JPH08151260A - Dielectric porcelain composition - Google Patents

Dielectric porcelain composition

Info

Publication number
JPH08151260A
JPH08151260A JP6293030A JP29303094A JPH08151260A JP H08151260 A JPH08151260 A JP H08151260A JP 6293030 A JP6293030 A JP 6293030A JP 29303094 A JP29303094 A JP 29303094A JP H08151260 A JPH08151260 A JP H08151260A
Authority
JP
Japan
Prior art keywords
weight
parts
dielectric
batio
mgo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6293030A
Other languages
Japanese (ja)
Other versions
JP3250923B2 (en
Inventor
Nobuyoshi Fujikawa
信儀 藤川
Yoshihiro Fujioka
芳博 藤岡
Yasushi Yamaguchi
泰史 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
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Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP29303094A priority Critical patent/JP3250923B2/en
Priority to US08/545,459 priority patent/US5650367A/en
Publication of JPH08151260A publication Critical patent/JPH08151260A/en
Application granted granted Critical
Publication of JP3250923B2 publication Critical patent/JP3250923B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE: To provide the dielectric porcelain composition having relative permittivity of >=2500, a sintering temperature of <=1300 deg.C, an electrostatic capacity temperature change rate satisfying the X7R of the EIA standard, a small dielectric loss of <=2.5%, and an insulating resistance of >=10<4> MΩ, and little in electric voltage dependency. CONSTITUTION: The dielectric porcelain composition comprises 100 pts.wt. of BaTiO3 , 0.8-2.5 pts.wt. of Nb2 O5 , 0.06-0.70 pt.wt. of MgO, 0.005-0.520 pt.wt. of Pr6 O11 or Gd2 O3 , 0.01-0.30 pt.wt. (converted into MnCO3 ) of MnO, and preferably further 0.05-0.50 pt.wt. of at least one of SiO2 and Al2 O3 and <=0.5 pt.wt. of ZnO, wherein the Nb2 O5 /MgO molar ratio is 0.5-2.2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、BaTiO3 を主成分
とし、Nb2 5 ,MgO,MnO、Pr611または
Gd2 3 を含有する誘電体磁器組成物に関するもので
ある。
The present invention relates to a BaTiO 3 as a main component, to a Nb 2 O 5, MgO, MnO , dielectric ceramic composition containing a Pr 6 O 11 or Gd 2 O 3.

【0002】[0002]

【従来技術】従来、誘電体磁器組成物は、積層セラミッ
クコンデンサ等の材料として使用されている。このよう
な積層セラミックコンデンサは内部電極が形成された誘
電体磁器組成物の生シートを所定容量になるように複数
枚積層した後、一体的に焼成して構成されている。例え
ば、X7R(EIA規格:静電容量の温度特性が−55
℃〜125℃において±15%以内)の積層セラミック
コンデンサに使用される誘電体磁器組成物は、+25℃
における比誘電率が2500以上と高く、かつ、一枚当
たりの生シートの厚みが15μm以下であって、焼成温
度が例えば1300℃以下であることが重要となってく
る。
2. Description of the Related Art Conventionally, dielectric ceramic compositions have been used as materials for laminated ceramic capacitors and the like. Such a monolithic ceramic capacitor is constructed by laminating a plurality of green sheets of a dielectric ceramic composition having internal electrodes so as to have a predetermined capacity, and then integrally firing them. For example, X7R (EIA standard: temperature characteristic of capacitance is -55
The dielectric ceramic composition used for the laminated ceramic capacitor of +/- 15 ° C at + 25 ° C
It is important that the relative dielectric constant is as high as 2500 or more, the thickness of each green sheet is 15 μm or less, and the firing temperature is 1300 ° C. or less.

【0003】即ち、25℃における比誘電率が2500
以上であって、生シートの厚みを15μm以下にするこ
とにより、内部電極間の生シートの厚みや対向面積の極
小化が可能となり、積層セラミックコンデンサの小型化
が達成できる。また、焼成温度を1300℃以下にする
ことにより、内部電極の材料の選択幅が増え、例えば、
高価なPd100%の材料から安価なPd−Agの使用
が可能となる。尚、上記に加え、誘電体磁器組成物とし
ての諸特性である誘電損失tanδ、絶縁抵抗を充分に
考慮しなくてはならず、さらに、誘電損失の交流電圧依
存性が小さいことが望まれる。
That is, the relative dielectric constant at 25 ° C. is 2500
As described above, by setting the thickness of the green sheet to 15 μm or less, the thickness of the green sheet between the internal electrodes and the facing area can be minimized, and the multilayer ceramic capacitor can be downsized. Further, by setting the firing temperature to 1300 ° C. or lower, the selection range of the material of the internal electrodes is increased, and for example,
It is possible to use inexpensive Pd-Ag from expensive 100% Pd material. In addition to the above, the dielectric loss tan δ and the insulation resistance, which are various characteristics of the dielectric ceramic composition, must be fully taken into consideration, and it is further desired that the dielectric loss has a small AC voltage dependency.

【0004】従来、比誘電率を向上させたものとして、
BaTiO3 、Nb2 5 、ZnOを含む誘電体磁器組
成物がすでに提案されている(特開昭59−18162
号公報、特開昭59−18159号公報等参照)。この
ような誘電体磁器組成物によれば、比誘電率を2000
〜3000とすることができる。しかしながら、上述の
誘電体磁器組成物は高い比誘電率を得ることができて
も、誘電損失tanδが大きいため、生シートを薄くす
ることができず、結局、積層コンデンサに使用した場
合、高い比誘電率が得られなかった。
Conventionally, as a device having an improved relative dielectric constant,
A dielectric ceramic composition containing BaTiO 3 , Nb 2 O 5 , and ZnO has already been proposed (Japanese Patent Laid-Open No. 59-18162).
JP, JP-A-59-18159, etc.). Such a dielectric ceramic composition has a relative dielectric constant of 2000.
Can be up to 3000. However, even though the above-mentioned dielectric ceramic composition can obtain a high relative permittivity, the dielectric loss tan δ is large, so that the green sheet cannot be thinned, and when used in a multilayer capacitor, a high relative dielectric constant is eventually obtained. Dielectric constant could not be obtained.

【0005】このように誘電損失tanδを小さくする
ために開発された系として、BaTiO3 ,Nb
2 5 ,MgO,La2 3 を含む誘電体磁器組成物が
すでに提案されている(特公平5−10766号公報参
照)。また、BaTiO3 にNb25 /MgOのモル
比を2.3〜4の範囲になるようにNb2 5 とMgO
を加え、これに希土類を0.1〜0.5重量%添加した
組成物が開示されている(特公昭55−19007号公
報参照)。
As a system developed to reduce the dielectric loss tan δ in this way, BaTiO 3 , Nb is used.
A dielectric ceramic composition containing 2 O 5 , MgO, and La 2 O 3 has already been proposed (see Japanese Patent Publication No. 5-10766). In addition, Nb 2 O 5 and MgO are mixed so that the molar ratio of Nb 2 O 5 / MgO to BaTiO 3 is in the range of 2.3 to 4.
And a rare earth element is added thereto in an amount of 0.1 to 0.5% by weight (see Japanese Patent Publication No. 55-19007).

【0006】[0006]

【発明が解決しようとする問題点】しかしながら、上記
したいずれの誘電体磁器でも、比誘電率が2200程度
以下と小さく小型大容量化に対応できない。また、未だ
誘電損失が大きく、生シートを薄くすることが困難であ
るという問題があった。
However, none of the above-mentioned dielectric ceramics has a small relative permittivity of about 2200 or less and cannot cope with a reduction in size and capacity. Further, there is a problem that the dielectric loss is still large and it is difficult to make the green sheet thin.

【0007】さらに、上記したいずれの誘電体磁器で
も、誘電損失の交流電圧依存性が大きくなり、誘電体の
薄層化に対応することができなくなることが考えられ、
この場合には、コンデンサの小型化、大容量化に対応で
きないという問題があった。
Furthermore, in any of the above-mentioned dielectric ceramics, it is considered that the AC loss dependency of the dielectric loss becomes large and it becomes impossible to cope with the thinning of the dielectric material.
In this case, there is a problem that it is not possible to cope with the miniaturization and the large capacity of the capacitor.

【0008】[0008]

【問題点を解決するための手段】本発明者等は上記問題
点に鑑みて鋭意検討した結果、チタン酸バリウムBaT
iO3 を主成分とし、Nb2 5 、MgO、Pr6 11
またはGd2 3 、MnOを所定の組成比で含有するも
ので、Nb2 5 のMgOに対するモル比を0.5〜
2.2とすることにより、比誘電率が2500以上で、
静電容量の温度変化率がEIA規格のX7Rを満たし、
誘電損失が2.5%以下と小さく、交流電圧を2000
V/cm印加した時でも誘電損失が3.0%以下と交流
電圧依存性が小さく、薄層化が可能な誘電体磁器を得る
ことができることを見出し、本発明に至った。
[Means for Solving the Problems] As a result of intensive studies made by the present inventors in view of the above problems, barium titanate BaT
iO 3 as a main component, Nb 2 O 5 , MgO, Pr 6 O 11
Alternatively, it contains Gd 2 O 3 and MnO in a predetermined composition ratio, and the molar ratio of Nb 2 O 5 to MgO is 0.5 to
By setting 2.2, the relative dielectric constant is 2500 or more,
The temperature change rate of capacitance satisfies X7R of EIA standard,
Dielectric loss is as small as 2.5% or less, and AC voltage is 2000
The inventors have found that a dielectric porcelain having a small dielectric loss of 3.0% or less even when a voltage of V / cm is applied and having a small AC voltage dependence and capable of being thinned can be obtained, and completed the present invention.

【0009】即ち、本発明の誘電体磁器は、BaTiO
3 100重量部に対して、Nb2 5 を0.8〜2.5
重量部、MgOを0.06〜0.70重量部、Pr6
11またはGd2 3 を0.005〜0.520重量部、
MnOをMnCO3 に換算して0.01〜0.30重量
部含有するとともに、Nb2 5 のMgOに対するモル
比が0.5〜2.2である。また、BaTiO3 100
重量部に対して、さらに少なくともSiO2 、Al2
3 のいずれか一種を0.05〜0.50重量部含有する
ことが望ましく、またZnOは0.5重量部以下含有す
ることが望ましい。
That is, the dielectric ceramic of the present invention is made of BaTiO 3.
3 Nb 2 O 5 0.8 to 2.5 with respect to 100 parts by weight
Parts by weight, 0.06 to 0.70 parts by weight of MgO, Pr 6 O
11 or Gd 2 O 3 0.005~0.520 parts,
MnO is contained in an amount of 0.01 to 0.30 parts by weight in terms of MnCO 3 , and the molar ratio of Nb 2 O 5 to MgO is 0.5 to 2.2. In addition, BaTiO 3 100
With respect to parts by weight, at least SiO 2 , Al 2 O
It is desirable to contain 0.05 to 0.50 parts by weight of any one of 3 and 0.5 parts by weight or less of ZnO.

【0010】本発明において、BaTiO3 100重量
部に対して、Nb2 5 を0.80〜2.5重量部含有
としたのは、0.80重量部未満では、誘電損失が悪化
し、温度特性、焼結性が悪く、また、2.5重量部を越
えると比誘電率が低下し、温度特性が大きく劣化してし
まうからである。Nb2 5 はBaTiO3 100重量
部に対して1.3〜2.0重量部含有することが望まし
い。
In the present invention, 0.80 to 2.5 parts by weight of Nb 2 O 5 is contained with respect to 100 parts by weight of BaTiO 3 because the dielectric loss is deteriorated when the content is less than 0.80 parts by weight. This is because the temperature characteristics and sinterability are poor, and when the amount exceeds 2.5 parts by weight, the relative dielectric constant decreases and the temperature characteristics deteriorate significantly. Nb 2 O 5 is preferably contained in an amount of 1.3 to 2.0 parts by weight based on 100 parts by weight of BaTiO 3 .

【0011】また、MgOを0.06〜0.70重量部
としたのは、0.06重量部未満では比誘電率及び絶縁
抵抗が低下し、温度特性が悪く粒成長し、誘電損失の電
圧依存性が大となってしまうからである。また、0.7
0重量部よりも多いと誘電率が低下し、絶縁抵抗も低下
するからである。MgOは0.1〜0.4重量部である
ことが望ましい。
Further, MgO is set to 0.06 to 0.70 parts by weight because when it is less than 0.06 parts by weight, the relative dielectric constant and the insulation resistance are lowered, the temperature characteristics are deteriorated, grain growth is caused, and the voltage of dielectric loss. This is because the dependency becomes large. Also, 0.7
This is because if the amount is more than 0 parts by weight, the dielectric constant decreases and the insulation resistance also decreases. MgO is preferably 0.1 to 0.4 parts by weight.

【0012】さらに、Pr6 11またはGd2 3
0.005〜0.520重量部としたのは、Pr6 11
またはGd2 3 が0.005重量部未満では、比誘電
率が低下し、焼結性が悪く、0.520重量部を越える
と温度特性が劣化するからである。Pr6 11またはG
2 3 は0.005〜0.2重量部であることが望ま
しい。
Further, the amount of Pr 6 O 11 or Gd 2 O 3 being 0.005 to 0.520 parts by weight means that Pr 6 O 11
Alternatively, if Gd 2 O 3 is less than 0.005 parts by weight, the relative dielectric constant is lowered and the sinterability is poor, and if it exceeds 0.520 parts by weight, the temperature characteristics are deteriorated. Pr 6 O 11 or G
It is desirable that d 2 O 3 is 0.005 to 0.2 part by weight.

【0013】またMnOをMnCO3 換算で0.01〜
0.30重量部としたのは0.01重量部未満では、絶
縁抵抗が低下し、誘電損失及び焼結性が悪化し、0.3
0重量部を越えると比誘電率が低下してしまうからであ
る。MnOはMnCO3 換算で0.04〜0.10重量
部であることが望ましい。
Further, MnO is converted to MnCO 3 in an amount of 0.01 to
The amount of 0.30 parts by weight is less than 0.01 parts by weight, the insulation resistance decreases, the dielectric loss and the sinterability deteriorate, and
This is because if the amount exceeds 0 parts by weight, the relative dielectric constant decreases. MnO is preferably 0.04 to 0.10 parts by weight in terms of MnCO 3 .

【0014】そして、Nb2 5 のMgOに対するモル
比を0.5〜2.2としたのは、モル比が0.5より小
さいと比誘電率が悪化し、温度特性、焼結性が悪く、ま
た2.2より大きいと、温度特性が悪く、比誘電率が低
下するからである。本発明では、Nb2 5 のMgOに
対するモル比を、特に、0.6〜1.4とすることが望
ましい。
The molar ratio of Nb 2 O 5 to MgO is set to 0.5 to 2.2. When the molar ratio is smaller than 0.5, the relative dielectric constant is deteriorated and the temperature characteristics and sinterability are improved. If it is worse than 2.2, the temperature characteristics are poor and the relative dielectric constant is lowered. In the present invention, the molar ratio of Nb 2 O 5 to MgO is particularly preferably set to 0.6 to 1.4.

【0015】また、BaTiO3 100重量部に対し
て、さらにSiO2 およびAl2 3のうち少なくとも
一種を0.05〜0.50重量部含有したのは、0.0
5重量部よりも少ない場合には比誘電率向上の効果、焼
結性向上の効果、電圧依存性向上の効果が殆どないから
であり、0.50重量部よりも大きいと比誘電率が低下
する傾向にあるからである。SiO2 およびAl2 3
のうち少なくとも一種は、BaTiO3 100重量部に
対して、0.1〜0.2重量部含有することが望まし
い。
Further, 0.05 to 0.50 parts by weight of at least one of SiO 2 and Al 2 O 3 is added to 100 parts by weight of BaTiO 3 , and the content is 0.0
This is because when the amount is less than 5 parts by weight, the effect of improving the relative permittivity, the effect of improving the sinterability, and the effect of improving the voltage dependency are hardly obtained, and when the amount is more than 0.50 part by weight, the relative permittivity decreases. This is because they tend to SiO 2 and Al 2 O 3
At least one of them is preferably contained in an amount of 0.1 to 0.2 parts by weight based on 100 parts by weight of BaTiO 3 .

【0016】さらに、BaTiO3 100重量部に対し
て、ZnOは0.5重量部以下であることが望ましい
が、これは、ZnOが0.5重量部よりも多い場合には
温度特性が悪く誘電損失が増加する傾向にあるからであ
る。ZnOは、BaTiO3 100重量部に対して0.
3重量部以下であることが望ましい。
Furthermore, it is desirable that the amount of ZnO be 0.5 parts by weight or less with respect to 100 parts by weight of BaTiO 3 , but this is because when ZnO is more than 0.5 parts by weight, the temperature characteristics are poor and the dielectric properties are low. This is because the loss tends to increase. ZnO is added to 100 parts by weight of BaTiO 3 .
It is preferably 3 parts by weight or less.

【0017】本発明に使用されるBaTiO3 は、例え
ば、固相法,ゾルゲル法,しゅう酸法,水熱合成法等い
ずれかの方法により生成された平均結晶粒径1.0μm
以下のBaTiO3 粉末を主成分として、このBaTi
3 100重量部に対して、Nb2 5 、MgO、Pr
6 11またはGd2 3 、MnCO3 、SiO2 、Al
2 3 、ZnO各粉末を所定量秤量し、ボールミル等に
て20〜48時間湿式粉砕し、乾燥後、バインダーを所
定量添加して、これを所定形状に成形し、大気中におい
て1230℃〜1300℃で1〜2時間焼成することに
より製造される。積層セラミックコンデンサを作製する
場合には、上記粉末をスラリー化し、これをドクターブ
レード法の手法によりシート状に成形し、そのシート状
成形体に適宜Ag−Pdなどの内部電極を塗布し、これ
らを複数枚積層し、上記焼成条件で同時焼成すれば良
い。
The BaTiO 3 used in the present invention is, for example, an average crystal grain size of 1.0 μm produced by any one of the solid phase method, sol-gel method, oxalic acid method, hydrothermal synthesis method and the like.
Based on the following BaTiO 3 powder as a main component, this BaTi
Nb 2 O 5 , MgO, Pr for 100 parts by weight of O 3
6 O 11 or Gd 2 O 3 , MnCO 3 , SiO 2 , Al
A predetermined amount of each of 2 O 3 and ZnO powder is weighed, wet-milled for 20 to 48 hours by a ball mill or the like, dried, and then a predetermined amount of a binder is added to form a predetermined shape, which is then heated to 1230 ° C. in the atmosphere. It is manufactured by firing at 1300 ° C. for 1 to 2 hours. In the case of producing a monolithic ceramic capacitor, the above powder is slurried, formed into a sheet by a doctor blade method, and an internal electrode such as Ag-Pd is appropriately applied to the sheet-shaped formed body, and these are formed. It suffices to stack a plurality of sheets and perform simultaneous firing under the above firing conditions.

【0018】本発明に使用されるNb2 5 、MgO、
Pr6 11またはGd2 3 、MnCO3 、SiO2
Al2 3 、ZnO各粉末の代わりに、Nb,Mg,P
rまたはGd,Mn,Si,Al,Znの水酸化物、炭
酸塩,硝酸塩、しゅう酸塩,アルコキシド等、焼結温度
以下で分解し、酸化物となるものも用いることができ
る。
Nb 2 O 5 , MgO, used in the present invention
Pr 6 O 11 or Gd 2 O 3 , MnCO 3 , SiO 2 ,
Instead of Al 2 O 3 and ZnO powders, Nb, Mg, P
It is also possible to use hydroxides, carbonates, nitrates, oxalates, alkoxides, etc. of r or Gd, Mn, Si, Al, Zn, which decompose into oxides at a temperature below the sintering temperature.

【0019】交流電圧依存性を向上するには、焼結体の
平均結晶粒径dをd<1.0μmに制御することが好ま
しい。このように、焼結体の平均結晶粒径dをd<1.
0μmに制御するには、出発原料として平均結晶粒径
1.0μm以下のチタン酸バリウム粉末を用いたり、長
時間湿式粉砕して粉砕後の粒径を0.8μm以下に管理
したり、焼成温度をなるべく低く設定し焼成時間も短時
間とする必要がある。
To improve the AC voltage dependency, it is preferable to control the average crystal grain size d of the sintered body to d <1.0 μm. In this way, the average crystal grain size d of the sintered body is d <1.
To control the particle size to 0 μm, barium titanate powder having an average crystal grain size of 1.0 μm or less is used as a starting material, or the grain size after pulverization is controlled to 0.8 μm or less by wet pulverization for a long time. Should be set as low as possible and the firing time should be short.

【0020】[0020]

【作用】本発明の誘電体磁器組成物では、静電容量の温
度特性が−55℃〜125℃の範囲において±15%以
内で、+25℃における比誘電率が2500以上とな
り、グリーンシートの厚みが15μmであっても誘電損
失が2.5%以下と小さく、交流電圧2000V/cmに
おける誘電損失が3%以下と小さい値を示すことができ
る。このため、小型で大容量の積層コンデンサーを得る
ことができる。
In the dielectric ceramic composition of the present invention, the temperature characteristic of capacitance is within ± 15% in the range of -55 ° C to 125 ° C, the relative dielectric constant at + 25 ° C is 2500 or more, and the thickness of the green sheet is Is 15 μm, the dielectric loss is as small as 2.5% or less, and the dielectric loss at an AC voltage of 2000 V / cm can be as small as 3% or less. Therefore, a small-sized and large-capacity multilayer capacitor can be obtained.

【0021】また、焼成温度が1300℃以下となるた
め工業的にも製造しやすく、かつ、内部電極に安価な銀
−パラジウム(Ag/Pd=20/80〜40/60)
を使用した積層コンデンサなどに使用できる誘電体磁器
が達成される。さらに、誘電体磁器として基本的な特性
である誘電損失が2.5%以下、絶縁抵抗(IR)が1
4 MΩ以上と充分に満足できる誘電体磁器が達成され
る。
Further, since the firing temperature is 1300 ° C. or less, it is easy to manufacture industrially, and the internal electrode is inexpensive silver-palladium (Ag / Pd = 20 / 80-40 / 60).
A dielectric porcelain that can be used for a multilayer capacitor using the is achieved. Furthermore, the dielectric loss, which is the basic characteristics of a dielectric ceramic, is 2.5% or less, and the insulation resistance (IR) is 1
A sufficiently satisfactory dielectric porcelain of 0 4 MΩ or more is achieved.

【0022】[0022]

【実施例】以下、本発明の実施例を詳細に説明する。EXAMPLES Examples of the present invention will be described in detail below.

【0023】しゅう酸法により生成された平均粒径1.
0μm以下のBaTiO3 粉末を主成分として、このB
aTiO3 100重量部に対して、Nb2 5 、Mg
O、Pr6 11、MnCO3 、SiO2 、Al2 3
ZnOの各粉末を表1に示すように秤量し、ボールミル
にて20〜48時間湿式粉砕した後、有機系粘結剤を添
加し、しかる後攪拌、ドクターブレード法で厚さ15μ
mのテープ状に成形した。このテープを130mm×1
00mmに裁断し、20枚重ね、積層体を作製する。
Average particle size produced by the oxalic acid method
Based on BaTiO 3 powder of 0 μm or less as the main component,
100 parts by weight of aTiO 3 , Nb 2 O 5 , Mg
O, Pr 6 O 11 , MnCO 3 , SiO 2 , Al 2 O 3 ,
Each powder of ZnO was weighed as shown in Table 1, wet-milled for 20 to 48 hours in a ball mill, and then an organic binder was added thereto, followed by stirring and a doctor blade method to obtain a thickness of 15 μm.
m was formed into a tape shape. This tape is 130mm x 1
It is cut into 00 mm and 20 sheets are piled up to produce a laminated body.

【0024】[0024]

【表1】 [Table 1]

【0025】尚、内部電極として、Ag−Pd系ペース
ト(Ag/Pd=30/70)を印刷した。この積層体
を3.2mm×1.6mmに裁断し、空気中にて123
0〜1330℃で2時間焼成した。さらに両端面に銀ペ
ーストによる電極を800℃、10分間焼き付けて、測
定用試料をとした。
As the internal electrodes, Ag-Pd type paste (Ag / Pd = 30/70) was printed. This laminated body was cut into 3.2 mm × 1.6 mm, and was cut in air 123
Baking was performed at 0 to 1330 ° C. for 2 hours. Further, electrodes made of silver paste were baked on both end faces at 800 ° C. for 10 minutes to prepare a measurement sample.

【0026】このような試料について、静電容量および
誘電損失を基準温度25℃、周波数1.0kHz、測定
電圧1.0Vrmsで測定した。また、容量の温度変化
率は、−55〜+125℃の範囲で測定し、+25℃に
おける容量を基準とした。さらに、絶縁抵抗は、直流電
圧25Vを1分間印加した時を測定した。比誘電率は静
電容量から逆算した。 焼結体の平均粒径は、走査型電
子顕微鏡にて焼結体表面を15000倍で観察し、ライ
ンインターセプト法にて500以上の粒子を測定し算出
した。さらに、周波数1kHzで2000Vrms/c
mの電圧を印加した時の誘電損失を測定した。以上の結
果を表2に示す。
The capacitance and the dielectric loss of such a sample were measured at a reference temperature of 25 ° C., a frequency of 1.0 kHz and a measurement voltage of 1.0 Vrms. The temperature change rate of the capacity was measured in the range of −55 to + 125 ° C., and the capacity at + 25 ° C. was used as a reference. Further, the insulation resistance was measured when a DC voltage of 25 V was applied for 1 minute. The relative permittivity was calculated back from the capacitance. The average particle size of the sintered body was calculated by observing the surface of the sintered body at a magnification of 15,000 with a scanning electron microscope and measuring 500 or more particles by the line intercept method. Furthermore, 2000 Vrms / c at a frequency of 1 kHz
The dielectric loss when a voltage of m was applied was measured. Table 2 shows the above results.

【0027】[0027]

【表2】 [Table 2]

【0028】本発明の範囲内の誘電体磁器はいずれも比
誘電率が2500以上と大きく、しかもEIA規格のX
7R特性(−55℃〜125℃の温度範囲で容量変化率
が±15%以内)を満足する。さらに、誘電損失tan
δが2.5%以下と小さく、交流電圧2000Vrms
/cm下でも3.0%以下の損失を示す。さらに絶縁抵
抗(IR)は104 MΩ以上を有する。
Any of the dielectric ceramics within the scope of the present invention has a large relative permittivity of 2500 or more, and moreover, it has an EIA standard of X.
7R characteristics (capacity change rate within ± 15% in the temperature range of −55 ° C. to 125 ° C.) are satisfied. Furthermore, the dielectric loss tan
δ is as small as 2.5% or less, AC voltage 2000 Vrms
A loss of 3.0% or less is shown even under / cm. Further, the insulation resistance (IR) is 10 4 MΩ or more.

【0029】表1において、試料番号1〜5は誘電体磁
器組成物の主成分となるBaTiO3 に添加するNb2
5 の添加量を0.7〜2.6重量部まで値を夫々変化
させた。この時、MgO、Pr6 11、及びMnCO3
の添加量を0.2重量部、0.2重量部、0.1重量部
にした。
In Table 1, sample numbers 1 to 5 are Nb 2 added to BaTiO 3 which is the main component of the dielectric ceramic composition.
The amount of O 5 added was varied from 0.7 to 2.6 parts by weight. At this time, MgO, Pr 6 O 11 , and MnCO 3
Were added to 0.2 parts by weight, 0.2 parts by weight, and 0.1 parts by weight.

【0030】試料番号1(Nb2 5 の添加量:0.7
重量部)では、比誘電率εrが3460と良品になるも
のの、誘電損失tanδが3.3%となってしまう。更
に、温度特性が−25%となってしまう。また、試料番
号2〜4(Nb2 5 の添加量:0.8〜2.5重量
部)では、比誘電率εrが2670〜3640となり、
誘電損失tanδが2.4%以下であり、温度特性が±
14%以内になり、交流電圧2000V/cm印加時の
tanδが2.8%以下で、絶縁抵抗(IR)も5〜9
×104 MΩと良品の範囲となる。即ち、比誘電率εr
が高く、温度特性に優れ、誘電損失tanδが小さく、
さらに誘電損失の交流電圧依存性が小さい誘電体磁器が
達成される。更に、試料番号5(Nb2 5 の添加量:
2.6重量部)では、比誘電率εが2290、温度特性
が−20%に悪化してしまう。従って、本発明において
はチタン酸バリウムBaTiO3 に添加するNb2 5
の重量は、チタン酸バリウムBaTiO3 100重量部
に対して、0.8〜2.5重量部の範囲とした。
Sample No. 1 (addition amount of Nb 2 O 5 : 0.7
In parts by weight), the relative dielectric constant εr is 3460, which is a good product, but the dielectric loss tan δ is 3.3%. Further, the temperature characteristic becomes -25%. Further, in the sample numbers 2 to 4 (addition amount of Nb 2 O 5 : 0.8 to 2.5 parts by weight), the relative dielectric constant εr becomes 2670 to 3640,
Dielectric loss tan δ is less than 2.4% and temperature characteristics are ±
Within 14%, tan δ when an AC voltage of 2000 V / cm is applied is 2.8% or less, and the insulation resistance (IR) is 5 to 9
The range is × 10 4 MΩ, which is a good product. That is, the relative permittivity εr
High, excellent temperature characteristics, small dielectric loss tan δ,
Further, a dielectric ceramic having a small dielectric loss AC voltage dependency is achieved. Further, Sample No. 5 (addition amount of Nb 2 O 5 :
(2.6 parts by weight), the relative permittivity ε is 2290 and the temperature characteristics are deteriorated to -20%. Therefore, in the present invention, Nb 2 O 5 added to barium titanate BaTiO 3 is used.
The weight was set to a range of 0.8 to 2.5 parts by weight with respect to 100 parts by weight of barium titanate BaTiO 3 .

【0031】試料番号6〜10は誘電体磁器組成物の主
成分となるBaTiO3 に添加するMgOの添加量を
0.05〜0.75重量部まで値を夫々変化させた。こ
の時、Nb2 5 の添加量を0.8〜2.5重量部、P
6 11、及びMnCO3 の添加量をそれぞれ0.2重
量部、0.1重量部にした。
In Sample Nos. 6 to 10, the addition amount of MgO added to BaTiO 3 which is the main component of the dielectric ceramic composition was changed to 0.05 to 0.75 parts by weight. At this time, the amount of Nb 2 O 5 added is 0.8 to 2.5 parts by weight, P
The amounts of r 6 O 11 and MnCO 3 added were 0.2 parts by weight and 0.1 parts by weight, respectively.

【0032】試料番号6(MgOの添加量:0.05重
量部)では、交流電圧2000V/cm印加時のtan
δが4.0%になってしまう。また、試料番号7〜9
(MgOの添加量:0.06〜0.70重量部)では、
比誘電率εrが2660〜3050となり、誘電損失t
anσが2.1%以下であり、温度特性が±13%以内
になり、交流電圧2000V/cm印加時のtanσが
2.7%以下で、絶縁抵抗(IR)も3〜8×104
Ωと良品の範囲となる。即ち、比誘電率εrが高く、温
度特性に優れ、誘電損失tanδが小さく、さらに誘電
損失の交流電圧依存性が小さい誘電体磁器が達成され
る。更に、試料番号10(MgOの添加量:0.75重
量部)では、誘電損失tanδが1.7%と良品の範囲
となるものの、比誘電率εrが2150となってしま
う。従って、本発明においてはチタン酸バリウムBaT
iO3 に添加するMgO重量は、チタン酸バルウムBa
TiO3100重量部に対して、0.06〜0.70重
量部の範囲とした。試料番号11〜15は誘電体磁器組
成物の主成分となるBaTiO3 に添加するPr6 11
の添加量を0.004〜0.53重量部まで値を夫々変
化させた。
For sample No. 6 (amount of MgO added: 0.05 parts by weight), tan was applied when an AC voltage of 2000 V / cm was applied.
δ becomes 4.0%. In addition, sample numbers 7 to 9
(In the addition amount of MgO: 0.06 to 0.70 parts by weight),
The relative permittivity εr becomes 2660 to 3050, and the dielectric loss t
an σ is 2.1% or less, temperature characteristics are within ± 13%, tan σ is 2.7% or less when an AC voltage of 2000 V / cm is applied, and insulation resistance (IR) is also 3 to 8 × 10 4 M
Ω and good product range. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, in the sample No. 10 (amount of MgO added: 0.75 parts by weight), the dielectric loss tan δ is 1.7%, which is in the range of good products, but the relative permittivity εr is 2150. Therefore, in the present invention, barium titanate BaT
The weight of MgO added to iO 3 is barium titanate Ba.
The range was 0.06 to 0.70 parts by weight with respect to 100 parts by weight of TiO 3 . Sample Nos. 11 to 15 are Pr 6 O 11 added to BaTiO 3 which is the main component of the dielectric ceramic composition.
The value was changed from 0.004 to 0.53 parts by weight.

【0033】この時、Nb2 5 、MgO及びMnCO
3 の添加量をそれぞれ1.8重量部、0.3重量部、
0.1重量部にした。
At this time, Nb 2 O 5 , MgO and MnCO
The addition amounts of 3 are 1.8 parts by weight, 0.3 parts by weight,
It was set to 0.1 parts by weight.

【0034】試料番号11(Pr6 11の添加量:0.
004重量部)では、誘電損失tanδが2.5%とな
るものの、比誘電率εrが2410と低くなってしま
う。また、試料番号12〜14(Pr6 11の添加量:
0.005〜0.52重量部)では、比誘電率εrが2
760〜3560となり、誘電損失tanδが2.0%
以下であり、温度特性が±11%以内になり、交流電圧
2000V/cm印加時のtanδが2.9%以下で、
絶縁抵抗(IR)も5〜7×104 MΩと良品の範囲と
なる。即ち、比誘電率εrが高く、温度特性に優れ、誘
電損失tanσが小さく、さらに誘電損失の交流電圧依
存性が小さい誘電体磁器が達成される。更に、試料番号
15(Pr6 11の添加量:0.53重量部)では、比
誘電率εrが3750、誘電損失tanδが1.8%と
良品の範囲となるものの、温度特性が−22%に悪化し
てしまう。従って、本発明においてはチタン酸バリウム
BaTiO3 に添加するPr6 11の重量は、チタン酸
バルウムBaTiO3 100重量部に対して、0.00
5〜0.52重量部の範囲とした。
Sample No. 11 (Amount of Pr 6 O 11 added: 0.
004 parts by weight), the dielectric loss tan δ becomes 2.5%, but the relative dielectric constant εr becomes as low as 2410. Sample numbers 12 to 14 (amount of Pr 6 O 11 added:
0.005 to 0.52 parts by weight), the relative permittivity εr is 2
760 to 3560 and the dielectric loss tan δ is 2.0%
The temperature characteristic is within ± 11%, and the tan δ at the time of applying an AC voltage of 2000 V / cm is 2.9% or less,
The insulation resistance (IR) is 5 to 7 × 10 4 MΩ, which is in the range of good products. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan σ, and a small AC voltage dependency of the dielectric loss is achieved. Further, in the sample No. 15 (amount of Pr 6 O 11 added: 0.53 parts by weight), the relative dielectric constant εr was 3750 and the dielectric loss tan δ was 1.8%, which was in the range of good products, but the temperature characteristic was −22. It gets worse to%. Thus, the weight of Pr 6 O 11 added to the barium titanate BaTiO 3 in the present invention is to provide Baruumu BaTiO 3 100 parts by weight titanate, 0.00
The range was 5 to 0.52 parts by weight.

【0035】試料番号16〜20は誘電体磁器組成物の
主成分となるBaTiO3 に添加するMnCO3 の添加
量を0.005〜0.40重量部まで値を夫々変化させ
た。
In Sample Nos. 16 to 20, the amount of MnCO 3 added to BaTiO 3 which is the main component of the dielectric ceramic composition was changed to 0.005 to 0.40 parts by weight.

【0036】この時、Nb2 5 、MgO及びPr6
11の添加量を1.8重量部、0.3重量部、0.2重量
部にした。
At this time, Nb 2 O 5 , MgO and Pr 6 O
The amounts of 11 added were 1.8 parts by weight, 0.3 parts by weight, and 0.2 parts by weight.

【0037】試料番号16(MnCO3 の添加量:0.
005重量部)では、比誘電率εrが2960となるも
のの、誘電損失tanδが2.6%となってしまう。さ
らに絶縁抵抗が8×103 となる。また、試料番号17
〜19(MnCO3 の添加量:0.01〜0.3重量
部)では、比誘電率εrが2640〜2920となり、
誘電損失tanδが2.2%以下であり、温度特性が±
6%以内になり、交流電圧2000V/cm印加時のt
anδが3.0%以下で、絶縁抵抗(IR)も3×10
4 〜1×105 MΩと良品の範囲となる。即ち、比誘電
率εrが高く、温度特性に優れ、誘電損失tanδが小
さく、さらに誘電損失の交流電圧依存性が小さい誘電体
磁器が達成される。更に、試料番号20(MnCO3
添加量:0.40重量部)では、誘電損失tanδが
1.5%と良品の範囲となるものの、比誘電率εrが2
190と低くなってしまう。従って、本発明においては
チタン酸バリウムBaTiO3 に添加するMnCO3
重量は、チタン酸バルウムBaTiO3 100重量部に
対して、0.01〜0.3重量部の範囲とした。
Sample No. 16 (Amount of MnCO 3 added: 0.
005 parts by weight), the relative dielectric constant εr is 2960, but the dielectric loss tan δ is 2.6%. Furthermore, the insulation resistance becomes 8 × 10 3 . In addition, sample number 17
-19 (addition amount of MnCO 3: 0.01 to 0.3 parts by weight), the relative dielectric constant εr is next 2640-2920,
Dielectric loss tan δ is 2.2% or less, and temperature characteristics are ±
Within 6%, t when AC voltage 2000 V / cm is applied
An δ of 3.0% or less, insulation resistance (IR) of 3 × 10
It is in the range of 4 to 1 × 10 5 MΩ, which is a good product. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, in sample No. 20 (amount of MnCO 3 added: 0.40 parts by weight), the dielectric loss tan δ was 1.5%, which was in the range of good products, but the relative dielectric constant εr was 2
It will be as low as 190. Thus, the weight of MnCO 3 added to the barium titanate BaTiO 3 in the present invention is to provide Baruumu BaTiO 3 100 parts by weight titanate, ranged from 0.01 to 0.3 parts by weight.

【0038】試料番号21〜29はNb2 5 のMgO
に対する比を0.4〜2.3に変化させた。比が0.4
と小さい場合、また2.3と大きい場合いずれも、比誘
電率が2310、2130と2500より低く、また温
度特性もはずれてしまう。これに対し、比が0.5〜
2.2の場合、誘電率が2500以上であり温度特性そ
の他の特性も満足される。 実施例2 表1の試料No.13の組成に、SiO2 ,Al2 3
ZnO粉末を、表3に示すように添加含有させ、実施例
1と同様に、テープ状に成形した後、このテープを積層
し、内部電極を形成し、積層体を作製した。そして、実
施例1と同様に、各特性を測定し、表4に記した。
Sample Nos. 21 to 29 are MgO of Nb 2 O 5
Was varied from 0.4 to 2.3. Ratio 0.4
In both cases, the relative permittivity is lower than 2310, 2130 and 2500, and the temperature characteristics are also deviated. On the other hand, the ratio is 0.5-
In the case of 2.2, the dielectric constant is 2500 or more and the temperature characteristics and other characteristics are also satisfied. Example 2 In the composition of sample No. 13 in Table 1, SiO 2 , Al 2 O 3 ,
ZnO powder was added and contained as shown in Table 3 and formed into a tape shape in the same manner as in Example 1, and then the tape was laminated to form internal electrodes to prepare a laminated body. Then, each characteristic was measured in the same manner as in Example 1 and is shown in Table 4.

【0039】尚、試料の組成は、BaTiO3 100重
量部に対して、Nb2 5 を1.8重量部、MgOを
0.3重量部、Pr6 11を0.2重量部、MnOをM
nCO3 換算で0.1重量部含有し、SiO2 ,Al2
3 ,ZnOをBaTiO3 100重量部に対して所定
量含有するものである。
The composition of the sample was as follows: 1.8 parts by weight of Nb 2 O 5 , 0.3 parts by weight of MgO, 0.2 parts by weight of Pr 6 O 11 , and MnO per 100 parts by weight of BaTiO 3. To M
Containing 0.1 parts by weight in terms of nCO 3 , SiO 2 , Al 2
A predetermined amount of O 3 and ZnO is contained with respect to 100 parts by weight of BaTiO 3 .

【0040】[0040]

【表3】 [Table 3]

【0041】[0041]

【表4】 [Table 4]

【0042】これらの表3,4から、SiO2 ,Al2
3 ,ZnOを含有することにより、これらの化合物を
含有しない場合(試料No.13)よりも焼成温度が低下
し、誘電率が高くなることが判る。
From these Tables 3 and 4, SiO 2 , Al 2
It can be seen that the inclusion of O 3 and ZnO results in a lower firing temperature and a higher dielectric constant than in the case where these compounds are not included (Sample No. 13).

【0043】実施例3 しゅう酸法により生成された平均粒径1.0μm以下の
BaTiO3 粉末を主成分として、このBaTiO3
00重量部に対して、Nb2 5 、MgO、Gd
2 3 、MnCO3 の各粉末を表5に示すように秤量
し、ボールミルにて20〜48時間湿式粉砕した後、有
機系粘結剤を添加し、しかる後攪拌、ドクターブレード
法で厚さ15μmのテープ状に成形した。このテープを
130mm×100mmに裁断し、20枚重ね、積層体
を作製する。
Example 3 BaTiO 3 powder having an average particle size of 1.0 μm or less produced by the oxalic acid method was used as a main component, and this BaTiO 3 1
Nb 2 O 5 , MgO, Gd for 100 parts by weight
Each powder of 2 O 3 and MnCO 3 was weighed as shown in Table 5, wet-milled in a ball mill for 20 to 48 hours, then an organic binder was added, and then the mixture was stirred and the thickness was measured by a doctor blade method. It was molded into a tape shape of 15 μm. This tape is cut into a size of 130 mm × 100 mm and 20 sheets are stacked to produce a laminated body.

【0044】[0044]

【表5】 [Table 5]

【0045】尚、内部電極として、Ag−Pd系ペース
ト(Ag/Pd=30/70)を印刷した。この積層体
を3.2mm×1.6mmに裁断し、空気中にて124
0〜1320℃で2時間焼成した。さらに両端面に銀ペ
ーストによる電極を800℃、10分間焼き付けて、測
定用試料をとした。
As the internal electrodes, Ag-Pd type paste (Ag / Pd = 30/70) was printed. This laminated body was cut into 3.2 mm × 1.6 mm, and was cut in air to 124 mm.
It was baked at 0 to 1320 ° C. for 2 hours. Further, electrodes made of silver paste were baked on both end faces at 800 ° C. for 10 minutes to prepare a measurement sample.

【0046】このような形成された試料について、静電
容量および誘電損失を基準温度25℃、周波数1.0k
Hz、測定電圧1.0Vrmsで測定した。また、容量
の温度変化率は、−55〜+125℃の範囲で測定し、
+25℃における容量を基準とした。さらに、絶縁抵抗
は、直流電圧25Vを1分間印加した時を測定した。
The capacitance and the dielectric loss of the sample thus formed were measured at a reference temperature of 25 ° C. and a frequency of 1.0 k.
It was measured at Hz and a measurement voltage of 1.0 Vrms. The temperature change rate of the capacity is measured in the range of −55 to + 125 ° C.,
The capacity at + 25 ° C was used as a standard. Further, the insulation resistance was measured when a DC voltage of 25 V was applied for 1 minute.

【0047】比誘電率は静電容量から逆算した。焼結体
の平均粒径は、走査型電子顕微鏡にて焼結体表面を15
000倍で観察し、ラインインターセプト法にて500
以上の粒子を測定し算出した。さらに、周波数1kHz
で2000Vrms/cmの電圧を印加した時の誘電損
失を測定した。以上の結果を表6に示す。
The relative permittivity was calculated back from the capacitance. The average particle size of the sintered body is 15 on the surface of the sintered body with a scanning electron microscope.
Observe at 000 times and 500 by line intercept method.
The above particles were measured and calculated. Furthermore, frequency 1 kHz
The dielectric loss when a voltage of 2000 Vrms / cm was applied was measured. The above results are shown in Table 6.

【0048】[0048]

【表6】 [Table 6]

【0049】本発明の範囲内の誘電体磁器はいずれも比
誘電率が2500以上と大きく、しかもEIA規格のX
7R特性(−55℃〜125℃の温度範囲で容量変化率
が±15%以内)を満足する。さらに、誘電損失tan
δが2.5%以下と小さく、交流電圧2000Vrms
/cm下でも3.0%以下の損失を示す。さらに絶縁抵
抗(IR)は104 MΩ以上を有する。
Any of the dielectric ceramics within the scope of the present invention has a large relative permittivity of 2500 or more, and moreover, it has an EIA standard of X.
7R characteristics (capacity change rate within ± 15% in the temperature range of −55 ° C. to 125 ° C.) are satisfied. Furthermore, the dielectric loss tan
δ is as small as 2.5% or less, AC voltage 2000 Vrms
A loss of 3.0% or less is shown even under / cm. Further, the insulation resistance (IR) is 10 4 MΩ or more.

【0050】表5において、試料番号44〜48は誘電
体磁器組成物の主成分となるBaTiO3 に添加するN
2 5 の添加量を0.7〜2.6重量部まで値を夫々
変化させた。この時、MgO、Gd2 3 、及びMnC
3 の添加量を0.2重量部、0.2重量部、0.1重
量部にした。
In Table 5, sample numbers 44 to 48 are N added to BaTiO 3 which is the main component of the dielectric ceramic composition.
The amount of b 2 O 5 added was varied from 0.7 to 2.6 parts by weight. At this time, MgO, Gd 2 O 3 , and MnC
The amounts of O 3 added were 0.2 parts by weight, 0.2 parts by weight, and 0.1 parts by weight.

【0051】試料番号44(Nb2 5 の添加量:0.
7重量部)では、比誘電率εrが3530と良品になる
ものの、誘電損失tanδが3.0%となってしまう。
更に、温度特性が−22%となってしまう。また、試料
番号45〜47(Nb2 5の添加量:0.8〜2.5
重量部)では、比誘電率εrが2720〜3710とな
り、誘電損失tanδが2.2%以下であり、温度特性
が±13%以内になり、交流電圧2000V/cm印加
時のtanδが2.7%以下で、絶縁抵抗(IR)も6
〜9×104 MΩと良品の範囲となる。即ち、比誘電率
εrが高く、温度特性に優れ、誘電損失tanδが小さ
く、さらに誘電損失の交流電圧依存性が小さい誘電体磁
器が達成される。更に、試料番号48(Nb2 5 の添
加量:2.6重量部)では、比誘電率εが2330、温
度特性が−18%に悪化してしまう。従って、本発明に
おいてはチタン酸バリウムBaTiO3 に添加するNb
25 の重量は、チタン酸バリウムBaTiO3 100
重量部に対して、0.8〜2.5重量部の範囲とした。
Sample No. 44 (Amount of Nb 2 O 5 added: 0.
7 parts by weight), the relative dielectric constant εr was 3530, which was a good product, but the dielectric loss tan δ was 3.0%.
Further, the temperature characteristic becomes -22%. In addition, sample numbers 45 to 47 (addition amount of Nb 2 O 5 : 0.8 to 2.5
(Parts by weight), the relative permittivity εr is 2720 to 3710, the dielectric loss tan δ is 2.2% or less, the temperature characteristic is within ± 13%, and the tan δ when an AC voltage of 2000 V / cm is applied is 2.7. % Or less, insulation resistance (IR) is also 6
It is in the range of good products, up to 9 × 10 4 MΩ. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, in the sample No. 48 (addition amount of Nb 2 O 5 : 2.6 parts by weight), the relative permittivity ε is 2330 and the temperature characteristic is deteriorated to −18%. Therefore, in the present invention, Nb added to barium titanate BaTiO 3 is used.
The weight of 2 O 5 is barium titanate BaTiO 3 100.
The range was 0.8 to 2.5 parts by weight with respect to parts by weight.

【0052】試料番号49〜53は誘電体磁器組成物の
主成分となるBaTiO3 に添加するMgOの添加量を
0.05〜0.75重量部まで値を夫々変化させた。こ
の時、Nb2 5 の添加量を0.8〜2.5重量部、G
2 3 及びMnCO3 の添加量をそれぞれ0.2重量
部、0.1重量部にした。
For sample numbers 49 to 53, the amount of MgO added to BaTiO 3 which is the main component of the dielectric ceramic composition was varied from 0.05 to 0.75 parts by weight. At this time, the amount of Nb 2 O 5 added is 0.8 to 2.5 parts by weight, G
The amounts of d 2 O 3 and MnCO 3 added were 0.2 parts by weight and 0.1 parts by weight, respectively.

【0053】試料番号49(MgOの添加量:0.05
重量部)では、交流電圧2000V/cm印加時のta
nδが4.0%になってしまう。また、試料番号50〜
52(MgOの添加量:0.06〜0.70重量部)で
は、比誘電率εrが2710〜3110となり、誘電損
失tanσが2.0%以下であり、温度特性が±12%
以内になり、交流電圧2000V/cm印加時のtan
σが2.6%以下で、絶縁抵抗(IR)も5〜8×10
4 MΩと良品の範囲となる。即ち、比誘電率εrが高
く、温度特性に優れ、誘電損失tanδが小さく、さら
に誘電損失の交流電圧依存性が小さい誘電体磁器が達成
される。更に、試料番号53(MgOの添加量:0.7
5重量部)では、誘電損失tanδが1.6%と良品の
範囲となるものの、比誘電率εrが2190となってし
まう。従って、本発明においてはチタン酸バリウムBa
TiO3 に添加するMgO重量は、チタン酸バルウムB
aTiO3 100重量部に対して、0.06〜0.70
重量部の範囲とした。試料番号54〜58は誘電体磁器
組成物の主成分となるBaTiO3 に添加するGd2
3 の添加量を0.004〜0.53重量部まで値を夫々
変化させた。
Sample No. 49 (Amount of MgO added: 0.05
(Parts by weight) is ta when an AC voltage of 2000 V / cm is applied.
nδ will be 4.0%. Also, sample number 50-
52 (MgO addition amount: 0.06 to 0.70 parts by weight), the relative dielectric constant εr was 2710 to 3110, the dielectric loss tan σ was 2.0% or less, and the temperature characteristic was ± 12%.
Within, the tan when an AC voltage of 2000 V / cm was applied
σ is 2.6% or less, and insulation resistance (IR) is also 5 to 8 × 10.
The range is 4 MΩ and good products. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, Sample No. 53 (MgO addition amount: 0.7
5 parts by weight), the dielectric loss tan δ is 1.6%, which is in the range of good products, but the relative permittivity εr is 2190. Therefore, in the present invention, barium titanate Ba
The weight of MgO added to TiO 3 is barium titanate B
0.06 to 0.70 with respect to 100 parts by weight of aTiO 3.
The range was parts by weight. Sample Nos. 54 to 58 are Gd 2 O added to BaTiO 3 which is the main component of the dielectric ceramic composition.
The addition amount of 3 was changed from 0.004 to 0.53 parts by weight.

【0054】この時、Nb2 5 、MgO及びMnCO
3 の添加量をそれぞれ1.8重量部、0.3重量部、
0.1重量部にした。
At this time, Nb 2 O 5 , MgO and MnCO
The addition amounts of 3 are 1.8 parts by weight, 0.3 parts by weight,
It was set to 0.1 parts by weight.

【0055】試料番号54(Gd2 3 の添加量:0.
004重量部)では、誘電損失tanδが2.3%とな
るものの、比誘電率εrが2440と低くなってしま
う。また、試料番号55〜57(Gd2 3 の添加量:
0.005〜0.52重量部)では、比誘電率εrが2
820〜3630となり、誘電損失tanδが1.9%
以下であり、温度特性が±10%以内になり、交流電圧
2000V/cm印加時のtanδが2.8%以下で、
絶縁抵抗(IR)も5〜7×104 MΩと良品の範囲と
なる。即ち、比誘電率εrが高く、温度特性に優れ、誘
電損失tanσが小さく、さらに誘電損失の交流電圧依
存性が小さい誘電体磁器が達成される。更に、試料番号
58(Gd2 3 の添加量:0.53重量部)では、比
誘電率εrが3820、誘電損失tanδが1.7%と
良品の範囲となるものの、温度特性が−20%に悪化し
てしまう。従って、本発明においてはチタン酸バリウム
BaTiO3 に添加するGd2 3 の重量は、チタン酸
バルウムBaTiO3 100重量部に対して、0.00
5〜0.52重量部の範囲とした。
Sample No. 54 (Amount of Gd 2 O 3 added: 0.
004 parts by weight), the dielectric loss tan δ becomes 2.3%, but the relative dielectric constant εr becomes as low as 2440. In addition, sample numbers 55 to 57 (amount of Gd 2 O 3 added:
0.005 to 0.52 parts by weight), the relative permittivity εr is 2
820 to 3630, and the dielectric loss tan δ is 1.9%
Below, the temperature characteristics are within ± 10%, and the tan δ when an AC voltage of 2000 V / cm is applied is 2.8% or less,
The insulation resistance (IR) is 5 to 7 × 10 4 MΩ, which is in the range of good products. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan σ, and a small AC voltage dependency of the dielectric loss is achieved. Further, in the sample No. 58 (amount of Gd 2 O 3 added: 0.53 parts by weight), the relative dielectric constant εr was 3820 and the dielectric loss tan δ was 1.7%, which was in the range of good products, but the temperature characteristic was −20. It gets worse to%. Thus, the weight of Gd 2 O 3 to be added to the barium titanate BaTiO 3 in the present invention is to provide Baruumu BaTiO 3 100 parts by weight titanate, 0.00
The range was 5 to 0.52 parts by weight.

【0056】試料番号59〜63は誘電体磁器組成物の
主成分となるBaTiO3 に添加するMnCO3 の添加
量を0.005〜0.40重量部まで値を夫々変化させ
た。
In sample numbers 59 to 63, the amount of MnCO 3 added to BaTiO 3 which is the main component of the dielectric ceramic composition was changed to 0.005 to 0.40 parts by weight.

【0057】この時、Nb2 5 、MgO及びGd2
3 の添加量を1.8重量部、0.3重量部、0.2重量
部にした。
At this time, Nb 2 O 5 , MgO and Gd 2 O
The addition amount of 3 was 1.8 parts by weight, 0.3 parts by weight, and 0.2 parts by weight.

【0058】試料番号59(MnCO3 の添加量:0.
005重量部)では、比誘電率εrが3020となるも
のの、誘電損失tanδが2.6%となってしまう。さ
らに絶縁抵抗が8×103 となる。また、試料番号60
〜62(MnCO3 の添加量:0.01〜0.3重量
部)では、比誘電率εrが2640〜2970となり、
誘電損失tanδが2.2%以下であり、温度特性が±
8%以内になり、交流電圧2000V/cm印加時のt
anδが2.9%以下で、絶縁抵抗(IR)も5×10
4 〜1×105 MΩと良品の範囲となる。即ち、比誘電
率εrが高く、温度特性に優れ、誘電損失tanδが小
さく、さらに誘電損失の交流電圧依存性が小さい誘電体
磁器が達成される。更に、試料番号63(MnCO3
添加量:0.40重量部)では、誘電損失tanδが
1.5%と良品の範囲となるものの、比誘電率εrが2
230と低くなってしまう。従って、本発明においては
チタン酸バリウムBaTiO3 に添加するMnCO3
重量は、チタン酸バルウムBaTiO3 100重量部に
対して、0.01〜0.3重量部の範囲とした。
Sample No. 59 (Amount of MnCO 3 added: 0.
005 parts by weight), the relative dielectric constant εr is 3020, but the dielectric loss tan δ is 2.6%. Furthermore, the insulation resistance becomes 8 × 10 3 . Also, sample number 60
To 62 (addition amount of MnCO 3: 0.01 to 0.3 parts by weight), the relative dielectric constant εr is next from 2640 to 2970,
Dielectric loss tan δ is 2.2% or less, and temperature characteristics are ±
Within 8%, t when an AC voltage of 2000 V / cm is applied
An δ of 2.9% or less, insulation resistance (IR) of 5 × 10
It is in the range of 4 to 1 × 10 5 MΩ, which is a good product. That is, a dielectric ceramic having a high relative permittivity εr, excellent temperature characteristics, a small dielectric loss tan δ, and a small AC voltage dependency of the dielectric loss can be achieved. Further, in the sample No. 63 (amount of MnCO 3 added: 0.40 parts by weight), the dielectric loss tan δ is 1.5%, which is in the range of good products, but the relative dielectric constant εr is 2
It will be as low as 230. Thus, the weight of MnCO 3 added to the barium titanate BaTiO 3 in the present invention is to provide Baruumu BaTiO 3 100 parts by weight titanate, ranged from 0.01 to 0.3 parts by weight.

【0059】試料番号64〜72はNb2 5 のMgO
に対する比を0.4〜2.3に変化させた。比が0.4
と小さい場合、また2.3と大きい場合いずれも、誘電
率が2350、2170と2500より低く、また温度
特性もはずれてしまう。これに対し、比が0.5〜2.
2場合、誘電率が2500以上であり温度特性その他の
特性も満足される。 実施例4 表5の試料No.56の組成に、SiO2 ,Al2 3
ZnO粉末を、表7に示すように添加含有させ、実施例
3と同様に、テープ状に成形した後、このテープを積層
し、内部電極を形成し、積層体を作製した。そして、実
施例3と同様に、各特性を測定し、表8に記した。
Sample Nos. 64 to 72 are MgO of Nb 2 O 5
Was varied from 0.4 to 2.3. Ratio 0.4
In both cases, the dielectric constants are lower than 2350, 2170 and 2500, and the temperature characteristics are also deviated. On the other hand, the ratio is 0.5-2.
In the case of 2, the dielectric constant is 2500 or more, and the temperature characteristics and other characteristics are also satisfied. Example 4 The composition of sample No. 56 in Table 5 was changed to SiO 2 , Al 2 O 3 ,
ZnO powder was added and contained as shown in Table 7 and formed into a tape shape in the same manner as in Example 3, and then the tape was laminated to form internal electrodes to prepare a laminated body. Then, each property was measured in the same manner as in Example 3 and is shown in Table 8.

【0060】尚、試料の組成は、BaTiO3 100重
量部に対して、Nb2 5 を1.8重量部、MgOを
0.3重量部、Gd2 3 0.2重量部、MnOをMn
CO3換算で0.1重量部含有し、SiO2 ,Al2
3 ,ZnOをBaTiO3 100重量部に対して所定量
含有するものである。
The composition of the sample was 1.8 parts by weight of Nb 2 O 5 , 0.3 parts by weight of MgO, 0.2 parts by weight of Gd 2 O 3 and 100 parts by weight of MnO with respect to 100 parts by weight of BaTiO 3. Mn
Containing 0.1 parts by weight in terms of CO 3 , SiO 2 , Al 2 O
3 , ZnO is contained in a predetermined amount with respect to 100 parts by weight of BaTiO 3 .

【0061】[0061]

【表7】 [Table 7]

【0062】[0062]

【表8】 [Table 8]

【0063】これらの表7,8から、SiO2 ,Al2
3 ,ZnOを含有することにより、これらの化合物を
含有しない場合(試料No.56)よりも焼成温度が低下
し、誘電率が高くなることが判る。
From these Tables 7 and 8, SiO 2 , Al 2
It can be seen that the inclusion of O 3 and ZnO results in a lower firing temperature and a higher dielectric constant than in the case where these compounds are not included (Sample No. 56).

【0064】[0064]

【発明の効果】以上のように、本発明によれば、X7R
特性を満足し、比誘電率εrが2500以上で、且つ焼
成温度が1300℃以下となる。またその他の諸特性と
して、誘電損失tanδが2.5%以下絶縁抵抗(I
R)が104 MΩ以上、交流電圧2000V/cm印加
時のtanδが3%以下の誘電体磁器組成物を得ること
ができる。
As described above, according to the present invention, X7R
The characteristics are satisfied, the relative dielectric constant εr is 2500 or more, and the firing temperature is 1300 ° C. or less. As other characteristics, the dielectric loss tan δ is 2.5% or less, the insulation resistance (I
It is possible to obtain a dielectric ceramic composition in which R) is 10 4 MΩ or more and tan δ is 3% or less when an AC voltage of 2000 V / cm is applied.

【0065】これにより、例えば積層セラミックコンデ
ンサを上述の誘電体磁器組成物で構成した場合、温度特
性に優れた小型・大容量のコンデンサを得ることがで
き、焼成温度が1300℃以下となり、積層されたシー
ト間に内部電極として、安価な銀−パラジウムを使用す
ることも可能で、安価な積層セラミックコンデンサを得
ることができる。
Thus, for example, when a monolithic ceramic capacitor is formed of the above-mentioned dielectric ceramic composition, a small-sized and large-capacity capacitor having excellent temperature characteristics can be obtained, and the firing temperature becomes 1300 ° C. or lower, and the capacitors are laminated. It is also possible to use inexpensive silver-palladium as an internal electrode between the sheets, and an inexpensive monolithic ceramic capacitor can be obtained.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】BaTiO3 100重量部に対して、Nb
2 5 を0.80〜2.5重量部、MgOを0.06〜
0.70重量部、Pr6 11またはGd2 3を0.0
05〜0.520重量部、MnOをMnCO3 に換算し
て0.01〜0.30重量部含有するとともに、Nb2
5 のMgOに対するモル比が0.5〜2.2の範囲内
にあることを特徴とする誘電体磁器組成物。
1. Nb based on 100 parts by weight of BaTiO 3.
2 O 5 0.80 to 2.5 parts by weight, MgO 0.06 to
0.70 parts by weight of Pr 6 O 11 or Gd 2 O 3 of 0.0
05 to 0.520 parts by weight, 0.01 to 0.30 parts by weight of MnO converted to MnCO 3 , and Nb 2
A dielectric ceramic composition characterized in that the molar ratio of O 5 to MgO is in the range of 0.5 to 2.2.
【請求項2】BaTiO3 100重量部に対して、さら
にSiO2 およびAl2 3 のうち少なくとも一種を
0.05〜0.50重量部含有することを特徴とする請
求項1記載の誘電体磁器組成物。
2. The dielectric according to claim 1, further comprising 0.05 to 0.50 parts by weight of at least one of SiO 2 and Al 2 O 3 with respect to 100 parts by weight of BaTiO 3. Porcelain composition.
【請求項3】BaTiO3 100重量部に対して、Zn
Oを0.5重量部以下含有することを特徴とする請求項
1または2記載の誘電体磁器組成物。
3. Zn based on 100 parts by weight of BaTiO 3
The dielectric porcelain composition according to claim 1 or 2, wherein O is contained in an amount of 0.5 part by weight or less.
JP29303094A 1994-01-28 1994-11-28 Dielectric porcelain composition Expired - Fee Related JP3250923B2 (en)

Priority Applications (2)

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JP29303094A JP3250923B2 (en) 1994-11-28 1994-11-28 Dielectric porcelain composition
US08/545,459 US5650367A (en) 1994-01-28 1995-10-19 Dielectric ceramic composition

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JP29303094A JP3250923B2 (en) 1994-11-28 1994-11-28 Dielectric porcelain composition

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522521B2 (en) 2000-07-31 2003-02-18 Murata Manufacturing Co., Ltd. Reduction-resistant dielectric ceramic compact and laminated ceramic capacitor
CN1118444C (en) * 1998-09-28 2003-08-20 株式会社村田制作所 Dielectric ceramic composition and stacked ceramic capacitor
WO2008066119A1 (en) * 2006-11-29 2008-06-05 Kyocera Corporation Dielectric ceramic and capacitor
US8107219B2 (en) 2006-11-29 2012-01-31 Kyocera Corporation Dielectric ceramic and capacitor
US8385049B2 (en) 2008-10-21 2013-02-26 Murata Manufacturing Co., Ltd. Dielectric ceramic and laminated ceramic capacitor
WO2014097678A1 (en) * 2012-12-21 2014-06-26 株式会社村田製作所 Laminated ceramic capacitor and method for producing same
CN110002864A (en) * 2019-02-23 2019-07-12 天津大学 A kind of preparation method of the high anti-reduced form dielectric substance of insulation

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1118444C (en) * 1998-09-28 2003-08-20 株式会社村田制作所 Dielectric ceramic composition and stacked ceramic capacitor
US6522521B2 (en) 2000-07-31 2003-02-18 Murata Manufacturing Co., Ltd. Reduction-resistant dielectric ceramic compact and laminated ceramic capacitor
WO2008066119A1 (en) * 2006-11-29 2008-06-05 Kyocera Corporation Dielectric ceramic and capacitor
US8107219B2 (en) 2006-11-29 2012-01-31 Kyocera Corporation Dielectric ceramic and capacitor
US8385049B2 (en) 2008-10-21 2013-02-26 Murata Manufacturing Co., Ltd. Dielectric ceramic and laminated ceramic capacitor
WO2014097678A1 (en) * 2012-12-21 2014-06-26 株式会社村田製作所 Laminated ceramic capacitor and method for producing same
US9928960B2 (en) 2012-12-21 2018-03-27 Murata Manufacturing Co., Ltd. Monolithic ceramic capacitor and method for manufacturing the same
CN110002864A (en) * 2019-02-23 2019-07-12 天津大学 A kind of preparation method of the high anti-reduced form dielectric substance of insulation

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