JPH08148086A - Connecting method for sputtering target material - Google Patents

Abstract

PURPOSE: To improve wettability and adhesiveness so as to endure use in a high vacuum condition by connecting by soldering a target member and a cooling member formed with a film of Ti, Pt, Au and Ge. CONSTITUTION: A film of Ti, Pt, Au and Ge having a 0.05 to 1.00μm thickness is successively applied to a connection-difficult target member 1 and cooling member 2. Next in connection surfaces of this target member 1 and cooling member 2, a solder foil 3 is arranged and heated to connect the members to each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for joining sputter-ken target materials, and particularly to brazing a target material of a Co-based difficult-to-join material and a copper or copper alloy or a stainless steel cooling member which is a difficult-to-join material. On how to do.

[0002]

2. Description of the Related Art Conventionally, a cooling member is generally made of copper having a good thermal conductivity, and copper has a property of being very easily wet by any brazing material. Further, since the surface of copper can be easily modified by plating, it is necessary to consider the joining only when the target material is a difficult joining material.

Since copper and the target material have different coefficients of thermal expansion, the target material in the cooling process of the brazing is disclosed in JP-A 1-262088, JP-A 1-262089, and JP-A 2-11759. Also, the brazing is performed while heating the cooling member to the same contraction amount and warping caused by a difference in thermal expansion, and a warp corresponding to the warp amount in the opposite direction.

However, it is difficult to control the temperature, and
It is practically difficult to give an appropriate warp in the opposite direction. or,
There is no bonding method that can be used even under high vacuum between the Co-Nb-Zr target and the SUS cooling member.

[0005]

The sputtering target material is usually bonded to a cooling member made of copper and a copper alloy, mounted on a sputtering apparatus, and water-cooled before use. However, some of the sputtering material targets include
From the viewpoint of preventing rusting due to water cooling from the component system, a difficult-to-join material such as stainless steel may be used as the cooling member instead of copper. Stainless steels are generally hard to wet with most brazes and difficult to join.

Cr-based targets, Nb-based targets and NiO targets are also difficult to wet with the brazing material. Therefore, unless a special flux is used, the brazing filler metal does not spread. However, when the above-mentioned flux is used for joining the sputtering target materials used in a high vacuum state, harmful gas is generated, which hinders sputtering.

Further, there is a method of vapor-depositing Ti, Pt and Au on the target and the cooling member for surface modification, but it is necessary to carry out sputtering under a higher vacuum in order to stabilize the composition of the formed film. is there.

As described above, according to the conventional method, Au and In
Although the solder of the system had sufficient wettability and adhesion, the flux was not used under high vacuum, and the wettability and adhesion had to be further improved.

An object of the present invention is to provide a method for joining a sputtering target material, which is improved in wettability and adhesion and is resistant to use in a high vacuum state, in connection with a difficult-to-join target material of a sputtering material and a difficult-to-join cooling member. To do.

[0010]

[Means for Solving the Problems] Ti, Pt, Au, and Ge are vapor-deposited on a Co-based or Nb-based target, a NiO target, and a stainless steel cooling member, which are difficult-to-join materials.
Modify the surface.

Further, the SUS material and the target material, which are hard to be wetted by the brazing material, are very easily wettable by Ti, Pt, Au and Ge.
A film is formed and surface modification is performed.

As described above, vapor-deposited films of Ti, Pt, Au, and Ge are formed on both the difficult-to-join target material and the difficult-to-join cooling member, heated with In-based solder, and then air-cooled for bonding.

[0013]

[Operation] Co-based and Nb-based targets that are difficult to bond, N
Ti, P on the iO target and stainless steel cooling member
Vapor deposition of t, Au and Ge is performed to modify the surface. The thickness of these coatings is preferably 0.05 μm to 1.00 μm.

According to this method, since no special flux is used, no harmful gas is generated even in a high vacuum state. By forming a Ti, Pt, Au and Ge film that is extremely wettable on the SUS material and the target material that are hard to be wetted by the brazing material and performing surface modification, it is possible to easily perform brazing joining having a higher adhesion strength than the conventional one. As described above, a vapor deposition film of Ti, Pt, Au, and Ge is formed on both the difficult-to-join target material and the difficult-to-join cooling member, and the In-based solder is used. Join with.

At this time, Ge in the uppermost film undergoes a eutectic reaction with Au to become Au-Ge. In addition, since the In-based solder also contains a small amount of Ge, it is very easy to get wet,
The wettability of Au and In-based solder is improved as compared with the conventional method through e, and bonding with strong adhesion can be performed.

[0016]

[Example] Ti, Pt,
The vapor deposition film thickness of Au and Ge is 0.1 μm, 0.2 μm, and 0.2 μm.
Vapor deposition was performed at 2 μm and 0.1 μm, and a tape peeling test was performed. As a result, no peeling was observed.

Similarly, a Co-Nb-Zr target is subjected to T
Vapor deposition of i, Pt, Au and Ge was performed and a tape peeling test was performed, but peeling was not observed at all.

Further, conventional Cr, Ni and Au and Ti, P
When the adhesion strength between t and Au and the SUS material was evaluated by a die shear test, the adhesion strength of the present invention was 1.
Values of 5 to 2 were obtained.

Preliminary test results, SUS and Co-Nb
-Confirm that there is no problem with the vapor deposition property on the Zr target,
It was confirmed that the strength was higher than before.

Next, φ130 and φ70 × 12t SUS3
04 A cooling member and a φ240 × 6t Co-Nb-Zr target were joined.

Since the cooling member of the SUS304 material has a ring shape, a vapor deposition mask is prepared so that only that portion is vapor-deposited, and Ti, Pt, Au and Ge are each 0.1 μm,
Evaporated films were formed with a thickness of 0.2 μm, 0.2 μm and 0.1 μm.

Next, a vapor deposition mask is formed on the target material so that it is vapor-deposited on the joint surface of the ring of SUS304 material, and T
A vapor deposition film was formed so that i, Pt, Au and Ge had the same film thickness as the SUS304 material.

After vapor deposition, an In-based solder foil was placed on the bonding surface of the target and heated to 180 to 200 ° C., and the In-based solder welded on the bonding surface was thinly spread on the entire surface of the target. Similarly, In-based solder was thinly spread on the entire surface of the cooling member made of SUS304 material. Next, between the target and the joining surface of the cooling member made of SUS304 material, In-based solder foils are laminated so that there is no displacement and clipped, and a weight of about 10 kg is placed, and the ambient temperature is 200 to 230 ° C. It was placed in the furnace for about 30 minutes.

As a result of joining in this way, joining without peeling or deformation could be carried out. As a result of the radiation inspection of the joined product, the area ratio of the joined portion was 95% or more, which was good.

The SUS material, which has been difficult to bond until now, and Co
The joining of the -Nb-Zr target materials could be easily performed at low cost without using special jigs and tools.

[0026]

According to the present invention, by depositing Ti, Pt, Au and Ge on the target and the cooling member,
With respect to joining of a difficult-to-join target material of a sputtering material and a difficult-to-join cooling member, it is possible to provide a method of joining a sputtering target material, which has improved wettability and adhesion and can be used in a high vacuum state.

[Brief description of drawings]

FIG. 1 shows a stack of respective members before joining a target material and a cooling member according to the present invention.

[Explanation of symbols]

1 ... Co-Nb-Zr target material, 2 ... Ti, Pt,
Au and Ge vapor deposition film, 3 ... brazing material, 4 ... cooling member.

Claims (1)

[Claims] 1. A method of joining a sputtering target material, which comprises joining a target material to a cooling member using solder, wherein Ti, Pt,
A method of joining a sputtering target material, comprising sequentially applying a coating of Au and Ge and joining the coating to the solder.