JPH0774090A - Manufacture of circuit and aligner - Google Patents
Manufacture of circuit and alignerInfo
- Publication number
- JPH0774090A JPH0774090A JP7000794A JP7000794A JPH0774090A JP H0774090 A JPH0774090 A JP H0774090A JP 7000794 A JP7000794 A JP 7000794A JP 7000794 A JP7000794 A JP 7000794A JP H0774090 A JPH0774090 A JP H0774090A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- lens
- aberration
- concave mirror
- image formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Projection-Type Copiers In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はIC,LSI等の回路の
製造方法及びIC,LSI等の回路を製造する際に用い
る露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a circuit such as IC and LSI and an exposure apparatus used when manufacturing a circuit such as IC and LSI.
【0002】[0002]
【従来の技術】IC,LSI等の回路を製造する際、露
光装置を用い、その縮小結像光学系によりマスクの回路
パターンをウエハー上に縮小して結像して転写する工程
がある。2. Description of the Related Art When manufacturing a circuit such as an IC or an LSI, there is a step of using an exposure apparatus to reduce a circuit pattern of a mask onto a wafer to form an image and transfer it.
【0003】[0003]
【発明が解決しようとする課題】この露光装置の解像力
を上げるには露光光の波長を短くすると良いが、波長を
短くすると、縮小結像光学系を構成する互いに異なる硝
材より成る各レンズの光吸収のため、縮小結像光学系の
光学特性(ピント位置、倍率)が大きく変化する。In order to increase the resolution of this exposure apparatus, the wavelength of the exposure light may be shortened. However, if the wavelength is shortened, the light of each lens made of different glass materials that constitutes the reduction imaging optical system will be used. Due to the absorption, the optical characteristics (focus position, magnification) of the reduction imaging optical system change greatly.
【0004】このような光吸収を避けるには縮小結像光
学系にレンズを用いなければ良いが、このような構成で
はコマ収差等の重要な収差を補正することができず、ウ
エハー上に鮮明な像を形成できない。In order to avoid such light absorption, it is not necessary to use a lens in the reduction image-forming optical system, but with such a configuration, important aberrations such as coma aberration cannot be corrected, and it becomes clear on the wafer. Cannot form a perfect image.
【0005】[0005]
【課題を解決するための手段】本発明の目的は、ウエハ
ー上に鮮明な像を形成することができる、回路の製造方
法と露光装置を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a circuit manufacturing method and an exposure apparatus capable of forming a clear image on a wafer.
【0006】本発明の回路の製造方法は、縮小結像光学
系により回路パターンを被露光体上に縮小して結像せし
める工程を含む回路の製造方法において、前記縮小結像
光学系の屈折光学部材を光透過率の良い単一の硝材によ
り構成し、前記屈折光学部材によりコマ収差を補正せし
めることを特徴としており、これにより縮小結像光学系
の光学特性の変化を小さくしつつ、鮮明な回路パターン
像を形成している。A method of manufacturing a circuit according to the present invention is a method of manufacturing a circuit, which includes a step of reducing and imaging a circuit pattern on an object to be exposed by a reduction imaging optical system. It is characterized in that the member is composed of a single glass material having a good light transmittance, and the refracting optical member corrects coma aberration. A circuit pattern image is formed.
【0007】本発明の露光装置は、縮小結像光学系によ
りマスクパターンを被露光体上に縮小して結像せしめる
露光装置において、前記結像光学系は光透過率の良い単
一の硝材により構成した屈折光学部材を備え、前記屈折
光学部材によりコマ収差を補正することを特徴としてお
り、これにより縮小結像光学系の光学特性の変化を小さ
くしつつ鮮明なマスクパターン像を形成している。The exposure apparatus of the present invention is an exposure apparatus for reducing and forming an image of a mask pattern on an object to be exposed by a reduction image forming optical system, wherein the image forming optical system is made of a single glass material having a high light transmittance. It is characterized in that it comprises a refracting optical member configured to correct coma aberration by the refracting optical member, thereby forming a clear mask pattern image while reducing a change in optical characteristics of the reduction imaging optical system. .
【0008】短波長域の露光光を用いる場合の硝材とし
ては、SiO2 ,CaF2 が好ましい。SiO 2 and CaF 2 are preferable as the glass material when the exposure light in the short wavelength region is used.
【0009】また縮小結像光学系の視野をスリット状に
制限して良像域を取り出して露光することにより、より
鮮明なマスクパターン像を形成することができる。A sharper mask pattern image can be formed by limiting the field of view of the reduction image-forming optical system to a slit shape and taking out a good image area for exposure.
【0010】[0010]
【実施例】第1図は本発明の縮小結像光学系により回路
パターンを被露光体上に結像せしめる工程の為の露光装
置の一実施例の光学系の概略図である。同図の縮小結像
光学系は物体側より順に同一方向に曲率中心を有し、か
つ同一光軸上に位置するように凹面鏡M11 、凸面鏡M
12そして凹面鏡M13の3つの反射鏡とメニスカス形状の
レンズL11で第1結像系を構成し、2つのメニスカス形
状のレンズL21 ,L22 、凹面鏡M21そして2つのメニ
スカス形状のレンズL22′,L21′で第2結像系を構成
している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of an optical system of an embodiment of an exposure apparatus for the step of forming an image of a circuit pattern on an object to be exposed by the reduction imaging optical system of the present invention. The reduction imaging optical system in the figure has a center of curvature in the same direction in order from the object side, and a concave mirror M 11 and a convex mirror M so that they are positioned on the same optical axis.
12 and the three reflecting mirrors of the concave mirror M 13 and the meniscus-shaped lens L 11 constitute a first imaging system, and two meniscus-shaped lenses L 21 and L 22 , a concave mirror M 21 and two meniscus-shaped lenses L 11. 22 ', L 21' constitutes a second imaging system in.
【0011】そして図中、光軸上方の所定領域内の軸外
物点、即ち後述する数値実施例で示す所定のスリット幅
を有する軸外物点P1 からの光束を反射鏡M11 ,
M12 ,M13の順で反射させ、レンズL11を経た後、第
1像点P1 ′に結像させている。又第1像点P1 ′は第
2結像系の物点P2となり、物点P2からの光束が2つの
レンズL21 ,L22 、凹面鏡M21そして2つのレンズL
22′,L21′を経て第2像点P2 ′に結像するように構
成している。In the figure, a light beam from an off-axis object point within a predetermined area above the optical axis, that is, an off-axis object point P 1 having a predetermined slit width shown in a numerical example described later, is reflected by a reflecting mirror M 11 ,
The light is reflected in the order of M 12 and M 13 , passed through the lens L 11, and then imaged at the first image point P 1 ′. The first image point P 1 'is object point P 2 next to the second imaging system, the object point P 2 light beams from the two lenses L 21, L 22, the concave mirror M 21 and the two lenses L
An image is formed on the second image point P 2 ′ via 22 ′ and L 21 ′.
【0012】本実施例では第1結像系を物点P1 からの
光束が凹面鏡M11 、凸面鏡M12そして凹面鏡M13の所
謂、正,負,正の屈折力の3つの反射鏡とメニスカス形
状のレンズL11を通過した後に第1像点P1 ′に結像す
るように構成し、各反射鏡より発生する収差をバランス
良く補正している。In the present embodiment, the first imaging system uses a concave mirror M 11 , a convex mirror M 12, and a concave mirror M 13 for reflecting the light flux from the object point P 1 , three reflecting mirrors having so-called positive, negative and positive refractive powers and a meniscus. The image is formed on the first image point P 1 ′ after passing through the shaped lens L 11, and aberrations generated by the respective reflecting mirrors are corrected in a well-balanced manner.
【0013】特にメニスカス形状のレンズL11を凹面鏡
M13で反射した光束のみが透過するように配置すること
により縮小系を構成する場合に多く発生する軸外収差と
コマ収差(非対称性収差)を良好に補正している。又レ
ンズL11で第2結像系に配置した屈折系より生じる色収
差を互いに打ち消し、第2結像系の収差補正を容易にし
ている。Particularly, the off-axis aberration and the coma aberration (asymmetrical aberration) which often occur when a reduction system is constructed by arranging the meniscus lens L 11 so that only the light flux reflected by the concave mirror M 13 is transmitted. Corrected well. The lens L 11 cancels out the chromatic aberration caused by the refraction system arranged in the second image forming system, thereby facilitating the aberration correction of the second image forming system.
【0014】第2結像系を物点P2 からの光束が、まず
2つのメニスカス形状のレンズL21,L22を通過し、凹
面鏡M21そして2つのメニスカス形状のレンズL22′,
L21′を通過した後、第2像点P2 ′に結像するよう構
成し、第1結像系での残存収差の補正、及び色収差の補
正を良好に行っている。A light beam from the object point P 2 passes through the second image forming system first through two meniscus-shaped lenses L 21 and L 22 , and then a concave mirror M 21 and two meniscus-shaped lenses L 22 ′,
After passing L 21 ′, the image is formed on the second image point P 2 ′, and the residual aberration and the chromatic aberration in the first image forming system are corrected well.
【0015】特に各々のレンズの硝材を短波長(波長2
30〜400nm)側の透過率が良い石英ガラスのみで
構成したにもかかわらず、前述の如くレンズ形状を特定
することにより後述する収差図に示す如く良好なる色収
差の補正を達成している。In particular, the glass material of each lens has a short wavelength (wavelength 2
Despite being composed only of quartz glass having a good transmittance on the (30 to 400 nm) side, by specifying the lens shape as described above, good chromatic aberration correction is achieved as shown in the aberration charts described later.
【0016】特に物点P2 からの光束を2つのレンズL
21 ,L22そして同じく2つのレンズL22′,L21′を
介することにより口径比の拡大を図りつつ、全体的にコ
マ収差や軸外ハロー等の収差の発生量を少なくすると共
に第1結像系のレンズL11と共に色収差の補正を良好に
行っている。そして反射系を採用したにもかかわらず、
光束のケラレを極力少なくしている。In particular, the light flux from the object point P 2 is passed through the two lenses L.
21 and L 22 and similarly two lenses L 22 ′ and L 21 ′ are used to increase the aperture ratio and reduce the amount of aberrations such as coma and off-axis halo as a whole. The chromatic aberration is satisfactorily corrected together with the image system lens L 11 . And despite using a reflective system,
Vignetting of the light flux is minimized.
【0017】本実施例では第1結像系の結像倍率を0.
11倍、第2結像系の結像倍率を2.26倍として全体
として0.25倍の縮小系の縮小結像光学系を構成して
いる。In this embodiment, the imaging magnification of the first imaging system is set to 0.
11 times, the imaging magnification of the second imaging system is 2.26 times, and the reduction imaging optical system of the reduction system of 0.25 times is configured as a whole.
【0018】このように一方の結像系を拡大系、他方の
結像系を縮小系とし、全体的に縮小系となるように構成
することにより、各々の結像系で発生する軸外球面収
差、コマ収差、歪曲収差等の諸収差の補正を良好に行
い、簡易な構成にもかかわらず、大口径比の縮小結像光
学系を容易に達成している。As described above, by constructing one of the image-forming systems as the magnifying system and the other image-forming system as the reducing system so that the entire system becomes the reducing system, the off-axis spherical surface generated in each of the image-forming systems is formed. Aberrations, coma, distortion, and other aberrations are well corrected, and a large-aperture-ratio reduction imaging optical system is easily achieved despite a simple configuration.
【0019】尚本実施例において軸外球面収差、コマ収
差そして色収差の補正を更に良好に行い、より高解像力
の縮小系を達成するにはレンズL11を凹面鏡M13側に凹
面を向けたメニスカス形状のレンズで、又レンズ
L21 ,L22 ,L21′,L22′をいずれも凹面鏡M21側
に凸面を向けたメニスカス形状のレンズで構成するのが
好ましい。Incidentally, in this embodiment, in order to satisfactorily correct the off-axis spherical aberration, the coma aberration and the chromatic aberration, and to achieve a reduction system of higher resolution, the lens L 11 is a meniscus whose concave surface faces the concave mirror M 13 side. It is preferable that each of the lenses L 21 , L 22 , L 21 ′ and L 22 ′ is a meniscus lens having a convex surface facing the concave mirror M 21 side.
【0020】又レンズL11とレンズL21 、レンズ
L21′を正の屈折力、レンズL22 、レンズL22′を負
の屈折力のレンズで構成するのが良好なる収差補正を達
成するのに好ましい。Further, it is possible to achieve good aberration correction by forming the lenses L 11 and L 21 , and the lens L 21 ′ with positive refractive power, and the lenses L 22 and L 22 ′ with negative refractive power. Is preferred.
【0021】本実施例ではレンズL21とレンズL21′を
同一のレンズで、又レンズL22とレンズL22′を同一の
レンズで各々構成した場合を示したが、各レンズを別々
のレンズで構成しても良く、これによれば自由度が増
し、より良好に収差補正を達成することができる。又レ
ンズL11を2枚以上のメニスカス形状のレンズで構成し
ても本発明の目的を達成することができる。In this embodiment, the lens L 21 and the lens L 21 ′ are the same lens, and the lens L 22 and the lens L 22 ′ are the same lens. However, each lens is a separate lens. In this case, the degree of freedom is increased, and aberration correction can be achieved better. Further, the object of the present invention can be achieved even if the lens L 11 is composed of two or more meniscus lenses.
【0022】又本実施例においては物点P1 からの主光
線が凸面鏡M12と凹面鏡M13との間及び凹面鏡M21とレ
ンズL22′との間で各々光軸と交わるように構成し、光
学系全体を小型にし、しかも光束のケラレを少なくしつ
つ高性能な縮小結像光学系を達成している。In this embodiment, the chief ray from the object point P 1 intersects with the optical axis between the convex mirror M 12 and the concave mirror M 13 and between the concave mirror M 21 and the lens L 22 ′. , The entire optical system is made compact, and a high-performance reduction imaging optical system is achieved while reducing the vignetting of the light flux.
【0023】本実施例では後述するように各レンズをS
iO2 より構成する場合を示すが、短波長側で透過率の
良いCaF2 等を用いても良い。In this embodiment, each lens is set to S as described later.
Although a case of using iO 2 is shown, CaF 2 or the like, which has a high transmittance on the short wavelength side, may be used.
【0024】次に第1図に示す実施例の数値実施例を示
す。Riは物点P1 から光の進行順に数えて第i番目の
反射鏡及びレンズ面の曲率半径、Diは物点P1 から光
の進行順に数えて第i番目と第i+1番目のレンズ厚及
び空気間隔、SiO2 は石英ガラスである。空気間隔及
び屈折率は光の進行方向左方から右方に測ったときを
正、その逆を負として示している。Next, a numerical example of the embodiment shown in FIG. 1 will be shown. Ri represents a radius of curvature of the i-th reflector and lens surface counted in order of progress of the light from the object point P 1, Di is the i-th and the (i + 1) th lens thickness counting the order of progress of the light from the object point P 1 and Air space, SiO 2 is quartz glass. The air gap and the refractive index are shown as positive when measured from the left to the right in the light traveling direction and as negative when measured in the opposite direction.
【0025】数値実施例 NA=0.25 スリット幅 1.5mm 倍率
1/4Numerical Example NA = 0.25 Slit width 1.5mm Magnification
1/4
【0026】[0026]
【表1】 [Table 1]
【0027】[0027]
【発明の効果】本発明によれば、縮小結像光学系の屈折
光学部材を光透過率の良い単一の硝材により構成し、前
記屈折光学部材によりコマ収差を補正せしめることを特
徴としており、これにより縮小結像光学系の光学特性の
変化を小さくしつつ鮮明なパターン像を形成している。According to the present invention, the refraction optical member of the reduction imaging optical system is composed of a single glass material having a good light transmittance, and the refraction optical member is used to correct coma aberration. As a result, a clear pattern image is formed while reducing the change in the optical characteristics of the reduction imaging optical system.
【図1】 本発明の数値実施例の光学断面図FIG. 1 is an optical sectional view of a numerical example of the present invention.
【図2】 本発明の数値実施例の収差図FIG. 2 is an aberration diagram of numerical examples of the present invention.
A サジタル像面 B メリディオナル像面 Y0 物高 P1 第1物点 P2 第2物点 P1 ′ 第1像点 P2 ′ 第2像点A Sagittal image plane B Meridional image plane Y 0 Object height P 1 1st object point P 2 2nd object point P 1 ′ 1st image point P 2 ′ 2nd image point
Claims (10)
露光体上に縮小して結像せしめる工程を含む回路の製造
方法において、前記縮小結像光学系の屈折光学部材を光
透過率の良い単一の硝材により構成し、前記屈折光学部
材によりコマ収差を補正せしめることを特徴とする回路
の製造方法。1. A method of manufacturing a circuit including a step of reducing a circuit pattern onto an object to be exposed to form an image by a reduction imaging optical system, wherein a refractive optical member of the reduction imaging optical system has a high light transmittance. A method of manufacturing a circuit, comprising a single glass material, and correcting the coma aberration by the refractive optical member.
とを特徴とする請求項1の回路の製造方法。2. The method for manufacturing a circuit according to claim 1, wherein the reduction imaging optical system includes a concave mirror.
に制限することを特徴とする請求項1又は2の回路の製
造方法。3. The method of manufacturing a circuit according to claim 1, wherein the field of view of the reduction imaging optical system is limited to a slit shape.
とする請求項1,2又は3の回路の製造方法。4. The method of manufacturing a circuit according to claim 1, wherein the glass material comprises SiO 2 .
とする請求項1,2又は3の回路の製造方法。5. The method for manufacturing a circuit according to claim 1, wherein the glass material comprises CaF 2 .
被露光体上に縮小して結像せしめる露光装置において、
前記縮小結像光学系は光透過率の良い単一の硝材により
構成した屈折光学部材を備え、前記屈折光学部材により
コマ収差を補正することを特徴とする露光装置。6. An exposure apparatus for reducing and imaging a mask pattern on an object to be exposed by a reduction imaging optical system,
The exposure apparatus, wherein the reduction imaging optical system includes a refractive optical member made of a single glass material having a high light transmittance, and the coma aberration is corrected by the refractive optical member.
とを特徴とする請求項6の露光装置。7. The exposure apparatus according to claim 6, wherein the reduction imaging optical system includes a concave mirror.
に制限することを特徴とする請求項6又は7の露光装
置。8. The exposure apparatus according to claim 6, wherein the field of view of said reduction imaging optical system is limited to a slit shape.
とする請求項6,7又は8の露光装置。9. The exposure apparatus according to claim 6, wherein the glass material comprises SiO 2 .
徴とする請求項6,7又は8の露光装置。10. The exposure apparatus according to claim 6, wherein the glass material comprises CaF 2 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7000794A JPH07109820B2 (en) | 1994-03-14 | 1994-03-14 | Circuit manufacturing method and exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7000794A JPH07109820B2 (en) | 1994-03-14 | 1994-03-14 | Circuit manufacturing method and exposure apparatus |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59280573A Division JPS61156737A (en) | 1984-12-27 | 1984-12-27 | Catadioptric system |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0774090A true JPH0774090A (en) | 1995-03-17 |
JPH07109820B2 JPH07109820B2 (en) | 1995-11-22 |
Family
ID=13419124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7000794A Expired - Lifetime JPH07109820B2 (en) | 1994-03-14 | 1994-03-14 | Circuit manufacturing method and exposure apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07109820B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001011425A1 (en) * | 1999-08-04 | 2001-02-15 | Sanyo Electric Co., Ltd. | Rear surface projection type display device |
-
1994
- 1994-03-14 JP JP7000794A patent/JPH07109820B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001011425A1 (en) * | 1999-08-04 | 2001-02-15 | Sanyo Electric Co., Ltd. | Rear surface projection type display device |
US6752500B1 (en) | 1999-08-04 | 2004-06-22 | Sanyo Electric Co., Ltd | Rear surface projection type display device |
KR100726921B1 (en) * | 1999-08-04 | 2007-06-14 | 산요덴키가부시키가이샤 | Rear surface projection type display device |
Also Published As
Publication number | Publication date |
---|---|
JPH07109820B2 (en) | 1995-11-22 |
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