JPH08148104A - Ion source device - Google Patents
Ion source deviceInfo
- Publication number
- JPH08148104A JPH08148104A JP30982094A JP30982094A JPH08148104A JP H08148104 A JPH08148104 A JP H08148104A JP 30982094 A JP30982094 A JP 30982094A JP 30982094 A JP30982094 A JP 30982094A JP H08148104 A JPH08148104 A JP H08148104A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- source device
- cooling pipe
- ion source
- water cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電極の熱歪みをなくす
るようにした,IBS装置,IVD装置等に用いるイオ
ン源装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion source device used in an IBS device, an IVD device, etc., in which thermal distortion of electrodes is eliminated.
【0002】[0002]
【従来の技術】従来のこの種イオン源装置は、図3及び
図4に示すようになっている。それらの図において、1
は容器、2は容器1により形成されたプラズマ室、3は
容器1内の片側に絶縁支持体4を介して導入されたフィ
ラメントであり、フィラメント電源により高温に加熱さ
れ、熱電子を放出する。5は容器1の片側に形成された
ガス導入口であり、所要の種類及び量のガスがガス導入
口5からプラズマ室2に導入される。2. Description of the Related Art A conventional ion source device of this kind is shown in FIGS. In those figures, 1
Is a container, 2 is a plasma chamber formed by the container 1, and 3 is a filament introduced into one side of the container 1 through an insulating support 4, and is heated to a high temperature by a filament power source to emit thermoelectrons. Reference numeral 5 denotes a gas introduction port formed on one side of the container 1, and a gas of a required type and amount is introduced into the plasma chamber 2 from the gas introduction port 5.
【0003】6は容器1のフィラメント3に対向した位
置の開口に設けられた引出電極であり、加速電極7,減
速電極8,接地電極9からなり、各電極7,8,9は絶
縁物を介して支持されている。10は容器1の外面に配
列された複数個のマグネットであり、隣接するマグネッ
ト10の極性が異なり、カスプ磁場を形成する。Reference numeral 6 denotes an extraction electrode provided in an opening at a position facing the filament 3 of the container 1, and comprises an acceleration electrode 7, a deceleration electrode 8 and a ground electrode 9, and each electrode 7, 8, 9 is made of an insulator. Is supported through. Reference numeral 10 denotes a plurality of magnets arranged on the outer surface of the container 1, and adjacent magnets 10 have different polarities to form a cusp magnetic field.
【0004】11は各電極7,8,9に形成された多数
の孔、12は例えば加速電極7のプラズマ室2側の面に
形成された2本の膨出部、13は膨出部12の溝14に
埋め込まれた水冷パイプ、15は水冷パイプ13を覆
い,膨出部12に装着された長尺の蓋板である。Reference numeral 11 denotes a large number of holes formed in each of the electrodes 7, 8 and 9, reference numeral 12 denotes two bulging portions formed on the surface of the acceleration electrode 7 on the plasma chamber 2 side, and reference numeral 13 denotes a bulging portion 12. Reference numeral 15 denotes a water-cooling pipe embedded in the groove 14, and reference numeral 15 denotes a long lid plate that covers the water-cooling pipe 13 and is attached to the bulging portion 12.
【0005】そして、フィラメント3からの熱電子が容
器1との間で加速され、ガス導入口5からのガスと衝突
し、プラズマ16が生成し、このプラズマ16が各マグ
ネット10によるカスプ磁場により、容器1の中央部に
閉じ込められ、引出電極6により孔11を通ってイオン
ビームが引き出される。The thermoelectrons from the filament 3 are accelerated with the container 1 and collide with the gas from the gas inlet 5, plasma 16 is generated, and the plasma 16 is generated by the cusp magnetic field of each magnet 10. The ion beam is confined in the center of the container 1 and the ion beam is extracted through the hole 11 by the extraction electrode 6.
【0006】この時、プラズマ16に接する加速電極7
は、プラズマ16からのスパッタを受け、また、プラズ
マ16に直接接しない減速電極8,接地電極9も、引き
出されるイオンビームの一部によりスパッタされるた
め、各電極7,8,9にかなりの熱が流入する。そこ
で、前記水冷パイプ13により流入した熱を吸収し、各
電極7,8,9の温度上昇を防ぎ、熱歪みによる各電極
7,8,9の孔11のずれを防止している。At this time, the acceleration electrode 7 in contact with the plasma 16
Is sputtered from the plasma 16, and the deceleration electrode 8 and the ground electrode 9 which are not in direct contact with the plasma 16 are also sputtered by a part of the extracted ion beam, so that the electrodes 7, 8 and 9 are considerably sputtered. Heat flows in. Thus, the water-cooled pipe 13 absorbs the inflowing heat to prevent the temperature rise of the electrodes 7, 8, 9 and prevent the holes 11 of the electrodes 7, 8, 9 from being displaced due to thermal strain.
【0007】[0007]
【発明が解決しようとする課題】従来の前記水冷パイプ
13による温度上昇防止手段の場合、プラズマ密度が高
くなったり、或いはイオンビーム量が大きくなると、あ
る程度の温度上昇が避けられず、電極に熱歪みが起こ
り、水冷パイプ13の位置を境にして電極が反り、各電
極の孔にずれを生じ、とくに、電極の面積が大きい場合
や電極の厚みが薄い場合に電極が反り、良質のイオンビ
ームを引き出せないという問題点がある。本発明は、前
記の点に留意し、電極の反りを防止し、良質のイオンビ
ームを引き出させるイオン源装置を提供することを目的
とする。In the case of the conventional temperature rise prevention means using the water-cooled pipe 13, when the plasma density becomes high or the ion beam amount becomes large, a certain temperature rise cannot be avoided and heat is applied to the electrodes. Distortion occurs, the electrodes warp with the position of the water cooling pipe 13 as a boundary, and the holes of each electrode are displaced. Especially when the area of the electrode is large or the thickness of the electrode is thin, the electrode warps, and a high-quality ion beam There is a problem that you can not pull out. The present invention has been made in consideration of the above points, and an object of the present invention is to provide an ion source device capable of preventing a warp of an electrode and extracting a high quality ion beam.
【0008】[0008]
【課題を解決するための手段】前記課題を解決するため
に、本発明のイオン源装置は、プラズマ室のプラズマか
ら引出電極によりイオンビームを引き出し、前記電極に
水冷パイプを設けたイオン源装置において、前記電極の
面に前記水冷パイプに交差する梁を形成したものであ
る。In order to solve the above problems, the ion source device of the present invention is an ion source device in which an ion beam is extracted from plasma in a plasma chamber by an extraction electrode, and a water cooling pipe is provided in the electrode. A beam intersecting with the water cooling pipe is formed on the surface of the electrode.
【0009】[0009]
【作用】前記のように構成された本発明のイオン源装置
は、引出電極の面に水冷パイプに交差する梁が形成され
ているため、水冷パイプによる冷却で充分に電極の温度
上昇が防ぐことができずに、熱流入があっても、電極の
歪み,反りが起こらず、各電極の孔の位置がずれず、良
質のイオンビームを引き出すことができる。In the ion source device of the present invention constructed as described above, since the beam intersecting the water cooling pipe is formed on the surface of the extraction electrode, the temperature rise of the electrode can be sufficiently prevented by cooling with the water cooling pipe. Therefore, even if heat is introduced, the electrodes are not distorted or warped, the holes of the electrodes are not displaced, and a high-quality ion beam can be extracted.
【0010】[0010]
【実施例】実施例について図1及び図2を参照して説明
する。それらの図において図3及び図4と同一符号は同
一もしくは相当するものを示す。まず、1実施例を示し
た図1において、図4と異なる点は、加速電極7のプラ
ズマ室2側の面に、水冷パイプ13に直交する方向に、
梁17を溶接,ろう付け或いはねじ止め等の手段により
固定したものである。EXAMPLES Examples will be described with reference to FIGS. 1 and 2. In these figures, the same reference numerals as those in FIGS. 3 and 4 indicate the same or corresponding elements. First, in FIG. 1 showing one embodiment, a point different from FIG. 4 is that the surface of the acceleration electrode 7 on the plasma chamber 2 side is orthogonal to the water cooling pipe 13.
The beam 17 is fixed by means such as welding, brazing or screwing.
【0011】従って、電極7に流入した熱により、歪
み,反りを生じようとしても、梁17により歪み,反り
が防止される。つぎに、他の実施例を示した図2は、図
1の梁17を電極7と一体物として形成したものであ
り、この場合、図1の電極7と梁17を別個に作り、電
極7に梁17を溶接,ろう付けにより固定する時に生ず
る熱歪みが発生せず、熱歪みを除去する等の処置が不要
となり、梁17を安価に形成することができる。なお、
梁17は水冷パイプ13に対し、直交する方向だけでな
く、斜めに形成してもよく、また、1本に限らず、複数
本を交差するよう形成してもよい。また、梁17は、加
速電極7のほか、減速電極8または接地電極9にも形成
してもよく、或いは各電極7,8,9のうち、いずれか
の電極のみに形成してもよい。Therefore, even if the heat flowing into the electrode 7 causes distortion or warpage, the beam 17 prevents the distortion or warpage. Next, FIG. 2 showing another embodiment is one in which the beam 17 of FIG. 1 is formed integrally with the electrode 7. In this case, the electrode 7 and the beam 17 of FIG. The heat distortion that occurs when the beam 17 is fixed by welding or brazing does not occur, and measures such as removing the heat distortion are unnecessary, and the beam 17 can be formed at low cost. In addition,
The beam 17 may be formed not only in a direction orthogonal to the water-cooling pipe 13 but also obliquely, and may be formed not only in one line but also in a plurality of lines. The beam 17 may be formed not only on the acceleration electrode 7 but also on the deceleration electrode 8 or the ground electrode 9, or may be formed only on any one of the electrodes 7, 8, 9.
【0012】[0012]
【発明の効果】本発明は、以上説明したように構成され
ているので、以下に記載する効果を奏する。本発明のイ
オン源装置は、引出電極の面に水冷パイプ13に交差す
る梁17が形成されているため、水冷パイプ13による
冷却で充分に電極の温度上昇が防ぐことができずに熱流
入があっても、電極の歪み,反りが起こらず、各電極の
孔11の位置ずれが防止でき、良質のイオンビームを引
き出すことができる。Since the present invention is configured as described above, it has the following effects. In the ion source device of the present invention, since the beam 17 that intersects the water cooling pipe 13 is formed on the surface of the extraction electrode, cooling with the water cooling pipe 13 cannot sufficiently prevent the temperature rise of the electrode, and the heat inflow does not occur. Even if there is, the electrode is not distorted or warped, the position shift of the hole 11 of each electrode can be prevented, and a high-quality ion beam can be extracted.
【図1】A,B,Cは本発明の1実施例の正面図,切断
下面図,切断側面図である。1A, 1B and 1C are a front view, a cut bottom view and a cut side view of an embodiment of the present invention.
【図2】A,B,Cは本発明の他の実施例の正面図,切
断下面図,切断側面図である。2A, 2B and 2C are a front view, a cut bottom view and a cut side view of another embodiment of the present invention.
【図3】従来のイオン源装置の切断側面図である。FIG. 3 is a cut side view of a conventional ion source device.
【図4】A,Bは図3の電極の正面図,切断下面図であ
る。4A and 4B are a front view and a cut bottom view of the electrode of FIG.
2 プラズマ室 6 引出電極 7 加速電極 13 水冷パイプ 16 プラズマ 17 梁 2 Plasma chamber 6 Extraction electrode 7 Accelerating electrode 13 Water cooling pipe 16 Plasma 17 Beam
Claims (1)
りイオンビームを引き出し、前記電極に水冷パイプを設
けたイオン源装置において、 前記電極の面に前記水冷パイプに交差する梁を形成した
イオン源装置。1. An ion source device in which an ion beam is extracted from plasma in a plasma chamber by an extraction electrode and a water-cooled pipe is provided on the electrode, wherein a beam intersecting the water-cooled pipe is formed on a surface of the electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30982094A JPH08148104A (en) | 1994-11-18 | 1994-11-18 | Ion source device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30982094A JPH08148104A (en) | 1994-11-18 | 1994-11-18 | Ion source device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08148104A true JPH08148104A (en) | 1996-06-07 |
Family
ID=17997656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30982094A Pending JPH08148104A (en) | 1994-11-18 | 1994-11-18 | Ion source device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08148104A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683143A (en) * | 2011-03-15 | 2012-09-19 | 日新离子机器株式会社 | Slit electrode and charged particle beam generation device having slit electrode |
JP2016207480A (en) * | 2015-04-23 | 2016-12-08 | 日新電機株式会社 | Charged particle source |
-
1994
- 1994-11-18 JP JP30982094A patent/JPH08148104A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102683143A (en) * | 2011-03-15 | 2012-09-19 | 日新离子机器株式会社 | Slit electrode and charged particle beam generation device having slit electrode |
JP2016207480A (en) * | 2015-04-23 | 2016-12-08 | 日新電機株式会社 | Charged particle source |
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