperature raising / lowering rate is arranged below the susceptor so as to be vertically movable. And

[0006]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a sectional view showing a state in which the heater unit of the present invention is raised, and FIG. 2 is a sectional view showing a state in which the heater unit is lowered. A cylindrical susceptor 2 having a closed upper end is housed in a chamber 24 formed so as to maintain a vacuum state, and the substrate 1 is placed on the upper end of the susceptor-2. The upper end of the susceptor-2 may be formed like a normal susceptor. The opening at the lower end of the cylindrical susceptor-2 has a magnetic fluid seal 6
It is fixed to the cylindrical rotary shaft 7. Therefore, the susceptor-2 can rotate together with the cylindrical rotation shaft 7. The rotation of the cylindrical rotary shaft 7 is performed by rotating the timing belt 28 wound around the rotary shaft 7 by the motor 12 via the pulley 13. Of course, it may be rotated by other means. The opening at the lower end of the chamber 24 is fixed to the magnetic fluid seal 6, and the chamber 2
The inside of 4 can be kept airtight.

In the cylindrical susceptor 2, a resistance heating heater 4 is hermetically housed in a quartz case 3 which is evacuated or purged with an inert gas, and only the power supply line 14 is supplied from the quartz case 3. Is designed to be pulled out from the case. The resistance heating heater 4 is formed in a ring shape, and ring-shaped heaters having different diameters are arranged concentrically. The resistance heating heater 4 may be formed in a spiral shape. The resistance heating heater 4 is divided into a plurality of zones, and the output of each zone can be controlled independently. In the above embodiment, ring-shaped heaters having different diameters arranged concentrically are used as a unit, and each unit can be controlled individually or in combination. The heater 4 is fixed to the upper surfaces of a large number of terminal blocks 36 of a power source formed in a rod shape from a heat resistant material such as stainless steel, an aluminum alloy, and heat resistant ceramics.

A gold-plated reflector plate or a molybdenum reflector plate 5 is disposed below and under the resistance heating heater 4. Radiant energy from the resistance heating heater 4 is concentrated in the substrate direction by the reflector 5. As described above, the heater unit 35 in which the heater 4 and the like are incorporated in the quartz case 3 has its lower end fixed to the cylindrical elevating cylinder 26 that moves up and down at high speed so that it can move up and down at high speed. Has become. The cylindrical elevating cylinder 26 that moves up and down at high speed is fixed to a plate 27 that moves up and down at high speed. One end of a plate 27 that moves up and down at high speed is fixed to a ball screw 20 that rotates by a motor 12 'so as to move up and down, and is moved up and down by a linear mechanism 19 such as an LM guide.

A donut-shaped heat insulating material 17 is fixed below the lower end of the movable portion of the heater unit 35 that moves up and down. The cylindrical elevating cylinder 26 is guided by an opening in the center of the heat insulating material 17 to move up and down. Lifting tube 26
Since is fitted into the heat insulating material 17 with almost no gap, it prevents convection of heat with the outside air and prevents heat from escaping to the outside. A gas introduction port 9 and an exhaust port 10 are formed in the chamber 24, and the reaction gas is introduced from the introduction port 9 and exhausted from the exhaust port 10 as indicated by an arrow. In the present invention, the susceptor 2 and the wire 3 of the resistance heating heater must be formed of a material having a high temperature rising / falling rate.

As a material of such a susceptor 2,
For example, a material obtained by CVD-coating SiC on a carbon, or a material obtained by CVD-coating SiC on SiC or SiC can be preferably used. As the material of the wire 3 of the resistance heating heater, carbon, material coated with SiC on the carbon, SiC sintered body or MoSi ₂ can be preferably used. Board 1
The temperature can be detected by inferring from a value measured by embedding a thermocouple in the susceptor 2. For the temperature control of the substrate, the temperature of the heater is controlled by using the temperature measurement value of this thermocouple and the measurement value of the thermocouple arranged in the heater 3 or in the vicinity of the heater. Can be done by

5 and 6 show an example in which a large number of small holes (recesses) 29 are formed on the back surface of the susceptor 2 and the tip of the thermocouple 25 is fixed to the small holes 29. The susceptor 2 needs to have such strength that it will not be deformed even if the chamber is evacuated, and in order to speed up and down the temperature,
Although it is necessary to make the heat capacity as small as possible, it is possible to meet this requirement by forming a large number of small holes 29 in this manner. For temperature detection, as shown in FIG. 1, a plurality of openings are formed at the upper end of the chamber, a window member 16 is attached to each of the openings, and the window member 16 is arranged above and adjacent to the window member 16. The temperature of the substrate 1 may be measured by the provided radiation thermometer 8. As shown in FIGS. 1 and 4, a pair of arms 15 and 15 'are fixed to the lower end of a rod 30 which is vertically movable and rotatable in the chamber.
The rods 30, 30 'are air cylinders 11, 11'.
(11 'is not shown) allows vertical movement and rotation.

A vacuum bellows 18, 18 '(18' is not shown) is fitted on the upper ends of the rods 30, 30 'inside the chamber. Therefore, the rods 30, 30 '
Can be moved up and down and can be rotated in a vacuum without any trouble. Substrate lifting arms 21 and 21 'are connected to the facing surfaces of the arms 15 and 15', respectively.
The frames 21 and 21 'are inserted and guided in the arm insertion grooves 22 and 22' formed on the surface of the susceptor so that the substrate 1 can be lifted from below the substrate 1. In the above embodiment, two board lifting arms 21 are connected to one of the arms 15 and 15 ', and the susceptors are provided with the insertion grooves 22 of all the board lifting arms 21 and 21'. Two
Since 2'is formed, as shown in FIG. 4, when the substrate lifting arms 21 and 21 'are inserted into the lower side of the substrate 1 and raised, the substrate 1 is made up of three substrate lifting arms. It will be in a supported state.

In this way, with the substrate 1 slightly floated from the susceptor-2, the substrate transfer arm (not shown) inserted through the substrate passage port 23 is inserted under the substrate 1 and the substrate 1 Can be carried out of the chamber 24.
FIG. 2 is a sectional view showing a state where the quartz case 3 having the heater 4 built therein is lowered to the lower end of the movable portion. Normally, in this position, the susceptor-2 is relatively cold (300-500).
When the substrate 1 is transferred onto the susceptor-2 by temperature control so that the substrate 1 is conveyed to the susceptor-2, the quartz case 3 rises and at the same time, the output of the heater is raised to make the substrate 1 move at a high speed ( 10
C./sec.). The rate of temperature increase / decrease is not as high as that of the lamp heating method, but the temperature is increased / decreased much faster than the case of raising / lowering the temperature with a normal resistance heating heater.

FIG. 3 is a sectional view showing an embodiment in which a gas injector is used as a method of introducing a reaction gas. At the top of the chamber 24, the gas injector
The pipe portion 31 of 32 is tightly fitted, and the reaction gas is jetted to the substrate 1 from a large number of through holes formed in the lower surface of the hollow disc-shaped gas dispersion head 33 that is connected to the lower end of the pipe portion 31. . The reaction gas that has passed over the substrate 1 is exhausted through the exhaust port 1 formed in the lower part of the chamber as shown by the arrow in FIG.
It is discharged from 0,10 '. In this embodiment, the gas dispersion head 33 is fixed, but the susceptor-2 is rotating, so that a substrate having excellent film formation uniformity can be obtained.

FIG. 7 is a graph showing an example of temperature and operation sequence in actual processing. First, chamber 2
The inside of 4 is maintained in a vacuumed state, the heater unit 35 is left at the position shown in FIG. 2, and the assist temperature of the susceptor-2 is set to 450.degree. Then, the substrate 1 is loaded into the chamber 24 and placed on the susceptor-2, and at the same time, the output of the heater is increased and the heater unit 35 is raised to the state shown in FIG. With the substrate temperature raised, the reaction gas is introduced through the gas introduction port 9 and discharged through the gas exhaust port 10 for processing. After the processing, the heater unit 35 is lowered while reducing the output of the heater to obtain the state shown in FIG.
The substrate 1 is automatically transferred to the outside of the chamber 24 while the substrate temperature is lowered. As shown in FIG. 7, since the temperature rising / falling speed is fast and the temperature during film formation is stable, one process is performed in five steps.
It can be completed within a minute, and the productivity comparable to the lamp heating method can be mentioned.

[0016]

According to the present invention, since the resistance heating heater is used, it is necessary to frequently replace and replace the lamp due to heating of the lamp, and it is difficult to detect the temperature and control the temperature. The problem of is solved. Also,
According to the present invention, the resistance heating heater is arranged below the susceptor so as to be movable up and down, and the susceptor and the heater are formed of a material having a high temperature raising / lowering rate. Compared with the case of using the conventional resistance heating heater, the temperature rising / falling speed can be much higher, and the productivity close to that of the case of using the infrared lamp can be obtained.

[0017]

As described above, according to the present invention, problems associated with lamp heating such as frequent replacement of lamps and difficulty of temperature detection method and temperature control are solved. Compared with the case of using a conventional resistance heating heater, the temperature rising / falling rate can be remarkably faster, and the productivity close to that of using an infrared lamp can be achieved. It has a remarkable effect not seen in the membrane device at all.

[0018]

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

FIG. 2 is a vertical sectional view showing an embodiment of the present invention in a state where a heater unit is lowered.

FIG. 3 is a vertical sectional view showing another embodiment of the present invention.

FIG. 4 is a sectional view taken along the line AA ′ of FIG.

FIG. 5 is a vertical sectional view of a susceptor used in the present invention.

6 is a view taken along the line BB ′ of FIG.

FIG. 7 is a graph showing the relationship between the temperature and the operation sequence in the actual processing.

[Explanation of symbols]

 1 substrate to be processed 2 susceptor 3 quartz case 4 resistance heating heater 5 reflector 17 heat insulating material 26 cylinder moving up and down at high speed 32 gas injector 35 heater unit

Claims (13)

[Claims] 1. A rapid thermal processing film forming apparatus for forming a film by flowing a reaction gas while heating a processing substrate on a susceptor in a chamber, wherein the susceptor is made of a material having a high temperature rising / falling rate, A high-speed heat treatment film forming apparatus in which a resistance heating heater formed of a wire having a high temperature rising / falling speed is arranged below the susceptor so as to be vertically movable. 2. The high-speed material according to claim 1, wherein the material having a high temperature raising / lowering rate is a material obtained by CVD-coating SiC on a carbon, or a material obtained by CVD-coating SiC or SiC on SiC. Heat treatment film forming device. 3. The wire having a high temperature rising / falling speed is carbon,
The rapid thermal processing film forming apparatus according to claim 1, wherein the material coated with SiC on the carbon is a SiC sintered body or MoSi ₂ . 4. The rapid thermal processing film forming apparatus according to claim 1, wherein the susceptor is formed in a cylindrical shape with an upper end closed, and a processing substrate can be placed on the upper end. 5. A lower end of the susceptor is fixed to a cylindrical rotary shaft of a magnetic fluid seal, and the susceptor is attached together with the rotary shaft.
The rapid thermal processing film forming apparatus according to claim 4, wherein the apparatus is configured to be rotatable. 6. The rapid thermal processing film forming apparatus according to claim 1, wherein the resistance heating heater is formed by arranging ring-shaped heater wires in a concentric or spiral shape. 7. A radiant energy is provided below the heater wire.
2. The rapid thermal processing film forming apparatus according to claim 1, further comprising a gold-plated reflector or a molybdenum reflector for concentrating the film upward. 8. The rapid thermal processing film formation according to claim 7, wherein said resistance heating heater is divided into a plurality of zones and the outputs of the respective zones can be independently controlled. apparatus. 9. The rapid thermal processing film forming apparatus according to claim 7, wherein the heater and the reflector are hermetically housed in a quartz case. 10. The rapid thermal processing film forming apparatus according to claim 1, wherein the heater is provided with means for moving the heater up and down at high speed in order to adjust the distance between the heater and the susceptor. 11. The rapid thermal processing film forming apparatus according to claim 4, wherein thermocouples are embedded at a plurality of positions on the back surface of the susceptor. 12. Below the lower end of the heater that moves up and down,
The rapid thermal processing film forming apparatus according to claim 1, further comprising a heat insulating material. 13. The rapid thermal processing film forming apparatus according to claim 11, wherein a recess is formed on the back surface of the susceptor, and the tip of the thermocouple is embedded in the recess.