JPH08138539A - Manufacture of shadow mask - Google Patents

Manufacture of shadow mask

Info

Publication number
JPH08138539A
JPH08138539A JP27888094A JP27888094A JPH08138539A JP H08138539 A JPH08138539 A JP H08138539A JP 27888094 A JP27888094 A JP 27888094A JP 27888094 A JP27888094 A JP 27888094A JP H08138539 A JPH08138539 A JP H08138539A
Authority
JP
Japan
Prior art keywords
shadow mask
film
resist
mask material
hardening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27888094A
Other languages
Japanese (ja)
Inventor
Masahiro Kosaka
正宏 小佐古
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP27888094A priority Critical patent/JPH08138539A/en
Publication of JPH08138539A publication Critical patent/JPH08138539A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a shadow mask having a small diameter of aperture by measuring optical density of photosensitive resist after finishing of film hardening, and adjusting process conditions in the film hardening process based on the optical density. CONSTITUTION: A shadow mask material 1 is of low carbon steel having plate thickness of 0.13mm or low expandable invar material. Water soluble photosensitive liquid composed of polyvinyl alcohol and ammonium dichromate is used as a photosensitive resist 2 so as to provide the shadow mask material 1 having a fine hole resist film 2a and a large hole resist film 2b of each film thickness 10μm on the obverse and reverse sides. Next, chromic acid anhydride solution is used as a film hardening treatment liquid 8 in a film hardening treatment tank 7, and after a mask material is dipped in, buring is conducted via a far infrared radiation heater 9. Reflection density C of the mask material 1 is measured from the fine hole side by using an optical reflection density meter 10. A measured value C is compared with a reference value and in accordance with the result, concentration of the photosensitive liquid is adjusted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、カラー受像管に用いら
れるシャドウマスクの製造方法の工夫に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a shadow mask used for a color picture tube.

【0002】[0002]

【従来の技術】カラー受像管に用いられるシャドウマス
クをフォトエッチング法により製造する方法の従来例
を、図3を用い簡単に説明する。まず、シャドウマスク
の基板材料となる、例えばロール状の薄板金属材料を用
い、その金属の薄板をアルカリ脱脂液に接触することに
より、金属板(以下、シャドウマスク材と記す)の表面
に付着している油分や有機系のゴミ等を除去する脱脂処
理を行う。次いで、次工程の感光性レジストの塗布の際
に、シャドウマスク材の表面に感光性レジストを付き易
くするために、シャドウマスク材を酸処理液に接触する
ことにより、シャドウマスク材の表面の整面処理を行
う。
2. Description of the Related Art A conventional example of a method for manufacturing a shadow mask used for a color picture tube by a photoetching method will be briefly described with reference to FIG. First, for example, a roll-shaped thin plate metal material that becomes the substrate material of the shadow mask is used, and the thin metal plate is attached to the surface of the metal plate (hereinafter referred to as the shadow mask material) by contacting with an alkaline degreasing liquid. A degreasing process is performed to remove oil and organic debris that are present. Then, in the next step of applying the photosensitive resist, the surface of the shadow mask material is adjusted by contacting the shadow mask material with an acid treatment liquid so that the photosensitive resist is easily attached to the surface of the shadow mask material. Perform surface treatment.

【0003】次いで、シャドウマスク材1の両面に、例
えばネガ型感光性レジスト2を塗布する。次いで、図3
(a)に示すように、孔形パターン部が遮光部となった
大孔小孔二種類のパターンマスク6を用い、金属板の片
面に小孔パターンマスク6aを密着して当て、金属板の
他方の片面に大孔パターンマスク6bを対応する位置に
密着して当て、同時に両面に紫外線光を照射することに
よりパターン焼き付けを行い、孔形パターン部以外の領
域の感光性レジスト2の光硬化を行う。
Then, for example, a negative photosensitive resist 2 is applied to both surfaces of the shadow mask material 1. Then, FIG.
As shown in (a), using a pattern mask 6 of two kinds of large holes and small holes having a hole-shaped pattern portion as a light-shielding portion, the small hole pattern mask 6a is closely adhered to one surface of the metal plate, The large-hole pattern mask 6b is closely applied to the other side at the corresponding position, and the both sides are simultaneously irradiated with ultraviolet light to perform pattern printing, thereby photo-curing the photosensitive resist 2 in the area other than the hole-shaped pattern portion. To do.

【0004】次いで、例えば温水スプレーにて現像を行
い未露光未硬化の感光性レジスト2の除去を行い、図3
(b)を得る。次いで、残った感光性レジスト2aおよ
び2bの硬膜工程、例えば、硬膜処理液へシャドウマス
ク材を浸漬する等してシャドウマスク材に処理液を接触
した後、例えばバーニングを行うという処理を行う。
Next, the unexposed and uncured photosensitive resist 2 is removed by developing with, for example, a hot water spray, and then, as shown in FIG.
(B) is obtained. Then, a process of hardening the remaining photosensitive resists 2a and 2b, for example, a process of contacting the processing liquid with the shadow mask material by immersing the shadow mask material in the film processing liquid and then performing burning, for example, is performed. .

【0005】次いで、図3(c)に示すようにシャドウ
マスク材1両面に一次エッチングを行い、シャドウマス
ク材1両面に一定のエッチングを行う。次いで、図3
(d)に示すように小孔側にニスを塗布してエッチング
防止層4を形成する。次いで、図3(e)に示すように
大孔側に二次エッチングを行い、小孔と貫通させ凹孔5
を得る。次いで、図3(f)に示すようにアルカリ液を
用いエッチング防止層4および感光性レジスト2aおよ
び2bを剥膜後、シャドウマスク材1の不要部を取り除
きシャドウマスクとする。
Next, as shown in FIG. 3C, both surfaces of the shadow mask material 1 are subjected to primary etching, and both surfaces of the shadow mask material 1 are subjected to constant etching. Then, FIG.
As shown in (d), a varnish is applied to the small hole side to form the etching prevention layer 4. Next, as shown in FIG. 3 (e), secondary etching is performed on the large hole side to penetrate the small hole to form the concave hole 5
Get. Next, as shown in FIG. 3F, after removing the etching prevention layer 4 and the photosensitive resists 2a and 2b using an alkaline solution, unnecessary portions of the shadow mask material 1 are removed to form a shadow mask.

【0006】この従来法では、フォトエッチング法では
避けることのできないサイドエッチング現象を小孔側で
抑えている、ということができる。すなわち、小孔側の
凹部にエッチング防止層を充填し、第二エッチング工程
では小孔はサイドエッチングされないことにより、第一
エッチング工程における精確な小孔パターンを維持でき
る。したがって、例えば材料金属板の厚さより小さい孔
径の開孔も可能としていた。
In this conventional method, it can be said that the side etching phenomenon, which cannot be avoided by the photo etching method, is suppressed on the small hole side. That is, by filling the recesses on the small hole side with the etching prevention layer and not side-etching the small holes in the second etching step, the accurate small hole pattern in the first etching step can be maintained. Therefore, for example, it is possible to open a hole having a hole diameter smaller than the thickness of the material metal plate.

【0007】しかしながら、この従来法にも問題がない
わけではない。すなわち、硬膜工程において処理が不十
分であった場合、レジストの耐エッチング性およびレジ
ストのシャドウマスク材への密着性が悪くなり、次工程
のエッチング処理において、シャドウマスクの形状不良
が生じるという問題である。
However, this conventional method is not without problems. That is, if the treatment is insufficient in the film-hardening step, the etching resistance of the resist and the adhesion of the resist to the shadow mask material are deteriorated, and the shape of the shadow mask is defective in the etching treatment in the next step. Is.

【0008】つまり、硬膜処理後のレジストの耐エッチ
ング性が悪くなることで、エッチング工程中にエッチン
グ液がレジスト膜中に浸透しシャドウマスク材に接触す
ることで、シャドウマスク材に不要なエッチングが行わ
れパターン異常やピンホールが発生し、例えば、図2中
に示すような孔形の形状不良11を生じる場合がある。
また、硬膜処理後のレジストのシャドウマスク材への密
着性が悪くなることで、エッチング工程中にレジストが
シャドウマスク材から剥がれ、剥がれたレジストが他の
部位のシャドウマスク材に付着し、その部分のエッチン
グを阻害することで、例えば、図2中に示すようなパタ
ーン欠け12を生じる場合もある。
That is, since the etching resistance of the resist after the film hardening process is deteriorated, the etching solution permeates into the resist film and contacts the shadow mask material during the etching process, so that unnecessary etching is performed on the shadow mask material. May occur, resulting in a pattern abnormality or pinhole, resulting in, for example, a hole-shaped defective shape 11 as shown in FIG.
Further, the adhesion of the resist to the shadow mask material after the hardening treatment is deteriorated, so that the resist is peeled off from the shadow mask material during the etching step, and the peeled resist is attached to the shadow mask material on other parts, By inhibiting the etching of the portion, for example, the pattern chip 12 as shown in FIG. 2 may occur.

【0009】また、硬膜工程において処理が過度に行わ
れた場合、レジストが硬く、かつシャドウマスク材に強
く密着してしまうため、エッチング工程終了後にレジス
トの剥膜を行ってもシャドウマスク上にレジストが残
り、これによりシャドウマスクにサビを発生させる原因
となるという問題もある。
Further, if the treatment is excessively performed in the film-hardening process, the resist is hard and adheres strongly to the shadow mask material. Therefore, even if the resist is stripped after the etching process is completed, the resist remains on the shadow mask. There is also a problem that the resist remains, which causes rust on the shadow mask.

【0010】なお、現像工程後の硬膜工程において処理
が不十分になる例として、例えば、以下の場合がありう
る。すなわち、硬膜処理に用いる処理液の濃度が規定値
を外れている、または、処理液が疲労している等であ
る。また、バーニングにおいて、バーニング温度が規定
温度を外れている場合もあげられる。
The following cases may be examples of insufficient treatment in the film-hardening step after the developing step. That is, the concentration of the treatment liquid used for hardening treatment is out of the specified value, or the treatment liquid is fatigued. Further, in burning, a case where the burning temperature deviates from the specified temperature can also be mentioned.

【0011】通常は、シャドウマスクの製造開始時点お
よび定期的に、硬膜工程における処理液濃度およびバー
ニング温度等の処理条件の点検は行われている。しか
し、前述したようにシャドウマスクはロール状の金属材
料から連続して製造されているため、随時の点検が必要
であるが、手間、コスト等の面で実行は困難といえる。
Normally, the processing conditions such as the concentration of the processing solution and the burning temperature in the film hardening process are inspected at the start of the production of the shadow mask and periodically. However, since the shadow mask is continuously manufactured from a roll-shaped metal material as described above, it needs to be inspected at any time, but it can be said that it is difficult to carry out because of labor, cost, and the like.

【0012】[0012]

【発明が解決しようとする課題】本発明の目的は、カラ
ー受像管に用いられるシャドウマスクの製造方法に係わ
り、特に、上記したような問題点を有しないシャドウマ
スクの製造方法を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for manufacturing a shadow mask used in a color picture tube, and more particularly to provide a method for manufacturing a shadow mask which does not have the above-mentioned problems. is there.

【0013】[0013]

【課題を解決するための手段】すなわち、本発明は、両
面に感光性レジスト層を形成したシャドウマスク用金属
材に対し、表裏に所定のパターンを焼き付けるパターン
露光工程および、未露光部の感光性レジストの除去を行
う現像工程を有し、該現像工程後残った感光性レジスト
の硬膜工程を行い、しかるのちシャドウマスク材へのエ
ッチング工程等を行うフォトエッチング法を用いたカラ
ー受像管用シャドウマスクの製造方法において、硬膜工
程後の感光性レジストの光学濃度を測定し、該光学濃度
をもとに硬膜工程における処理条件の調整を行うことを
特徴とするシャドウマスクの製造方法を提供することに
より上記の課題を解決したものである。
That is, the present invention provides a pattern exposure step of baking a predetermined pattern on the front and back of a shadow mask metal material having a photosensitive resist layer formed on both sides, and a photosensitivity of an unexposed portion. A shadow mask for a color picture tube using a photo-etching method, which has a developing step for removing the resist, performs a film forming step for the photosensitive resist remaining after the developing step, and then performs an etching step for the shadow mask material, etc. In the method for manufacturing a shadow mask, the optical density of the photosensitive resist after the hardening step is measured, and the processing conditions in the hardening step are adjusted based on the optical density. This solves the above problems.

【0014】以下に図面を用い、本発明を詳述する。図
1は、シャドウマスクの製造において、本発明を実施し
た一例の要部を示したものである。
The present invention will be described in detail below with reference to the drawings. FIG. 1 shows a main part of an example in which the present invention is carried out in manufacturing a shadow mask.

【0015】図1において、シャドウマスク材1は、巻
取りロールから供給された長尺物の金属板であって、例
えば、板厚0.13mmの低炭素鋼や低膨張性のアンバー材を
用いる。すでに(従来の技術)の項で説明した工程に従
って現像工程まで行い、図3(b)に示すような、小孔
側レジスト2aと大孔側レジスト2bを表裏に有するシャド
ウマスク材1とする。
In FIG. 1, a shadow mask material 1 is a long metal plate supplied from a winding roll, and is made of, for example, low carbon steel having a plate thickness of 0.13 mm or low expansion amber material. The development process is performed according to the process already described in the section of (Prior Art) to obtain the shadow mask material 1 having the small hole side resist 2a and the large hole side resist 2b on the front and back sides as shown in FIG. 3B.

【0016】次いで、硬膜工程として、例えば、図1に
示すように硬膜処理槽7にシャドウマスク材1を通し硬
膜処理液8にシャドウマスク材を接触させたのち、例え
ば、遠赤外線ヒーター9に通すことでバーニングを行
う。
Then, in the film hardening step, for example, as shown in FIG. 1, after passing the shadow mask material 1 through the film hardening processing bath 7 and bringing the shadow mask material into contact with the film hardening processing liquid 8, for example, a far infrared heater. Burn by passing through 9.

【0017】ここで、本発明者らは、光硬化後の硬膜工
程における処理条件が適正であり、硬膜されたレジスト
が適正な硬さをもった場合、このレジストの光学濃度
は、膜厚が一定であればレジストの種類毎に常に一定の
範囲内になるという事実を経験的に得、これに着目し
た。
The inventors of the present invention have found that when the processing conditions in the film-hardening process after photocuring are proper and the hardened resist has proper hardness, the optical density of the resist is We empirically obtained the fact that if the thickness is constant, it will always be within a fixed range for each type of resist, and we paid attention to this.

【0018】そこで、本発明においては、図1に示すよ
うに硬膜工程の終了したシャドウマスク材1に対し、例
えば、光学反射濃度計10を用い、レジスト上からシャド
ウマスク材1に対し光学反射濃度を測定し、得られた測
定値により硬膜工程の処理条件の調整を行うことを特徴
としている。また、これ以後の工程は従来通りのエッチ
ング工程等の工程を行うことでシャドウマスクの製造を
行うものである。
Therefore, in the present invention, as shown in FIG. 1, for example, an optical reflection densitometer 10 is used for the shadow mask material 1 for which the hardening process has been completed, and the shadow mask material 1 is optically reflected from above the resist. It is characterized in that the concentration is measured, and the treatment conditions in the film hardening step are adjusted based on the obtained measured values. In the subsequent steps, the shadow mask is manufactured by performing the conventional etching step and the like.

【0019】なお、上記の光学反射濃度とは入射する光
の強度をI0 とし、物体から反射した光の強度をI1
したときに以下の(数1)で表すDをもって光学反射濃
度とした。
The above-mentioned optical reflection density is defined as the optical reflection density with D represented by the following (Equation 1) when the intensity of incident light is I 0 and the intensity of light reflected from an object is I 1. did.

【0020】[0020]

【数1】 [Equation 1]

【0021】また、シャドウマスク材における光学反射
濃度測定の箇所としては、孔形パターンが形成された場
所を避け、光硬化したレジスト膜が均一に広がるベタ部
で測定するのが望ましい。ちなみに、後述する実施例で
は、帯状のシャドウマスク材上に連続して形成されたシ
ャドウマスク間の中間において、光硬化したレジスト膜
が均一に広がるベタ部で測定を行った。また、測定する
面は、図1では小孔側レジスト2aの面で行っている
が、レジストの塗布膜厚がシャドウマスク材の両面で同
一の場合は、シャドウマスク材のどちらの面で行っても
よく、例えば、大孔側レジスト2bの面で行ってもかま
わない。但し、レジストの塗布膜厚が両面で異なる場合
は、以下に記した、基準となるレジスト膜厚と同一の塗
布膜厚となっているシャドウマスク材の面にて測定する
ことが望ましい。
It is desirable that the optical reflection density of the shadow mask material is measured at a solid portion where the photo-cured resist film spreads uniformly, avoiding the location where the hole pattern is formed. By the way, in Examples described later, the measurement was carried out at a solid portion where the photo-cured resist film spreads uniformly in the middle between the shadow masks continuously formed on the strip-shaped shadow mask material. Further, the surface to be measured is the surface of the small hole side resist 2a in FIG. 1, but if the coating film thickness of the resist is the same on both surfaces of the shadow mask material, it is measured on which surface of the shadow mask material. Alternatively, for example, the surface of the large hole side resist 2b may be used. However, when the coating thickness of the resist is different on both sides, it is desirable to measure on the surface of the shadow mask material described below, which has the same coating thickness as the reference resist thickness.

【0022】さらに、本発明について説明を行う。ま
ず、シャドウマスクの製造において塗布するのと同一の
種類かつ同一の膜厚であり、光硬化後の硬膜工程におい
て硬膜処理が適正に行われた場合のレジスト単体の光学
反射濃度を調べ、これをAとする。なお、このAの値は
前述したように、膜厚が同一であればレジストの種類毎
に常に一定の範囲内となるものである。なお、Aが一定
の範囲をもつ理由としては、感光性レジスト塗布時の許
容誤差内での塗布膜厚のバラツキ、および、硬膜工程後
のレジストの硬さの許容誤差等があげられる。次いで、
表面にレジスト2を未塗布のシャドウマスク材1単体の
表面の光学反射濃度を調べ、これをBとする。
Further, the present invention will be described. First, the optical reflection density of the resist alone in the case of the same type and the same film thickness as that applied in the production of the shadow mask, and the case where the film hardening process is appropriately performed in the film hardening step after photocuring, This is designated as A. As described above, the value of A is always within a fixed range for each type of resist if the film thickness is the same. The reason why A has a certain range is, for example, a variation in the coating film thickness within the tolerance when the photosensitive resist is coated, a tolerance of the hardness of the resist after the hardening step, and the like. Then
The optical reflection density of the surface of the shadow mask material 1 alone which is not coated with the resist 2 on the surface is examined, and this is designated as B.

【0023】次いで、通常のシャドウマスクの製造工程
に従い、レジストが塗布され硬膜工程まで終了したシャ
ドウマスク材1にたいしレジスト上から光学反射濃度を
測定し、得られた光学反射濃度測定値をCとする。次い
で、CからBを引くことにより硬膜工程後のレジストの
光学濃度Dを得る。
Then, in accordance with the usual shadow mask manufacturing process, the optical reflection density of the shadow mask material 1 which has been coated with the resist and completed the hardening process is measured from above the resist, and the obtained optical reflection density measurement value is obtained. Let be C. Then, by subtracting B from C, the optical density D of the resist after the hardening process is obtained.

【0024】次いで、Aを基準値とし、Dとの比較を行
うことで、該硬膜工程における処理の可否の判断を行
う。また、AとBを足した値Eを基準値とし、Cとの比
較を行う方法も上げられる。なお、上記の基準値は、上
述したようにAが一定の範囲をもつことから、多少の誤
差をともない、この誤差は感光性レジストの塗布膜厚の
許容誤差、および、硬膜後のレジストがもつ硬さの許容
誤差等の製造条件により適宜設定することが望ましいと
いえる。ちなみに、後述した実施例では、経験的に基準
値Eの誤差を±0.05としている。
Then, by using A as a reference value and comparing with D, it is judged whether or not the treatment in the hardening step is possible. Also, a method of comparing with C using the value E obtained by adding A and B as a reference value can be used. The above-mentioned reference value is accompanied by some error because A has a certain range as described above. This error depends on the tolerance of the coating thickness of the photosensitive resist and the resist after hardening. It can be said that it is desirable to appropriately set it in accordance with manufacturing conditions such as the allowable error of hardness. Incidentally, in the examples described later, the error of the reference value E is empirically set to ± 0.05.

【0025】次いで、本発明では、上記の値の比較よ
り、硬膜工程における処理条件の調整を行うものであ
る。
Next, in the present invention, the processing conditions in the film hardening step are adjusted by comparing the above values.

【0026】なお、硬膜工程における処理条件の調整と
して、以下の例があげられる。すなわち、硬膜工程後に
得られた測定値が基準値より低い場合は、レジストへの
硬膜処理が不十分と考えられ、硬膜処理を促進させるべ
く調整を行う。例えば、硬膜処理に薬液を用いる場合は
薬液の濃度を上げる、バーニングの温度を高くする、お
よび処理時間を長くする等の少なくとも一つを実施する
ことが考えられる。また逆に、測定値が基準値より高い
場合、レジストへの硬膜処理が過度に行われたと考えら
れ、硬膜処理を抑えるべく調整を行う。例えば、硬膜処
理に薬液を用いる場合は薬液の濃度を下げる、バーニン
グの温度を低くする、および処理時間を短くすること等
の少なくとも一つを実施することが考えられる。
The following examples can be given to adjust the processing conditions in the film hardening process. That is, when the measured value obtained after the film hardening step is lower than the reference value, it is considered that the resist film is insufficiently hardened, and adjustment is made to accelerate the film hardening process. For example, when a chemical solution is used for the dura mater treatment, at least one of increasing the concentration of the chemical solution, raising the burning temperature, and prolonging the treatment time can be considered. On the contrary, when the measured value is higher than the reference value, it is considered that the resist is hardened excessively, and adjustment is made to suppress the hardening treatment. For example, in the case of using a chemical solution for the dura treatment, at least one of reducing the concentration of the chemical solution, lowering the burning temperature, and shortening the treatment time can be considered.

【0027】なお、上述した説明は、エッチング防止層
を用いた高精細型のシャドウマスクをもとに行ったが、
エッチング防止層を用いない、例えば、スロット型シャ
ドウマスクにおいても感光性レジストの硬膜工程におい
て本発明が適応できることは言うまでもない。
Although the above description is based on a high-definition shadow mask using an etching prevention layer,
It goes without saying that the present invention can be applied to the step of hardening the photosensitive resist even in the case of using a slot type shadow mask without using the etching prevention layer.

【0028】[0028]

【作用】本発明を用いることで、シャドウマスクの製造
方法における硬膜工程終了後にシャドウマスク材の光学
濃度、例えば、光学反射濃度を測定することにより、レ
ジストへの硬膜処理が適正に行われたかの可否が判断で
きる。これにより、速やかに、硬膜処理条件の調整を行
うことが可能となる。このため、従来法で生じていた硬
膜処理不良によるシャドウマスクのエッチング形状不
良、剥膜後のレジスト残りによるサビの発生等が防止出
来る。
By using the present invention, the resist film is appropriately hardened by measuring the optical density of the shadow mask material, for example, the optical reflection density after the hardening process in the shadow mask manufacturing method. Whether or not it can be determined. As a result, it becomes possible to quickly adjust the dura treatment conditions. For this reason, it is possible to prevent a defective etching shape of the shadow mask due to a defective film processing, which has occurred in the conventional method, and a rust due to a resist residue after the film removal.

【0029】また、一旦基準値を決めておけば、シャド
ウマスクの連続した製造を行ったとしても、連続的に光
学濃度の測定を行うことにより随時、硬膜処理の調整条
件を得ることが可能となる。このため、例えば、従来の
ように頻繁に処理液の薬液濃度測定を行う必要が無くな
り、測定に要した手間およびコストの低減になる。
Further, once the reference value is determined, even if the shadow mask is continuously manufactured, it is possible to obtain the adjustment conditions for the hardening treatment at any time by continuously measuring the optical density. Becomes Therefore, for example, it becomes unnecessary to frequently measure the chemical concentration of the treatment liquid as in the conventional case, and the labor and cost required for the measurement can be reduced.

【0030】[0030]

【実施例】本発明の実施例を、以下に示す。 <実施例>厚さ0.13mmの鉄とニッケルを主成分とする合
金材(アンバー材)をシャドウマスク材1とし、感光性
レジスト2としてポリビニルアルコールおよび重クロム
酸アンモニウムからなる水溶性感光液を用いた。次い
で、前述した(従来の技術)の項で説明した工程に従い
現像工程まで行い、図3(b)に示すような、膜厚10μ
m の小孔レジスト膜2aと大孔レジスト膜2bを表裏に有す
るシャドウマスク材1を得た。
EXAMPLES Examples of the present invention are shown below. <Example> An alloy material (amber material) having a thickness of 0.13 mm and iron and nickel as main components is used as a shadow mask material 1, and a photosensitive resist 2 is made of a water-soluble photosensitive solution composed of polyvinyl alcohol and ammonium dichromate. I was there. Then, the development process is performed according to the process described in the above (Prior art), and a film thickness of 10 μm is obtained as shown in FIG.
A shadow mask material 1 having a small-hole resist film 2a of m 2 and a large-hole resist film 2b on the front and back sides was obtained.

【0031】次いで、図1に示すように、硬膜処理槽7
内の硬膜処理液8として濃度30g/lの無水クロム酸溶液
を用い、シャドウマスク材1を30秒間浸漬後、温度150
℃の雰囲気の遠赤外線ヒーター9に5分間通しバーニン
グを行った。次いで、硬膜工程終了後、本発明によりサ
カタエンジニアリング(株)製商品名「マクベス反射濃
度計」を用い、シャドウマスク材1表面の光学反射濃度
を小孔側から測定し、前述した(課題を解決するための
手段)の項で記した光学反射濃度測定値Cとして1.78を
得た。
Then, as shown in FIG.
A chromic anhydride solution having a concentration of 30 g / l was used as the hardening solution 8 in the above, and the shadow mask material 1 was immersed for 30 seconds and then the temperature was changed to 150
Burning was carried out by passing through the far-infrared heater 9 in an atmosphere of ° C for 5 minutes. Then, after completion of the film-hardening process, the optical reflection density of the surface of the shadow mask material 1 was measured from the small hole side using a "Macbeth reflection densitometer" manufactured by Sakata Engineering Co., Ltd. according to the present invention. 1.78 was obtained as the optical reflection density measurement value C described in the section of (Means for solving).

【0032】なお、シャドウマスクの製造に先立ち、感
光性レジスト塗布前における生のシャドウマスク材単体
の光学反射濃度および、上記のシャドウマスク材に使用
したのと同一の種類かつ同一の膜厚であり、光硬化後の
硬膜工程における硬膜処理が適正に行われた時のレジス
ト単体の光学反射濃度を、上記と同じくサカタエンジニ
アリング(株)製商品名「マクベス反射濃度計」を用い
測定した。これにより、各々光学反射濃度値1.08および
0.78を得たことで、前述した(課題を解決するための手
段)の項で記した基準値Eを1.86±0.05とした。
Prior to the production of the shadow mask, the optical reflection density of the raw shadow mask material alone before the application of the photosensitive resist and the same kind and the same film thickness as those used for the above shadow mask material were used. The optical reflection density of the resist alone when the hardening treatment was properly performed in the hardening step after photocuring was measured by using a product name "Macbeth reflection densitometer" manufactured by Sakata Engineering Co., Ltd. as described above. This gives an optical reflection density value of 1.08 and
Since 0.78 was obtained, the reference value E described in the above section (Means for solving the problem) was set to 1.86 ± 0.05.

【0033】次いで、得られた光学反射濃度の基準値と
測定値を比較し、測定値が低いため、硬膜処理を促進さ
せるべく、無水クロム酸溶液の濃度を濃度32g/l に調整
した。この硬膜処理液調整後の、光学反射濃度測定値C
は1.85となった。
Next, the obtained optical reflection density was compared with the reference value and the measured value was low. Therefore, the concentration of the chromic anhydride solution was adjusted to 32 g / l in order to accelerate the hardening treatment. Optical reflection density measurement value C after adjustment of this hardening solution
Became 1.85.

【0034】次いで、従来の工程に従い、エッチング工
程以後の工程を行いシャドウマスクを得た。なお、硬膜
処理液調整後に得られたシャドウマスクを調べたが、硬
膜処理不十分によるエッチング形状不良または、硬膜処
理過度によるレジスト残り等の不良は認められなかっ
た。
Then, according to the conventional process, the steps after the etching step were performed to obtain a shadow mask. In addition, when the shadow mask obtained after the preparation of the hardening solution was examined, no etching shape defect due to insufficient hardening process or a defect such as resist residue due to excessive hardening process was observed.

【0035】[0035]

【発明の効果】本発明を用いることで、フォトエッチン
グ法を用いたシャドウマスクの製造方法における硬膜工
程終了後にシャドウマスク材の光学濃度、例えば、光学
反射濃度を測定することにより、レジスト膜への硬膜処
理が適正に行われたかの可否が判断できる。これによ
り、速やかに、硬膜処理条件の調整を行うことで適正な
硬膜処理が可能となった。このため、従来法で生じてい
た硬膜不良によるシャドウマスクのエッチング形状不
良、剥膜後のレジスト残りによるサビの発生等が防止出
来る。
By using the present invention, the optical density of the shadow mask material, for example, the optical reflection density is measured after the completion of the hardening process in the shadow mask manufacturing method using the photoetching method. Whether or not the dura mater treatment was properly performed can be determined. As a result, it is possible to perform proper dura treatment by promptly adjusting the dura treatment conditions. For this reason, it is possible to prevent the etching shape defect of the shadow mask due to the defect of the hard film, which is caused by the conventional method, and the rust due to the resist residue after the film peeling.

【0036】また、一旦基準値を決めておけば、シャド
ウマスクの連続した製造を行ったとしても、例えば、コ
ンピュータ等を用いることで連続的に光学濃度の測定を
行うことにより、随時、硬膜処理の調整条件を得、か
つ、硬膜処理の調整を行うことが可能となる。このた
め、常に適正な硬さ、すなわち適正な光学反射濃度を持
つレジストを得ることが容易に行える等、本発明は実用
上優れているといえる。
Further, once the reference value is determined, even if the shadow mask is continuously manufactured, the optical density is continuously measured by using, for example, a computer or the like, so that the dura matter can be continuously obtained. It is possible to obtain the adjustment condition of the treatment and to adjust the dura treatment. Therefore, it can be said that the present invention is practically excellent in that it is easy to always obtain a resist having a proper hardness, that is, a proper optical reflection density.

【0037】[0037]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のシャドウマスクの製造方法の一実施例
の要部を示す説明図。
FIG. 1 is an explanatory view showing a main part of an embodiment of a method for manufacturing a shadow mask of the present invention.

【図2】硬膜処理不良によるシャドウマスクのエッチン
グ形状不良の一例を示す説明図。
FIG. 2 is an explanatory diagram showing an example of an etching shape defect of a shadow mask due to a defect of a film hardening process.

【図3】(a)〜(f)はシャドウマスクの製造方法の
一例を工程順に示す説明図。
3A to 3F are explanatory views showing an example of a method of manufacturing a shadow mask in the order of steps.

【符号の説明】[Explanation of symbols]

1 シャドウマスク材 2 レジスト 3 凹部 4 エッチング防止層 5 凹孔 6 マスク 7 硬膜処理槽 8 硬膜処理液 9 ヒーター 10 光学反射濃度計 11 形状不良 12 パターン欠け 1 Shadow Mask Material 2 Resist 3 Concave 4 Etching Prevention Layer 5 Recessed Hole 6 Mask 7 Hardening Treatment Tank 8 Hardening Treatment Liquid 9 Heater 10 Optical Reflection Densitometer 11 Defect 12 Pattern Missing

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】両面に感光性レジスト層を形成したシャド
ウマスク用金属材に対し、表裏に所定のパターンを焼き
付けるパターン露光工程および、未露光部の感光性レジ
ストの除去を行う現像工程を有し、該現像工程後残った
感光性レジストの硬膜工程を行い、しかるのちシャドウ
マスク材へのエッチング工程等を行うフォトエッチング
法を用いたカラー受像管用シャドウマスクの製造方法に
おいて、硬膜工程後の感光性レジストの光学濃度を測定
し、該光学濃度をもとに硬膜工程における処理条件の調
整を行うことを特徴とするシャドウマスクの製造方法。
1. A pattern exposure step of baking a predetermined pattern on the front and back of a shadow mask metal material having a photosensitive resist layer formed on both sides, and a developing step of removing the photosensitive resist in an unexposed area. In the method for producing a shadow mask for a color picture tube using a photo-etching method in which a film-hardening process of the photosensitive resist remaining after the developing process is performed, and then an etching process to the shadow mask material is performed, A method for producing a shadow mask, which comprises measuring an optical density of a photosensitive resist and adjusting processing conditions in a film hardening step based on the optical density.
【請求項2】該光学濃度が光学反射濃度である請求項1
記載のシャドウマスクの製造方法。
2. The optical density is an optical reflection density.
A method for manufacturing the shadow mask described.
JP27888094A 1994-11-14 1994-11-14 Manufacture of shadow mask Pending JPH08138539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27888094A JPH08138539A (en) 1994-11-14 1994-11-14 Manufacture of shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27888094A JPH08138539A (en) 1994-11-14 1994-11-14 Manufacture of shadow mask

Publications (1)

Publication Number Publication Date
JPH08138539A true JPH08138539A (en) 1996-05-31

Family

ID=17603406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27888094A Pending JPH08138539A (en) 1994-11-14 1994-11-14 Manufacture of shadow mask

Country Status (1)

Country Link
JP (1) JPH08138539A (en)

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