JPH08153740A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH08153740A
JPH08153740A JP29523294A JP29523294A JPH08153740A JP H08153740 A JPH08153740 A JP H08153740A JP 29523294 A JP29523294 A JP 29523294A JP 29523294 A JP29523294 A JP 29523294A JP H08153740 A JPH08153740 A JP H08153740A
Authority
JP
Japan
Prior art keywords
resin
wiring board
chip
substrate
auxiliary plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29523294A
Other languages
Japanese (ja)
Inventor
Hideaki Maeda
秀昭 前田
Takahito Nakazawa
孝仁 中沢
Katsuhiko Oyama
勝彦 尾山
Yumiko Ooshima
有美子 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP29523294A priority Critical patent/JPH08153740A/en
Publication of JPH08153740A publication Critical patent/JPH08153740A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector

Landscapes

  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE: To fill resin into a gap between a chip and a board in the case a resin applying space on an edge part of a wiring board is narrow by applying sealing resin to the opening part between the chip and the board using an auxiliary board. CONSTITUTION: In the case of filling sealing resin 5a into the gap between the chip 2 and the board 1, an auxiliary board 11 that helps the application of the resin is used, and after applying the resin 5a on an surface of the auxiliary board 11, the surface of the auxiliary board 11 is held at right angle with a major surface of the wiring board 1, and the surface of the auxiliary board 11 is closely touched with an edge surface of the wiring board 1 so that the part of the surface, on which the resin 5a is applied, is placed on the upside of the major surface of the wiring board 1. The resin 5a on the surface of the auxiliary board 11 is applied to the opening part between the chip 2 and the board 1 by sliding the auxiliary board 11 along the contacting edge with the wiring board 1 downwards or upwards and separating between the auxiliary board 11 and the wiring board 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置およびその
製造方法に係り、特に片面樹脂封止型パッケージ構造を
有する半導体装置およびチップ封止用樹脂層の形成方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device having a single-sided resin-sealed package structure and a method for forming a resin layer for chip sealing.

【0002】[0002]

【従来の技術】例えば集積回路カード、ゲーム用マスク
ROMカード、小型携帯電話器などに使用される半導体
装置は、パッケージの小型化・薄型化に対する要求が特
に強い。このような要求に応じるべく、ベア状態の半導
体チップ(ベア・チップ)の実装技術が発展しており、
チップ・オン・ボード(COB)実装、フリップチップ
実装などが知られている。
2. Description of the Related Art For semiconductor devices used in, for example, integrated circuit cards, mask ROM cards for games, small mobile phones, etc., there is a strong demand for miniaturization and thinning of packages. In order to meet such demands, mounting technology of bare semiconductor chips (bare chips) has been developed,
Chip-on-board (COB) mounting, flip-chip mounting, etc. are known.

【0003】上記フリップチップ実装は、ベア・チップ
の素子形成面の金属バンプ電極を配線基板上の一主面に
形成されている電極パッドに押し付けて接続(フリップ
チップボンディング)するものである。これは、ワイヤ
ーボンディングを必要とするCOB実装よりも実装密度
が優れているが、基板の熱膨脹などに起因する応力が基
板・チップの接続部に加わって接続の信頼性を損なうと
いう問題がある。
In the flip chip mounting, the metal bump electrodes on the element forming surface of the bare chip are pressed against the electrode pads formed on one main surface of the wiring board to connect (flip chip bonding). This has a higher mounting density than the COB mounting which requires wire bonding, but has a problem that stress due to thermal expansion of the substrate is applied to the connecting portion between the substrate and the chip to impair the reliability of the connection.

【0004】上記フリップチップ実装の改良例として、
ベア・チップと基板との間に樹脂を介在させて基板・チ
ップ相互を機械的に固定した片面樹脂封止型パッケージ
構造が例えば特公平2−7180号などにより知られて
いる。
As an improved example of the flip chip mounting,
A single-sided resin-sealed package structure in which a resin is interposed between a bare chip and a substrate to mechanically fix the substrate and the chip together is known, for example, from Japanese Patent Publication No. 2-7180.

【0005】さらに、上記片面樹脂封止型パッケージ構
造の改良例およびその製造方法として、本願出願人の出
願に係る特願平6−32296号、特願平6−5075
7号、特願平6−60493号などにより種々の提案が
なされている。
Further, as an improved example of the single-sided resin-encapsulated package structure and a manufacturing method thereof, Japanese Patent Application Nos. Hei 6-32296 and Hei 6-5075, filed by the applicant of the present application, are disclosed.
Various proposals have been made in Japanese Patent No. 7 and Japanese Patent Application No. 6-60493.

【0006】図6は、上記提案に係る特願平6−507
57号に開示されている片面樹脂封止型パッケージ構造
の一例を示している。このパッケージ構造は、一主面に
被接続部(例えば接続パッド1b)を含む配線1aを有
する配線基板1と、上記基板の一主面にフェースダウン
型に実装された半導体チップ2と、上記チップと配線基
板との間に充填された樹脂層5と、前記基板の他の主面
側に導出・露出され、前記チップに電気的に接続された
外部接続用端子4とを具備する。なお、図6中、2aは
バンプ電極、3はスルーホール配線である。
FIG. 6 shows a Japanese Patent Application No. 6-507 relating to the above proposal.
57 shows an example of a single-sided resin-sealed package structure disclosed in No. 57. This package structure has a wiring board 1 having a wiring 1a including a connected portion (for example, a connection pad 1b) on one main surface, a semiconductor chip 2 mounted face down on the one main surface of the board, and the chip described above. And a wiring layer, and a resin layer 5 filled between the wiring board and the wiring board, and an external connection terminal 4 which is led out and exposed on the other main surface side of the board and electrically connected to the chip. In FIG. 6, 2a is a bump electrode and 3 is a through hole wiring.

【0007】図7は、前記提案に係る特願平6−604
93号に開示されている片面樹脂封止型パッケージ構造
の一例を示している。このパッケージ構造は、図6のパ
ッケージ構造の改良例であり、前記基板1の一主面に対
してほぼ同一平面(平面性が±10μm程度)を成すよ
うに前記配線1aを埋め込み形成している。なお、図7
において、図6中と同一部分には同一符号を付してい
る。
FIG. 7 is a Japanese Patent Application No. 6-604 related to the above proposal.
An example of a single-sided resin-sealed package structure disclosed in No. 93 is shown. This package structure is an improved example of the package structure of FIG. 6, and the wiring 1a is embedded and formed so as to form substantially the same plane (planarity is about ± 10 μm) with respect to one main surface of the substrate 1. . Note that FIG.
6, the same parts as those in FIG. 6 are designated by the same reference numerals.

【0008】このパッケージ構造によれば、チップ・基
板間に対して毛細管現象を利用して樹脂を流し込む際、
チップ・基板間の平坦性がよく、樹脂が容易に流れ込む
ので、ボイドのない緻密な樹脂層を形成でき、チップ・
基板間固定の信頼性を高めることができる。
According to this package structure, when the resin is poured between the chip and the substrate by utilizing the capillary phenomenon,
The flatness between the chip and substrate is good, and the resin easily flows in, so a dense resin layer without voids can be formed.
The reliability of fixation between substrates can be improved.

【0009】なお、図6、図7中の樹脂層5の形成に際
しては、図8に示すように、樹脂供給装置(ディスペン
サ)のノズル(ニードル)71から樹脂5aを基板1上
の一辺部に供給し、いわゆる毛細管現象を利用してチッ
プ・基板間に樹脂を流し込んで充填した後に硬化させ
る。なお、チップ2の露出している上面は、緻密、堅牢
な素材(例えばシリコン)からなり、樹脂封止を行わな
くても信頼性上の問題は少ない。
When forming the resin layer 5 in FIGS. 6 and 7, as shown in FIG. 8, the resin 5a is applied to one side of the substrate 1 from the nozzle (needle) 71 of the resin supply device (dispenser). The resin is supplied and the resin is poured between the chip and the substrate by utilizing the so-called capillary phenomenon to fill the resin and then cured. The exposed upper surface of the chip 2 is made of a dense and robust material (for example, silicon), and there is little problem in reliability without resin sealing.

【0010】また、上記したような提案に係るパッケー
ジ構造を有する半導体装置は、樹脂封止後に温度ストレ
スおよび/または電界ストレスを印加するためのバーン
インテストを実施し得るので、樹脂封止を行わないフリ
ップチップ実装よりも優れている。
In the semiconductor device having the package structure according to the above proposal, since the burn-in test for applying the temperature stress and / or the electric field stress can be performed after the resin sealing, the resin sealing is not performed. Better than flip chip mounting.

【0011】ところで、前記したような樹脂充填方法で
は、図8に示すように、基板上の樹脂供給側とは反対側
の一辺部にはみ出した樹脂(その表面形状をフィレット
と称する。)のはみ出し量(約0.25mm)S1より
も、基板上の樹脂供給側の一辺部における樹脂のはみ出
し量S2の方がはるかに大きい。因みに、樹脂供給側の
一辺部におけるはみ出し量は、チップ・基板間の容積を
基準にして樹脂供給量が2倍の場合に最大0.83m
m、3倍の場合に最大1.15mm、4倍の場合に最大
2.12mmであった。
By the way, in the resin filling method as described above, as shown in FIG. 8, the resin (the surface shape thereof is referred to as a fillet) protruding from one side of the substrate opposite to the resin supply side is protruded. The resin protrusion amount S2 at one side of the substrate on the resin supply side is much larger than the amount (about 0.25 mm) S1. By the way, the protrusion amount on one side of the resin supply side is 0.83m at maximum when the resin supply amount is twice as large as the volume between the chip and the substrate.
m was 3.15 times, the maximum was 1.15 mm, and 4 times was the maximum 2.12 mm.

【0012】また、樹脂供給側とは反対側の一辺部にお
いては、樹脂のはみ出し量S1は樹脂の物性でほぼ決ま
るが、樹脂供給側の一辺部においては、チップに触れな
いようにニードル71を接近させて樹脂を供給するの
で、樹脂のはみ出し量S2はニードルのサイズ(現在使
用している標準型のものは外径0.82mm、1.25
mmなど)より大きくなる。
On the side opposite to the resin supply side, the resin protrusion amount S1 is substantially determined by the physical properties of the resin, but on the side of the resin supply side, the needle 71 is placed so as not to touch the tip. Since the resin is supplied in close proximity, the amount of resin squeeze out S2 is the size of the needle (the standard type currently used is 0.82 mm in outer diameter, 1.25 mm
mm).

【0013】また、前記したような樹脂充填方法では、
チップ外縁・基板外縁間の距離(樹脂の供給スペース)
S3を小さくしようとする場合、ニードル71の外径に
より制約され、ニードルの外径を小さくしようとする
と、樹脂を基板上のチップ側方部に正常に供給すること
が困難になる。つまり、ニードルから吐き出した樹脂が
チップ上面に乗り上げたり基板端面から垂れ下がったり
してパッケージの仕上がり寸法のばらつきや外観上の不
具合が生じるおそれがあるので、現在使用しているニー
ドルをそのまま使用することは不可能になる。
Further, in the resin filling method as described above,
Distance between chip outer edge and substrate outer edge (resin supply space)
When trying to reduce S3, it is restricted by the outer diameter of the needle 71, and when trying to reduce the outer diameter of the needle 71, it becomes difficult to normally supply the resin to the side portion of the chip on the substrate. In other words, the resin discharged from the needle may run onto the top surface of the chip or hang down from the board end surface, resulting in variations in the finished dimensions of the package and appearance problems. It will be impossible.

【0014】この対策として、前記樹脂の供給スペース
よりニードルの外径を小さく実現することが可能な場合
にニードルの外径を小さくすると、現在使用しているニ
ードル内径(0.6〜0.7mm)も小さくする必要が
あるので、粘度の高い樹脂を使用する場合にニードルか
ら吐き出そうとする樹脂の目詰まりが生じ、ニードルか
らの吐き出しが困難になる。また、樹脂の一回の吐き出
し量(供給量)が少なくなり、チップ・基板間を充填す
るのに必要な量の樹脂を確保するためにディスペンサか
らの吐き出し回数を増やす必要が生じ、その制御が困難
になるという問題がある。
As a countermeasure against this, if the outer diameter of the needle can be made smaller than the space for supplying the resin, if the outer diameter of the needle is made smaller, the inner diameter of the needle currently used (0.6 to 0.7 mm). ) Also needs to be small, and when a resin having a high viscosity is used, the resin that is about to be discharged from the needle is clogged, which makes it difficult to discharge from the needle. In addition, the amount of resin discharged at one time (supply amount) is reduced, and it is necessary to increase the number of times the resin is discharged from the dispenser in order to secure the amount of resin required to fill the space between the chip and the substrate. There is a problem that it becomes difficult.

【0015】一方、片面樹脂封止型パッケージ構造の一
層の小型化が要求され、チップとチップサイズに近い基
板とをフリップチップボンディングした後の状態で基板
の各辺部においてチップ外縁・基板外縁間の距離S3を
例えば1mm〜0.5mm以下にすることが要求されて
きているが、前記したような樹脂充填方法では、上記要
求に対応しきれない。
On the other hand, further miniaturization of the single-sided resin-sealed package structure is required, and after flip chip bonding a chip and a substrate having a chip size close to each other, between the chip outer edge and the substrate outer edge on each side of the substrate. The distance S3 has been required to be, for example, 1 mm to 0.5 mm or less, but the above resin filling method cannot meet the above requirement.

【0016】[0016]

【発明が解決しようとする課題】上記したように従来の
提案に係る片面樹脂封止型パッケージ構造を有する半導
体装置を製造する際のチップ・基板間に対する樹脂充填
方法は、チップ外縁・基板外縁間の距離が微小になる
と、パッケージの仕上がり寸法のばらつきや外観上の不
具合が生じるおそれがあるという問題があった。
As described above, the method of filling the resin between the chip and the substrate when manufacturing the semiconductor device having the single-sided resin-sealed package structure according to the conventional proposal is as follows. If the distance is small, there is a problem that variations in the finished dimensions of the package and defects in appearance may occur.

【0017】本発明は上記の問題点を解決すべくなされ
たもので、片面樹脂封止型パッケージ構造を有する半導
体装置を製造するためにチップ・基板間に対して樹脂を
充填する際、チップ外縁・基板外縁間の距離が微小の場
合でも、従来と同様のディスペンサと使用樹脂の性質に
見合った口径を有するニードルを使用でき、パッケージ
の仕上がり寸法のばらつきや外観上の不具合の発生をニ
ードルの口径に関係なく抑止でき、片面樹脂封止型パッ
ケージ構造の一層の小型化を図り得る半導体装置の製造
方法を提供することを目的とする。
The present invention has been made to solve the above problems, and when a resin is filled between a chip and a substrate to manufacture a semiconductor device having a single-sided resin-sealed package structure, the outer edge of the chip is sealed.・ Even when the distance between the outer edges of the substrate is small, the same dispenser and needle with a diameter that matches the properties of the resin used can be used, resulting in variations in the finished dimensions of the package and defects in the appearance It is an object of the present invention to provide a method for manufacturing a semiconductor device which can be suppressed regardless of the above, and can further reduce the size of the single-sided resin-sealed package structure.

【0018】[0018]

【課題を解決するための手段】本発明の半導体装置の製
造方法は、一主面に被接続部を含む配線を有し、他主面
に外部接続用端子を導出・露出させた配線基板の被接続
部とこれに対応する半導体チップの電極端子部の位置が
対向するように半導体チップを配置する工程と、上記配
線基板の被接続部とこれに対応する半導体チップの電極
端子部を固定接続する工程と、この後、上記半導体チッ
プと配線基板との間に封止用樹脂を充填する工程と、上
記充填した封止用樹脂を硬化させる工程とを具備し、前
記封止用樹脂を充填する際、樹脂供給補助用の補助板を
使用し、その片面に封止用樹脂を供給する工程と、この
後、上記補助板の片面が前記配線基板の一主面にほぼ垂
直になり、かつ、上記補助板の片面のうちの前記封止用
樹脂が供給された部分が前記配線基板の一主面より上側
になるように、上記補助板の片面を上記配線基板の少な
くとも一端面に対して密着状態で当接させる工程と、こ
の後、前記補助板を前記配線基板との当接端面に沿って
下方に滑らせるあるいは前記配線基板を前記補助板との
当接端面に沿って上方に滑らせることにより上記補助板
と前記配線基板とを引き離すことによって、上記補助板
の片面上の前記封止用樹脂を前記配線基板上に移し、こ
の樹脂を前記チップ・基板間の開口部に供給する工程と
を具備することを特徴とする。
A method of manufacturing a semiconductor device according to the present invention is directed to a wiring board in which a wiring including a connected portion is provided on one main surface and external connection terminals are led out / exposed on the other main surface. The step of arranging the semiconductor chip so that the position of the connected part and the corresponding electrode terminal part of the semiconductor chip face each other, and the connected part of the wiring board and the electrode terminal part of the corresponding semiconductor chip are fixedly connected. And a step of subsequently filling a sealing resin between the semiconductor chip and the wiring board, and a step of curing the filled sealing resin, and filling the sealing resin At the time of using an auxiliary plate for resin supply, and supplying the sealing resin to one surface of the auxiliary plate, one surface of the auxiliary plate becomes substantially vertical to one main surface of the wiring board, and , The sealing resin on one side of the auxiliary plate was supplied The one side of the auxiliary plate in close contact with at least one end face of the wiring board so that the component is above one main surface of the wiring board, and thereafter, the auxiliary plate is connected to the wiring board. The auxiliary board is separated from the wiring board by sliding the auxiliary board downward along the contact end surface with the board or by sliding the wiring board upward along the contact end surface with the auxiliary plate. And a step of transferring the sealing resin on one surface of the plate onto the wiring board and supplying the resin to the opening between the chip and the board.

【0019】[0019]

【作用】片面樹脂封止型パッケージ構造を有する半導体
装置を製造する際にチップ・基板間に対して樹脂を充填
する時、樹脂供給補助用の補助板を使用し、その片面に
封止用樹脂を供給した後、補助板の片面が配線基板の一
主面にほぼ垂直になり、かつ、補助板の片面のうちの封
止用樹脂が供給された部分が配線基板の一主面より上側
になるように、補助板の片面を配線基板の少なくとも一
端面に対して密着させて当接させる。この後、補助板を
配線基板との当接端面に沿って下方に滑らせるあるいは
配線基板を補助板との当接端面に沿って上方に滑らせる
ことにより補助板と配線基板とを引き離すことによっ
て、補助板の片面上の封止用樹脂をチップ・基板間の開
口部に供給する。
[Operation] When a semiconductor device having a single-sided resin-encapsulated package structure is filled with resin between the chip and the substrate, an auxiliary plate for assisting resin supply is used, and one side of the encapsulating resin is used. , The one side of the auxiliary plate becomes substantially perpendicular to the one main surface of the wiring board, and the part of the one side of the auxiliary board to which the sealing resin is supplied is above the one main surface of the wiring board. In such a manner, one side of the auxiliary plate is brought into close contact with at least one end face of the wiring board. After that, by sliding the auxiliary plate downward along the contact end surface with the wiring board or by sliding the wiring board upward along the contact end surface with the auxiliary plate, the auxiliary plate and the wiring board are separated from each other. , The sealing resin on one side of the auxiliary plate is supplied to the opening between the chip and the substrate.

【0020】これにより、チップ外縁・基板外縁間の距
離が微小であって配線基板端部上の樹脂の供給スペース
が狭い場合でも、チップ・基板間における樹脂の毛細管
現象を利用してチップ・基板間に樹脂を流し込んで充填
することが可能になる。
As a result, even when the distance between the outer edge of the chip and the outer edge of the substrate is small and the resin supply space on the end portion of the wiring board is narrow, the capillary action of the resin between the chip and the substrate is used to make use of the chip / substrate. It becomes possible to fill the resin by pouring it in between.

【0021】このような方法によれば、配線基板端部上
の樹脂の供給スペースが狭い場合でも、チップ外縁・基
板外縁間の距離が微小であっての場合でも、従来と同様
のディスペンサと使用樹脂の性質に見合った口径を有す
るニードルを使用でき、ニードルの口径に関係なくチッ
プ・基板間に対してほぼ一定量の樹脂を安定・確実に供
給でき、樹脂がチップ上面に乗り上げたり樹脂が基板端
面から垂れ下がりすることがなく、パッケージの仕上が
り寸法のばらつきや外観上の不具合の発生を抑止するこ
とが可能になる。
According to such a method, even when the resin supply space on the end portion of the wiring substrate is narrow, or even when the distance between the chip outer edge and the substrate outer edge is small, the same dispenser as in the prior art is used. You can use a needle with a diameter that matches the properties of the resin, and regardless of the diameter of the needle, you can stably and reliably supply an almost constant amount of resin between the chip and the substrate. It does not hang down from the end face, and it is possible to suppress variations in the finished dimensions of the package and appearance defects.

【0022】[0022]

【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。図1乃至図3は、本発明の一実施例に係る
片面樹脂封止型パッケージ構造を有する半導体装置の製
造工程、特に樹脂封止工程の一例を概略的に示してい
る。
Embodiments of the present invention will be described below in detail with reference to the drawings. 1 to 3 schematically show an example of a manufacturing process of a semiconductor device having a single-sided resin-sealed package structure according to an embodiment of the present invention, particularly a resin-sealed process.

【0023】図4は、完成後の半導体装置の断面構造を
示している。この半導体装置は、一主面に被接続部1b
を含む配線1aを有する配線基板1と、上記基板の一主
面にフェースダウン型に実装された半導体チップ2と、
上記チップと基板との間に樹脂が充填されて硬化された
樹脂層5と、前記基板の他の主面側に導出・露出され、
前記チップに電気的に接続された外部接続用端子4とを
具備する。
FIG. 4 shows a sectional structure of the completed semiconductor device. This semiconductor device has a connection part 1b on one main surface.
A wiring substrate 1 having a wiring 1a including a semiconductor chip 2 mounted face down on one main surface of the substrate,
A resin layer 5 filled with a resin between the chip and the substrate and cured, and led out / exposed to the other main surface side of the substrate,
And an external connection terminal 4 electrically connected to the chip.

【0024】次に、配線基板1と半導体チップ2とをボ
ンディングするまでの工程の一例を簡単に説明する。上
記チップ2として、素子形成面の外部接続用パッド部上
に導電性物質、例えば金属からなるバンプ電極(例えば
直径100μm、高さ30μm)2aが形成されている
ものを用意する。上記バンプ電極2aは、例えば電気メ
ッキ法により形成された金バンプあるいはボールボンデ
ィング法により形成された金のボールバンプである。
Next, an example of steps for bonding the wiring board 1 and the semiconductor chip 2 will be briefly described. As the chip 2, a chip having a bump electrode (for example, a diameter of 100 μm and a height of 30 μm) 2a made of a conductive substance, such as a metal, is prepared on the pad for external connection on the element formation surface. The bump electrodes 2a are, for example, gold bumps formed by electroplating or gold ball bumps formed by ball bonding.

【0025】前記配線基板1として、一主面に被接続部
1bを含む配線1aを有し、上記被接続部1bからスル
ーホール配線3を介して他の主面側に導出・露出され、
格子状に配列された平面型の外部接続用端子4を具備す
るものを用意する。
The wiring board 1 has a wiring 1a including a connected portion 1b on one main surface, and is led out and exposed from the connected portion 1b to the other main surface side through the through-hole wiring 3.
The thing provided with the planar type external connection terminal 4 arranged in the shape of a lattice is prepared.

【0026】本例では、上記基板1は、一主面に対して
ほぼ同一平面(平面性が±10μm程度)を成すように
配線1aが埋め込み形成されている。なお、前記基板1
の一主面に被接続部1bを形成する際には、一主面に配
線1aを有する基板1を例えば真空吸着機構付きのスク
リーン印刷機のステージ上に固定し、基板上1でチップ
の金属バンプ電極2aに対応する部分に平面型の接続パ
ッド(例えば直径150μm、高さ80μm)1bを形
成する。この際、チップのバンプ電極2aに対応する開
口(例えば150μm×150μm)を有するメタルマ
スクを用いて基板の配線形成面上に導電性ペースト、例
えば銀ペースト(銀の粒径1μm、粘度100ps)を
スクリーン印刷して前記接続パッド1bを形成する。
In this example, the substrate 1 has the wiring 1a buried therein so as to be substantially flush with the main surface (planarity is about ± 10 μm). The substrate 1
When forming the connected portion 1b on one main surface, the substrate 1 having the wiring 1a on one main surface is fixed on, for example, the stage of a screen printing machine with a vacuum suction mechanism, and on the substrate 1 the metal of the chip is attached. A flat type connection pad (for example, diameter 150 μm, height 80 μm) 1b is formed in a portion corresponding to the bump electrode 2a. At this time, a conductive paste, for example, a silver paste (silver particle size 1 μm, viscosity 100 ps) is formed on the wiring formation surface of the substrate using a metal mask having openings (for example, 150 μm × 150 μm) corresponding to the bump electrodes 2a of the chip. The connection pad 1b is formed by screen printing.

【0027】次に、チップ2を真空吸着し得る機構を有
するボンディング装置を用いて基板1上にチップ2をフ
ェースダウン型に実装するためにフリップチップボンデ
ィングを行う。この場合、上記基板の接続パッド1bに
対してチップの対応するバンプ電極2aが対向するよう
に配置し、ボンディングヘッドを押し下げることにより
接続パッドにバンプ電極の少なくとも先端部を埋め込む
ように圧入して両者を固定させ、この状態で前記接続パ
ッド1b用の銀ペーストを熱硬化させることにより両者
を接合する。
Next, flip-chip bonding is carried out to mount the chip 2 on the substrate 1 in a face-down type by using a bonding apparatus having a mechanism capable of vacuum-adsorbing the chip 2. In this case, the bump electrodes 2a corresponding to the chip are arranged so as to face the connection pads 1b on the substrate, and the bonding head is pressed down to press-fit the connection pads so that at least the tip portions of the bump electrodes are embedded. Are fixed, and in this state, the silver paste for the connection pad 1b is thermally cured to bond them.

【0028】次に、上記したように基板上にチップがフ
リップチップボンディングされた状態において樹脂層5
を形成する。この樹脂層5は、チップと基板との間(本
例では30〜40μm)に充填された部分と、チップの
外周側面上縁部から基板上面の外周縁部までを覆い、チ
ップの各外周側面部にほぼ均等なフィレットを有する部
分とを有する。
Next, in the state where the chip is flip-chip bonded on the substrate as described above, the resin layer 5 is formed.
To form. The resin layer 5 covers the portion filled between the chip and the substrate (30 to 40 μm in this example), the outer peripheral side upper edge of the chip to the outer peripheral edge of the substrate upper surface, and each outer peripheral side surface of the chip. And a portion having a substantially uniform fillet.

【0029】ところで、基板1のサイズが、例えば縦横
とも15mm、厚さ0.2mmであり、チップ2のサイ
ズは、例えば縦横とも13mm、厚さ0.25mmであ
るとすると、基板1の各辺部においてチップ外縁・基板
外縁間の距離S3が極めて小さく(1mm以下)、基板
1の一辺部の端部上に樹脂を供給する際に、樹脂の供給
スペースが狭いので、樹脂がチップ上面に乗り上げたり
基板端面から垂れ下がることがないように工夫する必要
がある。
If the size of the substrate 1 is, for example, 15 mm in length and width and 0.2 mm in thickness, and the size of the chip 2 is, for example, 13 mm in length and width and 0.25 mm in thickness, each side of the substrate 1 is assumed. The distance S3 between the outer edge of the chip and the outer edge of the substrate is extremely small (1 mm or less), and when the resin is supplied onto the end of one side of the substrate 1, the resin supply space is narrow, so the resin runs on the top surface of the chip. It is necessary to devise it so that it does not hang down from the substrate end face.

【0030】そこで、本実施例においては、前記樹脂を
充填する際、図1乃至図3に示すように、樹脂供給補助
用の補助板(例えばゴム板)11を使用し、その片面に
封止用樹脂5aを供給する工程と、この後、上記ゴム板
の片面が基板1の一主面にほぼ垂直になり、かつ、ゴム
板の片面のうちの封止用樹脂が供給された部分が基板の
一主面より上側になるように、ゴム板の片面を基板の一
端面に対して密着状態で当接させる工程と、この後、ゴ
ム板を基板との当接端面に沿ってほぼ垂直方向に下方に
滑らせる(あるいは基板をゴム板との当接端面に沿って
ほぼ垂直方向に上方に滑らせる)ことによりゴム板と基
板とを引き離すことによって、ゴム板の片面上の樹脂を
基板端部上に移し、この樹脂をチップ・基板間の開口部
に供給する工程とを具備する。
Therefore, in the present embodiment, when the resin is filled, as shown in FIGS. 1 to 3, an auxiliary plate (for example, a rubber plate) 11 for assisting the resin supply is used, and one side thereof is sealed. The step of supplying the resin for molding 5a, and thereafter, one surface of the rubber plate becomes substantially perpendicular to one main surface of the substrate 1, and the portion of the one surface of the rubber plate to which the sealing resin is supplied is the substrate. Step of bringing one side of the rubber plate into close contact with one end surface of the substrate so that the rubber plate is above the main surface, and thereafter, the rubber plate is in a substantially vertical direction along the contact end surface with the substrate. The resin on one side of the rubber plate by pulling the rubber plate away from the substrate by sliding it downwards (or sliding the substrate upwards in a substantially vertical direction along the contact end face with the rubber plate). And the process of supplying this resin to the opening between the chip and the substrate. Comprising.

【0031】そして、ゴム板を基板から引き離し、樹脂
の充填を完了した後、充填させた樹脂を熱などにより硬
化させることによりチップ・基板間に樹脂層を形成し、
片面樹脂封止型パッケージ構造を有する半導体装置が完
成する。
Then, after the rubber plate is separated from the substrate and the filling of the resin is completed, the filled resin is cured by heat or the like to form a resin layer between the chip and the substrate.
A semiconductor device having a single-sided resin-sealed package structure is completed.

【0032】なお、本実施例の各工程は、既存の半導体
装置用の自動組立装置および新規に制作される専用装置
を用いて自動的に実施される。前記ゴム板の片面に封止
用樹脂を供給する際、図1に示したように、前記前記ゴ
ム板の片面上に例えば従来と同様の樹脂供給用ディスペ
ンサを用いてそのニードル10からほぼ一定量の樹脂を
供給してもよいが、図4(a)、(b)に示すように、
樹脂借受用補助板12を使用し、上記樹脂借受用補助板
上にディスペンサのニードルからほぼ一定量の樹脂を供
給した後、上記樹脂借受用補助板の上面上で前記樹脂供
給補助用のゴム板11の下端面を滑らせることにより上
記樹脂借受用補助板上の樹脂を前記ゴム板の片面上に拭
い取るようにしてもよい。
The steps of this embodiment are automatically carried out by using an existing automatic assembly apparatus for semiconductor devices and a newly produced special apparatus. When the sealing resin is supplied to one side of the rubber plate, as shown in FIG. 1, a substantially constant amount is dispensed from the needle 10 onto the one side of the rubber plate by using, for example, a conventional resin supply dispenser. However, as shown in FIGS. 4 (a) and 4 (b),
Using the resin borrowing auxiliary plate 12, after supplying a substantially constant amount of resin from the needle of the dispenser onto the resin borrowing auxiliary plate, the resin feed assisting rubber plate is placed on the upper surface of the resin borrowing auxiliary plate. The resin on the resin borrowing auxiliary plate may be wiped off on one surface of the rubber plate by sliding the lower end surface of 11.

【0033】また、前記ゴム板11の材質として、前記
ゴム板上の樹脂が配線基板上に移り易くなるように前記
樹脂をはじく性質(塑液性)を有し、かつ、前記配線基
板と比べて弾力性があり、配線基板に対して密着性を有
するものを使用することが望ましい。上記したような性
質を有するゴム板として、前記配線基板の絶縁基材がセ
ラミック系あるいは樹脂系である場合には例えばシリコ
ーンゴムを使用することが望ましい。
Further, as a material of the rubber plate 11, the resin on the rubber plate has a property of repelling the resin (plasticity) so that the resin can be easily transferred onto the wiring board, and compared with the wiring board. It is desirable to use a material that is flexible and has adhesion to the wiring board. As the rubber plate having the above-mentioned properties, it is desirable to use, for example, silicone rubber when the insulating base material of the wiring board is a ceramic type or a resin type.

【0034】また、前記ゴム板のサイズとして、その厚
さは任意のものを使用できるが、その広さは、ゴム板を
配線基板との当接端面に沿って滑らせる時にゴム板片面
上の樹脂がゴム板裏面側に回り込むことを防止し得る程
度に広いもの(例えば前記配線基板よりも幅が広いも
の)を使用することにより、ゴム板上の樹脂を配線基板
上に移す作業を容易に行うことが可能になる。
As the size of the rubber plate, any thickness can be used, but the width of the rubber plate is on one side of the rubber plate when the rubber plate is slid along the contact end face with the wiring board. By using a resin that is wide enough to prevent the resin from wrapping around to the back side of the rubber plate (for example, one that is wider than the wiring board), it is easy to transfer the resin on the rubber board onto the wiring board. It will be possible to do.

【0035】即ち、上記実施例の方法においては、チッ
プ・基板間に対して樹脂を充填する際に、樹脂供給のゴ
ム板の片面に封止用樹脂を供給した後、ゴム板の片面が
基板の一主面にほぼ垂直になるように基板の一端面に対
して密着させて当接させ、ゴム板を基板との当接端面に
沿って滑らせ、樹脂を基板端部上に移してチップ・基板
間の開口部に供給する。
That is, in the method of the above-mentioned embodiment, when the resin is filled between the chip and the substrate, the sealing resin is supplied to one side of the resin-supplied rubber plate, and then one side of the rubber plate is changed to the substrate. The one end surface of the substrate so as to be substantially perpendicular to one main surface of the substrate, and abut the rubber plate, slide the rubber plate along the contact end face with the substrate, and transfer the resin onto the end portion of the substrate.・ Supply to the opening between the substrates.

【0036】これにより、チップ外縁・基板外縁間の距
離S3が微小であって基板端部上の樹脂の供給スペース
が狭い場合でも、ゴム板の片面上の樹脂を基板端部上に
移し、この樹脂をチップ・基板間の開口の中央部近傍の
チップ側面に付着させることが可能になる。このように
チップ側面に樹脂が付着すると、樹脂の毛細管現象が始
まり、チップ・基板間における樹脂の毛細管現象を利用
してチップ・基板間に樹脂を流し込んで充填することが
可能になる。
As a result, even when the distance S3 between the outer edge of the chip and the outer edge of the substrate is small and the resin supply space on the edge of the substrate is narrow, the resin on one side of the rubber plate is transferred onto the edge of the substrate. The resin can be attached to the side surface of the chip near the center of the opening between the chip and the substrate. When the resin adheres to the side surface of the chip in this way, the capillary action of the resin starts, and it becomes possible to flow and fill the resin between the chip and the substrate by utilizing the capillary action of the resin between the chip and the substrate.

【0037】従って、上記実施例の方法によれば、チッ
プ外縁・基板外縁間の距離が微小の場合でも、従来と同
様のディスペンサと使用樹脂の性質に見合った口径を有
するニードルを使用でき、ニードルの口径に関係なくチ
ップ・基板間に対してほぼ一定量の樹脂を安定・確実に
供給でき、樹脂がチップ上面に乗り上げたり樹脂が基板
端面から垂れ下がりすることがなく、パッケージの仕上
がり寸法のばらつきや外観上の不具合の発生を抑止する
ことが可能になる。これにより、半導体装置の歩留りの
向上、コストダウンを図ることが可能になる。
Therefore, according to the method of the above-mentioned embodiment, even when the distance between the outer edge of the chip and the outer edge of the substrate is very small, the same dispenser as the conventional one and a needle having a diameter suitable for the properties of the resin used can be used. A stable and reliable supply of a fixed amount of resin between the chip and the substrate can be achieved regardless of the diameter of the package, and the resin does not run onto the top surface of the chip and the resin does not hang down from the substrate end surface. It is possible to prevent the appearance of defects. This makes it possible to improve the yield of semiconductor devices and reduce the cost.

【0038】なお、前記毛細管現象を促進するために、
樹脂充填部に例えば60℃程度の温度を加えるようにす
れば、樹脂の粘度が低下し、樹脂の流し込み速度が向上
する。 また、前記チップ・基板間に対して樹脂を充填
する工程(ゴム板の片面に樹脂を供給した後、ゴム板の
片面が基板の一主面にほぼ垂直になるように基板の一端
面に対して密着状態で当接させ、ゴム板を基板との当接
端面に沿って滑らせ、樹脂を基板端部上に移してチップ
・基板間の開口部に供給する工程)は、必要に応じて複
数回に分けて実施することが望ましい。
In order to promote the capillary phenomenon,
If a temperature of, for example, about 60 ° C. is applied to the resin-filled portion, the viscosity of the resin is reduced and the resin pouring speed is improved. In addition, the step of filling the resin between the chip and the substrate (after supplying the resin to one side of the rubber plate, the one side of the rubber plate is almost perpendicular to one main surface of the substrate with respect to one end surface of the substrate). Contact with each other in a close contact state, slide the rubber plate along the contact end surface with the substrate, transfer the resin onto the end portion of the substrate, and supply the resin to the opening between the chip and the substrate). It is desirable to carry out in multiple steps.

【0039】即ち、ゴム板に1回で供給する樹脂量を少
なくするものとし、まず、ゴム板に1回目に供給した樹
脂を基板端部上に移する。この1回目に移した樹脂が毛
細管現象によりチップ・基板間に充填され、基板端部上
の樹脂量が減少した後に、ゴム板に2回目に供給した樹
脂を基板端部上に移す。このような作業を繰り返す。
That is, the amount of resin supplied to the rubber plate at one time is reduced, and first, the resin supplied to the rubber plate at the first time is transferred onto the end portion of the substrate. The resin transferred for the first time is filled between the chip and the substrate due to the capillary phenomenon, and after the amount of the resin on the end portion of the substrate is reduced, the resin supplied for the second time to the rubber plate is transferred over the end portion of the substrate. Such work is repeated.

【0040】このようにすれば、パッケージ構造を一層
小型化するためにチップ外縁・基板外縁間の距離が0.
2〜0.3mm程度に小さくなって基板端部上の樹脂の
供給スペースが狭くなる場合でも、基板端部上に1回で
移す樹脂量が少なくて済むので、チップサイズが大きく
て充填しようとする樹脂量が多い場合でも対応すること
が可能になる。
In this way, the distance between the outer edge of the chip and the outer edge of the substrate is reduced to 0.
Even if the resin supply space on the edge of the substrate is narrowed down to about 2 to 0.3 mm, the amount of resin to be transferred onto the edge of the substrate at one time can be small, so the chip size is large and filling is attempted. Even if the amount of resin to be used is large, it is possible to deal with it.

【0041】また、チップ・基板間に1回で供給する樹
脂量が少なくなってチップ・基板間の開口の中央部から
樹脂が充填され始めるので、樹脂が空気を巻き込むこと
に起因するボイドの発生を抑制でき、チップ・基板間樹
脂層の信頼性を向上させることが可能になる。
Further, since the amount of resin supplied at one time between the chip and the substrate is reduced and the resin starts to be filled from the central portion of the opening between the chip and the substrate, voids caused by the air being entrained by the resin are generated. Can be suppressed, and the reliability of the resin layer between the chip and the substrate can be improved.

【0042】また、前記したようにニードルから樹脂を
供給する際、樹脂が適度の流動性などを呈する条件に設
定し、あるいは、液状の樹脂を使用する。また、前記樹
脂としては、樹脂層として形成された状態でチップ・基
板の材質の違い(ヤング率、熱膨脹率など)から生じる
内部応力によりチップ・基板相互の接続部が劣化するこ
とを緩和する性質を持つ、かつ、チップ・基板間への充
填時にチップ・基板間へ入り込める径(例えば25μm
以下)のフィラーを含むものを選択することが望まし
い。
Further, as described above, when the resin is supplied from the needle, the resin is set to the condition that it exhibits appropriate fluidity, or the liquid resin is used. Further, the resin has a property of alleviating deterioration of the connection portion between the chip and the substrate due to internal stress caused by the difference in the material of the chip and the substrate (Young's modulus, coefficient of thermal expansion, etc.) when formed as a resin layer. And has a diameter that allows it to enter between the chip and substrate when filling it between the chip and substrate (for example, 25 μm
It is desirable to select one containing the following fillers.

【0043】また、上記実施例では、樹脂を供給する
際、1枚のゴム板を基板の一辺の端面に対して密着状態
で当接させて一辺部上にのみ供給したが、2枚のゴム板
を基板の直交する二辺の各端面に対してそれぞれ密着状
態で当接させて二辺部上にそれぞれ供給するようにして
もよく、さらには、4枚のゴム板を基板のチップの四辺
の各端面に対してそれぞれ密着状態で当接させて四辺部
上にそれぞれ供給するようにしてもよい。
Further, in the above embodiment, when the resin is supplied, one rubber plate is brought into close contact with the end face of one side of the substrate and supplied only on one side, but two rubber plates are supplied. The plate may be brought into close contact with the end faces of the two orthogonal sides of the substrate so as to be supplied onto the two sides, respectively. Further, four rubber plates may be provided on the four sides of the chip of the substrate. It is also possible to contact the respective end faces of the above in close contact with each other and supply them to the four side portions.

【0044】また、前記チップ・基板間に充填させた樹
脂を硬化させる際、チップ・基板に荷重を加えてチップ
のバンプ電極と基板の接続パッドとの位置ずれを防ぎな
がら樹脂を硬化させることが望ましい。
When the resin filled between the chip and the substrate is cured, the resin may be cured while applying a load to the chip and the substrate to prevent displacement between the bump electrodes of the chip and the connection pads of the substrate. desirable.

【0045】また、基板として、その一主面上の外周縁
端部にベタ型配線パターンを形成したものを用意すれ
ば、前記フリップチップボンディングを行う際に、前記
ベタ型配線パターンによる補強的な作用により、配線基
板の割れや反りなどの発生が抑制され、完成品の歩留り
が良くなり、完成品をメモリカードなどに組み込んだ場
合に耐ノイズ性も良好になる。また、前記バンプ電極
を、チップ側ではなく基板側に形成してもよい。
Further, if a substrate having a solid wiring pattern formed on the outer peripheral edge portion on one main surface is prepared as the substrate, it is reinforced by the solid wiring pattern when performing the flip chip bonding. By the action, the generation of cracks or warpage of the wiring board is suppressed, the yield of the finished product is improved, and the noise resistance is also improved when the finished product is incorporated into a memory card or the like. Further, the bump electrodes may be formed on the substrate side instead of the chip side.

【0046】なお、基板およびチップは、外形が正方形
のものに限らず、長方形のものを用いてもよい。また、
基板は、アルミナ系、窒化アルミ系のものに限らず、樹
脂系のもの(BTレジン基板など)を用いてもよい。ま
た、基板は、図7に示したように、配線および外部接続
用端子が基板に対してほぼ同一平面を成すように埋め込
まれているもの(例えばアルミナ系の絶縁基材に対して
グリーンシート法により形成されたものとか、樹脂系の
絶縁基材に対してプリプレグ法により形成されたもの)
に限らず、図6に示したように、配線および外部接続用
端子が基板から突出する状態で形成されているものを用
いてもよい。また、基板は、ブラインドビアホールを介
して上下面が電気的に接続されているものや多層構造の
ものを用いてもよい。
The substrate and the chip are not limited to have a square outer shape, but may have a rectangular outer shape. Also,
The substrate is not limited to an alumina-based or aluminum nitride-based substrate, and a resin-based substrate (BT resin substrate or the like) may be used. Further, as shown in FIG. 7, the substrate is one in which wiring and external connection terminals are embedded so as to be substantially flush with the substrate (for example, a green sheet method is applied to an alumina-based insulating base material). Or a resin-based insulating base material formed by the prepreg method)
However, as shown in FIG. 6, the wiring and the external connection terminal may be formed so as to project from the substrate. Further, the substrate may have a structure in which the upper and lower surfaces are electrically connected via a blind via hole or a multilayer structure.

【0047】また、チップを基板上にフリップチップボ
ンディングする際、前記実施例のように接続パッドにバ
ンプ電極の少なくとも先端部を埋め込むように圧入する
方法に限らず、前記特願平6−50757号に詳細に記
載されているように、例えば金の接続パッドと金のバン
プ電極との間で固相拡散を起こさせて接合させるように
してもよい。
Further, when the chip is flip-chip bonded onto the substrate, the method is not limited to the method of press-fitting so that at least the tip end portion of the bump electrode is embedded in the connection pad as in the above-mentioned embodiment, but the above-mentioned Japanese Patent Application No. 6-50757. As described in detail in Section 1), for example, solid phase diffusion may occur between the gold connection pad and the gold bump electrode so as to be joined.

【0048】[0048]

【発明の効果】上述したように本発明の半導体装置の製
造方法によれば、片面樹脂封止型パッケージ構造を有す
る半導体装置を製造するためにチップ・基板間に対して
樹脂を充填する際、チップ外縁・基板外縁間の距離が微
小の場合でも、従来と同様のディスペンサと使用樹脂の
性質に見合った口径を有するニードルを使用でき、パッ
ケージの仕上がり寸法のばらつきや外観上の不具合の発
生をニードルの口径に関係なく抑止でき、片面樹脂封止
型パッケージ構造の一層の小型化を図ることができる。
As described above, according to the method of manufacturing the semiconductor device of the present invention, when the resin is filled between the chip and the substrate to manufacture the semiconductor device having the single-sided resin-sealed package structure, Even if the distance between the outer edge of the chip and the outer edge of the substrate is very small, you can use the same dispenser as the conventional one and a needle with a diameter that matches the properties of the resin used. Can be suppressed regardless of the diameter, and the single-sided resin-sealed package structure can be further downsized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体装置の製造方法の一実施例に係
る片面樹脂封止型パッケージ構造を有する半導体装置の
製造工程、特に樹脂封止工程の一例の一部を概略的に示
す斜視図。
FIG. 1 is a perspective view schematically showing a part of an example of a manufacturing process of a semiconductor device having a single-sided resin-encapsulated package structure according to an embodiment of the method for manufacturing a semiconductor device of the present invention, particularly a resin-sealing process. .

【図2】図1の工程に続く工程の一例の一部を概略的に
示す斜視図および断面図。
FIG. 2 is a perspective view and a cross-sectional view schematically showing a part of an example of a step that follows the step of FIG.

【図3】図2の工程に続く工程の一例の一部を概略的に
示す断面図。
FIG. 3 is a sectional view schematically showing a part of an example of a step that follows the step of FIG.

【図4】図1乃至図3の樹脂封止工程を経て形成された
半導体装置の一例を示す斜視図および断面図。
4A and 4B are a perspective view and a cross-sectional view showing an example of a semiconductor device formed through the resin sealing process of FIGS.

【図5】図2の工程の変形例を概略的に示す斜視図。5 is a perspective view schematically showing a modified example of the process of FIG.

【図6】先願に係る片面樹脂封止型パッケージ構造の一
例を示す断面図。
FIG. 6 is a sectional view showing an example of a single-sided resin-sealed package structure according to the prior application.

【図7】他の先願に係る片面樹脂封止型パッケージ構造
の一例を示す断面図。
FIG. 7 is a sectional view showing an example of a single-sided resin-sealed package structure according to another prior application.

【図8】図6および図7の樹脂層の形成工程を示す図。FIG. 8 is a diagram showing a process of forming the resin layer of FIGS. 6 and 7;

【符号の説明】[Explanation of symbols]

1…配線基板、1a…配線、1b…被接続部(接続パッ
ド)、2…半導体チップ、2a…バンプ電極、3…スル
ーホール配線、4…外部接続用端子、5…樹脂層、5a
…樹脂、S3…チップ外縁・基板外縁間の距離、11…
ゴム板。
DESCRIPTION OF SYMBOLS 1 ... Wiring board, 1a ... Wiring, 1b ... Connected part (connection pad), 2 ... Semiconductor chip, 2a ... Bump electrode, 3 ... Through hole wiring, 4 ... External connection terminal, 5 ... Resin layer, 5a
… Resin, S3… Distance between chip outer edge and substrate outer edge, 11…
Rubber plate.

フロントページの続き (72)発明者 大島 有美子 神奈川県横浜市磯子区新磯子町33番地 株 式会社東芝生産技術研究所内Front Page Continuation (72) Inventor Yumiko Oshima 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Stock Company Toshiba Production Engineering Laboratory

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 一主面に被接続部を含む配線を有し、他
主面に外部接続用端子を導出・露出させた配線基板の被
接続部とこれに対応する半導体チップの電極端子部の位
置が対向するように半導体チップを配置する工程と、上
記配線基板の被接続部とこれに対応する半導体チップの
電極端子部を固定接続する工程と、この後、上記半導体
チップと配線基板との間に封止用樹脂を充填する工程
と、上記充填した封止用樹脂を硬化させる工程とを具備
し、前記封止用樹脂を充填する工程は、樹脂供給補助用
の補助板を使用し、その片面に封止用樹脂を供給する工
程と、この後、上記補助板の片面が前記配線基板の一主
面にほぼ垂直になり、かつ、上記補助板の片面のうちの
前記封止用樹脂が供給された部分が前記配線基板の一主
面より上側になるように、上記補助板の片面を上記配線
基板の少なくとも一端面に対して密着状態で当接させる
工程と、この後、前記補助板を前記配線基板との当接端
面に沿って下方に滑らせるあるいは前記配線基板を前記
補助板との当接端面に沿って上方に滑らせることにより
上記補助板と前記配線基板とを引き離すことによって、
上記補助板の片面上の前記封止用樹脂を前記配線基板端
部上に移し、この樹脂を前記チップ・基板間の開口部に
供給する工程とを具備することを特徴とする半導体装置
の製造方法。
1. A connected portion of a wiring board having wirings including a connected portion on one main surface, and external connection terminals led out and exposed on the other main surface, and an electrode terminal portion of a semiconductor chip corresponding to the connected portion. The step of arranging the semiconductor chip so that the positions of the semiconductor chips face each other, the step of fixedly connecting the connected part of the wiring board and the electrode terminal part of the semiconductor chip corresponding thereto, and then the semiconductor chip and the wiring board And a step of curing the filled sealing resin, wherein the step of filling the sealing resin uses an auxiliary plate for resin supply assistance. A step of supplying a sealing resin to one surface of the auxiliary board, and thereafter, one surface of the auxiliary plate is substantially perpendicular to one main surface of the wiring board, and The resin-supplied part should be above the main surface of the wiring board. A step of bringing one surface of the auxiliary plate into close contact with at least one end surface of the wiring board; and thereafter, sliding the auxiliary plate downward along the contact end surface with the wiring board, or By sliding the wiring board upward along the contact end surface with the auxiliary plate, the auxiliary board and the wiring board are separated from each other,
A step of transferring the sealing resin on one surface of the auxiliary plate onto the end portion of the wiring board, and supplying the resin to the opening between the chip and the board. Method.
【請求項2】 請求項1記載の半導体装置の製造方法に
おいて、前記チップ・基板間に対して樹脂を充填する工
程を複数回に分けて実施することを特徴とする半導体装
置の製造方法。
2. The method of manufacturing a semiconductor device according to claim 1, wherein the step of filling the resin between the chip and the substrate is performed in plural times.
【請求項3】 請求項2記載の半導体装置の製造方法に
おいて、前記補助板の片面に封止用樹脂を供給する際、
樹脂借受用補助板を使用し、上記樹脂借受用補助板上に
樹脂供給用ディスペンサのニードルからほぼ一定量の樹
脂を供給する工程と、上記樹脂借受用補助板の上面上で
前記樹脂供給補助用の補助板の下端面を滑らせることに
より上記樹脂借受用補助板上の樹脂を前記樹脂供給補助
用の補助板の片面上に拭い取る工程とを具備することを
特徴とする半導体装置の製造方法。
3. The method of manufacturing a semiconductor device according to claim 2, wherein when a sealing resin is supplied to one surface of the auxiliary plate,
Using the resin borrowing auxiliary plate, a step of supplying a substantially constant amount of resin on the resin borrowing auxiliary plate from the needle of the resin feeding dispenser, and the resin feeding assisting plate on the upper surface of the resin borrowing auxiliary plate. And sliding the lower end surface of the auxiliary plate to wipe the resin on the resin borrowing auxiliary plate onto one surface of the auxiliary plate for assisting the resin supply, the method for manufacturing a semiconductor device. .
【請求項4】 請求項1乃至3のいずれか1項に記載の
半導体装置の製造方法において、前記樹脂供給補助用の
補助板の材質として、前記配線基板と比べて弾力性があ
り、前記配線基板との密着性がよく、前記樹脂に対する
塑液性を有するものを使用することを特徴とする半導体
装置の製造方法。
4. The method of manufacturing a semiconductor device according to claim 1, wherein a material of the auxiliary plate for assisting the resin supply is more elastic than that of the wiring board, and the wiring is provided. A method of manufacturing a semiconductor device, which uses a material having good adhesion to a substrate and having a plastic liquid property with respect to the resin.
【請求項5】 請求項4記載の半導体装置の製造方法に
おいて、前記樹脂供給補助用の補助板として、前記配線
基板よりも広いものを使用することを特徴とする半導体
装置の製造方法。
5. The method of manufacturing a semiconductor device according to claim 4, wherein an auxiliary plate for assisting the resin supply is wider than the wiring board.
【請求項6】 請求項1乃至5のいずれか1項に記載の
半導体装置の製造方法において、前記配線基板の絶縁基
材はセラミック系あるいは樹脂系であり、前記樹脂供給
補助用の補助板の材質としてシリコーンゴムを使用する
ことを特徴とする半導体装置の製造方法。
6. The method of manufacturing a semiconductor device according to claim 1, wherein the insulating base material of the wiring board is a ceramic type or a resin type, and an auxiliary plate for assisting the resin supply is formed. A method of manufacturing a semiconductor device, characterized in that silicone rubber is used as a material.
JP29523294A 1994-11-29 1994-11-29 Manufacture of semiconductor device Pending JPH08153740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29523294A JPH08153740A (en) 1994-11-29 1994-11-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29523294A JPH08153740A (en) 1994-11-29 1994-11-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH08153740A true JPH08153740A (en) 1996-06-11

Family

ID=17817928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29523294A Pending JPH08153740A (en) 1994-11-29 1994-11-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH08153740A (en)

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