JPH0815727A - Production of electrode substrate for liquid crystal display device - Google Patents

Production of electrode substrate for liquid crystal display device

Info

Publication number
JPH0815727A
JPH0815727A JP14824294A JP14824294A JPH0815727A JP H0815727 A JPH0815727 A JP H0815727A JP 14824294 A JP14824294 A JP 14824294A JP 14824294 A JP14824294 A JP 14824294A JP H0815727 A JPH0815727 A JP H0815727A
Authority
JP
Japan
Prior art keywords
tft
electrode substrate
liquid crystal
display device
color filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14824294A
Other languages
Japanese (ja)
Inventor
Hironobu Suda
廣伸 須田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP14824294A priority Critical patent/JPH0815727A/en
Publication of JPH0815727A publication Critical patent/JPH0815727A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the production yield for the method to form a color filter on a electrode substrate where a TFT is to be formed. CONSTITUTION:A color filter is formed on a supporting sheet to obtain a transfer sheet. Then color filters with pattern defects on the transfer sheet are rejected and only a good transfer sheet is transferred to an electrode substrate where a TFT is to be formed. Then an ITO film is formed and patterned into a specified pattern. An insulating film 11 is formed on the whole surface and a light-shielding film 12 is formed in a specified shape. Therefore, since the color filter is wholly transferred at one time from the preliminarily produced transfer sheet, the production yield of the TFT substrate is improved. Further, since the surface of the oriented film is finally made almost flat, the rubbing treatment of the oriented film is surely performed even when a more precise pattern is formed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、アクティブマトリクス
型液晶表示装置における電極基板の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electrode substrate in an active matrix type liquid crystal display device.

【0002】[0002]

【従来の技術】アクティブマトリクス型液晶表示装置の
従来からの典型的な構造として、TFTの電極と配線部
分を隠蔽する遮光膜およびカラーフィルターを、TFT
形成側電極基板と対向する電極基板に形成する構造が広
く採用されている。しかしながら、互いに対向する両電
極基板の貼り合わせずれが発生するため、その貼り合わ
せ精度に相当する分だけ遮光膜の幅を大きく設計する必
要があり、したがってカラーフィルターの面積が小さく
なり、開口率が低下するという問題があった。この問題
を解決するため、例えば特開平4-253028号公報にあるよ
うに、TFT形成側電極基板にカラーフィルターを形成
することで開口率を向上する方法が提案されている。
2. Description of the Related Art As a typical conventional structure of an active matrix type liquid crystal display device, a light-shielding film and a color filter for concealing the electrodes and wiring of the TFT are provided in the TFT.
A structure formed on an electrode substrate facing the formation-side electrode substrate is widely adopted. However, since the bonding displacement between the two electrode substrates facing each other occurs, it is necessary to design the width of the light-shielding film to be large corresponding to the bonding accuracy, and therefore the area of the color filter becomes small and the aperture ratio becomes small. There was a problem of lowering. In order to solve this problem, for example, as disclosed in Japanese Patent Laid-Open No. 4-253028, a method of improving the aperture ratio by forming a color filter on the electrode substrate on the TFT formation side has been proposed.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、前記の
如くTFT形成側電極基板にカラーフィルターを形成す
る方法では、赤(R)、緑(G)、青(B)の3色を3
回に分けてパターニングするため、工程数が多くなって
歩留まりが悪くなりやすく、せっかく形成したTFT基
板が生かされないなど、効率が極めて良くない。本発明
は、上記の問題を改善することを目的とする。
However, in the method of forming the color filter on the electrode substrate on the TFT formation side as described above, three colors of red (R), green (G) and blue (B) are used.
Since the patterning is performed in separate steps, the number of steps increases, the yield is likely to deteriorate, and the efficiency is not very good, for example, the TFT substrate formed with difficulty is not utilized. The present invention aims to remedy the above problems.

【0004】[0004]

【課題を解決するための手段】そこで本発明では、液晶
表示装置用電極板を製造するに際して、赤(R)、緑
(G)、青(B)の3色のカラーフィルターを支持シー
ト1上に形成して転写シートを作成した上で、転写シー
ト上のパターン不良のカラーフィルターを除いた良品の
みをTFT形成側電極基板に転写する。図1〜図10に
沿って順に説明する。
Therefore, in the present invention, when manufacturing an electrode plate for a liquid crystal display device, three color filters of red (R), green (G) and blue (B) are provided on the support sheet 1. Then, after forming a transfer sheet, the non-defective color filter on the transfer sheet is transferred to the TFT formation side electrode substrate. It demonstrates in order along FIG. 1-FIG.

【0005】まず、図1のような支持シート1上に剥離
層2を介してRGBのカラーフィルター着色層3を形成
した転写シートを作成しておく。一方、図2のようにガ
ラス基板8上に、画素電極となるITO膜10を除くT
FT回路を形成する。図中、開口部7は将来カラーフィ
ルターが形成されるところである。このTFT形成用電
極基板の上から図3に示すように光硬化型の接着剤層9
を塗布し、図4のように前記転写シートを位置を制御し
ながら重ね合わせ、TFT形成側電極基板のTFT非形
成面側から紫外線を照射して開口部7の接着剤層9′を
硬化させる。このとき、TFT上に乗っている接着剤層
9は、光が照射しないので硬化しない。
First, as shown in FIG. 1, a transfer sheet in which an RGB color filter coloring layer 3 is formed on a support sheet 1 via a release layer 2 is prepared. On the other hand, as shown in FIG. 2, T except the ITO film 10 which becomes the pixel electrode is formed on the glass substrate 8.
Form an FT circuit. In the figure, the opening 7 is where a color filter will be formed in the future. As shown in FIG. 3, a photocurable adhesive layer 9 is formed on the TFT-forming electrode substrate.
4, the transfer sheets are overlapped while controlling the position as shown in FIG. 4, and ultraviolet rays are irradiated from the TFT non-forming surface side of the TFT forming side electrode substrate to cure the adhesive layer 9 ′ in the opening 7. . At this time, the adhesive layer 9 on the TFT is not cured because it is not irradiated with light.

【0006】次いで図5に示すように剥離層2と共に支
持シート1を剥離してカラーフィルター着色層3を形成
したのち、図6に示すように薄膜トランジスタおよび配
線部上の未硬化の接着剤層9をアルカリ等で洗浄して洗
い流す。次いで図7のようにITO膜10を全面に形成
し、これをエッチングして図8のように所定の形状にパ
ターニングして画素電極13とする。このとき、画素電
極13とTFTのドレイン電極5との電気的接続が達成
される。次いで図9のように必要に応じて絶縁膜11を
全面に形成し、図10のように少なくとも薄膜トランジ
スタと配線部を覆う遮光膜12を所望の形状に形成し
て、望ましくは表面を平坦化する。
Next, as shown in FIG. 5, the support sheet 1 is peeled off together with the peeling layer 2 to form the color filter coloring layer 3, and then the uncured adhesive layer 9 on the thin film transistor and the wiring portion is formed as shown in FIG. Rinse with water. Next, the ITO film 10 is formed on the entire surface as shown in FIG. 7, and this is etched and patterned into a predetermined shape as shown in FIG. 8 to form the pixel electrode 13. At this time, electrical connection between the pixel electrode 13 and the drain electrode 5 of the TFT is achieved. Then, as shown in FIG. 9, an insulating film 11 is formed on the entire surface as needed, and a light-shielding film 12 covering at least the thin film transistor and the wiring portion is formed in a desired shape as shown in FIG. 10, preferably the surface is flattened. .

【0007】[0007]

【作用】本発明は、赤(R)、緑(G)、青(B)の3
色のカラーフィルターを形成した転写シートを作成し、
この転写シート上のカラーフィルターをTFT形成側電
極基板に転写するので、形状不良のカラーフィルターは
あらかじめ除いた上で良品のみをTFT形成基板に形成
でき、TFT基板の歩留まりを向上することができる。
The present invention has three functions of red (R), green (G) and blue (B).
Create a transfer sheet with color filters,
Since the color filter on the transfer sheet is transferred to the electrode substrate on which the TFT is formed, only defective products can be formed on the TFT forming substrate after removing the color filter having a defective shape in advance, and the yield of the TFT substrate can be improved.

【0008】[0008]

【実施例】以下に、本発明の液晶表示装置用電極基板の
製造方法の一実施例を図面を用いて詳しく説明する。図
1は、本発明に用いられる転写シートの一例を示してい
る。支持シート1上に光硬化ポリビニルアルコールから
なる剥離層2が形成され、この剥離層2の上に3色の着
色層3R、3G、3B(以下、単に着色層3という)が
互いに隣り合うように平面的に配列されてなるカラーフ
ィルター層が形成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method of manufacturing an electrode substrate for a liquid crystal display device of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows an example of a transfer sheet used in the present invention. A release layer 2 made of photo-cured polyvinyl alcohol is formed on the support sheet 1, and three colored layers 3R, 3G, 3B (hereinafter, simply referred to as the colored layer 3) are adjacent to each other on the release layer 2. A color filter layer arranged in a plane is formed.

【0009】支持シート1は、ポリエチレンテレフタレ
ート、ポリイミド、ポリカーボネート等の耐熱性合成樹
脂、またはニッケル鉄系合金等からなるものが使用で
き、その厚さは30μmないし200μmの範囲内であるこ
とが望ましい。この支持シート1には、各着色層3R、
3G、3Bの間や着色層3とTFT形成側電極基板との
間の位置合わせのためのアライメントマークを付与する
ことが望ましく、これは着色層3の形成に先だって、剥
離層2が施されていない支持シート1の部分に、フォト
リソグラフィーまたはレーザー光などによって形成され
る。
The support sheet 1 may be made of a heat-resistant synthetic resin such as polyethylene terephthalate, polyimide or polycarbonate, or a nickel iron alloy, and its thickness is preferably in the range of 30 μm to 200 μm. Each of the colored layers 3R,
It is desirable to provide an alignment mark for alignment between the 3G and 3B or between the colored layer 3 and the electrode substrate on the TFT formation side. The peeling layer 2 is applied prior to the formation of the colored layer 3. It is formed on the part of the support sheet 1 which is not present by photolithography or laser light.

【0010】光硬化ポリビニルアルコールからなる剥離
層2は、支持シート1によく接着し、着色層3との剥離
性が良好である。この剥離層2の厚さは1μmないし15
μm程度、表面の平滑度は0.1μm以下程度とすること
が望ましい。この剥離層2は、ポリビニルアルコール
に、例えば重クロム酸塩、クロム酸塩、またはジアゾ化
合物など光架橋剤を加えた混合物を支持シート1上に平
坦に塗布し、加熱しながら紫外線を照射して硬化させ
る。
The release layer 2 made of photo-cured polyvinyl alcohol adheres well to the support sheet 1 and has good releasability from the colored layer 3. The thickness of the peeling layer 2 is 1 μm to 15 μm.
It is desirable that the surface smoothness is about μm and the surface smoothness is about 0.1 μm or less. The release layer 2 is formed by applying a mixture of polyvinyl alcohol and a photocrosslinking agent such as dichromate, chromate, or diazo compound evenly on the support sheet 1 and irradiating it with ultraviolet rays while heating. Let it harden.

【0011】この硬化した剥離層2の上に着色層3が形
成される。この着色層3の形成方法としては、従来から
知られているフォトリソグラフィー法、印刷法、電着法
など、いずれも採用できる。フォトリソグラフィー法と
しては、顔料分散法と染色法のいずれも採用可能であ
る。なお、着色層3は、逆テーパー状に仕上げるのが、
転写後に順テーパーとなり、画素電極の断線を防止する
ので望ましい。
A colored layer 3 is formed on the cured release layer 2. As a method of forming the colored layer 3, any of the conventionally known photolithography method, printing method, electrodeposition method and the like can be adopted. As the photolithography method, either a pigment dispersion method or a dyeing method can be adopted. In addition, it is preferable to finish the colored layer 3 in an inverse taper shape.
It is desirable since it becomes a forward taper after the transfer and prevents the pixel electrode from breaking.

【0012】以上のようにして作成された転写シートを
用いて、TFT形成側電極基板にカラーフィルターを形
成する方法を以下に述べる。図2のごとくガラス基板8
上にゲート電極6、ソース電極4、ドレイン電極5をそ
れぞれ形成した段階で、図3のごとく前記TFT形成側
電極基板の全面に接着剤層9を塗布形成した。接着剤と
しては、例えば着色層3に用いる顔料分散レジストと同
様の、ただし顔料成分を除いたアクリレート系の紫外線
硬化型樹脂を用いて、バーコーターで厚さ約3μmに塗
布し、10分間風乾して接着剤層9を形成した。
A method for forming a color filter on the TFT formation side electrode substrate using the transfer sheet prepared as described above will be described below. Glass substrate 8 as shown in FIG.
At the stage where the gate electrode 6, the source electrode 4, and the drain electrode 5 were respectively formed thereon, an adhesive layer 9 was applied and formed on the entire surface of the TFT formation side electrode substrate as shown in FIG. As the adhesive, for example, an acrylate-based UV-curable resin similar to the pigment-dispersed resist used for the colored layer 3, except that the pigment component is removed, is applied to a thickness of about 3 μm with a bar coater and air-dried for 10 minutes. To form the adhesive layer 9.

【0013】このTFT形成側電極基板上に、図4のご
とく前記の転写シートを位置合わせを行いながら重ね合
わせ、この状態を保ってロールプレスのホットプレート
上にセットし、100℃で5分間予熱した。次に、温度100
℃、圧力5kg/cm2でロールプレスし、TFT非形成面
側から紫外線を照射して、薄膜トランジスタおよび配線
部を除いた開口部7の接着剤を硬化させて着色層3の転
写を行った。
As shown in FIG. 4, the transfer sheet was superposed on the TFT-forming side electrode substrate while aligning it, and while keeping this state, it was set on a hot plate of a roll press and preheated at 100 ° C. for 5 minutes. did. Then the temperature 100
Rolling was performed at a temperature of 5 ° C. and a pressure of 5 kg / cm 2 , and ultraviolet rays were radiated from the TFT non-forming surface side to cure the adhesive in the opening 7 excluding the thin film transistor and the wiring portion to transfer the colored layer 3.

【0014】次に転写シートを取り除き、図5のごとく
開口部7のみ接着剤層9′が硬化したTFT形成側電極
基板をアルカリ等で洗浄することにより、図6のごとく
薄膜トランジスタおよび配線部上の接着剤層9が流され
TFT表面が現われる。ここで図7のごとくITO膜1
0をスパッタ等により全面に蒸着形成し、これをエッチ
ングして図8に示すように所定の形状にパターニングす
ることによりカラーフィルター(着色層3)上に画素電
極13を作成した。画素電極13は、ドレイン電極5と
電気的接続がなされている。
Next, the transfer sheet is removed, and the electrode substrate on the TFT formation side where the adhesive layer 9'is cured only in the opening 7 as shown in FIG. The adhesive layer 9 is flowed and the TFT surface appears. Here, as shown in FIG. 7, the ITO film 1
0 was vapor-deposited and formed on the entire surface by sputtering or the like, and this was etched and patterned into a predetermined shape as shown in FIG. 8 to form the pixel electrode 13 on the color filter (coloring layer 3). The pixel electrode 13 is electrically connected to the drain electrode 5.

【0015】この後、図9に示すように厚さ0.1μm程
度のSiO2絶縁膜11を蒸着形成し、次いで図10に示す
ように遮光膜12を、適切な厚さで所望の形状に形成し
た。以上の操作により、TFT形成側電極基板表面はほ
ぼ平滑になり、図11のごとく配向膜14も平坦に形成
することができ、正確なラビング処理が可能になった。
Thereafter, as shown in FIG. 9, a SiO 2 insulating film 11 having a thickness of about 0.1 μm is formed by vapor deposition, and then a light shielding film 12 is formed in a desired shape with an appropriate thickness as shown in FIG. did. By the above operation, the surface of the electrode substrate on which the TFT is formed is made substantially smooth, and the alignment film 14 can be formed flat as shown in FIG. 11, which enables accurate rubbing treatment.

【0016】[0016]

【発明の効果】本発明によれば、着色層3の各色を順に
TFT基板に直接形成することなく、予め作成した転写
シートからまとめて転写し形成するため、TFT基板の
歩留まりを向上できる。しかも、画素電極はスルーホー
ル等を形成することなく簡便にTFTのドレイン電極と
接続される。また、最終的に配向膜面がほぼ平坦化され
るので、高精細化が進んでも配向膜のラビング処理が確
実に行われるというメリットがある。なお、全面絶縁膜
は、遮光膜が導電性のとき短絡を防ぐために施すもので
あり、遮光膜が絶縁性のときは省略できる。
According to the present invention, since the respective colors of the colored layer 3 are not directly formed on the TFT substrate in order but are transferred and formed collectively from a transfer sheet prepared in advance, the yield of the TFT substrate can be improved. Moreover, the pixel electrode is simply connected to the drain electrode of the TFT without forming a through hole or the like. Moreover, since the surface of the alignment film is finally almost flattened, there is a merit that the rubbing treatment of the alignment film is surely performed even if the fineness is increased. The entire surface insulating film is provided to prevent a short circuit when the light shielding film is conductive, and can be omitted when the light shielding film is insulating.

【0017】[0017]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に用いられる転写シートの一実施例を示
す説明図である。
FIG. 1 is an explanatory diagram showing an example of a transfer sheet used in the present invention.

【図2】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 2 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図3】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 3 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図4】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 4 is an explanatory view showing one embodiment of a method of manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図5】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 5 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図6】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 6 is an explanatory view showing one embodiment of a method of manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図7】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 7 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図8】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 8 is an explanatory view showing an embodiment of a method of manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図9】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図である。
FIG. 9 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図10】本発明の液晶表示装置用電極基板の製造方法
の一実施例を工程順に示す説明図である。
FIG. 10 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図11】本発明の液晶表示装置用電極基板の製造方法
の一実施例を工程順に示す説明図である。
FIG. 11 is an explanatory view showing an example of a method of manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【符号の説明】[Explanation of symbols]

1 支持シート 2 剥離層 3(3R、3G、3B) 着色層 4 ソース電極 5 ドレイン電極 6 ゲート電極 7 開口部 8 ガラス基板 9、9′ 接着剤層 10 ITO膜 11 絶縁膜 12 遮光膜 13 画素電極 14 配向膜 1 Support Sheet 2 Release Layer 3 (3R, 3G, 3B) Colored Layer 4 Source Electrode 5 Drain Electrode 6 Gate Electrode 7 Opening 8 Glass Substrate 9, 9'Adhesive Layer 10 ITO Film 11 Insulating Film 12 Light-Shielding Film 13 Pixel Electrode 14 Alignment film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】アクティブマトリクス型液晶表示装置の製
造工程において、画素電極以外の薄膜トランジスタ及び
配線部を形成したTFT形成側電極基板に、転写シート
上のカラーフィルターを紫外線硬化型接着剤を用いて貼
り付け、TFT非形成面側から紫外線を照射し開口部上
の接着剤を硬化させ、支持シートを剥がしてカラーフィ
ルターを転写し、薄膜トランジスタ、配線部上の未硬化
の接着剤を除去し、次いで全面にITO膜を形成し、こ
れを所定の形状にパターニングすることによりドレイン
電極と接続する画素電極となし、次いで少なくとも薄膜
トランジスタと配線部を覆う遮光膜を所望の形状に形成
することを特徴とする液晶表示装置用電極基板の製造方
法。
1. In a manufacturing process of an active matrix type liquid crystal display device, a color filter on a transfer sheet is attached to a TFT formation side electrode substrate on which a thin film transistor other than a pixel electrode and a wiring portion are formed by using an ultraviolet curable adhesive. Then, the adhesive on the opening is cured by irradiating ultraviolet rays from the side where the TFT is not formed, the support sheet is peeled off, the color filter is transferred, and the uncured adhesive on the thin film transistor and the wiring part is removed, and then the entire surface. A liquid crystal, characterized in that an ITO film is formed on a substrate and patterned into a predetermined shape to form a pixel electrode connected to a drain electrode, and then a light-shielding film that covers at least the thin film transistor and the wiring portion is formed in a desired shape. Manufacturing method of electrode substrate for display device.
【請求項2】TFTおよびITO膜の上に、絶縁膜を介
して遮光膜を形成する請求項1記載の液晶表示装置用電
極基板の製造方法。
2. The method for manufacturing an electrode substrate for a liquid crystal display device according to claim 1, wherein a light shielding film is formed on the TFT and the ITO film with an insulating film interposed therebetween.
JP14824294A 1994-06-29 1994-06-29 Production of electrode substrate for liquid crystal display device Pending JPH0815727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14824294A JPH0815727A (en) 1994-06-29 1994-06-29 Production of electrode substrate for liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14824294A JPH0815727A (en) 1994-06-29 1994-06-29 Production of electrode substrate for liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH0815727A true JPH0815727A (en) 1996-01-19

Family

ID=15448427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14824294A Pending JPH0815727A (en) 1994-06-29 1994-06-29 Production of electrode substrate for liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH0815727A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2746195A1 (en) * 1996-03-13 1997-09-19 Lg Electronics Inc LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
US5866919A (en) * 1996-04-16 1999-02-02 Lg Electronics, Inc. TFT array having planarized light shielding element
US6417898B1 (en) 1997-05-15 2002-07-09 Sharp Kabushiki Kaisha Liquid crystal display device
KR100625027B1 (en) * 1999-03-19 2006-09-20 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device And Method Thereof
KR100675933B1 (en) * 2000-12-30 2007-02-01 비오이 하이디스 테크놀로지 주식회사 Thin film transistor liquid crystal display using polarizer film and method for fabricating the same
KR100686239B1 (en) * 2001-01-09 2007-02-22 삼성전자주식회사 A substrate for a liquid crystal display and a manufacturing method of the same
KR100719265B1 (en) * 2000-12-28 2007-05-17 엘지.필립스 엘시디 주식회사 Array plate for liquid crystal display device and fabricating method thereof
KR100729766B1 (en) * 2001-01-19 2007-06-20 삼성전자주식회사 Color filter plate and method for fabricating the plate
KR100870698B1 (en) * 2002-12-09 2008-11-27 엘지디스플레이 주식회사 Liquid Crystal Display Device and Method for fabricating the same
CN100442088C (en) * 2004-12-01 2008-12-10 统宝光电股份有限公司 Color filter producing process
JP2010132859A (en) * 2008-12-04 2010-06-17 Samsung Electronics Co Ltd Shading member having variable transparency, and display board including the same, and method for producing the display board
US8035104B2 (en) 2008-12-15 2011-10-11 Samsung Electronics Co., Ltd. Thin film transistor display panel and manufacturing method thereof
US8421982B2 (en) 2009-10-19 2013-04-16 Samsung Display Co., Ltd. Display substrate, method of manufacturing the display substrate and display apparatus having the display substrate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03160454A (en) * 1989-11-20 1991-07-10 Dainippon Ink & Chem Inc Photosensitive transfer sheet
JPH03167524A (en) * 1989-11-27 1991-07-19 Sharp Corp Color liquid crystal display device
JPH04253028A (en) * 1991-01-30 1992-09-08 Sharp Corp Active matrix type liquid crystal display device
JPH05341116A (en) * 1992-06-10 1993-12-24 Tokuyama Soda Co Ltd Manufacture of color filter
JPH07159772A (en) * 1993-12-03 1995-06-23 Canon Inc Liquid crystal display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03160454A (en) * 1989-11-20 1991-07-10 Dainippon Ink & Chem Inc Photosensitive transfer sheet
JPH03167524A (en) * 1989-11-27 1991-07-19 Sharp Corp Color liquid crystal display device
JPH04253028A (en) * 1991-01-30 1992-09-08 Sharp Corp Active matrix type liquid crystal display device
JPH05341116A (en) * 1992-06-10 1993-12-24 Tokuyama Soda Co Ltd Manufacture of color filter
JPH07159772A (en) * 1993-12-03 1995-06-23 Canon Inc Liquid crystal display device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2746195A1 (en) * 1996-03-13 1997-09-19 Lg Electronics Inc LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
US5866919A (en) * 1996-04-16 1999-02-02 Lg Electronics, Inc. TFT array having planarized light shielding element
US5926702A (en) * 1996-04-16 1999-07-20 Lg Electronics, Inc. Method of fabricating TFT array substrate
US6417898B1 (en) 1997-05-15 2002-07-09 Sharp Kabushiki Kaisha Liquid crystal display device
KR100625027B1 (en) * 1999-03-19 2006-09-20 엘지.필립스 엘시디 주식회사 Liquid Crystal Display Device And Method Thereof
KR100719265B1 (en) * 2000-12-28 2007-05-17 엘지.필립스 엘시디 주식회사 Array plate for liquid crystal display device and fabricating method thereof
KR100675933B1 (en) * 2000-12-30 2007-02-01 비오이 하이디스 테크놀로지 주식회사 Thin film transistor liquid crystal display using polarizer film and method for fabricating the same
KR100686239B1 (en) * 2001-01-09 2007-02-22 삼성전자주식회사 A substrate for a liquid crystal display and a manufacturing method of the same
KR100729766B1 (en) * 2001-01-19 2007-06-20 삼성전자주식회사 Color filter plate and method for fabricating the plate
KR100870698B1 (en) * 2002-12-09 2008-11-27 엘지디스플레이 주식회사 Liquid Crystal Display Device and Method for fabricating the same
CN100442088C (en) * 2004-12-01 2008-12-10 统宝光电股份有限公司 Color filter producing process
JP2010132859A (en) * 2008-12-04 2010-06-17 Samsung Electronics Co Ltd Shading member having variable transparency, and display board including the same, and method for producing the display board
US8268412B2 (en) 2008-12-04 2012-09-18 Samsung Electronics Co., Ltd. Light blocking member having variabe transmittance, display panel including the same, and manufacturing method thereof
US8946712B2 (en) 2008-12-04 2015-02-03 Samsung Display Co., Ltd. Light blocking member having variable transmittance, display panel including the same, and manufacturing method thereof
US8035104B2 (en) 2008-12-15 2011-10-11 Samsung Electronics Co., Ltd. Thin film transistor display panel and manufacturing method thereof
US8421982B2 (en) 2009-10-19 2013-04-16 Samsung Display Co., Ltd. Display substrate, method of manufacturing the display substrate and display apparatus having the display substrate

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