JPH08166469A - Clock dial and production thereof - Google Patents

Abstract

PURPOSE: To protect a dual against damage due to an impact or during the assembling process by providing a glass layer on a substrate of a metal material and then providing an electrode and a semiconductor layer thereon. CONSTITUTION: A glass layer 13 is provided on a substrate 11 of a metal material (an alloy of iron, nickel and cobalt, i.e., kovar). A lower electrode 15 of metal film is provided on the upper surface of the glass layer 13 and an anti- diffusion layer 17 is provided thereon. Furthermore, a semiconductor layer 19 (solar cell) comprising an amorphous silicon film is provided thereon and an upper electrode 21 of transparent conductive film is provided to be connected with the anti-diffusion layer 17. Finally, a protective film 23 of acryl resin or epoxy resin is provided. The anti-diffusion layer 17 prevents mutual diffusion between the lower electrode 15 and the semiconductor layer 19. Since the substrate 11 is composed of a metal material, it is protected against chipping or cracking when a clock is subjected to impact at the time of machining a dial or assembling the dial into the clock.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dial plate which is a time display means of a timepiece having a solar cell and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, a dial for a timepiece having a solar cell has a lower electrode, a semiconductor layer and an upper electrode which are sequentially provided on a glass plate.

[0003]

SUMMARY OF THE INVENTION With such means,
Since the glass plate is likely to be chipped or cracked, there is a problem that the dial will be damaged during processing as a dial, during the assembly process of incorporating the dial into the watch, or when the watch is impacted. .

An object of the present invention is to solve the above problems and provide a structure of a timepiece dial which prevents the dial from being damaged, and a manufacturing method for forming this structure.

[0005]

In order to achieve the above object, the timepiece dial and its manufacturing method of the present invention employ the means described below.

The timepiece dial of the present invention has a glass layer provided on a substrate, a lower electrode provided on the glass layer, a semiconductor layer provided on the lower electrode, and a semiconductor layer provided on the semiconductor layer and connected to the lower electrode. It is characterized by having an upper electrode thus provided and a central hole.

The timepiece dial of the present invention has a glass layer provided on a substrate, a lower electrode and a diffusion preventing layer provided on the glass layer, a semiconductor layer provided on the lower electrode, and a semiconductor layer provided on the semiconductor layer. It is characterized by having an upper electrode provided so as to be connected to the diffusion prevention layer and a central hole.

The timepiece dial of the present invention has a glass layer provided on a substrate, a lower electrode provided on the glass layer, a semiconductor layer provided on the lower electrode, and a semiconductor layer provided on the semiconductor layer and connected to the lower electrode. It is characterized in that it has an upper electrode thus provided, a protective film, and a central hole.

The timepiece dial of the present invention has a glass layer provided on a substrate, a lower electrode and a diffusion preventing layer provided on the glass layer, a semiconductor layer provided on the lower electrode, and a semiconductor layer provided on the semiconductor layer. It is characterized by having an upper electrode provided so as to be connected to the diffusion prevention layer, a protective film, and a central hole.

The method of manufacturing a timepiece dial of the present invention comprises the steps of forming a coated glass film on a substrate and baking it to form a glass layer, forming a lower electrode, forming a semiconductor layer, and forming a semiconductor layer. And forming an upper electrode provided on the layer and connected to the lower electrode.

The method of manufacturing a timepiece dial of the present invention comprises the steps of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, forming a lower electrode and a diffusion preventing layer, and forming a semiconductor layer. And forming an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer.

The method of manufacturing a timepiece dial of the present invention comprises the steps of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, forming a lower electrode, forming a semiconductor layer, and forming a semiconductor layer. The method is characterized by including a step of forming an upper electrode provided on the layer and connected to the lower electrode, and a step of forming a protective film.

The method of manufacturing a timepiece dial of the present invention comprises the steps of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, forming a lower electrode and a diffusion preventing layer, and forming a semiconductor layer. And forming an upper electrode which is provided on the semiconductor layer and is connected to the diffusion prevention layer, and a step of forming a protective film.

The timepiece dial manufacturing method of the present invention comprises the steps of placing a glass plate on a substrate made of Kovar, performing heat treatment to fuse the substrate and the glass plate together to form a glass layer, and a metal. And forming a lower electrode in the opening of the mask, a semiconductor layer, and an upper electrode provided on the semiconductor layer and connected to the lower electrode.

The method for producing a timepiece dial of the present invention comprises the steps of placing a glass plate on a substrate made of Kovar, performing heat treatment to fuse the substrate and the glass plate together to form a glass layer, and a metal. And forming a lower electrode, a diffusion prevention layer, a semiconductor layer, and an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer in the opening of the mask.

The method for producing a timepiece dial of the present invention comprises the steps of placing a glass plate on a substrate made of Kovar, performing heat treatment to fuse the substrate and the glass plate together to form a glass layer, and a metal. The method is characterized by including a step of forming a lower electrode, a semiconductor layer, an upper electrode provided on the semiconductor layer and connected to the lower electrode in the opening of the mask, and a step of forming a protective film.

The method for producing a timepiece dial of the present invention comprises the steps of placing a glass plate on a substrate made of Kovar, performing heat treatment to fuse the substrate and the glass plate together to form a glass layer, and a metal. And a step of forming a lower electrode, a diffusion prevention layer, a semiconductor layer, and an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer in the opening of the mask, and a step of forming a protective film. To do.

The method for producing a timepiece dial of the present invention comprises the steps of disposing a glass plate on a substrate and applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, Forming a lower electrode, forming a semiconductor layer, and forming an upper electrode provided on the semiconductor layer and connected to the lower electrode.

The method of manufacturing a timepiece dial of the present invention comprises the steps of disposing a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, Forming a lower electrode and a diffusion prevention layer, forming a semiconductor layer, and forming an upper electrode provided on the upper surface of the semiconductor layer and connected to the diffusion prevention layer.

The method of manufacturing a timepiece dial of the present invention comprises the steps of disposing a glass plate on a substrate and applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, The method is characterized by including a step of forming a lower electrode, a semiconductor layer, an upper electrode provided on the semiconductor layer and connected to the lower electrode, and a step of forming a protective film.

[0021]

In the dial plate of the present invention, the glass layer is provided on the substrate made of a metal material, and the lower electrode, the semiconductor layer and the upper electrode are sequentially provided on the glass layer.

And as a method of forming this glass layer,
After forming the coated glass, a method of performing a baking treatment to form a glass layer, a method of fusing a substrate and a glass substrate to form a glass layer, and a method of forming a glass layer on a substrate using an anodic bonding method Is adopted in the present invention.

Since the substrate is made of a metal material in this way, the timepiece dial of the present invention is subject to impacts during processing as a dial, an assembly process for incorporating the dial into the timepiece, and the timepiece. Does not cause chipping or cracking when played.

Furthermore, since the metal material is used as the substrate, the processing temperature for forming the semiconductor layer can be made higher than in the prior art, the film quality of the semiconductor layer is improved, and the efficiency of the solar cell is increased. The timepiece dial of the present invention also has the effect of being able to do so.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The construction of a timepiece dial in an embodiment of the present invention and a manufacturing method for forming this construction will be described below with reference to the drawings.

First, the construction of the timepiece dial in the embodiment of the present invention will be described with reference to FIGS. 1, 2 and 3. 1 is a sectional view showing a timepiece dial in an embodiment of the present invention, FIG. 2 is a plan view showing a timepiece dial in an embodiment of the present invention, and FIG. 3 is a timepiece showing the dial of the present invention. It is sectional drawing which shows the state incorporated in. Hereinafter, the configuration of the timepiece dial will be described by alternately using FIGS. 1, 2, and 3.

As shown in FIG. 3, a pointer 3 is provided in an outer casing 37 provided with a windshield 33 made of transparent glass or sapphire.
A movement 39 for driving 5 is provided.

Although not shown in FIG. 3, an electric double layer capacitor for storing the electromotive force of the solar cell, a crystal oscillator as a time reference source, and a semiconductor integrated device for driving a pulse motor are included in the movement 39. A circuit, a train wheel mechanism that drives the pointer 35, and the like are provided.

The dial 2 is used as the time display means of the clock.
5 is arranged on the lower surface side of the windshield 33, and has a solar cell on the light receiving surface side of the dial 25.

The detailed construction of the dial plate 25 in the embodiment of the present invention will be described with reference to FIGS. 1 and 2. Dial 25
Is provided with two dial feet (not shown) for fixing the dial 25 to the movement 39 on its lower surface.

The dial feet for fixing the dial 25 to the movement 39 may be omitted.

When the dial feet are not formed, as shown in FIG. 2, two protrusions 31 are provided on the outer peripheral portion of the dial 25, and a notch corresponding to the protrusions 31 is further provided on the movement 39 to move the movement. Dial 25 for 39
Position.

Alternatively, instead of the protrusion 31, the dial 2
5 may be provided with a notch, and a protrusion corresponding to this notch may be provided on the movement 39 to position the dial plate 25 with respect to the movement 39.

Further, the dial 2 for the movement 39
As a fixing means of 5, the movement 39, the dial 2
5 may be provided with a groove, the dial 25 may be arranged in this groove, and the dial 25 may be fixed to the movement 39.

Further, the dial plate 25 may be formed by separately providing a substrate for forming the dial feet and a substrate for forming the solar cell, and joining the two substrates.

Next, the structure of the substrate on which the solar cell is provided will be described in detail with reference to FIGS. 1 and 2. A glass layer 13 made of a glass material is provided on a substrate 11 made of a metal material.

Then, the lower electrode 15 made of a metal film is provided on the upper surface of the glass layer 13. Furthermore, this lower electrode 1
A diffusion prevention layer 17 is provided on the upper surface of 5.

Further, a semiconductor layer 19 made of a non-single crystal silicon film is provided on the upper surface of the diffusion prevention layer 17.

Further, an upper electrode 21 made of a transparent conductive film is provided on the upper surface of the semiconductor layer 19 so as to be connected to the diffusion prevention layer 17.

More preferably, a protective film 23 made of acrylic resin or epoxy resin is provided on the entire surface. If the reliability can be secured without the protective film 23, the protective film 23 can be omitted.

Here, the diffusion prevention layer 17 has a function of preventing mutual diffusion of the lower electrode 15 and the semiconductor layer 19. When a refractory metal or an alloy film of refractory metal and silicon is used as the lower electrode 15, there is almost no mutual diffusion, and thus the formation of the diffusion prevention layer 17 can be omitted.

Further, although the semiconductor layer 19 is illustrated as being patterned in FIG. 1, the semiconductor layer 19 may not be patterned.

When the semiconductor layer 19 is formed on the entire surface without being individually patterned, the space distance between the lower electrodes 15 to be patterned is increased, or the conductivity type of the lowermost layer of the semiconductor layer 19 is n type or p type. If the sheet resistance value of the semiconductor layer 19 is set to 10 ⁸ to 10 ¹⁰ Ω, it becomes possible to suppress the leak current between the adjacent solar cells to be low.

Further, the dial plate 25, as shown in FIG.
A center hole 27 is provided to project the hour wheel that drives the hour hand, the cylindrical pinion that drives the minute hand, and the second hand shaft that drives the second hand.

Further, the dial plate 25 is provided with a display window 29 for allowing the dial plate 25 to show a date plate for displaying the date and a day plate for displaying the day of the week.

In the timepiece dial of the present invention, two solar cells are connected in series in FIG. 1, but in reality,
Connect 4 solar cells in series, from 2.1V to 2.3V
Is getting electromotive force.

In the dial plate of the present invention, a glass layer 13 is provided on a substrate 11 made of a metal material, and the glass layer 1
A lower electrode 15, a semiconductor layer 19 and an upper electrode 21 are sequentially provided on the surface 3.

Since the substrate 11 is made of the metal material as described above, the timepiece dial of the present invention is being processed as the dial 25, during the process of assembling the dial 25 into the timepiece, or the timepiece. No chipping or cracking when impact is applied to the.

Next, a manufacturing method for forming the structure of the timepiece dial in the embodiment of the present invention shown in FIGS. 1 and 2 will be described with reference to FIGS. 1 and 2.

First, a substrate 11 made of Kovar which is an alloy of iron, nickel and cobalt as a metal material.
By press working, the outer shape of the dial plate 25, the center hole 27, and the display window 29 as necessary are formed.

Kovar used as the substrate 11 is
The coefficient of linear expansion is substantially equal to that of the glass layer 13 formed on the substrate 11. Therefore, the glass layer 13 may change due to temperature changes.
Can be prevented from being damaged.

Then, two dial feet (not shown) are formed on the back surface of the substrate 11 by means of spot welding or adhesion.

With this dial foot, the movement 39 and the dial 25 are mutually positioned, and the dial 25 is fixed to the movement 39 by screwing from the side surface of the dial foot.

As described above, this dial foot does not have to be formed on the dial 25, and the dial plate 25 is formed by joining the dial foot substrate and the solar cell substrate.
It may be.

Then, a liquid coating glass film (SOG) is formed on the entire surface opposite to the surface on which the dial feet are formed by a spin coating method.

Then, a baking treatment is performed at a temperature of 300 ° C. to 400 ° C. to evaporate the solvent contained in the coated glass film to form the glass layer 13.

The glass layer 13 is formed to have a film thickness of 1 μm to 2 μm, and the film thickness can be controlled by adjusting the number of revolutions in the spin coating method or the viscosity of the solvent contained in the coated glass film.

The coated glass film can be formed by a printing method, a dipping method in which a substrate is immersed in a coated glass liquid, or a method using a roll, in addition to the spin coating method. .

Next, the lower electrode 15 is formed by using a sputtering device. This lower electrode 15 is made of silicon 1
Aluminum containing about wt% is used. This lower electrode 1
5 is selectively formed on the glass layer 13, and its film thickness is 1 μm.
m.

When selectively forming the lower electrode 15,
Use a metal mask. This metal mask is made of a thin metal material, and an opening is provided in a region where the lower electrode 15 is formed. Then, the metal mask having the opening is formed on the substrate 11 and placed in the sputtering apparatus to form the lower electrode 15 in the opening.

Then, using the same sputtering apparatus, a diffusion preventing layer 17 made of chromium (Cr) is formed on the upper surface of the lower electrode 15 to have a film thickness of 100 nm. The diffusion prevention layer 17 has a role of preventing mutual diffusion between the lower electrode 13 and the semiconductor layer 19.

As described above, this diffusion prevention layer 15 uses the lower electrode 15 and the semiconductor layer 1 when the high melting point metal or the alloy film of the high melting point metal and silicon is used as the lower electrode 15.
Since the mutual diffusion with 9 can be suppressed, the formation of the diffusion prevention layer 17 can be omitted.

Next, on the upper surface of the diffusion prevention layer 17, a semiconductor layer 19 made of a thin non-single crystal silicon film and acting as a solar cell is selectively formed using a metal mask.

The semiconductor layer 19 is composed of an amorphous silicon film as a non-single crystal silicon film, and has a conductivity type of nip structure from the diffusion prevention layer 17 side.

The semiconductor layer 19 is formed by using a plasma chemical vapor deposition apparatus. Silane gas (SiH ₄ ) is used as a reaction gas, amorphous silicon having an n-type conductivity is formed by adding diborane gas (B ₂ H ₆ ) as an impurity, and amorphous silicon having a p-type conductivity is used as an impurity. It is formed by adding fin gas (PH ₃ ). Note that i-type amorphous silicon may be formed without adding impurities.

The film thicknesses of the p layer and the n layer are 5 respectively.
The thickness of the i layer is 50 to 300 nm.

The semiconductor layer 19 made of amorphous silicon having the pin structure is continuously formed in the plasma chemical vapor deposition apparatus.

As described above, the space between the lower electrodes 15 to be patterned is increased, or the sheet resistance value of the n-type semiconductor layer, which is the lowermost semiconductor layer 19, is 10 or less.
^{When the} resistance is ⁸ to 10 ¹⁰ Ω, the leak current between the adjacent semiconductor layers 19 can be suppressed to a low level, and the semiconductor layer 19 can be formed on the entire surface.

Next, indium tin oxide (ITO) is selectively formed as a transparent electrode film on the upper surface of the semiconductor layer 19 by using a sputtering device to form the upper electrode 21.

The upper electrode 21 is selectively formed so as to connect to the upper surface of the semiconductor layer 19 and the diffusion prevention layer 17.
Then, the upper electrode 21 is formed with a film thickness of 100 nm.

When the upper electrode 21 is selectively formed,
A metal mask is used as in the method of forming the lower electrode 15 and the semiconductor layer 19. The metal mask is made of a thin metal material, and an opening is provided in a region where the transparent electrode film is formed. Then, a metal mask having an opening is overlaid on the semiconductor layer 19 and placed in a sputtering device to form indium tin oxide in the opening.

Thereafter, an acrylic resin or an epoxy resin having a transmittance of about 99% is formed on the entire surface by a spin coating method,
A baking process is performed at a temperature of 200 ° C. to form the protective film 23.

The protective film 23 is formed with a film thickness of 2 μm.
And the inside of the exterior 37 is airtight and there is no intrusion of water,
If the humidity change is small, the formation of the protective film 23 can be omitted as described above.

After that, time scales, characters, and marks are formed on the surface of the protective film 23 every 5 minutes or 1 minute by a printing method.

In this way, it is possible to form a timepiece dial having a solar cell.

Further, in the method of forming the timepiece dial of the present invention, the substrate 11 is made of a metal material.

Therefore, the temperature for forming the semiconductor layer 19 can be made higher than in the prior art, the film quality of the semiconductor layer 19 can be improved, and the efficiency of the solar cell can be increased. The timepiece dial of the present invention is provided.

Next, a method for manufacturing a timepiece dial according to another embodiment of the present invention will be described. In the following description of the manufacturing method, the method of forming the glass layer 13 is different from the above description, and the method of forming the lower electrode 13, the diffusion preventing layer 17, the semiconductor layer 19, the upper electrode 21, and the protective film 23 is the same. Only the method of forming the glass layer 13 will be described.

As a method of forming the glass layer 13 on the substrate 11, there are a glass fusion method and an anodic bonding method.

The glass fusing method is used for the substrate 1 made of Kovar.
Borosilicate glass is placed on top of the temperature of 700 ° C to 8 ° C.
Heat treatment is performed at 00 ° C. to fuse the borosilicate glass to the substrate 11 to form the glass layer 13.

In the anodic bonding method, glass is placed on the substrate 11, a positive potential is applied to the substrate 11, a negative potential is applied to the glass, and a direct current voltage of 1000 V is applied.
The glass layer 13 is formed by bonding the substrate 11 and glass.

As the substrate 11 used in the anodic bonding method, a metal material such as Kovar, stainless steel or aluminum, or a silicon substrate can be applied.

As the glass used for the anodic bonding method, borosilicate glass, quartz glass, Pyrex glass or the like can be applied.

In the above description, the outer shape of the dial 25 and the center hole 27 are formed by pressing the substrate 11, and then the glass layer 13, the lower electrode 15 and the semiconductor layer 19 are formed.
The example in which the upper electrode 21 and the upper electrode 21 are formed has been described.

However, the glass layer 13, the lower electrode 15, the semiconductor layer 19 and the upper electrode 21 may be sequentially formed on a large substrate, and then cut and processed to form a timepiece dial.

At this time, the substrate may be cut by forming the outer shape of the dial plate 25 and the central hole 27 by using a laser beam.

In the above description, as the semiconductor layer 19 provided on the diffusion prevention layer 17 or the lower electrode 15, the conductivity type is formed in the order of n-type-i-type-p type from the lower side. It may be formed in the order of p-type-i-type-n-type.

Further, in the above description, the patterning method using the metal mask is used as the patterning method for the lower electrode 15, the semiconductor layer 19 and the upper electrode 21, but the patterning method using the photoresist described below is also applicable. It can be patterned.

That is, a photoresist is formed on the entire surface of the film to be patterned by spin coating.
After that, an exposure process and a development process are performed using a predetermined photomask to form a photoresist having a predetermined pattern shape.

Then, using the patterned photoresist as an etching mask, the film is patterned by wet etching or dry etching.

As the photoresist, a negative type photoresist or a positive type photoresist is used.

Further, in the above description, an example in which a resin film is formed as the protective film 23 has been described, but a coated glass film (SOG) can also be applied as the protective film 23.

The coating glass film is formed by a spin coating method, a dipping method, or a method using a roll, followed by heat treatment to evaporate the solvent in the coating glass film to form a protective film 23. To do.

[0094]

As is apparent from the above description, in the timepiece dial of the present invention, the glass layer is provided on the substrate made of a metal material, and the lower electrode, the semiconductor layer and the upper electrode are provided on the glass layer. Is provided.

And as a method of forming this glass layer,
After forming the coated glass, a method of performing a baking treatment to form a glass layer, a method of fusing a substrate and a glass substrate to form a glass layer, and a method of forming a glass layer on a substrate using an anodic bonding method Is adopted in the present invention.

Since the substrate is made of a metal material in this way, the timepiece dial of the present invention is subject to shocks during processing as a dial, during the assembly process for incorporating the dial into the timepiece, and during the timepiece. Does not cause chipping or cracking when played.

Further, since the metal material is used as the substrate, the temperature for forming the semiconductor layer can be made higher than that of the prior art, the film quality of the semiconductor layer is improved, and the efficiency of the solar cell is increased. The timepiece dial of the present invention also has the effect of being able to do so.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a structure of a timepiece dial and a manufacturing method thereof according to an embodiment of the present invention.

FIG. 2 is a plan view showing a structure of a timepiece dial and a manufacturing method thereof according to an embodiment of the present invention.

FIG. 3 is a sectional view showing a timepiece to which the timepiece dial according to the embodiment of the invention is applied.

[Explanation of symbols]

 11 substrate 13 glass layer 15 lower electrode 19 semiconductor layer 21 upper electrode

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location G04G 1/00 310 A 9109-2F

Claims (36)

[Claims] 1. A glass layer provided on a substrate, a lower electrode provided on the glass layer, a semiconductor layer provided on the lower electrode, and an upper electrode provided on the semiconductor layer so as to be connected to the lower electrode. A timepiece dial having a central hole. 2. A glass layer provided on a substrate, a lower electrode and a diffusion prevention layer provided on the glass layer, a semiconductor layer provided on the diffusion prevention layer, and a semiconductor layer provided on the semiconductor layer and connected to the diffusion prevention layer. A timepiece dial having an upper electrode provided at the center and a central hole. 3. A glass layer provided on a substrate, a lower electrode provided on the glass layer, a semiconductor layer provided on the lower electrode, and an upper electrode provided on the semiconductor layer so as to be connected to the lower electrode. A timepiece dial having a protective film and a central hole. 4. A glass layer provided on a substrate, a lower electrode and a diffusion prevention layer provided on the glass layer, a semiconductor layer provided on the diffusion prevention layer, and a semiconductor layer provided on the semiconductor layer and connected to the diffusion prevention layer. A timepiece dial having an upper electrode provided on the base, a protective film, and a central hole. 5. A glass layer provided on a substrate made of Kovar, a lower electrode provided on the glass layer, a semiconductor layer provided on the lower electrode, and an upper portion provided on the semiconductor layer and connected to the lower electrode. A timepiece dial having an electrode and a central hole. 6. A glass layer provided on a substrate made of Kovar, a lower electrode and a diffusion prevention layer provided on the glass layer,
A timepiece dial having a semiconductor layer provided on the diffusion prevention layer, an upper electrode provided on the semiconductor layer so as to be connected to the diffusion prevention layer, and a center hole. 7. A glass layer provided on a substrate made of Kovar, a lower electrode provided on the glass layer, a semiconductor layer provided on the lower electrode, and an upper portion provided on the semiconductor layer so as to be connected to the lower electrode. A timepiece dial having an electrode, a protective film, and a central hole. 8. A glass layer provided on a substrate made of Kovar, a lower electrode and a diffusion prevention layer provided on the glass layer,
A timepiece dial having a semiconductor layer provided on the diffusion prevention layer, an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer, a protective film, and a central hole. 9. A step of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, and forming a lower electrode, forming a semiconductor layer, and providing the semiconductor layer on the semiconductor layer and connecting to the lower electrode. And a step of forming an upper electrode. 10. A step of forming a coated glass film on a substrate, performing a baking treatment to form a glass layer, forming a lower electrode and a diffusion preventing layer, forming a semiconductor layer, and providing the semiconductor layer on the semiconductor layer. And a step of forming an upper electrode connected to the diffusion preventing layer. 11. A step of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, and forming a lower electrode, forming a semiconductor layer, and providing the semiconductor layer on the semiconductor layer and connecting to the lower electrode. A method of manufacturing a timepiece dial, comprising a step of forming an upper electrode and a step of forming a protective film. 12. A step of forming a coated glass film on a substrate, performing a baking treatment to form a glass layer, forming a lower electrode and a diffusion prevention layer, forming a semiconductor layer, and providing the semiconductor layer on the semiconductor layer. A method of manufacturing a timepiece dial, comprising: a step of forming an upper electrode connected to the diffusion prevention layer; and a step of forming a protective film. 13. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, and forming a lower electrode, forming a semiconductor layer, and providing the lower electrode on the semiconductor layer. And a step of forming an upper electrode connected to the dial. 14. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, forming a lower electrode and a diffusion prevention layer, forming a semiconductor layer, and forming a semiconductor layer on the semiconductor layer. And a step of forming an upper electrode connected to the diffusion prevention layer, the manufacturing method of the timepiece dial. 15. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, a lower electrode is formed, a semiconductor layer is formed, and a lower electrode is provided on the semiconductor layer. A method of manufacturing a timepiece dial, comprising: a step of forming an upper electrode connected to the. And a step of forming a protective film. 16. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, a lower electrode and a diffusion preventing layer, a semiconductor layer is formed, and a semiconductor layer is formed on the semiconductor layer. And a step of forming an upper electrode connected to the diffusion prevention layer and forming a protective film. 17. A step of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, a lower electrode and a semiconductor layer in an opening of a metal mask, and a semiconductor layer provided on the semiconductor layer and connected to the lower electrode. And a step of forming an upper electrode for forming the timepiece dial. 18. A step of forming a coated glass film on a substrate, performing a baking treatment to form a glass layer, and providing a lower electrode, a diffusion prevention layer, a semiconductor layer, and a semiconductor layer on the semiconductor layer in the opening of the metal mask. A step of forming an upper electrode connected to the diffusion prevention layer, and a method of manufacturing a timepiece dial. 19. A step of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, a lower electrode and a semiconductor layer in an opening of a metal mask, and provided on the semiconductor layer and connected to the lower electrode. Forming an upper electrode to
And a step of forming a protective film. 20. A step of forming a coated glass film on a substrate and performing a baking treatment to form a glass layer, and providing a lower electrode, a diffusion prevention layer, a semiconductor layer and an upper surface of this semiconductor layer in an opening of a metal mask. Moreover, a method of manufacturing a timepiece dial, which includes a step of forming an upper electrode connected to the diffusion prevention layer and a step of forming a protective film. 21. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, a lower electrode and a semiconductor layer in the opening of the metal mask, and a lower layer provided on the semiconductor layer. And a step of forming an upper electrode connected to the electrode. 22. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, and a lower electrode, a diffusion prevention layer, a semiconductor layer and the semiconductor layer on the semiconductor layer in the opening of the metal mask. And a step of forming an upper electrode connected to the diffusion preventing layer, the method for manufacturing a timepiece dial. 23. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, and providing a lower electrode, a semiconductor layer and an upper surface of the semiconductor layer in an opening of a metal mask. A method of manufacturing a timepiece dial, comprising: a step of forming an upper electrode connected to a lower electrode; and a step of forming a protective film. 24. A step of forming a coated glass film on a substrate made of Kovar and performing a baking treatment to form a glass layer, and a lower electrode, a diffusion prevention layer, a semiconductor layer and the semiconductor layer on the semiconductor layer in the opening of the metal mask. And a step of forming an upper electrode connected to the diffusion prevention layer and forming a protective film, the method of manufacturing a timepiece dial. 25. A step of disposing a glass plate on a substrate made of Kovar, performing heat treatment to fuse the substrate and the glass plate together to form a glass layer, and a lower electrode and a semiconductor layer in the opening of the metal mask. And a step of forming an upper electrode provided on the semiconductor layer and connected to the lower electrode, the method for producing a timepiece dial. 26. A step of disposing a glass plate on a substrate made of Kovar and performing a heat treatment to fuse the substrate and the glass plate to form a glass layer; and a lower electrode and a diffusion layer in the opening of the metal mask. And a semiconductor layer and a step of forming an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer. 27. A step of disposing a glass plate on a substrate made of Kovar and performing a heat treatment to fuse the substrate and the glass plate to form a glass layer, and a lower electrode and a semiconductor in the opening of the metal mask. A method of manufacturing a timepiece dial, comprising: forming a layer and an upper electrode provided on the semiconductor layer and connected to the lower electrode; and forming a protective film. 28. A step of disposing a glass plate on a substrate made of Kovar and performing heat treatment to fuse the substrate and the glass plate to form a glass layer, and a step of forming a lower electrode and diffusion in an opening of a metal mask. A method of manufacturing a timepiece dial, comprising: a step of forming a protection layer, a semiconductor layer, an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer, and a step of forming a protective film. 29. A step of disposing a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and forming a lower electrode to form a semiconductor layer. And a step of forming an upper electrode provided on the semiconductor layer and connected to the lower electrode, the method for manufacturing a timepiece dial. 30. A step of disposing a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and forming a lower electrode and a diffusion preventing layer. Forming a semiconductor layer, and forming an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer, the method for producing a timepiece dial. 31. A step of arranging a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and forming a lower electrode to form a semiconductor layer. Then, the method for manufacturing a timepiece dial is characterized by including a step of forming an upper electrode provided on the semiconductor layer and connected to the lower electrode, and a step of forming a protective film. 32. A step of disposing a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and forming a lower electrode and a diffusion preventing layer. A method of manufacturing a timepiece dial, comprising: forming a semiconductor layer, forming an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer; and forming a protective film. 33. A step of disposing a glass plate on a substrate, applying a direct current voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and a lower electrode and a semiconductor in the opening of the metal mask. And a step of forming an upper electrode that is provided on the upper surface of the semiconductor layer and is connected to the lower electrode, the method for manufacturing a timepiece dial. 34. A step of disposing a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and forming a glass layer in the opening of the metal mask and diffusing the lower electrode. And a semiconductor layer and a step of forming an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer. 35. A step of disposing a glass plate on a substrate, applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer, and a lower electrode and a semiconductor in the opening of the metal mask. A method of manufacturing a timepiece dial, comprising: forming a layer and an upper electrode provided on the semiconductor layer and connected to the lower electrode; and forming a protective film. 36. A step of disposing a glass plate on a substrate and applying a DC voltage to bond the substrate and the glass plate by anodic bonding to form a glass layer; and a step of diffusing a lower electrode into an opening of a metal mask. A method of manufacturing a timepiece dial, comprising: a step of forming a protection layer, a semiconductor layer, an upper electrode provided on the semiconductor layer and connected to the diffusion prevention layer, and a step of forming a protective film.