JPH08167324A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
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- JPH08167324A JPH08167324A JP6308805A JP30880594A JPH08167324A JP H08167324 A JPH08167324 A JP H08167324A JP 6308805 A JP6308805 A JP 6308805A JP 30880594 A JP30880594 A JP 30880594A JP H08167324 A JPH08167324 A JP H08167324A
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、誘電体共振器等の材料
として好適な誘電体磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition suitable as a material for a dielectric resonator or the like.
【0002】[0002]
【従来技術およびその問題点】近年、マイクロ波回路の
集積化に伴い、小型で高性能な誘電体共振器が求められ
ている。このような誘電体共振器に使用される誘電体磁
器組成物には、比誘電率εr が大きいこと、無負荷Qが
大きいこと、共振周波数の温度係数τf が小さいこと等
の特性が要求されている。2. Description of the Related Art In recent years, with the integration of microwave circuits, a compact and high-performance dielectric resonator has been demanded. The dielectric ceramic composition used for such a dielectric resonator is required to have characteristics such as a large relative permittivity ε r , a large unloaded Q, and a small temperature coefficient τ f of the resonance frequency. Has been done.
【0003】このような誘電体磁器組成物として、Ba
O−TiO2 −Nd2 O3 系の誘電体磁器組成物につい
て提案〔Ber.Dt.Keram.Ges.,55(1978)Nr.7;特開昭60
−35406号公報〕、あるいはBaO−TiO2 −N
d2 O3 −Bi2 O3 系(特開昭62−72558号公
報)について提案されている。As such a dielectric ceramic composition, Ba
Proposed O-TiO 2 —Nd 2 O 3 based dielectric ceramic composition [Ber. Dt. Keram. Ges., 55 (1978) Nr. 7;
-35406 JP], or BaO-TiO 2 -N
A d 2 O 3 -Bi 2 O 3 system (Japanese Patent Laid-Open No. 62-72558) has been proposed.
【0004】最近、誘電体磁器組成物を積層した積層チ
ップコンデンサ、積層誘電体共振器等が開発されてお
り、磁器組成物と内部電極との同時焼成による積層化が
行われている。しかしながら、前記誘電体磁器組成物は
焼成温度が1300℃〜1400℃と高いため内部電極
との同時焼成を行うことは困難な面があり、積層化構造
とするためには電極材料として高温に耐えるパラジウム
(Pd)や白金(Pt)等の材料に限定されていた。こ
のため、電極材料として安価な銀(Ag)、銀−パラジ
ウム(Ag−Pd)、銅(Cu)を使用して1200℃
以下の低温で同時焼成できる誘電体磁器組成物が求めら
れている。Recently, a laminated chip capacitor, a laminated dielectric resonator, etc. in which dielectric ceramic compositions are laminated have been developed, and the ceramic composition and internal electrodes are laminated by simultaneous firing. However, since the firing temperature of the dielectric ceramic composition is as high as 1300 ° C. to 1400 ° C., it is difficult to perform simultaneous firing with the internal electrodes, and in order to form a laminated structure, it can withstand high temperatures as an electrode material. It has been limited to materials such as palladium (Pd) and platinum (Pt). Therefore, inexpensive silver (Ag), silver-palladium (Ag-Pd), and copper (Cu) are used as the electrode material at 1200 ° C.
There is a demand for a dielectric ceramic composition that can be co-fired at the following low temperatures.
【0005】[0005]
【発明の目的】本発明の目的は、誘電体共振器等の材料
として優れた特性、特に高誘電率で、無負荷Qが大き
く、共振周波数の温度変化が小さいという特性を有し、
しかも低温で焼成した場合にも焼結性が良好な誘電体磁
器組成物を提供することにある。It is an object of the present invention to have excellent characteristics as a material for a dielectric resonator or the like, in particular to have a high dielectric constant, a large no-load Q, and a small change in resonance frequency with temperature.
Moreover, it is to provide a dielectric ceramic composition having good sinterability even when fired at a low temperature.
【0006】[0006]
【問題点を解決するための手段】本発明は、主成分が組
成式、xBaO−yTiO2 −zNd2 O3 −tSm2
O3 −wBi2 O3 (式中、0.1≦x≦0.2、0.
5≦y≦0.8、0.01≦z≦0.2、0≦t≦0.
2、0.005<w<0.05、x+y+z+t+w=
1である。)で表されるバリウム、チタン、ネオジム、
サマリウム、ビスマスおよび酸素からなる誘電体磁器組
成物であり、かつ副成分としてPbO、ZnOおよびB
2 O3 から構成されるガラス粉末ならびにGeO2 およ
びLi2 Oを含有し、主成分に対する副成分ガラス粉末
の含有量a(重量%)が1≦a≦25、GeO2 の含有
量b(重量%)が0.5≦b≦10およびLi2 Oの含
有量c(重量%)が0.04≦c≦4であることを特徴
とする誘電体磁器組成物に関する。Means for Solving the problems] The present invention is a main component composition formula, xBaO-yTiO 2 -zNd 2 O 3 -tSm 2
O 3 -wBi 2 O 3 (wherein 0.1 ≦ x ≦ 0.2, 0.
5 ≦ y ≦ 0.8, 0.01 ≦ z ≦ 0.2, 0 ≦ t ≦ 0.
2, 0.005 <w <0.05, x + y + z + t + w =
It is 1. ) Represented by barium, titanium, neodymium,
A dielectric ceramic composition composed of samarium, bismuth, and oxygen, and PbO, ZnO, and B as auxiliary components.
Glass powder composed of 2 O 3 and GeO 2 and Li 2 O, the content a (% by weight) of the accessory glass powder with respect to the main component is 1 ≦ a ≦ 25, and the content b of GeO 2 is b (weight). %) 0.5 ≦ b ≦ 10 and the Li 2 O content c (% by weight) is 0.04 ≦ c ≦ 4.
【0007】本発明によれば、組成式xBaO−yTi
O2 −zNd2 O3 −tSm2 O3−wBi2 O3 で表
される誘電体磁器組成物に、副成分としてPbO、Zn
OおよびB2 O3 から構成されるガラス粉末ならびにG
eO2 およびLi2 Oを含有させることにより、低温焼
結でき、かつ高誘電率で、無負荷Qが大きく、共振周波
数の温度変化が小さいという特性を有する誘電体磁器組
成物を得ることができる。According to the invention, the composition formula xBaO-yTi
The dielectric ceramic composition represented by O 2 -zNd 2 O 3 -tSm 2 O 3 -wBi 2 O 3 contains PbO and Zn as auxiliary components.
Glass powder composed of O and B 2 O 3 and G
By containing eO 2 and Li 2 O, it is possible to obtain a dielectric ceramic composition which can be sintered at a low temperature, has a high dielectric constant, has a large unloaded Q, and has a small temperature change in resonance frequency. .
【0008】本発明において、BaOのモル分率が過度
に大きい場合には、共振しなくなり、過度に小さい場合
には、誘電率、無負荷Qが小さくなる。TiO2 のモル
分率が過度に大きい場合には、共振周波数の温度係数が
大きくなり、過度に小さい場合には、誘電率が小さくな
る。Nd2 O3 のモル分率が過度に大きい場合には、誘
電率、無負荷Qが小さくなり、過度に小さい場合には、
共振周波数の温度係数が大きくなる。Sm2 O3 のモル
分率が過度に大きい場合には、誘電率、無負荷Qが小さ
くなる。Bi2 O3 のモル分率が過度に大きい場合に
は、誘電率、無負荷Qが小さくなり、過度に小さい場合
には、共振周波数の温度係数が大きくなる。In the present invention, when the molar fraction of BaO is excessively large, resonance does not occur, and when it is excessively small, the dielectric constant and the no-load Q become small. When the mole fraction of TiO 2 is too large, the temperature coefficient of the resonance frequency becomes large, and when it is too small, the dielectric constant becomes small. When the mole fraction of Nd 2 O 3 is excessively large, the dielectric constant and unloaded Q become small, and when it is excessively small,
The temperature coefficient of the resonance frequency becomes large. When the mole fraction of Sm 2 O 3 is excessively large, the dielectric constant and unloaded Q become small. When the mole fraction of Bi 2 O 3 is excessively large, the dielectric constant and the no-load Q become small, and when it is excessively small, the temperature coefficient of the resonance frequency becomes large.
【0009】また、本発明において、主成分に対する副
成分PbO、ZnOおよびB2 O3から構成されるガラ
ス粉末の含有量a(重量%)ならびにGeO2 の含有量
b(重量%)が過度に大きい場合には、無負荷Qが小さ
くなり、Li2 Oの含有量c(重量%)が過度に大きい
場合には、共振しなくなる。また、PbO、ZnOおよ
びB2 O3 から構成されるガラス粉末ならびにGeO2
の含有量b(重量%)が過度に小さいかゼロの場合に
は、1200℃以下での低温焼成が困難になる。Li2
Oを含有させることにより、焼結温度がさらに低下し、
Agの内部電極が容易に形成可能となる。したがって、
副成分PbO、ZnOおよびB2 O3 から構成されるガ
ラス粉末の含有量a(重量%)ならびにGeO2 の含有
量b(重量%)およびLi2 Oの含有量c(重量%)は
上記範囲に設定される。副成分PbO、ZnOおよびB
2 O3 から構成されるガラス粉末において、PbO、Z
nOおよびB2 O3 の構成割合は特に限定されないが、
ZnOの含有量が過度に大きい場合にはガラスの軟化点
が上昇し、低温焼成が困難になるため、ガラス粉末中の
ZnOの含有量は50重量%以下が好ましい。Further, in the present invention, the content a (% by weight) of the glass powder composed of the subcomponents PbO, ZnO and B 2 O 3 and the content b (% by weight) of GeO 2 with respect to the main component are excessive. When it is large, the no-load Q is small, and when the content c (wt%) of Li 2 O is too large, resonance does not occur. Further, glass powder composed of PbO, ZnO and B 2 O 3 and GeO 2
When the content b (% by weight) is too small or zero, low temperature firing at 1200 ° C. or lower becomes difficult. Li 2
By including O, the sintering temperature is further lowered,
The Ag internal electrodes can be easily formed. Therefore,
The content a (% by weight) of the glass powder composed of the subcomponents PbO, ZnO and B 2 O 3, the content b (% by weight) of GeO 2 and the content c (% by weight) of Li 2 O are within the above range. Is set to. Subcomponents PbO, ZnO and B
In a glass powder composed of 2 O 3 , PbO, Z
Although the composition ratio of nO and B 2 O 3 is not particularly limited,
When the content of ZnO is excessively large, the softening point of the glass rises and low-temperature firing becomes difficult. Therefore, the content of ZnO in the glass powder is preferably 50% by weight or less.
【0010】本発明の誘電体磁器組成物の好適な製造法
の一例を次に説明する。炭酸バリウム、酸化チタン、酸
化ネオジム、酸化サマリウムおよび酸化ビスマスの出発
原料を各所定量ずつ水、アルコ−ル等の溶媒と共に湿式
混合する。続いて、水、アルコ−ル等を除去した後、粉
砕し、酸素含有ガス雰囲気(例えば空気雰囲気)下に1
000〜1300℃で約1〜5時間程度仮焼する。この
ようにして得られた仮焼粉と副成分PbO、ZnOおよ
びB2 O3 から構成されるガラス粉末、GeO2 、Li
2 CO3 を、アルコ−ル等の溶媒と共に湿式混合、粉砕
する。続いて、水、アルコ−ル等を除去した後、ポリビ
ニルアルコ−ルの如き有機バインダと共に混合して均質
にし、乾燥、粉砕、加圧成型(圧力100〜1000K
g/cm2 程度)する。得られた成形物を空気の如き酸
素含有ガス雰囲気下に850℃〜1100℃で焼成する
ことにより上記組成式で表される誘電体磁器組成物が得
られる。An example of a suitable method for producing the dielectric ceramic composition of the present invention will be described below. Starting materials of barium carbonate, titanium oxide, neodymium oxide, samarium oxide, and bismuth oxide are wet-mixed in predetermined amounts with a solvent such as water or alcohol. Then, after removing water, alcohol, etc., the product is pulverized and placed under an oxygen-containing gas atmosphere (for example, an air atmosphere) to obtain 1
Calcination is performed at 000 to 1300 ° C. for about 1 to 5 hours. A glass powder composed of the calcined powder thus obtained and the subcomponents PbO, ZnO and B 2 O 3 , GeO 2 , Li
2 CO 3 is wet mixed and pulverized with a solvent such as alcohol. Then, after removing water, alcohol, etc., they are mixed with an organic binder such as polyvinyl alcohol to be homogenized, dried, crushed and pressure molded (pressure 100 to 1000 K).
g / cm 2 ). The dielectric ceramic composition represented by the above composition formula is obtained by firing the obtained molded product in an oxygen-containing gas atmosphere such as air at 850 ° C to 1100 ° C.
【0011】このようにして得られた誘電体磁器組成物
は、必要により適当な形状およびサイズに加工、あるい
はドクタ−ブレ−ド法等によるシ−ト成形およびシ−ト
と電極による積層化により、誘電体共振器、誘電体基
板、積層素子等の材料として利用できる。The dielectric ceramic composition thus obtained is processed into a suitable shape and size as required, or by sheet molding by a doctor blade method or the like and lamination by a sheet and an electrode. It can be used as a material for a dielectric resonator, a dielectric substrate, a laminated element, and the like.
【0012】なお、バリウム、チタン、ネオジム、サマ
リウム、ビスマス、鉛、亜鉛、ホウ素、ゲルマニウム、
リチウムの原料としては、BaCO3 、TiO2 、Nd
2 O 3 、Sm2 O3 、Bi2 O3 、PbO、ZnO、B
2 O3 、GeO2 、Li2 CO3 の他に、焼成時に酸化
物となる硝酸塩、水酸化物等を使用することができる。Barium, titanium, neodymium, summer
Lithium, bismuth, lead, zinc, boron, germanium,
As a raw material of lithium, BaCO3, TiO2, Nd
2O 3, Sm2O3, Bi2O3, PbO, ZnO, B
2O3, GeO2, Li2CO3Besides, oxidation during firing
It is possible to use a nitrate, a hydroxide, or the like that is a substance.
【0013】[0013]
【実施例】以下に実施例および比較例を示し、本発明を
さらに具体的に説明する。 実施例1 炭酸バリウム粉末(BaCO3 )0.13モル、酸化チ
タン粉末(TiO2 )0.69モル、酸化ネオジム紛末
(Nd2 O3 )0.16モル、酸化ビスマス紛末(Bi
2 O3 )0.02モルをエタノ−ルと共にボ−ルミルに
入れ、12時間湿式混合した。溶液を脱媒後、粉砕し、
空気雰囲気下1250℃で仮焼した。また、酸化鉛粉末
(PbO)84wt%、酸化亜鉛粉末(ZnO)7wt
%および酸化ホウ素粉末(B2 O3 )9wt%から構成
されるガラス粉末Aを常法により調製した。上記で得ら
れた仮焼物にこのPbO、ZnOおよびB2 O3 から構
成されるガラス粉末A2wt%ならびに酸化ゲルマニウ
ム粉末(GeO2 )3wt%および炭酸リチウム粉末
(Li2 CO3 )1wt%(Li2 O換算で0.4wt
%を添加しエタノ−ルと共にボ−ルミルに入れ、48時
間湿式混合した。溶液を脱媒後、粉砕し、この粉砕物に
適量のポリビニルアルコ−ル溶液を加えて乾燥後、直径
12mmφ、厚み4mmtのペレットに成形し、空気雰
囲気下において945℃で2時間焼成した。EXAMPLES The present invention will be described more specifically by showing Examples and Comparative Examples below. Example 1 barium carbonate powder (BaCO 3) 0.13 moles of titanium oxide powder (TiO 2) 0.69 mol of neodymium oxide紛末(Nd 2 O 3) 0.16 mol, bismuth oxide紛末(Bi
0.02 mol of 2 O 3 ) was put in a ball mill together with ethanol and wet mixed for 12 hours. After desolvating the solution, crush it,
It was calcined at 1250 ° C in an air atmosphere. In addition, lead oxide powder (PbO) 84 wt%, zinc oxide powder (ZnO) 7 wt
% And boron oxide powder (B 2 O 3 ) 9 wt%, a glass powder A was prepared by a conventional method. The PbO to calcine obtained above, the glass powder A2wt% and germanium oxide powder (GeO 2) 3wt% and lithium carbonate powder made from ZnO and B 2 O 3 (Li 2 CO 3) 1wt% (Li 2 0.4 wt in O conversion
% And added to a ball mill with ethanol and wet mixed for 48 hours. After desolvating the solution, it was pulverized, an appropriate amount of polyvinyl alcohol solution was added to the pulverized product, and the pulverized product was dried.
【0014】こうして得られた磁器組成物を直径7mm
φ、厚み約3mmtの大きさに加工したのち、誘電共振
法によって測定し、共振周波数(3〜6GHz)におけ
る無負荷Q、比誘電率および共振周波数の温度係数を求
めた。その結果を表2に示す。The porcelain composition thus obtained has a diameter of 7 mm.
After processing into a size of φ and a thickness of about 3 mmt, measurement was performed by the dielectric resonance method, and the unloaded Q at the resonance frequency (3 to 6 GHz), the relative permittivity, and the temperature coefficient of the resonance frequency were obtained. The results are shown in Table 2.
【0015】実施例2〜21および比較例1〜16 実施例1の炭酸バリウム、酸化チタン、酸化ネオジム、
酸化サマリウムおよび酸化ビスマスの混合割合と、副成
分であるPbO、ZnOおよびB2 O3 から構成される
ガラス粉末の種類(ガラス粉末B:PbO80wt%,
ZnO10wt%,B2 O3 10wt%)と副成分の添
加量とを表1記載のように代えた他は、実施例1と同様
にして誘電体磁器組成物を製造し、特性を測定した。そ
の結果を表2に示す。Examples 2 to 21 and Comparative Examples 1 to 16 Barium carbonate, titanium oxide, neodymium oxide of Example 1
The mixing ratio of samarium oxide and bismuth oxide and the kind of glass powder composed of PbO, ZnO and B 2 O 3 which are the accessory components (glass powder B: PbO 80 wt%,
ZnO 10 wt%, B 2 O 3 10 wt%) and the amounts of the subcomponents added were changed as shown in Table 1, and a dielectric ceramic composition was produced in the same manner as in Example 1, and the characteristics were measured. The results are shown in Table 2.
【0016】[0016]
【表1】 [Table 1]
【0017】[0017]
【表2】 [Table 2]
【0018】[0018]
【発明の効果】本発明によれば、比誘電率εr が大き
く、かつ無負荷Q値も大きく、しかも共振周波数の温度
係数τf の小さい誘電体磁器組成物を提供することがで
きる。また、低温焼結が可能であり、Ag、Ag−P
d、Cu等を内部電極とした積層化が可能な誘電体磁器
組成物を提供することができる。According to the present invention, it is possible to provide a dielectric ceramic composition having a large relative permittivity ε r , a large unloaded Q value, and a small temperature coefficient τ f of the resonance frequency. In addition, low temperature sintering is possible, and Ag, Ag-P
It is possible to provide a dielectric porcelain composition which can be laminated by using d, Cu or the like as an internal electrode.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01P 7/10 (72)発明者 石飛 信一 山口県宇部市大字小串1978番地の5 宇部 興産株式会社宇部研究所内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H01P 7/10 (72) Inventor Shinichi Ishihii 5 Ube Industries Ltd., 5 1978, Kogushi, Ube City, Yamaguchi Prefecture Company Ube Institute
Claims (1)
2 −zNd2 O3 −tSm2 O3 −wBi2 O3 (式
中、0.1≦x≦0.2、0.5≦y≦0.8、0.0
1≦z≦0.2、0≦t≦0.2、0.005<w<
0.05、x+y+z+t+w=1である。)で表され
るバリウム、チタン、ネオジム、サマリウム、ビスマス
および酸素からなる誘電体磁器組成物であり、かつ副成
分としてPbO、ZnOおよびB2 O3 から構成される
ガラス粉末ならびにGeO2 およびLi2 Oを含有し、
主成分に対する副成分ガラス粉末の含有量a(重量%)
が1≦a≦25、GeO2 の含有量b(重量%)が0.
5≦b≦10およびLi2 Oの含有量c(重量%)が
0.04≦c≦4であることを特徴とする誘電体磁器組
成物。1. The main component is a composition formula, xBaO-yTiO.
2 -zNd 2 O 3 -tSm 2 O 3 -wBi 2 O 3 ( where, 0.1 ≦ x ≦ 0.2,0.5 ≦ y ≦ 0.8,0.0
1 ≦ z ≦ 0.2, 0 ≦ t ≦ 0.2, 0.005 <w <
0.05 and x + y + z + t + w = 1. ) Is a dielectric porcelain composition consisting of barium, titanium, neodymium, samarium, bismuth and oxygen, and is a glass powder composed of PbO, ZnO and B 2 O 3 as auxiliary components, and GeO 2 and Li 2 Contains O,
Content a of glass powder as an accessory component to the main component (% by weight)
Is 1 ≦ a ≦ 25, and the GeO 2 content b (% by weight) is 0.
5. Dielectric ceramic composition, wherein 5 ≦ b ≦ 10 and a Li 2 O content c (% by weight) is 0.04 ≦ c ≦ 4.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30880594A JP3467876B2 (en) | 1994-12-13 | 1994-12-13 | Dielectric porcelain composition |
US08/520,580 US5827792A (en) | 1994-08-30 | 1995-08-29 | Dielectric ceramic composition |
DE69513472T DE69513472T2 (en) | 1994-08-30 | 1995-08-30 | Dielectrical ceramic composition |
EP95113625A EP0701981B1 (en) | 1994-08-30 | 1995-08-30 | Dielectric ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30880594A JP3467876B2 (en) | 1994-12-13 | 1994-12-13 | Dielectric porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08167324A true JPH08167324A (en) | 1996-06-25 |
JP3467876B2 JP3467876B2 (en) | 2003-11-17 |
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ID=17985530
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Application Number | Title | Priority Date | Filing Date |
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JP30880594A Expired - Fee Related JP3467876B2 (en) | 1994-08-30 | 1994-12-13 | Dielectric porcelain composition |
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JP (1) | JP3467876B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6184165B1 (en) | 1998-07-15 | 2001-02-06 | Tdk Corporation | Dielectric porcelain composition |
US6340649B1 (en) | 1999-03-16 | 2002-01-22 | Tdk Corporation | Composition of dielectric ceramics and producing method thereof |
WO2006109465A1 (en) | 2005-03-31 | 2006-10-19 | Matsushita Electric Industrial Co., Ltd. | Dielectric porcelain composition and high frequency device using the same |
-
1994
- 1994-12-13 JP JP30880594A patent/JP3467876B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6184165B1 (en) | 1998-07-15 | 2001-02-06 | Tdk Corporation | Dielectric porcelain composition |
US6340649B1 (en) | 1999-03-16 | 2002-01-22 | Tdk Corporation | Composition of dielectric ceramics and producing method thereof |
WO2006109465A1 (en) | 2005-03-31 | 2006-10-19 | Matsushita Electric Industrial Co., Ltd. | Dielectric porcelain composition and high frequency device using the same |
EP1864957A1 (en) * | 2005-03-31 | 2007-12-12 | Matsushita Electric Industrial Co., Ltd. | Dielectric porcelain composition and high frequency device using the same |
EP1864957A4 (en) * | 2005-03-31 | 2008-07-16 | Matsushita Electric Ind Co Ltd | Dielectric porcelain composition and high frequency device using the same |
JPWO2006109465A1 (en) * | 2005-03-31 | 2008-10-16 | 松下電器産業株式会社 | Dielectric ceramic composition and high frequency device using the same |
US7592886B2 (en) | 2005-03-31 | 2009-09-22 | Panasonic Corporation | Dielectric porcelain composition and high frequency device using the same |
JP4613952B2 (en) * | 2005-03-31 | 2011-01-19 | パナソニック株式会社 | Dielectric ceramic composition and high frequency device using the same |
Also Published As
Publication number | Publication date |
---|---|
JP3467876B2 (en) | 2003-11-17 |
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