JPH08162574A - Circuit device provided with semiconductor element - Google Patents
Circuit device provided with semiconductor elementInfo
- Publication number
- JPH08162574A JPH08162574A JP6329885A JP32988594A JPH08162574A JP H08162574 A JPH08162574 A JP H08162574A JP 6329885 A JP6329885 A JP 6329885A JP 32988594 A JP32988594 A JP 32988594A JP H08162574 A JPH08162574 A JP H08162574A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor element
- resin coating
- protective resin
- protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、回路基板上に半導体素
子が固着された構造の半導体回路装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor circuit device having a structure in which semiconductor elements are fixed on a circuit board.
【０００２】[0002]
【従来の技術】図１に示すように、回路基板１上に半導
体素子（フリップチップ）２が固着された構成の半導体
回路装置は公知である。半導体素子２は下面に複数のバ
ンプ電極（突起状電極）３が形成されており、このバン
プ電極３が回路基板１上の配線導体４に半田で固着され
ている。半導体素子２は保護樹脂被覆体５で被覆されて
おり、更にこの保護樹脂被覆体５を介して半導体回路装
置の外囲体を構成する樹脂封止体（モールド樹脂）６に
よって被覆されている。なお、この保護樹脂被覆体５は
主としてバンプ電極３に加わる応力を低減させる作用
と、外囲体外部からの異物の侵入を防止する作用をす
る。2. Description of the Related Art A semiconductor circuit device having a structure in which a semiconductor element (flip chip) 2 is fixed on a circuit board 1 as shown in FIG. 1 is known. A plurality of bump electrodes (protruding electrodes) 3 are formed on the lower surface of the semiconductor element 2, and the bump electrodes 3 are fixed to the wiring conductors 4 on the circuit board 1 by soldering. The semiconductor element 2 is covered with a protective resin coating 5, and is further covered with a resin encapsulant (mold resin) 6 forming an outer casing of the semiconductor circuit device through the protective resin coating 5. The protective resin coating 5 mainly has a function of reducing the stress applied to the bump electrode 3 and a function of preventing foreign matter from entering from the outside of the outer enclosure.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上記の半導
体回路装置では、保護樹脂被膜体５によって少しは応力
低減が図れるものの樹脂封止体６の熱収縮等に伴う応力
が保護樹脂被覆体５を介して半導体素子２に加わり、バ
ンプ電極３に破断が生ずることがあった。By the way, in the above semiconductor circuit device, although the stress can be reduced a little by the protective resin coating body 5, the stress due to the heat shrinkage of the resin sealing body 6 causes the protective resin coating body 5 to be damaged. There is a case where the bump electrode 3 is broken by being added to the semiconductor element 2 through the bump electrode 3.
【０００４】そこで、本発明は半導体素子への応力の伝
達が抑制された回路装置を提供することを目的とする。Therefore, an object of the present invention is to provide a circuit device in which transmission of stress to a semiconductor element is suppressed.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明は、回路基板上に半導体素子が突起状電極を介
して固着され、前記半導体素子が保護樹脂被覆体で被覆
され、前記保護樹脂被覆体を覆うように樹脂封止体が形
成された回路装置において、前記保護樹脂被覆体の内側
に空洞が設けられていることを特徴とする回路装置に係
わるものである。According to the present invention for achieving the above object, a semiconductor element is fixed on a circuit board via a projecting electrode, and the semiconductor element is covered with a protective resin coating to protect the semiconductor element. The present invention relates to a circuit device in which a resin sealing body is formed so as to cover the resin coating body, wherein a cavity is provided inside the protective resin coating body.
【０００６】[0006]
【発明の作用及び効果】本発明によれば、保護樹脂被覆
体の内側に空洞即ち空間があるので、樹脂封止体の収縮
等に基づいて応力が保護樹脂被覆体に加わった時に保護
樹脂被覆体の変形が生じ、応力を吸収する。この結果、
半導体素子の突起状電極に加わる応力が抑制され、半導
体素子を保護することができる。なお、保護樹脂被覆体
に空洞を設けることによって保護樹脂被覆体として弾性
の大きな材料を使用することが不要になり、異物侵入防
止効果の大きい材料を使用することが可能になる。ま
た、空洞は保護樹脂被覆体の内側に設けるので、保護樹
脂被覆体の異物侵入阻止機能の低下は少ない。According to the present invention, since there is a cavity or space inside the protective resin coating, the protective resin coating is applied when stress is applied to the protective resin coating due to shrinkage of the resin sealing body. The body deforms and absorbs stress. As a result,
The stress applied to the protruding electrodes of the semiconductor element is suppressed, and the semiconductor element can be protected. By providing a cavity in the protective resin coating, it is not necessary to use a material having large elasticity as the protective resin coating, and it is possible to use a material having a large foreign substance invasion preventing effect. Further, since the cavity is provided inside the protective resin coating, the foreign matter intrusion prevention function of the protective resin coating is not significantly deteriorated.
【０００７】[0007]
【実施例】次に、図２を参照して本発明の一実施例に係
わる半導体回路装置（混成集積回路装置）について説明
する。図２に示すように、本実施例の半導体回路装置
は、セラミックから成る絶縁性回路基板１１、半導体素
子１２、第１の保護樹脂被覆体１３、第２の保護樹脂被
覆体１４及び樹脂封止体１５を備えている。実際の半導
体回路装置は、回路基板１１上に更に、コンデンサチッ
プ、抵抗等を備えているがここでは省略されている。こ
の半導体回路装置は、電力用トランジスタ等と共にリー
ドフレームの金属支持板上に配置され、電力用トランジ
スタ等に共に樹脂封止体１５で被覆される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor circuit device (hybrid integrated circuit device) according to an embodiment of the present invention will be described with reference to FIG. As shown in FIG. 2, the semiconductor circuit device according to the present embodiment includes an insulating circuit board 11 made of ceramic, a semiconductor element 12, a first protective resin coating 13, a second protective resin coating 14, and resin sealing. It has a body 15. The actual semiconductor circuit device further includes a capacitor chip, a resistor and the like on the circuit board 11, but they are omitted here. This semiconductor circuit device is arranged on a metal supporting plate of a lead frame together with a power transistor and the like, and the power transistor and the like are covered with a resin sealing body 15.
【０００８】半導体素子１２は図示のように、その下面
に複数のバンプ電極（突起状電極）１６が形成されたフ
リップチップ型素子であり、バンプ電極が回路基板１１
上の厚膜導体から成る配線導体１７にろう材（図示せ
ず）で固着されている。なお、バンプ電極１６は周知の
ように複数の金属層と半田ボールとから構成されてい
る。As shown in the figure, the semiconductor element 12 is a flip-chip type element having a plurality of bump electrodes (protruding electrodes) 16 formed on the lower surface thereof, and the bump electrodes are circuit boards 11.
It is fixed to the wiring conductor 17 formed of the thick film conductor by a brazing material (not shown). The bump electrode 16 is composed of a plurality of metal layers and solder balls as is well known.
【０００９】第１の保護樹脂被覆体１３は、回路基板１
１の上面全体にわたってほぼ均一の厚さで薄く形成され
ている。また、第１の保護樹脂被覆体１３は半導体素子
１２の側面と上面にも形成されているが、側面の方が上
面よりも厚く形成される。回路基板１１と半導体素子１
２の上面に形成された第１の保護樹脂被覆体１３は、肉
薄であるために後述の第２の保護樹脂被覆体１４の形成
の際に第２の保護樹脂被覆体１４中に取り込まれてしま
うことがある。The first protective resin coating 13 is the circuit board 1
The entire upper surface of No. 1 is formed to be thin with a substantially uniform thickness. Further, the first protective resin coating 13 is also formed on the side surface and the upper surface of the semiconductor element 12, but the side surface is formed thicker than the upper surface. Circuit board 11 and semiconductor element 1
Since the first protective resin coating 13 formed on the upper surface of 2 is thin, it is taken into the second protective resin coating 14 when forming the second protective resin coating 14 described later. It may end up.
【００１０】第２の保護樹脂被覆体１４は半導体素子１
２を被覆するように第１の保護樹脂被覆体１３よりも肉
厚に形成されている。第２の保護樹脂被覆体１４は図示
のように、半導体素子１２の側方において第１の保護樹
脂被覆体１３に密着しておらず、空洞部１８が生じてい
る。空洞部１８が形成される理由については後述する。
なお、半導体素子１２の下方には、第２の保護樹脂被覆
体１４が形成されないことがある。The second protective resin coating 14 is the semiconductor element 1.
It is formed thicker than the first protective resin coating 13 so as to cover 2. As shown, the second protective resin coating 14 is not in close contact with the first protective resin coating 13 on the side of the semiconductor element 12, and a cavity 18 is formed. The reason why the cavity 18 is formed will be described later.
The second protective resin coating 14 may not be formed below the semiconductor element 12.
【００１１】外部からの異物侵入防止のための外囲体と
しての樹脂封止体１５は熱硬化性エポキシ樹脂から成り
金型を使用した射出成形法で形成されたものであり、半
導体素子１２への応力緩和するための第１の保護樹脂被
覆体１３及び第２の保護樹脂被覆体１４を被覆してい
る。なお、樹脂封止体１５の樹脂は射出成形が可能な材
料つまり、加熱によって粘度低下を起し、金型内に射出
注入できる材料が望ましく、エポキシ樹脂の他にフェノ
−ル樹脂等でもよい。The resin encapsulant 15 as an enclosure for preventing foreign matter from entering from the outside is made of a thermosetting epoxy resin and is formed by an injection molding method using a mold, and is formed on the semiconductor element 12. A first protective resin coating 13 and a second protective resin coating 14 for stress relaxation are coated. The resin of the resin encapsulant 15 is preferably a material which can be injection-molded, that is, a material whose viscosity is lowered by heating and which can be injected and injected into the mold. A phenol resin or the like may be used instead of the epoxy resin.
【００１２】次に、第１及び第２の保護樹脂被覆体１
３、１４を形成するための樹脂材と上記空洞部１８が形
成できる理由について説明する。第１及び第２の保護樹
脂被覆体１３、１４を形成するための樹脂は、いずれ
も、ポリアミド系溶剤乾燥型樹脂である。ポリアミド系
溶剤乾燥型樹脂とは、主鎖中にアミド結合をもつ樹脂に
揮発性溶剤を含むものであり、熱処理等によってこの揮
発性溶剤が揮発することによって樹脂が硬化する樹脂を
いう。Next, the first and second protective resin coatings 1
The reason why the resin material for forming 3 and 14 and the cavity 18 can be formed will be described. All of the resins for forming the first and second protective resin coatings 13 and 14 are polyamide solvent-drying resins. The polyamide solvent-drying resin is a resin containing a volatile solvent in a resin having an amide bond in the main chain, and is a resin in which the resin is cured by volatilization of the volatile solvent by heat treatment or the like.
【００１３】第１の保護樹脂被覆体１３の形成に使用さ
れる樹脂材は、揮発性溶剤の含有率が９３重量％のポリ
アミド系溶剤乾燥型樹脂である。揮発性溶剤の含有率を
このように設定したのは、第１の保護樹脂被覆体１３を
基板１１の全面に薄く均一に塗布できるようにするため
と第２の保護樹脂被覆体１４の形成時に第１の保護樹脂
被覆体１３が第２の保護樹脂被覆体１４に取り込まれる
ことを防止するためである。即ち、揮発性溶剤の含有率
が９０重量％を下回ると樹脂材の流動性が損なわれ、第
１の保護樹脂被覆体１３を薄く均一に形成することが困
難になる。また、揮発性溶剤の含有率が９５重量％を上
回ると樹脂材中の樹脂分が少なすぎて、第２の保護樹脂
被覆体１４の形成時にこれに取り込まれてしまうことが
ある。従って、本実施例では揮発性溶剤含有率が９０〜
９５重量％から選ばれた９３重量％とされている。な
お、第１の保護樹脂被覆体１３を形成するための樹脂
は、溶剤を含み且つ均一な薄膜が形成できる材料であれ
ば良い。したがって、溶剤入りのポリアミド樹脂以外に
溶剤入りのボリイミド、ポリイミドシリコ−ン、シリコ
−ンラバ−等の樹脂でもよい。The resin material used for forming the first protective resin coating 13 is a polyamide solvent-drying resin having a volatile solvent content of 93% by weight. The content rate of the volatile solvent is set in this way so that the first protective resin coating 13 can be applied thinly and uniformly on the entire surface of the substrate 11 and when the second protective resin coating 14 is formed. This is to prevent the first protective resin coating 13 from being taken into the second protective resin coating 14. That is, if the content of the volatile solvent is less than 90% by weight, the fluidity of the resin material is impaired, and it becomes difficult to form the first protective resin coating 13 thinly and uniformly. When the content of the volatile solvent exceeds 95% by weight, the resin content in the resin material is too small and may be incorporated into the second protective resin coating 14 when it is formed. Therefore, in this embodiment, the volatile solvent content is 90 to
It is set to 93% by weight selected from 95% by weight. The resin for forming the first protective resin coating 13 may be any material containing a solvent and capable of forming a uniform thin film. Therefore, in addition to the solvent-containing polyamide resin, a resin-containing resin such as polyimide, polyimide silicone, or silicone rubber may be used.
【００１４】第２の保護樹脂被覆体１４の形成に使用さ
れる樹脂材は、第１の保護樹脂被覆体１３の形成に使用
される樹脂材と同じポリアミド系溶剤乾燥型樹脂から成
るが、粒状フィラーを含有している点等において異な
る。粒状フィラー（例えば、シリカ粒、アルミナ粒等）
を含有する理由は、チキソ性（粘性）を向上して第２の
保護樹脂被覆体１４を半導体素子１２を覆うように選択
的に形成するためである。フィラーが含有されていない
と、第２の保護樹脂被覆体１４は第１の保護樹脂被覆体
１３の上面に大きく広がってしまい、半導体素子１２の
全面を被覆することができない。また、ポリアミド樹脂
とフィラーとの比率は、１６：８４となっており、フィ
ラーの粒径は平均して約３０μｍとなっている。ポリア
ミド樹脂に対するフィラーの含有割合が大きすぎると、
フィラー間のすき間を樹脂で埋めることができなくな
る。このため、空洞部１８を良好に形成できなくなる。
即ち、後述するように、樹脂材は硬化するときに揮発性
溶剤が揮発してこの揮発分だけ体積減少するが、これが
フィラー剤のすき間から減少し硬化後は主としてフィラ
ー材で構成される軽石状態となるためである。また、ポ
リアミド樹脂に対するフィラーの含有割合が小さすぎる
と、チキソ性が高くなり、樹脂の広がり性が低下し、半
導体素子１２を良好に被覆することが困難となる。従っ
て、本実施例での第２の保護樹脂被覆体１４のためのポ
リアミド樹脂とフィラーとの比は、好ましい範囲の１
４：８６〜２０：８０から選択された１６：８４とされ
ている。なお、チキソ性は、不揮発である樹脂分とフィ
ラー材とを減らすことによって低くすることができる
が、あまり不揮発分が少ないと即ち揮発性溶剤の含有割
合が大きいと、樹脂硬化時に、第２の保護樹脂被覆体１
４の表面皮膜を十分な厚みで形成することができず、硬
化時の体積減少によって第２の保護樹脂被覆体１４が縮
んでしまい空洞部１８を良好に形成できなくなる。ま
た、揮発性溶剤の含有率が大きいと、粘性が低下して、
半導体素子１２を第２の保護樹脂被覆体１４によって良
好に被覆することができない。また、逆に揮発性溶剤の
含有率が小さいとチキソ性（粘性）が高くなり過ぎて、
第２の保護樹脂被覆体１４の広がり性が低下し、やはり
半導体素子１２を良好に被覆することができない。従っ
て、第２の保護樹脂被覆体１４を形成する材料の揮発性
溶剤の含有率は２５重量％〜３５重量％とするのが望ま
しく、本実施例では３０重量％とされている。The resin material used to form the second protective resin coating 14 is made of the same polyamide solvent-drying resin as the resin material used to form the first protective resin coating 13, but is granular. They differ in that they contain a filler. Granular filler (eg silica grains, alumina grains, etc.)
The reason for containing is that the thixotropy (viscosity) is improved and the second protective resin coating 14 is selectively formed so as to cover the semiconductor element 12. If the filler is not contained, the second protective resin coating 14 spreads greatly on the upper surface of the first protective resin coating 13, and the entire surface of the semiconductor element 12 cannot be coated. The ratio of the polyamide resin to the filler is 16:84, and the average particle size of the filler is about 30 μm. If the content ratio of the filler to the polyamide resin is too large,
The gap between the fillers cannot be filled with the resin. Therefore, the cavity 18 cannot be formed well.
That is, as will be described later, when the resin material is cured, the volatile solvent volatilizes to reduce the volume by this volatile content, but this decreases from the gap of the filler agent, and after curing, it is a pumice state mainly composed of the filler material. This is because If the content ratio of the filler to the polyamide resin is too small, the thixotropy becomes high, the spreadability of the resin decreases, and it becomes difficult to satisfactorily coat the semiconductor element 12. Therefore, the ratio of the polyamide resin to the filler for the second protective resin coating 14 in this example is within the preferable range of 1
It is 16:84 selected from 4:86 to 20:80. The thixotropy can be lowered by reducing the non-volatile resin content and the filler material. However, if the non-volatile content is too low, that is, the content ratio of the volatile solvent is high, the thixotropy property is reduced to the second value during resin curing. Protective resin coating 1
The surface coating of No. 4 cannot be formed with a sufficient thickness, and the volume of the second protective resin coating 14 shrinks due to the decrease in volume during curing, so that the cavity 18 cannot be formed well. Also, if the content of the volatile solvent is large, the viscosity decreases,
The semiconductor element 12 cannot be satisfactorily covered with the second protective resin coating 14. On the contrary, if the content of the volatile solvent is small, the thixotropic property (viscosity) becomes too high,
The spreadability of the second protective resin coating 14 is reduced, and the semiconductor element 12 cannot be coated well. Therefore, the content of the volatile solvent in the material forming the second protective resin coating 14 is preferably 25% by weight to 35% by weight, and is 30% by weight in this embodiment.
【００１５】第２の保護樹脂被覆体１４のフィラー径が
あまり大きいとフィラー間のすき間が大きくなり、フィ
ラー間を樹脂で埋めることができず上述と同様の理由で
空洞部１８を良好に形成できない。またフィラー径があ
まり小さいと硬化後の樹脂に小さな孔が多数散在してや
はり空洞部１８が良好に形成できなくなる。このため、
フィラー材の径は１０μｍ〜１００μｍとするのが望ま
しく、本実施例ではこの範囲中の３０μｍが選択されて
いる。なお、第２の保護樹脂被覆体１４を形成するため
の樹脂は、溶剤とフィラ−を含むものであれば、ポリア
ミド以外の樹脂でも良い。例えば、溶剤及びフィラ−入
りのポリイミド、ポリイミドシリコ−ン、シリコ−ンラ
バ−等の樹脂でも良い。この第２の保護樹脂被覆体１４
を形成するための樹脂は、上述のように樹脂内部に空洞
を形成するために、まずその樹脂表面が加熱によって乾
燥硬化しこの部分に硬い被膜を作れるものである必要が
ある。したがって、加熱によって粘度が低下しない樹脂
であることが条件である。このため、後述の樹脂封止体
の形成に用いられるエポキシ樹脂、フェノ−ル樹脂等は
加熱によってレジン分が粘度低下するので不適である。If the filler diameter of the second protective resin coating 14 is too large, the gap between the fillers becomes large and the space between the fillers cannot be filled with the resin, and the cavity 18 cannot be formed well for the same reason as described above. . If the diameter of the filler is too small, a large number of small holes are scattered in the cured resin, so that the cavity 18 cannot be formed well. For this reason,
It is desirable that the diameter of the filler material is 10 μm to 100 μm, and 30 μm in this range is selected in this embodiment. The resin for forming the second protective resin coating 14 may be a resin other than polyamide as long as it contains a solvent and a filler. For example, a resin such as a solvent-filled polyimide, a polyimide silicone, and a silicone rubber may be used. This second protective resin coating 14
In order to form a cavity inside the resin as described above, the resin for forming the resin must first be dried and cured by heating the resin surface to form a hard coating on this portion. Therefore, the condition is that the viscosity of the resin is not lowered by heating. For this reason, the epoxy resin, phenol resin, etc. used for forming the resin sealing body described later are not suitable because the viscosity of the resin component is lowered by heating.
【００１６】なお、第１の保護樹脂被覆体１３と第２の
保護樹脂被覆体１４を形成するときは、まず、回路基板
１１の全面と半導体素子１２に対して第１の保護樹脂被
覆体１３を形成するための第１の樹脂（揮発性溶剤の含
有率が９３重量％とされたポリアミド系溶剤乾燥型樹
脂）を被覆する。次に、これに熱処理を施して揮発性溶
剤を乾燥させて硬化させて第１の保護樹脂被覆体１３を
形成する。続いて、第１の保護樹脂被覆体１３の上面に
第２の保護樹脂被覆体１４を形成するための第２の樹脂
（揮発性溶剤の含有率が３０重量％、樹脂とフィラーの
含有比率が１６：８４、フィラー径が平均３０μｍとさ
れたポリアミド系溶剤乾燥型樹脂）を塗布して半導体素
子１２を被覆する。これを室温放置した後、４０〜５０
℃の緩やかな熱処理により乾燥を施すと、第２の樹脂が
硬化して空洞部１８を有する第２の保護樹脂被覆体１４
が形成される。空洞部１８は半導体素子１２の側方にほ
ぼ環状に形成される。また、半導体素子１２の上面にも
形成されることがある。本実施例では、側方にのみ形成
された例を示す。When forming the first protective resin coating 13 and the second protective resin coating 14, first of all, the first protective resin coating 13 is applied to the entire surface of the circuit board 11 and the semiconductor element 12. Is coated with a first resin (polyamide solvent-drying resin having a volatile solvent content of 93% by weight). Next, this is heat-treated to dry and cure the volatile solvent to form the first protective resin coating 13. Then, the second resin for forming the second protective resin coating 14 on the upper surface of the first protective resin coating 13 (the content ratio of the volatile solvent is 30% by weight, the content ratio of the resin and the filler is 16:84, a polyamide-based solvent drying type resin having a filler diameter of 30 μm on average is applied to cover the semiconductor element 12. After leaving this at room temperature, 40-50
The second protective resin coating 14 having the hollow portion 18 is obtained by curing the second resin when it is dried by a gentle heat treatment at ℃.
Is formed. The cavity 18 is formed on the side of the semiconductor element 12 in a substantially annular shape. It may also be formed on the upper surface of the semiconductor element 12. In the present embodiment, an example in which it is formed only on the side is shown.
【００１７】空洞部１８は、第２の樹脂を緩やかに乾燥
することによって、第２の樹脂はその表面側がまず乾燥
して皮膜を作り、その後に徐々に乾燥が樹脂の内部側に
進み、このとき、前述のように樹脂が体積収縮して形成
されるものと考えられる。In the hollow portion 18, by gently drying the second resin, the surface side of the second resin is first dried to form a film, and thereafter the drying gradually advances to the inner side of the resin. At this time, it is considered that the resin is formed by volume contraction as described above.
【００１８】本実施例は次の効果を有する。 （１） 半導体素子１２の側面に空洞部１８が形成され
るため、半導体素子１２に側面からの応力が加わらず、
バンプ電極１６にせん断応力が発生することを防止で
き、バンプ電極１６の寿命が延びる。また実施例では半
導体素子１２の下方に第２の保護樹脂被覆体１４が形成
されているので、素子１２の厚み方向の応力にも強くな
っている。これにより、バンプ電極１６の寿命の向上が
図れる。 （２） 第１の保護樹脂被覆体１３と第２の保護樹脂被
覆体１４の樹脂成分が同じポリアミド系樹脂であるた
め、両者の密着性が比較的良好に得られる。即ち、第１
の保護樹脂被覆体１３の肉薄部分は、第２の保護樹脂被
覆体１４の形成時にこれに取り込まれ、両者が強固に密
着する。このため、第２の保護樹脂被覆体１４は半導体
素子１２の周囲への異物侵入防止効果を十分に発揮す
る。一方、第１の保護樹脂被覆体１３の肉厚部分は、完
全に取り込まれないため密着性が若干低下し、第２の樹
脂の体積収縮によって空洞部１８を形成することができ
る。This embodiment has the following effects. (1) Since the cavity 18 is formed on the side surface of the semiconductor element 12, stress from the side surface is not applied to the semiconductor element 12,
Shear stress can be prevented from being generated in the bump electrode 16, and the life of the bump electrode 16 is extended. Further, in the embodiment, since the second protective resin coating 14 is formed below the semiconductor element 12, the stress in the thickness direction of the element 12 is also strong. As a result, the life of the bump electrode 16 can be improved. (2) Since the resin components of the first protective resin coating 13 and the second protective resin coating 14 are the same polyamide-based resin, the adhesion between the two is relatively good. That is, the first
The thin portion of the protective resin coating 13 is taken into this when the second protective resin coating 14 is formed, and both are firmly adhered. Therefore, the second protective resin coating 14 sufficiently exhibits the effect of preventing foreign matter from entering the periphery of the semiconductor element 12. On the other hand, since the thick portion of the first protective resin coating 13 is not completely taken in, the adhesion is slightly reduced, and the cavity 18 can be formed by the volume contraction of the second resin.
【００１９】[0019]
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） 第１の保護樹脂被覆体１３を省くことができ
る。但し、第１の保護樹脂被覆体１３がないと空洞部１
８が形成し難いことが確認されている。したがって、少
なくとも、第２の保護樹脂被覆体１４を形成する工程の
ときには、第１の保護樹脂被覆体１３が存在するように
しておくことが良い。 （２） 第２の保護樹脂被覆体１４を設ける時に、半導
体素子１２の近傍に昇華剤を配置し、これを含めて被覆
し、加熱によって昇華剤を昇華させて空洞部１８を得る
ことができる。 （３） 空洞部１８の幅（厚み）を好ましくは１μｍ〜
２ｍｍの範囲で変えることができる。 （４） 実施例では、第２の保護樹脂被覆体１４が半導
体素子１２の下方にも設けられているが、この第２の保
護樹脂被覆体１４を半導体素子１２の下方に設けなくて
もよい。即ち半導体素子１２の下方も空洞部としてもよ
い。また、半導体素子１２の下に第１の保護樹脂被覆体
１３を設けることができる。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) The first protective resin coating 13 can be omitted. However, if the first protective resin coating 13 is not provided, the hollow portion 1
8 has been confirmed to be difficult to form. Therefore, it is preferable that the first protective resin coating 13 is present at least during the step of forming the second protective resin coating 14. (2) When the second protective resin coating 14 is provided, a sublimation agent is disposed in the vicinity of the semiconductor element 12, and the sublimation agent is covered with the sublimation agent, and the sublimation agent is sublimated by heating to obtain the cavity 18. . (3) The width (thickness) of the cavity 18 is preferably 1 μm to
It can be changed in the range of 2 mm. (4) In the embodiment, the second protective resin coating 14 is also provided below the semiconductor element 12, but the second protective resin coating 14 may not be provided below the semiconductor element 12. . That is, the lower portion of the semiconductor element 12 may also be a cavity. Further, the first protective resin coating 13 can be provided below the semiconductor element 12.
【図１】従来の半導体回路装置の一部を示す断面図であ
る。FIG. 1 is a cross-sectional view showing a part of a conventional semiconductor circuit device.
【図２】本発明の実施例の半導体回路装置の一部を示す
断面図である。FIG. 2 is a sectional view showing a part of a semiconductor circuit device according to an embodiment of the present invention.
１２ 半導体素子 １４ 保護樹脂被覆体 １５ 樹脂封止体 １８ 空洞部 12 Semiconductor Element 14 Protective Resin Cover 15 Resin Seal 18 Cavity
Claims (1)
介して固着され、前記半導体素子が保護樹脂被覆体で被
覆され、前記保護樹脂被覆体を覆うように樹脂封止体が
形成された回路装置において、 前記保護樹脂被覆体の内側に空洞が設けられていること
を特徴とする回路装置。1. A semiconductor element is fixed on a circuit board via a protruding electrode, the semiconductor element is covered with a protective resin coating, and a resin sealing body is formed so as to cover the protective resin coating. A circuit device, wherein a cavity is provided inside the protective resin coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06329885A JP3099864B2 (en) | 1994-12-05 | 1994-12-05 | Circuit device having semiconductor element and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06329885A JP3099864B2 (en) | 1994-12-05 | 1994-12-05 | Circuit device having semiconductor element and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08162574A true JPH08162574A (en) | 1996-06-21 |
| JP3099864B2 JP3099864B2 (en) | 2000-10-16 |
Family
ID=18226345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06329885A Expired - Fee Related JP3099864B2 (en) | 1994-12-05 | 1994-12-05 | Circuit device having semiconductor element and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3099864B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6710586B2 (en) | 2001-11-22 | 2004-03-23 | Denso Corporation | Band gap reference voltage circuit for outputting constant output voltage |
| JP2010067807A (en) * | 2008-09-11 | 2010-03-25 | Denso Corp | Method of mounting electronic component |
| JP2016535937A (en) * | 2013-11-07 | 2016-11-17 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Substrate for LED with total internal reflection layer surrounding the LED |
| US9780442B2 (en) | 2014-06-30 | 2017-10-03 | International Business Machines Corporation | Wireless communication device with joined semiconductors |
-
1994
- 1994-12-05 JP JP06329885A patent/JP3099864B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6710586B2 (en) | 2001-11-22 | 2004-03-23 | Denso Corporation | Band gap reference voltage circuit for outputting constant output voltage |
| JP2010067807A (en) * | 2008-09-11 | 2010-03-25 | Denso Corp | Method of mounting electronic component |
| JP2016535937A (en) * | 2013-11-07 | 2016-11-17 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Substrate for LED with total internal reflection layer surrounding the LED |
| JP2020061574A (en) * | 2013-11-07 | 2020-04-16 | ルミレッズ ホールディング ベーフェー | Substrate for led with total inner reflection layer surrounding led |
| US9780442B2 (en) | 2014-06-30 | 2017-10-03 | International Business Machines Corporation | Wireless communication device with joined semiconductors |
| US10090586B2 (en) | 2014-06-30 | 2018-10-02 | International Business Machines Corporation | Wireless communication device with joined semiconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3099864B2 (en) | 2000-10-16 |
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