JPH08148629A - Semiconductor device, its manufacture and substrate for semiconductor device - Google Patents

Abstract

PURPOSE: To improve the reliability and heat dissipation characteristics and to make it possible to perform mounting inspection after mounting with respect to a semiconductor device having a substrate mounting a semiconductor element, and its production method and the substrate for the semiconductor device. CONSTITUTION: This semiconductor device has a semiconductor element 21, a substrate 24 for semiconductor device having an element mounting portion 32, solder bumps 22 arranged on the substrate 24 for semiconductor device and connected to the semiconductor element 21 and also to external electrodes during mounting, and a sealing resin 23 for sealing the semiconductor element 21. Therefore, the substrate 24 for semiconductor device comprises a bendable base portion 26 and a substrate consisting of a lead portion 28 for connecting the semiconductor element 21 to the solder bumps 22, and the substrate is bent and formed to a bend 29 for locating the lead portion 28 on the outer side at the peripheral edge portion.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a method for manufacturing the same, and a substrate for a semiconductor device, and more particularly to a semiconductor device having a substrate on which a semiconductor element is mounted, a method for manufacturing the same, and a substrate for a semiconductor device.

In recent years, there has been a demand for a semiconductor device having a package structure which can cope with high integration, high speed and high power, and which is low in cost. In order to meet these demands, a BGA type package structure has been developed, has been adopted in various electronic devices, and has been attracting attention.

[0003]

2. Description of the Related Art FIG. 23 is a sectional view showing an example of a conventional semiconductor device. The semiconductor device 11 has a plastic BGA (hereinafter referred to as PBGA) type package structure.

In the figure, reference numeral 12 is a printed circuit board, and one semiconductor element 13 is fixed to the mounting surface 12a, which is the upper surface, by die bonding or the like. A plurality of solder bumps 14 are provided on the mounting surface 12b located on the opposite side of the mounting surface 12a of the printed board 12. The solder bump 14 functions as an external connection terminal.

A predetermined electrode pattern (not shown) is printed on the mounting surface 12a and the inner layer portion of the printed circuit board 12, and the predetermined electrode pattern formed on the mounting surface 12a and the semiconductor element 13 are formed. A wire 15 is disposed between the electrodes, and the wire 15 electrically connects the electrode pattern and the semiconductor element 13.

Further, a plurality of through holes 16 are formed in the printed board 12, and the electrode pattern electrically connected to the semiconductor element 13 through the through holes 16 is drawn out to the mounting surface 12b of the printed board 12. The solder bumps 14 are electrically connected to each other.

On the other hand, an encapsulation resin 17 for encapsulating the semiconductor element 13 is formed on the mounting surface 12a of the printed circuit board 12 by potting (transfer molding is also possible). The sealing resin 17 is used for the semiconductor element 13
Is formed to protect the sealing resin 17
Is formed, the semiconductor element 13 is sealed with the sealing resin 17
It will be embedded inside.

[0008]

However, in the above-mentioned PBGA type semiconductor device 11 having the conventional structure, the printed circuit board 12 is used as a substrate on which the semiconductor element 13 is mounted, and a sealing element for sealing the semiconductor element 13 is used. Stop resin 1
Since No. 7 is formed on the upper surface of the printed circuit board 12 by potting or child transfer molding, the sealing resin 17 is easily peeled off from the printed circuit board 12 and the reliability of the semiconductor device 11 is low.

This is the printed circuit board 12 and the sealing resin 17.
And the sealing resin 17 is potted only on the mounting surface 12a of the printed circuit board 12 or is transfer-molded by the child transfer molding, the mechanical bonding strength between the printed circuit board 12 and the sealing resin 17 is weak. It is due.

Further, since the printed board 12 has low thermal conductivity, there is a problem that even if the semiconductor element 13 generates heat, this heat cannot be efficiently radiated to the outside. Further, the printed circuit board 12 has poor moisture resistance, and has a problem that reliability is low particularly against heat stress.

Further, in the conventional PBGA type semiconductor device 11, the printed board 12 is not provided with electrodes (leads) for confirming whether the solder bumps 14 are properly electrically connected to the mounting board. Therefore, there is a problem in that after mounting the semiconductor device 11 on the mounting substrate, an inspection (mounting inspection) for confirming whether or not the solder bumps 14 are properly electrically connected to the mounting substrate cannot be performed.

The present invention has been made in view of the above points, and provides a semiconductor device, a manufacturing method thereof, and a semiconductor device substrate, which are capable of improving reliability and heat dissipation characteristics and enabling mounting inspection after mounting. The purpose is to do.

[0013]

[Means for Solving the Problems] The above problems can be solved by taking the following means. Claim 1
In the described invention, a semiconductor element, a semiconductor device substrate having an element mounting portion on which the semiconductor element is mounted, and a semiconductor device substrate, which is formed on the semiconductor device substrate and is electrically connected to the semiconductor element and at the time of mounting. In a semiconductor device including an external connection terminal connected to an external electrode and a sealing resin that seals the semiconductor element, the semiconductor device substrate,
The substrate is composed of a foldable base portion and a lead portion formed on the base portion and electrically connecting the semiconductor element and an external connection terminal, and the lead portion is provided outside the peripheral portion of the substrate. It is characterized in that the substrate is bent so as to be located at, and the bent portion is formed.

The invention according to claim 2 is characterized in that a gap is formed between the bent portion and the element mounting portion. The invention according to claim 3 is characterized in that the base portion is formed of a material having high thermal conductivity.

In the invention according to claim 4, the base portion is formed of a conductive material, and an insulating layer is formed between the base portion and the lead portion to connect the semiconductor element and the base portion. It is characterized by being electrically connected.

The invention according to claim 5 is characterized in that an uneven portion is formed on a surface of the base portion different from the surface on which the lead portion is arranged. The invention according to claim 6 is characterized in that the base portion is formed of a metal material.

Further, the invention according to claim 7 is characterized in that the semiconductor element and the lead portion located at the bent portion are connected by a wire. In the invention according to claim 8, a convex portion is formed on the outer peripheral edge portion of the base portion, and the convex portion abuts the element mounting portion in a state where the substrate is bent and formed. It is what

According to the invention of claim 9, the semiconductor element and the lead portion located at the bent portion are connected to a TAB (Tape Au).
It is characterized by being connected by a tomated bonding wire. Further, the invention according to claim 10 is characterized in that a bump is used as the external connection terminal.

In the invention according to claim 11, the substrate forming step of forming the substrate by forming the lead portion on the bendable base portion, and the peripheral portion of the substrate formed by the substrate forming step are A substrate bending step of forming an element mounting portion and a bent portion to form a semiconductor device substrate by bending the lead portion so that the lead portion is located outside, and a semiconductor is formed on the element mounting portion of the semiconductor device substrate. An element mounting step of mounting a chip, a connecting step of electrically connecting a semiconductor chip mounted on the element mounting section and a lead section located at the bent section, and a sealing resin on the semiconductor device substrate. A resin encapsulation step of encapsulating the semiconductor element with a resin by filling with an external connection terminal and an external connection terminal forming step of forming an external connection terminal on the lead portion formed on the semiconductor device substrate. It is an feature.

Further, the invention according to claim 12 is characterized in that, in the substrate bending step, the substrate is bent by press working. Further, the invention according to claim 13 is characterized in that a lead shaping step of shaping the lead portion into a predetermined pattern is performed after the substrate forming step and before the substrate bending step. .

The invention according to claim 14 is characterized in that, in the resin encapsulating step, the encapsulating resin is loaded on the substrate for a semiconductor device by potting or transfer molding. In addition, claim 1
In the invention described in 5, the semiconductor device substrate is configured by a substrate having a foldable base portion and a lead portion formed on the base portion and electrically connected to a mounted semiconductor element, and It is characterized in that the substrate is bent so that the lead portion is located on the outer side, so that the bent portion is formed at the peripheral edge portion.

According to the sixteenth aspect of the invention, in the fifteenth aspect of the invention, the base portion is formed of a highly heat conductive material. The invention according to claim 17 is characterized in that, in the invention according to claim 15, the base portion is formed of a conductive material and an insulating layer is formed between the base portion and the lead portion. is there.

Further, the invention according to claim 18 is characterized in that, in the invention according to claim 15, an uneven portion is formed on a surface of the base portion different from a surface on which the lead portion is arranged. Each of the above means operates as follows.

According to the first aspect of the present invention, the substrate is composed of a base portion which can be bent as a substrate for a semiconductor device, and a lead portion which is formed on the base portion and electrically connects a semiconductor element and an external connection terminal. In addition, the semiconductor device substrate is formed by bending the substrate so that the lead portions are located outside in the peripheral portion of the substrate.

Therefore, in the bent portion, the lead portion is located on the upper surface, and in the element mounting portion of the semiconductor device substrate, the lead portion is positioned on the back side of the element mounting portion. As a result, the lead member can be connected to the semiconductor element simply by bending the substrate without using an expensive printed circuit board such as a multilayer wiring printed circuit board and without using an electrode which is troublesome to form a through hole. It is possible to pull out from the position to the position where the external connection terminal is formed.

Further, in the state where the substrate is bent, the lead portion is also located on the side portion erected with respect to the element mounting portion.
Therefore, in the state where the semiconductor device is mounted on the mounting board and the external connection terminals are connected to the electrode section of the mounting board, between the lead section formed on the side portion or the bent section and the electrode section of the mounting board. It becomes possible to carry out a mounting inspection.

Further, according to the second aspect of the invention, since the gap is formed between the bent portion and the element mounting portion, the sealing resin is formed between the bent portion and the element mounting portion. It is also loaded in the gap formed between the two. Therefore, the sealing resin that has entered the gap generates an anchor effect, the mechanical bonding strength between the sealing resin and the semiconductor device substrate is improved, and the sealing resin can be prevented from peeling from the semiconductor device substrate.
Thereby, the reliability of the semiconductor device can be improved.

Further, according to the inventions of claims 3 and 16, the heat generated in the semiconductor element is provided with the base portion made of the high heat conductive material by forming the base portion with the high heat conductive material. Heat is efficiently radiated to the outside via the semiconductor device base material. That is, since the semiconductor device substrate can also be used as a heat dissipation plate, the cooling efficiency of the semiconductor element can be improved.

According to the fourth aspect of the present invention, the base portion is formed of a conductive material, an insulating layer is formed between the base portion and the lead portion, and the semiconductor element and the base portion are electrically connected. It is possible to use the base portion as a lead portion by electrically connecting them. Therefore, in addition to the lead portion, the base portion can be used as wiring,
The degree of freedom in routing the wiring from the semiconductor element to the external connection terminal can be improved.

Further, since the base portion has a relatively large thickness and is disposed over the entire semiconductor device substrate,
Its resistance is small. Therefore, if the base portion is used as a ground wiring or a power wiring, a semiconductor device with better characteristics can be obtained. Further, according to the invention of claims 5 and 18, the uneven portion is formed on the surface of the base portion different from the surface on which the lead portion is arranged, that is, the surface on which the semiconductor element is mounted and the surface in contact with the sealing resin. By forming
The surface area of the surface on which the semiconductor element is mounted and the surface in contact with the sealing resin can be increased. Therefore, the bondability between the semiconductor element and the base part and the bondability between the sealing resin and the base part can be improved, the semiconductor element can be reliably fixed to the semiconductor device substrate, and the sealant resin is used for the semiconductor device. It is possible to prevent peeling from the substrate.

According to the sixth aspect of the present invention, the moisture absorption rate of the base portion can be reduced by forming the base portion with a metal material. For example, it is caused by water vapor generated by heat applied during mounting. It is possible to prevent the occurrence of cracks in the encapsulating resin and the peeling of the encapsulating resin from the semiconductor device substrate, thus improving the reliability of the semiconductor device.

Further, according to the invention of claim 7, the semiconductor element and the lead are located by using a wire bonding device which is generally used by connecting the semiconductor element and the lead portion located at the bent portion with a wire. The connection with the parts can be easily performed. Further, since the lead portion is formed on the upper surface of the bent portion, the difference in height between the semiconductor element and the lead portion is small. Therefore, the movement amount of the capillary of the wire bonding apparatus can be reduced, and the wire bonding process can be performed efficiently.

Further, according to the invention of claim 8, since the convex portion formed on the outer peripheral edge portion of the base portion is in contact with the element mounting portion in a state where the substrate is bent and formed, The curved portion is supported by the element mounting portion by the convex portion. Therefore, even if the ultrasonic welding method is used as the wire bonding process, the bending portion does not generate unnecessary vibration, and the ultrasonic bonding can be reliably performed, thereby improving the reliability of the wire bonding process. be able to.

According to the ninth aspect of the invention, the semiconductor element and the lead portion located at the bent portion are provided with TAB (Tape Au).
By connecting with a tomated bonding wire, the semiconductor element and the lead portion can be connected by a simple process such as thermocompression bonding. According to the invention of claim 10, by using the bumps as the external connection terminals, the semiconductor device according to the present invention can be used in a state equivalent to that of the BGA type semiconductor device. Therefore, the number of terminals can be increased without considering the deformation of the external connection terminals, and the mountability can be improved.

According to the eleventh aspect of the present invention, the substrate is formed by forming the lead portion on the foldable base portion in the substrate forming step, and the peripheral portion of the substrate is formed into the lead portion in the subsequent substrate bending step. Is formed so as to be located on the outside so that a semiconductor device substrate having an element mounting portion and a bending portion is formed, and thereafter, an element mounting step, a connecting step, a resin sealing step, and an external connecting terminal. A semiconductor device is manufactured by performing the forming process.

Therefore, in the substrate forming process, the through hole forming process, the laminating process of a plurality of substrates and the like which are required in the conventional printed circuit board forming process of the BGA type semiconductor device are not necessary, and the substrate formation is easy. Can be done. Further, since the board bending step is simply an operation of bending the peripheral portion of the board inward so that the lead member is located outside, the board bending operation can be easily performed. it can.

According to the twelfth aspect of the invention, in the substrate bending step, the substrate is bent by press working, so that the semiconductor device substrate can be easily and accurately processed, and automation is achieved. It is also possible to improve the efficiency of substrate bending processing.

According to the thirteenth aspect of the present invention, after the substrate forming step is performed and before the substrate bending step is performed, a lead shaping step is performed to shape the lead portion into a predetermined pattern. It is possible to shape the pattern of the lead part in the flat plate state before bending. Therefore, the resist material for patterning and the etching process can be easily performed.

According to the fourteenth aspect of the present invention, in the resin encapsulating step, the encapsulating resin is loaded on the semiconductor device substrate by potting, so that the encapsulating resin is sealed without requiring a complicated mold. Filling with the stop resin can be performed. Further, since the bent portion has a function as a flow stop for the sealing resin, the semiconductor element can be reliably resin-sealed. In addition, productivity can be improved by loading the semiconductor device substrate by transfer molding. Even when the transfer mold is used, a complicated mold is not required.

Further, according to the invention of claim 15, a base portion on which the semiconductor device substrate can be bent, and a lead portion formed on the base portion and electrically connected to a mounted semiconductor element are provided. The substrate is formed by bending the base material so that the lead portion is located on the outer side of the peripheral portion, and the bent portion is formed. It is possible to pull out the portion from the connection position with the semiconductor element to the formation position of the external connection terminal. Therefore, it is possible to reduce the product cost as compared with the conventionally used multilayer wiring printed circuit board and the like, and it is not necessary to provide an electrode which is troublesome to form a through hole, etc., so that a semiconductor device substrate can be easily manufactured. You can

According to the seventeenth aspect of the invention, the base portion is used as the lead portion because the base portion is made of a conductive material and the insulating layer is formed between the base portion and the lead portion. Is possible. Therefore, since the base portion can be used as the wiring in addition to the lead portion, the degree of freedom in routing the wiring from the semiconductor element to the external connection terminal can be improved.

[0042]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a semiconductor device 20 which is a first embodiment of the present invention. The semiconductor device 20 according to the present embodiment roughly includes a semiconductor element 21, a solder bump 22 that serves as an external connection terminal, a sealing resin 23 (shown by a satin finish),
And a semiconductor device substrate 24 and the like, which are essential parts of the present invention.

The semiconductor device substrate 24 is shown in FIGS.
It is formed by bending the substrate 25 shown in FIG. 12 and 13 show a semiconductor device substrate 24 before being incorporated in the semiconductor device 20. 10 is a sectional view taken along the line AA in FIG. 11, and FIG. 12 is a sectional view taken along the line BB in FIG.

As shown in FIGS. 10 and 11, the substrate 25 has a three-layer structure, and the base portion 26,
The insulating layer 27 and the lead portion 28 are sequentially laminated. The base portion 26 is formed of, for example, copper (Cu) which has good thermal conductivity and bending workability. The insulating layer 27 located under the base portion 26 is made of, for example, a polyimide resin. In addition, the insulating layer 2
A lead portion 28 is formed in a lower portion of the lead wire 7. The lead portion 28 is formed of copper (Cu) like the base portion 26, and is patterned in advance in a predetermined pattern by performing an etching process. There is.

The base portion 26 is formed to have a relatively large thickness, and the base portion 26 has a mechanical strength required for the semiconductor device substrate 24. Also, the lead portion 28 is used for the semiconductor element 2 as described later.
1 functions as a wiring that electrically connects the solder bumps 22 to each other, and the thickness thereof is selected to be smaller than that of the base portion 26. In addition, an insulating layer 27 made of a polyimide resin, which is an insulating member, is interposed between the base portion 26 and the lead portion 28, both of which are conductive metals, and the insulating layer 27 allows the base portion 26 and the lead portion 28 to be connected. And are insulated from each other. In addition, this insulating layer 27
Also functions as a joining material that joins the base portion 26 and the lead portion 28.

The substrate 25 having the above-described structure has a cross shape as shown in FIG. 11 before being bent, and the extending portions 25a to 25d extending in four directions are formed.
By bending and bending, the semiconductor device substrate 24 shown in FIGS. 1 and 12 is formed. When the extension portions 25a to 25d are bent, the substrate 25
Is attached to the press device so that the lead portion 28 is located on the lower side and the base portion 26 is located on the upper side, as shown in FIG.
The bent portion 2 is formed by bending the extending portions 25a to 25d inward (that is, in the direction indicated by the arrow C in FIG. 10).
9 is formed.

As shown in FIGS. 1 and 12, the bent portion 29 is bent so as to have a substantially U-shape when viewed from the side, and thus has an upper portion 30 and a side portion 31. It is composed. The portion of the substrate 25 where the bending process is not performed is the element mounting portion 3 on which the semiconductor element 21 is mounted.
It becomes 2.

The upper portion 30 is configured to extend substantially parallel to the element mounting portion 32, and the side portion 31 is erected on the element mounting portion 32. Further, as described above, the bending portion 29 is bent so as to have a substantially U-shape, so that a gap 33 is formed between the element mounting portion 32 and the upper portion 30.

Further, as described above, the lead portion 28 is provided on the lower side.
However, the lead portion 28 is naturally positioned on the outer peripheral portion of the semiconductor device substrate 24 by disposing the substrate 25 so that the base portion 26 is positioned on the upper side and bending the peripheral edge portion inward. That is, by performing the bending process as described above, the lead portion 28 is located on the upper surface of the upper portion 30 of the bent portion 29 which is a portion electrically connected to the semiconductor element 21, and the solder bump 22 is formed. The structure is also located on the back surface of the element mounting portion 32 (hereinafter referred to as the mounting surface 34) which is a portion to be formed.

As described above, by simply bending the substrate 25, the lead portion 28 can be pulled out from a portion electrically connected to the semiconductor element 21 to a portion where the solder bump 22 is formed. In the conventional BGA type semiconductor device 11 (see FIG. 23), in order to electrically connect the semiconductor element 13 and the solder bump 14, a through hole 16 or a printed wiring not shown in FIG. 23 is provided in the printed circuit board 12. It had to be formed on the surface of the substrate.

However, in the semiconductor device substrate 24 according to the present embodiment, the substrate 25 is simply used without using an expensive printed circuit board such as a multilayer wiring printed circuit board and without using an electrode which is troublesome to form a through hole. Since the lead portion 28 can be drawn from the portion electrically connected to the semiconductor element 21 to the portion where the solder bump 22 is formed by bending the semiconductor substrate 21, the semiconductor device substrate can be easily and inexpensively manufactured. 24 can be formed.

Returning to FIG. 1, the description of the structure of the semiconductor device 20 will be continued. The semiconductor element 21 is mounted on the element mounting portion 32 of the semiconductor device substrate 24 configured as described above. Specifically, the semiconductor element 21 is fixed to the element mounting portion 32 by using, for example, the die attaching material 35 with solder having an excellent stress buffer effect. It is also possible to use a conductive paste or a tape material as the die attaching material 35.

Semiconductor element 2 mounted on element mounting portion 32
1 and the lead portion 28 formed on the bent portion 29 are electrically connected by a wire 36. In this way, by connecting the semiconductor element 21 and the lead portion 28 located at the bent portion 29 with the wire 36, a commonly used wire bonding apparatus can be used, and the semiconductor element 21 and the lead portion 28 can be connected. Can be easily connected.

Further, since the lead portion 28 is formed on the upper surface of the bent portion 29 as described above, the heights of the semiconductor element 21 and the lead portion 28 are substantially equal to each other, and therefore the capillary of the wire bonding apparatus is The amount of movement can be reduced and the wire bonding process can be performed efficiently.

The solder bumps 22 are formed on the semiconductor device substrate 24.
A large number of them are arranged on the mounting surface 34. The solder bumps 22 are respectively connected to the lead portions 28 that are patterned on the mounting surface 34, so that the semiconductor element 21 is electrically connected to the solder bumps 22 through the wires 36 and the lead portions 28. Becomes

The sealing resin 23 is provided to seal the semiconductor element 21 and protect it from the outside. The sealing resin 23 is filled on the upper surface of the semiconductor device substrate 24 by potting (or transfer molding) as described later. As described above, by forming the bent portion 29 on the semiconductor device substrate 24, the gap 33 is formed between the upper portion 30 and the element mounting portion 32. Therefore, the sealing resin 23 is also filled in the gap 33 by potting.

As described above, the sealing resin 23 is also provided in the gap 33.
Is filled, the sealing resin 23 in the gap 33 produces an anchor effect, and the mechanical bonding strength between the sealing resin 23 and the semiconductor device substrate 24 is improved. Therefore, the sealing resin 23 can be prevented from peeling off from the semiconductor device substrate 24, and thus the reliability of the semiconductor device 20 can be improved. Further, since the bent portion 29 also has a function as a resin flow stop, the semiconductor element 21 can be reliably resin-sealed in the semiconductor device substrate 24.

In the semiconductor device 20 having the above structure, the base portion 26 occupying most of the semiconductor device substrate 24 is formed of copper (Cu) which is a metal material.
The moisture absorption rate of the base portion 26 (in other words, the semiconductor device substrate 24) can be reduced.

Therefore, the semiconductor device 20 is mounted on the mounting substrate 37.
Since the semiconductor device substrate 24 has a low moisture absorption rate even when a heat treatment is performed to connect the solder bumps 22 to the electrode portions 38 formed on the mounting substrate 37 during mounting (see FIG. 9), This heat does not generate steam. Accordingly, it is possible to prevent cracks in the sealing resin 23 and peeling of the sealing resin 23 from the semiconductor device substrate 24, and it is possible to improve the reliability of the semiconductor device 20.

Since the base portion 26 is formed of copper (Cu) having good thermal conductivity as described above, the heat generated in the semiconductor element 21 is provided with the base portion 26 made of a highly heat conductive material. Heat is efficiently radiated to the outside through the semiconductor device base material 24. Further, the semiconductor device base material 24 is configured to be exposed to the outside except for the portion where the sealing resin 23 is provided. Therefore, the heat dissipation efficiency of the semiconductor device base material 24 is high and the semiconductor device substrate 24 can be used as a heat dissipation plate, so that the semiconductor element 21 can be efficiently cooled.

Further, since the semiconductor device 20 has a configuration in which the peripheral portion of the substrate 25 is bent inward to form the bent portion 29, the semiconductor element mounted on the bent portion 29 and the element mounting portion 32 is formed. It has a structure close to 21. That is, the shape of the semiconductor device base material 24 can be made close to the shape of the semiconductor element 21, so that the size of the semiconductor device 20 can be reduced.

Further, the semiconductor device 20 having the above structure
Uses solder bumps 22 as external connection terminals,
Since the solder bumps 22 are disposed on the mounting surface 34 located at the bottom of the semiconductor device substrate 24, the semiconductor device 2
It is possible to use 0 in a state equivalent to that of a BGA type semiconductor device. Therefore, the number of terminals can be increased without considering the deformation of the external connection terminals, and the mountability can be improved.

FIG. 9 shows a semiconductor device 20 having the above structure.
It is a schematic block diagram which shows the state which mounted on the mounting substrate 37. As described above, many electrode parts 38 are formed on the surface of the mounting substrate 37, and the solder bumps 22 of the semiconductor device 20 are bonded to the electrode parts 38.

The solder bumps 22 are used as the semiconductor device base material 24.
A large number of two-dimensionally arranged on the mounting surface 34 of
Therefore, in the state where the semiconductor device 20 is mounted on the mounting board 37, the solder bumps 22 provided at the central positions (positions inside the mounting surface) of the mounting surface 34 are attached to the electrode parts 38 of the mounting board 37. It is difficult to inspect whether the connection has been made surely (mounting inspection).

However, the semiconductor device 20 according to the present embodiment.
Then, the lead portion 28 is disposed on the side portion 31 of the bent portion 29 formed on the semiconductor device base material 24.
The lead portion 28 located at 1 is exposed to the outside. The lead portion 28 located on the side portion 31 is electrically connected to the solder bump 22.

Therefore, when the solder bumps 22 are properly connected to the electrode portions 38 of the mounting substrate 37, the lead portions 28 should be electrically connected to the electrode portions 38 as a matter of course. Therefore, the mounting inspection can be performed by inspecting whether the lead portion 28 located on the side portion 31 of the bent portion 29 and the electrode portion 38 of the mounting substrate 37 are electrically connected.

Specifically, the solder bump 22 shown in FIG.
-1 (in the figure, the solder bump 22-1 is located outside,
The same applies to the solder bumps 22 located inside).
Assuming that the solder bumps 22-1 and the electrode portions 38-1 are properly connected, the solder bumps 22-1 and
-1 is connected to each of the lead portion 28-1 and the electrode portion 38-1 with an inspection probe, and a tester or the like is used to check whether or not the lead portion 28-1 and the electrode portion 38-1 are electrically connected. To inspect.

As shown in FIG. 9, since the lead portion 28-1 and the electrode portion 38-1 are both exposed to the outside, the inspection probe can be easily connected. Therefore, the mounting inspection can be performed in a state where the semiconductor device 20 is mounted on the mounting substrate 37 and the solder bumps 22 are connected to the electrode portions 38 of the mounting substrate 37, and the repair process can be performed based on the test result. The mounting yield and reliability can be improved.

Further, in the example shown in FIG. 9, the lead portion 28 located on the side portion 31 of the bent portion 29 has the same width dimension in the vertical direction, which makes it difficult to connect the inspection probe. . However, as in the semiconductor device 20A shown in FIG. 16, the wide land portion 3 is formed on the lead portion 28.
By providing 9, the mounting inspection can be easily performed. Further, by arranging the land portions 39 in a zigzag manner, it is possible to form the land portions 39 while keeping the arrangement pitch of the lead portions 28 narrow.

17 and 18 show semiconductor devices 20B and 20C which are modified examples of the semiconductor device 20 described above. 17 and 18, the same components as those shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. A semiconductor device 20 according to the first modification shown in FIG.
B is characterized in that the bent portion 29A of the semiconductor device substrate 24A is bent and formed, and the sealing resin 23A is disposed up to the outside position of the semiconductor device substrate 24A. is there.

In the semiconductor device 20 shown in FIG.
The bent portion 29 of the semiconductor device substrate 24A is formed to be bent twice at a right angle. However, since the lead 28 in the bent portion 29 is formed at a right angle, there is a possibility of cracking or disconnection beyond the limit of elongation. Therefore, as in this modification, the bent portion 29A is formed in a curved shape that does not exceed the limit of the elongation rate, and the bent portion 29 is not provided with a straight line portion in order to reduce the thickness of the semiconductor device. It has a structure in which it is formed 180 degrees at one time to improve workability.

Further, the sealing resin 23A is arranged up to the outer side position of the semiconductor device substrate 24A.
It is not necessary to directly contact the semiconductor device substrate 24A with the molding die when molding the sealing resin 23A. In the configuration shown in FIG. 1 in which the semiconductor device substrate 24A is brought into direct contact with the molding die and the sealing resin 23A is molded, the semiconductor device substrate 2 is heated by heating during molding.
4A thermally expands, and due to this, the bent portion 2 relatively
9 is pressed by the molding die to be deformed, and the semiconductor device 20
It is conceivable that the manufacturing yield of will deteriorate.

However, the semiconductor device substrate 24A is deformed at the time of molding by molding the sealing resin 23A without directly contacting the semiconductor device substrate 24A with the molding die as in this modification. Therefore, the manufacturing yield of the semiconductor device 20B can be improved. Further, since the lead portion 28 is completely embedded in the sealing resin 23A at the side portion, it is possible to prevent the lead portion 28 from being damaged at the side portion.

The semiconductor device 20C according to the second modification shown in FIG. 18 has a bent portion 29 of the semiconductor device substrate 24A.
A is bent in a curved shape, and the sealing resin 23A is arranged up to an intermediate position of the upper portion 30 of the semiconductor device substrate 24A (which constitutes a part of the bent portion 29A as described above). It is characterized by that.

Also in this modification, since the bent portion 29A is bent in a curved shape, the bending process can be easily performed. In addition, the sealing resin 23A is applied to the semiconductor device substrate 2
By arranging the upper part 30 of 4A up to an intermediate position, the molding die for mounting the semiconductor device substrate 24A in the molding step has a cavity structure having a concave portion for mounting the bent portion 29A. That is, when the semiconductor device substrate 24A is mounted on the molding die, the bent portion 29 is held in the recess formed in the molding die.

Therefore, even if heat is applied to the semiconductor device substrate 24A along with resin sealing in the molding process, the entire bent portion 29 is held in the above-mentioned recess. Its shape does not change.
Therefore, by adopting the configuration of this modification, the deformation of the semiconductor device substrate 24A can be suppressed, and thus the manufacturing yield of the semiconductor device 20C can be improved. Further, in the semiconductor device 20C according to the present modification, the amount of the sealing resin 23B used is reduced, so that it is possible to reduce the product cost. Furthermore, the semiconductor device 20C
Is smaller than the semiconductor device 20B in plan view, has good heat dissipation, and enables mounting inspection between the lead portion formed in the bent portion 29A and the electrode portion of the mounting substrate. Have advantages.

FIG. 2 shows a semiconductor device 40 which is a second embodiment of the present invention. In each embodiment described below, the same components as those of the semiconductor device 20 according to the first embodiment shown in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. The semiconductor device 40 according to the present embodiment includes the semiconductor element 21.
And the lead portion 28 located at the bent portion 29 with TAB (Tape
Automated Bonding) Wire 41 is used for connection. The TAB wire 41 has a structure in which a wiring pattern is formed on a resin film, and is electrically connected to the semiconductor element 21 and the lead portion 28 by being connected to the semiconductor element 21 and the lead portion 28 using bumps 42. .

Thus, the semiconductor element 21 and the bent portion 29 are
By connecting the lead portion 28 located at the position 1 with the TAB wire 41, the semiconductor element 21 and the lead portion 28 can be connected by a simple process such as thermocompression bonding. Also,
The TAB method is suitable for automation and can reduce the pitch of the wiring pattern arranged on the resin film. Therefore, the TAB method is particularly effective when used for the semiconductor element 21 having a high density and a large number of terminals.

19 and 20 show semiconductor devices 40A and 40B which are modified examples of the semiconductor device 40 described above. 19 and 20, the same components as those shown in FIGS. 2 and 17 and 18 are designated by the same reference numerals, and the description thereof will be omitted.

The semiconductor device 40A according to the first modification shown in FIG. 19 is similar to the semiconductor device 20B shown in FIG.
The bent portion 29A of the semiconductor device substrate 24A is bent and formed, and the sealing resin 23A is applied to the semiconductor device substrate 2
It is characterized in that it is arranged up to an outer position of 4A.

Therefore, the semiconductor device 40A according to the present modification.
Also, the bending process of the bent portion 29A can be easily performed. In addition, the sealing resin 23A is applied to the semiconductor device substrate 2
By arranging up to the position outside 4A, it is possible to suppress deformation of the semiconductor device substrate 24A during molding, and thus it is possible to improve the manufacturing yield of the semiconductor device 40A. Further, it is possible to prevent the lead portion 28 from being damaged at the side position.

In the semiconductor device 40B according to the second modification shown in FIG. 20, the bent portion 29A of the semiconductor device substrate 24A is bent and formed in the same manner as the semiconductor device 20C shown in FIG. At the same time, the sealing resin 23A is arranged up to the middle of the upper portion 30 of the semiconductor device substrate 24A.

Therefore, the bent portion 29A is also used in this modification.
Since it is bent in a curved shape, the bending process can be easily performed. In addition, by disposing the sealing resin 23A up to an intermediate position of the upper portion 30 of the semiconductor device substrate 24A, it is possible to suppress the deformation of the semiconductor device substrate 24A, thus improving the manufacturing yield of the semiconductor device 40B. Can be made. Also, the sealing resin 23B used
Since the amount of the product is reduced, it is possible to reduce the product cost.

FIG. 3 shows a semiconductor device 50 which is a third embodiment of the present invention. Semiconductor device 50 according to the present embodiment
Forms a convex portion 51 integrated with the base portion 26 between the upper portion 30 of the bent portion 29 and the element mounting portion 32, and the convex portion 51 causes the upper portion 30 of the bent portion 29 to move to the element mounting portion 32. The semiconductor device substrate 52 configured to be supported above is used.

Semiconductor device substrate 5 used in this embodiment
2 is formed by bending the substrate 53 shown in FIG. A convex portion 51 protruding upward is formed on the outer peripheral edge portion of the substrate 53. The semiconductor device substrate 52 shown in FIG. 3 can be formed by bending the peripheral portion of the substrate 53 having the protrusions 51 formed into a substantially U-shape.

In the semiconductor device 50 having the above structure, the convex portion 51 formed on the outer peripheral edge of the base portion 26 is in contact with the element mounting portion 32 in a state where the substrate 53 is bent and formed. Therefore, the bent portion 29 (particularly the upper portion 30) is supported by the element mounting portion 32 by the convex portion 51.

Therefore, even if the ultrasonic welding method is used as the wire bonding processing method for connecting the wire 36 to the semiconductor element 21 and the lead portion 28, it is possible to prevent the bent portion 29 from vibrating due to the ultrasonic waves applied. In the semiconductor device 20 having the configuration shown in the first embodiment, the upper portion 30 of the bent portion 29 is
Is in a cantilever state, and even if an ultrasonic transducer is brought into contact with the connecting position of the wire 6 for wire welding, the bent portion 29
Will vibrate and ultrasonic welding will not be possible.

However, by providing the convex portion 51 as in the present embodiment, the bent portion 29 (particularly the upper portion 30) has the convex portion 5.
The bent portion 29 is supported by the element mounting portion 32 by 1.
It is possible to prevent the occurrence of vibrations on the surface and reliably perform ultrasonic bonding. Therefore, the reliability of the wire bonding process can be improved.

FIG. 5 shows a semiconductor device 60 which is a fourth embodiment of the present invention. The semiconductor device 60 shown in the figure has a surface different from the surface on which the lead portion 28 of the base portion 26 constituting the semiconductor device substrate 61 is arranged, that is, the element mounting portion 32 on which the semiconductor element 21 is mounted and the sealing resin. An uneven portion (hereinafter referred to as dimple) 62 is formed on the surface with which 23 contacts. This dimple 62 is
When the substrate 25 is bent, it may be collectively formed by pressing, or when the substrate 25 is flat, it may be formed by punching, etching, or the like. In addition, in this embodiment, an example in which a hemispherical concave portion is formed as the dimple 62 is shown, but the shape of the dimple 62 is not limited to this.

As described above, by forming the dimples 62 on the surface where the element mounting portion 32 and the sealing resin 23 contact, it is possible to increase the surface area of the surface where the element mounting portion 32 and the sealing resin 23 contact. it can. Therefore, the bondability between the semiconductor element 21 and the element mounting portion 32 (base portion 26) and the bondability between the sealing resin 23 and the base portion 26 can both be improved, and the semiconductor element 21 can be reliably used for semiconductor devices. It can be fixed to the substrate 61, and at the same time, the sealing resin 23 can be prevented from peeling from the semiconductor device substrate 61.
The reliability of the semiconductor device 60 can be improved. 21 and 22 show semiconductor devices 60A and 60B which are modified examples of the semiconductor device 60 described above. Incidentally, FIG.
1 and FIG. 22, the same components as those shown in FIG. 5, FIG. 17, and FIG.

The semiconductor device 60A according to the first modification shown in FIG. 21 is similar to the semiconductor device 20B shown in FIG.
The bent portion 29A of the semiconductor device substrate 61A is bent and formed, and the sealing resin 23A is applied to the semiconductor device substrate 6 as well.
It is characterized in that it is arranged up to an outer position of 1A.

Therefore, the semiconductor device 60A according to the present modification.
Also, the bending process of the bent portion 29A can be easily performed. In addition, the sealing resin 23A is applied to the semiconductor device substrate 6
By disposing the semiconductor device substrate 61A up to the outer side position of 1A, deformation of the semiconductor device substrate 61A during molding can be suppressed, and thus the manufacturing yield of the semiconductor device 60A can be improved. Further, it is possible to prevent the lead portion 28 from being damaged at the side position.

In the semiconductor device 60B according to the second modification shown in FIG. 22, the bent portion 29A of the semiconductor device substrate 61A is bent and formed in the same manner as the semiconductor device 20C shown in FIG. At the same time, the sealing resin 23A is arranged up to a midway position of the upper portion 30 of the semiconductor device substrate 61A.

Therefore, also in this modification, the bent portion 29A is formed.
Since it is bent in a curved shape, the bending process can be easily performed. In addition, by disposing the sealing resin 23A up to the middle of the upper portion 30 of the semiconductor device substrate 61A, it is possible to suppress the deformation of the semiconductor device substrate 61A, thereby improving the manufacturing yield of the semiconductor device 60B. Can be made. Also, the sealing resin 23B used
Since the amount of the product is reduced, it is possible to reduce the product cost.

FIG. 6 shows a semiconductor device 70 which is a fifth embodiment of the present invention. Semiconductor device 70 according to the present embodiment
Is copper (Cu) provided on the semiconductor device substrate 71.
The base portion 26 formed by the above is positively used as a lead member. Therefore, a part of the bent portion 29 is partially covered with the insulating layer 27 and the lead portion 28.
Are removed to form base connecting portions 72 and 73. A wire 74 is disposed between the base portion 26 and the lead 28 in the base connecting portion 72, and a wire 75 is disposed between the semiconductor element 21 and the base portion 26 in the base connecting portion 72. .

As described above, the base portion 26 is formed of a conductive material (copper in this embodiment), and the insulating layer 27 is formed between the base portion 26 and the lead portion 28. By electrically connecting the semiconductor element 21 and the base portion 26 after insulating the portion 28,
The base portion 26 can be used as a lead member. Therefore, in addition to the lead portion 28, the base portion 26 can be used as a wiring, so that the degree of freedom in routing the wiring from the semiconductor element 21 to the solder bump 22 can be improved.

Since the base portion 26 has a relatively large thickness and is disposed over the entire semiconductor device substrate 71, its resistance value is small. Therefore, by using the base portion 26 as the ground wiring or the power wiring, the electrical characteristics of the semiconductor device 70 can be further improved.

FIG. 7 shows a semiconductor device 80 which is a sixth embodiment of the present invention. Semiconductor device 80 according to the present embodiment
Has a structure in which the semiconductor device substrate 81 is formed by bending the substrate 82 shown in FIG. The substrate 82 is composed of a base portion 83 made of an insulating member and a lead portion 28 directly arranged on the base portion 83.

The base portion 83 is formed of an insulating heat resistant resin (plastic) and is a resin having a heat softening property. The lead portion 28 is formed on the base portion 83 by adhesion or plating. Substrate 8 shown in FIG.
The bending process of 2 is performed in a high temperature environment in which the insulating resin is softened. This allows the substrate 82 to be bent easily.

As described above, by using the insulating member as the base portion 83, the structure of the substrate 82 can be simplified and the workability of the substrate 82 can be improved. Further, by using a resin as the base portion 83, it is possible to improve the bondability between the sealing resin 23 and the base portion 83 and prevent the sealing resin 23 from peeling off. Therefore, the reliability of the semiconductor device 80 can be improved.

Next, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. In the following description, a method for manufacturing the semiconductor device 20 according to the first embodiment shown in FIG. 1 will be described as an example. Further, in FIGS. 10 to 15, the same components as those of the semiconductor device 20 according to the first embodiment shown in FIG.

In the method of manufacturing a semiconductor device according to this embodiment, the substrate forming step, the lead shaping step, the substrate bending step, the element mounting step, the connecting step, the resin sealing step, and the external connecting terminal forming step are performed. By implementing the semiconductor device 2
0 is produced. 10 and 11 show a substrate forming process. In the substrate forming step, first, a plate-shaped member in which the base portion 26, the insulating layer 27, and the lead portion 28 are laminated in three layers from the upper side is formed, and this is punched by press to form a plate-shaped member, as shown in FIG. A cross-shaped substrate 25 is formed when seen in a plan view. Further, after the substrate 25 is formed, for example, nickel (Ni) -gold (Au) plating treatment is performed on the surface of the substrate 25 in order to prevent oxidation of copper and improve wire bondability in the wire bonding treatment described later.

The formation of the substrate 25 does not require the through hole forming process and the laminating process of a plurality of substrates which are required in the conventional printed circuit board forming process of the BGA type semiconductor device 11 (see FIG. 23). , Substrate 2 compared to conventional
5 can be easily formed. Further, by punching the substrates 25 by pressing as described above, it is possible to collectively form a plurality of substrates 25,
The substrate 25 can be formed with high efficiency.

In this embodiment, as shown in FIG. 11, each substrate 25 is supported by a support bar 90 to form a frame 91.
Although a plurality of substrates are supported by the above, they may be separated into individual substrates 25 during press punching.
In the above substrate forming process, the base portion 26, the insulating layer 2
7. When the lead portion 28 is laminated and the substrate 25 shaped in a cross shape is formed, the lead shaping step is subsequently performed. Although not shown, in this lead shaping step, the lead portion 28 provided on the substrate 25 is shaped into a predetermined pattern. Specifically, for the lead portion 28 provided on the entire surface of the substrate 25, a resist is provided on a portion to be left as the lead portion 28 by using, for example, a photolithography technique, and then unnecessary by performing an etching process. Remove the part. As a result, FIG.
The lead portion 28 having a predetermined pattern as shown in FIG.

When the lead shaping process is completed, a substrate bending process is subsequently performed on the substrate 25. 12 and 13 show a semiconductor device substrate 24 formed by performing the substrate bending step. In the substrate bending step, the peripheral edge portions (each cross-shaped peripheral edge portion) of the substrate 25 formed in the substrate forming step are bent and formed inward so that the lead portions 28 are located outside (the bending direction is shown in FIG. 10). (Shown by arrow C)
To form. The semiconductor device substrate 24 is formed by such a simple operation, so that the substrate bending step can be performed easily and efficiently.

Further, in the present embodiment, the bending process of the substrate 25 is performed by the press process. By using the pressing process as the bending process of the substrate 25, the semiconductor device substrate 24 can be easily and accurately formed, and the punching process and the bending process performed in the substrate forming process described above can be performed. It is also possible to perform the bending process with the same press device, and thus the efficiency of the forming process of the semiconductor device substrate 24 can be improved.

After the semiconductor device substrate 24 is formed as described above, an element mounting process is subsequently performed. In this element mounting process, the element mounting portion 32 of the semiconductor device substrate 24 is used.
Using the die attachment material 35 (for example, solder) on the semiconductor element 2
Mount and fix 1. FIG. 14 shows a state in which the semiconductor element 21 is mounted on the element mounting portion 32 of the semiconductor device substrate 24.

When the semiconductor element 21 is mounted on the element mounting portion 32 of the semiconductor device substrate 24 as described above, a connection step is subsequently performed, and the semiconductor element 21 and the lead portion 28 are connected using a wire bonding device. A wire 36 is arranged in between. At this time, the semiconductor device substrate 24 is naturally positioned on the upper surface of the bent portion 29 by bending the substrate 25. Therefore, even if the semiconductor device substrate 24 is formed by bending the substrate 25, the wire 36 can be disposed without any inconvenience. Note that FIG. 15 shows a state in which the wire 36 is arranged between the semiconductor element 21 and the lead portion 28.

After the connection step is performed as described above, the resin sealing step is subsequently performed, and the sealing resin 23 is potted or transferred from the upper portion of the semiconductor device substrate 24 by transfer molding (potting is adopted in this embodiment). The semiconductor element 21 is sealed. At this time, the sealing resin 23 is also filled in the gap 33 formed between the bent portion 29 and the element mounting portion 32 to exert the anchor effect, as described above.

When the resin sealing step is completed, the external connection terminal forming step is subsequently performed, and the solder bumps 22 which will be the external connection terminals are arranged at predetermined positions on the mounting surface 34 of the semiconductor device substrate 24. To arrange the solder bumps 22, for example, solder balls having a uniform particle size are used, and a paste or the like is applied in advance to the solder bump forming positions on the mounting surface 34, and the solder balls are attached to the paste. A method of heating to form the solder bumps 22 may be adopted.

Finally, the semiconductor device 20 is manufactured by separating each semiconductor device substrate 24 from the support bar 90. In each of the above-described embodiments (excluding the sixth embodiment), the configuration example using copper (Cu) as the material of the base portion 26 has been described, but the material of the base portion 26 is not limited to copper. Alternatively, for example, aluminum, copper alloy, iron alloy, etc. can be used.

[0112]

As described above, according to the present invention, the following various effects can be realized. According to the invention of claim 1, the lead portion is located on the upper surface in the bent portion, and the lead portion is located on the rear surface side of the element mounting portion in the element mounting portion of the semiconductor device substrate. Therefore, without using an expensive printed circuit board such as a multilayer wiring printed circuit board, and without using an electrode which is troublesome to form a through hole, simply by bending the circuit board, the lead member can be connected from the connection position with the semiconductor element. It is possible to pull out to the formation position of the external connection terminal.

Further, since the lead portion is also located on the side portion erected with respect to the element mounting portion when the board is bent, the semiconductor device is mounted on the mounting board and the external connection terminals are mounted on the mounting board. In the state of being connected to the electrode portion, the mounting inspection can be performed between the lead portion formed on the side portion or the bent portion and the electrode portion of the mounting substrate.

According to the second aspect of the invention, the sealing resin is also loaded in the gap formed between the bent portion and the element mounting portion, so that the sealing resin that has entered the gap is Anchor effect occurs. Therefore, the mechanical bonding strength between the encapsulating resin and the semiconductor device substrate is improved, and the encapsulating resin can be prevented from peeling off from the semiconductor device substrate, thereby improving the reliability of the semiconductor device.

Further, according to the inventions of claims 3 and 16, the heat generated in the semiconductor element is efficiently radiated to the outside through the base material for the semiconductor device having the base portion made of the high thermal conductive material. Therefore, the substrate for a semiconductor device can be used also as a heat dissipation plate, so that the cooling efficiency of the semiconductor element can be improved.

According to the fourth aspect of the invention, the base portion can be used as the lead portion, and the base portion can be used as the wiring in addition to the lead portion, so that the semiconductor element to the external connection terminal can be connected. The degree of freedom in wiring can be improved.

Since the base portion has a relatively large thickness and is disposed over the entire semiconductor device substrate, its resistance value is small. Therefore, by using the base portion as a ground wiring or a power supply wiring, the characteristics can be improved. A good semiconductor device can be obtained. Further, according to the fifth and the eighteenth aspects of the present invention, the surface area of the surface on which the semiconductor element is mounted and the surface in contact with the sealing resin can be increased, and therefore, the bondability between the semiconductor element and the base portion Also, the bondability between the sealing resin and the base portion can be improved. Therefore, the semiconductor element can be reliably fixed to the semiconductor device substrate, and the sealing resin can be prevented from peeling off from the semiconductor device substrate.

Further, according to the invention of claim 6, since the base portion is made of a metal material, the moisture absorption rate of the base portion can be lowered, and for example, it is caused by water vapor generated by heat applied at the time of mounting. It is possible to prevent the occurrence of cracks in the encapsulating resin and the peeling of the encapsulating resin from the semiconductor device substrate, thus improving the reliability of the semiconductor device.

According to the invention of claim 7, the semiconductor element and the lead are located by using a wire bonding device which is generally used by connecting the semiconductor element and the lead located at the bent portion with a wire. The connection with the parts can be easily performed. In addition, since the lead portion is formed on the upper surface of the bent portion, the difference in height between the semiconductor element and the lead portion is small. Therefore, the movement amount of the capillary of the wire bonding apparatus can be reduced and the wire bonding can be performed efficiently. Processing can be performed.

Further, according to the invention of claim 8, since the bent portion is supported by the element mounting portion by the convex portion, even if the ultrasonic welding method is used as the wire bonding process, the bent portion is However, it is possible to reliably perform ultrasonic bonding without generating unnecessary vibration, and it is possible to improve the reliability of the wire bonding process.

According to the ninth aspect of the invention, the semiconductor element and the lead section are connected by a simple process such as thermocompression bonding by connecting the semiconductor element and the lead section located at the bent section with a TAB wire. Can be connected. According to the tenth aspect of the present invention, the semiconductor device according to the present invention is provided with the BG by using the bump as the external connection terminal.
The semiconductor device can be used in a state equivalent to that of the A type semiconductor device. Therefore, the number of terminals can be increased without considering the deformation of the external connection terminals, and the mountability can be improved.

According to the eleventh aspect of the present invention, in the board forming step, the through hole forming step and the step of laminating a plurality of boards required in the conventional printed board forming step of the BGA type semiconductor device are performed. Etc. are unnecessary, and the substrate can be easily formed. Further, since the board bending step is simply an operation of bending the peripheral portion of the board inward so that the lead member is located outside, the board bending operation can be easily performed. it can.

According to the twelfth aspect of the invention, in the substrate bending step, the substrate is bent by press working, so that the semiconductor device substrate can be easily and accurately processed, and automation is achieved. It is also possible to improve the efficiency of substrate bending processing.

According to the invention described in claim 13, the lead shaping step is performed after the board forming step and before the board bending step to shape the lead portion into a predetermined pattern. Since the patterning of the lead portion can be performed in the flat plate state before the substrate is bent, the resist material for patterning and the etching process can be easily performed.

According to the fourteenth aspect of the invention, in the resin encapsulation step, the encapsulation resin is loaded on the semiconductor device substrate by potting, so that the encapsulation is performed without the need for a complicated mold. Filling with the stop resin can be performed. Further, since the bent portion has a function as a flow stop for the sealing resin, the semiconductor element can be reliably resin-sealed. In addition, productivity can be improved by loading the semiconductor device substrate by transfer molding. Even when the transfer mold is used, a complicated mold is not required.

According to the fifteenth aspect of the present invention, the lead portion can be pulled out from the connection position with the semiconductor element to the formation position of the external connection terminal by simply bending the substrate. Product cost can be reduced compared to conventional multi-layer wiring printed circuit boards,
Further, since it is not necessary to provide an electrode in which formation of a through hole or the like is troublesome, a semiconductor device substrate can be easily manufactured.

Further, according to the seventeenth aspect of the present invention, the base portion can be used as the lead portion. Therefore, the base portion can be used as the wiring in addition to the lead portion, so that the semiconductor element can be connected to the external connection terminal. It is possible to improve the degree of freedom in arranging all the wiring.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device that is a first embodiment of the present invention.

FIG. 2 is a sectional view of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a sectional view of a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a sectional view showing a substrate used in a semiconductor device which is a third embodiment of the present invention.

FIG. 5 is a sectional view of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 6 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention.

FIG. 7 is a sectional view of a semiconductor device according to a sixth embodiment of the present invention.

FIG. 8 is a sectional view showing a substrate used for a semiconductor device according to a sixth embodiment of the present invention.

FIG. 9 is a perspective view showing a state in which the semiconductor device according to the first embodiment of the present invention is mounted on a mounting board.

FIG. 10 is a diagram for explaining a substrate forming step.

FIG. 11 is a diagram for explaining a substrate forming process.

FIG. 12 is a diagram for explaining a substrate bending step.

FIG. 13 is a diagram for explaining a substrate bending step.

FIG. 14 is a diagram illustrating an element mounting process.

FIG. 15 is a diagram for explaining a connecting step.

FIG. 16 is a diagram showing a semiconductor device in which a lead portion having a land portion is arranged on a side portion of a bent portion.

FIG. 17 is a first semiconductor device according to a first embodiment of the present invention.
It is sectional drawing which shows a modification.

FIG. 18 is a second semiconductor device according to the first embodiment of the present invention.
It is sectional drawing which shows a modification.

FIG. 19 is a first semiconductor device according to a second embodiment of the present invention.
It is sectional drawing which shows a modification.

FIG. 20 is a second semiconductor device according to a second embodiment of the present invention.
It is sectional drawing which shows a modification.

FIG. 21 is a first semiconductor device according to a third embodiment of the present invention.
It is sectional drawing which shows a modification.

FIG. 22 is a second semiconductor device according to a third embodiment of the present invention.
It is sectional drawing which shows a modification.

FIG. 23 is a diagram showing an example of a conventional semiconductor device.

[Explanation of symbols]

20, 20A, 20B, 20C, 40, 40A, 40
B, 50, 60, 60A, 60B, 70, 80 Semiconductor device 21 Semiconductor element 22 Solder bump 23, 23A, 23B Sealing resin 24, 24A, 52, 61, 61A, 71, 81 Semiconductor device substrate 25, 53, 82 substrate 26, 83 base portion 27 insulating portion 28 lead portion 29, 29A bent portion 30 upper portion 31 side portion 32 element mounting portion 33 gap 36, 74, 75 wire 37 mounting substrate 38 electrode portion 39 land portion 41 TAB wire 42 bump 51 convex part 62 dimple 72, 73 base connecting part

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Internal reference number FI Technical indication location H01L 23/36 (72) Inventor Ichiro Yamaguchi 1015 Ueodaanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Limited (72) Inventor Kazuhiko Mitobe 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor, Kiyomi Hayashi, 1015, Kamikodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor, Kouki Otake Kanagawa 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Japan Within Fujitsu Limited (72) Inventor Susumu Abe No. 1 Nishigaoka, Murata, Shibata-gun, Miyagi Prefecture In Miyagi Electronics Limited (72) Inventor Junichi Kasai 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Masao Sakuma Kanagawa 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Japan Within Fujitsu Automation Limited (72) Inventor Yoshimi Suzuki 1015 Kamiotanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Automation Limited (72) Inventor Yasuhiro Shinma Nakahara-ku, Kawasaki-shi, Kanagawa 1015 Kamiodanaka, Fujitsu Automation Limited

Claims (18)

[Claims] 1. A semiconductor element, a semiconductor device substrate having an element mounting portion on which the semiconductor element is mounted, a semiconductor device substrate formed on the semiconductor device substrate, electrically connected to the semiconductor element, and mounted at the time of mounting. A semiconductor device comprising: an external connection terminal connected to an external electrode; and a sealing resin for sealing the semiconductor element, wherein the semiconductor device substrate is formed with a foldable base portion and the base portion. And a lead portion for electrically connecting the semiconductor element and the external connection terminal to each other, and at the periphery of the substrate, the substrate is bent and formed so that the lead portion is located outside. A semiconductor device having a structure in which a curved portion is formed. 2. The semiconductor device according to claim 1, wherein a gap is formed between the bent portion and the element mounting portion. 3. The semiconductor device according to claim 1, wherein the base portion is made of a highly heat conductive material. 4. The base portion is formed of a conductive material, an insulating layer is formed between the base portion and the lead portion, and the semiconductor element and the base portion are electrically connected. The semiconductor device according to any one of claims 1 to 3. 5. The semiconductor device according to claim 1, wherein an uneven portion is formed on a surface of the base portion different from a surface on which the lead portion is arranged. 6. The semiconductor device according to claim 1, wherein the base portion is formed of a metal material. 7. The semiconductor device according to claim 1, wherein the semiconductor element and the lead portion located at the bent portion are connected by a wire. 8. A convex portion is formed on an outer peripheral edge portion of the base portion,
8. The semiconductor device according to claim 7, wherein the convex portion is in contact with the element mounting portion when the substrate is bent. 9. The semiconductor device according to claim 1, wherein the semiconductor element and the lead portion located at the bent portion are connected by a TAB (Tape Automated Bonding) wire. 10. The semiconductor device according to claim 1, wherein a bump is used as the external connection terminal. 11. A substrate forming step of forming a substrate by forming a lead portion on a bendable base portion, and a peripheral portion of the substrate formed by the substrate forming step so that the lead portion is located outside. A substrate bending step of forming a semiconductor device substrate by forming an element mounting portion and a bent portion by forming a bending inside, and an element mounting for mounting a semiconductor chip on the element mounting portion of the semiconductor device substrate. A step of electrically connecting the semiconductor chip mounted on the element mounting portion and a lead portion located at the bent portion, and filling the semiconductor device substrate with a sealing resin. Manufacturing a semiconductor device, comprising: a resin sealing step of resin-sealing a semiconductor element; and an external connection terminal forming step of forming an external connection terminal on the lead portion formed on the semiconductor device substrate. Method 12. The method of manufacturing a semiconductor device according to claim 11, wherein the substrate is bent by pressing in the substrate bending step. 13. A lead shaping step of shaping the lead portion into a predetermined pattern after performing the substrate forming step and before performing the substrate bending step.
Or the method of manufacturing a semiconductor device according to item 12; 14. The semiconductor device according to claim 11, wherein in the resin encapsulating step, the encapsulating resin is loaded on the semiconductor device substrate by potting or transfer molding. Production method. 15. A substrate comprising a foldable base portion and a lead portion formed on the base portion and electrically connected to a mounted semiconductor element, the lead portion being provided outside. A semiconductor device substrate having a structure in which a bent portion is formed at a peripheral edge portion by bending the substrate so as to be positioned. 16. The substrate for a semiconductor device according to claim 15, wherein the base portion is made of a highly heat conductive material. 17. The substrate for a semiconductor device according to claim 15, wherein the base portion is formed of a conductive material and an insulating layer is formed between the base portion and the lead portion. 18. The semiconductor device according to claim 14, wherein an uneven portion is formed on a surface of the base portion different from a surface on which the lead portion is provided.