JPH08175869A - Glass-ceramic sintered body and its production - Google Patents
Glass-ceramic sintered body and its productionInfo
- Publication number
- JPH08175869A JPH08175869A JP6320152A JP32015294A JPH08175869A JP H08175869 A JPH08175869 A JP H08175869A JP 6320152 A JP6320152 A JP 6320152A JP 32015294 A JP32015294 A JP 32015294A JP H08175869 A JPH08175869 A JP H08175869A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- sintered body
- ceramic sintered
- zirconia
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
- C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ガラス−セラミック焼
結体およびその製造方法に関するものであり、例えば、
集積回路（ＩＣ）や電子部品を搭載するための基板等に
最適なガラス−セラミック焼結体およびその製造方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass-ceramic sinter and a method for producing the same.
The present invention relates to a glass-ceramic sintered body which is most suitable for a substrate for mounting an integrated circuit (IC) or an electronic component, and a manufacturing method thereof.
【０００２】[0002]
【従来技術】現代では高度情報化時代を迎え、情報伝送
はより高速化・高周波化の傾向にある。自動車電話やパ
ーソナル無線等の移動無線，衛星放送，衛星通信やＣＡ
ＴＶ等のニューメディアでは、機器のコンパクト化が推
し進められており、これに伴い誘電体共振器等のマイク
ロ波用回路素子に対しても小型化が強く望まれている。2. Description of the Related Art In the present age, with the advance of the advanced information age, information transmission tends to be faster and higher in frequency. Mobile radio such as car phone and personal radio, satellite broadcasting, satellite communication and CA
In new media such as TVs, downsizing of devices is being promoted, and accordingly, miniaturization of microwave circuit elements such as dielectric resonators is strongly desired.
【０００３】マイクロ波用回路素子の大きさは、使用電
磁波の波長が基準となる。比誘電率εｒの誘電体中を伝
播する電磁波の波長λは、真空中の伝播波長をλ0 とす
るとλ＝λ0 ／（εｒ）1/2 となる。したがって、素子
は、使用される基板の比誘電率が大きい程、小型にな
る。The size of the microwave circuit element is based on the wavelength of the electromagnetic wave used. The wavelength λ of the electromagnetic wave propagating through the dielectric having the relative permittivity εr is λ = λ 0 / (εr) 1/2 when the propagation wavelength in vacuum is λ 0 . Therefore, the device becomes smaller as the relative permittivity of the substrate used increases.
【０００４】さらに、多層回路基板に種々の電子部品や
入出力端子等を接続する工程上で基板に加わる応力から
基板が破壊したり、欠けを生じたりすることを防止する
為に材料の機械的強度が高いことが要求されている。Further, in order to prevent the substrate from being broken or chipped due to the stress applied to the substrate in the process of connecting various electronic parts, input / output terminals, etc. to the multilayer circuit board, a mechanical material is used. High strength is required.
【０００５】このような要求を満足するため、従来で
は、特開平６−１３２６２１号公報に示すように、樹脂
中に無機誘電体粒子が分散され高誘電率ガラス繊維で強
化された回路用基板が開示されている。この回路用基板
では、比誘電率が高いため機器の小型化を促進でき、ま
た、高誘電率ガラス繊維で強化されているため高強度で
ある。In order to satisfy such requirements, conventionally, as disclosed in Japanese Patent Application Laid-Open No. 6-132621, a circuit board reinforced with a high dielectric constant glass fiber in which inorganic dielectric particles are dispersed in a resin is used. It is disclosed. This circuit board has a high relative permittivity, which facilitates miniaturization of equipment, and has high strength because it is reinforced with a high-dielectric-constant glass fiber.
【０００６】[0006]
【発明が解決しようとする問題点】しかしながら、特開
平６−１３２６２１号公報に開示された回路用基板で
は、焼成温度が４００℃程度であり、銅を配線導体とし
て用いての多層化、微細配線化が困難であり、基板の小
型化には不利であった。However, in the circuit board disclosed in Japanese Unexamined Patent Publication No. 6-132621, the firing temperature is about 400 ° C., and copper is used as a wiring conductor for multilayering and fine wiring. However, it is difficult to reduce the size of the substrate, which is disadvantageous.
【０００７】本発明は、９００〜１０００℃で焼成でき
るとともに、比誘電率の高いガラス−セラミック焼結体
を提供することを目的とする。また、このようなガラス
−セラミック焼結体が容易に得られる製造方法を提供す
ることを目的とする。It is an object of the present invention to provide a glass-ceramic sintered body which can be fired at 900 to 1000 ° C. and has a high relative dielectric constant. Moreover, it aims at providing the manufacturing method which can obtain such a glass-ceramic sintered compact easily.
【０００８】[0008]
【問題点を解決するための手段】本発明者等は、上記問
題点を鋭意検討した結果、ガラスの軟化流動を利用して
９００〜１０００℃で焼成することにより、配線導体と
して金，銀及び銅を用い多層化，微細配線化を実施で
き、また、高誘電率のジルコニアとガラスを組み合わせ
ることによって高い比誘電率を得ることができ、さらに
スピネル型結晶相を析出させることにより高強度化を達
成することができることを知見し、本発明に至った。Means for Solving the Problems The inventors of the present invention have made earnest studies on the above-mentioned problems, and as a result, by firing at 900 to 1000 ° C. by utilizing the softening flow of glass, gold, silver and Copper can be used for multi-layering and fine wiring, and by combining glass with high-dielectric constant zirconia, a high relative dielectric constant can be obtained. Furthermore, by precipitating a spinel type crystal phase, high strength can be obtained. The inventors have found that they can be achieved and have reached the present invention.
【０００９】即ち、本発明のガラス−セラミック焼結体
は、ＺｒをＺｒＯ2 換算で４０〜７０重量％と、残部に
Ｓｉ，Ａｌ，Ｍｇ，ＺｎおよびＢを含有するガラス−セ
ラミック焼結体であって、該焼結体が、ジルコニア結晶
相とスピネル型結晶相（ＭｇＯ・Ａｌ2 Ｏ3 、ＺｎＯ・
Ａｌ2 Ｏ3 ）からなる結晶相と、ガラス相とからなるも
のである。That is, the glass-ceramic sintered body of the present invention is a glass-ceramic sintered body containing 40 to 70% by weight of Zr in terms of ZrO 2 and the balance of Si, Al, Mg, Zn and B. Therefore, the sintered body has a zirconia crystal phase and a spinel type crystal phase (MgO.Al 2 O 3 , ZnO.
It is composed of a crystal phase composed of Al 2 O 3 ) and a glass phase.
【００１０】ここで、ガラス−セラミック焼結体中にお
けるＺｒ量をＺｒＯ2 換算で４０〜７０重量％としたの
は、Ｚｒ量がＺｒＯ2 換算で４０重量％より少ない場合
には、焼結体の比誘電率が１０より低くなり、Ｚｒ量が
ＺｒＯ2 換算で７０重量％より多い場合、焼結体の緻密
化温度が１０００℃より高くなり、銅導体を用いること
が困難となるからである。Here, the Zr content in the glass-ceramic sintered body is set to 40 to 70% by weight in terms of ZrO 2 , because the Zr content is less than 40% by weight in terms of ZrO 2. When the relative dielectric constant of is less than 10 and the amount of Zr is more than 70% by weight in terms of ZrO 2 , the densification temperature of the sintered body is higher than 1000 ° C., and it becomes difficult to use the copper conductor. .
【００１１】ガラス−セラミック焼結体中におけるＺｒ
量はＺｒＯ2 換算で４５〜６０重量％であることが基板
強度の点から望ましく、特には５０〜６０重量％が最適
である。Zr in a glass-ceramic sintered body
The amount is preferably 45 to 60% by weight in terms of ZrO 2 from the viewpoint of substrate strength, and particularly 50 to 60% by weight is optimum.
【００１２】また、ガラス−セラミック焼結体は、ジル
コニア結晶相が主として析出し、この他にスピネル型結
晶相（ＭｇＯ・Ａｌ2 Ｏ3 、ＺｎＯ・Ａｌ2 Ｏ3 ）が析
出する。このように焼結体中にジルコニア結晶相を主と
して存在させることにより比誘電率を向上することがで
きる。また、焼成時における昇温速度を調整することに
より、焼成時にスピネル型結晶相（ＭｇＯ・Ａｌ
2 Ｏ3 ，ＺｎＯ・Ａｌ2 Ｏ3）を十分に析出させる。こ
の結晶相はガラスのネットワークを補強する形態で存在
し、機械的強度の高い焼結体を得ることができる。Further, in the glass-ceramic sintered body, the zirconia crystal phase is mainly precipitated, and besides this, the spinel type crystal phase (MgO.Al 2 O 3 , ZnO.Al 2 O 3 ) is also precipitated. By allowing the zirconia crystal phase to exist mainly in the sintered body as described above, the relative dielectric constant can be improved. In addition, the spinel type crystal phase (MgO.Al
2 O 3 , ZnO.Al 2 O 3 ) is sufficiently precipitated. This crystal phase exists in a form that reinforces the glass network, and a sintered body having high mechanical strength can be obtained.
【００１３】本発明においては、上記した組成を満足す
る限り、他の不純物が混入しても良い。また、焼結体中
にコージェライトやＺｒＳｉ4 が微量存在する場合もあ
るが、なるべく存在させないようにする必要がある。In the present invention, other impurities may be mixed as long as the above composition is satisfied. In addition, although a small amount of cordierite or ZrSi 4 may exist in the sintered body, it is necessary to prevent it from existing as much as possible.
【００１４】本発明のガラス−セラミック焼結体は、図
１に示すように、ジルコニア結晶相１と、スピネル型結
晶相２と、これらの結晶の粒界に存在するＳｉ，Ａｌ，
Ｍｇ，Ｚｎ，Ｂを含有するガラス３とから構成されてい
る。As shown in FIG. 1, the glass-ceramic sintered body of the present invention comprises a zirconia crystal phase 1, a spinel type crystal phase 2, and Si, Al, which are present in the grain boundaries of these crystals.
The glass 3 contains Mg, Zn and B.
【００１５】また、本発明のガラス−セラミック焼結体
は、例えば、ＳｉＯ2 −Ａｌ2 Ｏ3−ＭｇＯ−ＺｎＯ−
Ｂ2 Ｏ3 系結晶性ガラス３０〜６０重量％と、ジルコニ
ア４０〜７０重量％とからなる混合粉末にバインダーを
添加した後、所定形状に成形し、非酸化性雰囲気中にお
いて９００〜１０００℃で焼成することにより得られる
ものである。Further, the glass-ceramic sintered body of the present invention is, for example, SiO 2 —Al 2 O 3 —MgO—ZnO—
After adding a binder to a mixed powder composed of 30 to 60% by weight of B 2 O 3 based crystalline glass and 40 to 70% by weight of zirconia, the mixture is molded into a predetermined shape at 900 to 1000 ° C. in a non-oxidizing atmosphere. It is obtained by firing.
【００１６】ここで、ＳｉＯ2 −Ａｌ2 Ｏ3 −ＭｇＯ−
ＺｎＯ−Ｂ2 Ｏ3 系結晶性ガラスを添加したのは、この
系の結晶性ガラスを用いることによりスピネル型結晶相
が析出し、この結晶相はガラスのネットワークを補強す
る形態で存在し、高強度の焼結体を得ることができるか
らである。また、このような結晶性ガラスを３０〜６０
重量％添加したのは、結晶性ガラス量が３０重量％より
少ない場合には、焼結体の緻密化温度が１０００℃より
高くなり銅導体を用いることができないからであり、結
晶性ガラス量が６０重量％より多いと磁器の抗折強度が
２０ｋｇ／ｃｍ2 より小さくなるからである。ＳｉＯ2
−Ａｌ2 Ｏ3 −ＭｇＯ−ＺｎＯ−Ｂ2 Ｏ3 系結晶性ガラ
スの添加量は４０〜５５重量％であることが望ましく、
特には４０〜５０重量％であることが望ましい。Here, SiO 2 --Al 2 O 3 --MgO--
The ZnO-B 2 O 3 -based crystalline glass was added because a spinel-type crystalline phase was precipitated by using this type of crystalline glass, and this crystalline phase exists in a form that reinforces the glass network, This is because a strong sintered body can be obtained. Further, such a crystalline glass is used in an amount of 30 to 60
The reason why the content of the crystalline glass is less than 30% by weight is that when the amount of the crystalline glass is less than 30% by weight, the densification temperature of the sintered body is higher than 1000 ° C. and the copper conductor cannot be used. This is because the bending strength of the porcelain becomes less than 20 kg / cm 2 if it exceeds 60% by weight. SiO 2
Amount of -Al 2 O 3 -MgO-ZnO- B 2 O 3 based crystalline glass is desirably 40 to 55 wt%,
It is particularly desirable that the amount is 40 to 50% by weight.
【００１７】ＳｉＯ2 −Ａｌ2 Ｏ3 −ＭｇＯ−ＺｎＯ−
Ｂ2 Ｏ3 系結晶性ガラスの組成としては、ＳｉＯ2 ４０
〜４６重量％、Ａｌ2 Ｏ3 ２５〜３０重量％、ＭｇＯ８
〜１３重量％、ＺｎＯ６〜９重量％、Ｂ2 Ｏ3 ８〜１１
重量％が望ましい。SiO 2 --Al 2 O 3 --MgO--ZnO--
The composition of the B 2 O 3 -based crystalline glass is SiO 2 40
To 46 wt%, Al 2 O 3 25~30 wt%, MgO8
To 13 wt%, ZnO6~9 wt%, B 2 O 3 8~11
Weight percent is preferred.
【００１８】また、ジルコニアを４０〜７０重量％添加
したのは、ジルコニアが４０重量％より少ない場合に
は、焼結体の比誘電率が１０より低くなり、ジルコニア
７０重量％より大きい場合、焼結体の緻密化温度が１０
００℃より高くなり、銅導体を用いることが困難となる
からである。ジルコニアの添加量は、４５〜６０重量％
であることが望ましく、特には５０〜６０重量％である
ことが望ましい。Further, 40 to 70% by weight of zirconia is added because when the zirconia is less than 40% by weight, the relative dielectric constant of the sintered body becomes lower than 10, and when the zirconia is more than 70% by weight, the calcination is performed. Consolidation temperature is 10
This is because the temperature becomes higher than 00 ° C. and it becomes difficult to use the copper conductor. Addition amount of zirconia is 45 to 60% by weight
It is desirable that it is, and it is particularly desirable that it is 50 to 60% by weight.
【００１９】非酸化性雰囲気中において９００〜１００
０℃で焼成したのは、９００℃よりも低い温度で焼成し
た場合には、ガラスが結晶化せず、緻密度が低くなり、
１０００℃よりも高い温度で焼成した場合には、ジルコ
ニアがガラス中のＳｉＯ2 と反応してＺｒＳｉＯ4 やコ
ージェライトを生成し、比誘電率を低下させるからであ
る。焼成温度は、９００〜９５０℃であることが望まし
い。900-100 in a non-oxidizing atmosphere
Firing at 0 ° C. means that when fired at a temperature lower than 900 ° C., the glass does not crystallize and the compactness decreases.
This is because, when fired at a temperature higher than 1000 ° C., zirconia reacts with SiO 2 in glass to produce ZrSiO 4 and cordierite, which lowers the relative dielectric constant. The firing temperature is preferably 900 to 950 ° C.
【００２０】本発明においては、９００〜１０００℃に
おいて、コージェライトやＺｒＳｉ０4 の生成を抑制す
るために、焼成温度の保持時間をできるだけ短くする必
要がある。焼成温度における保持時間は１０分以内が望
ましい。また、添加するＺｒＯ2 粉末の平均結晶粒径を
２〜５μｍとすることが望ましい。これはＺｒＯ2 の平
均結晶粒径が小さくなるに従い、ＺｒＳｉＯ4 が生成し
易くなるからである。In the present invention, at 900 to 1000 ° C., in order to suppress the formation of cordierite and ZrSiO 4 , it is necessary to keep the firing temperature as short as possible. The holding time at the firing temperature is preferably 10 minutes or less. Further, it is desirable that the added ZrO 2 powder has an average crystal grain size of 2 to 5 μm. This is because ZrSiO 4 is more likely to be produced as the average crystal grain size of ZrO 2 becomes smaller.
【００２１】このように、焼成時間を短くしたり、Ｚｒ
Ｏ2 の平均結晶粒径を小さくすることにより、結晶相と
して、実質的にＺｒＯ2 結晶相とスピネル型結晶相（Ｍ
ｇＯ・Ａｌ2 Ｏ3 、ＺｎＯ・Ａｌ2 Ｏ3 ）からなる焼結
体が得られる。In this way, the firing time can be shortened and Zr
By reducing the average crystal grain size of O 2 , the ZrO 2 crystal phase and the spinel type crystal phase (M
A sintered body composed of gO.Al 2 O 3 and ZnO.Al 2 O 3 ) can be obtained.
【００２２】本発明においては、ジルコニア原料として
は、正方晶ＺｒＯ2 または立方晶ＺｒＯ2 、或いは正方
晶ＺｒＯ2 および立方晶ＺｒＯ2 が混在した原料を用い
ることが望ましい。これは単斜晶ジルコニアを用いた場
合、温度によって相変態し、これに伴って生じる体積変
化により基板にクラック等が発生するからである。ジル
コニア原料として正方晶ＺｒＯ2 および／または立方晶
ＺｒＯ2 を用いた場合には、焼結体中においても、正方
晶ＺｒＯ2 および／または立方晶ＺｒＯ2 が存在するこ
とになる。In the present invention, the zirconia material, it is desirable to use a tetragonal ZrO 2 or cubic ZrO 2, or tetragonal ZrO 2 and cubic ZrO 2 are mixed raw material. This is because when monoclinic zirconia is used, a phase transformation occurs depending on the temperature, and a crack or the like occurs on the substrate due to a volume change accompanied with the phase transformation. When tetragonal ZrO 2 and / or cubic ZrO 2 is used as the zirconia raw material, tetragonal ZrO 2 and / or cubic ZrO 2 are present even in the sintered body.
【００２３】[0023]
【作用】本発明のガラス−セラミック焼結体では、ジル
コニアとガラスを組み合わせることにより銅を配線導体
として用いての多層化、微細配線化を容易に達成するこ
とができ、また、高誘電率材料であるジルコニアにより
高い比誘電率を得ることができ、さらに、ガラス中にス
ピネル型結晶相を析出させることにより、焼結体の抗折
強度を向上させることができる。In the glass-ceramic sintered body of the present invention, by combining zirconia and glass, it is possible to easily achieve multi-layering and fine wiring by using copper as a wiring conductor, and a high dielectric constant material. It is possible to obtain a high relative permittivity with zirconia, and it is possible to improve the bending strength of the sintered body by precipitating a spinel type crystal phase in the glass.
【００２４】[0024]
【実施例】ＳｉＯ2 −Ａｌ2 Ｏ3 −ＭｇＯ−ＺｎＯ−Ｂ
2 Ｏ3 系結晶性ガラス（ＳｉＯ2：４４、Ａｌ2 Ｏ3 ：
２８、ＭｇＯ：１１、ＺｎＯ：７、Ｂ2 Ｏ3 ：１０重量
％）と、立方晶ジルコニアを表１に示す組成となるよう
に秤量混合し、この混合物に所定のバインダー、可塑剤
およびトルエンを添加し、ドクターブレード法により厚
さ２５０μｍのグリーンシートを作製した。そして、こ
のグリーンシートを、５０℃の温度で１００ｋｇ／ｃｍ
2 の圧力を加える熱圧着により、７層または１８層積層
した。得られた積層体を湿潤窒素中７５０℃で脱バイン
ダーした後、乾燥窒素中において表１に示すような焼成
温度，保持時間で焼成してガラス−セラミック焼結体を
得た。EXAMPLES SiO 2 -Al 2 O 3 -MgO- ZnO-B
2 O 3 type crystalline glass (SiO 2 : 44, Al 2 O 3 :
28, MgO: 11, ZnO: 7, B 2 O 3 : 10 wt%) and cubic zirconia were weighed and mixed so as to have the composition shown in Table 1, and a predetermined binder, a plasticizer and toluene were added to this mixture. Then, a green sheet having a thickness of 250 μm was prepared by the doctor blade method. Then, this green sheet is 100 kg / cm at a temperature of 50 ° C.
Seven layers or 18 layers were laminated by thermocompression bonding applying a pressure of 2 . The obtained laminated body was debindered in wet nitrogen at 750 ° C., and then fired in dry nitrogen at a firing temperature and a holding time as shown in Table 1 to obtain a glass-ceramic sintered body.
【００２５】[0025]
【表１】 [Table 1]
【００２６】得られたガラス−セラミック焼結体につい
て、比誘電率および抗折強度を測定した。比誘電率は、
グリーンシートを７層積層して得られた焼結体を５０ｍ
ｍ×５０ｍｍ厚み１ｍｍの試料形状に加工し、ネットワ
ークアナライザーを用いた空洞共振器法により、、サフ
ァイヤを充填した円筒空洞共振器の間に試料を挟んで構
成される共振器のＴＥ011 モードの共振特性より算出し
た。The relative permittivity and bending strength of the obtained glass-ceramic sintered body were measured. The relative permittivity is
50m of sintered body obtained by stacking 7 layers of green sheets
Resonance of TE 011 mode of a resonator formed by sandwiching a sample between cylindrical cavities filled with sapphire by the cavity resonator method using a network analyzer and processed into a sample shape of m × 50 mm and thickness of 1 mm. Calculated from the characteristics.
【００２７】また、抗折強度は、グリーンシートを１８
層積層して得られた焼結体を長さ４０ｍｍ，厚さ３ｍ
ｍ，幅４ｍｍに加工し、ＪＩＳ−Ｃ−２１４１の規定に
準じて３点曲げ試験を行うことにより求めた。結果を表
１に示した。The bending strength of the green sheet is 18
The sintered body obtained by stacking layers has a length of 40 mm and a thickness of 3 m.
m, width 4 mm, and a three-point bending test was performed according to JIS-C-2141. The results are shown in Table 1.
【００２８】この表１より、本発明のガラス−セラミッ
ク焼結体は、９００〜１０００℃で焼成することがで
き、比誘電率が１０以上であり、抗折強度が２２ｋｇ／
ｍｍ2以上であることが判る。From Table 1, the glass-ceramic sintered body of the present invention can be fired at 900 to 1000 ° C., the relative dielectric constant is 10 or more, and the bending strength is 22 kg /
It can be seen that it is at least mm 2 .
【００２９】[0029]
【発明の効果】本発明のガラス−セラミック焼結体で
は、９００〜１０００℃で焼成できるため銅を配線導体
として用いることができるとともに、比誘電率が高く、
さらに高強度とすることができ、機器の小型化を促進す
ることができるとともに、基板材料の高強度化により入
出力端子部に施すリードの接合や実装における基板の信
頼性が向上することができる。In the glass-ceramic sintered body of the present invention, since it can be fired at 900 to 1000 ° C., copper can be used as the wiring conductor and the relative dielectric constant is high.
Further, the strength can be made higher, the miniaturization of the device can be promoted, and the strength of the board material makes it possible to improve the reliability of the board in the joining of leads to the input / output terminal portion and the mounting. .
【図１】本発明のガラス−セラミック焼結体の模式図で
ある。FIG. 1 is a schematic view of a glass-ceramic sintered body of the present invention.
１・・・ジルコニア結晶相 ２・・・スピネル型結晶相 ３・・・ガラス 1 ... Zirconia crystal phase 2 ... Spinel type crystal phase 3 ... Glass
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 1/03 ６１０ Ｃ 7511−4Ｅ 3/46 Ｈ 6921−4Ｅ Ｔ 6921−4Ｅ Ｈ０１Ｌ 23/14 Ｃ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI Technical indication H05K 1/03 610 C 7511-4E 3/46 H 6921-4E T 6921-4E H01L 23/14 C
Claims (2)
と、残部にＳｉ，Ａｌ，Ｍｇ，ＺｎおよびＢを含有する
ガラス−セラミック焼結体であって、該焼結体が、ジル
コニア結晶相とスピネル型結晶相（ＭｇＯ・Ａｌ
2 Ｏ3 、ＺｎＯ・Ａｌ2Ｏ3 ）からなる結晶相と、ガラ
ス相とからなることを特徴とするガラス−セラミック焼
結体。1. Zr is 40 to 70% by weight in terms of ZrO 2.
And a glass-ceramic sintered body containing Si, Al, Mg, Zn and B in the balance, the sintered body being a zirconia crystal phase and a spinel type crystal phase (MgO.Al).
A glass-ceramic sintered body, comprising a crystal phase composed of 2 O 3 , ZnO.Al 2 O 3 ) and a glass phase.
Ｂ2 Ｏ3 系結晶性ガラス３０〜６０重量％と、ジルコニ
ア４０〜７０重量％とからなる混合粉末にバインダーを
添加した後、所定形状に成形し、非酸化性雰囲気中にお
いて９００〜１０００℃で焼成することを特徴とするガ
ラス−セラミック焼結体の製造方法。2. SiO 2 --Al 2 O 3 --MgO--ZnO--
After adding a binder to a mixed powder composed of 30 to 60% by weight of B 2 O 3 based crystalline glass and 40 to 70% by weight of zirconia, the mixture is molded into a predetermined shape at 900 to 1000 ° C. in a non-oxidizing atmosphere. A method for producing a glass-ceramic sintered body, which comprises firing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06320152A JP3085636B2 (en) | 1994-12-22 | 1994-12-22 | Glass-ceramic sintered body and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06320152A JP3085636B2 (en) | 1994-12-22 | 1994-12-22 | Glass-ceramic sintered body and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08175869A true JPH08175869A (en) | 1996-07-09 |
| JP3085636B2 JP3085636B2 (en) | 2000-09-11 |
Family
ID=18118292
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06320152A Expired - Fee Related JP3085636B2 (en) | 1994-12-22 | 1994-12-22 | Glass-ceramic sintered body and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3085636B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008126486A1 (en) * | 2007-04-09 | 2008-10-23 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition, ceramic substrate, and method for producing the same |
| CN115340376A (en) * | 2022-06-28 | 2022-11-15 | 清华大学深圳国际研究生院 | Ceramic substrate for LTCC (Low temperature Co-fired ceramic), and preparation method and application thereof |
-
1994
- 1994-12-22 JP JP06320152A patent/JP3085636B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008126486A1 (en) * | 2007-04-09 | 2008-10-23 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition, ceramic substrate, and method for producing the same |
| JPWO2008126486A1 (en) * | 2007-04-09 | 2010-07-22 | 株式会社村田製作所 | Ceramic substrate and manufacturing method thereof |
| US7790271B2 (en) | 2007-04-09 | 2010-09-07 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition, ceramic substrate, and method for producing the same |
| JP5104761B2 (en) * | 2007-04-09 | 2012-12-19 | 株式会社村田製作所 | Ceramic substrate and manufacturing method thereof |
| CN115340376A (en) * | 2022-06-28 | 2022-11-15 | 清华大学深圳国际研究生院 | Ceramic substrate for LTCC (Low temperature Co-fired ceramic), and preparation method and application thereof |
| CN115340376B (en) * | 2022-06-28 | 2023-08-08 | 清华大学深圳国际研究生院 | Ceramic substrate for LTCC and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3085636B2 (en) | 2000-09-11 |
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