JPH08139012A - Manufacture of circuit, and aligner - Google Patents

Manufacture of circuit, and aligner

Info

Publication number
JPH08139012A
JPH08139012A JP7104823A JP10482395A JPH08139012A JP H08139012 A JPH08139012 A JP H08139012A JP 7104823 A JP7104823 A JP 7104823A JP 10482395 A JP10482395 A JP 10482395A JP H08139012 A JPH08139012 A JP H08139012A
Authority
JP
Japan
Prior art keywords
image
image forming
optical system
meniscus
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7104823A
Other languages
Japanese (ja)
Other versions
JP2565149B2 (en
Inventor
Takamasa Hirose
隆昌 広瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP7104823A priority Critical patent/JP2565149B2/en
Publication of JPH08139012A publication Critical patent/JPH08139012A/en
Application granted granted Critical
Publication of JP2565149B2 publication Critical patent/JP2565149B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Abstract

PURPOSE: To enable printing a fine circuit pattern, by reducing imaging magnification, correcting the coma generated at the time of reduction, forming a circuit pattern image on an intermediate image surface with an imaging optical system constituted of reflecting mirrors, and again forming the image on an object to be exposed. CONSTITUTION: A meniscus lens L11 is so arranged that only the luminous flux reflected by a concave mirror M13 transmits. Thereby off-axis aberration and coma which are mostly generated when a demagnification system is constituted are corrected. A second imaging system is so constituted that the luminous flux from an object point P2 passes two meniscus lenses L21 , L22 , a concave mirror M21 , and two meniscus-shaped lens L22 ', L21 ', and then forms an image at a second image point P2 '. Thereby the residual aberration and the chromatic aberration in the first imagery system can be excellently corrected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、IC、LSI等の回路
の製造方法、及びIC、LSI等の回路を製造する際に
用いる露光装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a circuit such as IC and LSI, and an exposure apparatus used when manufacturing a circuit such as IC and LSI.

【0002】[0002]

【従来の技術】従来より投影露光装置を用い、IC、L
SI等の集積回路のパターンをシリコンウエハーに焼付
ける為の反射型の軸外結像光学系が、例えば特開昭48-1
2039号公報「単位倍率の反射光学系」、特開昭52- 5544
号公報「反射光学系」、特開昭53- 100230号公報「環帯
視野光学系」、特開昭58- 219517号公報「挟角オフアク
シス光学装置」等で提案されている。
2. Description of the Related Art Conventionally, IC, L
A reflective off-axis imaging optical system for printing a pattern of an integrated circuit such as SI on a silicon wafer is disclosed in, for example, JP-A-48-1.
2039, "Unit Magnification Reflective Optical System," JP-A-52-5544
It is proposed in JP-A No. 53-100230, "Ring-field optical system", and JP-A No. 58-219517, "Inclined-angle off-axis optical device".

【0003】特開昭48-12039号公報や特開昭52- 5544号
公報では、凹面鏡と凸面鏡の2枚の反射鏡を曲率中心が
同心若しくは非同心となるようにし、かつ全系の結像倍
率が等倍になるようにして結像光学系を構成している。
In Japanese Patent Laid-Open No. 48-12039 and Japanese Patent Laid-Open No. 52-5544, two reflecting mirrors, a concave mirror and a convex mirror, are arranged so that their centers of curvature are concentric or non-concentric, and the entire system is imaged. The image forming optical system is configured so that the magnification is the same.

【0004】特開昭53- 100230号公報では凹面鏡と凸面
鏡の他に負の屈折力のメニスカス形状のレンズを用い光
学性能の向上を図っている。又特開昭58- 219517号公報
では反射系と屈折系を組み合わせて光学性能の向上を図
った結像倍率が等倍の反射屈折光学系を提案している。
In Japanese Patent Laid-Open No. 53-100230, in addition to a concave mirror and a convex mirror, a meniscus lens having a negative refractive power is used to improve optical performance. Further, Japanese Patent Application Laid-Open No. 58-219517 proposes a catadioptric optical system having a uniform imaging magnification with improved optical performance by combining a reflecting system and a refracting system.

【0005】この種の結像倍率が等倍の反射鏡より成る
結像光学系は、色収差や非対称性収差であるコマ収差や
歪曲収差が殆ど生じない構成となっている点で、回路パ
ターンの焼付け用の結像光学系として優れているが、結
像倍率が等倍である為、より微細な回路パターンを焼付
けるのは困難である。
An image-forming optical system of this kind, which is composed of a reflecting mirror having an image-magnification magnification of 1 ×, has a circuit pattern in that coma and distortion, which are chromatic aberrations and asymmetrical aberrations, hardly occur. Although it is excellent as an image forming optical system for printing, it is difficult to print a finer circuit pattern because the image forming magnification is equal.

【0006】[0006]

【発明が解決しようとする課題】本発明の目的は、より
微細な回路パターンの焼付けが可能な、反射鏡より成る
結像光学系を用いた、回路の製造方法及び露光装置を提
供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a circuit and an exposure apparatus using an imaging optical system composed of a reflecting mirror, which enables printing of a finer circuit pattern. is there.

【0007】[0007]

【課題を解決するための手段】本発明の回路の製造方法
は、反射鏡より成る結像光学系により回路パターンを被
露光体上に結像せしめる工程を含む回路の製造方法にお
いて、前記反射鏡より成る結像光学系の結像倍率を縮小
にし、結像倍率を縮小にした際に生じるコマ収差を補正
し、前記反射鏡より成る結像光学系により、前記回路パ
ターンの像を中間像面に形成した後で前記被露光体上に
再結像することを特徴としている。
A method of manufacturing a circuit according to the present invention is a method of manufacturing a circuit, which includes a step of forming an image of a circuit pattern on an object to be exposed by an image forming optical system including a reflecting mirror. The imaging optical system is made to have a reduced imaging magnification, and the coma aberration generated when the imaging magnification is reduced is corrected. It is characterized in that it is re-imaged on the object to be exposed after the formation.

【0008】本発明の露光装置は、投影光学系によりマ
スクのパターンを被露光体上に投影する露光装置におい
て、前記投影光学系が縮小倍率を有し且つ反射鏡より成
る結像光学系と、前記反射鏡より成る結像光学系で生じ
るコマ収差を補正する補正手段とを備え、前記反射鏡よ
り成る結像光学系は、中間像面を有し、前記回路パター
ンの像を前記中間像面に形成した後で前記被露光体上に
再結像することを特徴としている。
The exposure apparatus of the present invention is an exposure apparatus for projecting a pattern of a mask onto an object to be exposed by a projection optical system, wherein the projection optical system has a reduction magnification and an imaging optical system composed of a reflecting mirror. And an image forming optical system including the reflecting mirror, the image forming optical system including the reflecting mirror having an intermediate image plane, and forming an image of the circuit pattern on the intermediate image plane. It is characterized in that it is re-imaged on the object to be exposed after the formation.

【0009】[0009]

【実施例】図1は本発明の反射鏡より成る結像光学系に
より回路パターンを被露光体上に結像せしめる工程の為
の露光装置の一実施例の光学系の概略図である。図2は
本発明の数値実施例の収差図である。収差図において
(A)はサジタル像面、(B)はメリディオナル像面で
ある。図1の反射屈折光学系は物体側より順に同一方向
に曲率中心を有し、かつ同一光軸上に位置するように凹
面鏡M11、凸面鏡M12そして凹面鏡M13の3つの反射鏡
とメニスカス形状のレンズL11で第1結像系を構成し、
2つのメニスカス形状のレンズL21,L22、凹面鏡M21
そして2つのメニスカス形状のレンズL22′,L21′で
第2結像系を構成している。
1 is a schematic view of an optical system of an embodiment of an exposure apparatus for the step of forming an image of a circuit pattern on an object to be exposed by an image forming optical system comprising a reflecting mirror of the present invention. FIG. 2 is an aberration diagram of a numerical example of the present invention. In the aberration diagrams, (A) is a sagittal image plane, and (B) is a meridional image plane. The catadioptric optical system of FIG. 1 has a meniscus shape and three reflecting mirrors, a concave mirror M 11 , a convex mirror M 12, and a concave mirror M 13 , which have a center of curvature in the same direction in order from the object side and are located on the same optical axis. The first image forming system is configured by the lens L 11 of
Two meniscus lenses L 21 , L 22 , a concave mirror M 21
The two meniscus lenses L 22 ′ and L 21 ′ form a second image forming system.

【0010】そして、図中、光軸上方の所定領域内の軸
外物点Pからの光束を反射鏡M11,M12,M13の順で反
射させ、レンズL11を経た後、第1像点P1 ′に結像さ
せている。又第1像点P1 ′は第2結像系の物点P2
なり、物点P2 からの光束が2つのレンズL21,L22
凹面鏡M21そして2つのレンズL22′,L21′を経て第
2像点P2 ′に結像するように構成している。
Then, in the figure, a light beam from an off-axis object point P in a predetermined region above the optical axis is reflected in the order of reflecting mirrors M 11 , M 12 , and M 13 , passes through a lens L 11, and then the first An image is formed at the image point P 1 ′. The first image point P 1 'is object point P 2 next to the second imaging system, the light beam from the object point P 2 2 two lenses L 21, L 22,
An image is formed on the second image point P 2 ′ via the concave mirror M 21 and the two lenses L 22 ′ and L 21 ′.

【0011】本実施例では第1結像系を物点P1 からの
光束が凹面鏡M11、凸面鏡M12そして凹面鏡M13の、所
謂正、負、正の屈折力の3つの反射鏡とメニスカス形状
のレンズL11を通過した後に第1像点P1 ′に結像する
ように構成し、各反射鏡より発生する収差をバランス良
く補正している。
In this embodiment, the first imaging system uses a concave mirror M 11 , a convex mirror M 12, and a concave mirror M 13 for reflecting a light beam from the object point P 1 , three reflecting mirrors having so-called positive, negative, and positive refractive powers and a meniscus. The image is formed on the first image point P 1 ′ after passing through the shaped lens L 11, and aberrations generated by the respective reflecting mirrors are corrected in a well-balanced manner.

【0012】特にメニスカス形状のレンズL11を凹面鏡
13で反射した光束のみが透過するように配置すること
により、縮小系を構成する場合に多く発生する軸外収差
とコマ収差(非対称性収差)を良好に補正している。
In particular, by disposing the meniscus lens L 11 so that only the light beam reflected by the concave mirror M 13 is transmitted, off-axis aberrations and coma aberrations (asymmetrical aberrations) that often occur when a reduction system is constructed. Is corrected well.

【0013】又レンズL11で第2結像系に配置した屈折
系より生じる色収差を互いに打消し、第2結像系の収差
補正を容易にしている。
The lens L 11 cancels chromatic aberrations caused by the refracting system arranged in the second image forming system, thereby facilitating the aberration correction of the second image forming system.

【0014】第2結像系を物点P2 からの光束がまず2
つのメニスカス形状のレンズL21,L22を通過し、凹面
鏡M21そして2つのメニスカス形状のレンズL22′,L
21′を通過した後、第2像点P2 ′に結像するよう構成
し、第1結像系での残存収差の補正及び色収差の補正を
良好に行っている。
First, the light flux from the object point P 2 passes through the second imaging system to be 2
It passes through two meniscus-shaped lenses L 21 and L 22 , a concave mirror M 21 and two meniscus-shaped lenses L 22 ′ and L 22 .
After passing through 21 ′, the image is formed at the second image point P 2 ′, and the residual aberration and the chromatic aberration in the first image forming system are well corrected.

【0015】特に各々のレンズの硝材を短波長(波長2
30〜400nm)側の透過率が良い石英ガラスのみで
構成したにもかかわらず、前述の如くレンズ形状を特定
することにより、後述する収差図に示す如く良好なる色
収差の補正を達成している。特に物点P2 からの光束を
2つのレンズL21,L22そして同じく2つのレンズ
22′,L21′を介することにより口径比の拡大を図り
つつ全体的にコマ収差や軸外ハロー等の収差の発生量を
少なくすると共に第1結像系のレンズL11と共に色収差
の補正を良好に行っている。そして反射系を採用したに
もかかわらず、光束のケラレを極力少なくしている。
In particular, the glass material of each lens has a short wavelength (wavelength 2
(30 to 400 nm) side, although it is composed only of quartz glass having good transmittance, by specifying the lens shape as described above, good chromatic aberration correction is achieved as shown in the aberration charts described later. In particular, the light flux from the object point P 2 is passed through the two lenses L 21 and L 22 and also the two lenses L 22 ′ and L 21 ′ so that the aperture ratio is increased and the coma aberration, the off-axis halo, etc. are overall. In addition to reducing the amount of aberration, the chromatic aberration is corrected well together with the lens L 11 of the first imaging system. And even though the reflection system is adopted, the vignetting of the light flux is minimized.

【0016】本実施例では第1結像系の結像倍率を0.
11倍、第2結像系の結像倍率を2.26倍とし、全体
として0.25倍の縮小系の反射屈折光学系を構成して
いる。
In this embodiment, the image forming magnification of the first image forming system is set to 0.
11 times, the imaging magnification of the second imaging system is 2.26 times, and constitutes a 0.25 times reduction catadioptric optical system as a whole.

【0017】このように一方の結像系を拡大系、他方の
結像系を縮小系とし、全体的に縮小系となるように構成
することにより、各々の結像系で発生する軸外球面収
差、コマ収差、歪曲収差等の諸収差の補正を良好に行い
簡易な構成にもかかわらず大口径比の反射屈折光学系を
容易に達成している。
As described above, by constructing one of the image forming systems as the magnifying system and the other image forming system as the reducing system so that the entire system becomes the reducing system, the off-axis spherical surface generated in each of the image forming systems is formed. Various aberrations such as aberration, coma, and distortion are favorably corrected, and a catadioptric optical system having a large aperture ratio is easily achieved despite a simple configuration.

【0018】尚、本実施例において軸外球面収差、コマ
収差そして色収差の補正を更に良好に行いより高解像力
の縮小系を達成するにはレンズL11を凹面鏡M13側に凹
面を向けたメニスカス形状のレンズで又レンズL21,L
22,L21′,L22′をいずれも凹面鏡M21側に凸面を向
けたメニスカス形状のレンズで構成するのが好ましい。
又レンズL11とレンズL21、レンズL21′を正の屈折
力、レンズL22、レンズL22′を負の屈折力のレンズで
構成するのが良好なる収差補正を達成するのに好まし
い。
Incidentally, in this embodiment, in order to further favorably correct off-axis spherical aberration, coma aberration and chromatic aberration and achieve a reduction system with higher resolution, the lens L 11 is a meniscus whose concave surface faces the concave mirror M 13 side. Shaped lens again lens L 21 , L
It is preferable that each of 22 , L 21 ′ and L 22 ′ is formed of a meniscus lens having a convex surface facing the concave mirror M 21 side.
Further, it is preferable that the lens L 11 and the lens L 21 and the lens L 21 ′ are constituted by lenses having a positive refractive power, and the lens L 22 and the lens L 22 ′ are constituted by lenses having a negative refractive power, in order to achieve good aberration correction.

【0019】本実施例ではレンズL21とレンズL21′を
同一のレンズで、又レンズL22とレンズL22′を同一の
レンズで各々構成した場合を示したが、各レンズを別々
のレンズで構成しても良く、これによれば自由度が増
し、より良好に収差補正を達成することができる。又レ
ンズL11を2枚以上のメニスカス形状のレンズで構成し
ても本発明の目的を達成することができる。
In this embodiment, the lens L 21 and the lens L 21 ′ are the same lens, and the lens L 22 and the lens L 22 ′ are the same lens. However, each lens is a separate lens. In this case, the degree of freedom is increased, and aberration correction can be achieved better. Further, the object of the present invention can be achieved even if the lens L 11 is composed of two or more meniscus lenses.

【0020】又本実施例においては物点P1 からの主光
線が凸面鏡M12と凹面鏡M13との間及び凹面鏡M21とレ
ンズL22′との間で各々光軸と交わるように構成し、光
学系全体を小型にし、しかも光束のケラレを少なくしつ
つ高性能な反射屈折光学系を達成している。
In this embodiment, the chief ray from the object point P 1 intersects the optical axis between the convex mirror M 12 and the concave mirror M 13 and between the concave mirror M 21 and the lens L 22 ′. , The entire optical system is made compact, and the high-performance catadioptric optical system is achieved while reducing the vignetting of the light flux.

【0021】本実施例では後述するように各レンズを同
一の硝材より構成した場合を示したが、短波長側での透
過率の良いCaF2 等を用いても良い。
In this embodiment, each lens is made of the same glass material as described later, but CaF 2 or the like, which has good transmittance on the short wavelength side, may be used.

【0022】次に第1図に示す実施例の数値実施例を示
す。Riは物点P1 から光の進行順に数えて第i番目の
反射鏡及びレンズ面の曲率半径、Diは物点P1 からの
光の進行順に数えて第i番目と第i+1番目のレンズ厚
及び空気間隔、SiO2 は石英ガラスである。空気間隔
及び屈折率は光の進行方向左方から右方に測ったときを
正、その逆を負として示している。
Next, numerical examples of the embodiment shown in FIG. 1 will be shown. Ri represents a radius of curvature of the i-th reflector and lens surface counted in order of progress of the light from the object point P 1, Di is the i-th and the (i + 1) th lens thickness counting the order of progress of the light from the object point P 1 And air space, SiO 2 is quartz glass. The air gap and the refractive index are shown as positive when measured from the left to the right in the light traveling direction and as negative when measured in the opposite direction.

【0023】 NA = 0.25 ,スリット幅 1.5mm ,倍率 1/4[0023] NA = 0.25, slit width 1.5mm, magnification 1/4

【0024】[0024]

【表1】 [Table 1]

【0025】[0025]

【発明の効果】本発明によれば、回路パターン等のパタ
ーンを反射鏡より成る結像光学系で縮小結像でき、しか
も当該結像光学系で生じるコマ収差を補正して鮮明な像
を生成するので、より微細なパターンを被露光体上に正
確に焼付けることが可能になり、よって、高い集積度を
持つIC,LSI等の供給にも役立つ。
According to the present invention, a pattern such as a circuit pattern can be formed into a reduced image by an image forming optical system including a reflecting mirror, and a coma aberration generated in the image forming optical system can be corrected to form a clear image. Therefore, it becomes possible to accurately print a finer pattern on the object to be exposed, which is also useful for supplying ICs, LSIs and the like having a high degree of integration.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の数値実施例の光学断面図FIG. 1 is an optical sectional view of a numerical example of the present invention.

【図2】 本発明の数値実施例の収差図FIG. 2 is an aberration diagram of numerical examples of the present invention.

【符号の説明】[Explanation of symbols]

0 物高 P1 第1物点 P2 第2物点 P1 ′ 第1像点 P2 ′ 第2像点 L11, L21,L22, L21′, L22′ 補正手段Y 0 Object height P 1 First object point P 2 Second object point P 1 ′ First image point P 2 ′ Second image point L 11 , L 21 , L 22 , L 21 ′, L 22 ′ Correcting means

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 反射鏡より成る結像光学系により回路パ
ターンを被露光体上に結像せしめる工程を含む回路の製
造方法において、前記反射鏡より成る結像光学系の結像
倍率を縮小にし、結像倍率を縮小にした際に生じるコマ
収差を補正し、前記反射鏡より成る結像光学系により、
前記回路パターンの像を中間像面に形成した後で前記被
露光体上に再結像することを特徴とする回路の製造方
法。
1. A method of manufacturing a circuit including a step of forming an image of a circuit pattern on an object to be exposed by an image forming optical system including a reflecting mirror, wherein an image forming magnification of the image forming optical system including the reflecting mirror is reduced. By correcting the coma aberration that occurs when the image forming magnification is reduced, and by the image forming optical system including the reflecting mirror,
A method of manufacturing a circuit, comprising forming an image of the circuit pattern on an intermediate image plane and then re-imaging the image on the exposed body.
【請求項2】 投影光学系によりマスクのパターンを被
露光体上に投影する露光装置において、前記投影光学系
が縮小倍率を有し且つ反射鏡より成る結像光学系と、前
記反射鏡より成る結像光学系で生じるコマ収差を補正す
る補正手段とを備え、前記反射鏡より成る結像光学系
は、中間像面を有し、前記回路パターンの像を前記中間
像面に形成した後で前記被露光体上に再結像することを
特徴とする露光装置。
2. An exposure apparatus for projecting a mask pattern onto an object to be exposed by a projection optical system, wherein the projection optical system has a reduction magnification and is composed of a reflecting mirror, and the reflecting mirror. And an image forming optical system including the reflecting mirror, the image forming optical system having an intermediate image plane, and forming an image of the circuit pattern on the intermediate image plane. An exposure apparatus which re-images on the object to be exposed.
【請求項3】 前記補正手段が屈折光学系を含むことを
特徴とする請求項2記載の露光装置。
3. The exposure apparatus according to claim 2, wherein the correction means includes a refracting optical system.
【請求項4】 前記反射鏡より成る結像光学系が第1,
第2の2つの結像系を順に配置して成り、前記第1結像
系により形成した物体の像を前記第2結像系により再結
像するよう前記第1,第2結像系が構成されていること
を特徴とする請求項2記載の露光装置。
4. An image forming optical system comprising the reflecting mirror is
A second two image forming systems are arranged in order, and the first and second image forming systems are arranged so that the image of the object formed by the first image forming system is re-imaged by the second image forming system. The exposure apparatus according to claim 2, wherein the exposure apparatus is configured.
【請求項5】 前記物体側から光の進行順に、前記第1
結像系が凹面鏡M11、凸面鏡M12、凹面鏡M13を有し、
前記第2結像系が凹面鏡M21を有することを特徴とする
請求項4記載の露光装置。
5. The first light source is arranged in the order of traveling from the object side.
The imaging system has a concave mirror M 11 , a convex mirror M 12 , and a concave mirror M 13 ,
The exposure apparatus according to claim 4, wherein the second imaging system has a concave mirror M 21 .
【請求項6】 前記物体側から光の進行順に、前記補正
手段が、メニスカス形状のレンズL11、メニスカス形状
の2つのレンズL21,L22、メニスカス形状の2つのレ
ンズL22′,L21′を有することを特徴とする請求項5
記載の露光装置。
6. The correction means includes a meniscus-shaped lens L 11 , two meniscus-shaped lenses L 21 , L 22 , and two meniscus-shaped lenses L 22 ′, L 21 in the order in which light travels from the object side. ???
The exposure apparatus described.
JP7104823A 1995-04-05 1995-04-05 Circuit manufacturing method and exposure apparatus Expired - Lifetime JP2565149B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7104823A JP2565149B2 (en) 1995-04-05 1995-04-05 Circuit manufacturing method and exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7104823A JP2565149B2 (en) 1995-04-05 1995-04-05 Circuit manufacturing method and exposure apparatus

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP59280573A Division JPS61156737A (en) 1984-12-27 1984-12-27 Catadioptric system

Publications (2)

Publication Number Publication Date
JPH08139012A true JPH08139012A (en) 1996-05-31
JP2565149B2 JP2565149B2 (en) 1996-12-18

Family

ID=14391126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7104823A Expired - Lifetime JP2565149B2 (en) 1995-04-05 1995-04-05 Circuit manufacturing method and exposure apparatus

Country Status (1)

Country Link
JP (1) JP2565149B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674959B1 (en) * 2005-02-23 2007-01-26 삼성전자주식회사 Off-axis projection optics and extreme ultra violet lithography apparatus applying it

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520636A (en) * 1949-05-07 1950-08-29 Polaroid Corp Optical objective
JPS53100230A (en) * 1977-02-11 1978-09-01 Perkin Elmer Corp Ring zone fielddoffview optical system
JPS5517197A (en) * 1971-06-21 1980-02-06 Perkin Elmer Corp Optical system for transmitting image out of axis
JPS58500730A (en) * 1981-05-15 1983-05-06 ゼネラル シグナル コ−ポレ−シヨン Apparatus for projecting a series of images onto a die body of a semiconductor wafer
JPS5890610A (en) * 1981-11-24 1983-05-30 Matsushita Electric Ind Co Ltd Catadioptric optical system
JPS58219517A (en) * 1982-06-01 1983-12-21 エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド Narrow angle off-axis optical device
JPS6129815A (en) * 1984-07-23 1986-02-10 Nippon Kogaku Kk <Nikon> Reflex reduction projecting optical system
JPS61156737A (en) * 1984-12-27 1986-07-16 Canon Inc Catadioptric system
JPH0525170A (en) * 1991-07-18 1993-02-02 Sapporo Breweries Ltd Pyridone derivative, its production and antiulcerous agent containing the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520636A (en) * 1949-05-07 1950-08-29 Polaroid Corp Optical objective
JPS5517197A (en) * 1971-06-21 1980-02-06 Perkin Elmer Corp Optical system for transmitting image out of axis
JPS53100230A (en) * 1977-02-11 1978-09-01 Perkin Elmer Corp Ring zone fielddoffview optical system
JPS58500730A (en) * 1981-05-15 1983-05-06 ゼネラル シグナル コ−ポレ−シヨン Apparatus for projecting a series of images onto a die body of a semiconductor wafer
JPS5890610A (en) * 1981-11-24 1983-05-30 Matsushita Electric Ind Co Ltd Catadioptric optical system
JPS58219517A (en) * 1982-06-01 1983-12-21 エスヴィージー・リトグラフィー・システムズ・インコーポレイテッド Narrow angle off-axis optical device
JPS6129815A (en) * 1984-07-23 1986-02-10 Nippon Kogaku Kk <Nikon> Reflex reduction projecting optical system
JPS61156737A (en) * 1984-12-27 1986-07-16 Canon Inc Catadioptric system
JPH0525170A (en) * 1991-07-18 1993-02-02 Sapporo Breweries Ltd Pyridone derivative, its production and antiulcerous agent containing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674959B1 (en) * 2005-02-23 2007-01-26 삼성전자주식회사 Off-axis projection optics and extreme ultra violet lithography apparatus applying it

Also Published As

Publication number Publication date
JP2565149B2 (en) 1996-12-18

Similar Documents

Publication Publication Date Title
JPH0525170B2 (en)
USRE38421E1 (en) Exposure apparatus having catadioptric projection optical system
JP4717974B2 (en) Catadioptric optical system and projection exposure apparatus provided with the optical system
JP4245286B2 (en) Catadioptric optical system and exposure apparatus provided with the optical system
US7190530B2 (en) Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6879383B2 (en) Large-field unit-magnification projection system
KR20000011933A (en) Catadioptric optical system and exposure apparatus having the same
JPH08334695A (en) Catadioptric system
EP1094350A2 (en) Optical projection lens system
JP2001185480A (en) Optical projection system and projection exposure device equipped with the system
JP3925576B2 (en) Projection optical system, exposure apparatus including the optical system, and device manufacturing method using the apparatus
JPH07140385A (en) Projection optical system and projection aligner
US6781766B2 (en) Projection optical system
JP4207478B2 (en) Optical integrator, illumination optical apparatus, exposure apparatus, and exposure method
JP2565149B2 (en) Circuit manufacturing method and exposure apparatus
JPH0525088B2 (en)
JPH1010429A (en) Double image-formation optical system
JPH1010430A (en) Double image-formation optical system
EP0527043B1 (en) Catadioptric reduction projection optical system
JPH0695495B2 (en) Circuit manufacturing method and exposure apparatus using the same
JP2869849B2 (en) Integrated circuit manufacturing method
JP4328940B2 (en) Projection optical system, exposure apparatus, and exposure method
JPH0774090A (en) Manufacture of circuit and aligner
JP2565149C (en)
JP4375826B2 (en) Straight cylindrical catadioptric optical system, scanning exposure apparatus, and scanning exposure method

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term