JPH08139126A - Semiconductor device - Google Patents

Abstract

PURPOSE: To obtain a semiconductor device in which the breaking strength at the border of a lead and a slit, the durability of unit TCP and the stress resistance after soldering are enhanced by modifying the square profile of a slit at an OLB part from square to zigzag or curved shape. CONSTITUTION: A film base member is coated, on the surface thereof, with adhesive and a cover film is applied thereto. It is then cut into a tape having predetermined width and punched (boring) to make a device hole or a slit 8 for OLB in the film base member. A Cu foil pattern 9 is then laminated on the film and coated with a resist which is subsequently subject to masking with a circuit pattern and etched to constitute a circuit. Since a curved slit 8 is employed, stress is not concentrated to the linear border of the slit but distributed thus enhancing the stress resistance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device used in general electronic equipment for soldering a tape carrier package (TCP) and a substrate. For example, it is applied to a calculator, an electronic notebook, a portable information terminal, a word processor, a personal computer and the like.

[0002]

2. Description of the Related Art T is a mounting technology for electronic devices and devices.
There is AB (Tape Automated Bonding) technology. This TA
For B technology, "Introduction to TAB technology" (Kenzo Hatada,
Industrial Research Institute Co., Ltd., issued January 25, 1990). Hereinafter, based on this document, the outline of the part relating to the present invention will be described.

ICs and LSIs completed by a semiconductor process are in a state of a graphic wafer, and an electric test is performed on this wafer to see if it exhibits a predetermined characteristic.
Therefore, a large number of individual ICs, Ls formed on the wafer
The SI is provided with electrode terminals called pads.
When the electrical inspection on the wafer is completed, each IC, LSI is divided into individual ICs, LSIs by a dicer (cutting machine), which is called a die or a chip.

If the chip is left as it is, IC, LS
Since I cannot be mounted in equipment, it is necessary to remake this chip so that it can be easily mounted in equipment. This is the packaging technology, and what is shaped is called a package. IC,
Wire bonding method, T
There are three methods, AB method and FC (flip chip) method.

In order to electrically connect the pad on the chip and the external electrode (lead), a medium such as a wire or a bump is required. The TAB method requires bumps between the chip, the pad, and the film lead. The TAB technology process includes three processes, that is, a film carrier manufacturing process, a bump forming process, and a packaging process.

Manufacturing process of film carrier: base material film (polyimide, glass-filled epoxy, BT resin, polyester material with a thickness of 75 to 125 μm) and copper foil (18 to 3)
5 μm thick) is prepared, and sprocket holes and device holes are first formed in the film by punching using a die.
Next, attach the copper foil to the perforated film (pre-coated with adhesive) while pressing it with a heat roller,
Photoresist is applied to both surfaces, and mask exposure, development and etching are performed to form leads protruding from the holes. The unnecessary photoresist is removed, and the lead surface is plated with Sn, Au (underlying Ni plating) and solder (underlying Ni plating) to complete the film carrier process.

Bump forming step: There are a method of forming bumps on a chip and a transfer bump method of forming bumps on the lead side. Package process: ILB (Inner Lead B
The onding) step is a step of connecting the lead and the electrode of the LSI chip via the bump. When all of this packaging process is completed, it is mounted on the circuit board. This step is O
It is called the LB (Outer Lead Bonding) process.

The characteristics of the TAB technology package are as follows. Electrical characteristics can be inspected on the tape. By utilizing the flexibility of the tape, it is possible to perform bending and three-dimensional mounting. Multiple chips can be mounted on the same tape. A wiring pattern is formed on the tape and can be used as a HIC (Hybrid Integrated Circuit) as a circuit board. A thin and small package can be obtained.

As described above, the process of connecting the leads of the film carrier and the electrodes of the LSI chip via the bumps is called inner lead bonding (ILB). Basically, by applying pressure from the lead of the film carrier with a heated bonding tool,
The materials are joined by alloying or thermocompression bonding. Further, the process of connecting the outer leads of the film carrier and the electrodes of the circuit board is called OLB. The outer lead of the TAB package is
Pure copper is very soft, and the leads are easily deformed by light stress.

A known document describing a conventional semiconductor device is, for example, Japanese Patent Laid-Open Publication No. 54-124675. This publication relates to bonding using a so-called film carrier in connecting a semiconductor element and an external electrode, and is a lead in a process of connecting a lead of a film carrier and an external electrode (outer lead bonding: OLB) in high-density mounting. The purpose is to eliminate the deformation, shorten the alignment time, and automate the OLB process. A plurality of leads, each of which has a predetermined portion except the tip portion, is supported on the first insulating film, and one of the leads. The semiconductor device is connected to an end via a protruding electrode, and a second insulating film is provided on the other end of the plurality of leads.
The leads between the insulating films and the external electrodes are electrically connected and fixed. That is, TCP OLB
Slit, inner lead bonding (ILB)
The slit of the part has a square shape, and the boundary line between the lead and the base material is aligned.

In Japanese Utility Model Publication No. 6-12614, an intermittent pattern is formed on a film substrate corresponding to an intermediate portion of a plurality of connecting leads made of a conductive metal foil, one end of which is connected to each electrode of an integrated circuit chip. Or provide a continuous opening,
The plurality of connection leads can be bent along the opening. That is, a bending slit is described, the bending slit has a square shape, and the boundary line between the lead and the base material is aligned.

FIGS. 16 and 17 (a) and (b) are views showing a conventional TCP. FIG. 16 is a sectional view in which the TCP is soldered and connected to a substrate, FIG. 17 (a) is a plan view, and FIG. 17B is a partially enlarged view of FIG. 17A. In the figure, 21 is a polyimide base material (film base material), 22 is a substrate, and 23 is a substrate C.
u foil pattern, 24 is device hole, 25 is LSI
(Large Scale Integrated Circuit)
Chip, 26 is sealing resin (backing resin), 27 is OLB
A bonding tool, 28 is solder, 29 is an OLB slit portion, and 30 is a Cu foil pattern.

The surface of the polyimide film as the film base material 21 is coated with an adhesive, a cover film is attached thereto, and the surface of the film substrate 21 is protected by the cover film. Then, after slitting into a tape having a predetermined width by slitting, slit punching (opening) is performed, and the device hole 24 or O is formed in the film base material 21.
A slit portion 29 for LB is provided. The Cu foil pattern 30 is adhesively fixed on the film by laminating.
After that, the device hole 24 and the slit portion 29 for OLB
The backing resin 26 is coated on. After that, the Cu foil pattern 30 is coated with a resist to mask the circuit pattern, and is etched to form a circuit. After that, the resist is removed and the backing resin is removed. afterwards,
A film carrier tape is completed by applying a solder resist and plating such as Sn plating on the Cu foil.

18 and 19 (a) and (b) are views showing another example of the conventional TCP. FIG. 18 shows the TCP as an LCD.
FIG. 19 is a cross-sectional view showing a state in which the upper part is connected and bent.
19A is a plan view of TCP, and FIG. 19B is FIG. 19A.
FIG. In the figure, 31 is an LCD (Liquid Cry)
stal Display: liquid crystal display), 32 is a slit portion for bending, and in addition, FIG. 16 and FIG.
The parts having the same operations as in (b) are designated by the same reference numerals. It can be created by forming the punching die of the bending slit portion 32 into a curved curved surface or a concave and convex shape and a smooth curved slit.

20 (a) to 20 (c) are views showing still another example of the conventional TCP. FIG. 20 (a) is a sectional view of a bent portion of the TCP, and FIG. 20 (b) is a view of the TCP. Plan view, FIG.
0 (c) is a partially enlarged view of FIG. 20 (b). 3 in the figure
3 is a polyimide resin, and in addition, FIG. 19 (a), (b)
The same reference numerals are attached to the parts having the same functions as. A polyimide resin 33 is applied to the bending slit portion 32. The polyimide resin 33 is formed by applying a solder resist that protects the Cu foil pattern to the bending slit portion 32 in a solder resist process.

FIGS. 21 and 22 (a) and 22 (b) are views showing still another example of the conventional TCP. FIG. 21 shows the conventional TC.
22A is a sectional view showing an ILB (inner lead bonding) portion of P, FIG. 22A is a plan view of TCP, and FIG. 22B is a partially enlarged view of FIG. 22A. In the figure, 34 is an inner lead, and in addition, FIGS. 18 and 19 (a), (b)
The same reference numerals are attached to the parts having the same functions as. In the device hole 24, the LSI 25 is located in the hole portion thereof, but since the electrodes are normally provided on the four sides of the LSI 25, the inner leads 34 are present on the four sides unlike the slit 32 described above.

[0017]

In the conventional semiconductor device as described above, the base material slit and the OLB lead are linear boundaries in the OLB portion of the TCP, and the boundaries of a plurality of leads are aligned. Therefore, when an external stress is applied in the TCP state and the state where the substrate is soldered and connected, the stress is concentrated on the boundary between the base material slit of the OLB part and the OLB lead, and the lead is easily broken on the boundary line of the base material slit. was there. Also, bend TCP
Also in the case of (1), if the base material and the lead are in a straight line boundary at the bending slit portion, stress is concentrated at the time of bending and breakage easily occurs on the boundary line. Further, in the ILB portion as well, since stress concentrates on the boundary line between the lead and the base material against external stress, there is a problem that breakage easily occurs.

The present invention has been made in view of such a situation, and by changing the slit shape of the outer lead bonding portion from the conventional square shape to the uneven shape and the curved shape,
An object of the present invention is to provide a semiconductor device in which the breaking strength at the boundary between the lead and the slit is increased, and the durability of the tape carrier package alone and the stress resistance after soldering are improved.

[0019]

In order to solve the above problems, the present invention provides (1) a lead for outer lead bonding (OLB) of a film carrier in a semiconductor device in which a tape carrier package and a substrate are soldered. Or a semiconductor device for soldering a tape carrier package and a substrate, the slit shape of the lead portion for outer lead bonding of the film carrier is provided. The semiconductor device has a film carrier in which the base material of the lead portion has a convex shape and the base material portion between the leads has a concave shape, or (3) in a semiconductor device in which a tape carrier package and a substrate are soldered, each boundary is It is formed in a semi-circular shape, the base material of the lead part is convex, and the base material part between the leads is concave. And having a film carrier having a curved and smooth slit, or (4) a lead exposure type bending of a foldable film carrier in a semiconductor device for soldering a tape carrier package and a substrate. In the slit part, the base material of the lead part has a convex shape, and the base material part between the leads has a concave shape, or (5)
In a semiconductor device for soldering a tape carrier package and a substrate, in a lead slit type bending slit portion of a foldable film carrier, a lead and a base material boundary between the leads are formed in a semicircular shape, and the base of the lead portion is formed. The material is convex and the base material between the leads is concave,
Having a film carrier having a curved and smooth slit, and (6) In (4) or (5), the lead of the film carrier capable of bending the slit is covered with a resin such as polyimide. It was installed in the slit of a tamono (flex type),
Alternatively, (7) in a semiconductor device in which a tape carrier package and a substrate are soldered, the base material of the lead portion has a convex shape at the slit of the inner lead bonding (ILB) of the film carrier, and the base material portion between the leads is Having a concave film carrier, or (8)
In a semiconductor device in which a tape carrier package and a substrate are soldered, the base material of the lead portion has a convex shape and the base material portion between the leads has a concave shape in the inner lead bonding slit of the film carrier. The boundary is formed in a semicircular shape, and is characterized by having a film carrier which is a curved and smooth slit.

[0020]

The semiconductor device of the present invention having the above structure is
(1) The length of the boundary side between the lead and the slit boundary is increased by making the base material slit of the OLB portion into a curved shape or an uneven shape,
While increasing strength, stress concentration is improved by dispersing stress concentration on a straight line against external stress. (2) By making the base material of the lead portion convex and the base material between the leads concave for each lead of the plurality of leads, the length of the boundary side is lengthened, the strength is increased, and the resistance to external stress is increased. The stress resistance is improved by dispersing the stress concentration from a straight line between the lead and the slit to the substrate side.

(3) For each lead of the plurality of leads, the base material of the lead part is formed in a semicircular shape at the boundary, the base material of the lead part is convex, and the base part between the leads is concave. The curved and smooth slits increase the length of the boundary side to increase the strength and improve stress resistance by dispersing stress concentration against external stress. (4) The length of the boundary side is increased by making the base material of the lead portion convex and the base material portion between the leads concave at the lead exposure type bending slit portion of the foldable film carrier. In addition to increasing strength, stress concentration is improved by dispersing stress concentration against external stress.

(5) In the bending slit portion of the lead exposure type of the foldable film carrier, the lead portion and the base material boundary between the leads are formed in a semicircular shape, and the base material of the lead portion is a convex shape, The base material of has a concave shape, and it has a curved and smooth slit,
By increasing the length of the boundary side and increasing the strength, the stress concentration due to external stress is dispersed in the concave portion of the base material to improve the stress resistance. (6) The stress resistance is improved by providing the lead of the film carrier capable of bending the slit of (4) in the slit portion of the one covered with the polyimide resin (flex type).

(7) The stress resistance is improved by providing the lead of the film carrier capable of bending the slit of (5) in the slit portion of the one covered with the polyimide resin (flex type). (8) In the slit of the ILB portion of the film carrier, by making the base material of the lead portion convex and making the base material portion between the leads concave, the length of the boundary side between the lead and the slit is increased and the strength is increased. In addition to increasing the stress, stress concentration can be improved by dispersing the stress concentration in a straight line against the external stress even on the substrate side.

(9) In the slit of the ILB part of the film carrier, the base material of the lead part is convex and the base material between the leads is concave for each lead, and the base material boundary is semicircular. By forming it and making it into a curved and smooth slit, the length of the boundary side between the lead and the slit is lengthened, the strength is increased and the concentration of stress in a straight line against external stress is dispersed to the substrate side. By improving the stress resistance.

[0025]

Embodiments will be described below with reference to the drawings. 1A, 1B and 2 are configuration diagrams for explaining an embodiment (embodiment 1) of a semiconductor device according to the present invention. FIG. 1A is a plan view of a TCP, and FIG. b) is Figure 1
FIG. 2A is a partially enlarged view, and FIG. 2 is a cross-sectional view in which the TCP is soldered and connected to the substrate. In the figure, 1 is a polyimide base material, 2 is a substrate, 3 is a substrate Cu foil pattern, 4 is a device hole,
5 is an LSI chip, 6 is a sealing resin, 7 is an OLB bonding tool, 8 is an OLB slit portion, 9 is a Cu foil pattern, and 10 is solder.

FIGS. 1 (a) and 1 (b) are views showing the OLB portion 8 in which the slit shape is curved. This curved slit can be formed in the film carrier manufacturing process by changing the slit punching die from a die for a conventional square slit to a die for making a curved slit. FIG. 14 is a flowchart showing the manufacturing process of the film carrier tape. Also, FIG.
5A to 5F are cross-sectional views of the film carrier tape during each manufacturing process.

First, the surface of the polyimide film as the film substrate 1 is coated with the adhesive 12 and the cover film 11 is attached, and the surface of the film substrate 1 is covered with the cover film 11 as shown in FIG. 15 (a). Protect with. Then, after being cut into a tape having a predetermined width by cutting, a slit punch (opening) is performed to
As shown in FIG. 5B, the film substrate 1 is provided with a device hole 4 and a slit portion 8 for OLB.

As shown in FIG. 15C, the Cu foil pattern 9 is adhered and fixed on the film by laminating. Then, as shown in FIG. 15D, the backing resin 14 is coated on the device hole 4 and the slit portion 8 for the OLB, and the resist 13 is coated on the Cu foil pattern 9 to mask the circuit pattern.
As shown in (e), a circuit is formed by etching. After that, the resist and the backing resin are removed. afterwards,
As shown in FIG. 15 (f), applying a solder resist,
The film carrier tape is completed by plating such as Sn plating on the Cu foil. In the slit punch (opening) step shown in FIG. 14, the device hole, the OLB slit, and the bending slit are formed by die punching to form the slit shown in FIG.

As described above, in the first embodiment, unlike the conventional linear slit, since the lead and the slit form a boundary with an oblique line, the length of the boundary side between the lead and the slit becomes long. As the length increases, the strength of the lead boundary portion increases. Further, when subjected to external stress such as bending, twisting, shearing, or pulling in a TCP state or in a state of being soldered and connected to a substrate, conventionally, stress is concentrated at the boundary between the base material slit and the lead arranged in a straight line. However, according to the present invention, since the slit has a curved shape, the stress is not concentrated on the slit boundary on a straight line and the stress is dispersed, so that the stress resistance is improved.

3 (a) and 3 (b) are configuration diagrams for explaining another embodiment (second embodiment) of the semiconductor device according to the present invention. FIG. 3 (a) is a plan view of the TCP and FIG. 3 (b) is FIG.
It is a partially expanded view of (a). Reference numbers in the figure refer to FIG.
It is the same as (a) and (b). Even when each lead has an uneven shape, it can be made by making the mold shape of the OLB portion so that each lead has an uneven shape.

As described above, in the second embodiment, the lead side base material has a convex shape and the inter-lead base material has a concave shape for each lead, so that the boundary side between the lead and the base material becomes long. For example, when the lead width is a mm, the length of the boundary side between the lead and the base material is a mm in the case of the conventional slit shape, but when the length of the uneven portion is b mm as in the present invention ( a + 2b) mm, which is a boundary side that is 2bmm longer. Further, when an external stress such as bending, twisting, shearing, or pulling is applied in a TCP state or a state of being soldered to a substrate, the stress is conventionally concentrated at the boundary between the base material slit and the lead arranged in a straight line. However, according to the present invention, the stress is improved because the stress is dispersed in the lead boundary portion and the inter-lead base material concave portion.

4 (a) and 4 (b) are configuration diagrams for explaining still another embodiment (third embodiment) of the semiconductor device according to the present invention. FIG. 4 (a) is a plan view of the TCP, FIG. 4B is a partially enlarged view of FIG. Reference numerals in the figure are the same as those in FIGS. 1 (a) and 1 (b). For each lead, the base material of the lead portion is formed in a semicircular shape at the boundary, the base material of the lead portion has a convex shape, and the base material portion between the leads has a concave shape,
Smooth curved slits can also be made by shaping the mold into that shape.

As described above, in the third embodiment, the multi-lead 1
For each lead, the base material of the lead portion is formed in a semicircular shape at the boundary, the base material of the lead portion is convex, and the base material portion between the leads is concave, so that the boundary side between the lead and the base material is become longer. For example, when the lead width is amm, and in the case of the conventional slit shape, the length of the boundary side between the lead and the base material slit is amm, but as in the present invention, a semicircle having a diameter of amm is alternately repeated. The length of the boundary side between the lead and the base material slit is (π / 2) a≈1.5
It will be 7 mm. That is, the boundary side length is about 1.6 times. Also, in the TCP state or in the state where it is soldered to the board,
When an external stress such as bending, twisting, shearing, or tension is applied, stress was concentrated at the boundary between the slit and the lead lined up in a straight line in the past. It Further, the stress resistance is further improved because the slit edge has a smooth curved shape.

5, FIG. 6 (a), (b) and FIG. 7 (a),
FIG. 5B is a configuration diagram for explaining still another embodiment (embodiments 4 and 5) of the semiconductor device according to the present invention. FIG. 5 shows the TCP of the embodiments 4 and 5 connected to an LCD and bent. 6A is a plan view of the TCP of Embodiment 4, FIG. 6B is a partially enlarged view of FIG. 6A, and FIG. 7A is a sectional view showing a state.
Is a plan view of the TCP of Example 5, and FIG. 7B is FIG. 7A.
FIG. In the figure, 15 is an LCD, 16 is a bending slit, and the other parts having the same functions as in FIGS. 1 (a), 1 (b) and 2 are given the same reference numerals.
It can be created by forming the punching die of the bending slit portion 16 into a slit having a curved shape, an uneven shape, or a smooth curved shape.

As described above, in Example 4, the base material of the lead portion is made convex and the base material portion between the leads is made concave in the lead exposure type bending slit portion of the foldable film carrier. The length of the border side becomes long.
For example, when the lead width is a mm and the length of the uneven portion is b mm as in the present invention, it becomes (a + 2b) mm, which is 2
It becomes a border side that is bmm long. Further, when bending, conventionally, stress was concentrated on the boundary portion between the base material slit and the lead lined up in a straight line, but according to the present invention, stress is dispersed at the lead boundary portion and the base material recessed portion, so stress resistance is improves.

Further, the fifth embodiment is a lead slit type bending slit portion 1 of a bendable film carrier.
6, the lead portion and the inter-lead base material boundary are formed in a semicircular shape, the lead portion base material has a convex shape, and the lead base material portion has a concave shape, and the curved and smooth slit is formed. The length of the boundary side can be lengthened and the strength can be increased by setting. For example, if the lead width is amm,
As in the present invention, assuming that the slit has a shape in which semicircles having a diameter a are alternately repeated, the length of the boundary side between the lead and the base material slit is (π / 2) a≈1.57 amm. That is, the boundary side length is about 1.6 times. Further, when bending, conventionally, stress was concentrated on the boundary portion between the base material slit and the lead arranged in a straight line, but according to the present invention, the stress is dispersed at the lead boundary portion and the base material concave portion. Further, the stress resistance is further improved because the slit edge has a smooth curved shape.

8, FIG. 9 (a), (b) and FIG.
8A and 8B are configuration diagrams for explaining still another embodiment (embodiments 6 and 7) of the semiconductor device according to the present invention, and FIG. 8 is a diagram in which the TCP of the embodiments 6 and 7 is connected to an LCD. FIG. 9A is a plan view of the TCP of Example 6, FIG. 9B is a partially enlarged view of FIG. 9A, and FIG.
10A is a plan view of the TCP of Example 7, and FIG. 10B is a partially enlarged view of FIG. 10A. In the figure, 17 is a polyimide resin, and in addition, FIG. 5, FIG. 6 (a), (b), FIG.
Portions having the same functions as those in (a) and (b) are designated by the same reference numerals.

A polyimide resin 17 is applied to the bent portion 16 to improve reliability during bending.
This polyimide resin coat is created by applying a solder resist for protecting the Cu foil pattern to the slit portion in the solder resist process in FIG.
The slits in this case can also be formed by forming the punching die into curved, concave-convex or smooth curved slits, as described above.

As described above, in the sixth embodiment, the stress resistance is improved by providing the lead of the film carrier capable of bending the slit of the fourth embodiment in the slit portion of the one covered with the polyimide resin (flex type). . Further, in the seventh embodiment, the stress resistance is improved by providing the lead of the film carrier capable of bending the slit of the fifth embodiment in the slit portion of the one covered with the polyimide resin (flex type).

11, FIG. 12 (a), (b) and FIG.
11A and 11B are configuration diagrams for explaining still another embodiment (embodiments 8 and 9) of the semiconductor device according to the present invention, and FIG. 11 shows the ILB portion of the TCP of claims 8 and 9. Sectional view, Figure 1
2 (a) is a plan view of the TCP of claim 8, FIG. 12 (b) is a partially enlarged view of FIG. 12 (a), FIG. 13 (a) is a plan view of the TCP of claim 9, and FIG. 13 (b). FIG. 14 is a partially enlarged view of FIG. In the figure, 18 is an inner lead, and others,
1 (a), 1 (b), and parts having the same functions as those in FIG. 2 are designated by the same reference numerals.

It can be prepared by forming the die for the device hole for ILBing the LSI 5 into a slit having a curved shape, an uneven shape, or a smooth curved shape. For the device hole, the LSI 5 is located in the hole, but normally LS
Since there are electrodes on the four sides of I5, the inner leads 18 are present on the four sides unlike the above-mentioned slit. That is,
In Examples 1 to 7, the slit shape on the lead boundary portion on the two sides was targeted, but the mold shape on all four sides is a curved shape, a concave-convex shape, or a smooth curved shape slit, so that it can be used from any direction. It is possible to improve the stress resistance of the lead boundary against the above stress.

As described above, in Example 8, in the slit of the ILB portion of the film carrier, the lead portion base material has a convex shape and the inter-lead base material has a concave shape so that the boundary side between the lead and the base material is long. Become. For example, when the lead width is a mm, the length of the boundary side between the lead and the base material is a mm in the case of the conventional slit shape, but when the length of the uneven portion is b mm as in the present invention ( a + 2b) mm, which is a boundary side that is 2bmm longer. Further, when external stress (bending, twisting, shearing, pulling, etc.) is applied to the LSI after ILB, stress is conventionally concentrated at the boundary between the base material slit and the lead arranged in a straight line, but according to the present invention, Since the stress is dispersed in the lead boundary portion and the base material recessed portion between the leads, the stress resistance is improved.

In Example 9, the film carrier I
In the slit of the LB portion, the base material of the lead portion is formed in a semicircular shape at the boundary for each lead of the plurality of leads, the lead portion base material has a convex shape, and the inter-lead base material has a concave shape. , The border between the lead and the base material becomes longer. For example, when the lead width is amm, the length of the boundary side between the lead and the base material is amm in the case of the conventional slit shape, but as in the present invention, the shape of a semicircle with a diameter of amm is repeated. If it is a slit, the length of the boundary side is (π / 2) a≈1.
The width is 57 amm, which is about 1.6 times the boundary side length. Also,
When the LSI is subjected to an external stress after being subjected to an ILB, the stress is conventionally concentrated at the boundary between the base material slit and the lead boundary, but in the present invention, the stress is dispersed at the lead boundary portion and the base material concave portion. . In addition, the slit edge also has a smooth curved shape,
Stress resistance is improved.

[0044]

As is apparent from the above description, the present invention has the following effects. (1) Effect corresponding to claim 1: By changing the shape of the slit of the OLB portion from the conventional square shape to the uneven shape or the curved shape, the breaking strength at the boundary between the lead and the slit becomes strong. That is, the durability of the TCP alone and the stress resistance after soldering are improved. (2) Effect corresponding to claim 2: By forming the concave and convex slits for each lead, the breaking strength at the boundary between the lead and the slit becomes strong. That is, TCP alone, TC after soldering
P durability is improved. (3) Effect corresponding to claim 3: By making each lead a semicircular slit, the breaking strength at the boundary between the lead and the slit becomes strong. That is, TCP alone, T after soldering
CP durability is improved. (4) Effects corresponding to claims 4 to 6: In the lead exposure type bending slit portion of the foldable film carrier, the base material of the lead portion has a convex shape, and the base material portion between the leads has a concave shape, In addition, the lead portion and the base material boundary between the leads are formed in a semicircular shape, the base material of the lead portion is formed in a convex shape, and the base material portion between the leads is formed in a concave shape. Since it is provided in the slit portion of what is covered with the polyimide resin, TCP bending durability is improved. (5) Effects corresponding to claims 7 and 8: In the slit of the ILB portion of the film carrier, the base material of the lead portion is convex and the base material portion between the leads is concave for each lead. By forming the boundary of the base material in a semi-circular shape and forming a curved and smooth slit, the stress resistance strength after TCP and ILB is improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram for explaining an embodiment of a semiconductor device according to the present invention.

FIG. 2 is a cross-sectional view in which the TCP according to the present invention is soldered to a substrate.

FIG. 3 is a configuration diagram for explaining another embodiment of the semiconductor device according to the present invention.

FIG. 4 is a configuration diagram for explaining still another embodiment of the semiconductor device according to the present invention.

FIG. 5 is a cross-sectional view showing a state in which a TCP according to the present invention is connected to an LCD and is bent.

FIG. 6 is a configuration diagram for explaining yet another embodiment of the semiconductor device according to the present invention.

FIG. 7 is a configuration diagram for explaining yet another embodiment of the semiconductor device according to the present invention.

FIG. 8 is a cross-sectional view showing a state in which a TCP according to the present invention is connected to an LCD and is bent.

FIG. 9 is a configuration diagram for explaining yet another embodiment of the semiconductor device according to the present invention.

FIG. 10 is a configuration diagram for explaining yet another embodiment of the semiconductor device according to the present invention.

FIG. 11 is a sectional view of an ILB portion of TCP according to the present invention.

FIG. 12 is a configuration diagram for explaining yet another embodiment of the semiconductor device according to the present invention.

FIG. 13 is a configuration diagram for explaining yet another embodiment of the semiconductor device according to the present invention.

FIG. 14 is a flowchart showing manufacturing steps of the film carrier tape according to the present invention.

FIG. 15 is a cross-sectional view of the film carrier during each manufacturing process according to the present invention.

FIG. 16 is a cross-sectional view in which a conventional TCP is soldered and connected to a substrate.

FIG. 17 is a configuration diagram of a conventional TCP.

FIG. 18 is a cross-sectional view showing a state in which a conventional TCP is connected to an LCD and bent.

FIG. 19 is a configuration diagram of a conventional TCP.

FIG. 20 is a configuration diagram of a conventional TCP.

FIG. 21 is a sectional view of an ILB portion of a conventional TCP.

FIG. 22 is a configuration diagram of a conventional TCP.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Polyimide base material, 2 ... Substrate, 3 ... Substrate Cu foil pattern, 4 ... Device hole, 5 ... LSI chip, 6 ... Sealing resin, 7 ... OLB bonding tool, 8 ... OLB slit, 9 ... Cu foil pattern 10 ... Solder, 11 ... Cover film, 12 ... Adhesive agent, 13 ... Resist, 14 ... Backing resin, 15 ... LCD, 16 ... Bending slit part, 17 ... Polyimide resin, 18 ... Inner lead.

Claims (8)

[Claims] 1. A semiconductor device for soldering a tape carrier package and a substrate, comprising a film carrier in which a lead portion for outer lead bonding of the film carrier has a slit shape in a curved shape or an uneven shape. . 2. A semiconductor device for soldering a tape carrier package and a substrate, wherein the base material of the slit-shaped lead portion of the lead portion for outer lead bonding of the film carrier is convex, and the base material portion between the leads is A semiconductor device having a concave film carrier. 3. A semiconductor device for soldering a tape carrier package and a substrate, wherein each boundary is formed in a semi-circular shape, the base material of the lead portion is convex, and the base material portion between the leads is concave. And a semiconductor device having a film carrier having a curved and smooth slit. 4. A semiconductor device for soldering a tape carrier package and a substrate, wherein the base material of the lead portion is formed in a convex shape in the lead exposure type bending slit portion of the foldable film carrier, and the base material between the leads is formed. A semiconductor device having a film carrier having a concave portion. 5. A semiconductor device for soldering a tape carrier package and a substrate, wherein the lead and the base material boundary between the leads are formed in a semicircular shape in a lead exposure type bending slit portion of a foldable film carrier. The semiconductor device is characterized in that the base material of the lead portion has a convex shape, the base material portion between the leads has a concave shape, and the film carrier has a curved and smooth slit. 6. The semiconductor device according to claim 4, wherein the lead of the film carrier capable of bending the slit is provided in the slit of the one covered with a resin such as polyimide. 7. In a semiconductor device for soldering a tape carrier package and a substrate, the base material of the lead portion is convex and the base material portion between the leads is concave at the slit of the inner lead bonding of the film carrier. Semiconductor device having the film carrier described above. 8. In a semiconductor device for soldering a tape carrier package and a substrate, the base material of the lead portion has a convex shape and the base material portion between the leads has a concave shape in the slit of the inner lead bonding of the film carrier. And
A semiconductor device having a film carrier in which a boundary of a base material is formed in a semicircular shape, and has a curved and smooth slit.